GB1156204A - Improvements in and relating to Semiconductor Devices - Google Patents
Improvements in and relating to Semiconductor DevicesInfo
- Publication number
- GB1156204A GB1156204A GB28665/65A GB2866565A GB1156204A GB 1156204 A GB1156204 A GB 1156204A GB 28665/65 A GB28665/65 A GB 28665/65A GB 2866565 A GB2866565 A GB 2866565A GB 1156204 A GB1156204 A GB 1156204A
- Authority
- GB
- United Kingdom
- Prior art keywords
- elements
- cement
- layer
- gaps
- adjacent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
1,156,204. Thermoelectric devices. G. V. PLANER Ltd. 5 Oct., 1966 [6 July, 1965], No. 28665/65. Heading H1K. The ends of a plurality of pairs of adjacent but separated semi-conductor elements of an element stack for a thermoelectric generator or refrigerator device, are connected electrically by bridging each of the gaps between the ends of the elements to be connected with an electrically conductive cement while leaving the other gaps between adjacent elements untreated and then electrolytically depositing separate layers of electrically conductive material across the ends of said pairs over the cement bridges. Semiconductor elements 10 separated by insulating material 12 are conductively joined by cement 13 consisting of a slurry or paste of a ceramic or glass binder containing a dispersion of graphite, Ni, Fe, Pt, Pd, Mo, W, SiC or reduced TiO 2 . An electroplated layer 15 of Ni, Fe, Pt, Pd or Rh is applied and then a layer 16 of Cu. In an alternative embodiment (Fig. 2, not shown), a thick conductive layer (14) is applied in place of layers 15 and 16. In another embodiment (Fig. 4, not shown) cups of Fe or Ni are embedded in the ends of the elements. The elements may be of PbTe, PbSnTe 2 , GeTe, AgSbTe 2 or mixtures thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB28665/65A GB1156204A (en) | 1965-07-06 | 1965-07-06 | Improvements in and relating to Semiconductor Devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB28665/65A GB1156204A (en) | 1965-07-06 | 1965-07-06 | Improvements in and relating to Semiconductor Devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1156204A true GB1156204A (en) | 1969-06-25 |
Family
ID=10279201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB28665/65A Expired GB1156204A (en) | 1965-07-06 | 1965-07-06 | Improvements in and relating to Semiconductor Devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1156204A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007118532A2 (en) * | 2006-04-13 | 2007-10-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermoelectric component and method for production thereof |
CN104329855A (en) * | 2014-08-29 | 2015-02-04 | 青岛海尔股份有限公司 | Semiconductor refrigeration refrigerator and manufacturing method thereof |
-
1965
- 1965-07-06 GB GB28665/65A patent/GB1156204A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007118532A2 (en) * | 2006-04-13 | 2007-10-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermoelectric component and method for production thereof |
WO2007118532A3 (en) * | 2006-04-13 | 2008-04-17 | Fraunhofer Ges Forschung | Thermoelectric component and method for production thereof |
CN104329855A (en) * | 2014-08-29 | 2015-02-04 | 青岛海尔股份有限公司 | Semiconductor refrigeration refrigerator and manufacturing method thereof |
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