CN104297571A - Wafer bearing table and Kelvin four-wire test conducting method thereof - Google Patents
Wafer bearing table and Kelvin four-wire test conducting method thereof Download PDFInfo
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- CN104297571A CN104297571A CN201410503297.3A CN201410503297A CN104297571A CN 104297571 A CN104297571 A CN 104297571A CN 201410503297 A CN201410503297 A CN 201410503297A CN 104297571 A CN104297571 A CN 104297571A
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- main body
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Abstract
The invention discloses a wafer bearing table which comprises a body (1). The wafer bearing table is characterized in that the body (1) is provided with an installation channel (2) for installation of a conductor, an outlet of the installation channel is located in a work tabletop of the body (1), and an inlet of the installation channel (2) is located in the side face or the bottom face of the body (1). The wafer bearing table is simple in structure, low in cost, capable of conducting a Kelvin four-wire test so as to greatly improve the accuracy of a grain test resistance value, capable of improving the accuracy of follow-up grain test parameters, and suitable for being used and popularized.
Description
Technical field
The present invention relates to a kind of physical construction for test wafer, particularly relate to a kind of wafer carrying platform and realize Kelvin four line test method.
Background technology
After wafer manufacture completes, just need to enter the wafer sort stage, wafer sort utilizes tester table (Tester), the pin matched combined surveyed between machine (Prober) and probe (Probe Card) carrys out each crystal grain (Die) on test wafer (Wafer), the p-wire of test machine is connected to tiny of on the probe of hair, and probe directly contacts with the weld pad (Pad) on crystal grain again.The bottom of the wafer (Wafer) of discrete device class is the weld pad (Pad) that each crystal grain shares, whole wafer is lie on wafer carrying platform to be connected with it when testing, and wafer carrying platform connects two p-wires and introduces test machine.Because there is contact resistance between wafer and plummer, and contact resistance is generally several milliohm to tens milliohms, when the resistance of crystal grain of testing is less than a milliohm, its error will reach several times of crystal grain resistance to tens times, and the resistance value therefore measured accurately can not reflect the true resistive value of crystal grain.
Summary of the invention
An object of the present invention is for above-mentioned deficiency, provides a kind of wafer carrying platform, and will produce contact resistance during resistance to prior art test volume crystal grain to be solved, the resistance value of therefore testing crystal grain accurately can not reflect the problem of the true resistive value of crystal grain.Meanwhile, the present invention also provides a kind of wafer carrying platform to realize the method for Kelvin four line test.
The object of invention is achieved through the following technical solutions:
Wafer carrying platform, comprises main body, and described main body is provided with installs the installation passage of conductor, and the outlet of described installation passage is positioned on the work top of main body, on the side that the entrance of described installation passage is positioned at main body or on bottom surface.
According to one embodiment of present invention, the cross section of described installation passage is circular, oval or rectangle.
According to one embodiment of present invention, the outlet of described installation passage is set to mounting groove.
According to one embodiment of present invention, described mounting groove is linear or arc, or described mounting groove is circle, ellipse, rectangle, triangle or polygon.
According to one embodiment of present invention, the cross section of described mounting groove is arc, rectangle, triangle or trapezoidal.
Wafer carrying platform realizes the method for Kelvin four line test, comprises the following steps:
(1) conductor is installed
Conductor is arranged in the installation passage of main body, between the conductor installed in passage and installation channel side wall, is provided with insulation course;
(2) by Kelvin four line test philosophy test wafer
Wafer is placed on the work top of main body, wafer contacts with the work top of main body, be positioned at and the conductor of channel outlet and wafer contacts are installed, be positioned at the conductor installing feeder connection end and encourage with on the p-wire of test machine group line F to hold respectively with main body and detection line S holds and connects one to one; The probe of another group excitation line F end on the p-wire of test machine is connected with the weld pad of a crystal grain on wafer respectively with the probe that detection line S holds; The test of Kelvin four line can be realized.
According to one embodiment of present invention, in step (1), the set-up mode of insulation course is apply insulating material on the sidewall installing passage, and insulating material can form insulation course in installation passage.
According to one embodiment of present invention, in step (1), the set-up mode of insulation course is that insulating material is at installation passage and installing between passage and can form insulation course at fill insulant between the conductor installed in passage and installation passage.
According to one embodiment of present invention, in step (1), the set-up mode of insulation course is be positioned at coated insulation cover on the conductor installing channel interior, and described insulation sleeve is insulation course.
Further technical scheme is, wafer carrying platform of the present invention comprises main body, and described main body is for placing wafer, and main body is made up of the metal material conducting electricity, and in order to reduce the conductive resistance of main body, generally needs body surfaces gold-plated.Main body is generally set to cylindrical, and main body also can be set to other shapes matched with wafer.Described main body is provided with installation passage, and the outlet of this installation passage is arranged on the work top of main body, on the side that the entrance of this installation passage is arranged on main body or on bottom surface.The cross section of described installation passage can be circular, ellipse, rectangle or other similar shapes, and the outlet of this installation passage can be cross section and the hole of installing channel cross-section same shape, and the outlet of this installation passage can also mounting groove.Mounting groove can be set to multiple, the shape of mounting groove can circle, ellipse, rectangle, triangle or other polygons, the cross section of mounting groove can be set to arc, rectangle, triangle, trapezoidal or other similar shapes.
Described installation passage is for installing conductor, before using testing board wafer of the present invention, need conductor to be arranged in the installation passage of main body, during test, conductor and main body need to form two conductive channels respectively, therefore can not conduct electricity between conductor and main body, need to arrange insulation course between conductor and installation passage.The set-up mode of described insulation course can be apply insulating material on the sidewall installing passage, and insulating material can form insulation course in installation passage; The set-up mode of described insulation course also can be that insulating material is at installation passage and installing between passage and can form insulation course at fill insulant between the conductor installed in passage and installation passage; The set-up mode of described insulation course can also be positioned at coated insulation cover on the conductor installing channel interior, and described insulation sleeve is insulation course.
Wafer carrying platform of the present invention is by Kelvin four line test philosophy test wafer, Kelvin four line test philosophy is mainly used in test resistance and is less than several ohm of measured resistance, when the resistance of test lead can not be ignored with the contact resistance of test point with probe compared with measured resistance, concrete measuring technology is as follows:
The test of Kelvin four line has two requirements: have one to encourage a line F and detection line S for each test point, the two strictly separates, and forms independent loop separately; Require that detection line S must receive on a test loop having high input impedance simultaneously, make the electric current flowing through detection line S minimum, be approximately zero.In Fig. 1, r1 represents the resistance of excitation line HF and the contact resistance sum of test point, and r2 represents the resistance of excitation line LF and the contact resistance sum of test point; R3 represents the resistance of detection line HS and the contact resistance sum of test point, and r4 represents the resistance of detection line LS and the contact resistance sum of test point.Because the electric current flowing through detection line S loop is zero, the pressure drop on r3, r4 is also zero, and exciting current I is at r1, pressure drop on r2 does not affect the pressure drop of I in measured resistance, so voltage table accurately can measure the magnitude of voltage at rt two ends, thus accurately measures the resistance of rt.Test result and r1, r2, r3 and r4 have nothing to do, and efficiently reduce measuring error.According to effect and the height of current potential, these four lines are called as noble potential respectively and apply line (HF), electronegative potential applying line (LF), noble potential detection line (HS) and electronegative potential detection line (LS).
The detailed process of wafer carrying platform test wafer of the present invention is be placed on the work top of main body by wafer, wafer contacts with the work top of main body, be positioned at and the conductor of channel outlet and wafer contacts are installed, be positioned at the conductor installing feeder connection end and encourage with on the p-wire of test machine group line F to hold respectively with main body and detection line S holds and connects one to one; Another group excitation line F end on the p-wire of test machine is held with detection line S and is connected with the weld pad of a crystal grain on wafer respectively by probe.Wherein, bottom is a test point, and the main body contacted with bottom and conductor are respectively of this test point and encourage a line F and detection line S; Owing to being provided with insulation course between the conductor installed in passage and installation channel side wall, namely have insulation course between main body and conductor, main body is strictly separated with conductor.The weld pad of crystal grain is another test point, this test point is organized by another on the p-wire on two probes and test machine strictly separated and is encouraged line F to hold to hold connect one to one with detection line S, and described probe is with p-wire S or encourages line F to be welded as a whole structure.Be connected with excitation line F for main body in the technical program, conductor is connected with detection line S-phase and is described, weld pad, probe and the detection line S be connected on probe on the detection line S on the p-wire of described test machine, the conductor be connected on this detection line S, crystal grain, crystal grain form an independently loop jointly; Weld pad, probe and the excitation line F be connected on probe on excitation line F on the p-wire of described test machine, the main body be connected on this excitation line F, crystal grain, crystal grain form another independently loop jointly.
Contrast Kelvin four line measuring technology, described crystal grain is the rt in Fig. 1, the probe of described contact on crystal grain, be connected to the excitation line F on probe and the contact resistance sum between probe and crystal grain and be equal to r1 in Fig. 1, the main body of described contact on crystal grain, be connected to the excitation line F in main body and the contact resistance between crystal grain and main body, contact resistance sum between main body and excitation line F is equal to r2, the probe of described contact on crystal grain, be connected to the detection line S on probe and the contact resistance sum between probe and crystal grain and be equal to r3 in Fig. 1, the conductor of described contact on crystal grain, be connected to the detection line S on conductor and the contact resistance between crystal grain and conductor, contact resistance sum between conductor and detection line S is equal to r4, the test of Kelvin four line can be realized.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
Wafer carrying platform of the present invention not only structure is simple, and with low cost, also can realize the test of Kelvin four line, thus drastically increases the accuracy of crystal grain test resistance, therefore can improve the accuracy of crystal grain follow-up test parameter.
Accompanying drawing explanation
Fig. 1 is Kelvin four wire testing method schematic diagram.
Fig. 2 is inner structure schematic diagram of the present invention.
Fig. 3 is the inner structure schematic diagram of another embodiment of the invention.
Fig. 4 is vertical view of the present invention.
Fig. 5 is the vertical view of another embodiment of the invention.
Fig. 6 is the inner structure schematic diagram of another embodiment of the invention.
Wherein, the name corresponding to the Reference numeral in accompanying drawing is called:
1-main body, 2-installs passage, 3-hole, 4-mounting groove.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail:
Embodiment 1
As shown in Figure 2, wafer carrying platform of the present invention, comprises main body 1, and described main body 1 is overall cylindrical, and this main body 1 is made up of the metal material conducting electricity.In order to reduce the conductive resistance of main body 1, gold-plated at the outside surface of described main body 1.Described main body 1 is provided with installs the installation passage 2 of conductor, and the outlet of described installation passage 2 is arranged on the work top of main body 1, i.e., on the upper surface of main body 1, the entrance of described installation passage 2 is arranged on the side of main body 1.Another embodiment of the invention, can also be arranged on the bottom surface of main body 1 by the entrance installing passage 2, as shown in Figure 3.The cross section of described installation passage 2 can be circular, ellipse, rectangle or other similar shapes, and the outlet of the installation passage 2 in the present embodiment is holes 3 of cross section and the cross section same shape of installing passage 2.The outlet of described installation passage 2 can be set to one, also can be set to several, and as shown in Figure 4, the cross section of the installation passage 2 in the present embodiment is circular.
Wafer carrying platform of the present invention realizes the method for Kelvin four line test, first need conductor to be arranged in the installation passage 2 of main body 1, insulation course is provided with between conductor and the sidewall installing passage 2, by the separable conductor of insulation course and main body 1, conductor and main body 1 is made to form two separate conductive channels.The set-up mode of described insulation course can be apply insulating material on the sidewall installing passage 2, and insulating material can form insulation course in installation passage 2; The set-up mode of described insulation course also can be that insulating material is at installation passage 2 and installing between passage 2 and can form insulation course at fill insulant between the conductor installed in passage 2 and installation passage 2; The set-up mode of described insulation course can also be positioned at coated insulation cover on the conductor installing passage 2 inside, and described insulation sleeve is insulation course.
During test, wafer is placed on the work top of main body 1, wafer contacts with the work top of main body 1, be positioned at conductor and wafer contacts that passage 2 endpiece is installed, be positioned at the conductor installing passage 2 inlet end and encourage with on the p-wire of test machine group line F to hold respectively with main body 1 and detection line S holds and connects one to one; The probe of another group excitation line F end on the p-wire of test machine is connected with the weld pad of a crystal grain on wafer respectively with the probe that detection line S holds, the test of Kelvin four line can be realized.
Embodiment 2
As shown in Figure 5,6, the present embodiment is compared with embodiment 1, and difference is that the set-up mode of the outlet of described installation passage 2 is not identical with embodiment 1, and the outlet of the installation passage 2 in the present embodiment is set to mounting groove 4.Described mounting groove 4 can be set to linear or arc, or this mounting groove 4 can also be set to circle, ellipse, rectangle, triangle or polygon.Mounting groove 4 in the present embodiment is set to circle, and described mounting groove 4 can be set to one or more.The cross section of described mounting groove 4 can be set to arc, rectangle, triangle or trapezoidal.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. wafer carrying platform, comprise main body (1), it is characterized in that described main body (1) is provided with the installation passage (2) installing conductor, the outlet of described installation passage is positioned on the work top of main body (1), on the side that the entrance of described installation passage (2) is positioned at main body (1) or on bottom surface.
2. wafer carrying platform according to claim 1, is characterized in that the cross section of described installation passage (2) is for circular, oval or rectangle.
3. wafer carrying platform according to claim 1 and 2, is characterized in that the outlet of described installation passage (2) is set to mounting groove (4).
4. wafer carrying platform according to claim 3, it is characterized in that described mounting groove (4) is for linear or arc, or described mounting groove (4) is circle, ellipse, rectangle, triangle or polygon.
5. wafer carrying platform according to claim 4, is characterized in that the cross section of described mounting groove (4) is arc, rectangle, triangle or trapezoidal.
6. wafer carrying platform realizes the method for Kelvin four line test, it is characterized in that comprising the following steps:
(1) conductor is installed
Conductor is arranged in the installation passage of main body, between the conductor installed in passage and installation channel side wall, is provided with insulation course;
(2) by Kelvin four line test philosophy test wafer
Wafer is placed on the work top of main body, wafer contacts with the work top of main body, be positioned at and the conductor of channel outlet and wafer contacts are installed, be positioned at the conductor installing feeder connection end and encourage with on the p-wire of test machine group line F to hold respectively with main body and detection line S holds and connects one to one; The probe of another group excitation line F end on the p-wire of test machine is connected with the weld pad of a crystal grain on wafer respectively with the probe that detection line S holds; The test of Kelvin four line can be realized.
7. wafer carrying platform according to claim 6 realizes the method for Kelvin four line test, it is characterized in that the set-up mode of insulation course in step (1) is apply insulating material on the sidewall installing passage, insulating material can form insulation course in installation passage.
8. wafer carrying platform according to claim 6 realizes the method for Kelvin four line test, it is characterized in that the set-up mode of insulation course in step (1) is that insulating material is at installation passage and installing between passage and can form insulation course at fill insulant between the conductor installed in passage and installation passage.
9. wafer carrying platform according to claim 6 realizes the method for Kelvin four line test, it is characterized in that the set-up mode of insulation course in step (1) is be positioned at coated insulation cover on the conductor installing channel interior, described insulation sleeve is insulation course.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410503297.3A CN104297571A (en) | 2014-09-28 | 2014-09-28 | Wafer bearing table and Kelvin four-wire test conducting method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410503297.3A CN104297571A (en) | 2014-09-28 | 2014-09-28 | Wafer bearing table and Kelvin four-wire test conducting method thereof |
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| Publication Number | Publication Date |
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| CN104297571A true CN104297571A (en) | 2015-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410503297.3A Pending CN104297571A (en) | 2014-09-28 | 2014-09-28 | Wafer bearing table and Kelvin four-wire test conducting method thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5204615A (en) * | 1991-10-24 | 1993-04-20 | Interconnect Devices, Inc. | Module attachment for printed circuit board test fixtures |
| US6420888B1 (en) * | 2000-09-29 | 2002-07-16 | Schlumberger Technologies, Inc. | Test system and associated interface module |
| CN201926676U (en) * | 2011-01-10 | 2011-08-10 | 彭玉元 | Wafer testing card |
| CN102565468A (en) * | 2011-12-26 | 2012-07-11 | 天津中环半导体股份有限公司 | Kelvin test slide stage |
| CN202421228U (en) * | 2011-12-26 | 2012-09-05 | 天津中环半导体股份有限公司 | Kelvin test slide holder |
| CN102707219A (en) * | 2012-06-21 | 2012-10-03 | 上海华岭集成电路技术股份有限公司 | Testing device for semiconductor device test |
| CN204705677U (en) * | 2014-09-28 | 2015-10-14 | 周峰 | Wafer carrying platform |
-
2014
- 2014-09-28 CN CN201410503297.3A patent/CN104297571A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5204615A (en) * | 1991-10-24 | 1993-04-20 | Interconnect Devices, Inc. | Module attachment for printed circuit board test fixtures |
| US6420888B1 (en) * | 2000-09-29 | 2002-07-16 | Schlumberger Technologies, Inc. | Test system and associated interface module |
| CN201926676U (en) * | 2011-01-10 | 2011-08-10 | 彭玉元 | Wafer testing card |
| CN102565468A (en) * | 2011-12-26 | 2012-07-11 | 天津中环半导体股份有限公司 | Kelvin test slide stage |
| CN202421228U (en) * | 2011-12-26 | 2012-09-05 | 天津中环半导体股份有限公司 | Kelvin test slide holder |
| CN102707219A (en) * | 2012-06-21 | 2012-10-03 | 上海华岭集成电路技术股份有限公司 | Testing device for semiconductor device test |
| CN204705677U (en) * | 2014-09-28 | 2015-10-14 | 周峰 | Wafer carrying platform |
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| PB01 | Publication | ||
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| C10 | Entry into substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150121 |
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| WD01 | Invention patent application deemed withdrawn after publication |