CN104272434A - Laser annealing device and laser annealing method - Google Patents

Laser annealing device and laser annealing method Download PDF

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Publication number
CN104272434A
CN104272434A CN201380017446.9A CN201380017446A CN104272434A CN 104272434 A CN104272434 A CN 104272434A CN 201380017446 A CN201380017446 A CN 201380017446A CN 104272434 A CN104272434 A CN 104272434A
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laser
pulse
wavelength
amorphous silicon
silicon film
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CN104272434B (en
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水村通伸
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V Technology Co Ltd
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Abstract

The present invention is a laser annealing device which anneals an amorphous silicon film (5) by irradiating the amorphous silicon film (5) with laser light. The laser annealing device comprises: a first pulse laser (6) for generating first laser light (L1) with a prescribed pulse width and a prescribed wavelength; a second pulse laser (7) for generating second laser light (L2) with a pulse width and a wavelength that are longer than those of said first laser light (L1); a synthesizing means (8) for synthesizing said first laser light (L1) and said second laser light (L2) into light having the same optical axis; and a control means (3) for controlling the timing for the emission of the first and second laser light (L1, L2) by operating said first and second pulse lasers (6, 7). The control means (3) controls said first pulse laser (6) such that said first laser light (L1) is emitted at a prescribed timing within the pulse width of said second laser light (L2).

Description

Laser anneal device and laser anneal method
Technical field
The present invention relates to and laser is irradiated with the laser anneal device carrying out annealing in process to amorphous silicon film, especially relate to the utilization ratio that improves laser energy and laser anneal device and the laser anneal method of annealing in process can be carried out efficiently.
Background technology
Existing laser anneal device, the multiple films that the are annealed laser of intermittently movement being formed at the first type surface of substrate to island irradiate respectively, the mode becoming the film with desired characteristic with the plurality of annealed film is annealed, by by the laser of point-like to being annealed film reirradiation repeatedly, and anneal (such as, referenced patent document 1) to being annealed film.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 9-45632 publication
Invent problem to be solved
But, in above-mentioned existing annealing device, because the laser irradiated is the ultraviolet laser of single wavelength, therefore, exist when the irradiation by laser makes that such as amorphous silicon film dissolves, the problem that the absorptivity of ultraviolet laser reduces.Therefore, can not fully dissolve to amorphous silicon film deep, often multi-crystal silicification is insufficient.
In addition, when annealing in process being carried out simultaneously to the multiple positions being annealed film when multiple laser of point-like will be generated from the laser produced by a light supply apparatus, because the irradiation energy of laser reduces, so the large-scale light supply apparatus needing laser energy larger, the problem that the manufacturing cost that there is annealing device increases.
For these problems, although also consider and to be annealed to being annealed film by multiple transmittings (shot) of laser, there is annealing in process efficiency and reduce, the problem that production cycle of annealing in process operation is elongated.
Summary of the invention
Therefore, for the problems referred to above point, the object of the invention is to, provide a kind of utilization ratio improving laser energy also can carry out laser anneal device and the laser anneal method of annealing in process efficiently.
For achieving the above object, the invention provides a kind of laser anneal device, to amorphous silicon film irradiating laser to carry out annealing in process, wherein, possess: the first pulse laser, it produces first laser with the constant wavelength of constant pulse duration; Second pulse laser, it produces the second laser that described in pulse duration and wavelength ratio, the first laser is longer; Synthesizer, described first laser and described second Laser synthesizing are same optical axis by it; Control device, it is to first and second pulse laser effect described thus control the generation time of first and second laser described, described control device controls described first pulse laser, produces to make the scheduled time of described first laser in the pulse duration of described second laser.
Pass through said structure, the first pulse laser is controlled by control device, produce first laser with the constant wavelength of constant pulse duration, and control the second pulse laser, produce pulse duration and longer the second laser of this first laser of wavelength ratio, by synthesizer, be same optical axis by the first laser and the second Laser synthesizing, and irradiate first and second laser to carry out annealing in process to amorphous silicon film.Now, the first pulse laser is controlled by control device in the mode that the scheduled time of the first laser in the pulse duration of the second laser produces.
Preferably, described control device controls described first pulse laser thus can adjust the generation time of described first laser in the pulse duration of described second laser.
More preferably, described first pulse laser produces described first laser of wavelength 355nm or 532nm, and described second pulse laser produces described second laser of wavelength 1064nm.
In addition, the invention provides a kind of laser anneal method, be same optical axis by having the second Laser synthesizing that described in the first laser of the constant wavelength of constant pulse duration and pulse duration and wavelength ratio, the first laser is longer and irradiate to amorphous silicon film, to carry out annealing in process, wherein, following step is carried out: produce described second laser and the step of it being irradiated to described amorphous silicon film; Predetermined time in the pulse duration of described second laser produces described first laser and the step of it being irradiated to this amorphous silicon film.
Preferably the wavelength of described first laser is 355nm ~ 532nm, and the wavelength of described second laser is 1064nm.
Invention effect
According to the present invention, even if the irradiation due to the first laser makes amorphous silicon film dissolve and makes the absorptivity of this first laser reduce, also can absorbing wavelength second laser longer than this first laser and carry out dissolving of amorphous silicon film, thus amorphous silicon film can be carried out annealing in process to deep.Therefore, compare the situation of the ultraviolet laser only using prior art, the utilization ratio of laser energy can be improved, and annealing in process can be carried out efficiently.
Accompanying drawing explanation
Fig. 1 is the front elevation of the execution mode representing laser anneal device of the present invention.
Fig. 2 is the plane graph representing the second pulse laser configuration example used in above-mentioned execution mode.
Fig. 3 represents in above-mentioned second pulse laser, control the applying voltage of the Pockers cell of Q switching and generate the key diagram of the second laser of long pulse, a () is the chart representing common control, (b) represents to make applying voltage chart decrescence.
Fig. 4 represents in above-mentioned Fig. 3 (b), controls to apply voltage to make the chart executing the laser pulse generated when alive decrescence gradient produces a point of inflexion.
Fig. 5 is the plane graph of the configuration example representing the laser attenuator used in above-mentioned second pulse laser.
Fig. 6 is the key diagram that in the laser of 1 pulse representing above-mentioned laser attenuator, selectivity reduces the state of the energy of special time, and (a) represents that the state before reducing, (b) represent the state after reducing.
Fig. 7 is the key diagram of an example of the impulse waveform representing first and second laser used in above-mentioned execution mode, and (a) represents the first laser, and (b) represents the second laser.
Fig. 8 represents the chart of the wavelength of various inorganic material to the relation of the absorption coefficient of light.
Fig. 9 represents in laser anneal method of the present invention, for carrying out the key diagram of the laser energy of annealing in process and useful effect, a () represents that the stipulated time in the pulse duration of the second laser produces the situation of the first laser, (b) represents the situation simultaneously producing first and second laser.
Description of symbols
3: control device
5: amorphous silicon film
6: the first pulse lasers
7: the second pulse lasers
8: synthesizer
L 1: the first laser
L 2: the second laser
Embodiment
Below, embodiments of the present invention are described in detail based on accompanying drawing.Fig. 1 is the front elevation of the execution mode representing laser anneal device of the present invention.This laser anneal device carries out annealing in process to amorphous silicon film irradiating laser, possesses: light supply apparatus 1, lighting device 2 and control device 3.
Above-mentioned light supply apparatus 1 generates the laser being used for the amorphous silicon film 5 of film forming on substrate 4 being carried out to annealing in process, comprises: the first pulse laser 6, second pulse laser 7 and synthesizer 8 and form.
At this, above-mentioned first pulse laser 6 produces such as pulse duration W 1for 20nsec, wavelength X 1for the first laser L of 355nm or 532nm 1, be the known YAG laser such as using nonlinear optical crystal to carry out wavelength conversion from the basic wave of wavelength 1064nm and generate.In addition, in the following description, with the first laser L 1for λ 1the situation of the laser of=355nm is described.In addition, the first pulse laser 6 is not limited to YAG laser, as long as produce the laser of short wavelength, then also can be such as excimer laser etc., is described in this situation to YAG laser.
Above-mentioned second pulse laser 7 produces pulse duration and wavelength ratio first laser L 1the second longer laser L 2, be generate such as pulse duration W 2for 350nsec, wavelength X 2for the YAG laser of the laser of 1064nm.In addition, the second pulse laser 7 is not limited to YAG laser, as long as produce the laser of long wavelength, then also can be such as CO 2laser etc., are described in this situation to YAG laser.
More specifically, as shown in Figure 2, the second pulse laser 7 possesses: resonator 9, image intensifer 10 and laser attenuator 11, and they are from the second laser L 2direct of travel upstream configure in order towards downstream.
Above-mentioned resonator 9 makes laser back and forth and produces standing wave, possesses before as resonator reflective mirror by omitting illustrated Flashlamps exciting and the lasing such as ND:YAG rod 14 as laser medium, be configured at the rear of this ND:YAG rod 14 and be made up of the Q switching 18 formed as the polarization spectroscope 15 of polarization element, λ/4 wavelength plate 16 and Pockers cell 17 between reflective mirror 12 and rear reflector 13.
In this situation, the applying voltage of above-mentioned Pockers cell 17 is controlled in the mode reduced gradually by the illustrated control part of omission arranged in addition, can increase the second laser L 2pulse duration.
When this situation is described, when relative to the control making to reduce rapidly the applying voltage of Pockers cell 17 as shown in Fig. 3 (a) with as when making the mode reduced gradually the applying voltage of Pockers cell 17 control shown in figure (b), pulse duration such as increases to 70ns from 10ns.Like this, in vibration in resonator 9, export energy slowly to increase and lower than normal energy along time shaft from returning of Q switching 18, therefore, the taking-up of the energy in ND:YAG rod 14 also becomes slow, impulse hunting time lengthening in Q switching 18, the pulse duration exported becomes longer.
In addition, alive decrescence gradient is executed for Pockers cell, as shown in Figure 4, if control to apply voltage in the mode producing the point of inflexion at least one times, then can increase pulse duration further.Like this, by controlling the applying voltage to Pockers cell 17, can production burst width W 2for the second laser L of 350nsec 2.
In addition, the downstream of this resonator 9 is provided with image intensifer 10.The pulse energy of laser is amplified and is exported by this image intensifer 10, can use such as ND:YAG rod.
In addition, the downstream of this image intensifer 10 is provided with laser attenuator 11.This laser attenuator 11 makes the second laser L 2energy reduce, as shown in Figure 5, its structure possesses: at the second laser L 2light path on be configured as first and second polarization spectroscope 19A, 19B as polarization element of Nicol crossed (crossed nicols); The rectilinearly polarized light (such as P polarised light) relatively injected with optical axis is configured between this first and first polarization spectroscope 19A, 19B in the modes of 45 °, make the Pockers cell 20 as photoelectric cell rotated by the plane of polarization of the laser of inside by applying voltage; And, to the control part 21 that applying magnitude of voltage and the application time of this Pockers cell 20 control.
The Pockers cell 20 used in present embodiment, as an example, the effect obtaining λ/4 wavelength plate is applied by the voltage of maximum-3.6kV, by by first and second Pockers cell 20A, 20B configured in series, carry out Parallel Control with maximum applying voltage-3.6kV simultaneously, obtain the effect of λ/2 wavelength plate with first and second Pockers cell 20A, 20B combination.This situation, make the applying voltage of first and second Pockers cell 20A, 20B when such as changing between 0kV ~-3.6kV, the laser light transmission of attenuator 11 changes between 0% ~ 100%.
In addition, above-mentioned laser attenuator 11, by the applying voltage by time controling Pockers cell 20, can, by the envelope planarization of the laser of 1 pulse, make laser energy even along time shaft.Such as, to laser with attenuator 11 input as shown in Fig. 6 (a) at time t nsecond laser L of the long pulse of the pulse energy that interior release is excessive 2when, such as, when this pulse energy being reduced by 50%, then by time t nthe interior applying voltage control to first and first Pockers cell 20A, 20B is-1.8kV, at elapsed time t nafter control at-3.6kV.
Thus, at initial time t ninterior transmitted through the second laser L of laser with attenuator 11 2transmissivity be reduced to 50%, at elapsed time t nafter, transmissivity is 100%.Therefore, with regard to the long pulse second laser L shown in Fig. 6 (a) 2, initial time t ninterior laser intensity reduces by 50%, elapsed time t nafter laser intensity then still maintain former intensity.Its result, as shown in Fig. 6 (b), the constant in whole width of the laser intensity in 1 pulse.
In addition, in fig. 2, symbol 22 is polarization spectroscopes, and symbol 23 is the laser beam expanders of the expanded in diameter making laser beam, and symbol 24 is speculums.
The joint of the light path of above-mentioned first pulse laser 6 and the light path of above-mentioned second pulse laser 7 is provided with synthesizer 8.This synthesizer 8 is by the first laser L 1with the second laser L 2synthesizing same optical axis, such as, is transmission λ 1the first laser L of=355nm 1, and reflect λ 2the second laser L of=1064nm 2dichronic mirror.
The downstream of above-mentioned light supply apparatus 1 is provided with lighting device 2.This lighting device 2 is devices of the predetermined annealing region irradiating laser to the amorphous silicon film 5 on substrate 4, possesses successively from the direct of travel upstream of laser towards downstream: the first fly's-eye lens 25, first collector lens 26, second fly's-eye lens 27, beam scanner 28 and the second collector lens 29 and form.
Above-mentioned first fly's-eye lens 25 arranges in same plane possesses multiple convex lens, makes the uniform intensity distribution in the cross section of laser, and realizes the function of the beam expander increasing laser beam.
On optical axis, front focus is made to be provided with the first collector lens 26 with being poised for battle the back focus of above-mentioned first fly's-eye lens 25.This first collector lens 26 for by after the first fly's-eye lens 25 penetrates and the light beam pack of the laser dispersed, to inject to aftermentioned second fly's-eye lens 27.
Above-mentioned second fly's-eye lens 27 is for making the uniform intensity distribution in the cross section of laser, and it is following structure, is oppositely disposed by a pair lens arra that arrangement in the same face possesses multiple convex lens in the mode that the central shaft of the convex lens of correspondence is consistent.
Above-mentioned beam scanner 28 possesses: mutually in vertical direction carry out the flat column of deflection action first and second photoelectricity crystallization unit 30,31 and at the plane of polarization half-twist of this first and second photoelectricity crystallization unit 30,31 chien shih laser and λ/2 wavelength plate 32 of the crystallographic axis of the second photoelectricity crystallization unit 31 that aligns and forming, the opposite face parallel with the optical axis of first and second photoelectricity crystallization unit 30,31 is respectively arranged with pair of electrodes 33A, 33B.In this situation, between the pair of electrodes 33A of the first photoelectricity crystallization unit 30 and pair of electrodes 33B of the second photoelectricity crystallization unit 31, to be installation site be mutually staggers the relation of 90 degree centered by optical axis.
Above-mentioned second collector lens 29 is configured such that front focus aims at the back focus position on the optical axis of above-mentioned second fly's-eye lens 27, realizes making the laser exposed on substrate 4 be the function of directional light.
First pulse laser 6 of above-mentioned light supply apparatus 1 and the second pulse laser 7 ground connection that is electrically connected is provided with control device 3.This control device 3 acts on first and second pulse laser 6,7 thus controls first and second laser L 1, L 2generation time, specifically, with the first laser L 1at the second laser L 2pulse duration W 2the mode that the interior scheduled time produces controls the first pulse laser 6.
More specifically, control device 3 can control the first pulse laser 6, and at the second laser L 2pulse duration W 2the generation time of interior adjustment first laser.Thereby, it is possible to suitably adjust the irradiation energy of the laser irradiated to amorphous silicon film 5.
Then, the action of laser anneal device as constructed as above is described.
First, upper surface is placed with has the illustrated step of omission of the substrate 4 of amorphous silicon film 5 along moving in two dimensional directions in the face parallel with its upper surface at surface filming, the center being annealed region on substrate 4 is aimed at the optical axis of lighting device 2.
Then, execute alive decrescence gradient by what omit that illustrated control part controls the Pockers cell 17 of the second pulse laser 7 in the mode becoming predetermined decrescence gradient, generate such as pulse duration W 2=350nsec, wavelength X 2the long pulse second laser L of=1064nm 2.
This second laser L 2after being amplified to constant level by follow-up image intensifer 10, by the applying voltage of Parallel Control laser with first and second Pockers cell 20A, 20B of attenuator 11, be reduced to the sufficient energy intensity by testing in advance needed for confirmed annealing in process.In addition, meanwhile, as shown in Fig. 7 (b), the constant in whole width of the laser intensity in 1 pulse is made.Then, the second laser L 2reflected by the dichronic mirror of synthesizer 8, and incide the lighting device 2 of back segment.
On the other hand, controlled by control device 3, make the first pulse laser 6 postpone Time constant after the driving of the second pulse laser 7 and drive again, generate such as pulse duration W 1=20nsec, wavelength X 1first laser L of the short pulse such as shown in Fig. 7 (a) of=355nm 1.Then, this first laser L 1transmitted through the dichronic mirror of synthesizer 8, with the second laser L 2synthesize same optical axis and incide lighting device 2.
First and second laser L of above-mentioned synthesis 1, L 2increase beam diameter by lighting device 2, after making uniform intensity distribution, carry out deflection along two-dimensional directional by beam scanner 28 on the surface at substrate 4 and adjust irradiation position.Thus, first and second laser L can be made 1, L 2mutually do not interfere and the laser of uniform intensity distribution is irradiated on substrate 4.Its result, this amorphous silicon film 5 being annealed region dissolve recrystallize and phase transformation turn to polysilicon.
At this, be described in more detail first and second laser L 1, L 2the annealing in process of carrying out.
As shown in Figure 8, usually, with regard to silicon (Si), known, the wavelength of laser is longer, then absorptivity is lower.Therefore, usually, when carrying out annealing in process to amorphous silicon film 5, use absorptivity is higher, such as wavelength is the ultraviolet laser such as 355nm.
On the other hand, also the known silicon dissolved is low to ultraviolet absorptivity.Therefore, when the irradiation energy of ultraviolet laser is not high enough, when the surface of amorphous silicon film 5 being dissolved by the irradiation of ultraviolet laser, the absorptivity of the ultraviolet laser after causing reduces and the situation that cannot fully dissolve to amorphous silicon film 5 deep.Therefore, also cause amorphous silicon film 5 cannot fully multi-crystal silicification to the situation in deep.
In contrast, as shown in Figure 8, the laser due to the such as 1064nm of long wavelength is difficult to be absorbed by silicon, so usually can not be used for laser annealing process.But, also know that the laser of long wavelength is more easily dissolved silicon and absorbs.
Therefore, in the present invention, first, by the first laser L of short wavelength 1after being dissolved by amorphous silicon film 5, then pass through the second laser L of long wavelength 2amorphous silicon film 5 is dissolved to deep.
Specifically, as shown in Fig. 9 (a), the second laser L is produced 2and make after it exposes to amorphous silicon film 5, at this second laser L 2pulse duration W 2interior in the regular hour, such as, from the second laser L 2the time after t=100nsec of rising in generation moment (pulse rising time) produce the first laser L 1.In this situation, at irradiation first laser L 1before, amorphous silicon film 5 does not absorb the second laser L 2, therefore, amorphous silicon film 5 can not dissolve.But, passing through the first laser L 1irradiation and when amorphous silicon film 5 is temporarily dissolved, afterwards, amorphous silicon film 5 absorbs the second laser L 2and dissolve to darker.In this situation, at first and second laser L 1, L 2in, the energy being applicable to the annealing in process of amorphous silicon film 5 is the energy being marked with the region of oblique line in same figure (a).
In the present invention, by the second laser L 2pulse duration W 2interior suitable adjustment first laser L 1generation time, and the irradiation energy of laser can be adjusted.Such as, as shown in Fig. 9 (b), at generation second laser L 2while produce the first laser L 1when, the energy being applicable to the annealing in process of amorphous silicon film 5 becomes the energy with being marked with the region of oblique line in figure (b), and with scheming compared with (a), can increase irradiation energy.Certainly, also can be contrary.
In addition, in the above-described embodiment, describe and the situation that annealing in process is carried out in region is annealed to a position on amorphous silicon film 5, but the present invention is not limited thereto, also can arrange in the light emitting side corresponding multiple annealing region of configuration of the second collector lens 29 of such as lighting device 2 and possess multiple lenticular microlens array, generate multiple synthetic laser from a synthetic laser and annealing in process carried out to multiple region that is annealed simultaneously.In this situation, because the utilization ratio of laser energy is higher compared to existing technology, so the pulse laser used can the applied power laser less than prior art.
In addition, also the direction that substrate 4 intersects with constant speed edge and above-mentioned lenticular orientation can be transported, undertaken taking by camera in advance and detect and be multiplely annealed region, after detecting this annealing region, substrate 4 is moved a certain distance, above-mentioned multiple be annealed region arrive microlens array multiple lenticular immediately below time, control first and second pulse laser 6,7 and produce first and second laser L 1, L 2.Thus, annealing in process can be carried out in the lump to multiple regions that are annealed of the column-shaped in the direction intersected with substrate 4 conveyance direction, repeatedly can carry out annealing in process along substrate conveyance direction simultaneously, annealing in process is carried out to the whole surface of substrate 4.

Claims (5)

1. a laser anneal device, to amorphous silicon film irradiating laser to carry out annealing in process, is characterized in that, possesses:
First pulse laser, it produces first laser with the constant wavelength of constant pulse duration;
Second pulse laser, it produces the second laser that described in pulse duration and wavelength ratio, the first laser is longer;
Synthesizer, described first laser and described second Laser synthesizing are same optical axis by it;
Control device, it acts on first and second pulse laser described thus controls the generation time of first and second laser described,
Described control device controls described first pulse laser, and the scheduled time of described first laser in the pulse duration of described second laser is produced.
2. laser anneal device as claimed in claim 1, is characterized in that,
Described control device controls described first pulse laser thus can adjust the generation time of described first laser in the pulse duration of described second laser.
3. laser anneal device as claimed in claim 1 or 2, is characterized in that,
Described first pulse laser produces described first laser of wavelength 355nm or 532nm,
Described second pulse laser produces described second laser of wavelength 1064nm.
4. a laser anneal method, be same optical axis by having the second Laser synthesizing that described in the first laser of the constant wavelength of constant pulse duration and pulse duration and wavelength ratio, the first laser is longer and irradiate to amorphous silicon film, to carry out annealing in process, it is characterized in that, carry out following step:
Produce described second laser and the step of it being irradiated to described amorphous silicon film;
Predetermined time in the pulse duration of described second laser produces described first laser and the step of it being irradiated to this amorphous silicon film.
5. laser anneal method as claimed in claim 4, is characterized in that,
The wavelength of described first laser is 355nm or 532nm,
The wavelength of described second laser is 1064nm.
CN201380017446.9A 2012-03-30 2013-03-08 Laser anneal device and laser anneal method Expired - Fee Related CN104272434B (en)

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