CN104272434B - Laser anneal device and laser anneal method - Google Patents

Laser anneal device and laser anneal method Download PDF

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Publication number
CN104272434B
CN104272434B CN201380017446.9A CN201380017446A CN104272434B CN 104272434 B CN104272434 B CN 104272434B CN 201380017446 A CN201380017446 A CN 201380017446A CN 104272434 B CN104272434 B CN 104272434B
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laser
pulse
amorphous silicon
silicon film
wavelength
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CN104272434A (en
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水村通伸
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V Technology Co Ltd
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
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    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements
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Abstract

The present invention provides a kind of laser anneal device and laser anneal method, and it irradiates laser to be made annealing treatment to amorphous silicon film, and the laser anneal device possesses：Produce the first laser (L of the constant wavelength with constant pulse width1) first pulse laser (6), produce first laser (L described in pulse width and wavelength ratio1) longer second laser (L2) second pulse laser (7), by the first laser (L1) and the second laser (L2) synthesize same optical axis synthesizer (8) and, to the first pulse laser and second pulse laser (6,7) effect so as to controlling first and second laser (L1、L2) generation time control device (3), the control device (3) controls the first pulse laser (6) so that the first laser (L1) in the second laser (L2) pulse width in the scheduled time produce.

Description

Laser anneal device and laser anneal method
Technical field
The present invention relates to laser is irradiated into laser anneal device to be made annealing treatment to amorphous silicon film, more particularly, to The laser anneal device and laser anneal method that improves the utilization ratio of laser energy and can efficiently be made annealing treatment.
Background technology
Existing laser anneal device, the laser intermittently moved is formed to island substrate main surface it is multiple Film is annealed to be irradiated respectively, by the plurality of annealed film turn into desired characteristic film in a manner of annealed, pass through by The laser of point-like is multiple to being annealed film reirradiation, and (for example, referenced patent document 1) is annealed to being annealed film.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 9-45632 publications
Invent problem to be solved
But in above-mentioned existing annealing device, because the laser of irradiation is the ultraviolet laser of single wavelength, because The problem of this, is present when the irradiation by laser makes that for example amorphous silicon film dissolves, and the absorptivity of ultraviolet laser reduces.Cause This, it is impossible to fully dissolve to amorphous silicon film deep, often multi-crystal silicification is insufficient.
In addition, will be from multiple laser of laser generation point-like as caused by a light supply apparatus and to being annealed film Multiple positions simultaneously made annealing treatment in the case of, due to laser irradiation energy reduce, so needing laser energy more Big large-scale light supply apparatus, the problem of manufacturing cost that annealing device be present increases.
For these problems, annealed although also allowing for by multiple transmittings (shot) of laser to being annealed film, But annealing efficiency reduction be present, make annealing treatment process production cycle it is elongated the problem of.
The content of the invention
Therefore, point regarding to the issue above, it is an object of the present invention to provide a kind of utilization ratio for improving laser energy simultaneously The laser anneal device and laser anneal method that can be efficiently made annealing treatment.
To achieve the above object, the present invention provides a kind of laser anneal device, irradiates laser to amorphous silicon film to be moved back Fire processing, wherein, possess：First pulse laser, it produces the first laser of the constant wavelength with constant pulse width； Second pulse laser, it produces the longer second laser of first laser described in pulse width and wavelength ratio；Synthesizer, it will The first laser and the second laser synthesize same optical axis；Control device, it is to first and second described pulse laser So as to control the generation time of first and second laser, the control device controls first pulse laser for device effect Device, to cause the scheduled time of the first laser in the pulse width of the second laser to produce.
By said structure, first pulse laser is controlled by control device, produced with constant pulse width The first laser of constant wavelength, and second pulse laser is controlled, produce pulse width and the wavelength ratio first laser is longer Second laser, by synthesizer, first laser and second laser are synthesized into same optical axis, and first is irradiated to amorphous silicon film And second laser is to be made annealing treatment.Now, by control device with first laser in the pulse width of second laser Mode controls first pulse laser caused by the scheduled time.
It is preferred that the control device controls the first pulse laser so as in the pulse width of the second laser The generation time of the interior adjustment first laser.
It is further preferred that the first laser of first pulse laser generation the wavelength 355nm or 532nm, described second Pulse laser produces the wavelength 1064nm second laser.
In addition, the present invention provides a kind of laser anneal method, by first of the constant wavelength with constant pulse width The longer second laser of first laser described in laser and pulse width and wavelength ratio synthesizes same optical axis and shone to amorphous silicon film Penetrate, to be made annealing treatment, wherein, carry out the steps：Produce the second laser and shine it to the amorphous silicon film The step of penetrating；Predetermined time in the pulse width of the second laser produces the first laser and by it to the amorphous The step of silicon fiml irradiates.
The wavelength of preferably described first laser is 355nm~532nm, and the wavelength of the second laser is 1064nm.
Invention effect
According to the present invention, even if because the irradiation of first laser dissolves amorphous silicon film and makes the absorptivity of the first laser Reduce, also can the absorbing wavelength second laser longer than the first laser and carry out dissolving for amorphous silicon film, so as to will Amorphous silicon film is made annealing treatment to deep.Therefore, compared to the ultraviolet using only prior art laser situation, Neng Gouti The utilization ratio of high laser energy, and can efficiently be made annealing treatment.
Brief description of the drawings
Fig. 1 is the front elevation for the embodiment for representing the laser anneal device of the present invention.
Fig. 2 is the plan of one configuration example of second pulse laser for representing to use in above-mentioned embodiment.
Fig. 3 is represented in above-mentioned second pulse laser, is controlled the application voltage of the Pockers cell of Q-switch and is generated long pulse The explanation figure of the second laser of punching, (a) are the charts for representing common control, and (b) is to represent to make the chart of application voltage decrescence.
Fig. 4 is represented in above-mentioned Fig. 3 (b), and control applies voltage so that applying alive decrescence gradient produces a contrary flexure The chart of the laser pulse generated during point.
Fig. 5 is the plan of a configuration example of laser attenuator for representing to use in above-mentioned second pulse laser.
Fig. 6 is to represent above-mentioned laser with the energy for selectively reducing special time in the laser of 1 pulse of attenuator The explanation figure of state, (a) represent the state before reducing, and (b) represents the state after reducing.
Fig. 7 is the explanation of an example of the impulse waveform of first and second laser for representing to use in above-mentioned embodiment Figure, (a) represent first laser, and (b) represents second laser.
Fig. 8 is to represent the chart of the wavelength of various inorganic material to the relation of the absorption coefficient of light.
Fig. 9 is represented in the laser anneal method of the present invention, to be made annealing treatment and the laser energy of useful effect Explanation figure, (a) represents that stipulated time in the pulse width of second laser produces the situation of first laser, and (b) represents same When produce the situation of first and second laser.
Description of symbols
3：Control device
5：Amorphous silicon film
6：First pulse laser
7：Second pulse laser
8：Synthesizer
L1：First laser
L2：Second laser
Embodiment
Hereinafter, embodiments of the present invention are described in detail based on accompanying drawing.Fig. 1 is the laser anneal device for representing the present invention The front elevation of embodiment.The laser anneal device irradiates laser to amorphous silicon film and made annealing treatment, and possesses：Light supply apparatus 1st, lighting device 2 and control device 3.
Above-mentioned light supply apparatus 1 is generated for the laser that the amorphous silicon film 5 of film forming is made annealing treatment on substrate 4, bag Contain：First pulse laser 6, second pulse laser 7 and synthesizer 8 and form.
Here, above-mentioned first pulse laser 6 produces such as pulse width W1For 20nsec, wavelength X1For 355nm or 532nm first laser L1, be for example using nonlinear optical crystal carry out wavelength conversion from wavelength 1064nm basic wave and The known YAG laser of generation.In addition, in the following description, with first laser L1For λ1The situation of=355nm laser is carried out Description.In addition, first pulse laser 6 is not limited to YAG laser, then can also be for example accurate as long as producing the laser of short wavelength Molecular laser etc., situation of YAG laser is illustrated at this.
Above-mentioned second pulse laser 7 produces pulse width and wavelength ratio first laser L1Longer second laser L2, it is raw Into such as pulse width W2For 350nsec, wavelength X2For the YAG laser of 1064nm laser.In addition, second pulse laser 7 is not It is limited to YAG laser, then can also is such as CO as long as producing the laser of long wavelength2Laser etc., at this to the situation of YAG laser Illustrate.
More specifically, as shown in Fig. 2 second pulse laser 7 possesses：Resonator 9, image intensifer 10 and laser are used Attenuator 11, they are from second laser L2Direct of travel upstream configured in order towards downstream.
Above-mentioned resonator 9 makes laser reciprocal and produces standing wave, in the preceding reflective mirror 12 as resonator reflective mirror and anti-afterwards Possess between light microscopic 13 and produce such as ND as laser medium of laser by omitting the Flashlamps exciting of diagram：YAG rods 14th, it is configured at the ND：The rear of YAG rods 14 and by the polarization spectroscope 15 as polarization element, the wavelength plate 16 of λ/4 and general gram Q-switch 18 that your box 17 is formed and form.
In this case, the control unit illustrated to the application voltage of above-mentioned Pockers cell 17 by the omission set in addition with by The mode gradually reduced is controlled, can increase second laser L2Pulse width.
When illustrating this situation, relative to make that the application voltage to Pockers cell 17 rapidly reduces such as Fig. 3 (a) Suo Shi one As control in a manner of the application voltage to Pockers cell 17 is gradually reduced as shown in figure (b) situation about being controlled Under, pulse width for example increases to 70ns from 10ns.So, in the vibration in resonator 9, the return from Q-switch 18 is defeated Go out energy to be slowly increased along time shaft and lower than normal energy, therefore, ND：The taking-up of energy in YAG rods 14 also becomes Slowly, the impulse hunting time lengthening in Q-switch 18, the pulse width exported become longer.
In addition, alive decrescence gradient is applied for Pockers cell, if as shown in figure 4, to produce contrary flexure at least once The mode of point controls application voltage, then can further increase pulse width.So, by controlling the application electricity to Pockers cell 17 Pressure, can generate pulse width W2For 350nsec second laser L2。
In addition, the downstream of the resonator 9 is provided with image intensifer 10.The image intensifer 10 puts the pulse energy of laser Greatly and export, such as ND can be used：YAG rods.
In addition, the downstream of the image intensifer 10 is provided with laser attenuator 11.The laser attenuator 11 makes second Laser L2Energy reduce, as shown in figure 5, its structure possesses：In second laser L2Light path on be configured as crossed Nicol rib First and second polarization spectroscope 19A, 19B as polarization element of mirror (crossed nicols)；With the relative injection of optical axis Rectilinearly polarized light (such as P polarization light) is configured in a manner of 45 ° between first and first polarization spectroscope 19A, the 19B, is led to Cross the Pockers cell 20 for being used as photoelectric cell for applying voltage and rotating the plane of polarization by the laser of inside；And to this The control unit 21 that application magnitude of voltage and the application time of Pockers cell 20 are controlled.
The Pockers cell 20 used in present embodiment, as one, applied by maximum -3.6kV voltage to obtain The effect of the wavelength plate of λ/4, by by first and second Pockers cell 20A, 20B arranged in series, while with maximum apply voltage- 3.6kV carries out Parallel Control, and the effect for obtaining the wavelength plate of λ/2 is combined with first and second Pockers cell 20A, 20B.The situation, When making first and second Pockers cell 20A, 20B application voltage change between such as 0kV~-3.6kV, laser is with declining The light transmission for subtracting device 11 changes between 0%~100%.
In addition, above-mentioned laser with attenuator 11 by the application voltage by time control Pockers cell 20, can be by 1 arteries and veins The envelope planarization of the laser of punching, makes laser energy uniform along time shaft.For example, such as schemed with the input of attenuator 11 to laser Shown in 6 (a) in time tnThe second laser L of the long pulse of the excessive pulse energy of interior release2In the case of, such as inciting somebody to action When the pulse energy reduces by 50%, then by time tnThe interior application voltage to first and first Pockers cell 20A, 20B controls For -1.8kV, in elapsed time tnAfter control in -3.6kV.
Thus, in initial time tnThe interior second laser L transmitted through laser attenuator 112Decrease in transmission to 50%, In elapsed time tnAfterwards, transmissivity 100%.Therefore, with regard to the long pulse second laser L shown in Fig. 6 (a)2For, the initial time tnInterior laser intensity reduces by 50%, elapsed time tnLaser intensity afterwards then still maintains former intensity.As a result, such as Fig. 6 (b) It is shown, laser intensity in the 1 pulse constant in whole width.
In addition, in fig. 2, symbol 22 is polarization spectroscope, symbol 23 is the laser beam expanding for the expanded in diameter for making laser beam Device, symbol 24 are speculums.
It is provided with the light path of above-mentioned first pulse laser 6 and the joint of light path of above-mentioned second pulse laser 7 Synthesizer 8.The synthesizer 8 is by first laser L1With second laser L2Same optical axis is synthesized, e.g. transmits λ1= 355nm first laser L1, and reflect λ2=1064nm second laser L2Dichronic mirror.
The downstream of above-mentioned light supply apparatus 1 is provided with lighting device 2.The lighting device 2 is to the non-crystalline silicon on substrate 4 The device of the predetermined annealing region irradiation laser of film 5, possesses successively from the direct of travel upstream of laser towards downstream：First is multiple Eyelens 25, first collector lens 26, the second fly's-eye lens 27, the collector lens 29 of beam scanner 28 and second and form.
Above-mentioned first fly's-eye lens 25 arrange in the same plane possesses multiple convex lens, makes strong in the cross section of laser Degree is evenly distributed, and realizes the function of the beam expander of increase laser beam.
On optical axis, front focus is set to be provided with first collector lens with being poised for battle the rear focus of above-mentioned first fly's-eye lens 25 26.The first collector lens 26 be used for by after first fly's-eye lens 25 project and dissipate laser light beam pack, with backward The second fly's-eye lens 27 is stated to inject.
Above-mentioned second fly's-eye lens 27 is used to make the uniform intensity distribution in the cross section of laser, and it is following structure, will A pair of lens arrays for possessing multiple convex lens phase in a manner of the central shaft of corresponding convex lens is consistent is arranged in the same face To configuration.
Above-mentioned beam scanner 28 possesses：First and second light of the flat column of deviation action is mutually carried out in vertical direction Electrocrystallization element 30,31 and the plane of polarization of laser is set to be rotated by 90 ° and right between first and second photoelectricity crystallization unit 30,31 The wavelength plate 32 of the λ of the crystallographic axis of neat second photoelectricity crystallization unit 31/2 and form, with first and second photoelectricity crystallization unit 30,31 The parallel opposite face of optical axis on be respectively arranged with a pair of electrodes 33A, 33B.In this case, the one of first photoelectricity crystallization unit 30 To between electrode 33A and a pair of electrodes 33B of second photoelectricity crystallization unit 31, being that installation site is the mutual mistake centered on optical axis Open 90 degree of relation.
Above-mentioned second collector lens 29 is arranged to rear Jiao for making front focus be aligned on the optical axis of above-mentioned second fly's-eye lens 27 Point position, the laser that realizing makes to expose on substrate 4 are in the function of directional light.
Control dress is provided with electrically with the first pulse laser 6 and second pulse laser 7 of above-mentioned light supply apparatus 1 Put 3.The control device 3 is acted on first and second pulse laser 6,7 so as to control first and second laser L1、L2Generation Time, specifically, with first laser L1In second laser L2Pulse width W2Mode caused by the interior scheduled time controls One pulse laser 6.
More specifically, control device 3 can control first pulse laser 6, and in second laser L2Pulse width W2 The generation time of interior adjustment first laser.Thereby, it is possible to suitably adjust the irradiation energy of the laser irradiated to amorphous silicon film 5.
Then, the action of laser anneal device as constructed as above is illustrated.
First, make upper surface be placed with the step of the omission diagram of the substrate 4 that has amorphous silicon film 5 in surface filming with its The parallel face interior edge moving in two dimensional directions in upper surface, the center for being annealed region on substrate 4 is directed to the light of lighting device 2 Axle.
Then, second pulse laser is controlled in a manner of as predetermined decrescence gradient omitting the control unit of diagram 7 Pockers cell 17 applies alive decrescence gradient, generates such as pulse width W2=350nsec, wavelength X2=1064nm's Long pulse second laser L2。
Second laser L2After constant level is amplified to by follow-up image intensifer 10, pass through Parallel Control laser With first and second Pockers cell 20A, 20B of attenuator 11 application voltage, it is reduced to and is confirmed by testing in advance Annealing needed for sufficient energy intensity.In addition, simultaneously, as shown in Fig. 7 (b), the laser intensity in 1 pulse is set to exist Constant in whole width.Then, second laser L2Reflected by the dichronic mirror of synthesizer 8, and incide back segment Lighting device 2.
On the other hand, it is controlled by control device 3, makes drive of the first pulse laser 6 in second pulse laser 7 Delay Time constant is driven again after dynamic, generates such as pulse width W1=20nsec, wavelength X1=355nm such as Fig. 7 (a) the first laser L of the short pulse shown in1.Then, first laser L1Transmitted through the dichronic mirror of synthesizer 8, swash with second Light L2Synthesize same optical axis and incide lighting device 2.
First and second laser L of above-mentioned synthesis1、L2Beam diameter is increased by lighting device 2, makes uniform intensity distribution Afterwards, it is inclined to by beam scanner 28 on the surface of substrate 4 along two-dimensional directional to adjust irradiation position.Thus, can be made One and second laser L1、L2Do not interfere and the laser of uniform intensity distribution is irradiated on substrate 4.As a result, this is annealed The amorphous silicon film 5 in region, which dissolves, to be recrystallized and phase transformation turns to polysilicon.
Here, first and second laser L is described in more detail1、L2The annealing of progress.
As shown in figure 8, generally, for silicon (Si), it was known that the wavelength of laser is longer, then absorptivity is lower.Therefore, Generally, in the case of being made annealing treatment to amorphous silicon film 5, using absorptivity it is higher, such as wavelength be 355nm it is ultraviolet The laser of line.
On the other hand, it is also known that the silicon dissolved is low to the absorptivity of ultraviolet.Therefore, in the irradiation energy of ultraviolet laser In the case of not high enough, when dissolving the surface of amorphous silicon film 5 by the irradiation of ultraviolet laser, the ultraviolet after causing The absorptivity of laser is reduced and can not fully dissolved to the situation in the deep of amorphous silicon film 5.Therefore, also resulting in amorphous silicon film 5 can not Fully multi-crystal silicification to deep situation.
In contrast, as shown in figure 8, because such as 1064nm of long wavelength laser is difficult to be absorbed by silicon, so generally It cannot be used for laser annealing processing.But it is also known that the laser of long wavelength is easier to be absorbed by dissolved silicon.
Therefore, in the present invention, first, the first laser L of short wavelength is passed through1Amorphous silicon film 5 is dissolved and then passed through The second laser L of long wavelength2Amorphous silicon film 5 is dissolved to deep.
Specifically, as shown in Fig. 9 (a), second laser L is produced2And it is exposed to after amorphous silicon film 5, this Dual-laser L2Pulse width W2It is interior in the regular hour, such as from second laser L2The generation moment (pulse rising time) rise Time after t=100nsec produces first laser L1.In this case, in irradiation first laser L1Before, amorphous silicon film 5 is not inhaled Receive second laser L2, therefore, amorphous silicon film 5 will not dissolve.But passing through first laser L1Irradiation and make amorphous silicon film 5 temporary When dissolving, afterwards, amorphous silicon film 5 absorbs second laser L2And dissolve to deeper.In this case, in first and second laser L1、 L2In, the energy suitable for the annealing of amorphous silicon film 5 is with the energy that the region having is marked figure (a).
In the present invention, by second laser L2Pulse width W2Inside suitably adjust first laser L1Generation time, And the irradiation energy of laser can be adjusted.For example, as shown in Fig. 9 (b), second laser L is being produced2While produce first laser L1In the case of, the energy suitable for the annealing of amorphous silicon film 5 turns into the energy that the region having is marked figure (b) Amount, with compared with figure (a), irradiation energy can be increased.It is of course also possible to it is opposite.
In addition, in the above-described embodiment, illustrate to anneal to the region that is annealed at a position on amorphous silicon film 5 The situation of processing, but the invention is not restricted to this, can also match somebody with somebody in the light emitting side of the second collector lens 29 of such as lighting device 2 Put corresponding multiple annealing regions and arrange the microlens array for possessing multiple lenticules, multiple synthesis are generated from a synthetic laser Laser simultaneously makes annealing treatment to multiple regions that are annealed simultaneously.In this case, because the utilization ratio of laser energy is compared to existing Have that technology is higher, so used pulse laser can apply the smaller laser of power ratio prior art.
Removed in direction alternatively, it is also possible to which substrate 4 is intersected with constant speed along the orientation with above-mentioned lenticule Send, shot in advance by camera and detect it is multiple be annealed region, by substrate 4 after the annealing region is detected Move a certain distance, it is above-mentioned it is multiple be annealed multiple lenticules that region reaches microlens array underface when, control the One and first and second laser of generation of second pulse laser 6,7 L1、L2.Thus, can pair side intersected with the conveyance direction of substrate 4 To the multiple of column-shaped be annealed region and made annealing treatment in the lump, while can be repeated along substrate conveyance direction at annealing Reason, makes annealing treatment to the whole surface of substrate 4.

Claims (4)

1. a kind of laser anneal device, laser is irradiated to be made annealing treatment to amorphous silicon film, it is characterised in that possess：
First pulse laser, it produces first laser；
Second pulse laser, it produces the longer second laser of first laser described in pulse width and wavelength ratio, and possesses The energy in the special time of the second laser is optionally reduced so that its uniform laser attenuator, the laser With attenuator by be configured as two polarization elements of Nicol crossed, be configured at described two polarization elements it Between, and by apply voltage make by inside laser plane of polarization rotate photoelectric cell and, in the second laser During by the photoelectric cell, the control unit that application magnitude of voltage and application time to the photoelectric cell are controlled is formed；
Synthesizer, the first laser and the second laser are synthesized same optical axis by it；
Control device, it acts on first and second described pulse laser so as to control the generation of first and second laser Time,
The control device, by adjusting the generation time of the first laser in the pulse width of the second laser, adjust The irradiation energy of the whole laser for being applied to annealing, so as to by the first laser by the surface of the amorphous silicon film Dissolve and then dissolved the amorphous silicon film to deep by the second laser.
2. laser anneal device as claimed in claim 1, it is characterised in that
The first pulse laser produces wavelength 355nm or the 532nm first laser,
The second pulse laser produces the wavelength 1064nm second laser.
A kind of 3. laser anneal method, by the longer second laser of first laser described in first laser and pulse width and wavelength ratio Synthesize same optical axis and irradiated to amorphous silicon film, to be made annealing treatment, it is characterised in that carry out the steps：
Produce the second laser, and be passed to be configured at be configured to Nicol crossed two polarization elements it Between and by apply voltage make by inside laser plane of polarization rotate photoelectric cell in, pass through in the second laser During, application magnitude of voltage and application time to the photoelectric cell are controlled to swash so as to optionally reduce described second Energy in the special time of light make its uniformly, and by its to the amorphous silicon film irradiate the step of；
By adjusting the generation time of the first laser in the pulse width of the second laser, adjustment is applied at annealing The irradiation energy of the laser of reason simultaneously irradiates to the amorphous silicon film, so as to by the first laser by the table of the amorphous silicon film The step of face dissolves and then is dissolved the amorphous silicon film to deep by the second laser.
4. laser anneal method as claimed in claim 3, it is characterised in that
The wavelength of the first laser is 355nm or 532nm,
The wavelength of the second laser is 1064nm.
CN201380017446.9A 2012-03-30 2013-03-08 Laser anneal device and laser anneal method Expired - Fee Related CN104272434B (en)

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