KR102551147B1 - Array substrate, display panel having the same and method of manufacturing the same - Google Patents

Abstract

The laser device includes a laser generator for generating a first laser beam, and an inverting module for converting the first laser beam and emitting a second laser beam. The inversion module includes a first prism including a first incident surface, a first exit surface, and a first reflection surface, a second incident surface parallel to the first exit surface, a second exit surface parallel to the first incident surface, and a second incident surface parallel to the first incident surface. It includes a second prism including 2 reflective surfaces. The first laser beam sequentially passes through the first prism and the second prism along different optical paths to form a transmission laser beam and a reflection laser beam, and the transmission laser beam and the reflection laser beam are mixed to form a second laser beam. .

Description

Laser device {ARRAY SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME}

The present invention relates to a laser device, and more particularly, to a laser device used in excimer laser annealing (ELA).

In general, methods for crystallizing an amorphous silicon layer into a poly-crystal silicon layer include solid phase crystallization (SPC), metal induced crystallization (MIC), There are Metal Induced Lateral Crystallization (MILC) and Excimer Laser Annealing (ELA). In particular, in the manufacturing process of an organic light emitting diode display (OLED) or a liquid crystal display (LCD), the excimer laser heat treatment method (ELA) crystallizes amorphous silicon into polycrystalline silicon using a laser beam ) is used.

A laser device used in the excimer laser annealing (ELA) includes a laser generator for generating a source laser beam. The source laser beam is an initial unprocessed laser beam and has a rectangular cross section having a major axis and a minor axis. The source laser beam has an energy distribution of a Gaussian distribution in both the major axis direction and the minor axis direction. The Gaussian distribution means a normal distribution symmetrical about the mean.

However, when shaking occurs between a plurality of shots of the laser device, the energy distribution of the source laser beam may deviate from a normal distribution and thus become asymmetric. In this case, crystallization defects may occur in the polycrystalline silicon layer. Accordingly, complex optical systems for removing the asymmetry of the source laser beam are being developed, but a large number of optical lenses are required, resulting in low light efficiency, space limitations, and difficult beam alignment. .

Therefore, the technical problem of the present invention has been focused on this point, and an object of the present invention is to provide a laser device having a simple structure and improved light efficiency.

A laser device according to an embodiment for realizing the object of the present invention described above may include a laser generator for generating a first laser beam, and an inversion module for converting the first laser beam and emitting a second laser beam. there is. The inversion module includes a first prism including a first incident surface, a first exit surface, and a first reflection surface, a second incident surface parallel to the first exit surface, and a second exit surface parallel to the first incident surface. and a second prism including a surface and a second reflective surface. The first laser beam may sequentially pass through the first prism and the second prism along different optical paths to form a transmission laser beam and a reflection laser beam. The transmission laser beam and the reflection laser beam may be mixed to form the second laser beam.

In one embodiment of the present invention, the transmission laser beam and the reflection laser beam may achieve origin inversion of each other.

In one embodiment of the present invention, the first laser beam and the second laser beam may be positioned on the same straight line.

In one embodiment of the present invention, the first laser beam may be incident on the first incident surface of the first prism. The first emission surface may reflect a portion of the laser beam incident through the first incident surface to form the reflected laser beam, and may transmit a portion thereof to form the transmitted laser beam. The first reflective surface may reflect the reflective laser beam. The transmission laser beam and the reflected laser beam reflected from the first reflection surface may be incident to the second incident surface of the second prism. The second emission surface may transmit the transmission laser beam and reflect the reflection laser beam. The second reflection surface may reflect the reflected laser beam reflected from the second emission surface. The reflected laser beam reflected from the second reflection surface may be reflected from the second incident surface and then emitted through the second emission surface.

In one embodiment of the present invention, the first exit surface of the first prism may be disposed to form a first angle with the first incident surface. The first reflection surface may be disposed to form a second angle with the first incident surface. The first angle may be an acute angle of less than 90 degrees, and the second angle may be an obtuse angle of greater than 90 degrees and less than 180 degrees.

In one embodiment of the present invention, the second reflection surface may include a first inclined surface and a second inclined surface. A corner may be formed by meeting the first inclined surface and the second inclined surface. The corner may be disposed to form a third angle with the second incident surface. The first inclined surface and the second inclined surface may be disposed to form a fourth angle with each other.

In one embodiment of the present invention, the third angle may be an acute angle smaller than 90 degrees, and the fourth angle may be smaller than 180 degrees.

In one embodiment of the present invention, the first prism and the second prism may be spaced apart from each other.

In one embodiment of the present invention, the laser device may further include a moving unit for adjusting the spaced distance between the first prism and the second prism.

A laser device according to an embodiment for realizing the above object of the present invention includes a laser generator for generating a first laser beam, and an inversion module for converting the first laser beam and emitting a second laser beam. The inversion module includes a splitter that reflects a portion of the first laser beam to form a reflected laser beam and transmits a portion of the first laser beam to form a transmission laser beam, a mirror that reflects the transmission laser beam transmitted through the splitter, and the mirror and a prism for reflecting the transmitted laser beam reflected from the splitter toward the splitter.

In one embodiment of the present invention, the prism may include an incident surface and a reflective surface, and the reflective surface may include a first inclined surface and a second inclined surface forming a predetermined angle smaller than 180 degrees from each other.

In one embodiment of the present invention, the first laser beam and the second laser beam may be perpendicular to each other.

According to embodiments of the present invention, the laser device includes a laser generator for generating a first laser beam, and an inversion module for converting the first laser beam and emitting a second laser beam. The inversion module includes a first prism including a first incident surface, a first exit surface, and a first reflection surface, a second incident surface parallel to the first exit surface, and a second exit surface parallel to the first incident surface. and a second prism including a second reflective surface. Accordingly, the inversion module of the laser device may constitute an origin inversion module through a simple structure using the first and second prisms. Therefore, light efficiency can be improved.

In addition, a ratio between a reflected laser beam and a transmitted laser beam may be adjusted by adjusting a distance between the first exit surface of the first prism and the second incident surface of the second prism.

In addition, the first laser beam and the second laser beam are positioned on the same straight line, and accordingly, alignment of the laser beam of the laser device is facilitated.

However, the effects of the present invention are not limited to the above effects, and may be expanded in various ways without departing from the spirit and scope of the present invention.

1 is a schematic diagram of a laser device according to an embodiment of the present invention.
Figure 2 is a schematic explanatory diagram of the inversion module of the laser device of Figure 1;
FIG. 3 is a perspective view illustrating a first prism and a second prism of the inversion module of the laser device of FIG. 2 .
FIG. 4 is a detailed explanatory diagram of an inversion module of the laser device of FIG. 2 .
5 is a schematic diagram of a laser device according to an embodiment of the present invention.
6 is a schematic explanatory diagram of an inversion module of the laser device of FIG. 5;
7 is a perspective view showing a prism of an inversion module of the laser device of FIG. 5;
FIG. 8 is a detailed explanatory diagram of an inversion module of the laser device of FIG. 5 .
9 is a cross-sectional view schematically showing the structure of a thin film transistor manufactured using a laser device according to embodiments of the present invention and a display device including the same.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the drawings.

1 is a schematic diagram of a laser device according to an embodiment of the present invention.

Referring to FIG. 1 , the laser device includes a laser generator 100 , an inversion module 200 and a laser optical system 300 . The laser generator 100 generates laser light and radiates the laser light to the outside of the laser generator 100 . The first laser beam L1 emitted from the laser generator 100 in a first direction D1 passes through the inversion module 200 and forms a second laser beam L2 traveling along the first direction D1. processed into The second laser beam L2 passes through the laser optical system 300 and is converted into a third laser beam L3 that is emitted light traveling in a third direction D3 perpendicular to the first direction D1. The laser beam L3 is irradiated toward the target object 400 disposed on the stage 500 spaced apart from the laser optical system 300 in the third direction D3.

The stage 500 includes a flat upper surface, and the irradiated object 400 may be positioned on the upper surface of the stage 500 . The upper surface may be parallel to a plane formed by the first direction D1 and a second direction perpendicular to the first direction D1 (see D2 in FIG. 3 ). At this time, the object to be irradiated 400 is disposed to face the laser optical system 300. When laser annealing the thin film transistor substrate, the object to be irradiated 400 may be an amorphous silicon layer formed on the substrate. .

The laser optical system 400 may move in one direction or in both directions perpendicular to each other, and as the laser optical system 400 moves, the laser light scans the entire surface of the target object 300. can However, the present invention is not limited thereto, and instead of the laser optical system 300, the stage 500 on which the object to be irradiated 400 is disposed may be moved in a direction opposite to the one direction described above, and the laser optical system 300 ) and the stage 500 may all be moved.

In this way, the laser device irradiates the target object 400 with the third laser beam L3 to crystallize amorphous silicon included in the target object 400 into poly-crystalline silicon. However, this will be described later with reference to FIG. 9 . Hereinafter, the laser optical system 200 for converting the first laser beam L1 emitted from the laser generator 100 into the second laser beam L2 will be described in more detail.

Figure 2 is a schematic explanatory diagram of the inversion module of the laser device of Figure 1; FIG. 3 is a perspective view illustrating a first prism and a second prism of the inversion module of the laser device of FIG. 2 . FIG. 4 is a detailed explanatory diagram of an inversion module of the laser device of FIG. 2 .

2 to 4, the inversion module 200 includes a first prism 210, a first prism driving unit 220, a second prism 230, a second prism driving unit 240 and a control unit 250. can include

The first prism 210 may include a first incident surface 211 , a first emission surface 212 and a first reflection surface 213 . The first incident surface 211 may be disposed on a plane perpendicular to the first direction D1. The first exit surface 212 may be disposed to form a first angle θ1 with the first incident surface 211 . The first reflection surface 213 may be disposed to form a second angle θ2 with the first incident surface 211 .

Here, the first angle θ1 may be an acute angle smaller than 90 degrees, and the second angle θ2 may be an obtuse angle larger than 90 degrees and smaller than 180 degrees.

The second prism 230 may include a second incident surface 231 , a second exit surface 232 and a second reflective surface 233 .

The second incident surface 231 may be disposed parallel to the first exit surface 212 of the first prism 210 . At this time, the first exit surface 212 and the second incident surface 231 are spaced apart from each other in the first direction D1, and the first prism driving unit 220 and the second prism driving unit 230 ), the distance between the first exit surface 212 and the second incident surface 231 can be adjusted.

The second exit surface 232 may be disposed parallel to the first incident surface 211 of the first prism 210 .

The second reflection surface 233 may include a first inclined surface 233a and a second inclined surface 233b. The first inclined surface 233a and the second inclined surface 233b may be disposed to form a fourth angle θ4. The fourth angle θ4 may be an angle smaller than 180 degrees. A corner 234 may be formed when the first inclined surface 233a and the second inclined surface 233b meet. The edge 234 may be disposed to form a third angle θ3 with the second incident surface 231 . Here, the third angle θ3 may be an acute angle smaller than 90 degrees.

The first prism driver 220 may be connected to the first prism 210 to move the position of the first prism 210 in the first direction D1. The second prism driver 240 may be connected to the second prism 230 to move the position of the second prism 230 in the first direction D1.

The control unit 250 may control the first and second prism driving units 220 and 240 . The control unit 250 drives the first and second prism driving units 220 and 240 to align the positions of the first and second prisms 210 and 220, and the first prism ( 210) and the second incident surface 231 of the second prism 230 may be adjusted to adjust the ratio between the reflected laser beam and the transmitted laser beam. .

Although not shown in detail, the first prism driving unit 220 and the second prism driving unit 240 may have various shapes. For example, the first prism driving unit 220 and the second prism driving unit 240 may include actuators. The actuator performs an operation of moving the first prism 210 or the second prism 230 in a predetermined direction according to the input electrical signal. Although the actuator has been described as being automatically controlled by the control unit 250, it may be controlled by the user by turning on/off the switch. Meanwhile, the actuator may be driven in various ways, and a linear actuator driven by a rotary motor may be simply exemplified.

Meanwhile, in this embodiment, the inversion module is described as including first and second prism driving units 220 and 240 capable of moving the positions of the first prism 210 and the second prism 230, respectively. but is not limited thereto. That is, any configuration can adjust the distance between the first prism 210 and the second prism 230 in the first direction D1. For example, the driving unit and the control unit may be configured such that one of the first and second prisms 210 and 230 is fixed and the other one is movable along the first direction D1.

Referring back to FIG. 2, an optical path in which the first laser beam L1 sequentially passes through the first and second prisms 210 and 230 and is converted into the second laser beam L2 is shown. .

Referring back to FIG. 3 , a shape in which a laser beam passing through the first and second prisms 210 and 230 of the inversion module 200 is inverted symmetrically to the origin is schematically illustrated.

Referring back to FIGS. 2 to 4 , the first laser beam L1 incident on the first incident surface 211 of the first prism 210 of the inversion module 220 is ) and reaches the first exit surface 212 through the inside. A portion of the first emission surface 212 is reflected and proceeds to the first reflection surface 213 as a reflected laser beam, and a portion passes through the first emission surface 212 to form a transmitted laser beam as the second prism. Proceed to the second incident surface 231 of (230).

At this time, the ratio of the transmission laser beam and the reflected laser beam transmitted and reflected from the first exit surface 212 varies depending on the distance between the first exit surface 212 and the second incident surface 221. 4 shows a case in which the transmission laser beam and the reflection laser beam are divided by 50%:50%. The ratio can be variably changed as needed.

The reflected laser beam reaching the first reflection surface 213 is reflected from the first reflection surface 213 and passes through the first emission surface 212 to the second incident surface of the second prism 230. (231). The reflected laser beam incident to the second incident surface 231 is reflected from the second exit surface 232 and proceeds to the second reflection surface 233 . The reflected laser beam reaching the second reflection surface 233 is reflected from the second reflection surface 233 and proceeds to the second incident surface 231 . The reflected laser beam reaching the second incident surface 231 again is reflected from the inside of the second incident surface 231 and emitted through the second exit surface 232 .

At this time, the transmission laser beam is incident into the second prism 230 through the second incident surface 231 and proceeds to the second exit surface 232 . The transmission laser beam reaching the second exit surface 232 passes through the second exit surface 232 and is mixed with the reflected laser beam emitted through the second exit surface 232, 2 Make a laser beam (L2).

At this time, the first laser beam (L1) and the second laser beam (L2) are positioned on the same straight line, and accordingly, alignment of the laser beam of the laser device is facilitated.

Referring to FIG. 4 again, for convenience of description, green (G) is shown at the top left of the first laser beam (L1) before it is incident on the first prism 210, yellow (Y) is shown at the top right, and yellow (Y) is shown at the bottom left. It is assumed that blue (B) is placed in the bottom right corner and red (R) is placed in

The transmission laser beam emitted from the second prism 230 may have the same color distribution as that of the first laser beam L1 before being incident on the first prism 210 . That is, in the transmitted laser beam, green (G) is disposed at the upper left, yellow (Y) is disposed at the upper right, blue (B) is disposed at the lower left, and red (R) is disposed at the lower right.

On the other hand, the reflected laser beam emitted from the second prism 230 may be reversed horizontally and vertically. That is, while the reflected laser beam is reflected from the second reflection surface 233 and the second incident surface 231, the left and right and up and down may be reversed. That is, the reflected laser beam is red (R) at the upper left, blue (B) at the upper right, yellow (Y) at the lower left, and green (G) at the lower right.

Accordingly, since the transmission laser beam and the reflected laser beam in which the transmission laser beam is inverted symmetrically are mixed, even when the energy distribution of the first laser beam L1 is not uniform, the second laser beam ( The energy distribution of L2) can be homogenized to have a symmetrical normal distribution.

That is, the reflected laser beam is inverted in a major axis direction (X) and simultaneously reversed in a minor axis direction (Y) compared to the transmission laser beam. For example, when the incident laser beam has a high energy density in the upper right corner, the transmission laser beam has the same energy density in the upper right corner as the incident laser beam, and the reflected laser beam has a relatively higher energy density in the lower left corner. it goes high Accordingly, the emitted laser beam obtained by mixing the transmission laser beam and the reflected laser beam has a normal distribution with a symmetrical energy distribution due to high energy density at the central portion.

According to the present embodiment, the inverting module of the laser device may configure an origin inverting module through a simple structure using first and second prisms, and a ratio of a non-inverted transmission laser beam to an inverted reflected laser beam. It can be easily adjusted by adjusting the distance between the first and second prisms.

5 is a schematic diagram of a laser device according to an embodiment of the present invention. 6 is a schematic explanatory diagram of an inversion module of the laser device of FIG. 5; 7 is a perspective view showing a prism of an inversion module of the laser device of FIG. 5; FIG. 8 is a detailed explanatory diagram of an inversion module of the laser device of FIG. 5 .

5 to 8, the laser device includes a laser generator 100, an inversion module 600 and a laser optical system 300. The laser generator 100 generates laser light and radiates the laser light to the outside of the laser generator 100 . The first laser beam L1 emitted from the laser generator 100 in a first direction D1 passes through the reversal module 200 and becomes a second laser beam L2 traveling in a third direction D3. processed The third direction D3 may be perpendicular to the first direction D1. The second laser beam L2 passes through the laser optical system 300 and is converted into a third laser beam L3, which is an output light traveling in the third direction D3, and the third laser beam L3 is the laser beam L3. The light is irradiated toward the irradiated object 400 disposed on the stage 500 spaced apart from the optical system 300 in the third direction D3.

The laser generator 100, the stage 500, and the object to be irradiated 400 may have substantially the same configurations as those of the laser device of FIG. 1 . In addition, except for the fact that the second laser beam L2 incident to the laser optical system 300 is incident in the first direction D1, the laser optical system 300 is the laser beam of the laser device of FIG. It may be substantially the same as the optical system, so repeated descriptions are omitted.

The inversion module 600 may include a splitter 610 , a mirror 620 , and a prism 630 .

The splitter 610 reflects a portion of the incident first laser beam L1 to create a reflected laser beam, and transmits a portion to create a transmission laser beam. For example, the splitter 610 reflects 50% of the incident first laser beam L1 to create a reflected laser beam and transmits the remaining 50% of the incident laser beam L1 to create a transmission laser beam. can

The mirror 620 may reflect the transmission laser beam passing through the splitter 610 so that the transmission laser beam travels to the prism 630 .

The prism 630 may include an incident surface 631 and a reflective surface 632 . The reflective surface 632 may include a first inclined surface 632a and a second inclined surface 632b. The first inclined surface 632a and the second inclined surface 632b may be disposed to form a fifth angle θ5 on cross sections formed along the first and third directions D1 and D3. A corner 633 may be formed when the first inclined surface 632a and the second inclined surface 632b meet. Here, the fifth angle θ5 may be less than 180 degrees.

The transmission laser beam reflected by the mirror 630 is incident through the incident surface 631 of the prism 630, reflected by the reflective surface 632, and then passed through the incident surface 631 again. is released The transmission laser beam emitted through the incident surface 631 passes through the splitter 610 and is mixed with the reflection laser beam to form the second laser beam L2.

At this time, the first laser beam (L1) and the second laser beam (L2) may be perpendicular to each other.

Referring to FIG. 8 again, for convenience of description, green (G) is shown at the top left of the first laser beam (L1) before entering the splitter 610, yellow (Y) is shown at the top right, and blue is shown at the bottom left. (B), it is assumed that red (R) is placed in the lower right corner

The reflected laser beam emitted from the splitter 610 may be vertically inverted with respect to the first laser beam L1 before entering the splitter 610 . That is, the reflected laser beam is blue (B) at the upper left, red (R) at the upper right, green (G) at the lower left, and yellow (Y) at the lower right.

On the other hand, the transmission laser beam transmitted through the splitter 610 and emitted through the mirror 620 and the prism 630 may be left and right reversed. That is, in the transmitted laser beam, yellow (Y) is disposed at the upper left, green (G) is disposed at the upper right, red (R) is disposed at the lower left, and blue (B) is disposed at the lower right.

Accordingly, since the vertically inverted reflection laser beam and the horizontally inverted transmission laser beam are mixed, even when the energy distribution of the first laser beam L1 is not uniform, the energy of the second laser beam L2 The distribution can be equalized to have a symmetric normal distribution.

According to embodiments of the present invention, the laser device includes a laser generator for generating a first laser beam, and an inversion module for converting the first laser beam and emitting a second laser beam. The inversion module includes a first prism including a first incident surface, a first exit surface, and a first reflection surface, a second incident surface parallel to the first exit surface, and a second exit surface parallel to the first incident surface. and a second prism including a second reflective surface. Accordingly, the inversion module of the laser device may constitute an origin inversion module through a simple structure using the first and second prisms. Therefore, light efficiency can be improved.

In addition, a ratio between a reflected laser beam and a transmitted laser beam may be adjusted by adjusting a distance between the first exit surface of the first prism and the second incident surface of the second prism.

In addition, the first laser beam and the second laser beam are positioned on the same straight line, and accordingly, alignment of the laser beam of the laser device is facilitated.

According to another embodiment, the laser device includes a laser generator for generating a first laser beam, and an inversion module for converting the first laser beam and emitting a second laser beam. The inversion module includes a splitter that reflects a portion of the first laser beam to form a reflected laser beam and transmits a portion of the first laser beam to form a transmission laser beam, a mirror that reflects the transmission laser beam transmitted through the splitter, and the mirror and a prism for reflecting the transmitted laser beam reflected from the splitter toward the splitter. Therefore, the inverting module of the laser device can be configured with a simple structure using one splitter, one mirror, and one prism. Therefore, light efficiency can be improved.

9 is a cross-sectional view schematically showing the structure of a thin film transistor manufactured using a laser device according to embodiments of the present invention and a display device including the same.

Referring to FIG. 9 , a buffer layer 31 may be formed on the substrate 20 to prevent diffusion of impurity ions and penetration of moisture or air, and to provide a planarized surface. In this case, the substrate 20 may be an insulating substrate made of glass, plastic, or the like. The buffer layer 31 may contain an inorganic insulating material such as silicon oxide or silicon nitride, and/or an organic insulating material such as polyimide, polyester, or acryl. Since the buffer layer 31 is not an essential component, it may be omitted depending on process conditions.

A semiconductor layer 40 made of polysilicon is formed on the buffer layer 31, including a channel region 43 and source and drain regions 41 and 42 formed on both sides of the channel region 43, respectively. there is. Here, the source and drain regions 41 and 42 are doped with n-type or p-type impurities and may include a silicide layer. Hereinafter, a method of forming the semiconductor layer 40 will be described in more detail.

An amorphous silicon thin film is formed by depositing amorphous silicon on the substrate 20 by low pressure chemical vapor deposition, plasma chemical vapor deposition, or sputtering. The silicon can be divided into amorphous silicon and polycrystalline silicon depending on the crystal state. The amorphous silicon has the advantage of being able to be deposited as a thin film at a relatively low temperature, but has relatively poor electrical characteristics and is difficult to apply to a large area because there is no regular atomic arrangement. There are downsides. However, the polycrystalline silicon has an excellent current flow rate compared to amorphous silicon, and in particular, electrical characteristics are improved as the grain size increases. At this time, when an insulating substrate 20 such as glass having a low melting point is used, an amorphous silicon thin film is deposited on the substrate 20 and then converted into a polycrystalline silicon thin film for use. The crystallinity of the deposited silicon thin film ( In order to improve crystallinity, a heat treatment process by laser annealing is usually accompanied.

In the laser annealing process, the transmission lens is initially preheated using a laser device, and then the amorphous silicon thin film is irradiated with laser light only when the transmission lens reaches a certain temperature and maintains a constant temperature. is crystallized into a polycrystalline silicon thin film. As a result, the crystal grains of the polycrystalline silicon thin film can be uniformly formed, and thus the properties of the thin film transistor (TFT) to be completed later can also be maintained uniformly.

Meanwhile, a gate insulating film 32 made of silicon oxide (SiO2) or silicon nitride (SiNx) covering the semiconductor layer 40 is formed on the upper part of the substrate 20, and the upper part of the gate insulating film 32 is formed. A gate electrode 50 is formed to correspond to the channel region 43 . An interlayer insulating film 33 covering the gate electrode 50 is formed on top of the gate insulating film 32, and the gate insulating film 32 and the interlayer insulating film 33 are the source of the semiconductor layer 40. and contact holes C1 and C2 exposing the drain regions 41 and 42 . An upper portion of the interlayer insulating film 33 faces the source electrode 61 with the source electrode 61 connected to the source region 41 through the contact hole C1 and the gate electrode 50 as the center. and a drain electrode 62 connected to the drain region 42 through the contact hole C2 is formed. The interlayer insulating film 33 is covered with a protective film 34. The protective film 34 may be made of an inorganic insulating material including oxide, nitride, and/or oxynitride, or an organic insulating material. A contact hole C3 exposing the source electrode 61 is formed in the passivation layer 34, and a pixel electrode 70 is formed on the passivation layer 34 to pass through the contact hole C3. It is connected to the source electrode 61. Here, the pixel electrode 70 may be formed to be connected to the drain electrode 62 instead of the source electrode 61 . The pixel electrode 70 may be a transparent electrode or a reflective electrode. When the pixel electrode 70 is used as a transparent electrode, it may include ITO, IZO, ZnO, or In2O3. In addition, when the pixel electrode 70 is used as a reflective electrode, a first layer made of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and compounds thereof, and the first layer Formed on top and may be formed in a multi-layer structure including a second layer including ITO, IZO, ZnO or In2O3.

Although not shown, a common electrode (not shown) that may be a transparent electrode or a reflective electrode and an intermediate layer (not shown) including an organic emission layer are formed on the pixel electrode 70 . In addition, a pixel defining layer (not shown) defining a pixel by exposing a portion of the common electrode may be disposed on the passivation layer 34 .

Meanwhile, the structure of the thin film transistor (TFT) shown in FIG. 9 and the display device (P) including the same is merely an example, and may be modified in various ways according to design.

An organic light emitting display device and various electronic devices including the same can be manufactured using the laser device of the present invention. For example, the present invention can be applied to manufacture mobile phones, smart phones, video phones, smart pads, smart watches, tablet PCs, car navigation systems, televisions, computer monitors, notebooks, head mounted displays, and the like.

Although the above has been described with reference to exemplary embodiments of the present invention, those skilled in the art can make various modifications to the present invention within the scope not departing from the spirit and scope of the present invention described in the claims below. It will be understood that it can be modified and changed accordingly.

100: laser generator 200, 600: inversion module
210: first prism 220: first prism driving unit
230: second prism 240: second prism driving unit
250: control unit 300: laser optical system
400: irradiated object 500: stage

Claims (12)

a laser generator generating a first laser beam; and
Including a reversal module for converting the first laser beam to emit a second laser beam,
The inversion module
a first prism including a first incident surface, a first emission surface, and a first reflection surface; and
A second prism including a second incident surface parallel to the first exit surface, a second exit surface parallel to the first incident surface, and a second reflection surface;
The first laser beam sequentially passes through the first prism and the second prism along different optical paths to form a transmission laser beam and a reflection laser beam, and the transmission laser beam and the reflection laser beam are mixed to form the first laser beam. 2 A laser device that forms a laser beam. According to claim 1,
The laser device, characterized in that the transmission laser beam and the reflected laser beam form an origin inversion with each other. According to claim 1,
The laser device, characterized in that the first laser beam and the second laser beam are located on the same straight line. According to claim 1,
The first laser beam is incident on the first incident surface of the first prism;
The first exit surface reflects a portion of the laser beam incident through the first incident surface to form the reflected laser beam, and transmits a portion to form the transmitted laser beam;
The first reflective surface reflects the reflective laser beam;
The transmission laser beam and the reflected laser beam reflected from the first reflection surface are incident on the second incident surface of the second prism;
The second exit surface transmits the transmission laser beam and reflects the reflection laser beam;
The second reflection surface reflects the reflected laser beam reflected from the second exit surface;
The laser device of claim 1 , wherein the reflected laser beam reflected from the second reflection surface is reflected from the second incident surface and then emitted through the second exit surface. According to claim 4,
The first exit surface of the first prism is disposed to form a first angle with the first incident surface, and the first reflection surface is disposed to form a second angle with the first incident surface;
The first angle is an acute angle of less than 90 degrees, and the second angle is an obtuse angle of greater than 90 degrees and less than 180 degrees. According to claim 4,
The second reflection surface includes a first inclined surface and a second inclined surface,
The first inclined surface and the second inclined surface meet to form a corner,
The corner is disposed to form a third angle with the second incident surface,
The first inclined surface and the second inclined surface are arranged to form a fourth angle with each other, characterized in that the laser device. According to claim 6,
The third angle is an acute angle smaller than 90 degrees, and the fourth angle is a laser device, characterized in that smaller than 180 degrees. According to claim 1,
The laser device, characterized in that the first prism and the second prism are spaced apart from each other. According to claim 8,
The laser device further comprises a moving unit for adjusting the distance between the first prism and the second prism. delete delete delete

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