CN104270888A - High-density package substrate on-hole disk product and preparation method thereof - Google Patents
High-density package substrate on-hole disk product and preparation method thereof Download PDFInfo
- Publication number
- CN104270888A CN104270888A CN201410512534.2A CN201410512534A CN104270888A CN 104270888 A CN104270888 A CN 104270888A CN 201410512534 A CN201410512534 A CN 201410512534A CN 104270888 A CN104270888 A CN 104270888A
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- copper
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- thin copper
- coppering
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
- H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
- H05K1/113—Via provided in pad; Pad over filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
Abstract
The invention discloses a high-density package substrate on-hole disk product and a preparation method of the high-density package substrate on-hole disk product. The preparation method comprises the following steps of drying a substrate, manufacturing locating holes, conducting laser drilling, conducting micro-etching, conducting copper plating, conducting pattern transfer, conducting electroplating for hole filling and conducting film stripping and etching, and then the high-density package substrate on-hole disk product is obtained. According to the method, under the effect of protective film layers of the thin copper substrate, the problem that copper foil at the bottom is cut through in the thin copper processing process in the past is solved, and a complete half-through hole structure is made on the thin copper substrate; meanwhile, the direct laser processing technology is adopted, the thickness of the copper foil can not be influenced, and through good matching between the direct laser processing technology and the MSAP process, a high-density Flip-chip product with the high-flatness on-hole disk structure can be manufactured.
Description
Technical field
The present invention relates to printed wiring board manufacture technology field, particularly relate in a kind of high-density packages substrate aperture and coil product and preparation method thereof.
Background technology
As the carrier of semiconductor chip, one of major function of base plate for packaging is the excessive structural between chip and wiring board.For adapting to more high-density packages requirement, the encapsulating products of ultra-thin Flip-chip structure has caused broad interest in the industry and has in recent years been developed rapidly.Compared with traditional Wire-bonding structure, the feature of Flip-chip construction packages substrate is that tie point becomes planar array distribution from circumferential distribution, also becomes small size tin ball from traditional gold/copper cash with chip connected mode.The technology that this array EDS maps tin ball is directly connected with chip is very high to the flatness requirement of base plate for packaging, also proposes much new challenge to the manufacture craft of base plate for packaging, and wherein very crucial one is exactly the making of high-flatness solder side.
Kong Shangpan structure uses in a large number because of its low-down via position accounting advantage in higher interconnected product.And the Kong Shangpan structure used in the industry is at present mostly based on consent or plating process for filling hole, wherein jack process need use mechanical lapping, is difficult to corresponding thickness 0.1mm and following product; Though plating process for filling hole may correspond to thin plate processing, but its interlayer conduction structure is by the restriction of MSAP (improveing half addition) processing procedure, double-layer product is only limitted to through-hole structure usually, when electroplating filling inevitably there is depression or protruding in aperture, is also difficult to the requirement meeting solder side high-flatness.
Blind via bottom planarization, by the impact of pore structure, replaces through hole as used half through blind hole and carries out plating and fill, be expected to solution pad planarization problem.But the thin copper base that MSAP processing procedure uses bottom Copper Foil in the course of processing is very easily through, is difficult to ensure evenness, and possesses through hole and more easily cause poor plating, affect product reliability.
Summary of the invention
Based on this, the object of this invention is to provide the preparation method of a kind of high-density packages substrate aperture being coiled product.
Concrete technical scheme is as follows:
High-density packages substrate aperture is coiled a preparation method for product, comprise the steps:
Drying-plate: thin copper base is toasted, the thickness of described thin copper base is≤0.1mm, and the copper foil surface of described thin copper base has covered protective film;
Drying-plate operation can improve the dimensional stability of product.
Make location hole: make at least one group of positioning through hole in the non-functional area of described thin copper base;
Laser drill: the protective film removing described thin copper base side, expose laser processing area, adopt laser to carry out drilling operation, form half through hole, the degree of depth of described half through hole is the summation of the thickness of the Copper Foil of thin copper base side and the thickness of thin copper base dielectric layer;
Because copper face laser reflection is very capable, before usual carbon dioxide laser processing, need roughening treatment copper face being carried out to 1-2 μm, to improve the absorptance of copper face.But because substrate itself is thin copper, be difficult to carry out effective alligatoring, thus the present invention controls microetch amount is between 0.5-1 μm, short-pulse laser parameter is then used to make concentration of energy to remove surperficial Copper Foil.In addition, for the integrality avoiding too high energy to damage end copper, the energy of machining laser is 1.5-15 MJ, the pulse width control of laser is at 5-12 μ s, control impuls number of times is 3-8 time, laser energy can be made as far as possible successively to eliminate Copper Foil and resin fast, and be unlikely to local overheating and cause end copper loss wound;
Microetch: the thin copper base after laser drill is carried out etching operation, controlling microetch amount is 0.5-1 μm;
Control suitable microetch amount, namely eliminate the remaining copper in aperture, avoid end copper over etching simultaneously; Can also carry out except glue operation after microetching step, resin in cleaning leveling hole, removes foreign material at the bottom of hole, improves the conduction in hole;
Heavy copper: the protective film removing described thin copper base opposite side, then carries out full plate and sinks copper operation;
Graphic transitions: the wiring board after copper that sunk by full plate carries out subsides dry film, exposure imaging operation, exposes plating area and described half through hole;
Plating filling perforation: the wiring board after Graphic transitions is carried out electro-coppering operation, makes to fill up copper in described half through hole;
Move back film etching: the wiring board after carrying out electro-coppering operation is carried out moving back film, etching operation, and then carry out rear operation (described rear operation can comprise welding resistance make, surface-treated operation) make and obtain in described high-density packages substrate aperture and coil product.
Wherein in an embodiment, the copper thickness of described thin copper base is 2-4 μm, and the thickness of described protective film is 18-35 μm.
Wherein in an embodiment, the technological parameter of described baking is: under 150-190 DEG C of condition, toast 2-4h.
Wherein in an embodiment, in described laser drill step, the energy of the laser of employing is 1.5-15 MJ, and the pulse width control of laser is at 5-12 μ s, control impuls number of times is 3-8 time, and described drilling operation also comprises roughening treatment copper face being carried out to 0.5-1 μm.
Wherein in an embodiment, in described laser drill step, the openend aperture of described half through hole is with bottom part aperture diameter than being 1:0.6-0.8, and openend aperture and hole depth are than being 1:0.3-1.
Wherein in an embodiment, in described heavy copper step, full plate sink the copper of copper thick be 0.5-1 μm.
Wherein in an embodiment, in described electro-coppering step, the current density of electro-coppering is 3-20ASF (ampere/square feet), and current time is 30-120min, and the copper of electro-coppering is thick is 5-25 μm.
Wherein in an embodiment, in described electro-coppering step, the current density of electro-coppering is 3-12ASF, and current time is 80-120min, and the copper of electro-coppering is thick is 5-15 μm.
Another object of the present invention is to provide in a kind of high-density packages substrate aperture and coils product.
Concrete technical scheme is as follows:
The high-density packages substrate aperture that above-mentioned preparation method prepares coils product.
Beneficial effect of the present invention is as follows:
The present invention uses a kind of thin copper base with protective film; adopt the mode removing protective layer in batches; optimize laser processing flow process; define half complete through hole structure; after plating is filled, realize interlayer more interconnected, the very smooth Kong Shangpan infrastructure product of solder side can be produced according to normal MSAP.
The present invention utilizes the effect of thin copper base protective film cleverly, and the impact to the end copper when on the one hand protective film can keep out pore-forming, plays certain strength support effect, on the other hand also can in time by heat unnecessary for bottom to surrounding transmission.Thus instant invention overcomes Copper Foil through problem in bottom in thin Copper fabrication process in the past, thin copper base is produced half complete through hole structure; This technology utilizes Direct Laser process technology simultaneously, does not affect copper thickness, well mates with MSAP technique, can produce the high density Flip-chip product having and high-flatness hole is coiled structure.
Accompanying drawing explanation
The board structure schematic diagram that Fig. 1 uses for the embodiment of the present invention;
Fig. 2 is the structural representation of the wiring board obtained after embodiment of the present invention laser drill;
Fig. 3 is that the full plate of the embodiment of the present invention sinks the structural representation of wiring board obtained after copper operation;
Fig. 4 is the structural representation of the wiring board obtained after the operation of embodiment of the present invention Graphic transitions;
Fig. 5 is the structural representation of the wiring board obtained after embodiment of the present invention electro-coppering operation;
Fig. 6 is the structural representation of the wiring board obtained after the embodiment of the present invention moves back membrane operations;
Fig. 7 is the structural representation of the wiring board obtained after embodiment of the present invention etching operation;
Fig. 8 is the product structure schematic diagram after the present invention after operation making;
Fig. 9 is the product schematic diagram that existing via-hole fabrication process obtains.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the application is further elaborated.
With reference to figure 1-7, a kind of high-density packages substrate aperture is coiled the preparation method of product, comprise the steps:
------------------except glue,------MSAP flow process---electroplates filling perforation---rear operation that MSAP moves back film---MSAP etching---to heavy chemical copper to microetch to laser drill to sawing sheet-drying-plate to remove lower surface protective layer to remove upper surface protective layer to make location hole.
Wherein the baseplate material of sawing sheet use as shown in Figure 1 (thin copper base comprises dielectric layer 101, Copper Foil 102 and protective film 103).Different from traditional copper-clad base plate material, the thickness of this substrate is 0.1mm, and the outside of its Copper Foil (thickness is 2-4 μm) is about the protection Copper Foil of 18-35 μm with a layer thickness.Be connected by very thin binding agent between protective layer with Copper Foil, mechanical system can be utilized it to be separated with substrate.Binding agent is very easily removed by except glue liquid medicine, can not remain at substrate surface.
Thin copper base material makes the requisite raw material of fine-line, and usual copper is thick thinner, and it is higher that its circuit makes ability, may correspond to the base plate for packaging of higher wiring density.But due to the thickness only 2-4 μm of Copper Foil, very easily run through in drilling operation.
Drying-plate: thin copper base is toasted 2-4h under 150-190 DEG C of condition; Drying-plate operation can improve the dimensional stability of product.
Make location hole: make at least one group of positioning through hole in the non-functional area of described thin copper base; Often organize the mechanical through hole that positioning through hole is 0.5-3.5mm by least four apertures to form.The marginal portion of described non-functional area and base plate for packaging or plate face are without visuals, positioning through hole is made in base plate for packaging non-functional area, reduce positioning through hole to greatest extent to the impact encapsulating basic circuit and function, and the mechanical through hole of straight type can reduce the impact of positioning target position deviation on positive and negative Aligning degree, can obtain locating effect more accurately.
Laser drill: the protective film removing described thin copper base side (removes upper surface protective layer operation and with uniform speed from side or one jiao, need prevent substrate damage.In addition, because substrate is thin, dissymmetrical structure being formed after removing upper surface copper foil and be easy to warpage, for avoiding producing warpage, toasting half an hour more than with steel plate pressing plate, substrate is made to recover smooth), expose laser processing area, adopt laser to carry out drilling operation, form half through hole 107 (as shown in Figure 2), the degree of depth of described half through hole is the summation of the thickness of Copper Foil and the thickness of thin copper base dielectric layer, retains the Copper Foil of opposite side;
Because copper face laser reflection is very capable, before usual carbon dioxide laser processing, need roughening treatment copper face being carried out to 1-2 μm, to improve the absorptance of copper face.But because substrate itself is thin copper, general control microetch amount is 0.5-1 μm, the superlaser of short pulse is then used to process.In addition, for the integrality avoiding too high energy to damage end copper, the energy of machining laser is 1.5-15 MJ, the pulse width control of laser is at 5-12 μ s, control impuls number of times is 3-8 time, laser energy can be made as far as possible successively to eliminate Copper Foil and resin fast, and be unlikely to local overheating and cause end copper loss wound.
Adopt effectiveness comparison that different laser parameter is holed as following table:
The aperture that experiment 1-3 is corresponding is respectively 60um, 80um, 100um.By increasing pulse number, reducing pulse duration, all can obtain good pore-forming effect.
Energy in experiment 4 is high, and a large amount of concentration of energy, in bottom, causes end copper to puncture;
Pulsewidth in experiment 5 is long, and energy spreads at upper surface, and central region energy is excessive, and neighboring area energy is too small, is thus difficult to the complete pass of formation, penetrates, resin residue depositing.
The openend aperture of described half through hole is with bottom part aperture diameter than being 1:0.6-0.8, and openend aperture and hole depth are than being 1:05-1.
Microetch: controlling microetch amount is 0.5-1 μm;
Control suitable microetch amount, namely eliminate the remaining copper in aperture, avoid end copper over etching simultaneously; Can also carry out except glue operation after microetching step, resin in cleaning leveling hole, removes foreign material at the bottom of hole, improves the conduction in hole;
Heavy copper: the protective film removing described thin copper base opposite side, then carries out full plate and sinks copper operation (as shown in Figure 3), full plate sink the copper of heavy layers of copper 104 that copper obtains thick be 0.5-1 μm;
Graphic transitions: the wiring board after copper that sunk by full plate carries out subsides dry film 105, exposure imaging operation, exposes plating area and described half through hole (as shown in Figure 4);
Plating filling perforation: the wiring board after Graphic transitions is carried out electro-coppering operation, make to fill up copper 106 (as shown in Figure 5 in described half through hole, the situation of filling perforation shown in figure is situation ideally, the copper face that in actual production, the peristome of half through hole is filled can not be completely smooth), the current density of electro-coppering is 3-20ASF (ampere/square feet), current time is 30-120min, and the copper of electro-coppering is thick is 5-25 μm;
Need in this step well to control the technological parameter of electro-coppering, to ensure the effect of filling perforation:
| Experiment sequence number | Current density | Current time | Copper is thick | Evenness |
| 1 | 10.5 | 120 | 15 | High |
| 2 | 3 | 120 | 5 | High |
| 3 | 20 | 75 | 25 | Generally |
| 4 | 25 | 75 | 30 | Generally |
Experiment 1 and 2 uses low current density (3-12ASF), and the long electrical wave time (80-120min) processes, its surface smoothness better effects if (copper obtained is thick is 2-15 μm).Experiment 3 and 4 mesopore stomatodeums fall into obviously, but also meet 5 μm of specification requirements.
Move back film etching: the wiring board after carrying out electro-coppering operation is carried out moving back film (as shown in Figure 6), etching operation (as shown in Figure 7), and then carry out rear operation (described rear operation can comprise welding resistance make, surface-treated operation) make and obtain in described high-density packages substrate aperture and coil product.
Fig. 8 is the product schematic diagram after rear operation makes, the position wherein marked 4. is the copper face that the peristome of half through hole is filled, in actual production, this copper face can not be completely smooth, but 2. volume is comparatively large for the tin ball of filling due to rear operation, and the out-of-flatness that copper face is trickle can not affect the tin ball height of space of a whole page entirety; The position wherein marked 3. is copper face corresponding bottom half through hole, the copper face of this position owing to not having the Copper Foil of through substrate in the operation of boring, make copper face can keep smooth all the time, when the tin ball that rear operation is filled 1. small volume also can ensure that the height of each tin ball is consistent, obtain the solder side of high-flatness, ensure the electric property of whole product.
As shown in Figure 9, wherein the depression meeting absorption portion tin cream on through hole top, causes tin ball insufficient height to the product schematic diagram adopting existing via-hole fabrication process to obtain, cannot normal weld.
The present invention uses a kind of thin copper base with protective film; adopt the mode removing protective layer in batches; optimize laser processing flow process; define half complete through hole structure; after plating is filled, realize interlayer more interconnected, the very smooth Kong Shangpan infrastructure product of solder side can be produced according to normal MSAP.
The present invention utilizes the effect of thin copper base protective film cleverly, overcomes Copper Foil through problem in bottom in thin Copper fabrication process in the past, thin copper base is produced half complete through hole structure; This technology utilizes Direct Laser process technology simultaneously, does not affect copper thickness, well mates with MSAP technique, can produce the high density Flip-chip product having and high-flatness hole is coiled structure.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. high-density packages substrate aperture is coiled a preparation method for product, it is characterized in that, comprise the steps:
Drying-plate: thin copper base is toasted, the thickness of described thin copper base is≤0.1mm, and the copper foil surface of described thin copper base has covered protective film;
Make location hole: make at least one group of positioning through hole in the non-functional area of described thin copper base;
Laser drill: the protective film removing described thin copper base side, expose laser processing area, adopt laser to carry out drilling operation, form half through hole, the degree of depth of described half through hole is the summation of the thickness of the Copper Foil of thin copper base side and the thickness of thin copper base dielectric layer;
Microetch: the thin copper base after laser drill is carried out etching operation;
Heavy copper: the protective film removing described thin copper base opposite side, then carries out full plate and sinks copper operation;
Graphic transitions: the wiring board after copper that sunk by full plate carries out subsides dry film, exposure imaging operation, exposes plating area and described half through hole;
Plating filling perforation: the wiring board after Graphic transitions is carried out electro-coppering operation, makes to fill up copper in described half through hole;
Move back film etching: carried out moving back film, etching operation by the wiring board after carrying out electro-coppering operation, and then carry out rear operation making and namely obtain in described high-density packages substrate aperture and coil product.
2. preparation method according to claim 1, is characterized in that, the copper thickness of described thin copper base is 2-4 μm, and the thickness of described protective film is 18-35 μm.
3. preparation method according to claim 1, is characterized in that, the technological parameter of described baking is: under 150-190 DEG C of condition, toast 2-4h.
4. preparation method according to claim 1, it is characterized in that, in described laser drill step, the energy of the laser adopted is 1.5-15 MJ, the pulse width control of laser is at 5-12 μ s, control impuls number of times is 3-8 time, and described drilling operation also comprises roughening treatment copper face being carried out to 0.5-1 μm.
5. preparation method according to claim 1, is characterized in that, in described laser drill step, the openend aperture of described half through hole is with bottom part aperture diameter than being 1:0.6-0.8, and openend aperture and hole depth are than being 1:0.3-1.
6. preparation method according to claim 1, is characterized in that, in described microetching step, controlling microetch amount is 0.5-1 μm.
7. preparation method according to claim 1, is characterized in that, in described heavy copper step, full plate sink the copper of copper thick be 0.5-1 μm.
8. preparation method according to claim 1, is characterized in that, in described electro-coppering step, the current density of electro-coppering is 3-20ASF, and current time is 30-120min, and the copper of electro-coppering is thick is 5-25 μm.
9. preparation method according to claim 8, is characterized in that, in described electro-coppering step, the current density of electro-coppering is 3-12ASF, and current time is 80-120min, and the copper of electro-coppering is thick is 5-15 μm.
10. the high-density packages substrate aperture that preparation method described in any one of claim 1-9 prepares coils product.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410512534.2A CN104270888B (en) | 2014-09-28 | 2014-09-28 | Disk product and preparation method thereof in high-density packages substrate aperture |
| PCT/CN2015/080246 WO2016045402A1 (en) | 2014-09-28 | 2015-05-29 | High-density package substrate on-hole disk product and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410512534.2A CN104270888B (en) | 2014-09-28 | 2014-09-28 | Disk product and preparation method thereof in high-density packages substrate aperture |
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| Publication Number | Publication Date |
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| CN104270888A true CN104270888A (en) | 2015-01-07 |
| CN104270888B CN104270888B (en) | 2017-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410512534.2A Active CN104270888B (en) | 2014-09-28 | 2014-09-28 | Disk product and preparation method thereof in high-density packages substrate aperture |
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| CN (1) | CN104270888B (en) |
| WO (1) | WO2016045402A1 (en) |
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| CN105451447A (en) * | 2015-10-22 | 2016-03-30 | 苏州市华扬电子有限公司 | Line alignment method during mobile phone cell panel manufacturing process |
| WO2016045402A1 (en) * | 2014-09-28 | 2016-03-31 | 广州兴森快捷电路科技有限公司 | High-density package substrate on-hole disk product and manufacturing method thereof |
| CN109219251A (en) * | 2018-08-30 | 2019-01-15 | 广合科技（广州）有限公司 | A kind of production method of flexible electric circuit board fine-line |
| CN109348651A (en) * | 2018-10-16 | 2019-02-15 | 欣强电子（清远）有限公司 | A kind of ELIC pcb board part position alignment of inner layer plates processing method |
| CN109511225A (en) * | 2018-09-25 | 2019-03-22 | 通元科技(惠州)有限公司 | A kind of semi-metal hole Wiring board processing method |
| CN114222445A (en) * | 2021-11-09 | 2022-03-22 | 深圳市景旺电子股份有限公司 | Circuit board manufacturing method and circuit board |
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| WO2016045402A1 (en) * | 2014-09-28 | 2016-03-31 | 广州兴森快捷电路科技有限公司 | High-density package substrate on-hole disk product and manufacturing method thereof |
| CN105451447A (en) * | 2015-10-22 | 2016-03-30 | 苏州市华扬电子有限公司 | Line alignment method during mobile phone cell panel manufacturing process |
| CN109219251A (en) * | 2018-08-30 | 2019-01-15 | 广合科技（广州）有限公司 | A kind of production method of flexible electric circuit board fine-line |
| CN109219251B (en) * | 2018-08-30 | 2020-11-13 | 广州广合科技股份有限公司 | Manufacturing method of fine circuit of flexible circuit board |
| CN109511225A (en) * | 2018-09-25 | 2019-03-22 | 通元科技(惠州)有限公司 | A kind of semi-metal hole Wiring board processing method |
| CN109348651A (en) * | 2018-10-16 | 2019-02-15 | 欣强电子（清远）有限公司 | A kind of ELIC pcb board part position alignment of inner layer plates processing method |
| CN114222445A (en) * | 2021-11-09 | 2022-03-22 | 深圳市景旺电子股份有限公司 | Circuit board manufacturing method and circuit board |
| CN114222445B (en) * | 2021-11-09 | 2023-07-14 | 深圳市景旺电子股份有限公司 | Circuit board manufacturing method and circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016045402A1 (en) | 2016-03-31 |
| CN104270888B (en) | 2017-10-17 |
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