CN104269350B - Cleaning process for large current high voltage silicon stack - Google Patents

Cleaning process for large current high voltage silicon stack Download PDF

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Publication number
CN104269350B
CN104269350B CN201410519539.8A CN201410519539A CN104269350B CN 104269350 B CN104269350 B CN 104269350B CN 201410519539 A CN201410519539 A CN 201410519539A CN 104269350 B CN104269350 B CN 104269350B
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cleaning
voltage silicon
high voltage
spilling water
stack
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CN104269350A (en
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黄丽凤
王志敏
张龙
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Rugao Dachang Electronics Co Ltd
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Rugao Dachang Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention relates to a cleaning process for a large current high voltage silicon stack. The cleaning process comprises the steps that a mechanical arm is used for stacking the high voltage silicon stack into an HF solution to be soaked, the high voltage stack is put into overflow water to be cleaned after being soaked by the HF solution; then the mechanical arm is used for putting the high voltage silicon stack into a KOH solution to be cleaned; the high voltage silicon stack after being soaked by the KOH solution is subjected to spraying processing, and the spraying time t2= 300s +/- 5s; the sprayed high voltage silicon stack is put into the overflow water to be cleaned; then the high voltage silicon stack is cleaned by EDTA-2Na ultrasound; the high voltage silicon stack after being cleaned by the EDTA-2Na ultrasound is cleaned by the overflow water; the high voltage silicon stack is subjected to acetone dehydration processing; at last, hot N2 is used for drying the high voltage silicon stack. The cleaning process for the large current high voltage silicon stack has the advantages that ditch cleaning is conducted on the welded large current high voltage silicon stack, impurities such as soldering fluid and water vapor attached to the surface of the high voltage silicon stack can be well removed, and the durability and the reliability of the large current high voltage silicon stack can be increased correspondingly.

Description

A kind of large-current high-voltage silicon stack cleaning
Technical field
The present invention relates to a kind of large-current high-voltage silicon stack cleaning.
Background technology
High voltage silicon rectifier stack is composed in series by many kenotrons (silicon grain), is, in high-voltage rectifying, exchange is become direct current Requisite original paper.Because high-voltage rectifying is that the screen assuming image in the way of cathode-ray scan (includes old-fashioned TV Machine, computer screen) in requisite part.There are a lot of manufacturer production high voltage silicon rectifier stacks.Voltage is from 1kv ~ 1000kv;Electric current from 1ma ~ 100a.
At present, in industry production, in the high voltage silicon rectifier stack of more than 350ma, large-current high-voltage silicon stack is referred to as electric current.Right In large-current high-voltage silicon stack during producing, have one welding sequence, and after welding sequence, in large-current high-voltage silicon Heap surface length can be attached with the impurity such as solder paste, dust, steam, if directly used such high voltage silicon rectifier stack as finished product, meeting The performances such as its durability, reliability are impacted, therefore works out a kind of large-current high-voltage silicon stack cleaning to remove it The impurity on surface is imperative.
Content of the invention
The technical problem to be solved in the present invention is to provide a kind of can be good at the impurity cleaning on high voltage silicon rectifier stack surface Large-current high-voltage silicon stack cleaning.
For solving above-mentioned technical problem, the technical scheme is that a kind of large-current high-voltage silicon stack cleaning, its wound New point is: described step is:
A) first, using mechanical arm, high voltage silicon rectifier stack is put in hf solution and soak, the time t of immersion1=84s±1s；
B) high voltage silicon rectifier stack after hf solution soaking is put into cleaning in spilling water；
C) and then, using mechanical arm, high voltage silicon rectifier stack is put in koh solution and is carried out；
D) high voltage silicon rectifier stack after koh solution soaking is carried out spray process, the time t of spray2=300s±5s；
E) high voltage silicon rectifier stack after spray is put into cleaning in spilling water；
F) again high voltage silicon rectifier stack is utilized edta-2na to be cleaned by ultrasonic, the time t of cleaning3=84s±1s；
G) high voltage silicon rectifier stack after edta-2na is cleaned by ultrasonic is carried out spilling water cleaning；
H) high voltage silicon rectifier stack is carried out acetone processed；
I) last, using hot n2High voltage silicon rectifier stack is dried up.
Further, the total twice matting of spilling water cleaning one in described step b, respectively one-level spilling water cleaning and two Level spilling water cleaning, wherein the time t of one-level spilling water cleaning4=300s ± 5s, the time t of two grades of spilling water cleanings5=300s±5s.
Further, the total two procedures of koh solution cleaning one in described step c, respectively first order koh solution cleaning And the cleaning of second level koh solution, the wherein time t of first order koh solution cleaning6=84s ± 1s, temperature t1=84 DEG C ± 4 DEG C, the The time t of two grades of koh solution cleanings7=84s ± 1s, temperature t2=84℃±4℃.
Further, the total twice matting of spilling water cleaning one in described step e, respectively the cleaning of one-level spilling water and Two grades of spilling water cleanings, wherein the time t of one-level spilling water cleaning8=300s ± 5s, the time t of two grades of spilling water cleanings9=300s±5s.
Further, the total twice matting of spilling water cleaning one in described step g, respectively the cleaning of one-level spilling water and Two grades of spilling water cleanings, wherein the time t of one-level spilling water cleaning10=300s ± 5s, the time t of two grades of spilling water cleanings11=300s± 5s.
Further, also have additional ultrasonic cleaning operation between described one-level spilling water cleaning and two grades of spilling water cleanings, ultrasonic The time t of cleaning12=300s±5s.
Further, the acetone processed one in described step h has two procedures, at respectively one grade acetone dehydration Reason and two grade acetone processed, the time t of wherein one grade acetone processed13=300s ± 5s, two grade acetone processed Time t14=300s±5s.
It is an advantage of the current invention that: using this technique, ditch cleaning is carried out to the large-current high-voltage silicon stack after welding, can be fine Removal be attached to the impurity such as the solder paste on high voltage silicon rectifier stack surface, steam, accordingly increase its durability and reliability.
Specific embodiment
The large-current high-voltage silicon stack cleaning of the present invention includes following step:
The first step, first, is put into high voltage silicon rectifier stack in hf solution using mechanical arm and soaks, the time t of immersion1=84s± 1s.
Second step, the high voltage silicon rectifier stack after hf solution soaking is put into cleaning in spilling water.
In this step, the total twice matting of spilling water cleaning one, the respectively cleaning of one-level spilling water and two grades of spilling waters are clear Wash, wherein the time t of one-level spilling water cleaning4=300s ± 5s, the time t of two grades of spilling water cleanings5=300s±5s.
3rd step, then, is put into high voltage silicon rectifier stack in koh solution using mechanical arm and is carried out.
In this step, the total two procedures of koh solution cleaning one, the respectively cleaning of first order koh solution and the second level Koh solution cleans, wherein the time t of first order koh solution cleaning6=84s ± 1s, temperature t1=84 DEG C ± 4 DEG C, second level koh is molten The time t of liquid cleaning7=84s ± 1s, temperature t2=84℃±4℃.
4th step, the high voltage silicon rectifier stack after koh solution soaking is carried out spray process, the time t of spray2=300s± 5s.
5th step, the high voltage silicon rectifier stack after spray is put into cleaning in spilling water.
In this step, the total twice matting of spilling water cleaning one, the respectively cleaning of one-level spilling water and two grades of spilling waters are clear Wash, wherein the time t of one-level spilling water cleaning8=300s ± 5s, the time t of two grades of spilling water cleanings9=300s±5s.
6th step, then high voltage silicon rectifier stack is utilized edta-2na to be cleaned by ultrasonic, the time t of cleaning3=84s±1s.
7th step, the high voltage silicon rectifier stack after edta-2na is cleaned by ultrasonic is carried out spilling water cleaning.
In this step, the total twice matting of spilling water cleaning one, the respectively cleaning of one-level spilling water and two grades of spilling waters are clear Wash, wherein the time t of one-level spilling water cleaning10=300s ± 5s, the time t of two grades of spilling water cleanings11=300s±5s.
Meanwhile, also have additional ultrasonic cleaning operation between one-level spilling water cleaning in this step and two grades of spilling water cleanings, The time t being cleaned by ultrasonic12=300s±5s.
8th step, high voltage silicon rectifier stack is carried out acetone processed.
In this step, acetone processed one has two procedures, respectively one grade acetone processed and two grade third Ketone processed, the time t of wherein one grade acetone processed13=300s ± 5s, the time t of two grade acetone processed14= 300s±5s.
9th step, finally, using hot n2High voltage silicon rectifier stack is dried up.
Table 1 be using the small current high voltage silicon rectifier stack cleaning of the present invention, high voltage silicon rectifier stack is carried out after tested Tables of data.Test environment is at 25 ± 5 DEG C in temperature, under the conditions of relative humidity≤60%, within placing more than 2 hours 24 hours Tested by testing electrical property condition afterwards.
Table 1
Can be evident that by the data in table 1, using the high voltage silicon rectifier stack after the cleaning of this technique in each performance side Face will excellent in the high voltage silicon rectifier stack without over cleaning, and all accorded with using the high voltage silicon rectifier stack items test data after the cleaning of this technique Close industry internal standard, and then do not reach industry standard without the high voltage silicon rectifier stack of over cleaning.
Ultimate principle and principal character and the advantages of the present invention of the present invention have been shown and described above.The technology of the industry , it should be appreciated that the present invention is not restricted to the described embodiments, the simply explanation described in above-described embodiment and description is originally for personnel The principle of invention, without departing from the spirit and scope of the present invention, the present invention also has various changes and modifications, these changes Change and improvement both falls within scope of the claimed invention.Claimed scope by appending claims and its Equivalent thereof.

Claims (7)

1. a kind of large-current high-voltage silicon stack cleaning method it is characterised in that: step is:
A) first, using mechanical arm, high voltage silicon rectifier stack is put in hf solution and soak, the time t of immersion1=84s±1s；
B) high voltage silicon rectifier stack after hf solution soaking is put into cleaning in spilling water；
C) and then, using mechanical arm, high voltage silicon rectifier stack is put in koh solution and is carried out；
D) high voltage silicon rectifier stack after koh solution soaking is carried out spray process, the time t of spray2=300s±5s；
E) high voltage silicon rectifier stack after spray is put into cleaning in spilling water；
F) again high voltage silicon rectifier stack is utilized edta-2na to be cleaned by ultrasonic, the time t of cleaning3=84s±1s；
G) high voltage silicon rectifier stack after edta-2na is cleaned by ultrasonic is carried out spilling water cleaning；
H) high voltage silicon rectifier stack is carried out acetone processed；
I) last, using hot n2High voltage silicon rectifier stack is dried up.
2. large-current high-voltage silicon stack cleaning method according to claim 1 it is characterised in that: in described step b, spilling water is clear Wash a total twice matting, the respectively cleaning of one-level spilling water and two grades of spilling water cleanings, the wherein time of one-level spilling water cleaning t4=300s ± 5s, the time t of two grades of spilling water cleanings5=300s±5s.
3. large-current high-voltage silicon stack cleaning method according to claim 1 it is characterised in that: koh solution in described step c The total two procedures of cleaning one, the respectively cleaning of first order koh solution and the cleaning of second level koh solution, wherein first order koh is molten The time t of liquid cleaning6=84s ± 1s, temperature t1=84 DEG C ± 4 DEG C, the time t of second level koh solution cleaning7=84s ± 1s, temperature t2=84℃±4℃.
4. large-current high-voltage silicon stack cleaning method according to claim 1 it is characterised in that: the spilling water in described step e The total twice matting of cleaning one, the respectively cleaning of one-level spilling water and two grades of spilling waters cleanings, the wherein cleaning of one-level spilling water when Between t8=300s ± 5s, the time t of two grades of spilling water cleanings9=300s±5s.
5. large-current high-voltage silicon stack cleaning method according to claim 1 it is characterised in that: the spilling water in described step g The total twice matting of cleaning one, the respectively cleaning of one-level spilling water and two grades of spilling waters cleanings, the wherein cleaning of one-level spilling water when Between t10=300s ± 5s, the time t of two grades of spilling water cleanings11=300s±5s.
6. large-current high-voltage silicon stack cleaning method according to claim 5 it is characterised in that: the cleaning of described one-level spilling water with Ultrasonic cleaning operation, the time t of ultrasonic cleaning is also had additional between two grades of spilling water cleanings12=300s±5s.
7. large-current high-voltage silicon stack cleaning method according to claim 1 it is characterised in that: the acetone in described step h Processed one has two procedures, respectively one grade acetone processed and two grade acetone processed, wherein one grade acetone The time t of processed13=300s ± 5s, the time t of two grade acetone processed14=300s±5s.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1095861A (en) * 1994-03-04 1994-11-30 阜宁县晶体管厂 A kind of packaging technology of miniature high voltage Si stack compound block
CN102489806A (en) * 2011-11-16 2012-06-13 扬州扬杰电子科技股份有限公司 Welding process for diode of high-voltage silicon rectifier stack

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1095861A (en) * 1994-03-04 1994-11-30 阜宁县晶体管厂 A kind of packaging technology of miniature high voltage Si stack compound block
CN102489806A (en) * 2011-11-16 2012-06-13 扬州扬杰电子科技股份有限公司 Welding process for diode of high-voltage silicon rectifier stack

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
微波炉用高压硅堆的设计与工艺;项兴荣;《半导体技术》;19931028(第5期);52-53 *

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