CN1095861A - A kind of packaging technology of miniature high voltage Si stack compound block - Google Patents
A kind of packaging technology of miniature high voltage Si stack compound block Download PDFInfo
- Publication number
- CN1095861A CN1095861A CN94111265A CN94111265A CN1095861A CN 1095861 A CN1095861 A CN 1095861A CN 94111265 A CN94111265 A CN 94111265A CN 94111265 A CN94111265 A CN 94111265A CN 1095861 A CN1095861 A CN 1095861A
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- CN
- China
- Prior art keywords
- high voltage
- miniature high
- compound block
- technology
- packaging technology
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Packaging Frangible Articles (AREA)
Abstract
A kind of miniature high voltage Si stack compound block packaging technology.This technology comprises steps such as batching, dress mould, encapsulation, curing.Owing to adopt modified epoxy once to encapsulate, the product design unanimity, small and exquisite, the productivity ratio height has improved the electrical quantity performance of product, steady quality.This technology is applicable to the production of miniature high voltage Si stack compound block.
Description
The present invention relates to a kind of method for packing of high voltage Si stack compound block.
The miniature high voltage Si stack compound block that now is used for the low-light level night vision device voltage multiplie, this combination block by several miniature high voltage Si stack tube cores in certain sequence array packages form.Manufacturing enterprise all adopts the manual dosing technology of epoxy resin both at home and abroad, and it is inconsistent that this technology exists overall dimension, and volume is bigger, and is yielding, and it is different in size to go between, the air-tightness of product, the poor reliability such as thermal endurance of lead-in wire, defectives such as electrical quantity index instability.
The present invention adopts method for packing of a kind of modified epoxy, thereby realizes that small product size is little, compact conformation, productivity ratio height, dependable performance.
The step of this packaging technology is:
1, batching: the modified epoxy that will return to room temperature carries out sub-material by every mould 20 grams.
2, dress mould: with tweezers the miniature high voltage Si stack compound block tube core is inserted in the Encapsulation Moulds that designs in advance successively by the both positive and negative polarity order, number of die is decided as required.
3, encapsulation: start packaging machine and make the upper and lower mould closure, behind the matched moulds, go into the modified epoxy material from the nozzle box, through injection head the modified epoxy material is injected in the mold cavity, this injection pressure is about 20-30kg/cm
2, about 30 seconds of inject time.After injection finishes, at 30-50kg/cm
2The demoulding after pressurize 2-3 minute under the pressure.
4, solidify: through about 48 hours, solidifying the encapsulation of promptly finishing miniature high voltage Si stack under 170-180 ℃.
Be described further below in conjunction with accompanying drawing:
Accompanying drawing 1 is packaged high voltage Si stack compound block front elevation, and Fig. 2 is a left view.By in the accompanying drawing as can be seen: tube core 1 is modified epoxy 2 and is wrapped up, and tube core 1 is pressed the both positive and negative polarity sequence arrangement, and lead-in wire 3 connects tube cores 2 and also stretches out outside the encapsulating film neat and consistent.
Claims (1)
- A kind of miniature high voltage Si stack compound block packaging technology, this technology are divided into steps such as batching, dress mould, encapsulation, curing, and it is characterized in that: this combination block encapsulating material is a modified epoxy; Injection pressure is 20-30kg/cm 2, injection time is 30 seconds; After the injection moulding at 30-50kg/cm 2Under the pressure pressurize 2-3 minute; Under 170-180 ℃, solidified again through 48 hours.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN94111265A CN1095861A (en) | 1994-03-04 | 1994-03-04 | A kind of packaging technology of miniature high voltage Si stack compound block |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN94111265A CN1095861A (en) | 1994-03-04 | 1994-03-04 | A kind of packaging technology of miniature high voltage Si stack compound block |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1095861A true CN1095861A (en) | 1994-11-30 |
Family
ID=5035153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN94111265A Pending CN1095861A (en) | 1994-03-04 | 1994-03-04 | A kind of packaging technology of miniature high voltage Si stack compound block |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1095861A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1309037C (en) * | 2003-11-05 | 2007-04-04 | 黄伟鹏 | Plastic moulding method and composite granules for integrated plug |
CN101488644B (en) * | 2009-02-13 | 2011-11-09 | 江苏雷宇高电压设备有限公司 | Automatic polarity switching oil immersion silicon stack |
CN104269350B (en) * | 2014-09-30 | 2017-01-25 | 如皋市大昌电子有限公司 | Cleaning process for large current high voltage silicon stack |
-
1994
- 1994-03-04 CN CN94111265A patent/CN1095861A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1309037C (en) * | 2003-11-05 | 2007-04-04 | 黄伟鹏 | Plastic moulding method and composite granules for integrated plug |
CN101488644B (en) * | 2009-02-13 | 2011-11-09 | 江苏雷宇高电压设备有限公司 | Automatic polarity switching oil immersion silicon stack |
CN104269350B (en) * | 2014-09-30 | 2017-01-25 | 如皋市大昌电子有限公司 | Cleaning process for large current high voltage silicon stack |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C01 | Deemed withdrawal of patent application (patent law 1993) | ||
WD01 | Invention patent application deemed withdrawn after publication |