CN106328555A - Magnetic force ink jet test technology applied to semiconductor - Google Patents
Magnetic force ink jet test technology applied to semiconductor Download PDFInfo
- Publication number
- CN106328555A CN106328555A CN201610741992.2A CN201610741992A CN106328555A CN 106328555 A CN106328555 A CN 106328555A CN 201610741992 A CN201610741992 A CN 201610741992A CN 106328555 A CN106328555 A CN 106328555A
- Authority
- CN
- China
- Prior art keywords
- wafer
- ink
- ink jet
- magnetic force
- crystal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The invention discloses a magnetic force ink jet test technology applied to a semiconductor. The invention provides the magnetic force ink jet test technology applied to the semiconductor, and the magnetic force ink jet test technology is simple in operation and can effectively and quickly remove unqualified crystal grains. The magnetic force ink jet test technology comprises the following steps of S1: carrying out laser cutting on a wafer to cause the wafer to be half-cut, and forming a plurality of crystal grains to be separated; S2: testing the crystal grains, and distinguishing unqualified crystal grains; S3: preparing magnetic ink; S4: carrying out wafer ink jet, and carrying out ink jet on the unqualified crystal grains; S5: drying, and putting the wafer subjected to the ink jet in an oven, wherein the temperature of the oven is 80-100DEG C, and time is 15-25min; S6: carrying out wafer splitting: putting a wafer to be split between two pieces of anti-static Mylar, and rolling the wafer through a rigid glue stick to cause the wafer to be split into a plurality of crystal grains; and S7: adsorbing the unqualified crystal grains with ink by a magnet, and finishing. By use of the magnetic force ink jet test technology, production cost is lowered, working efficiency is improved, and a rate of finished products is high.
Description
Technical field
The present invention relates to semiconductor wafer processing, particularly relate to the magnetic force ink-jet test technology of quasiconductor.
Background technology
Along with developing rapidly of semicon industry, it is badly in need of a kind of operating type that can quickly reject defective products crystal grain, carries
High efficiency, reduces production cost, it is ensured that the promptness of product-feed, enterprise image, strengthens enterprise competitiveness.
Semiconductor wafer uses test machine when testing, and wafer is electrically carried out ink-jet sorting, distinguish non-defective unit and
Defective products crystal grain.In existing microelectronic industry manufacture of semiconductor, such as: GPP wafer (has glass passivation protection P/N knot
Type wafers) after cut silicon chip, divide presenting the silicon chip partly cutting through state, whole silicon chip is divided into and meets
The single little crystal grain required, more manual by defective products crystal grain more than rejecting, greatly, production efficiency is low in artificial consuming, manufactures
Cost is high, simultaneously need to set up vacuum system, increases cost, and the two-sided gold-plated crystal grain being simultaneously sucked into cannot reclaim, then
The secondary loss caused economically.
Summary of the invention
The present invention is directed to problem above, it is provided that a kind of simple to operate, it is possible to the most quickly reject answering of defective crystal grain
Magnetic force ink-jet test technology for quasiconductor.
The technical scheme is that and comprise the following steps:
S1, first cut wafer, in partly cutting through shape, form some crystal grain to be separated；
S2, test crystal grain, distinguish defective crystal grain；
S3, magnetic ink are prepared；
S4, wafer ink-jet, carry out ink-jet to defective crystal grain；
S5, drying, be placed on the wafer after ink-jet in baking oven, and oven temperature is 80-100 DEG C, and the time is 15-25min；
S6, sliver, be placed on wafer to be split between two antistatic Maila papers, then grinds wafer by ebonite rod rolling so that it is
Split into some crystal grain；
S7, the defective crystal grain of magnet adsorption band ink, complete.
Step S3, magnetic ink are prepared；
S3.1, raw material prepare, including Fe3O4Powder 8-15g, ethanol 150-220ml and ink 400-600ml；
S3.2, raw material mix, by Fe3O4Powder is dissolved in the container holding ink, then ethanol is added container；
S3.3, raw material stirring, mixing time is 3-6h, and temperature is 15-30 DEG C；
S3.4, stand, complete.
Also include surfactant, surfactant is added in the container in step S3.2.
Wafer at work, is first cut in partly cutting through shape by the present invention；Defective crystal grain is distinguished by probe station test；Join
Magnetic ink processed；Defective crystal grain is carried out ink-jet by probe station；Wafer is dried, and is dried by magnetic ink, it is simple to follow-up behaviour
Make；Sliver, splits into some crystal grain by wafer；Finally, by the defective crystal grain of magnet adsorption, complete the course of processing, save
Time, improve work efficiency.In magnetic ink process for preparation, Fe3O4Powder has magnetic effect, and ink plays labelling
The effect of defective crystal grain, ethanol plays dilution and the effect dissolved, low cost, convenient processing.
Present invention reduces production cost, improve work efficiency, yield rate is high.
Detailed description of the invention
The present invention comprises the following steps:
S1, first cut wafer, in partly cutting through shape (i.e. Cutting Road is deep and wafer but non-through-wafer), are formed some to be separated
Crystal grain；
S2, test crystal grain, distinguish defective crystal grain, uses probe station to test；
S3, magnetic ink are prepared；
S4, wafer ink-jet, carry out ink-jet to defective crystal grain, uses probe station to carry out automatic ink-jet；The magnetic ink of preparation leads to
Dilution and the stirring of crossing solvent realize good viscous pasty state, and ink is sprayed onto the center position at chip；
S5, drying, be placed on the wafer after ink-jet in baking oven, and oven temperature is 80-100 DEG C, and the time is 15-25min；
S6, sliver, be placed on wafer to be split between two antistatic Maila papers, then grinds wafer by ebonite rod rolling so that it is
Split into some crystal grain；Maila paper prevents electrostatic, and crystal grain is adsorbed due to electrostatic interaction, thus causes and fly material, causes batch mixing etc.
Abnormal.
S7, the defective crystal grain of magnet adsorption band ink, complete；By carrying magnetic magnet adsorption, due to magnetic ink
Fe in water3O4Powder has metallic character so that adsorption reliability, it is simple to separate.
The effect of ethanol is dilution and dissolution；One is to be completely dissolved in ethanol by ink；Two is to Fe3O4 powder
Play the effect of dilution.
Step S3, magnetic ink are prepared；
S3.1, raw material prepare, including Fe3O4Powder 8-15g, ethanol 150-220ml and ink 400-600ml；
S3.2, raw material mix, by Fe3O4Powder is dissolved in the container holding ink, then ethanol is added container；
S3.3, raw material stirring, mixing time is 3-6h, and temperature is 15-30 DEG C；
S3.4, stand, complete.Fe3O4Powder has magnetic effect, and ink plays the effect of the defective crystal grain of labelling.Use
Front needs are sufficiently stirred at least more than 10min.
In application, including Fe3O4Powder 10g, ethanol 180ml and ink 500ml；By Fe3O4Powder is dissolved in and holds ink
Container, then ethanol is added container；Mixing time is 4h, and temperature is 20 DEG C；Stand, complete.
Also include surfactant, surfactant is added in the container in step S3.2.Surfactant has and disappears
Effect except surface tension, it is simple to clean (when crystal grain generation maloperation ink-jet), moreover it is possible to avoid occurring chip oxide rotten
The effect of erosion.
Claims (3)
1. the magnetic force ink-jet test technology being applied to quasiconductor, it is characterised in that comprise the following steps:
S1, first cut wafer, in partly cutting through shape, form some crystal grain to be separated；
S2, test crystal grain, distinguish defective crystal grain；
S3, magnetic ink are prepared；
S4, wafer ink-jet, carry out ink-jet to defective crystal grain；
S5, drying, be placed on the wafer after ink-jet in baking oven, and oven temperature is 80-100 DEG C, and the time is 15-25min；
S6, sliver, be placed on wafer to be split between two antistatic Maila papers, then grinds wafer by ebonite rod rolling so that it is
Split into some crystal grain；
S7, the defective crystal grain of magnet adsorption band ink, complete.
A kind of magnetic force ink-jet test technology being applied to quasiconductor the most according to claim 1, it is characterised in that step
S3, magnetic ink are prepared；
S3.1, raw material prepare, including Fe3O4Powder 8-15g, ethanol 150-220ml and ink 400-600ml；
S3.2, raw material mix, by Fe3O4Powder is dissolved in the container holding ink, then ethanol is added container；
S3.3, raw material stirring, mixing time is 3-6h, and temperature is 15-30 DEG C；
S3.4, stand, complete.
A kind of magnetic force ink-jet test technology being applied to quasiconductor the most according to claim 2, it is characterised in that also include
Surfactant, adds surfactant in the container in step S3.2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610741992.2A CN106328555A (en) | 2016-08-26 | 2016-08-26 | Magnetic force ink jet test technology applied to semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610741992.2A CN106328555A (en) | 2016-08-26 | 2016-08-26 | Magnetic force ink jet test technology applied to semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106328555A true CN106328555A (en) | 2017-01-11 |
Family
ID=57791235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610741992.2A Pending CN106328555A (en) | 2016-08-26 | 2016-08-26 | Magnetic force ink jet test technology applied to semiconductor |
Country Status (1)
| Country | Link |
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| CN (1) | CN106328555A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3572400A (en) * | 1967-08-31 | 1971-03-23 | Western Electric Co | Dispensing of fluids to small areas |
| TW301764B (en) * | 1995-11-21 | 1997-04-01 | Generall Instr Of Taiwan Ltd | Magnetic ink and method for manufacturing and sifting out of defective dice by using the same |
| US5811314A (en) * | 1996-06-07 | 1998-09-22 | General Instrument Of Taiwan, Ltd. | Magnetic ink and method for manufacturing and sifting out of defective dice by using the same |
| CN101579856A (en) * | 2008-05-16 | 2009-11-18 | 旺硅科技股份有限公司 | Bad crystal grain selector and method thereof |
| CN102436883A (en) * | 2011-09-14 | 2012-05-02 | 广东风华高新科技股份有限公司 | White edge sorting method in chip type electronic component |
| CN204481007U (en) * | 2015-03-18 | 2015-07-15 | 上海旭福电子有限公司 | A kind of device picking out bad crystal grain in chip point survey process |
-
2016
- 2016-08-26 CN CN201610741992.2A patent/CN106328555A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3572400A (en) * | 1967-08-31 | 1971-03-23 | Western Electric Co | Dispensing of fluids to small areas |
| TW301764B (en) * | 1995-11-21 | 1997-04-01 | Generall Instr Of Taiwan Ltd | Magnetic ink and method for manufacturing and sifting out of defective dice by using the same |
| US5811314A (en) * | 1996-06-07 | 1998-09-22 | General Instrument Of Taiwan, Ltd. | Magnetic ink and method for manufacturing and sifting out of defective dice by using the same |
| CN101579856A (en) * | 2008-05-16 | 2009-11-18 | 旺硅科技股份有限公司 | Bad crystal grain selector and method thereof |
| CN102436883A (en) * | 2011-09-14 | 2012-05-02 | 广东风华高新科技股份有限公司 | White edge sorting method in chip type electronic component |
| CN204481007U (en) * | 2015-03-18 | 2015-07-15 | 上海旭福电子有限公司 | A kind of device picking out bad crystal grain in chip point survey process |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170111 |
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| RJ01 | Rejection of invention patent application after publication |