CN103700740A - Manufacturing method of thyristor chip - Google Patents
Manufacturing method of thyristor chip Download PDFInfo
- Publication number
- CN103700740A CN103700740A CN201410013173.7A CN201410013173A CN103700740A CN 103700740 A CN103700740 A CN 103700740A CN 201410013173 A CN201410013173 A CN 201410013173A CN 103700740 A CN103700740 A CN 103700740A
- Authority
- CN
- China
- Prior art keywords
- described step
- thyristor chip
- acid
- chip
- welding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000003466 welding Methods 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000009461 vacuum packaging Methods 0.000 claims abstract description 8
- 238000011049 filling Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 239000002253 acid Substances 0.000 claims description 20
- 238000005260 corrosion Methods 0.000 claims description 19
- 230000007797 corrosion Effects 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 238000004026 adhesive bonding Methods 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 12
- 230000018044 dehydration Effects 0.000 claims description 10
- 238000006297 dehydration reaction Methods 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000011010 flushing procedure Methods 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 210000001161 mammalian embryo Anatomy 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 239000004819 Drying adhesive Substances 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229960000583 acetic acid Drugs 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000012362 glacial acetic acid Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 abstract description 3
- 238000005086 pumping Methods 0.000 abstract 1
- 229920002379 silicone rubber Polymers 0.000 abstract 1
- 239000004945 silicone rubber Substances 0.000 abstract 1
- 238000004513 sizing Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 230000003026 anti-oxygenic effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000011001 backwashing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Abstract
The invention relates to a manufacturing method of a thyristor chip. The method comprises the steps of filling, welding, corroding, washing, baking, sizing, carrying out vacuum-pumping, curing silicone rubber, polishing, removing an oxide layer and performing vacuum packaging. According to the manufacturing method provided by the invention, the manufacturing cost of the existing thyristor chip can be effectively saved, and the manufacturing method can be widely applied to the field of manufacturing of the thyristor chips.
Description
Technical field
The present invention relates to a kind of manufacture method of thyristor chip, relate in particular to a kind of manufacture method of copper thyristor chip.
Background technology
Thyristor is the abbreviation of thyratron transistor, can be called silicon controlled rectifier again, is called in the past controllable silicon for short; Nineteen fifty-seven, General Electric Apparatus Co.(U.S.A.) developed first item thyristor product in the world, and in 1958 by its commercialization; Thyristor is PNPN four-level semiconductor structure, and it has three utmost points: anode, negative electrode and gate pole; Thyristor has the characteristic of silicon rectification device, can under high voltage, large current condition, work, and its course of work can be controlled, be widely used in the electronic circuits such as controlled rectification, AC voltage adjusting, contactless electronic beam switch, inversion and frequency conversion.
Existing thyristor chip is mostly irony or copper, in the manufacturing process of thyristor chip, in order to improve conduction property and the antioxygenic property of product, need to carry out silver-plated processing on the surface of thyristor chip, to improve conduction property and the antioxygenic property of product, so just increased production cost.
Summary of the invention
The manufacture method that the object of this invention is to provide a kind of thyristor chip, solves the higher problem of manufacture method production cost that adopts existing thyristor chip in production process.
The technical solution adopted for the present invention to solve the technical problems is: a kind of manufacture method of thyristor chip, the method comprises the steps:
(1) filling: naked copper sheet, weld tabs, silicon chip, weld tabs, naked copper sheet are loaded successively into graphite welding plate;
(2) welding: the graphite welding plate after described step (1) filling is put into vacuum welding equipment and carry out vacuum welding and obtain thyristor chip proembryo;
(3) corrosion: the thyristor chip after described step (2) welding is corroded; In parts by volume, first the first acid corrosion that the glacial acetic acid that the sulfuric acid that the nitric acid that the hydrofluoric acid that to use by 9 parts of concentration be 40%-45%, 9 parts of concentration are 65%-68%, 4 parts of concentration are 98%, 12 parts of concentration are 99.9% forms, entering sour temperature is 15 ℃ to 25 ℃, first thyristor chip proembryo is put into fill the first acid the first container internal corrosion 200 to 300s, then by thyristor chip proembryo put into fill the first acid second container internal corrosion 200 to 300s; Then the second acid that the phosphoric acid that to rinse sour oxygen water that to put into by 1 part of concentration in 2 to 5 minutes be 35% again, 1 part of concentration be 99%, 2 parts of pure water form is corroded, and entering sour temperature is 40 ℃ to 60 ℃, and etching time is 60s to 90s; After take out rinsing, under normal temperature, the third solution that the ammoniacal liquor that to put into by a concentration be 35%, 5 parts of pure water form reacts 1 to 2 minute, then takes out flushing.
(4) dehydration: the thyristor chip proembryo after described step (3) corrosion is dewatered with absolute ethyl alcohol;
(5) baking: the copper chip after described step (4) dehydration is placed in baking box and is dried;
(6) gluing: the former embryo surface of thyristor chip after described step (5) baking is coated to the glue for the protection of silicon chip table top, then put into vacuum equipment and vacuumize, then take out drying adhesive;
(7) frictioning: by the upper and lower surface finish of thyristor chip proembryo after described step (6) gluing;
(8) deoxidation layer: the thyristor chip proembryo after described step (8) test is put into the described the second acid of step (3) and carry out pickling, then use pure water rinsing, then with absolute ethyl alcohol dehydration, finally dry;
(9) vacuum packaging: the copper chip after described step (9) deoxidation layer is carried out to vacuum packaging.
Prevent the oxidation in welding process, in described step (2) welding process, before welding, by logical vacuumize-100kp of nitrogen, change nitrogen number of times 5 to 6 times; In welding process, change nitrogen 1-3 time.
In order to guarantee to rinse well, the flushing described in described step (3) is pure water rinsing 2-5 minute, or Ultrasonic 5-10 minute.
In order to make to dry completely, described step (5) baking is in baking oven, and 150 ℃ are toasted 30 minutes to one hour, until dry.
For can be thoroughly by vacuumizing, remove the bubble on glue, in described step (6) gluing, vacuumize-10 to-20kp, keep half an hour.
Anti-oxidation, in described step (2) welding process, before welding, takes a breath by vacuumize-100kp and logical nitrogen, rate of ventilation 5 to 6 times; In welding process, change nitrogen 1-3 time.
In order to rinse well, the flushing described in described step (3) is pure water rinsing 2-5 minute, or Ultrasonic 5-10 minute.
For thorough oven dry, described step (5) baking is in baking oven, and 150 ℃ are toasted 30 minutes to one hour, until dry.
In described step (6) gluing, vacuumize-10 to-20kp, keep half an hour.
Preferably, described glue is DOW CORNING silica gel.
Beneficial effect of the present invention: thyristor chip is selected copper chip, in process of production, copper chip before producing is carried out to deoxidation processing and carry out again vacuum packaging, just can save in the general manufacturing process of existing irony or copper chip and need to carry out the oxidation resistance of improving product by silver-plated this operation, thereby reach the object of having saved production cost.In corrosion process, the first acid can be good at corrosion of silicon table top, improves the fineness of silicon chip table top, can be good at improving the breakdown characteristics of thyristor chip, and can reduce electric leakage, prevents secondary welding, has improved the yield of product; The second acid can be good at passivation silicon chip table top, removes unnecessary copper ion metal, improves the performance of thyristor chip; The third solution can effectively must neutralize the acidity of the thyristor chip proembryo after the first acid and the second acid, and reaction time and the control of entering sour temperature can guarantee that corrosion fully.In the first acid, in two containers, react respectively at twice, can guarantee to react completely fully.Before welding, by vacuumize-100kp and logical nitrogen, take a breath, rate of ventilation 5 to 6 times; In welding process, change nitrogen 1-3 time, can effectively prevent the oxidative phenomena in welding process.Rinse as pure water rinsing 2-5 minute, or Ultrasonic 5-10 minute, can be good at cleaning the thyristor chip after excessive erosion.Baking is in baking oven, and 150 ℃ are toasted 30 minutes to one hour, guarantees fully baking.In gluing, vacuumize-10 to-20kp, keep half an hour, extract bubble in glue out, can make glue cover the former embryo surface of thyristor chip completely, to reach protection table top, improve to resist and wear and ageing resistance.DOW CORNING silica gel can be good at seal protection silicon chip table top.
Below in conjunction with embodiment, the present invention is described in further detail.
Embodiment
Embodiment 1, a kind of manufacture method of thyristor chip, and the method comprises the steps:
(1) filling: naked copper sheet, weld tabs, silicon chip, weld tabs, naked copper sheet are loaded successively into graphite welding plate;
(2) welding: the graphite welding plate after described step (1) filling is put into vacuum welding equipment and carry out vacuum welding and obtain thyristor chip proembryo; Graphite welding plate has good heat transfer property, can the fine efficiency that must improve vacuum welding.
(3) corrosion: the thyristor chip after described step (2) welding is corroded; In parts by volume, first the first acid corrosion that the glacial acetic acid that the sulfuric acid that the nitric acid that the hydrofluoric acid that to use by 9 parts of concentration be 40%-45%, 9 parts of concentration are 65%-68%, 4 parts of concentration are 98%, 12 parts of concentration are 99.9% forms, entering sour temperature is 15 ℃ to 25 ℃, first thyristor chip proembryo is put into fill the first acid the first container internal corrosion 200 to 300s, then by thyristor chip proembryo put into fill the first acid second container internal corrosion 200 to 300s; Then the second acid that the phosphoric acid that to rinse sour oxygen water that to put into by 1 part of concentration in 2 to 5 minutes be 35% again, 1 part of concentration be 99%, 2 parts of pure water form is corroded, and entering sour temperature is 40 ℃ to 60 ℃, and etching time is 60s to 90s; After take out rinsing, under normal temperature, the third solution that the ammoniacal liquor that to put into by a concentration be 35%, 5 parts of pure water form reacts 1 to 2 minute, then takes out flushing.
(4) dehydration: the thyristor chip proembryo after described step (3) corrosion is dewatered with absolute ethyl alcohol; Absolute ethyl alcohol has good soaking effect, and thyristor chip proembryo be can be good at removing with absolute ethyl alcohol dehydration the water depending on thyristor chip proembryo, saves the time spent in subsequent technique baking procedure.
(5) baking: the copper chip after described step (4) dehydration is placed in baking box and is dried; Also under common sunlamp, dry now, because be directly to carry out at air ambient, oxidative phenomena easily occurs.
(6) gluing: the former embryo surface of thyristor chip after described step (5) baking is coated to the glue for the protection of silicon chip table top, then put into vacuum equipment and vacuumize, then take out drying adhesive; Glue can be good at protecting silicon chip table top, prevents that silicon chip table top from getting dirty, thereby the resistance that improves thyristor chip is worn and ageing resistance.Glue is selected DOW CORNING silica gel, has good sealing property, can well protect silicon chip table top.
(7) frictioning: by the upper and lower surface finish of thyristor chip proembryo after described step (6) gluing; The upper and lower surface of polishing, is for the surface of naked copper sheet is not covered by glue, is convenient to welding.
(8) deoxidation layer: the thyristor chip proembryo after described step (8) test is put into the described the second acid of step (3) and carry out pickling, then use pure water rinsing, then with absolute ethyl alcohol dehydration, finally dry; Guarantee that thyristor chip proembryo does not have oxidized, make the thyristor chip produced stable and reliable for performance.
(9) vacuum packaging: the copper chip after described step (9) deoxidation layer is carried out to vacuum packaging.Except the method by deoxidation layer, common means are zinc-plated after polishing at present, to protect thyristor chip not oxidized.
In described step (2) welding process, before welding, by logical vacuumize-100kp of nitrogen, change nitrogen number of times 5 to 6 times; In welding process, change nitrogen 1-3 time.Nitrogen belongs to inert gas, can not react with material, prevented that extraneous gas from entering simultaneously, before welding, change nitrogen number of times 5 to 6 times, can guarantee by nitrogen, to be covered completely in vacuum equipment, so that in welding process, thyristor chip proembryo not can with other gas generation chemical reaction, mainly contain oxidation reaction.In welding process, change nitrogen and be also for 1-3 time and above-mentioned same object.
Flushing described in described step (3) is pure water rinsing 2-5 minute, or Ultrasonic 5-10 minute.Two kinds of backwashing manners are all in order thoroughly to clean the thyristor chip proembryo after corrosion.
Described step (5) baking is in baking oven, and 150 ℃ are toasted 30 minutes to one hour, until dry.Concrete baking time is to determine according to the humidity of thyristor chip, guarantees to dry just.
In described step (6) gluing, vacuumize-10 to-20kp, keep half an hour, so that after gluing, the bubble between glue and thyristor chip proembryo is eliminated completely, thereby reaches the object of protection silicon chip table top.
After described step (9), also comprise testing procedure, test comprises normal temperature test and two parts of high temperature test, and described high temperature test refers to the thyristor chip after normal temperature test to be placed on aluminum heating station and to test, and probe temperature is 150 ℃.Test respectively forward voltage drop and the reverse voltage of both positive and negative polarity tube core, during normal temperature test, electric leakage is qualified below 1uA; During high temperature test, electric leakage is qualified at 100uA.
The present invention can effectively save the cost of manufacture of thyristor chip, can be widely used in the making of thyristor chip.
Claims (6)
1. a manufacture method for thyristor chip, is characterized in that: the method comprises the steps:
(1) filling: naked copper sheet, weld tabs, silicon chip, weld tabs, naked copper sheet are loaded successively into graphite welding plate;
(2) welding: the graphite welding plate after described step (1) filling is put into vacuum welding equipment and carry out vacuum welding and obtain thyristor chip proembryo;
(3) corrosion: the thyristor chip after described step (2) welding is corroded; In parts by volume, first the first acid corrosion that the glacial acetic acid that the sulfuric acid that the nitric acid that the hydrofluoric acid that to use by 9 parts of concentration be 40%-45%, 9 parts of concentration are 65%-68%, 4 parts of concentration are 98%, 12 parts of concentration are 99.9% forms, entering sour temperature is 15 ℃ to 25 ℃, first thyristor chip proembryo is put into fill the first acid the first container internal corrosion 200 to 300s, then by thyristor chip proembryo put into fill the first acid second container internal corrosion 200 to 300s; Then the second acid that the phosphoric acid that to rinse sour oxygen water that to put into by 1 part of concentration in 2 to 5 minutes be 35% again, 1 part of concentration be 99%, 2 parts of pure water form is corroded, and entering sour temperature is 40 ℃ to 60 ℃, and etching time is 60s to 90s; After take out rinsing, under normal temperature, the third solution that the ammoniacal liquor that to put into by a concentration be 35%, 5 parts of pure water form reacts 1 to 2 minute, then takes out flushing.
(4) dehydration: the thyristor chip proembryo after described step (3) corrosion is dewatered with absolute ethyl alcohol;
(5) baking: the copper chip after described step (4) dehydration is placed in baking box and is dried;
(6) gluing: the former embryo surface of thyristor chip after described step (5) baking is coated to the glue for the protection of silicon chip table top, then put into vacuum equipment and vacuumize, then take out drying adhesive;
(7) frictioning: by the upper and lower surface finish of thyristor chip proembryo after described step (6) gluing;
(8) deoxidation layer: the thyristor chip proembryo after described step (8) test is put into the described the second acid of step (3) and carry out pickling, then use pure water rinsing, then with absolute ethyl alcohol dehydration, finally dry;
(9) vacuum packaging: the copper chip after described step (9) deoxidation layer is carried out to vacuum packaging.
2. the manufacture method of thyristor chip according to claim 1, is characterized in that: in described step (2) welding process, before welding, by logical vacuumize-100kp of nitrogen, change nitrogen number of times 5 to 6 times; In welding process, change nitrogen 1-3 time.
3. the manufacture method of thyristor chip according to claim 1, is characterized in that: the flushing described in described step (3) is pure water rinsing 2-5 minute, or Ultrasonic 5-10 minute.
4. the manufacture method of thyristor chip according to claim 1, is characterized in that: described step (5) baking is in baking oven, and 150 ℃ are toasted 30 minutes to one hour, until dry.
5. the manufacture method of thyristor chip according to claim 1, is characterized in that: in described step (6) gluing, vacuumize-10 to-20kp, keep half an hour.
6. the manufacture method of thyristor chip according to claim 1 or 5, is characterized in that: described glue is DOW CORNING silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410013173.7A CN103700740B (en) | 2014-01-10 | 2014-01-10 | A kind of manufacture method of thyristor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410013173.7A CN103700740B (en) | 2014-01-10 | 2014-01-10 | A kind of manufacture method of thyristor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103700740A true CN103700740A (en) | 2014-04-02 |
| CN103700740B CN103700740B (en) | 2016-04-13 |
Family
ID=50362210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410013173.7A Active CN103700740B (en) | 2014-01-10 | 2014-01-10 | A kind of manufacture method of thyristor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103700740B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565217A (en) * | 2017-12-29 | 2018-09-21 | 黄山市弘泰电子有限公司 | A kind of manufacturing method of automobile avalanche diode |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112077A (en) * | 2019-05-15 | 2019-08-09 | 扬州虹扬科技发展有限公司 | A kind of production technology of rectifier diode core |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308238A (en) * | 2000-04-21 | 2001-11-02 | Honda Motor Co Ltd | Soldering method |
| CN101697347A (en) * | 2009-10-27 | 2010-04-21 | 刘卫歧 | Plate thyristor and plate transistor as well as application technology thereof |
| CN102214642A (en) * | 2011-06-03 | 2011-10-12 | 安徽省祁门县黄山电器有限责任公司 | Combined type high-power semiconductor chip |
| CN102306628A (en) * | 2011-08-23 | 2012-01-04 | 黄山市晨曦电器有限公司 | Method for manufacturing planar diode or die of thyristor by utilizing aluminium foil as solder |
| CN102789978A (en) * | 2012-07-26 | 2012-11-21 | 黄山市七七七电子有限公司 | Production process of ordinary electric rectifier diode chip |
-
2014
- 2014-01-10 CN CN201410013173.7A patent/CN103700740B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308238A (en) * | 2000-04-21 | 2001-11-02 | Honda Motor Co Ltd | Soldering method |
| CN101697347A (en) * | 2009-10-27 | 2010-04-21 | 刘卫歧 | Plate thyristor and plate transistor as well as application technology thereof |
| CN102214642A (en) * | 2011-06-03 | 2011-10-12 | 安徽省祁门县黄山电器有限责任公司 | Combined type high-power semiconductor chip |
| CN102306628A (en) * | 2011-08-23 | 2012-01-04 | 黄山市晨曦电器有限公司 | Method for manufacturing planar diode or die of thyristor by utilizing aluminium foil as solder |
| CN102789978A (en) * | 2012-07-26 | 2012-11-21 | 黄山市七七七电子有限公司 | Production process of ordinary electric rectifier diode chip |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565217A (en) * | 2017-12-29 | 2018-09-21 | 黄山市弘泰电子有限公司 | A kind of manufacturing method of automobile avalanche diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103700740B (en) | 2016-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101593693B (en) | Method for preparing high-voltage SIDAC | |
| CN102263140A (en) | Plastic package power diode and manufacturing technology thereof | |
| CN104359737B (en) | The method of testing of crystalline silicon body minority carrier life time | |
| CN103480598B (en) | Silicon wafer cleaning method for preparing high-efficiency solar cell and cleaning equipment | |
| CN104538180B (en) | A kind of preparation method of SOLID ORGANIC electrolytic capacitor | |
| CN101989533A (en) | Chip packaging block de-packaging method and device | |
| CN108010841A (en) | A kind of manufacture method of diode and thus obtained diode | |
| CN103700740B (en) | A kind of manufacture method of thyristor chip | |
| CN107393822A (en) | A kind of manufacture method suppressed with transient voltage with the glassivation fly-wheel diode of rectification function | |
| Hromadka et al. | DBC technology for low cost power electronic substrate manufacturing | |
| CN102569531A (en) | Passivating method for polycrystalline silicon chips | |
| CN107507760B (en) | Surface cleaning method for silicon dioxide chip in diode manufacturing | |
| CN104733565B (en) | It is a kind of to be applied to the lithographic method that crystalline silicon wet-method etches controllable side | |
| CN109309142A (en) | Liquid source diffusion process before silicon wafer glass passivation | |
| CN107301949A (en) | A kind of use tungsten electrode manufactures the manufacture method of highly reliable transient voltage suppressor diode | |
| CN106783527A (en) | The cleaning method of semiconductor wafer | |
| CN110112077A (en) | A kind of production technology of rectifier diode core | |
| CN106611700A (en) | Preparation method of oxidization film in surface of silicon carbide | |
| CN105742067A (en) | Aluminum foil production method capable of improving capacitance extraction rate of solid-state capacitor and decreasing leakage current of solid-state capacitor | |
| CN104384142A (en) | SMD (Surface Mounted Devices) bridge rectifier ultrasonic cleaning process | |
| CN106653600A (en) | GPP chip electrophoresis fabrication process | |
| CN111962075A (en) | Preparation method of electrode foil with ultrahigh specific volume, electrode foil with ultrahigh specific volume and electrolytic capacitor | |
| CN103474332A (en) | Etching method for promoting Web Growth | |
| CN106571411A (en) | Crystal silicon wafer etching method | |
| CN102306628B (en) | Method for manufacturing planar diode or die of thyristor by utilizing aluminium foil as solder |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A Method for Making Thyristor Chips Effective date of registration: 20230328 Granted publication date: 20160413 Pledgee: Qimen County Sub branch of Postal Savings Bank of China Co.,Ltd. Pledgor: HUANGSHAN HONGTAI ELECTRONIC Co.,Ltd. Registration number: Y2023980036543 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20160413 Pledgee: Qimen County Sub branch of Postal Savings Bank of China Co.,Ltd. Pledgor: HUANGSHAN HONGTAI ELECTRONIC Co.,Ltd. Registration number: Y2023980036543 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |