CN102789978A - Production process of ordinary electric rectifier diode chip - Google Patents
Production process of ordinary electric rectifier diode chip Download PDFInfo
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- CN102789978A CN102789978A CN2012102626839A CN201210262683A CN102789978A CN 102789978 A CN102789978 A CN 102789978A CN 2012102626839 A CN2012102626839 A CN 2012102626839A CN 201210262683 A CN201210262683 A CN 201210262683A CN 102789978 A CN102789978 A CN 102789978A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 17
- 238000004073 vulcanization Methods 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 9
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 7
- 238000005260 corrosion Methods 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 239000011733 molybdenum Substances 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 4
- 238000000465 moulding Methods 0.000 claims description 19
- 239000003292 glue Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- 239000000084 colloidal system Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000012856 packing Methods 0.000 claims description 8
- -1 molybdenum aluminium silicon phase alloy Chemical class 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 239000005030 aluminium foil Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 4
- 239000011888 foil Substances 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 230000006835 compression Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention relates to a whole set of production process of an ordinary electric rectifier diode chip. From the beginning to the end, the whole production process comprises the steps of wire cutting, washing, vacuum sintering, vacuum evaporation and vacuum microalloying, black rubber protection, angle lapping, acid corrosion, rubber protection, room temperature vulcanization, high temperature solidification, detection and packaging. A washed monocrystalline silicon piece is in the following multi-layer structure which is sequentially provided with a molybdenum piece, aluminum foil and a monocrystalline silicon piece from bottom to top, the vacuum sintering is carried out in a sintering furnace, and then an aluminum film is evaporated onto the whole monocrystalline silicon piece; and the angle lapping is carried out in a multi-angle matched grinding process. The production process disclosed by the invention has the advantages that a chip with a novel structure is produced, and the table board modeling mode of a single angle table board of the conventional electric rectifier diode chip is broken through. The new application technology of the multi-angle matched grinding process enables the table board of the chip to have a more perfect multi-angle table board model. The capacity of bearing higher working voltage of the electric rectifier diode chip is effectively improved.
Description
Technical field
The present invention relates to a kind of production technology of semiconductor components and devices, specifically is a kind of production technology of common electric power rectifier diode chip.
Background technology
Rectifying tube is a kind of semiconductor components and devices that alternating current is converted into the Rectified alternating current of single direction.How chip in the rectifying tube is made with semi-conducting material monocrystalline silicon.Common electric power rectifier diode has unilateral conduction, in operating circuit, usually utilizes its unilateral conduction, and circuit is played rectification and protective effect.The common electric power rectifier diode of ZP series is widely used in electric power, building, and metallurgy, industries such as national defence, for example: state-owned large-scale power and industrial and mineral equipment, electric welding machine, boat excitation, the traction of large-scale power locomotive etc.
Mostly the chip table of conventional general power rectifier diode is the table top moulding of single angle, and difficulty is born the more impact of high working voltage, has restricted high pressure, the manufacturing and the development of electric current ZP chip greatly.The appearance of multi-angle collocation grinding technics application technology makes chip table have more perfectly multi-angle table top moulding, has effectively increased the power rectifier die and has carried the more ability of high working voltage.Broken through the manufacturing bottleneck of high pressure, big electric current ZP chip fully.
The production technology of the common electric power rectifier diode of ZP series compression joint type high pressure chip comprises the steps:
1, the silicon single crystal diffusion sheet cuts with wire cutting machine, cuts into needed regular circular geometric units body.Geometric units body diameter is generally between 6mm～100mm.
2, later chip thinning cleaning is accomplished in cutting, makes chip surface clean.
3, clean later chip and carry out vacuum-sintering.
4, black glue protection.Black glue evenly is coated on the cathode plane and anode surface of chip, protects molybdenum sheet and aluminium film, in order to avoid in follow-up corrosion process, corrode bad molybdenum sheet and aluminium film.
5, angle lap.The method that tradition adopts is along tapered slope of grinding out certain angle and width circular one week of chip edge or cambered surface (being referred to as the table top moulding of chip), thereby makes chip have certain breakdown-voltage.
Existing angle lap mode all is to adopt manual angle lap mode, promptly with hand with chip by being pressed on the bevelling post, bevelling post is rotated by driven by motor synchronously, hand-guided makes the angle (being the table top moulding of chip) that the edge of silicon chip grinds to be needed.
6, acid corrosion.Under the certain condition, chip is placed in the mixed acid solution soaks, make the chip table moulding level and smooth, no corner angle.Damage and stain thereby eliminate chip table, make how much table tops of chip clean level and smooth, reduced the influence of chip table surface field.
7, the colloid protection is clean geometry table top and an electric insulation of protection chip;
8, room temperature vulcanization.Protection glue room temperature vulcanization 8-12 hour (special colloid, room temperature vulcanization time meeting proper extension).
9, hot setting.Chip week after the room temperature vulcanization goes in the baking oven dries, and stoving time is 72 hours, temperature 190 degree.
10, detect packing, according to electrically requiring testing classification, packing.
The manufacturing process of traditional common electric power rectifier diode chip is comparatively backward, and the rectifier diode voltage bearing capacity that produces is not high, and kind is more single, and range of application is narrow.Chip thermal fatigue resistance ability, the outward appearance resolution is not high.Therefore be necessary the manufacturing process of existing common electric power rectifier diode chip is improved and optimum organization.
Summary of the invention
The technical problem that the present invention will solve is that optimum organization goes out the cover manufacturing process of advanced common electric power rectifier diode chip more.
The present invention adopts following technical scheme to solve the problems of the technologies described above: a kind of production technology of common electric power rectifier diode chip comprises the steps:
Step 5, angle lap grind out required chip table moulding to chip with bevelling post;
Step 6, acid corrosion under the certain condition, are placed on chip in the mixed acid solution and soak, and make the chip table moulding level and smooth, no corner angle;
Step 7, colloid protection are clean geometry table top and electric insulations of protection chip;
Step 8, room temperature vulcanization, protection glue room temperature vulcanization 8-12 hour;
Step 9, hot setting, the chip week after the room temperature vulcanization goes in the baking oven dries, and stoving time is 72 hours, temperature 190 degree;
It is characterized in that: the concrete steps of said step 3 comprise:
Wherein clean later monocrystalline silicon piece, be followed successively by from bottom to up according to following sandwich construction: molybdenum sheet, aluminium foil, monocrystalline silicon piece, carry out vacuum-sintering in sintering furnace; Make anode surface form molybdenum aluminium silicon phase alloy; Between sintering temperature 660 degree to 680 degree, 30 minutes time, then with aluminium film vapor deposition to whole monocrystalline silicon piece anode surface; Through the vacuum microalloy, make anode surface form aluminium silicon phase alloy.
The present invention further is optimized for: the technology that the angle lap mode of said step 5 adopts the multi-angle collocation to grind; At first use the cone mill hornwork of an angle that chip is ground out first inclined-plane; And then use the cone mill hornwork of another angle to grind out second inclined-plane in the upper edge on first inclined-plane; Use the pot mill hornwork to grind out auxiliary arcwall face in the junction on first inclined-plane and second inclined-plane at last, first inclined-plane, second inclined-plane and auxiliary arcwall face consist of the table top moulding of chip.
The present invention further is optimized for: said cone mill hornwork comprises the bevelling post cylinder, and the top of said bevelling post cylinder offers the angle lap groove, and said angle lap groove has the abradant surface of conical inclined surface;
Said pot mill hornwork comprises the bevelling post cylinder, and the top of said bevelling post cylinder offers the angle lap groove, and said angle lap groove has spherical abradant surface.
The present invention further is optimized for: the below of the cylinder of said cone mill hornwork offers the axial location hole; The below of the cylinder of said pot mill hornwork offers the axial location hole.
The present invention further is optimized for: the gluing in the said step 7 is a colored blue colloid on the table top of chip.
The invention has the advantages that: the chip structure of multilayer compression joint type has then replaced the traditional welded structure of common electric power rectifier tube chip; And because the existence of compression joint type sandwich construction; Solved the thermal fatigue problem of power rectifier die; The rectifier tube chip electric leakage is little, on-state voltage drop is little, and is functional; Broken through the table top moulding pattern of traditional single angle of power rectifier die table top; The appearance of the new application technology of multi-angle collocation grinding technics; Make chip table have more perfectly multi-angle table top moulding, effectively improved the power rectifier die and carried the more ability of high working voltage.
Description of drawings
Fig. 1 is the silicon chip structural profile sketch map of sintering among the present invention.
Fig. 2 is the later silicon chip structural profile sketch map of angle lap.
Fig. 3 is the planar structure sketch map of the cone mill hornwork that uses among the present invention.
Fig. 4 is the planar structure sketch map of the pot mill hornwork that uses among the present invention.
Embodiment
A kind of production technology of improved common electric power rectifier diode chip comprises the steps:
Step 5, angle lap, the technology that the present invention adopts the multi-angle collocation to grind.See also shown in Figure 2; 10 one-tenth of chips are cylindric; Use cone mill hornwork as shown in Figure 3 that the edge grinding of chip 10 is gone out first inclined-plane 12 earlier; Re-use the cone mill hornwork and grind out second inclined-plane 14, use pot mill hornwork as shown in Figure 4 to grind out auxiliary circle cambered surface 16 at last on first inclined-plane of chip 10 and the junction on second inclined-plane along the upper edge, first inclined-plane of chip 10; First inclined-plane 12, second inclined-plane 14, auxiliary circle cambered surface 16, the multi-angle table top moulding of compositing chip 10;
Said cone mill hornwork comprises bevelling post cylinder 20; The top of said bevelling post cylinder 20 offers angle lap groove 24; Said angle lap groove 24 has the abradant surface 242 of taper; The below of said bevelling post cylinder 20 offers axial location hole (figure does not show), and the axial location hole is to be used for bevelling post is fixed in the motor rotating shaft of (figure does not show).After the motor work, can synchronously rotate through driving bevelling post cylinder 20.To grind chip in the slope by on the taper abradant surface 242 that is pressed in bevelling post with hand, bevelling post is rotated by motor drives, and hand-guided can make angle and the width (being the table top moulding of chip) that the edge of chip grinds to be needed;
Said pot mill hornwork comprises: bevelling post cylinder 30; The top of said bevelling post cylinder 30 offers angle lap groove 34; Said angle lap groove 34 has spherical abradant surface 342; The below of said bevelling post cylinder 30 offers axial location hole (figure does not show), and the axial location hole is to be used for bevelling post is fixed in the motor rotating shaft of (figure does not show).After the motor work, can drive bevelling post cylinder 30 and synchronously rotate.To grind chip in the slope by on the spherical grinding face 342 that is pressed in bevelling post with hand, bevelling post is rotated by motor drives, and hand-guided can make angle and the width (being the table top moulding of chip) that the edge of chip grinds to be needed;
Different angles collocation grinding technics The application of new technique makes that the chip table moulding is the moulding of multi-angle table top by original single angle change.Thereby make the power rectifier die have the ability of the higher reverse breakdown voltage of carrying.
Step 6, acid corrosion.Under the certain condition, chip is placed in the mixed acid solution soaks, make the chip table moulding level and smooth, no corner angle.Damage and stain thereby eliminate chip table, make how much table tops of chip clean level and smooth, reduced the influence of chip table surface field;
Step 7, exclusive blue colloid protection are clean geometry table top and electric insulations of protection chip, and chip table is because the protection of exclusive blue colloid makes product that very high resolution and anti-fake effect arranged;
Step 8, room temperature vulcanization.Protection glue room temperature vulcanization 8-12 hour (special colloid, room temperature vulcanization time meeting proper extension).
Step 9, hot setting.Chip week after the room temperature vulcanization goes in the baking oven dries, and stoving time is 72 hours, temperature 190 degree.
The above is merely the preferred embodiment of the invention; Not in order to restriction the invention; Any modification of being done within all spirit and principles in the invention, be equal to replacement and improvement etc., all should be included within the protection range of the invention.
Claims (5)
1. the production technology of a common electric power rectifier diode chip comprises the steps:
Step 1, silicon single crystal diffusion sheet cut with wire cutting machine, cut into needed regular circular geometric units body;
Step 2, the later silicon chip of cutting carry out attenuate and clean;
Step 3, vacuum-sintering, vacuum evaporation and vacuum microalloy;
Step 4, black glue protection evenly are coated to black glue on the cathode plane and anode surface of chip, protect molybdenum sheet and aluminium film;
Step 5, angle lap grind out required chip table moulding to chip with bevelling post;
Step 6, acid corrosion under the certain condition, are placed on chip in the mixed acid solution and soak, and make the chip table moulding level and smooth, no corner angle;
Step 7, colloid protection are clean geometry table top and electric insulations of protection chip;
Step 8, room temperature vulcanization, protection glue room temperature vulcanization 8-12 hour;
Step 9, hot setting, the chip week after the room temperature vulcanization goes in the baking oven dries, and stoving time is 72 hours, temperature 190 degree;
Step 10, detection packing are according to electrically requiring testing classification, packing;
It is characterized in that: the concrete steps of said step 3 comprise:
Wherein clean later monocrystalline silicon piece, be followed successively by from bottom to up according to following sandwich construction: molybdenum sheet, aluminium foil, monocrystalline silicon piece, carry out vacuum-sintering in sintering furnace; Make anode surface form molybdenum aluminium silicon phase alloy; Between sintering temperature 660 degree to 680 degree, 30 minutes time, then with aluminium film vapor deposition to whole monocrystalline silicon piece anode surface; Through the vacuum microalloy, make anode surface form aluminium silicon phase alloy.
2. the production technology of common electric power rectifier diode chip as claimed in claim 1; It is characterized in that: the technology that the angle lap mode of said step 5 adopts the multi-angle collocation to grind; At first use the cone mill hornwork of an angle that chip is ground out first inclined-plane; And then use the cone mill hornwork of another angle to grind out second inclined-plane in the upper edge on first inclined-plane; Use the pot mill hornwork to grind out auxiliary arcwall face in the junction on first inclined-plane and second inclined-plane at last, first inclined-plane, second inclined-plane and auxiliary arcwall face consist of the table top moulding of chip.
3. the production technology of common electric power rectifier diode chip as claimed in claim 2; It is characterized in that: said cone mill hornwork comprises the bevelling post cylinder; The top of said bevelling post cylinder offers the angle lap groove, and said angle lap groove has the abradant surface of conical inclined surface;
Said pot mill hornwork comprises the bevelling post cylinder, and the top of said bevelling post cylinder offers the angle lap groove, and said angle lap groove has spherical abradant surface.
4. the production technology of common electric power rectifier diode chip as claimed in claim 3 is characterized in that: the below of the cylinder of said cone mill hornwork offers the axial location hole; The below of the cylinder of said pot mill hornwork offers the axial location hole.
5. like the production technology of each described common electric power rectifier diode chip of claim 1 to 4, it is characterized in that: the gluing in the said step 7 is a colored blue colloid on the table top of chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210262683.9A CN102789978B (en) | 2012-07-26 | 2012-07-26 | Production process of ordinary electric rectifier diode chip |
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| CN201210262683.9A CN102789978B (en) | 2012-07-26 | 2012-07-26 | Production process of ordinary electric rectifier diode chip |
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| CN102789978A true CN102789978A (en) | 2012-11-21 |
| CN102789978B CN102789978B (en) | 2015-06-10 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700740A (en) * | 2014-01-10 | 2014-04-02 | 黄山市弘泰电子有限公司 | Manufacturing method of thyristor chip |
| CN104241122A (en) * | 2014-09-29 | 2014-12-24 | 广安市嘉乐电子科技有限公司 | Production method for sheet silicon-particle rectifier diodes |
| CN106067419A (en) * | 2016-08-22 | 2016-11-02 | 成都众乐泰科技有限公司 | A kind of optimized production process of diode |
| CN106252245A (en) * | 2016-09-29 | 2016-12-21 | 黄山市七七七电子有限公司 | The manufacturing process of high-reliability high power semiconductor modular chip |
| CN109735227A (en) * | 2019-01-22 | 2019-05-10 | 黄山市七七七电子有限公司 | A kind of environment-friendly type compression joint type silicon chip corrosion barrier protection materials and its production technology |
| CN114050108A (en) * | 2021-09-23 | 2022-02-15 | 黄山市七七七电子有限公司 | Production process of silicon rectifying circular chip with built-in table top by acid etching |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700740A (en) * | 2014-01-10 | 2014-04-02 | 黄山市弘泰电子有限公司 | Manufacturing method of thyristor chip |
| CN103700740B (en) * | 2014-01-10 | 2016-04-13 | 黄山市弘泰电子有限公司 | A kind of manufacture method of thyristor chip |
| CN104241122A (en) * | 2014-09-29 | 2014-12-24 | 广安市嘉乐电子科技有限公司 | Production method for sheet silicon-particle rectifier diodes |
| CN104241122B (en) * | 2014-09-29 | 2017-05-10 | 广安市嘉乐电子科技有限公司 | Production method for sheet silicon-particle rectifier diodes |
| CN106067419A (en) * | 2016-08-22 | 2016-11-02 | 成都众乐泰科技有限公司 | A kind of optimized production process of diode |
| CN106252245A (en) * | 2016-09-29 | 2016-12-21 | 黄山市七七七电子有限公司 | The manufacturing process of high-reliability high power semiconductor modular chip |
| CN109735227A (en) * | 2019-01-22 | 2019-05-10 | 黄山市七七七电子有限公司 | A kind of environment-friendly type compression joint type silicon chip corrosion barrier protection materials and its production technology |
| CN109735227B (en) * | 2019-01-22 | 2021-04-09 | 黄山市七七七电子有限公司 | Environment-friendly crimping type silicon chip corrosion shielding protection material and production process thereof |
| CN114050108A (en) * | 2021-09-23 | 2022-02-15 | 黄山市七七七电子有限公司 | Production process of silicon rectifying circular chip with built-in table top by acid etching |
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| CN102789978B (en) | 2015-06-10 |
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