CN106067419A - A kind of optimized production process of diode - Google Patents
A kind of optimized production process of diode Download PDFInfo
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- CN106067419A CN106067419A CN201610692856.9A CN201610692856A CN106067419A CN 106067419 A CN106067419 A CN 106067419A CN 201610692856 A CN201610692856 A CN 201610692856A CN 106067419 A CN106067419 A CN 106067419A
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- diode
- tube core
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002253 acid Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000005554 pickling Methods 0.000 claims abstract description 12
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000003825 pressing Methods 0.000 claims abstract description 8
- 239000004642 Polyimide Substances 0.000 claims abstract description 7
- 229920001721 polyimide Polymers 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 238000012856 packing Methods 0.000 claims abstract description 4
- 238000013102 re-test Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 229960000583 acetic acid Drugs 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000012362 glacial acetic acid Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001117 sulphuric acid Substances 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 5
- 230000006835 compression Effects 0.000 abstract description 4
- 238000007906 compression Methods 0.000 abstract description 4
- 206010019332 Heat exhaustion Diseases 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000005267 main chain polymer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000035488 systolic blood pressure Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses the optimized production process of a kind of diode, after silicon wafer chip cutting is become hexagonal cell cube pickling, be carried out；Oxidation reaction is carried out at 400 ~ 500 DEG C；Tube core carries out vacuum-sintering at 650 ~ 750 DEG C, carries out plated film after 30 minutes；It is hexagon straight prism by die separation；With the cone mill hornwork at 30 ~ 50 degree of angles, tube core being ground the first inclined-plane, the upper edge on the first inclined-plane is ground the second inclined-plane of same angle the most again；Carrying out pickling in the tube core of well cutting is placed on acid solution, then coating polyimide carries out cured；Carry out mold pressing process, toast at 180 DEG C after mold pressing；Finally products obtained therefrom is carried out surface process, after re-test, carry out finished product packing.The present invention uses the structure of multilamellar compression joint type, reduces the heat exhaustion of tube core, reduces electric leakage, functional；Do not use welding, effectively prevent resistance from increasing；Before tube core vacuum-sintering, carry out pickling, prevent lead-in wire and weld tabs from introducing other impurity elements.
Description
Technical field
The present invention relates to a kind of semiconductor technology, be specifically related to the optimized production process of a kind of diode.
Background technology
Diode is one of the most frequently used electronic component, and the characteristic of its maximum is exactly unilateal conduction, and namely electric current is only
To flow through from diode direction, the effect of diode has rectification circuit, detecting circuit, mu balanced circuit, and various tune
Circuit processed.
Along with diode extensive application commercially, its demand also gets more and more.But it is raw at traditional diode
Production. art also exists a lot of problem, and such as, the damage layer produced when abrasive disc, sandblasting, these damages can cause silicon chip frangible, and meeting
Form diffused channel.And for bigger mechanical damage, not only do not eliminate in corrosion process, can more expand on the contrary, make
Surface is pressure to be greatly reduced.The damage of cutting is the biggest on the impact that chip is pressure；The diode crystal particle shape that traditional method manufactures
Shape is positive truncated rectangular pyramids, angle α=180 ° between N district and P district, and N knot is exactly in the positive truncated rectangular pyramids position near bottom surface,
Time armor coated, it be coated with thickness at this little, easily cause voltage breakdown failure.
Summary of the invention
The technical problem to be solved is that conventional diode production technology exists shortcomings, the diode of gained
Performance is bad, it is therefore intended that provide the optimized production process of a kind of diode, optimizes conventional diode production technology further.
The present invention is achieved through the following technical solutions:
The optimized production process of a kind of diode, comprises the following steps；
(1) silicon wafer chip cutting is become hexagonal cell cube；
(2) after carrying out pickling with mixed acid, then it is carried out with ultrasound wave；
(3), after cleaning, at 400 ~ 500 DEG C, it is passed through oxygen, carries out oxidation reaction；
(4) tube core includes lead-in wire, weld tabs, chip, weld tabs, lead-in wire the most successively, carries out vacuum burning at 650 ~ 750 DEG C
Knot, after sintering 30 minutes, utilizes CVD vapour deposition to carry out plated film；
(5) it is hexagon straight prism by die separation；
(6) first by the cone mill hornwork at 30 ~ 50 degree of angles tube core is ground the first inclined-plane, the most again upper on the first inclined-plane
Along the second inclined-plane that same angle is ground；
(7) carrying out pickling in the tube core of well cutting is placed on acid solution, then coating polyimide carries out cured；
(8) carry out mold pressing process, toast at 180 DEG C after mold pressing；
(9) finally products obtained therefrom is carried out surface process, after re-test, carry out finished product packing.
Wherein, polyimides, is the main chain polymer that contains imide group (-C-N-C-).Polyimides conduct
A kind of special engineered material, has been widely used in fields such as Aeronautics and Astronautics, microelectronics, nanometer, liquid crystal, separation film, laser.Closely
Come, each state all by the research of polyimides, develop and utilize and list one of 21 century most promising engineering plastics in.Polyamides is sub-
Amine, because of its outstanding feature in terms of performance and synthesis, either as structural material or as functional material, it is huge
Application prospect the most sufficiently recognized, be known as the expert of problem " solve ", and think " do not have polyimides the most not
Have the microelectric technique of today ".
The optimized production process of a kind of diode, the mixed acid of described step (2) includes in concentrated sulphuric acid, nitric acid, Fluohydric acid.
One or more.
The optimized production process of a kind of diode, the acid solution in described step (7) includes nitric acid, Fluohydric acid., glacial acetic acid
In one or more.
The optimized production process of a kind of diode, the cone mill hornwork used in described step (6) is 45 degree.
The optimized production process of a kind of diode, the test in described step (9) is diode testing electrical property.
Before tube core sinters, carry out pickling, weld tabs in tube core, lead-in wire and acid reaction can be prevented effectively from, introduce other impurity things
Matter；The chip structure using multilamellar compression joint type then instead of the welded structure that common tube chip is traditional, and due to compression joint type
The existence of multiple structure, solves the heat exhaustion problem of power rectifier die, and rectifier tube chip electric leakage is little, on-state voltage drop is little,
Functional.
After pickling, through high temperature dry the die surfaces of moisture be coated with one layer of silicone rubber make tube core P-N junction and external environment every
Leave, to avoid the surrounding impurities impact on device performance, the effect protected tube core, stablize die surfaces can be acted.
Latex solidified technique purpose: solidification upper glue layer makes silicone rubber center liquor volatilize further, and curable adhesive layer has made and tube core
Strong bonded, makes device have good operating performance and avoids being impacted during molding and the effect that damages.The mesh molded
Be to make tube core and external environment isolate, it is to avoid the erosion of harmful gas, and make any surface finish and there is specific geometry,
Play protection tube core, the surface of stability, fixing tube core lead, improve diode mechanical strength, facilitate the effect that client uses.Become
The purpose of type solidification is that the plastic packaging material to the diode after molding passes through high-temperature baking, to improve the reliability of plastic packaging material.Volatilization
The greasy dirt on surface and the black glue systolic pressure of release, reject defective products, inefficacy pipe, the stability of raising diode in early days.
CVD chemical gaseous phase deposition is the technology for depositing multiple materials being most widely used in semi-conductor industry, bag
Include large-scale insulant, most metals material and metal alloy compositions.In theory, it is the simplest: two
Planting or two or more gaseous starting materials imports in a reative cell, then there is chemical reaction in them each other, is formed
A kind of new material, deposits in wafer surface.
Further, the appearance of multi-angle collocation grinding technics application technology so that chip table has more perfect
Multi-angle table top moulding, increase effectively power rectifier die and carries the ability of more high working voltage.Breach completely high pressure,
The manufacture bottleneck of big electric current ZP chip.
Wherein, PN junction edge surface is ground an oblique angle, to reduce surface field intensity, make puncturing of PN junction first send out
Raw in vivo rather than surface.The feature of orthogonal rake: angle θ grinds the least, sruface charge sector width draws the longest, surface electricity
Field intensity is the least, L > d, voltage breakdown first occurs at internal；Surface maximum field intensity is not on PN junction, but at low impurity
Concentration is on one side.Angle, θ is the least, from PN junction more away from.Therefore, orthogonal rake is favourable to space-charge region along the broadening on surface, because of
And surface field intensity can be reduced, improve surface pressure.The angle lap angle that inclined-plane size is reduced to high concentration direction by low concentration
It is referred to as negative bevel.For negative bevel, between 90～45 degree, with θ diminish surface field intensity increase.At 45 degree, table
Face electric field intensity reaches maximum.Between 0 ~ 45 degree, diminishing with θ, surface maximum field intensity declines.Therefore high-voltage tube must grind
Little negative bevel.And surface maximum field intensity is not on PN junction but in high concentration side.
Further, the detection of general-purpose diode, including detector diode, commutation diode, damper diode, switch two
Pole pipe, fly-wheel diode, be the semiconductor device being made up of a PN junction, have unilateal conduction characteristic.By examining with circuit tester
Survey its forward and reverse resistance value, the electrode of diode can be determined, also can estimate whether diode damages.
The present invention compared with prior art, has such advantages as and beneficial effect:
1, the optimized production process of a kind of diode of the present invention, the structure of multilamellar compression joint type, reduces the heat exhaustion problem of tube core, subtracts
Few electric leakage, functional.
2, the optimized production process of a kind of diode of the present invention, does not use welding, effectively prevents resistance from increasing；
3, the optimized production process of a kind of diode of the present invention, carries out pickling before tube core vacuum-sintering, prevents lead-in wire and weld tabs
Introduce other impurity elements.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing being further appreciated by the embodiment of the present invention, constitutes of the application
Point, it is not intended that the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is present configuration schematic diagram.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with embodiment and accompanying drawing, to this
Invention is described in further detail, and the exemplary embodiment of the present invention and explanation thereof are only used for explaining the present invention, do not make
For limitation of the invention.
Embodiment
As it is shown in figure 1, the optimized production process of a kind of diode of the present invention, comprise the following steps；
(1) silicon wafer chip cutting is become hexagonal cell cube；
(2) after carrying out pickling with the mixed acid solution of concentrated sulphuric acid, nitric acid and Fluohydric acid., then it is carried out with ultrasound wave；Chip
(3), after cleaning, at 470 DEG C, it is passed through oxygen, carries out oxidation reaction；
(4) tube core includes lead-in wire, weld tabs, chip, weld tabs, lead-in wire the most successively, carries out vacuum-sintering at 700 DEG C, burns
After tying 30 minutes, CVD vapour deposition is utilized to carry out plated film；
(5) it is hexagon straight prism by die separation；
(6) tube core is ground the first inclined-plane, the most again on the upper edge on the first inclined-plane by the cone mill hornwork first by 45 degree of angles
Second inclined-plane of same angle is ground；
(7) tube core of well cutting is placed in the acid solution of nitric acid, Fluohydric acid., glacial acetic acid and carries out pickling, be then coated with polyamides sub-
Amine carries out cured；
(8) carry out mold pressing process, toast at 180 DEG C after mold pressing；
(9) finally products obtained therefrom is carried out surface process, after re-test, carry out finished product packing.
Above-described detailed description of the invention, has been carried out the purpose of the present invention, technical scheme and beneficial effect further
Describe in detail, be it should be understood that the detailed description of the invention that the foregoing is only the present invention, be not intended to limit the present invention
Protection domain, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, all should comprise
Within protection scope of the present invention.
Claims (5)
1. the optimized production process of a diode, it is characterised in that comprise the following steps；
(1) silicon wafer chip cutting is become hexagonal cell cube；
(2) after carrying out pickling with mixed acid, then it is carried out with ultrasound wave；
(3), after cleaning, at 400 ~ 500 DEG C, it is passed through oxygen, carries out oxidation reaction；
(4) tube core includes lead-in wire, weld tabs, chip, weld tabs, lead-in wire the most successively, carries out vacuum burning at 650 ~ 750 DEG C
Knot, after sintering 30 minutes, utilizes CVD vapour deposition to carry out plated film；
(5) it is hexagon straight prism by die separation；
(6) first by the cone mill hornwork at 30 ~ 50 degree of angles tube core is ground the first inclined-plane, the most again upper on the first inclined-plane
Along the second inclined-plane that same angle is ground；
(7) carrying out pickling in the tube core of well cutting is placed on acid solution, then coating polyimide carries out cured；
(8) carry out mold pressing process, toast at 180 DEG C after mold pressing；
(9) finally products obtained therefrom is carried out surface process, after re-test, carry out finished product packing.
The optimized production process of a kind of diode the most according to claim 1, it is characterised in that mixing of described step (2)
Close acid and include one or more in concentrated sulphuric acid, nitric acid, Fluohydric acid..
The optimized production process of a kind of diode the most according to claim 1, it is characterised in that in described step (7)
Acid solution includes one or more in nitric acid, Fluohydric acid., glacial acetic acid.
The optimized production process of a kind of diode the most according to claim 1, it is characterised in that described step makes in (6)
Cone mill hornwork be 45 degree.
The optimized production process of a kind of diode the most according to claim 1, it is characterised in that in described step (9)
Test is diode testing electrical property.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610692856.9A CN106067419A (en) | 2016-08-22 | 2016-08-22 | A kind of optimized production process of diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610692856.9A CN106067419A (en) | 2016-08-22 | 2016-08-22 | A kind of optimized production process of diode |
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| Publication Number | Publication Date |
|---|---|
| CN106067419A true CN106067419A (en) | 2016-11-02 |
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ID=57206938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610692856.9A Pending CN106067419A (en) | 2016-08-22 | 2016-08-22 | A kind of optimized production process of diode |
Country Status (1)
| Country | Link |
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| CN (1) | CN106067419A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830577A (en) * | 2019-01-18 | 2019-05-31 | 重庆市妙格科技有限公司 | A kind of manufacturing method of high quality light-emitting diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5040080A (en) * | 1973-07-16 | 1975-04-12 | ||
| CN102789978A (en) * | 2012-07-26 | 2012-11-21 | 黄山市七七七电子有限公司 | Production process of ordinary electric rectifier diode chip |
| CN104835894A (en) * | 2014-02-12 | 2015-08-12 | 智威科技股份有限公司 | Semiconductor diode chip and manufacturing method thereof |
-
2016
- 2016-08-22 CN CN201610692856.9A patent/CN106067419A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5040080A (en) * | 1973-07-16 | 1975-04-12 | ||
| CN102789978A (en) * | 2012-07-26 | 2012-11-21 | 黄山市七七七电子有限公司 | Production process of ordinary electric rectifier diode chip |
| CN104835894A (en) * | 2014-02-12 | 2015-08-12 | 智威科技股份有限公司 | Semiconductor diode chip and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830577A (en) * | 2019-01-18 | 2019-05-31 | 重庆市妙格科技有限公司 | A kind of manufacturing method of high quality light-emitting diode |
| CN109830577B (en) * | 2019-01-18 | 2021-06-15 | 深圳市广盛浩科技有限公司 | Manufacturing method of high-quality light-emitting diode |
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