CN104218031B - 母排联接式高性能igbt模块及其制作方法 - Google Patents

母排联接式高性能igbt模块及其制作方法 Download PDF

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CN104218031B
CN104218031B CN201310217477.0A CN201310217477A CN104218031B CN 104218031 B CN104218031 B CN 104218031B CN 201310217477 A CN201310217477 A CN 201310217477A CN 104218031 B CN104218031 B CN 104218031B
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颜家圣
陈崇林
邢雁
孙亚男
王维
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HUBEI TECH SEMICONDUCTORS Co Ltd
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Abstract

本发明的名称为母排联接式高性能IGBT模块及其制作方法。属于功率半导体器件和电力电子技术领域。它主要是解决现有铝丝键合存在芯片和联接线间的接触面积小、IGBT器件的浪涌电流能力和过载能力不够高、器件工作可靠性不够高的问题。它的主要特征是：包括外壳、底板、电极和封装在外壳内的半导体芯片、DBC、电极、母排、钼片、焊料等。所述的芯片、DBC、电极相互间是通过母排联接的。母排联接方法是将各部件依次组装在专用的制具中，并紧固，在真空炉中焊接而成。本发明能显著提高IGBT器件的频率特性，改善器件的开关性能，对高频、大功率、高可靠性半导体器件非常适用。相比传统技术，可节省投资，缩短生产加工周期。

Description

母排联接式高性能IGBT模块及其制作方法
技术领域
本发明属于半导体器件和电力电子技术领域。具体涉及一种功率半导体器件，主要应用于大功率变流电源，如变频器、电机软起动器、牵引电源、UPS等。
背景技术
IGBT模块是一种可自关断的新型功率半导体器件，将一只、或两只、或多只IGBT芯片和其它半导体器件芯片封装在一个外壳中，其核心部件是IGBT芯片。现有IGBT模块结构如图2所示，包括外壳、底板6、DBC板（陶瓷双面覆铜板）5、电极1、铝丝8、10、钼片3、IGBT（绝缘栅双极晶体管）芯片9、栅极引线7，其中IGBT芯片9、DBC板5、电极1相互间是通过铝丝8、10联接的。IGBT模块通常制造过程如图4所示，即：原材料检查、基板装配、真空烧结、铝丝键合、端子目排装配、真空烧结或回流焊接、外壳安装、灌胶保护、高温老化、端子成型、成品测试和标示包装。基板装配、真空烧结是依次将芯片-焊片-DBC板组装在特定的制具中，再放入真空炉中焊接成芯片组件。铝丝键合、端子目排装配、真空烧结或回流焊接是按照电路拓扑在芯片和DBC之间打铝丝联接——即键合，端子目排装配是将电极、焊片和打好铝丝的芯片组件组装固定，再送入真空炉或链式炉中进行高温焊接成电路板。外壳安装、灌胶保护是装底板、外壳和其它结构件，并注入绝缘填充胶链式炉焊接较简单、效率高，通常加入氢气保护能提高焊接质量。真空焊接的空洞率更低。
上述方法和结构是目前典型的IGBT封装技术，过程较为简单、可行，成本较低，生产的产品和所需设备、技术都较成熟，得到普遍应用。但由于IGBT芯片9、DBC板5、电极1相互间是通过铝丝8、10联接的，因而存在芯片和联接线间的接触不够充分、IGBT器件的浪涌电流能力和过载能力不够高、器件工作可靠性不够高的问题。
发明内容
本发明的目的是提供一种使芯片和联接线间具有更大的接触面积且稳定可靠，从而能明显提高IGBT器件的浪涌电流能力和过载能力、提高器件工作的可靠性、改善器件开关性能的母排联接式高性能IGBT模块及其制作方法。
本发明母排联接式高性能IGBT模块的技术解决方案是：一种母排联接式高性能IGBT模块，包括外壳、底板、DBC板、电极、半导体芯片、栅极引线，电极固定在DBC板上，DBC板固定在底板，半导体芯片焊接在DBC板上，其特征在于：所述的半导体芯片、DBC板、电极相互间是通过母排联接的。
本发明母排联接式高性能IGBT模块的技术解决方案中所述的半导体芯片与母排之间还焊接有钼片。
本发明母排联接式高性能IGBT模块的技术解决方案中所述的半导体芯片可以是IGBT芯片，也可以是整流管芯片、晶闸管芯片或其它半导体芯片。
本发明母排联接式高性能IGBT模块的技术解决方案中所述的母排材料是铜或铜合金。
本发明母排联接式高性能IGBT模块的技术解决方案中所述的外壳内灌注硅凝胶。
本发明制作母排联接式高性能IGBT模块方法的技术解决方案是：一种制作母排联接式高性能IGBT模块的方法，其特征在于包括以下步骤：
1）原材料检查：分别检查DBC板、母排、电极、半导体芯片、底板、外壳；
2）DBC版制作：切割出适当尺寸的DBC板，按照电路拓扑，在DBC板的表面刻蚀出需要的版图，确定芯片、电极的位置和电路；
3）端子母排装配：将半导体芯片、焊料、DBC板、母排、电极等部件依次叠放在专用的制具中，并定位、紧固；
4）真空烧结或回流焊接：将组装好的制具逐件放入真空炉中，均匀摆放好；在焊接过程第一阶段，升温至焊接温度的过程中需反复抽真空和充氮气，当温度接近所规定的温度时，充入氢气或甲酸气至与外界压力持平；在焊接过程第二阶段，在220~350°C范围内保持不少于5分钟的恒温，之后进行焊接，焊毕后抽真空；在焊接过程第三阶段，抽真空后以不高于每分钟15°C降温至室温，降温过程中充入氮气。各阶段真空低于2×10-3Pa；
或者将组装好的制具依次放入在隧道炉的进口，将隧道炉履带的运转速度设定为约每秒0.004米，控制隧道炉焊接段温度在220~350°C范围内，在焊接全程中需通氢气保护，进行回流焊接，从隧道炉出口取出制具；
焊接完成后，拆开制具，取出电路板组件；用X光扫描仪或超声波扫描电镜对焊接好的电路板组件进行探测，剔除空洞率不符合要求的制品；
5）外壳安装：将电路板组件、底板、塑料外壳和其它结构件按要求组装、整理；
6）灌胶保护：通过注入口，向电路组件中灌注硅凝胶；
7）高温老化：在120~160°C温度范围内，进行8~24小时的老化；
8）端子成型：将引出的电极端子折弯、整形、固定；
9）成品测试和标示包装：成品测试后进行标示包装。
本发明由于芯片采用母排联接，较之传统的铝丝键合，使半导体芯片和联接线间具有更大的接触面积且稳定可靠，能明显提高IGBT器件的浪涌电流能力和过载能力，提高器件工作的可靠性。同时由于母排为单体而铝丝通常需要多股并联，线路自身的寄生电感量很微小，能显著提高IGBT器件的频率特性，改善器件的开关性能。因此，本发明对高频、大功率、高可靠性半导体器件非常适用。
本发明由于比传统方法减掉了铝丝键合环节及相关过程，可将两次组装焊接及铝丝键合整个过程合并为一次组装焊接，节省了投资，缩短了生产加工周期。
本发明涉及的制作方法和技术，不仅适用于IGBT芯片和模块，也适用于其它半导体芯片和模块，如整流管、晶闸管等。
附图说明
图1是母排联接式高性能IGBT模块内部结构图。
图2是粗铝丝键合IGBT模块内部结构图。
图3是母排-钼片-芯片焊接结构图。
图4是粗铝丝键合IGBT模块的工艺流程图。
图5是母排联接式高性能IGBT模块的工艺流程图。
图6是两单元IGBT样品外型图。
具体实施方式
下面以两单元的IGBT模块为例，介绍母排联接式高性能IGBT模块及其制方法：
两单元的母排联接式高性能IGBT模块包括外壳13、底板6、DBC板5、电极1、半导体芯片4、模块栅极与IGBT芯片栅极、辅助源极与芯片源极之间的栅极引线7和母排2。电极1为3个，分别固定在1块（或多块相互分离的）DBC板5上。1块（或多块）DBC板5均焊接在底板6上，与现有技术相同。半导体芯片4为IGBT芯片，焊接在DBC板5上。半导体芯片也可以是整流管芯片、晶闸管芯片或其它半导体芯片。母排2材料是铜或铜合金，基本形状为具有较好韧性的带状，根据空间和电路走向作折弯处理。半导体芯片4、DBC板5、电极1相互间是通过母排2联接的。小功率的半导体芯片和母排可以直接焊接，即半导体芯片-焊片-母排。大功率的半导体芯片则不宜直接和母排焊接，因为半导体芯片通常为硅材料，母排通常为铜材，两者的热膨胀系数差距很大，直接焊接会在半导体芯片内产生不易消除的应力，且由于半导体器件工作时必然产生冷热循环，会加剧这些应力的生长，从而导致器件疲劳、失效。解决办法是在半导体芯片4表面加入钼片3，即依次按半导体芯片-焊片-钼片-焊片-母排组装在一起并固定，再焊接。通过注入口，向外壳13内电路组件中灌注硅凝胶。栅极片12和源极片形状相同，固定在外壳中，通过接插件与外电路连接。组合螺钉14用于紧固电极与外接电路。
两单元的母排联接式高性能IGBT模块的制作方法包括以下步骤：
1）原材料检查：分别检查DBC板5、母排、电极1、半导体芯片、底板6、外壳13；
2）DBC版5制作：切割出适当尺寸的DBC板，按照电路拓扑，在DBC板的表面刻蚀出需要的版图，确定芯片、电极的位置和电路；
3）端子母排装配：将半导体芯片、焊料11、DBC板5、母排2、电极1等部件依次叠放在专用的制具中，并定位、紧固；
4）真空烧结或回流焊接：将组装好的制具逐件放入真空炉中，均匀摆放好；在焊接过程第一阶段，升温至焊接温度的过程中需反复抽真空和充氮气，当温度接近所规定的温度时，充入氢气或甲酸气至与外界压力持平；在焊接过程第二阶段，在220~350°C范围内保持不少于5分钟的恒温，之后进行焊接，焊毕后抽真空；在焊接过程第三阶段，抽真空后以不高于每分钟15°C降温至室温，降温过程中充入氮气。各阶段真空低于2×10-3Pa；
或者将组装好的制具依次放入在隧道炉的进口，将隧道炉履带的运转速度设定为约每秒0.004米，控制隧道炉焊接段温度在220~350°C范围内，在焊接全程中需通氢气保护，进行回流焊接，从隧道炉出口取出制具；
焊接完成后，拆开制具，取出电路板组件；用X光扫描仪或超声波扫描电镜对焊接好的电路板组件进行探测，剔除空洞率不符合要求的制品；
5）外壳安装：将电路板组件、底板、塑料外壳和其它结构件按要求组装、整理；
6）灌胶保护：通过注入口，向电路组件中灌注硅凝胶；
7）高温老化：在120~160°C温度范围内，进行8~24小时的老化；
8）端子成型：将引出的电极端子折弯、整形、固定；
9）成品测试和标示包装：成品测试后进行标示包装。

Claims (4)

1.一种母排联接式高性能IGBT模块，包括外壳（13）、底板（6）、DBC板（5）、电极（1）、半导体芯片（4）、栅极引线（7），电极（1）固定在DBC板（5）上，DBC板（5）固定在底板（6），半导体芯片焊接在DBC板（5）上，其特征在于：所述的半导体芯片（4）、DBC板（5）、电极（1）相互间是通过母排（2）联接的；所述的半导体芯片（4）与母排（2）之间还焊接有钼片（3）；所述的钼片（3）与半导体芯片（4）之间是通过焊料（11）经真空烧结或回流焊接连接的；DBC板（5）与半导体芯片和底板（6）之间是通过焊料（11）经真空烧结或回流焊接连接的；真空烧结：在焊接过程第一阶段，升温至焊接温度的过程中需反复抽真空和充氮气，当温度接近所规定的温度时，充入氢气或甲酸气至与外界压力持平；在焊接过程第二阶段，在220~350°C范围内保持不少于5分钟的恒温，之后进行焊接，焊毕后抽真空；在焊接过程第三阶段，抽真空后以不高于每分钟15°C降温至室温，降温过程中充入氮气，各阶段真空低于2×10-3Pa；回流焊接：将隧道炉履带的运转速度设定为每秒0.004米，控制隧道炉焊接段温度在220~350°C范围内，在焊接全程中需通氢气保护，进行回流焊接。
2.根据权利要求1所述的母排联接式高性能IGBT模块，其特征是：所述的半导体芯片（4）是IGBT芯片、整流管芯片、晶闸管芯片或其它半导体芯片。
3.根据权利要求1或2所述的母排联接式高性能IGBT模块，其特征是：所述的外壳（13）内灌注硅凝胶。
4.一种制作母排联接式高性能IGBT模块的方法，其特征在于包括以下步骤：
1）原材料检查：分别检查DBC板（5）、母排、电极（1）、半导体芯片、底板（6）、外壳（13）；
2）DBC板（5）制作：切割出适当尺寸的DBC板，按照电路拓扑，在DBC板的表面刻蚀出需要的版图，确定芯片、电极的位置和电路；
3）端子母排装配：将半导体芯片、焊料（11）、DBC板（5）、母排（2）、电极（1）等部件依次叠放在专用的制具中，并定位、紧固；
4）真空烧结或回流焊接：将组装好的制具逐件放入真空炉中，均匀摆放好；在焊接过程第一阶段，升温至焊接温度的过程中需反复抽真空和充氮气，当温度接近所规定的温度时，充入氢气或甲酸气至与外界压力持平；在焊接过程第二阶段，在220~350°C范围内保持不少于5分钟的恒温，之后进行焊接，焊毕后抽真空；在焊接过程第三阶段，抽真空后以不高于每分钟15°C降温至室温，降温过程中充入氮气；各阶段真空低于2×10-3Pa；
或者将组装好的制具依次放入在隧道炉的进口，将隧道炉履带的运转速度设定为每秒0.004米，控制隧道炉焊接段温度在220~350°C范围内，在焊接全程中需通氢气保护，进行回流焊接，从隧道炉出口取出制具；
焊接完成后，拆开制具，取出电路板组件；用X光扫描仪或超声波扫描电镜对焊接好的电路板组件进行探测，剔除空洞率不符合要求的制品；
5）外壳安装：将电路板组件、底板、塑料外壳和其它结构件按要求组装、整理；
6）灌胶保护：通过注入口，向电路组件中灌注硅凝胶；
7）高温老化：在120~160°C温度范围内，进行8~24小时的老化；
8）端子成型：将引出的电极端子折弯、整形、固定；
9）成品测试和标示包装：成品测试后进行标示包装。
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