CN104175409B - A kind of charged multi-line cutting method of silicon chip and charged Multi-wire cutting device - Google Patents
A kind of charged multi-line cutting method of silicon chip and charged Multi-wire cutting device Download PDFInfo
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- CN104175409B CN104175409B CN201410432029.7A CN201410432029A CN104175409B CN 104175409 B CN104175409 B CN 104175409B CN 201410432029 A CN201410432029 A CN 201410432029A CN 104175409 B CN104175409 B CN 104175409B
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Abstract
The invention discloses the charged multi-line cutting method of a kind of silicon chip, comprise step: one, silicon rod is bonding, process is as follows: glass plate is fixed, conductive tape is fixed and silicon rod is fixed; Two, dc source wiring: conductive tape is connected with DC power cathode, and the actinobacillus wheel of cable pulling-pushing device in multi-line cutting machine or take-up pulley are connected with DC power anode; Three, silicon rod tape TURP cuts: connect dc source, adopts multi-line cutting machine to treat cutting silicon rod cutting; This charged multi-line cutting method step is simple and realization is convenient, effectively improves Multi-wire wafer cutting efficiency by charged cutting.Meanwhile, the invention also discloses the charged Multi-wire cutting device of a kind of silicon chip, comprise dc source, conductive tape and treat the multi-line cutting machine that cutting silicon rod carries out cutting; Conductive tape is bonded and fixed in the middle part of the bottom surface of silicon rod to be cut, and this apparatus structure is simple, reasonable in design and input cost is lower, it is easy and simple to handle to use, and simultaneously cutting efficiency is high and cut quality good.
Description
Technical field
The invention belongs to silicon chip line cutting technology field, especially relate to the charged multi-line cutting method of a kind of silicon chip and charged Multi-wire cutting device.
Background technology
Multi-wire saw is one of very effective method of cutting large diameter silicon monocrystal rod.The multi-line cutting machine (abbreviation scroll saw) of being a dark horse in recent years is with its high production efficiency and piece rate, replace inner circle cutting machine gradually at large-diameter silicon wafer manufacture field, institute's pellet has the features such as flexibility is little, angularity is little, the depth of parallelism is good, gross thickness tolerance (TTV) discreteness is little, cutting edge cutting loss is little, surface damage layer is shallow, wafer surface roughness is little; Its cutting material cover all kinds semi-conducting material, as silicon, germanium, lithium niobate, GaAs, indium phosphide, synthetic cut stone, carborundum etc., therefore the application of multi-wire saw technology is also more and more extensive.Nowadays, numerical control multi-line cutting machine instead of traditional inner circle cutting gradually, becomes the major way of silicon chip cutting processing.
When reality carries out multi-wire saw to silicon chip, the steel wire of high-speed motion is utilized to drive abrasive material to carry out attrition process to reach the object of cutting silicon wafer, steel wire to be fixed on sheave and to form gauze, silicon rod to be cut (i.e. processing work) is fixing on the table, and realizes workpiece feeding by worktable lifting.Wherein, the quantity of workbench is generally two, and two workbench are respectively upper table and are positioned at the lower table below described upper table.Must use a kind of mixed grinding material (being mainly silicon carbide abrasive) with mobility in multi-wire saw, this mixed grinding material is the cutting mortar of usual indication.The main component of this cutting mortar is suspension and abrasive material (also claiming sword material), and the abrasive material adopted is SiC, aluminium oxide, zirconium etc., and the main component in suspension is polyethylene glycol, surfactant etc.In actual cutting process, cutting mortar is taken to cutting area by reciprocating steel wire, and the cutting mortar be brought into determines cut quality and the cutting power of silicon chip; And steel wire grain type with contained abrasive material in cutting mortar and granularity, be the key determining cutting material finished product sheet any surface finish degree and cutting power.
During owing to carrying out multi-wire saw to silicon chip, need steel wire to bring cutting mortar (mainly cutting the cutting blade material in mortar) into rub to the silicon crystal that needs are processed, thus crystalline silicon rod is cut into the silicon chip required for solar energy, semiconductor.In order to ensure higher profit, the production capacity improving machine is one of important measures.
At present, the time of multi-wire saw crystalline silicon rod is longer, and such as the clipping time of 8 cun of silicon rods is substantially at 8 ~ 9 hours.In order to improve production capacity, the cutting efficiency of multi-line cutting machine will be improved, requiring that the output within the unit interval is more.At present, the major measure improving multi-line cutting machine cutting efficiency comprises following several: the movement velocity the first, improving multi-line cutting machine leading screw, and wherein leading screw is the mechanism driving worktable lifting; The second, increase adopt the quantity of multi-line cutting machine; Three, to increase in cutting process adopt the consumption of consumptive material (namely cutting mortar), to shorten clipping time.Wherein, adopt the movement velocity that improves multi-line cutting machine leading screw as when improving the mode of production capacity, due to the raising along with leading screw speed, the impulsive force to steel wire on sheave certainly will be increased, steel wire is swung in the fluting of sheave.And the sheave used in general Linear cut is mainly at master metal Kun surface coating one deck epoxy resin; cutting is carried out at epoxy resin surface; and meet the requirements of separation; because of the characteristic of epoxy resin, can be subject to the pressure that leading screw declines when cutting, therefore steel wire can be exerted pressure downwards to wire casing; make being subjected to displacement of gauze; not only affect cut quality, and owing to shutting down, gauze is resetted, make cutting efficiency significantly reduce on the contrary.In addition, adopt when increasing mode that institute in the quantity of multi-line cutting machine and cutting process adopts the consumption of consumptive material (namely cutting mortar) as raising production capacity, all will drop into substantial contribution, production cost significantly increases.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned deficiency of the prior art, provide a kind of method step simple, realize convenient and effectively improved the charged multi-line cutting method of silicon chip silicon chip of Multi-wire wafer cutting efficiency by charged cutting.
For solving the problems of the technologies described above, the technical solution used in the present invention is: the charged multi-line cutting method of a kind of silicon chip, is characterized in that the method comprises the following steps:
Step one, silicon rod are bonding: be fixed on the workbench of multi-line cutting machine by silicon rod to be cut, fixation procedure is as follows:
Step 101, glass plate are fixed: be bonded and fixed to by glass plate on described workbench;
Step 102, conductive tape are fixed: in a step 101 described glass plate smears one deck bonded adhesives, and be bonded and fixed on glass plate by conductive tape;
Step 103, silicon rod are fixed: be bonded and fixed on glass plate by silicon rod to be cut, and make conductive tape described in step 102 be bonded and fixed in the middle part of the bottom surface of silicon rod to be cut;
Step 2, dc source wiring: after silicon rod to be cut described in step 103 fixedly completes, conductive tape is connected with the negative pole of dc source, and the actinobacillus wheel of cable pulling-pushing device in described multi-line cutting machine or take-up pulley are connected with the positive pole of dc source; Described cable pulling-pushing device is mechanism steel wire being carried out to folding and unfolding;
Step 3, silicon rod tape TURP cut: connect dc source, adopt described multi-line cutting machine to treat cutting silicon rod cutting; In cutting process, described silicon rod to be cut and steel wire are all in electriferous state.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: the voltage of dc source described in step 2 is 35V ~ 45V.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: the width of conductive tape described in step 102 is 3mm ~ 10mm and its thickness is less than 0.5mm.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: conductive tape described in step 102 is two-sided conductive tape.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: conductive tape described in step 102 is positioned at immediately below silicon rod to be cut.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: on glass plate described in step 102 the quantity of bonding conductive tape be many, many described conductive tapes are parallel laying; The quantity of silicon rod to be cut described in step 103 is multiple, and the quantity of many described conductive tapes is identical with the quantity of multiple described silicon rod to be cut, and many described conductive tapes are bonded and fixed in the middle part of the bottom surface of multiple described silicon rod to be cut respectively; When carrying out energising wiring in step 2, many described conductive tapes are all connected with the negative pole of dc source; Carry out silicon rod tape TURP in step 3 when cutting, adopt described multi-line cutting machine synchronously to cut multiple described silicon rod to be cut.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, it is characterized in that: multi-line cutting machine described in step one comprises frame and is arranged on the cutting chamber in described frame, described workbench is driven by lift drive mechanism and is elevated, described workbench and described lift drive mechanism are in transmission connection, and described lift drive mechanism is arranged in described cutting chamber; Be provided with two guide wheels be positioned in same level in described cutting chamber, the structure of two described guide wheels is all identical with size; Cable pulling-pushing device described in step 2 is arranged in described frame, described cable pulling-pushing device comprises actinobacillus wheel and take-up pulley, described steel wire to be wrapped on two described guide wheels and to form horizontal resection gauze between two described guide wheel, is cutting area between two described guide wheels; Described workbench be between two described guide wheels above upper table and/or between two described guide wheels below lower table; Cutting mortar is sprayed onto the online cutting mortar nozzle of described horizontal cut line built with cutting mortar or being provided with by described cutting chamber; When described cutting chamber is equipped with cutting mortar, be also provided with in described cutting chamber to fill the agitator that stirs of cutting mortar, and described horizontal resection gauze is soaked in the interior cutting mortar filled of described cutting chamber; Glass plate described in step 101 is bonded and fixed to below upper table or above described lower table.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: carry out silicon rod tape TURP in step 3 when cutting, the Trace speed of described steel wire is 9m/s ~ 11m/s; The mixing speed of described agitator is 600rmp ~ 1500rmp.
Simultaneously, the invention also discloses a kind of structure simple, reasonable in design, use easy and simple to handle and the charged Multi-wire cutting device of silicon chip that cutting efficiency is high, result of use is good, it is characterized in that: comprise dc source, the conductive tape be connected with the negative pole of dc source and treat the multi-line cutting machine that cutting silicon rod carries out cutting; Described conductive tape is bonded and fixed in the middle part of the bottom surface of silicon rod to be cut, the workbench of described multi-line cutting machine is adhesively fixed with glass plate, described glass plate is coated with one deck first bonded adhesives coating, described conductive tape is bonded and fixed in the first bonded adhesives coating that glass plate is smeared, and in described multi-line cutting machine, the actinobacillus wheel of cable pulling-pushing device or take-up pulley are connected with the positive pole of dc source.
The charged Multi-wire cutting device of above-mentioned a kind of silicon chip, is characterized in that: described conductive tape, actinobacillus wheel and be all connected by cable between take-up pulley with dc source, and the voltage of described dc source is 35V ~ 45V.
The present invention compared with prior art has the following advantages:
1, method step simple, operate simple and easy and realize convenient.
2, input cost is lower, only need adopt conductive tape, and on existing multi-line cutting machine, sets up a dc source again can realize, and without the need to adopting miscellaneous equipment again, thus equipment investment cost is lower.In addition, operating process is simple and easy, without the need to making any adjustments the cutting method of existing multi-line cutting machine, only need adjust the sizing process of silicon rod to be cut before multi-wire saw, and adjust considerably less, only need be adhesively fixed on silicon rod ground to be cut conductive tape, and conductive tape is connected with dc source with take-up pulley or actinobacillus wheel, be easy to grasp, require very low to the professional standards of operating personnel, input manpower and materials cost is very low.Thus, the present invention only increases dc source, conductive tape and cable.
3, the direct current power source voltage adopted is 35V ~ 45V, and voltage is lower, and thus processing safety is higher.
4, the charged cutting of silicon chip realizes convenient, makes silicon rod to be cut be in electriferous state by the conductive tape connected with dc source, makes incisory steel wire be in electriferous state, easy-to-connect by the actinobacillus wheel that connects with dc source or take-up pulley.
5, good and the cutting efficiency of result of use significantly improves, principle due to multi-wire saw utilizes the steel wire of high-speed motion to drive abrasive material to carry out the object that attrition process reaches cutting silicon wafer, thus the ability of steel wire band sand determines cutting efficiency, and adopt the present invention to treat cutting silicon rod when carrying out charged multi-wire saw, because in cutting process, steel wire is in electriferous state, such band sand ability that can increase substantially steel wire, that is on steel wire the amount with abrasive material significantly increase, thus the efficiency of multi-wire saw can be increased substantially, and cutting efficiency improves 10% ~ 15%, thus the present invention is not increasing production cost and under ensureing the prerequisite of product cut quality, effectively can shorten clipping time, and enhance productivity, thus reach the object improving output.On the other hand, during silicon chip cutting, owing to passing into direct current between steel wire and silicon rod to be cut, added direct current energy effectively improves the cutting power of cutting mortar, thus significantly shortens clipping time.Thus, the present invention effectively can improve the multi-wire saw efficiency of silicon chip by charged cutting.
6, due to after adopted cutting mortar stirs, abrasive material (as carborundum) in cutting mortar self can be with a certain amount of negative electrical charge, like this in cutting process, as passed into direct current again between steel wire and silicon rod to be cut, under band electro ultrafiltration, the cutting power of cutting mortar can significantly improve.
7, cut quality is effectively improved, owing to passing into direct current between steel wire and silicon rod to be cut, added direct current energy effectively improves the cutting power of cutting mortar, not only effectively improve cutting efficiency like this, and significantly can improve cut quality, cut and form the cutting waste paper (cut of silicon chip, piebald etc.) rate is lower than 1%, there is high finished product rate, and cutting forms gross thickness error (TTV) < 15 μm of silicon chip, center thickness error (TV) is < 10 μm, and angularity (Warp) and the flexibility (Bow) of cutting formation silicon chip all meet solar energy-level silicon wafer processing request.
8, in multi-wire saw process, adopt the use amount of consumptive material (specifically refer to cutting mortar) to have not increase, and use the effective length of steel wire to reduce, when steel wire Trace speed is constant, improve cutting efficiency, just can the actual use length of corresponding minimizing steel wire.
9, actual mechanical process is easy, does not make larger change to the method that existing Multi-wire wafer cuts, and only need finely tune sizing operation (i.e. the operation that is adhesively fixed of silicon rod to be cut), and sizing operation and Linear cut operation, operate all very simple.
10, the charged Multi-wire cutting device structure adopted is simple, reasonable in design, use easy and simple to handle and cutting efficiency is high, result of use good, only need on existing multi-line cutting machine, increase dc source and complete wiring, thus very little to the adjustment of existing multi-line cutting machine, input equipment cost is very low.
11, practical value is high, practical and prospect of promoting the use of is extensive, widely applicable, is applicable to the Multi-wire wafer cutting of monocrystalline silicon, polysilicon, and is particularly useful for the cutting of large scale silicon rod.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the method flow block diagram of the present invention when carrying out charged multi-wire saw.
Fig. 2 is the adhering state schematic diagram of the present invention's silicon rod when carrying out charged multi-wire saw.
Fig. 3 adopts by the present invention the using state reference diagram of charged Multi-wire cutting device.
Fig. 4 adopts by the present invention the structural representation of cutting chamber in charged Multi-wire cutting device.
The cut state schematic diagram that Fig. 5 is the present invention when adopting charged Multi-wire cutting device to cut two silicon rods simultaneously.
Description of reference numerals:
1-silicon rod to be cut; 2-glass plate; 3-conductive tape;
4-dc source; 5-actinobacillus wheel; 6-steel wire;
7-guide wheel; 8-take-up pulley; 9-upper table;
10-1-the first bonded adhesives coating; 10-2-the second bonded adhesives coating; 11-cable;
12-cutting chamber; 13-bonding plate;
14-tension detect and guiding mechanism.
Detailed description of the invention
The charged multi-line cutting method of a kind of silicon chip as shown in Figure 1, comprises the following steps:
Step one, silicon rod are bonding: as shown in Figure 2, and be fixed on the workbench of multi-line cutting machine by silicon rod 1 to be cut, fixation procedure is as follows:
Step 101, glass plate are fixed: be bonded and fixed on described workbench by glass plate 2.
Step 102, conductive tape are fixed: in a step 101 described glass plate 2 smears one deck bonded adhesives, and be bonded and fixed on glass plate 2 by conductive tape 3.
Step 103, silicon rod are fixed: be bonded and fixed on glass plate 2 by silicon rod 1 to be cut, and conductive tape 3 described in step 102 is bonded and fixed in the middle part of the bottom surface of silicon rod 1 to be cut.
During actual use, multi-line cutting machine described in step 101 is existing conventional multi-line cutting machine.At present, there is a lot of family in the manufacturer of multi-line cutting machine, and famous foreign brand has Mei Yeboge (MEYERBURGER), the HCT of Switzerland; The high bird of Japan, An Yong and NTC; Home brands have Liancheng, Dalian, Hunan space crystalline substance etc., and the multi-line cutting machine of above-mentioned brand all can be used as multi-line cutting machine described in step 101 and uses.
In the present embodiment, described multi-line cutting machine is the multi-line cutting machine of the DS265 type that Switzerland Mei Yeboge (MEYERBURGER) company produces.During actual use, also can adopt the multi-line cutting machine of other type.
In the present embodiment, in step 102, bonded adhesives used is the incisory conventional silicon rod bonded adhesives of silicon chip, as Henkel KGaA 3388 silicon rod bonded adhesives.
In the present embodiment, the width of conductive tape 3 described in step 102 is 3mm ~ 10mm and its thickness is less than 0.5mm.
Actual when being adhesively fixed, conductive tape 3 described in step 102 is positioned at immediately below silicon rod 1 to be cut.In the present embodiment, the shape of cross section of described silicon rod 1 to be cut is rectangle.
In the present embodiment, conductive tape 3 described in step 102 is two-sided conductive tape.
Further, described two-sided conductive tape is the conductive tape that 3M company (company's full name is MinnesotaMiningandManufacturing, Minnesota mines and manufacturing industry company) produces.
In the present embodiment, the underrun bonded adhesives of conductive tape 3 described in step 102 is fixed on glass plate 2 and its end face is adhesively fixed on the bottom surface of silicon rod 1 to be cut.
In the present embodiment, on glass plate 2 described in step 102 the quantity of bonding conductive tape 3 be one.
Actual when using, on glass plate 2 described in step 102, the quantity of the bonding conductive tape 3 of institute also can be many, and many described conductive tapes 3 are parallel laying.Described in step 103, the quantity of silicon rod 1 to be cut is multiple, and the quantity of many described conductive tapes 3 is identical with the quantity of multiple described silicon rod 1 to be cut, and many described conductive tapes 3 are bonded and fixed in the middle part of the bottom surface of multiple described silicon rod 1 to be cut respectively.When carrying out energising wiring in step 2, many described conductive tapes 3 are all connected with the negative pole of dc source 4.Carry out silicon rod tape TURP in step 3 when cutting, adopt described multi-line cutting machine synchronously to cut multiple described silicon rod 1 to be cut.As shown in Figure 5, on glass plate 2 described in step 102 the quantity of bonding conductive tape 3 be two, correspondingly, the quantity being bonded and fixed to the silicon rod to be cut 1 on glass plate 2 is two, actual when cutting, adopt described multi-line cutting machine to carry out multi-wire saw to two described silicon rods 1 to be cut simultaneously.
In the present embodiment, the conventional bar glue fixed when bonded adhesives described in step 102 is silicon rod multi-wire saw.Actual when being adhesively fixed, first uniform application one deck bar glue on glass plate 2, then conductive tape 3 is kept flat on smeared bar glue, then put silicon rod 1 to be cut and press weight, device silicon rod to be cut 1 is firmly bonding.
Step 2, dc source wiring: after silicon rod 1 to be cut described in step 103 fixedly completes, the negative pole of conductive tape 3 with dc source 4 is connected, and the actinobacillus wheel 5 of cable pulling-pushing device in described multi-line cutting machine or take-up pulley 8 are connected with the positive pole of dc source 4.Described cable pulling-pushing device is mechanism steel wire 6 being carried out to folding and unfolding.
In the present embodiment, the voltage of dc source 4 described in step 2 is 35V ~ 45V.
During actual use, can according to specific needs, the voltage of dc source 4 be adjusted accordingly.
Step 3, silicon rod tape TURP cut: connect dc source 4, adopt described multi-line cutting machine to treat cutting silicon rod 1 and cut; In cutting process, described silicon rod 1 to be cut and steel wire 6 are all in electriferous state.
Composition graphs 3 and Fig. 4, multi-line cutting machine described in step one comprises frame and is arranged on the cutting chamber 12 in described frame, described workbench is driven by lift drive mechanism and is elevated, described workbench and described lift drive mechanism are in transmission connection, and described lift drive mechanism is arranged in described cutting chamber 12.Two structures being positioned at guide wheel 7, two the described guide wheels 7 in same level are provided with all identical with size in described cutting chamber 12.Cable pulling-pushing device described in step 2 is arranged in described frame, described cable pulling-pushing device comprises actinobacillus wheel 5 and take-up pulley 8, described steel wire 6 to be wrapped on two described guide wheels 7 and to form horizontal resection gauze between two described guide wheel 7, is cutting area between two described guide wheels 7.Described workbench be between two described guide wheels 7 above upper table 9 and/or between two described guide wheels 7 below lower table.Cutting mortar is sprayed onto the online cutting mortar nozzle of described horizontal cut line built with cutting mortar or being provided with by described cutting chamber 12; When described cutting chamber 12 is equipped with cutting mortar, be also provided with in described cutting chamber 12 to fill the agitator that stirs of cutting mortar, and described horizontal resection gauze is soaked in the interior cutting mortar filled of described cutting chamber 12.Glass plate 2 described in step 101 is bonded and fixed to below upper table 9 or above described lower table.
In the present embodiment, described glass plate 2 is bonded and fixed to below upper table 9.
During actual use, can according to specific needs, the quantity of guide wheel 7 be adjusted accordingly.
Meanwhile, described workbench is provided with the bonding plate 13 for fixing silicon rod 1 to be cut, described glass plate 2 bonding is fixed on bonding plate 13, described bonding plate 13 is coated with one deck second bonded adhesives coating 10-2.
In actual use procedure, carry out silicon rod tape TURP in step 3 when cutting, the Trace speed of described steel wire 6 is 9m/s ~ 11m/s; The mixing speed of described agitator is 600rmp ~ 1500rmp.
In the present embodiment, the Trace speed of described steel wire 6 is 10m/s.
In the present embodiment, carry out silicon rod tape TURP in step 3 when cutting, the cutting mortar adopted is silicon carbide mortar, and the abrasive material in described silicon carbide mortar is carborundum.Further, the density of described silicon carbide mortar is 1.62g/cm
3~ 1.64g/cm
3.
During actual use, the cutting mortar of other type can be adopted, if abrasive material is the cutting mortar of aluminium oxide, zirconium etc.
The charged Multi-wire cutting device of a kind of silicon chip as shown in Figure 3, comprises dc source 4, the conductive tape 3 be connected with the negative pole of dc source 4 and treats the multi-line cutting machine that cutting silicon rod 1 carries out cutting.Described conductive tape 3 is bonded and fixed in the middle part of the bottom surface of silicon rod 1 to be cut, the workbench of described multi-line cutting machine is adhesively fixed with glass plate 2, described glass plate 2 is coated with one deck first bonded adhesives coating 10-1, described conductive tape 3 is bonded and fixed on the first bonded adhesives coating 10-1 that glass plate 2 is smeared, and in described multi-line cutting machine, the actinobacillus wheel 5 of cable pulling-pushing device or take-up pulley 8 are connected with the positive pole of dc source 4.
In the present embodiment, described conductive tape 3, actinobacillus wheel 5 and be all connected by cable 11 between take-up pulley 8 with dc source 4, the voltage of described dc source 4 is 35V ~ 45V.
In the present embodiment, described actinobacillus wheel 5 and take-up pulley 8 are conducting metal wheel.
In the present embodiment, what described actinobacillus wheel 5 and being all equipped with between take-up pulley 8 and guide wheel 7 was made up of multiple directive wheel led to steel wire 6 crosses wheels, and actinobacillus wheel 5 and the steel wire between take-up pulley 8 and guide wheel 76 is all provided with tension detect and guiding mechanism 14.
In the present embodiment, the described multi-line cutting machine in the charged Multi-wire cutting device of described silicon chip is the multi-line cutting machine described in step one, see Fig. 3 and Fig. 4.
In the present embodiment, described multi-line cutting machine is the multi-line cutting machine of the DS265 type that Switzerland Mei Yeboge (MEYERBURGER) company produces.
In the present embodiment, the bonded adhesives that described first bonded adhesives coating 10-1 adopts is the incisory conventional silicon rod bonded adhesives of silicon chip, as Henkel KGaA 3388 silicon rod bonded adhesives.
During actual use, the change of the charged Multi-wire cutting device of silicon chip of the present invention to existing multi-line cutting machine is considerably less.For meeting, dc source 4 is connected on steel wire 6, the earthing detection alarm circuit of multi-line cutting machine is adjusted accordingly, wherein the principle of multi-line cutting machine earthing detection alarm is when broken string situation appears in steel wire 6, the end of a thread of steel wire 6 contacts ground detection device and sends warning, wherein the broken string of steel wire 6 is divided into three kinds of situations, i.e. inlet wire broken string, middle part broken string and outlet broken string, wherein inlet wire broken string and outlet broken string are also referred to as left side broken string and right side broken string, correspondingly, earthing detection alarm circuit comprises the earthing detection alarm circuit (also referred to as left side ground detection alarm circuit) of inlet wire broken string, the earthing detection alarm circuit (also referred to as main shaft earthing detection alarm circuit) of middle part broken string and the earthing detection alarm circuit (also referred to as right side ground detection alarm circuit) of outlet broken string.Herein, when the earthing detection alarm circuit of multi-line cutting machine is adjusted accordingly, only the wiring on the binding post of left and right sides earthing detection alarm circuit need be disconnected, and access the cable 11 of dc source 4.That is, eliminate the left and right sides earthing detection alarm on multi-line cutting machine, only leave main shaft earthing detection alarm, and the function of left and right sides earthing detection alarm relies on tension detect and guiding mechanism 14 (specifically the limit switch of straining pulley) to trigger.
The above; it is only preferred embodiment of the present invention; not the present invention is imposed any restrictions, every above embodiment is done according to the technology of the present invention essence any simple modification, change and equivalent structure change, all still belong in the protection domain of technical solution of the present invention.
Claims (9)
1. the charged multi-line cutting method of silicon chip, is characterized in that the method comprises the following steps:
Step one, silicon rod are bonding: be fixed on the workbench of multi-line cutting machine by silicon rod to be cut (1), fixation procedure is as follows:
Step 101, glass plate are fixed: be bonded and fixed on described workbench by glass plate (2);
Step 102, conductive tape are fixed: in a step 101 described glass plate (2) smears one deck bonded adhesives, and are bonded and fixed on glass plate (2) by conductive tape (3);
Step 103, silicon rod are fixed: be bonded and fixed on glass plate (2) by silicon rod to be cut (1), and make conductive tape described in step 102 (3) be bonded and fixed in the middle part of the bottom surface of silicon rod to be cut (1);
Step 2, dc source wiring: after silicon rod (1) to be cut described in step 103 fixedly completes, the negative pole of conductive tape (3) with dc source (4) is connected, and the actinobacillus wheel (5) of cable pulling-pushing device in described multi-line cutting machine or take-up pulley (8) are connected with the positive pole of dc source (4); Described cable pulling-pushing device is mechanism steel wire (6) being carried out to folding and unfolding;
Step 3, silicon rod tape TURP cut: connect dc source (4), adopt described multi-line cutting machine to treat cutting silicon rod (1) and cut; In cutting process, described silicon rod to be cut (1) and steel wire (6) are all in electriferous state;
On glass plate described in step 102 (2) the quantity of bonding conductive tape (3) be many, many described conductive tapes (3) are in parallel laying; The quantity of silicon rod to be cut described in step 103 (1) is multiple, the quantity of many described conductive tapes (3) is identical with the quantity of multiple described silicon rod to be cut (1), and many described conductive tapes (3) are bonded and fixed in the middle part of the bottom surface of multiple described silicon rod to be cut (1) respectively; When carrying out energising wiring in step 2, many described conductive tapes (3) are all connected with the negative pole of dc source (4); Carry out silicon rod tape TURP in step 3 when cutting, adopt described multi-line cutting machine synchronously to cut multiple described silicon rod to be cut (1).
2. according to the charged multi-line cutting method of a kind of silicon chip according to claim 1, it is characterized in that: the voltage of dc source described in step 2 (4) is 35V ~ 45V.
3. according to the charged multi-line cutting method of a kind of silicon chip described in claim 1 or 2, it is characterized in that: the width of conductive tape described in step 102 (3) is 3mm ~ 10mm and its thickness is less than 0.5mm.
4. according to the charged multi-line cutting method of the silicon chip described in claim 1 or 2, it is characterized in that: conductive tape described in step 102 (3) is two-sided conductive tape.
5. according to the charged multi-line cutting method of a kind of silicon chip described in claim 1 or 2, it is characterized in that: conductive tape described in step 102 (3) is positioned at immediately below silicon rod to be cut (1).
6. according to the charged multi-line cutting method of a kind of silicon chip described in claim 1 or 2, it is characterized in that: multi-line cutting machine described in step one comprises frame and is arranged on the cutting chamber (12) in described frame, described workbench is driven by lift drive mechanism and is elevated, described workbench and described lift drive mechanism are in transmission connection, and described lift drive mechanism is arranged in described cutting chamber (12); Be provided with two guide wheels (7) be positioned in same level in described cutting chamber (12), the structure of two described guide wheels (7) is all identical with size; Cable pulling-pushing device described in step 2 is arranged in described frame, described cable pulling-pushing device comprises actinobacillus wheel (5) and take-up pulley (8), described steel wire (6) is wrapped in two described guide wheels (7) and goes up and form horizontal resection gauze between two described guide wheels (7), is cutting area between two described guide wheels (7); Described workbench is for being positioned at the upper table (9) of top between two described guide wheels (7) and/or being positioned at the lower table of below between two described guide wheels (7); Cutting mortar is sprayed onto the online cutting mortar nozzle of described horizontal cut line built with cutting mortar or being provided with by described cutting chamber (12); When described cutting chamber (12) is equipped with cutting mortar, also be provided with in described cutting chamber (12) to fill the agitator that stirs of cutting mortar, and described horizontal resection gauze is soaked in the cutting mortar filled in described cutting chamber (12); Glass plate described in step 101 (2) is bonded and fixed to above upper table (9) below or described lower table.
7. according to the charged multi-line cutting method of a kind of silicon chip according to claim 6, it is characterized in that: carry out silicon rod tape TURP in step 3 when cutting, the Trace speed of described steel wire (6) is 9m/s ~ 11m/s; The mixing speed of described agitator is 600rmp ~ 1500rmp.
8. the charged Multi-wire cutting device of silicon chip, is characterized in that: comprise dc source (4), the conductive tape (3) be connected with the negative pole of dc source (4) and treat the multi-line cutting machine that cutting silicon rod (1) carries out cutting; Described conductive tape (3) is bonded and fixed in the middle part of the bottom surface of silicon rod to be cut (1), the workbench of described multi-line cutting machine is adhesively fixed with glass plate (2), described glass plate (2) is coated with one deck first bonded adhesives coating (10-1), described conductive tape (3) is bonded and fixed in the first bonded adhesives coating (10-1) that glass plate (2) is smeared, and in described multi-line cutting machine, the actinobacillus wheel (5) of cable pulling-pushing device or take-up pulley (8) are connected with the positive pole of dc source (4).
9. according to the charged Multi-wire cutting device of a kind of silicon chip according to claim 8, it is characterized in that: described conductive tape (3), actinobacillus wheel (5) and be all connected by cable (11) between take-up pulley (8) with dc source (4), the voltage of described dc source (4) is 35V ~ 45V.
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| CN201410432029.7A CN104175409B (en) | 2014-08-28 | 2014-08-28 | A kind of charged multi-line cutting method of silicon chip and charged Multi-wire cutting device |
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| CN109129949B (en) * | 2018-10-24 | 2024-02-23 | 乐山新天源太阳能科技有限公司 | Silicon wafer multi-wire cutting machine |
| CN111266660A (en) * | 2020-03-20 | 2020-06-12 | 台州市双辉机械设备有限公司 | VCM magnetic steel cutting method and bonding tool |
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| CN101797713B (en) * | 2010-04-08 | 2011-11-16 | 南京航空航天大学 | Grinding/electrolyzing composite multiline-cutting processing method for silicon wafer |
| JP5578223B2 (en) * | 2012-03-01 | 2014-08-27 | キヤノンマーケティングジャパン株式会社 | Multi-wire electric discharge machining system, multi-wire electric discharge machining apparatus, power supply device, semiconductor substrate or solar cell substrate manufacturing method, electric discharge machining method |
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