CN104175409A - Method and device for electrified multi-wire cutting of silicon wafers - Google Patents
Method and device for electrified multi-wire cutting of silicon wafers Download PDFInfo
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- CN104175409A CN104175409A CN201410432029.7A CN201410432029A CN104175409A CN 104175409 A CN104175409 A CN 104175409A CN 201410432029 A CN201410432029 A CN 201410432029A CN 104175409 A CN104175409 A CN 104175409A
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Abstract
The invention discloses a method for electrified multi-wire cutting of silicon wafers. The method includes the steps: 1, bonding a silicon rod, namely fixing a glass plate, fixing an electroconductive adhesive tape and fixing the silicon rod; 2, wiring a direct-current power source, namely connecting the electroconductive adhesive tape with a cathode of the direct-current power source and connecting a pay-off wheel or a take-up wheel of a take-up and pay-off mechanism in a multi-wire cutting machine with an anode of the direct-current power source; 3, performing wire electrified cutting on the silicon rod, namely switching on the direct-current power source and adopting the multi-wire cutting machine to cut the silicon rod to be cut. The method is simple in step and convenient to realize, and multi-wire cutting efficiency of the silicon wafers is improved effectively through electrified cutting. In addition, the invention further discloses a device for electrified multi-wire cutting of the silicon wafers. The device comprises the direct-current power source, the electroconductive adhesive tape and the multi-wire cutting machine for cutting the silicon rod to be cut. The electroconductive adhesive tape is fixed in the middle of the undersurface of the silicon rod to be cut in a bonded manner. The device is simple in structure, reasonable in design, low in input cost, simple and convenient to use and operate and high in cutting efficiency and cutting quality.
Description
Technical field
The invention belongs to silicon chip line cutting technology field, especially relate to the charged multi-line cutting method of a kind of silicon chip and charged Multi-wire cutting device.
Background technology
Multi-wire saw is one of very effective method of cutting large diameter silicon monocrystal rod.The multi-line cutting machine (abbreviation scroll saw) of being a dark horse is in recent years with its high production efficiency and piece rate, replace gradually inner circle cutting machine at large-diameter silicon wafer manufacture field, institute's pellet has the features such as flexibility is little, angularity is little, the depth of parallelism is good, gross thickness tolerance (TTV) discreteness is little, cutting edge cutting loss is little, surface damage layer is shallow, wafer surface roughness is little; Its cutting material cover all kinds semi-conducting material, as silicon, germanium, lithium niobate, GaAs, indium phosphide, synthetic cut stone, carborundum etc., therefore the application of multi-wire saw technology is also more and more extensive.Nowadays, numerical control multi-line cutting machine has replaced traditional inner circle cutting gradually, becomes the major way of silicon chip cutting processing.
When reality is carried out multi-wire saw to silicon chip, utilize the steel wire of high-speed motion to drive abrasive material to carry out attrition process to reach the object of cutting silicon wafer, steel wire is fixed on sheave and forms gauze, silicon rod to be cut (being processing work) is fixed on workbench, and realizes workpiece feeding by worktable lifting.Wherein, the quantity of workbench is generally two, and two workbench are respectively upper table and the lower table that is positioned at described upper table below.In multi-wire saw, must use a kind of mixed grinding material (being mainly silicon carbide abrasive) with mobility, the cutting mortar that this mixed grinding material is common indication.The main component of this cutting mortar is suspension and abrasive material (also claiming sword material), and the abrasive material adopting is SiC, aluminium oxide, zirconium etc., and the main component in suspension is polyethylene glycol, surfactant etc.In actual cutting process, cutting mortar is taken to cutting area by reciprocating steel wire, and the cutting mortar being brought into determines cut quality and the cutting power of silicon chip; And steel wire with grain type and the granularity of contained abrasive material in cutting mortar, be the key of decision cutting material finished product sheet any surface finish degree and cutting power.
When silicon chip is carried out to multi-wire saw, need steel wire to bring the silicon crystal that cutting mortar (being mainly the cutting blade material of cutting in mortar) processes needs into and rub, thereby crystal silicon rod is cut into solar energy, the needed silicon chip of semiconductor.In order to ensure higher profit, the production capacity that improves machine is one of important measures.
At present, the time of multi-wire saw crystal silicon rod is longer, and for example the clipping time of 8 cun of silicon rods is substantially at 8～9 hours.In order to improve production capacity, the cutting efficiency of multi-line cutting machine will be improved, require the output within the unit interval more.At present, the major measure that improves multi-line cutting machine cutting efficiency comprises following several: the first, improve the movement velocity of multi-line cutting machine leading screw, wherein leading screw is the mechanism that drives worktable lifting; The second, increase the quantity of the multi-line cutting machine that adopts; Three, increase the consumption of the consumptive material that adopts (cutting mortar) in cutting process, to shorten clipping time.Wherein, adopt the movement velocity that improves multi-line cutting machine leading screw when improving the mode of production capacity, due to the raising along with leading screw speed, certainly will increase the impulsive force to steel wire on sheave, steel wire is swung in the fluting of sheave.And the sheave using in general line cutting is mainly to apply one deck epoxy resin on master metal Kun surface; carry out cutting at epoxy resin surface; and meet the requirements of separation; because of the characteristic of epoxy resin, in the time of cutting, can be subject to the pressure that leading screw declines, therefore steel wire can be exerted pressure downwards to wire casing; make being subjected to displacement of gauze; not only affect cut quality, and because need shutdown resets to gauze, make on the contrary cutting efficiency significantly reduce.In addition, while adopting the consumption that increases the consumptive material that adopts (cutting mortar) in the quantity of multi-line cutting machine and cutting process as the mode of raising production capacity, all will drop into substantial contribution, production cost significantly increases.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned deficiency of the prior art, and the charged multi-line cutting method of silicon chip silicon chip that a kind of method step is simple, realize conveniently and effectively improve by charged cutting Multi-wire wafer cutting efficiency is provided.
For solving the problems of the technologies described above, the technical solution used in the present invention is: the charged multi-line cutting method of a kind of silicon chip, is characterized in that the method comprises the following steps:
Step 1, silicon rod are bonding: silicon rod to be cut is fixed on the workbench of multi-line cutting machine, fixation procedure is as follows:
Step 101, glass plate are fixed: glass plate is adhesively fixed on described workbench;
Step 102, conductive tape are fixed: on glass plate described in step 101, smear one deck bonded adhesives, and conductive tape is adhesively fixed on glass plate;
Step 103, silicon rod are fixed: silicon rod to be cut is adhesively fixed on glass plate, and conductive tape described in step 102 is adhesively fixed in the middle part, bottom surface of silicon rod to be cut;
Step 2, dc source wiring: after silicon rod to be cut fixedly completes described in step 103, conductive tape is connected with the negative pole of dc source, and the actinobacillus wheel of retractable cable mechanism in described multi-line cutting machine or take-up pulley are connected with the positive pole of dc source; Described retractable cable mechanism is the mechanism that steel wire is carried out to folding and unfolding;
Step 3, silicon rod tape TURP cut: connect dc source, adopt described multi-line cutting machine to treat cutting silicon rod cutting; In cutting process, described silicon rod to be cut and steel wire are all in electriferous state.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: the voltage of dc source described in step 2 is 35V～45V.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: the width of conductive tape described in step 102 is that 3mm～10mm and its thickness are less than 0.5mm.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: conductive tape described in step 102 is two-sided conductive tape.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: conductive tape described in step 102 be positioned at silicon rod to be cut under.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: described in step 102 on glass plate the quantity of bonding conductive tape be many, many described conductive tapes are parallel laying; The quantity of silicon rod to be cut described in step 103 is multiple, and the quantity of many described conductive tapes is identical with the quantity of multiple described silicon rods to be cut, and many described conductive tapes are adhesively fixed respectively in the middle part, bottom surface of multiple described silicon rods to be cut; While switching on wiring in step 2, many described conductive tapes are all connected with the negative pole of dc source; In step 3, carry out silicon rod tape TURP while cutting, adopt described multi-line cutting machine synchronously to cut multiple described silicon rods to be cut.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, it is characterized in that: multi-line cutting machine described in step 1 comprises frame and is arranged on the cutting chamber in described frame, described workbench is driven and is carried out lifting by lift drive mechanism, described workbench and described lift drive mechanism are in transmission connection, and described lift drive mechanism is arranged in described cutting chamber; In described cutting chamber, be provided with two guide wheels that are positioned in same level, the structure of two described guide wheels and size are all identical; The mechanism of retractable cable described in step 2 is arranged in described frame, described retractable cable mechanism comprises actinobacillus wheel and take-up pulley, described steel wire is wrapped on two described guide wheels and between two described guide wheels and forms horizontal resection gauze, between two described guide wheels, is cutting area; Described workbench is upper table above between two described guide wheels and/or the lower table below between two described guide wheels; Cutting mortar is housed in described cutting chamber or is provided with cutting mortar is sprayed onto to the online cutting mortar nozzle of described horizontal cut line; In the time that described cutting chamber is equipped with cutting mortar, the agitator that fill cutting mortar is stirred is also installed in described cutting chamber, and described horizontal resection gauze is soaked in the cutting mortar filling in described cutting chamber; Glass plate described in step 101 is adhesively fixed in upper table below or described lower table top.
The charged multi-line cutting method of above-mentioned a kind of silicon chip, is characterized in that: in step 3, carry out silicon rod tape TURP while cutting, the Trace speed of described steel wire is 9m/s～11m/s; The mixing speed of described agitator is 600rmp～1500rmp.
Simultaneously, the invention also discloses a kind of simple in structure, reasonable in design, use the charged Multi-wire cutting device of silicon chip easy and simple to handle and that cutting efficiency is high, result of use is good, it is characterized in that: the conductive tape that comprise dc source, is connected with the negative pole of dc source and treat the multi-line cutting machine that cutting silicon rod cuts; Described conductive tape is adhesively fixed in the middle part, bottom surface of silicon rod to be cut, on the workbench of described multi-line cutting machine, be adhesively fixed with glass plate, on described glass plate, be coated with one deck the first bonded adhesives coating, described conductive tape is adhesively fixed in the first bonded adhesives coating of smearing on glass plate, and in described multi-line cutting machine, the actinobacillus wheel of retractable cable mechanism or take-up pulley are connected with the positive pole of dc source.
The charged Multi-wire cutting device of above-mentioned a kind of silicon chip, is characterized in that: between described conductive tape, actinobacillus wheel and take-up pulley and dc source, be all connected by cable, the voltage of described dc source is 35V～45V.
The present invention compared with prior art has the following advantages:
1, method step simple, operate simple and easy and realize convenient.
2, input cost is lower, only needs to adopt conductive tape, and on existing multi-line cutting machine, sets up a dc source again and can realize, and without adopting miscellaneous equipment, thereby equipment investment cost is lower again.In addition, operating process is simple and easy, make any adjustments without the cutting method to existing multi-line cutting machine, only need adjust the sizing process of silicon rod to be cut before multi-wire saw, and adjust considerably lessly, conductive tape need be adhesively fixed on silicon rod to be cut ground, and conductive tape is connected with dc source with take-up pulley or actinobacillus wheel, be easy to grasp, very low to operating personnel's professional standards requirement, input manpower and materials cost is very low.Thereby the present invention has only increased dc source, conductive tape and cable.
3, the dc source voltage adopting is 35V～45V, and voltage is lower, thereby processing safety is higher.
4, the charged cutting of silicon chip realizes conveniently, makes silicon rod to be cut in electriferous state by the conductive tape joining with dc source, makes incisory steel wire in electriferous state, easy-to-connect by the actinobacillus wheel or the take-up pulley that join with dc source.
5, good and the cutting efficiency of result of use significantly improves, because the principle of multi-wire saw is to utilize the steel wire of high-speed motion to drive abrasive material to carry out attrition process and reach the object of cutting silicon wafer, thereby the ability of steel wire band sand determines cutting efficiency, and while adopting the present invention to treat cutting silicon rod and carry out charged multi-wire saw, because steel wire in cutting process is in electriferous state, can increase substantially like this band sand ability of steel wire, that is to say on steel wire significantly increase with the amount of abrasive material, thereby can increase substantially the efficiency of multi-wire saw, and cutting efficiency improves 10%～15%, thereby the present invention is not increasing production cost and can ensure under the prerequisite of product cut quality, clipping time can effectively be shortened, and enhance productivity, thereby reach the object that improves output.On the other hand, when silicon chip cutting, owing to passing into direct current between steel wire and silicon rod to be cut, added direct current energy effectively improves the cutting power of cutting mortar, thereby significantly shortens clipping time.Thereby the present invention can effectively improve the multi-wire saw efficiency of silicon chip by charged cutting.
6, due to after adopted cutting mortar stirs, abrasive material (as carborundum) in cutting mortar self can be with a certain amount of negative electrical charge, like this in cutting process, as passed into direct current again between steel wire and silicon rod to be cut, under band electro ultrafiltration, the cutting power of cutting mortar can obviously improve.
7, cut quality is effectively improved, owing to passing into direct current between steel wire and silicon rod to be cut, added direct current energy effectively improves the cutting power of cutting mortar, so not only effectively improve cutting efficiency, and can significantly improve cut quality, useless sheet (the cut of cutting that forms silicon chip that cuts, piebald etc.) rate is lower than 1%, there is high finished product rate, and cutting forms gross thickness error (TTV) the < 15 μ m of silicon chip, center thickness error (TV) is < 10 μ m, and angularity (Warp) and flexibility (Bow) that cutting forms silicon chip all meet solar energy-level silicon wafer processing request.
8, in multi-wire saw process, the use amount of the consumptive material that adopts (specifically referring to cutting mortar) does not have not to be increased, and the minimizing of the effective length of the steel wire that uses, in the situation that steel wire Trace speed is constant, improve cutting efficiency, actual use length that just can corresponding minimizing steel wire.
9, actual mechanical process is easy, and the method for existing Multi-wire wafer cutting is not made to larger change, only need finely tune sizing operation (being the operation that is adhesively fixed of silicon rod to be cut), and sizing operation and line cutting action, operate all very simple.
10, the charged Multi-wire cutting device that adopts is simple in structure, reasonable in design, use easy and simple to handle and cutting efficiency is high, result of use good, only need on existing multi-line cutting machine, increase dc source and complete wiring, thereby very little to the adjustment of existing multi-line cutting machine, input equipment cost is very low.
11, practical value is high, practical and the prospect of promoting the use of is extensive, widely applicable, is applicable to the Multi-wire wafer cutting of monocrystalline silicon, polysilicon, and is particularly useful for the cutting of large scale silicon rod.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Brief description of the drawings
Fig. 1 is the method flow block diagram of the present invention while carrying out charged multi-wire saw.
Fig. 2 is the adhering state schematic diagram of the present invention's silicon rod while carrying out charged multi-wire saw.
The use state reference map that Fig. 3 is charged Multi-wire cutting device that the present invention adopts.
Fig. 4 adopts the structural representation of cutting chamber in charged Multi-wire cutting device for the present invention.
Cut state schematic diagram when Fig. 5 adopts charged Multi-wire cutting device to cut two silicon rods for the present invention simultaneously.
Description of reference numerals:
1-silicon rod to be cut; 2-glass plate; 3-conductive tape;
4-dc source; 5-actinobacillus wheel; 6-steel wire;
7-guide wheel; 8-take-up pulley; 9-upper table;
10-1-the first bonded adhesives coating; 10-2-the second bonded adhesives coating; 11-cable;
12-cutting chamber; 13-bonding plate;
14-tension force Detection and adjustment mechanism.
Detailed description of the invention
The charged multi-line cutting method of a kind of silicon chip as shown in Figure 1, comprises the following steps:
Step 1, silicon rod are bonding: as shown in Figure 2, silicon rod 1 to be cut is fixed on the workbench of multi-line cutting machine, fixation procedure is as follows:
Step 101, glass plate are fixed: glass plate 2 is adhesively fixed on described workbench.
Step 102, conductive tape are fixed: on glass plate 2 described in step 101, smear one deck bonded adhesives, and conductive tape 3 is adhesively fixed on glass plate 2.
Step 103, silicon rod are fixed: silicon rod 1 to be cut is adhesively fixed on glass plate 2, and conductive tape 3 described in step 102 is adhesively fixed in the middle part, bottom surface of silicon rod 1 to be cut.
When actual use, multi-line cutting machine described in step 101 is existing conventional multi-line cutting machine.At present, there are a lot of families in the manufacturer of multi-line cutting machine, and external famous brand name has Mei Yeboge (MEYER BURGER), the HCT of Switzerland; High bird, An Yong and the NTC of Japan; Home brands have Liancheng, Dalian, Hunan space crystalline substance etc., and the multi-line cutting machine of above-mentioned brand all can be used as multi-line cutting machine described in step 101 and uses.
In the present embodiment, described multi-line cutting machine is the multi-line cutting machine of the DS265 type of Switzerland Mei Yeboge (MEYER BURGER) company production.When actual use, also can adopt the multi-line cutting machine of other type.
In the present embodiment, in step 102, bonded adhesives used is the incisory conventional silicon rod bonded adhesives of silicon chip, as Henkel KGaA 3388 silicon rod bonded adhesives.
In the present embodiment, the width of conductive tape 3 described in step 102 is that 3mm～10mm and its thickness are less than 0.5mm.
When actual being adhesively fixed, conductive tape 3 described in step 102 be positioned at silicon rod 1 to be cut under.In the present embodiment, the shape of cross section of described silicon rod 1 to be cut is rectangle.
In the present embodiment, conductive tape 3 described in step 102 is two-sided conductive tape.
And described two-sided conductive tape is the conductive tape that 3M company (company's full name is Minnesota Mining and Manufacturing, Minnesota mines and manufacturing industry company) produces.
In the present embodiment, the underrun bonded adhesives of conductive tape 3 described in step 102 is fixed on glass plate 2 and its end face is adhesively fixed on the bottom surface of silicon rod 1 to be cut.
In the present embodiment, on glass plate 2 described in step 102 the quantity of bonding conductive tape 3 be one.
When actual use, on glass plate 2 described in step 102 the quantity of bonding conductive tape 3 also can be many, many described conductive tapes 3 are parallel laying.The quantity of silicon rod 1 to be cut described in step 103 is multiple, and the quantity of many described conductive tapes 3 is identical with the quantity of multiple described silicon rods 1 to be cut, and many described conductive tapes 3 are adhesively fixed respectively in the middle part, bottom surface of multiple described silicon rods 1 to be cut.While switching on wiring in step 2, many described conductive tapes 3 are all connected with the negative pole of dc source 4.In step 3, carry out silicon rod tape TURP while cutting, adopt described multi-line cutting machine synchronously to cut multiple described silicon rods 1 to be cut.As shown in Figure 5, on glass plate 2 described in step 102 the quantity of bonding conductive tape 3 be two, correspondingly, the quantity of the silicon rod to be cut 1 on glass plate 2 of being adhesively fixed is two, when actual cutting, adopt described multi-line cutting machine to carry out multi-wire saw to two described silicon rods 1 to be cut simultaneously.
In the present embodiment, the conventional bar glue of fixing use when bonded adhesives described in step 102 is silicon rod multi-wire saw.When actual being adhesively fixed, first on glass plate 2, evenly smearing one deck bar glue, then on smeared bar glue, keep flat conductive tape 3, then put silicon rod 1 to be cut and press weight, install silicon rod 1 to be cut bonding firmly.
Step 2, dc source wiring: after described in step 103, silicon rod 1 to be cut fixedly completes, conductive tape 3 is connected with the negative pole of dc source 4, and the actinobacillus wheel 5 of retractable cable mechanism in described multi-line cutting machine or take-up pulley 8 are connected with the positive pole of dc source 4.Described retractable cable mechanism is the mechanism that steel wire 6 is carried out to folding and unfolding.
In the present embodiment, the voltage of dc source 4 described in step 2 is 35V～45V.
When actual use, can according to specific needs, the voltage of dc source 4 be adjusted accordingly.
Step 3, silicon rod tape TURP cut: connect dc source 4, adopt described multi-line cutting machine to treat cutting silicon rod 1 and cut; In cutting process, described silicon rod 1 to be cut and steel wire 6 are all in electriferous state.
In conjunction with Fig. 3 and Fig. 4, multi-line cutting machine described in step 1 comprises frame and is arranged on the cutting chamber 12 in described frame, described workbench is driven and is carried out lifting by lift drive mechanism, described workbench and described lift drive mechanism are in transmission connection, and described lift drive mechanism is arranged in described cutting chamber 12.In described cutting chamber 12, be provided with two structure and sizes that are positioned at 7, two the described guide wheels 7 of guide wheel in same level all identical.The mechanism of retractable cable described in step 2 is arranged in described frame, described retractable cable mechanism comprises actinobacillus wheel 5 and take-up pulley 8, described steel wire 6 is wrapped on two described guide wheels 7 and between two described guide wheels 7 and forms horizontal resection gauze, between two described guide wheels 7, is cutting area.Described workbench is upper table 9 above between two described guide wheels 7 and/or the lower table below between two described guide wheels 7.Cutting mortar is housed in described cutting chamber 12 or is provided with cutting mortar is sprayed onto to the online cutting mortar nozzle of described horizontal cut line; In the time that described cutting chamber 12 is equipped with cutting mortar, the agitator that fill cutting mortar is stirred is also installed in described cutting chamber 12, and described horizontal resection gauze is soaked in interior the filled cutting mortar of described cutting chamber 12.Glass plate 2 described in step 101 is adhesively fixed in upper table 9 belows or described lower table top.
In the present embodiment, described glass plate 2 is adhesively fixed in upper table 9 belows.
When actual use, can according to specific needs, the quantity of guide wheel 7 be adjusted accordingly.
Meanwhile, be provided with the bonding plate 13 for fixing silicon rod 1 to be cut on described workbench, described glass plate 2 bondings are fixed on bonding plate 13, are coated with one deck the second bonded adhesives coating 10-2 on described bonding plate 13.
In actual use procedure, carry out silicon rod tape TURP while cutting in step 3, the Trace speed of described steel wire 6 is 9m/s～11m/s; The mixing speed of described agitator is 600rmp～1500rmp.
In the present embodiment, the Trace speed of described steel wire 6 is 10m/s.
In the present embodiment, carry out silicon rod tape TURP while cutting in step 3, the cutting mortar adopting is silicon carbide mortar, and the abrasive material in described silicon carbide mortar is carborundum.And the density of described silicon carbide mortar is 1.62g/cm
3～1.64g/cm
3.
When actual use, can adopt the cutting mortar of other type, if abrasive material is the cutting mortar of aluminium oxide, zirconium etc.
The charged Multi-wire cutting device of a kind of silicon chip as shown in Figure 3, the conductive tape 3 that comprise dc source 4, is connected with the negative pole of dc source 4 and treat the multi-line cutting machine that cutting silicon rod 1 cuts.Described conductive tape 3 is adhesively fixed in the middle part, bottom surface of silicon rod 1 to be cut, on the workbench of described multi-line cutting machine, be adhesively fixed with glass plate 2, on described glass plate 2, be coated with one deck the first bonded adhesives coating 10-1, described conductive tape 3 is adhesively fixed on the first bonded adhesives coating 10-1 smearing on glass plate 2, and in described multi-line cutting machine, the actinobacillus wheel 5 of retractable cable mechanism or take-up pulley 8 are connected with the positive pole of dc source 4.
In the present embodiment, between described conductive tape 3, actinobacillus wheel 5 and take-up pulley 8 and dc source 4, be all connected by cable 11, the voltage of described dc source 4 is 35V～45V.
In the present embodiment, described actinobacillus wheel 5 and take-up pulley 8 are conducting metal wheel.
In the present embodiment, the wheels of crossing that are made up of multiple directive wheels that steel wire 6 is led are all housed between described actinobacillus wheel 5 and take-up pulley 8 and guide wheel 7, and on steel wire 6 between actinobacillus wheel 5 and take-up pulley 8 and guide wheel 7, tension force Detection and adjustment mechanism 14 are all installed.
In the present embodiment, the described multi-line cutting machine in the charged Multi-wire cutting device of described silicon chip is the multi-line cutting machine described in step 1, referring to Fig. 3 and Fig. 4.
In the present embodiment, described multi-line cutting machine is the multi-line cutting machine of the DS265 type of Switzerland Mei Yeboge (MEYER BURGER) company production.
In the present embodiment, the bonded adhesives that described the first bonded adhesives coating 10-1 adopts is the incisory conventional silicon rod bonded adhesives of silicon chip, as Henkel KGaA 3388 silicon rod bonded adhesives.
When actual use, the charged Multi-wire cutting device of silicon chip of the present invention is considerably less to the change of existing multi-line cutting machine.For meeting, dc source 4 is connected on steel wire 6, earthing detection alarm circuit to multi-line cutting machine adjusts accordingly, wherein the principle of multi-line cutting machine earthing detection alarm is in the time that broken string situation appears in steel wire 6, the end of a thread contact ground detection device of steel wire 6 also sends warning, wherein the broken string of steel wire 6 is divided into three kinds of situations, it is inlet wire broken string, middle part broken string and outlet broken string, wherein inlet wire broken string and outlet broken string are also referred to as left side broken string and right side broken string, correspondingly, earthing detection alarm circuit comprises the earthing detection alarm circuit (also referred to as left side earthing detection alarm circuit) of inlet wire broken string, the earthing detection alarm circuit (also referred to as right side earthing detection alarm circuit) of the earthing detection alarm circuit (also referred to as main shaft earthing detection alarm circuit) of middle part broken string and outlet broken string.Herein, when the earthing detection alarm circuit of multi-line cutting machine is adjusted accordingly, only the wiring on the binding post of left and right sides earthing detection alarm circuit need be disconnected, and access the cable 11 of dc source 4.That is to say, cancel the left and right sides earthing detection alarm on multi-line cutting machine, only leave main shaft earthing detection alarm, and the function of left and right sides earthing detection alarm relies on tension force Detection and adjustment mechanism 14 (the specifically limit switches of straining pulley) to trigger.
The above; it is only preferred embodiment of the present invention; not the present invention is imposed any restrictions, every any simple modification of above embodiment being done according to the technology of the present invention essence, change and equivalent structure change, and all still belong in the protection domain of technical solution of the present invention.
Claims (10)
1. the charged multi-line cutting method of silicon chip, is characterized in that the method comprises the following steps:
Step 1, silicon rod are bonding: silicon rod to be cut (1) is fixed on the workbench of multi-line cutting machine, and fixation procedure is as follows:
Step 101, glass plate are fixed: glass plate (2) is adhesively fixed on described workbench;
Step 102, conductive tape are fixed: on glass plate described in step 101 (2), smear one deck bonded adhesives, and conductive tape (3) is adhesively fixed on glass plate (2);
Step 103, silicon rod are fixed: silicon rod to be cut (1) is adhesively fixed upper in glass plate (2), and conductive tape described in step 102 (3) is adhesively fixed in the middle part, bottom surface of silicon rod to be cut (1);
Step 2, dc source wiring: after silicon rod to be cut described in step 103 (1) fixedly completes, conductive tape (3) is connected with the negative pole of dc source (4), and the actinobacillus wheel (5) of retractable cable mechanism in described multi-line cutting machine or take-up pulley (8) are connected with the positive pole of dc source (4); The mechanism of described retractable cable mechanism for steel wire (6) is carried out to folding and unfolding;
Step 3, silicon rod tape TURP cut: connect dc source (4), adopt described multi-line cutting machine to treat cutting silicon rod (1) and cut; In cutting process, described silicon rod to be cut (1) and steel wire (6) are all in electriferous state.
2. according to the charged multi-line cutting method of a kind of silicon chip claimed in claim 1, it is characterized in that: the voltage of dc source described in step 2 (4) is 35V～45V.
3. according to the charged multi-line cutting method of a kind of silicon chip described in claim 1 or 2, it is characterized in that: the width of conductive tape described in step 102 (3) is that 3mm～10mm and its thickness are less than 0.5mm.
4. according to the charged multi-line cutting method of the silicon chip described in claim 1 or 2, it is characterized in that: conductive tape described in step 102 (3) is two-sided conductive tape.
5. according to the charged multi-line cutting method of a kind of silicon chip described in claim 1 or 2, it is characterized in that: conductive tape described in step 102 (3) be positioned at silicon rod to be cut (1) under.
6. according to the charged multi-line cutting method of a kind of silicon chip described in claim 1 or 2, it is characterized in that: on glass plate described in step 102 (2) the quantity of bonding conductive tape (3) be many, many described conductive tapes (3) are parallel laying; The quantity of silicon rod to be cut described in step 103 (1) is multiple, the quantity of many described conductive tapes (3) is identical with the quantity of multiple described silicon rods to be cut (1), and many described conductive tapes (3) are adhesively fixed respectively in the middle part, bottom surface of multiple described silicon rods to be cut (1); While switching on wiring in step 2, many described conductive tapes (3) are all connected with the negative pole of dc source (4); In step 3, carry out silicon rod tape TURP while cutting, adopt described multi-line cutting machine synchronously to cut multiple described silicon rods to be cut (1).
7. according to the charged multi-line cutting method of a kind of silicon chip described in claim 1 or 2, it is characterized in that: multi-line cutting machine described in step 1 comprises frame and is arranged on the cutting chamber (12) in described frame, described workbench is driven and is carried out lifting by lift drive mechanism, described workbench and described lift drive mechanism are in transmission connection, and described lift drive mechanism is arranged in described cutting chamber (12); In described cutting chamber (12), be provided with two guide wheels (7) that are positioned in same level, structure and the size of two described guide wheels (7) are all identical; The mechanism of retractable cable described in step 2 is arranged in described frame, described retractable cable mechanism comprises actinobacillus wheel (5) and take-up pulley (8), described steel wire (6) is wrapped in two described guide wheels (7) above and forms horizontal resection gauze between two described guide wheel (7), between two described guide wheels (7), is cutting area; Described workbench is the lower table below being positioned at the upper table (9) of top between two described guide wheels (7) and/or being positioned between two described guide wheels (7); Cutting mortar is housed in described cutting chamber (12) or is provided with cutting mortar is sprayed onto to the online cutting mortar nozzle of described horizontal cut line; In the time that described cutting chamber (12) is equipped with cutting mortar, the agitator that fill cutting mortar is stirred is also installed in described cutting chamber (12), and described horizontal resection gauze is soaked in the cutting mortar filling in described cutting chamber (12); Glass plate described in step 101 (2) is adhesively fixed in upper table (9) below or described lower table top.
8. according to the charged multi-line cutting method of a kind of silicon chip claimed in claim 7, it is characterized in that: in step 3, carry out silicon rod tape TURP while cutting, the Trace speed of described steel wire (6) is 9m/s～11m/s; The mixing speed of described agitator is 600rmp～1500rmp.
9. the charged Multi-wire cutting device of silicon chip, is characterized in that: the conductive tape (3) that comprise dc source (4), is connected with the negative pole of dc source (4) and treat the multi-line cutting machine that cutting silicon rod (1) cuts; Described conductive tape (3) is adhesively fixed in the middle part, bottom surface of silicon rod to be cut (1), on the workbench of described multi-line cutting machine, be adhesively fixed with glass plate (2), on described glass plate (2), be coated with one deck the first bonded adhesives coating (10-1), described conductive tape (3) is adhesively fixed in the first bonded adhesives coating (10-1) of smearing on glass plate (2), and in described multi-line cutting machine, the actinobacillus wheel of retractable cable mechanism (5) or take-up pulley (8) are connected with the positive pole of dc source (4).
10. according to the charged Multi-wire cutting device of a kind of silicon chip claimed in claim 9, it is characterized in that: between described conductive tape (3), actinobacillus wheel (5) and take-up pulley (8) and dc source (4), be all connected by cable (11), the voltage of described dc source (4) is 35V～45V.
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| CN201410432029.7A CN104175409B (en) | 2014-08-28 | 2014-08-28 | A kind of charged multi-line cutting method of silicon chip and charged Multi-wire cutting device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109129949A (en) * | 2018-10-24 | 2019-01-04 | 乐山新天源太阳能科技有限公司 | Multi-wire cutting machine for silicon wafer |
| CN111266660A (en) * | 2020-03-20 | 2020-06-12 | 台州市双辉机械设备有限公司 | VCM magnetic steel cutting method and bonding tool |
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| US20130228553A1 (en) * | 2012-03-01 | 2013-09-05 | Kabushiki Kaisha Makino Huraisu Seisakusyo | Multi-wire electrical discharge machining system, multi-wire electrical discharge machining apparatus, power supply device, multi-wire electrical discharge machining method, semiconductor substrate, solar cell substrate, substrate manufacturing system, and substrate manufacturing method |
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| CN101797713A (en) * | 2010-04-08 | 2010-08-11 | 南京航空航天大学 | Grinding/electrolyzing composite multiline-cutting processing method for silicon wafer |
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| CN109129949A (en) * | 2018-10-24 | 2019-01-04 | 乐山新天源太阳能科技有限公司 | Multi-wire cutting machine for silicon wafer |
| CN109129949B (en) * | 2018-10-24 | 2024-02-23 | 乐山新天源太阳能科技有限公司 | Silicon wafer multi-wire cutting machine |
| CN111266660A (en) * | 2020-03-20 | 2020-06-12 | 台州市双辉机械设备有限公司 | VCM magnetic steel cutting method and bonding tool |
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| CN104175409B (en) | 2016-04-06 |
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