CN104170100B - 发光二极管及其制造方法 - Google Patents
发光二极管及其制造方法 Download PDFInfo
- Publication number
- CN104170100B CN104170100B CN201380014329.7A CN201380014329A CN104170100B CN 104170100 B CN104170100 B CN 104170100B CN 201380014329 A CN201380014329 A CN 201380014329A CN 104170100 B CN104170100 B CN 104170100B
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- conductive
- type semiconductor
- electrode
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 90
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000003780 insertion Methods 0.000 claims description 7
- 230000037431 insertion Effects 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 29
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 5
- 238000005530 etching Methods 0.000 description 15
- 238000001259 photo etching Methods 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- MGCQZNBCJBRZDT-UHFFFAOYSA-N midodrine hydrochloride Chemical compound [H+].[Cl-].COC1=CC=C(OC)C(C(O)CNC(=O)CN)=C1 MGCQZNBCJBRZDT-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
本发明公开一种发光二极管及其制造方法。所述发光二极管包括：氮化镓基板，具有多个贯通孔；氮化镓系半导体层叠结构体，位于所述基板上，并包含第一导电型半导体层、活性层及第二导电型半导体层；及第一电极，通过氮化镓基板的多个贯通孔而电连接于所述第一导电型半导体层。据此，可提供晶体缺陷少且能够防止发光面积减少的发光二极管。
Description
技术领域
本发明涉及一种发光二极管及其制造方法，尤其涉及一种具有氮化镓基板的发光二极管及其制造方法。
背景技术
通常，发光二极管通过在蓝宝石基板上生长多个氮化镓系半导体层来加以制造。然而，由于蓝宝石基板和氮化镓层的热膨胀系数及晶格常数的差异大，因此所生长的氮化镓层内会出现穿线位错(threading dislocation)之类的很多晶体缺陷。这种晶体缺陷使得发光二极管的光电特性难以得到提高。
进而，由于蓝宝石基板具有电绝缘性，因此制造出电极位于基板上部的水平型结构的发光二极管。对于水平型发光二极管而言，由于为了形成电极而去除活性区域的一部分，从而导致面积损失大，并且因电极而导致的光损失大。此外，为了解决水平型结构的发光二极管的问题而正在使用着倒装芯片方式的发光二极管。倒装芯片方式的发光二极管通过基板发射光，从而可减少因电极而导致的光损失。然而，倒装芯片发光二极管为了形成电极而需要去除活性区域，因此发生面积损失。
发明内容
技术问题
本发明所要解决的技术问题在于，提供一种能够通过减少晶体缺陷来改善发光效率的发光二极管及其制造方法。
本发明所要解决的另一个技术问题在于，提供一种能够防止发光面积被减少的发光二极管及其制造方法。
本发明所要解决的另一个技术问题在于，提供一种能够将电流均匀地扩散到活性区域的发光二极管及其制造方法。
技术方案
根据本发明的一个方面的发光二极管包括：氮化镓基板，具有多个贯通孔；氮化镓系半导体层叠结构体，位于所述基板上，并包含第一导电型半导体层、第二导电型半导体层及位于所述第一导电型半导体层和所述第二导电型半导体层之间的活性层，并且所述第一导电型半导体层被布置为比所述第二导电型半导体层更靠近于所述基板；及第一电极，通过所述多个贯通孔而电连接于所述第一导电型半导体层。
此外，所述发光二极管还可包括：反射件，位于所述第一电极和所述氮化镓基板之间。
进而，所述发光二极管还可包括：第二电极，电连接到第二导电型半导体层。所述第二电极可位于第二导电型半导体层上而连接于所述第二导电型半导体层，但不限于此。例如，所述第二电极可通过贯通所述氮化镓基板、所述第一导电型半导体层及所述活性层的贯通孔来电连接于所述第二导电型半导体层。
根据本发明的一个方面的发光二极管制造方法包括如下步骤：在氮化镓基板上生长第一导电型半导体层、活性层及第二导电型半导体层；在所述氮化镓基板上形成使得所述第一导电型半导体层暴露的多个贯通孔；形成通过所述多个贯通孔电连接到所述第一导电型半导体层的第一电极。
此外，所述发光二极管制造方法还可包括如下步骤：在形成所述第一电极之前，形成覆盖所述氮化镓基板的下部面的反射件。进而，所述反射件可覆盖所述贯通孔的侧壁。
此外，所述发光二极管制造方法还包括如下步骤：形成贯通所述氮化镓基板、所述第一导电型半导体层及所述活性层的贯通孔；形成通过贯通所述活性层的贯通孔来电连接于所述第二导电型半导体层的第二电极。
有益效果
通过采用氮化镓基板来减少第一导电型半导体层、活性层及第二导电型半导体层的晶体缺陷，从而可改善发光效率。此外，由于所述第一电极通过氮化镓基板而连接到第一导电型半导体层，因此可防止因第一电极的形成而导致的发光面积的减少。进而，由于所述第一电极通过所述多个贯通孔电连接到所述第一导电型半导体层，因此可将电流均匀地扩散到活性区域。
附图说明
图1是用于说明根据本发明的一个实施例的发光二极管的剖面图。
图2是用于说明根据本发明的另一个实施例的发光二极管的剖面图。
图3至图8是用于说明根据本发明的一个实施例的发光二极管制造方法的剖面图。
具体实施方式
以下，将参照附图对本发明的实施例进行详细说明。以下描述的实施例作为示例而被提供以将本发明的构思充分传达给本领域技术人员。因此，本发明不限于以下所说明的实施例，并且可实现为其他的形态。并且，在附图中，为了方便起见，可能会夸大示出构成要素的宽度、长度、厚度等。贯穿整个说明书，相同的标号表示相同的构成要素。
图1是用于说明根据本发明的一个实施例的发光二极管的剖面图。
参照图1，所述发光二极管包括：氮化镓基板21、第一导电型半导体层23、活性层25及第二导电型半导体层27。进而，所述发光二极管还可包括：反射件35、第一电极37、透明电极39、第二电极41。
所述氮化镓基板21可具有约200～350μm的厚度。半导体层叠结构体30位于所述氮化镓基板21上。该半导体层叠结构体30由包含第一导电型半导体层23、活性层25及第二导电型半导体层27的多个半导体层构成。这里，第一导电型半导体层23及第二导电型半导体层27分别为n型及p型，n型半导体层23比p型半导体层27更靠近于基板21。
所述第一导电型半导体层23、活性层25及第二导电型半导体层27由氮化镓系化合物半导体层形成，所述活性层25可具有单量子阱结构或者多量子阱结构。
所述半导体层叠结构体30由在氮化镓基板21上生长的多个半导体层形成，因此位错密度可以是5E6/cm2以下。据此，可提供发光效率优异且适用于高电流驱动的发光二极管。
此外，所述氮化镓基板具有使得所述第一导电型半导体层23暴露的多个贯通孔21a。所述多个贯通孔21a可以以矩阵形状或者条纹形状排列。这些贯通孔21a可具有宽度从基板21上的上部侧面到下部面越来越宽的形状。
所述第一电极37通过所述多个贯通孔21a电连接到第一导电型半导体层23。所述第一电极37可包含用于连接第一导电型半导体层23的欧姆金属层。
此外，反射件35位于所述第一电极37和基板21之间。所述反射件35还可覆盖多个贯通孔21a的侧壁。位于所述多个贯通孔21a内部的反射件35与位于基板21下部面的反射件可通过相同的工艺来形成，但不限于此，并且也可以分别通过其他的工艺来形成。
所述反射件35反射生成于活性层27的光，从而防止因光被第一电极37所吸收而导致的损失。所述反射件35可以以Ag或者Al之类的反射金属层形成，或者可被形成为全向反射件或分布式布拉格反射件。分布式布拉格反射件35可通过交替地层叠具有不同的折射率的介电层来形成，例如可通过交替地层叠SiO2和TiO2来形成。此时，第一层优选为由SiO2形成以与基板21良好地接合，此外最后一层可以由SiO2形成以保护分布式布拉格反射件35。
在所述反射件35为导电性的情况下，所述反射件35可覆盖暴露于贯通孔21a的第一导电型半导体层23。与此不同，所述反射件35为分布式布拉格反射件之类的绝缘性的情况下，形成开口部以使所述第一导电型半导体层23暴露。
此外，所述透明电极39位于第二导电型半导体层27上。透明电极39可由ITO或ZnO之类的透明氧化物或者Ni/Au之类的金属层形成。所述透明电极39可欧姆接触于第二导电型半导体层27。所述第二电极41可位于透明电极39上以被电连接到所述第二导电型半导体层27。
在本实施例中，所述第一电极37通过多个贯通孔21a连接到第一导电型半导体层23。因此，无需为了形成所述第一电极37而去除活性层25，据此可防止发光面积的减少。
图2是用于说明根据本发明的另一个实施例的发光二极管的剖面图。
参照图2，根据本实施例的发光二极管大致类似于参照图1说明的发光二极管，但是区别在于，第二电极41a通过贯通基板21、第一导电型半导体层23及活性层25的贯通孔21b来电连接到第二导电型半导体层27。
即，所述第二电极41a与第一电极37a一起在下部面通过贯通孔21b而连接到第二导电型半导体层27。此时，绝缘性反射件35可位于所述第二电极41a和基板21之间。如图2所示，所述第一电极37a和第二电极41a可在所述反射件35上彼此分离。
与此不同，在反射件35为导电性的情况下，反射件35也被分离以使第二电极41a从第一电极37a绝缘，此外，连接于第二电极41a的反射件35从绝缘层(未示出)、第一导电型半导体层23及活性层25分离。
根据本实施例，如同第一电极37a，第二电极41a可形成于基板21下部，因此可防止因第二电极41a而导致的光吸收。此外，将第一电极37a和第二电极41a形成于基板21下部，由此可在没有接合线的情况下贴装发光二极管，从而可简化封装制造工序。
图3至图8是用于说明根据本发明的一个实施例的发光二极管制造方法的剖面图。
参照图3，在氮化镓基板21上生长包含第一导电型半导体层23、活性层25及第二导电型半导体层27的多个氮化镓系半导体层的层叠结构体30。
之后，可平坦化基板21的下部面。基板21的下部面可通过磨削、研磨及抛光工艺而得以平坦化。由于氮化镓基板21比蓝宝石基板属于软质，因此相对易于去除基板21的下部。因此，可通过利用平板和钻石研磨液的机械抛光来去除基板下部的一部分。大体上，平坦化之后的基板21的厚度可以是250～300μm范围内，基板21的被去除的部分的厚度可以是20～50μm范围内。此外，还可通过化学机械抛光(CMP)来磨光表面，但可省略该工序。
通常，在现有的发光二极管制造过程中，在使基板下部面平坦化之前，执行通过部分去除所述第二导电型半导体层27及活性层25来暴露第一导电型半导体层23的工序(例如，台面工序)。然而，在本实施例中，通过去除所述第二导电型半导体层27及活性层25来暴露第一导电型半导体层23的工序被省略。
参照图4，在基板21的下部面形成蚀刻掩模层31。蚀刻掩模层31可由硅氧化膜形成。此外，在所述蚀刻掩模层31上可形成有光刻胶图案33。所述光刻胶图案33具有使得蚀刻掩模层31暴露的多个开口部33a。
参照图5，通过将所述光刻胶图案33用作蚀刻掩模层来对所述蚀刻掩模层31进行蚀刻。蚀刻掩模层31可通过利用了诸如氢氟酸或BOE的湿法刻蚀技术被蚀刻。据此，形成蚀刻掩模图案31p。所述蚀刻掩模图案31p具有与所述光刻胶图案33对应的多个开口部31a。所述基板21的下部面通过所述多个开口部31a被暴露。
参照图6，通过将所述蚀刻掩模图案31p用作蚀刻掩模而对所述氮化镓基板21进行蚀刻，由此形成使得第一导电型半导体层23暴露的多个贯通孔21a。氮化镓基板21可通过干法蚀刻或者利用硫酸、磷酸、硝酸或它们的混合溶液的湿法刻蚀或者一同使用干法蚀刻技术和湿法刻蚀技术而被蚀刻。
所述多个贯通孔21a可具有宽度从基板21的下部侧面到上部面越来越窄的形状。此外，在对所述氮化镓基板21进行蚀刻期间，第一导电型半导体层23的一部分也可以一起被蚀刻。
参照图7，在形成所述多个贯通孔21a之后，光刻胶图案33及蚀刻掩模图案31p被去除。所述光刻胶图案33可利用有机溶剂去除，蚀刻掩模图案31p可利用BOE去除。所述光刻胶图案33可在形成所述多个贯通孔21a之前预先被去除。
参照图8，在所述蚀刻掩模图案31p被去除之后，在基板21的下部面形成反射件35。所述反射件35还可形成于多个贯通孔21a内部以覆盖多个贯通孔21a的侧壁。在所述反射件35为绝缘性的情况下，如图所示，所述反射件35被形成为具有使得第一导电型半导体层23暴露的多个开口部。这些开口部可利用光刻和蚀刻工艺来形成。
如上所述，所述反射件35可以是反射金属层或全向反射件或分布式布拉格反射件。
在形成所述反射件35之后，形成第一电极37。所述第一电极37被电连接于第一导电型半导体层23。
此外，在所述半导体层叠结构体30上形成透明电极39，在透明电极39上形成第二电极41，从而可制造出如图1所示的发光二极管。所述透明电极39可由Ni/Au之类的透明金属层或者ITO或ZnO之类的透明氧化物形成。
在本实施例中，虽然图示并说明为第二电极41形成于半导体层叠结构体30上，但是如图2所示，第二电极41a也可形成于氮化镓基板21的下部。例如，除多个贯通孔21a之外，还可形成通过贯通氮化镓基板21、第一导电型半导体层23及活性层25来使第二导电型半导体层27暴露的多个贯通孔(图2的21b)。贯通孔21b可形成多个。之后，反射件35形成于氮化镓基板21下部，彼此电隔离的第一电极37a和第二电极41a可形成于反射件35上。这里，所述第一电极37a通过多个贯通孔21a来连接到第一导电型半导体层23，所述第二电极41a通过多个贯通孔21b来连接到第二导电型半导体层。
以上对本发明的多种实施例进行了说明，但是本发明并不限于这些实施例。本领域的技术人员应该理解，在不脱离本发明的技术构思的范围内，可进行各种变形。
Claims (6)
1.一种发光二极管，包括：
氮化镓基板，具有多个第一贯通孔及第二贯通孔；
氮化镓系半导体层叠结构体，位于所述氮化镓基板上，并包含第一导电型半导体层、第二导电型半导体层及位于所述第一导电型半导体层和所述第二导电型半导体层之间的活性层，并且所述第一导电型半导体层被布置为比所述第二导电型半导体层更靠近于所述氮化镓基板；及
第一电极，通过所述多个第一贯通孔而电连接于所述第一导电型半导体层；
第二电极，通过贯通所述氮化镓基板、第一导电型半导体层及活性层的所述第二贯通孔来电连接于所述第二导电型半导体层；以及
反射件，位于所述第一电极及第二电极与所述氮化镓基板之间，
其中，所述反射件延伸至所述多个第一贯通孔及第二贯通孔内部，以覆盖所述多个第一贯通孔及第二贯通孔的侧壁，
所述反射件具有绝缘性，
所述第一电极和所述第二电极在所述反射件上彼此分离。
2.根据权利要求1所述的发光二极管，其中，
所述反射件是分布式布拉格反射件。
3.根据权利要求1所述的发光二极管，其中，
所述第一导电型半导体层是n型半导体层。
4.一种发光二极管制造方法，包括如下步骤：
在氮化镓基板上生长第一导电型半导体层、活性层及第二导电型半导体层；
在所述氮化镓基板上形成使得所述第一导电型半导体层暴露的多个第一贯通孔；
形成贯通所述氮化镓基板、所述第一导电型半导体层及活性层的第二贯通孔；
形成覆盖所述多个第一贯通孔及所述第二贯通孔的侧壁和所述氮化镓基板的下部面的反射件；
形成通过所述多个第一贯通孔电连接到所述第一导电型半导体层的第一电极，
形成通过所述第二贯通孔而电连接于所述第二导电型半导体层的第二电极，
其中，所述反射件具有绝缘性，
所述第一电极和所述第二电极在所述反射件上彼此分离。
5.根据权利要求4所述的发光二极管制造方法，其中，
所述反射件是分布式布拉格反射件。
6.根据权利要求4所述的发光二极管制造方法，其中，
所述第一电极和第二电极通过同一个工艺同时形成。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0026240 | 2012-03-14 | ||
| KR20120026240A KR20130104612A (ko) | 2012-03-14 | 2012-03-14 | 발광 다이오드 및 그것을 제조하는 방법 |
| PCT/KR2013/001552 WO2013137571A1 (ko) | 2012-03-14 | 2013-02-27 | 발광 다이오드 및 그것을 제조하는 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104170100A CN104170100A (zh) | 2014-11-26 |
| CN104170100B true CN104170100B (zh) | 2017-03-08 |
Family
ID=49161424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380014329.7A Expired - Fee Related CN104170100B (zh) | 2012-03-14 | 2013-02-27 | 发光二极管及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9281446B2 (zh) |
| KR (1) | KR20130104612A (zh) |
| CN (1) | CN104170100B (zh) |
| WO (1) | WO2013137571A1 (zh) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134722A (zh) * | 2013-05-02 | 2014-11-05 | 展晶科技(深圳)有限公司 | 发光二极管制造方法 |
| CN104064640A (zh) * | 2014-07-04 | 2014-09-24 | 映瑞光电科技(上海)有限公司 | 垂直型led结构及其制作方法 |
| KR20160037060A (ko) * | 2014-09-26 | 2016-04-05 | 서울바이오시스 주식회사 | 발광소자 및 그 제조 방법 |
| US9705284B1 (en) * | 2014-12-04 | 2017-07-11 | Ii-Vi Optoelectronic Devices, Inc. | VCSEL with at least one through substrate via |
| KR102588170B1 (ko) | 2016-11-16 | 2023-10-13 | 삼성전자주식회사 | 다층 구조의 반사막을 구비한 반도체 발광 소자 |
| FR3061603B1 (fr) * | 2016-12-29 | 2021-01-29 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
| US10892297B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
| US12100696B2 (en) | 2017-11-27 | 2024-09-24 | Seoul Viosys Co., Ltd. | Light emitting diode for display and display apparatus having the same |
| US10892296B2 (en) * | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
| US11527519B2 (en) | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11282981B2 (en) | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
| US10748881B2 (en) | 2017-12-05 | 2020-08-18 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US10886327B2 (en) | 2017-12-14 | 2021-01-05 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| US11552057B2 (en) | 2017-12-20 | 2023-01-10 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11522006B2 (en) | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| US11552061B2 (en) | 2017-12-22 | 2023-01-10 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US11114499B2 (en) | 2018-01-02 | 2021-09-07 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
| US10784240B2 (en) | 2018-01-03 | 2020-09-22 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| CN108281540B (zh) * | 2018-01-26 | 2020-05-22 | 扬州乾照光电有限公司 | 一种热电分流垂直结构led芯片及其制作方法 |
| CN109616563A (zh) * | 2018-12-11 | 2019-04-12 | 南京大学 | 背电极通孔uvc半导体发光二极管及其制备方法 |
| KR20220100870A (ko) * | 2019-11-15 | 2022-07-18 | 서울바이오시스 주식회사 | 디스플레이용 발광 소자 및 그것을 가지는 디스플레이 장치 |
| US20240154063A1 (en) * | 2021-04-15 | 2024-05-09 | Enkris Semiconductor, Inc. | Semiconductor structures and manufacturing methods thereof |
| US20220416506A1 (en) * | 2021-06-23 | 2022-12-29 | Lumentum Operations Llc | Vertical cavity surface emitting laser device with at least one bonding layer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5157468A (en) * | 1990-09-21 | 1992-10-20 | Eastman Kodak Company | Light emitting diode resistant to change in operating temperature |
| CN1619845A (zh) * | 2003-11-18 | 2005-05-25 | Itswell株式会社 | 半导体发光二极管及其制造方法 |
| KR20110104693A (ko) * | 2010-03-17 | 2011-09-23 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06310547A (ja) * | 1993-02-25 | 1994-11-04 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US6657237B2 (en) * | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
| US7233028B2 (en) * | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
| US6611002B2 (en) * | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
| US7276742B2 (en) | 2001-11-19 | 2007-10-02 | Sanyo Electric Co., Ltd. | Compound semiconductor light emitting device and its manufacturing method |
| JP4766966B2 (ja) | 2005-09-07 | 2011-09-07 | 京セラ株式会社 | 発光素子 |
| US7566913B2 (en) * | 2005-12-02 | 2009-07-28 | Nitronex Corporation | Gallium nitride material devices including conductive regions and methods associated with the same |
| KR20080002199A (ko) | 2006-06-30 | 2008-01-04 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
| KR101364718B1 (ko) | 2007-02-15 | 2014-02-19 | 서울바이오시스 주식회사 | 발광 소자 및 그 제조 방법 |
| US20110198609A1 (en) * | 2010-02-12 | 2011-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-Emitting Devices with Through-Substrate Via Connections |
| KR101761385B1 (ko) * | 2010-07-12 | 2017-08-04 | 엘지이노텍 주식회사 | 발광 소자 |
| JP5633477B2 (ja) * | 2010-08-27 | 2014-12-03 | 豊田合成株式会社 | 発光素子 |
-
2012
- 2012-03-14 KR KR20120026240A patent/KR20130104612A/ko not_active Application Discontinuation
-
2013
- 2013-02-27 WO PCT/KR2013/001552 patent/WO2013137571A1/ko active Application Filing
- 2013-02-27 CN CN201380014329.7A patent/CN104170100B/zh not_active Expired - Fee Related
- 2013-02-27 US US14/385,113 patent/US9281446B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5157468A (en) * | 1990-09-21 | 1992-10-20 | Eastman Kodak Company | Light emitting diode resistant to change in operating temperature |
| CN1619845A (zh) * | 2003-11-18 | 2005-05-25 | Itswell株式会社 | 半导体发光二极管及其制造方法 |
| KR20110104693A (ko) * | 2010-03-17 | 2011-09-23 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130104612A (ko) | 2013-09-25 |
| US20150076446A1 (en) | 2015-03-19 |
| WO2013137571A1 (ko) | 2013-09-19 |
| CN104170100A (zh) | 2014-11-26 |
| US9281446B2 (en) | 2016-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104170100B (zh) | 发光二极管及其制造方法 | |
| US12107195B2 (en) | Light emitting diode package and method of manufacturing the same | |
| CN102117821B (zh) | 发光装置 | |
| CN106663722B (zh) | 发光元件 | |
| US9425359B2 (en) | Light emitting diode | |
| CN105449084B (zh) | 一种倒装高压led芯片电极及芯片制造方法 | |
| JP3724620B2 (ja) | 発光ダイオードの製造方法 | |
| US9064998B2 (en) | Light emitting diode and method for manufacturing the same | |
| TWI452727B (zh) | 發光二極體陣列及其製造方法 | |
| CN101969089B (zh) | 一种具有电流阻挡层氮化镓基发光二极管的制作方法 | |
| CN102683534A (zh) | 垂直式交流发光二极管器件及其制作方法 | |
| KR20110077707A (ko) | 수직형 발광 다이오드 및 그 제조방법 | |
| KR102530758B1 (ko) | 반도체 발광소자 패키지 | |
| CN103618042B (zh) | 一种半导体发光二极管芯片 | |
| TWI446578B (zh) | 發光元件及其製法 | |
| TWI623115B (zh) | 具粗化表面之薄膜式覆晶發光二極體及其製造方法 | |
| CN112310259A (zh) | 发光二极管元件及其制造方法 | |
| CN107068831A (zh) | 发光装置 | |
| KR20110085726A (ko) | 반도체 발광소자 및 이를 제조하는 방법 | |
| KR101910556B1 (ko) | 질화갈륨 기판을 갖는 발광 다이오드 | |
| CN205790049U (zh) | 垂直型发光二极管芯片 | |
| KR20110132161A (ko) | 반도체 발광 소자 및 그 제조방법 | |
| CN108110099A (zh) | 一种led芯片及其制作方法 | |
| EP3852154A1 (en) | Light-emitting element | |
| TW201244162A (en) | Light emitting diode and method for making it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170308 |