CN104170100A - 发光二极管及其制造方法 - Google Patents
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Abstract
本发明公开一种发光二极管及其制造方法。所述发光二极管包括：氮化镓基板，具有多个贯通孔；氮化镓系半导体层叠结构体，位于所述基板上，并包含第一导电型半导体层、活性层及第二导电型半导体层；及第一电极，通过氮化镓基板的多个贯通孔而电连接于所述第一导电型半导体层。据此，可提供晶体缺陷少且能够防止发光面积减少的发光二极管。
Description
技术领域
本发明涉及一种发光二极管及其制造方法，尤其涉及一种具有氮化镓基板的发光二极管及其制造方法。
背景技术
通常，发光二极管通过在蓝宝石基板上生长多个氮化镓系半导体层来加以制造。然而，由于蓝宝石基板和氮化镓层的热膨胀系数及晶格常数的差异大，因此所生长的氮化镓层内会出现穿线位错(threading dislocation)之类的很多晶体缺陷。这种晶体缺陷使得发光二极管的光电特性难以得到提高。
进而，由于蓝宝石基板具有电绝缘性，因此制造出电极位于基板上部的水平型结构的发光二极管。对于水平型发光二极管而言，由于为了形成电极而去除活性区域的一部分，从而导致面积损失大，并且因电极而导致的光损失大。此外，为了解决水平型结构的发光二极管的问题而正在使用着倒装芯片方式的发光二极管。倒装芯片方式的发光二极管通过基板发射光，从而可减少因电极而导致的光损失。然而，倒装芯片发光二极管为了形成电极而需要去除活性区域，因此发生面积损失。
发明内容
技术问题
本发明所要解决的技术问题在于，提供一种能够通过减少晶体缺陷来改善发光效率的发光二极管及其制造方法。
本发明所要解决的另一个技术问题在于，提供一种能够防止发光面积被减少的发光二极管及其制造方法。
本发明所要解决的另一个技术问题在于，提供一种能够将电流均匀地扩散到活性区域的发光二极管及其制造方法。
技术方案
根据本发明的一个方面的发光二极管包括：氮化镓基板，具有多个贯通孔；氮化镓系半导体层叠结构体，位于所述基板上，并包含第一导电型半导体层、第二导电型半导体层及位于所述第一导电型半导体层和所述第二导电型半导体层之间的活性层，并且所述第一导电型半导体层被布置为比所述第二导电型半导体层更靠近于所述基板；及第一电极，通过所述多个贯通孔而电连接于所述第一导电型半导体层。
此外，所述发光二极管还可包括：反射件，位于所述第一电极和所述氮化镓基板之间。
进而，所述发光二极管还可包括：第二电极，电连接到第二导电型半导体层。所述第二电极可位于第二导电型半导体层上而连接于所述第二导电型半导体层，但不限于此。例如，所述第二电极可通过贯通所述氮化镓基板、所述第一导电型半导体层及所述活性层的贯通孔来电连接于所述第二导电型半导体层。
根据本发明的一个方面的发光二极管制造方法包括如下步骤：在氮化镓基板上生长第一导电型半导体层、活性层及第二导电型半导体层；在所述氮化镓基板上形成使得所述第一导电型半导体层暴露的多个贯通孔；形成通过所述多个贯通孔电连接到所述第一导电型半导体层的第一电极。
此外，所述发光二极管制造方法还可包括如下步骤：在形成所述第一电极之前，形成覆盖所述氮化镓基板的下部面的反射件。进而，所述反射件可覆盖所述贯通孔的侧壁。
此外，所述发光二极管制造方法还包括如下步骤：形成贯通所述氮化镓基板、所述第一导电型半导体层及所述活性层的贯通孔；形成通过贯通所述活性层的贯通孔来电连接于所述第二导电型半导体层的第二电极。
有益效果
通过采用氮化镓基板来减少第一导电型半导体层、活性层及第二导电型半导体层的晶体缺陷，从而可改善发光效率。此外，由于所述第一电极通过氮化镓基板而连接到第一导电型半导体层，因此可防止因第一电极的形成而导致的发光面积的减少。进而，由于所述第一电极通过所述多个贯通孔电连接到所述第一导电型半导体层，因此可将电流均匀地扩散到活性区域。
附图说明
图1是用于说明根据本发明的一个实施例的发光二极管的剖面图。
图2是用于说明根据本发明的另一个实施例的发光二极管的剖面图。
图3至图8是用于说明根据本发明的一个实施例的发光二极管制造方法的剖面图。
具体实施方式
以下，将参照附图对本发明的实施例进行详细说明。以下描述的实施例作为示例而被提供以将本发明的构思充分传达给本领域技术人员。因此，本发明不限于以下所说明的实施例，并且可实现为其他的形态。并且，在附图中，为了方便起见，可能会夸大示出构成要素的宽度、长度、厚度等。贯穿整个说明书，相同的标号表示相同的构成要素。
图1是用于说明根据本发明的一个实施例的发光二极管的剖面图。
参照图1，所述发光二极管包括：氮化镓基板21、第一导电型半导体层23、活性层25及第二导电型半导体层27。进而，所述发光二极管还可包括：反射件35、第一电极37、透明电极39、第二电极41。
所述氮化镓基板21可具有约200～350μm的厚度。半导体层叠结构体30位于所述氮化镓基板21上。该半导体层叠结构体30由包含第一导电型半导体层23、活性层25及第二导电型半导体层27的多个半导体层构成。这里，第一导电型半导体层23及第二导电型半导体层27为p型，n型半导体层23比p型半导体层27更靠近于基板21。
所述第一导电型半导体层23、活性层25及第二导电型半导体层27由氮化镓系化合物半导体层形成，所述活性层25可具有单量子阱结构或者多量子阱结构。
所述半导体层叠结构体30由在氮化镓基板21上生长的多个半导体层形成，因此位错密度可以是5E6/cm2以下。据此，可提供发光效率优异且适用于高电流驱动的发光二极管。
此外，所述氮化镓基板具有使得所述第一导电型半导体层23暴露的多个贯通孔21a。所述多个贯通孔21a可以以矩阵形状或者条纹形状排列。这些贯通孔21a可具有宽度从基板21上的上部侧面到下部面越来越宽的形状。
所述第一电极37通过所述多个贯通孔21a电连接到第一导电型半导体层23。所述第一电极37可包含用于连接第一导电型半导体层23的欧姆金属层。
此外，反射件35位于所述第一电极37和基板21之间。所述反射件35还可覆盖多个贯通孔21a的侧壁。位于所述多个贯通孔21a内部的反射件35与位于基板21下部面的反射件可通过相同的工艺来形成，但不限于此，并且也可以分别通过其他的工艺来形成。
所述反射件35反射生成于活性层27的光，从而防止因光被第一电极37所吸收而导致的损失。所述反射件35可以以Ag或者Al之类的反射金属层形成，或者可被形成为全向反射件或分布式布拉格反射件。分布式布拉格反射件35可通过交替地层叠具有不同的折射率的介电层来形成，例如可通过交替地层叠SiO2和TiO2来形成。此时，第一层优选为由SiO2形成以与基板21良好地接合，此外最后一层可以由SiO2形成以保护分布式布拉格反射件35。
在所述反射件35为导电性的情况下，所述反射件35可覆盖暴露于贯通孔21a的第一导电型半导体层23。与此不同，所述反射件35为分布式布拉格反射件之类的绝缘性的情况下，形成开口部以使所述第一导电型半导体层23暴露。
此外，所述透明电极39位于第二导电型半导体层27上。透明电极39可由ITO或ZnO之类的透明氧化物或者Ni/Au之类的金属层形成。所述透明电极39可欧姆接触于第二导电型半导体层27。所述第二电极41可位于透明电极39上以被电连接到所述第二导电型半导体层27。
在本实施例中，所述第一电极37通过多个贯通孔21a连接到第一导电型半导体层23。因此，无需为了形成所述第一电极37而去除活性层25，据此可防止发光面积的减少。
图2是用于说明根据本发明的另一个实施例的发光二极管的剖面图。
参照图2，根据本实施例的发光二极管大致类似于参照图1说明的发光二极管，但是区别在于，第二电极41a通过贯通基板21、第一导电型半导体层23及活性层25的贯通孔21b来电连接到第二导电型半导体层27。
即，所述第二电极41a与第一电极37a一起在下部面通过贯通孔21b而连接到第二导电型半导体层27。此时，绝缘性反射件35可位于所述第二电极41a和基板21之间。如图2所示，所述第一电极37a和第二电极41a可在所述反射件35上彼此分离。
与此不同，在反射件35为导电性的情况下，反射件35也被分离以使第二电极41a从第一电极37a绝缘，此外，连接于第二电极41a的反射件35从绝缘层(未示出)、第一导电型半导体层23及活性层25分离。
根据本实施例，如同第一电极37a，第二电极41a可形成于基板21下部，因此可防止因第二电极41a而导致的光吸收。此外，将第一电极37a和第二电极41a形成于基板21下部，由此可在没有接合线的情况下贴装发光二极管，从而可简化封装制造工序。
图3至图8是用于说明根据本发明的一个实施例的发光二极管制造方法的剖面图。
参照图3，在氮化镓基板21上生长包含第一导电型半导体层23、活性层25及第二导电型半导体层27的多个氮化镓系半导体层的层叠结构体30。
之后，可平坦化基板21的下部面。基板21的下部面可通过磨削、研磨及抛光工艺而得以平坦化。由于氮化镓基板21比蓝宝石基板属于软质，因此相对易于去除基板21的下部。因此，可通过利用平板和钻石研磨液的机械抛光来去除基板下部的一部分。大体上，平坦化之后的基板21的厚度可以是250～300μm范围内，基板21的被去除的部分的厚度可以是20～50μm范围内。此外，还可通过化学机械抛光(CMP)来磨光表面，但可省略该工序。
通常，在现有的发光二极管制造过程中，在使基板下部面平坦化之前，执行通过部分去除所述第二导电型半导体层27及活性层25来暴露第一导电型半导体层23的工序(例如，台面工序)。然而，在本实施例中，通过去除所述第二导电型半导体层27及活性层25来暴露第一导电型半导体层23的工序被省略。
参照图4，在基板21的下部面形成蚀刻掩模层31。蚀刻掩模层31可由硅氧化膜形成。此外，在所述蚀刻掩模层31上可形成有光刻胶图案33。所述光刻胶图案33具有使得蚀刻掩模层31暴露的多个开口部33a。
参照图5，通过将所述光刻胶图案33用作蚀刻掩模层来对所述蚀刻掩模层31进行蚀刻。蚀刻掩模层31可通过利用了诸如氢氟酸或BOE的湿法刻蚀技术被蚀刻。据此，形成蚀刻掩模图案31p。所述蚀刻掩模图案31p具有与所述光刻胶图案33对应的多个开口部31a。所述基板21的下部面通过所述多个开口部31a被暴露。
参照图6，通过将所述蚀刻掩模图案31p用作蚀刻掩模而对所述氮化镓基板21进行蚀刻，由此形成使得第一导电型半导体层23暴露的多个贯通孔21a。氮化镓基板21可通过干法蚀刻或者利用硫酸、磷酸、硝酸或它们的混合溶液的湿法刻蚀或者一同使用干法蚀刻技术和湿法刻蚀技术而被蚀刻。
所述多个贯通孔21a可具有宽度从基板21a的下部侧面到上部面越来越窄的形状。此外，在对所述氮化镓基板21进行蚀刻期间，第一导电型半导体层23的一部分也可以一起被蚀刻。
参照图7，在形成所述多个贯通孔21a之后，光刻胶图案33及蚀刻掩模图案31p被去除。所述光刻胶图案33可利用有机溶剂去除，蚀刻掩模图案31p可利用BOE去除。所述光刻胶图案33可在形成所述多个贯通孔21a之前预先被去除。
参照图8，在所述蚀刻掩模图案31p被去除之后，在基板21的下部面形成反射件35。所述反射件35还可形成于多个贯通孔21a内部以覆盖多个贯通孔21a的侧壁。在所述反射件35为绝缘性的情况下，如图所示，所述反射件35被形成为具有使得第一导电型半导体层23暴露的多个开口部。这些开口部可利用光刻和蚀刻工艺来形成。
如上所述，所述反射件35可以是反射金属层或全向反射件或分布式布拉格反射件。
在形成所述反射件35之后，形成第一电极37。所述第一电极37被电连接于第一导电型半导体层23。
此外，在所述半导体层叠结构体30上形成透明电极39，在透明电极39上形成第二电极41，从而可制造出如图1所示的发光二极管。所述透明电极39可由Ni/Au之类的透明金属层或者ITO或ZnO之类的透明氧化物形成。
在本实施例中，虽然图示并说明为第二电极41形成于半导体层叠结构体30上，但是如图2所示，第二电极41a也可形成于氮化镓基板21的下部。例如，除多个贯通孔21a之外，还可形成通过贯通氮化镓基板21、第一导电型半导体层23及活性层25来使第二导电型半导体层27暴露的多个贯通孔(图2的21b)。贯通孔21b可形成多个。之后，反射件35形成于氮化镓基板21下部，彼此电隔离的第一电极37a和第二电极41a可形成于反射件35上。这里，所述第一电极37a通过多个贯通孔21a来连接到第一导电型半导体层23，所述第二电极41a通过多个贯通孔21b来连接到第二导电型半导体层。
以上对本发明的多种实施例进行了说明，但是本发明并不限于这些实施例。本领域的技术人员应该理解，在不脱离本发明的技术构思的范围内，可进行各种变形。
Claims (14)
1.一种发光二极管，包括：
氮化镓基板，具有多个贯通孔；
氮化镓系半导体层叠结构体，位于所述基板上，并包含第一导电型半导体层、第二导电型半导体层及位于所述第一导电型半导体层和所述第二导电型半导体层之间的活性层，并且所述第一导电型半导体层被布置为比所述第二导电型半导体层更靠近于所述基板；及
第一电极，通过所述多个贯通孔而电连接于所述第一导电型半导体层。
2.根据权利要求1所述的发光二极管，其中，还包括：位于所述第一电极和所述氮化镓基板之间的反射件。
3.根据权利要求2所述的发光二极管，其中，
所述反射件延伸至所述贯通孔内部。
4.根据权利要求3所述的发光二极管，其中，
所述反射件是金属反射件、全向反射件或分布式布拉格反射件。
5.根据权利要求1所述的发光二极管，其中，
所述第一导电型半导体层是n型半导体层。
6.根据权利要求2所述的发光二极管，其中，还包括：第二电极，所述第二电极通过贯通所述氮化镓基板、所述第一导电型半导体层及所述活性层的贯通孔来电连接于所述第二导电型半导体层。
7.根据权利要求6所述的发光二极管，其中，还包括：位于所述氮化镓基板和所述第二电极之间的反射件。
8.一种发光二极管制造方法，包括如下步骤：
在氮化镓基板上生长第一导电型半导体层、活性层及第二导电型半导体层；
在所述氮化镓基板上形成使得所述第一导电型半导体层暴露的多个贯通孔；
形成通过所述多个贯通孔电连接到所述第一导电型半导体层的第一电极。
9.根据权利要求8所述的发光二极管制造方法，其中，还包括如下步骤：
在形成所述第一电极之前，形成覆盖所述氮化镓基板的下部面的反射件。
10.根据权利要求9所述的发光二极管制造方法，其中，
所述反射件覆盖所述贯通孔的侧壁。
11.根据权利要求10所述的发光二极管制造方法，其中，
所述反射件是金属反射件、全向反射件或分布式布拉格反射件。
12.根据权利要求11所述的发光二极管制造方法，其中，还包括如下步骤：
形成贯通所述氮化镓基板、所述第一导电型半导体层及所述活性层的贯通孔；
形成通过贯通所述活性层的贯通孔来电连接于所述第二导电型半导体层的第二电极。
13.根据权利要求12所述的发光二极管制造方法，其中，还包括如下步骤：
在形成所述第二电极之前，形成覆盖所述氮化镓基板的下部面的反射件。
14.根据权利要求13所述的发光二极管制造方法，其中，
所述第一电极和第二电极通过同一个工艺同时形成。
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| CN106575687A (zh) * | 2014-09-26 | 2017-04-19 | 首尔伟傲世有限公司 | 发光二极管及其制造方法 |
| CN108281540A (zh) * | 2018-01-26 | 2018-07-13 | 扬州乾照光电有限公司 | 一种热电分流垂直结构led芯片及其制作方法 |
| CN109616563A (zh) * | 2018-12-11 | 2019-04-12 | 南京大学 | 背电极通孔uvc半导体发光二极管及其制备方法 |
| WO2022217539A1 (zh) * | 2021-04-15 | 2022-10-20 | 苏州晶湛半导体有限公司 | 半导体结构及其制作方法 |
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| US11282981B2 (en) | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
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| CN106575687A (zh) * | 2014-09-26 | 2017-04-19 | 首尔伟傲世有限公司 | 发光二极管及其制造方法 |
| CN106575687B (zh) * | 2014-09-26 | 2020-02-07 | 首尔伟傲世有限公司 | 发光二极管及其制造方法 |
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| CN109616563A (zh) * | 2018-12-11 | 2019-04-12 | 南京大学 | 背电极通孔uvc半导体发光二极管及其制备方法 |
| WO2022217539A1 (zh) * | 2021-04-15 | 2022-10-20 | 苏州晶湛半导体有限公司 | 半导体结构及其制作方法 |
Also Published As
| Publication number | Publication date |
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| KR20130104612A (ko) | 2013-09-25 |
| CN104170100B (zh) | 2017-03-08 |
| US20150076446A1 (en) | 2015-03-19 |
| WO2013137571A1 (ko) | 2013-09-19 |
| US9281446B2 (en) | 2016-03-08 |
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