CN104155590A - Comprehensive diode forward recovery parameter test and analysis platform - Google Patents
Comprehensive diode forward recovery parameter test and analysis platform Download PDFInfo
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- CN104155590A CN104155590A CN201410401893.0A CN201410401893A CN104155590A CN 104155590 A CN104155590 A CN 104155590A CN 201410401893 A CN201410401893 A CN 201410401893A CN 104155590 A CN104155590 A CN 104155590A
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Abstract
The invention discloses a comprehensive diode forward recovery parameter test and analysis platform which is characterized by comprising the following units: a pulse generator, a pulse current amplitude adjusting circuit, a pulse edge accelerating circuit, a pulse rise time processing circuit, a pulse rise time signal pulse width-voltage conversion circuit, a tested diode, a forward recovery voltage test and peak detection circuit, a forward recovery time processing circuit, a forward recovery time signal pulse width-voltage conversion circuit, an A/D conversion circuit, a central processor, and a display. A transistor with high feature frequency, low junction capacitance and small leakage current is chosen as a signal processing unit as much as possible, and the transistor is set and adjusted to a non-saturated work state, which can effectively avoid the charge storage effect, and is conducive to bandwidth maintaining and conduction velocity improving. The platform of the invention can be used for measuring and evaluating parameters of power diodes, switching diodes and IGBTs such as forward recovery waveform, forward recovery time and forward recovery voltage peak, and can contribute to the development of high-performance electrical systems.
Description
Technical field
The invention belongs to high-frequency wideband information signal processing technology field, specifically refer to diode forward recovery parametric synthesis detecting and analysing system.
Background technology
In power electronics, the signal equipments such as inverter, pulse transformer, radar, the switching transient characteristic of diode used has a direct impact reliability, efficiency.For the transient process of diode, reverse recovery characteristic has obtained many concerns.But diode also merits attention from the process of ending or counter deflexion is forward conduction.In the firm conducting of diode, forward voltage drop can first rise to a maximal value, then just can drop to steady-state value.This is because in forward recovery process, due to PN junction capacity effect, the majority carrier injecting from the two poles of the earth slowly increases, when initial, the forward resistance of diode is very large, along with current stabilization, the majority carrier that flows through diode is slowly increased to maximum, and the resistance of diode reduces, its both end voltage declines, and is referred to as conductivity modulation effect.That is to say, diode can bear a forward overshoot peak voltage in forward conduction moment, and this voltage is greater than steady state voltage, and this voltage max increases with the increase of di/dt.This forward peak voltage of fast recovery diode in diode is smaller, and slow recovery diode will be very serious.
Generally, how sub-the diode forward recovery characteristics being caused by effect be more a lot of soon than the reverse recovery characteristic of few sub-effect, therefore, higher to the requirement of measuring technology level, are generally difficult to reach.Development along with high frequency technique, for improving the technical merit of the equipment in the fields such as high power electronic equipment (inverter, pulse transformer etc.), Radar-Communication, be necessary to develop a kind of proving installation that is applicable to research and the parameter measurement of diode forward recovery characteristics.
Summary of the invention
The object of the invention is the shortcoming and defect existing in order to overcome prior art, and provide a kind of diode forward to recover parametric synthesis test platform.
For achieving the above object, technical scheme of the present invention is to include unit:
Pulse producer, for exporting pulse test electric current;
Pulse current amplitude regulating circuit, is connected in the output terminal of pulse producer and regulates for the amplitude of paired pulses measuring current, minutes 2 grades: low-grade 50mA-1A, high-grade 1-10A;
Porch accelerating circuit, is connected in the output terminal of pulse current amplitude regulating circuit, and by the time rate of change of pulse test electric current accelerate to 1000A/ μ s and more than;
Pulse rise time, treatment circuit, was connected in the output terminal of porch accelerating circuit, and for detection of corresponding pulse width signal pulse rise time, this, bandwidth for the treatment of circuit was not less than 700MHz pulse rise time;
Pulse rise time signal pulsewidth-voltage conversion circuit, be connected in the output terminal for the treatment of circuit pulse rise time, for by the pulse rise time detecting corresponding pulse width signal convert the output of corresponding magnitude of voltage to, this, pulsewidth-voltage conversion circuit of signal was not less than 700MHz pulse rise time;
Measured diode, forward bias is connected on the output terminal of porch accelerating circuit;
Forward recovery voltage test and peak-detector circuit, be connected on the output terminal of measured diode, for obtaining forward recovery voltage and the forward recovery voltage peak value of measured diode, the bandwidth of this forward recovery voltage test and peak-detector circuit is not less than 150MHz;
Forward recovery time, treatment circuit, was connected in the output terminal of forward recovery voltage test and peak-detector circuit, and for detection of corresponding pulse width signal forward recovery time of measured diode, this, bandwidth for the treatment of circuit was not less than 700MHz forward recovery time;
Forward recovery time signal pulsewidth-voltage conversion circuit, be connected in the output terminal for the treatment of circuit forward recovery time, for by the forward recovery time of the measured diode detecting corresponding pulse width signal convert the output of corresponding magnitude of voltage to, this, bandwidth of signal pulsewidth-voltage conversion circuit was not less than 700MHz forward recovery time;
A/D change-over circuit, its input end with forward recovery time signal pulsewidth-voltage conversion circuit and pulse rise time signal the input of pulsewidth-voltage conversion circuit be connected, and convert simulating signal to digital signal output;
Central processing unit, is connected in the output terminal of A/D change-over circuit, for calculating and obtain the numerical value of forward recovery time and pulse rise time;
Display, is connected on central processing unit, for forward recovery time and isoparametric numerical value demonstration pulse rise time.
Further arranging is to be also connected with oscillograph on the output terminal of described forward recovery voltage test and peak-detector circuit, for directly showing forward recovery voltage curve and measurement forward recovery time.
Further arrange is that the output terminal of described porch accelerating circuit is processed exported pulse current amplitude be transported to by A/D change-over circuit and in central processing unit, carries out computing and demonstration.
Further arrange is that the output terminal of described forward recovery voltage test and peak-detector circuit is processed the diode forward recovery voltage value being detected and forward recovery voltage peak value be transported to by A/D change-over circuit and in central processing unit, carries out computing and demonstration.
Further arrange is to be also connected with serial communication interface and USB interface on described central processing unit.
The invention has the beneficial effects as follows:
1, use platform of the present invention directly the forward recovery parameter of Power Diode Pumped, switching transistor, IGBT etc. to be carried out to Measurement and analysis comparison, find high performance device;
The forward recovery parameter of 2, testing by the present invention, connect with different process, different materials parameter, the different structure of device, find out corresponding relation, instruct design and the development of device, produce the device of high-quality, produce the equipments such as high performance power electronics, communication;
3, test platform of the present invention can be imparted knowledge to students for Power Electronic Technique, the cultivate professional talent.
4, result shows than faster by oscillograph readings signify by lcd screen, saves labour, reduces technical requirement.
Below in conjunction with specification drawings and specific embodiments, the present invention is described further.
Accompanying drawing explanation
Fig. 1 specific embodiment of the invention system principle diagram;
Fig. 2 specific embodiment of the invention signal processing flow figure;
Fig. 3 specific embodiment of the invention pulse current amplitude regulating circuit figure;
Fig. 4 specific embodiment of the invention porch accelerating circuit figure;
Fig. 5 specific embodiment of the invention forward recovery voltage test circuit figure;
Fig. 6 specific embodiment of the invention forward recovery voltage peak value (V
fm) detecting circuit;
Fig. 7 specific embodiment of the invention (t pulse rise time
r) treatment circuit figure and forward recovery time (t
fr) treatment circuit figure;
The pulsewidth of Fig. 8 specific embodiment of the invention signal pulse rise time---voltage conversion circuit figure;
Fig. 9 specific embodiment of the invention signal forward recovery time pulsewidth---the circuit diagram of voltage conversion circuit;
Figure 10 specific embodiment of the invention A/D change-over circuit, central processing unit, display connection layout;
The rising edge of a pulse waveform of Figure 11 specific embodiment of the invention (on) and forward recovery voltage waveform (under) oscillograph test pattern;
In Fig. 1, t
rthe indicating impulse rise time; t
frrepresent forward recovery time; I
findicating impulse current amplitude; V
frepresent forward recovery voltage value; V
fmrepresent forward recovery voltage peak value, CPU represents central processing unit.。
Embodiment
Below by embodiment, the present invention is specifically described; only be used to further illustrate the present invention; can not be interpreted as limiting the scope of the present invention, the technician in this field can make some nonessential improvement and adjustment to the present invention according to the content of foregoing invention.
Embodiment
pulse current amplitude regulating circuit
Pulse current amplitude regulating circuit as shown in Figure 3.Its input pulse (high level 5 μ s, low level 100 μ s) is produced by single-chip microcomputer 89C2051, after passage Port Multiplier 74HC4053 drives, sends to.Such pulse-generating circuit is used often, repeats no more.
As Fig. 3, in order to realize test index 50mA-10A, by electric current, divide 2 grades of adjustings: low-grade 50mA-1A, high-grade 1-10A.Regulator potentiometer can be realized Current Control, but there is inductance this potentiometer inside, affects rising time.And within the scope of pressure drop 17V, realize 10A current digital and regulate, the difficulty of control is large, and precision is not high.For this reason, select MOSFET, by controlling its grid-source voltage V
gS, control the drain current I by pipe
dalthough control I
d-V
gSbecome non-linear, but can pass through program trim voltage V
gS, come degree of precision to control electric current I
d.And V here
gScontrol, be by controlling grid, the resistor current of source electrode to be realized.Specifically see Fig. 3, TR1 and TR2, here as the device that regulates size of current, by controlling the electric current on R2, regulate the V of TR1 and TR2
gS, just can realize the drain current I that regulates TR1, TR2
d, reach and regulate the object that flows through diode forward restoring current IF.TR3, TR4 play respectively the on-off action of large small-range, and driving switch, at the base stage of TR3, the TR4 resistance of having connected, can play the linearity that improves switch conduction rising edge process here.
As Fig. 3, realize Current Control, also need the end of oppisite phase voltage (negative value) of control algorithm amplifier IC1D.Therefore, the output terminal of D/A chip IC 3 (model TLC5615CP) need to add anti-phase proportion operational amplifier and obtain negative value, is added to the end of oppisite phase of IC1D.TLC5615CP is controlled by 3 line SPI interfaces, data input pin DIN, clock signal clk, enable to control CS, data serial input, analog quantity OUT output.
porch accelerating circuit
The rising edge of such pulse or negative edge time is different from the shaping of ECL circuit or Schmidt trigger paired pulses herein, because can not regulate by expection.As Fig. 4, from the control signal of single-chip microcomputer and drive level change-over circuit, its be respectively ± 5V of high and low level, dutycycle 5%.By capacitive coupling, signal is connected to the grid of TR5, makes TR5 conducting rapidly, and TR6 turn-offs.The electric charge of C4, C5 and distributed capacitance charging, to the linear electric discharge of TR8, is exported the edge of measuring current pulse thereby controlled pipe TR9, TR10.For porch can be regulated continuously, the output of IC4 obtains negative voltage through anti-phase proportion operational amplifier IC1B.Through IC1A and IC1B, control the discharge current value of TR8, thereby porch can be regulated continuously.Here according to Q=IT=CU, because electric current I is adjustable, electric capacity is fixed (although having distributed capacitance), and U fixes, and so just can obtain adjustable rising time T=CU/I, meets requirement of the present invention.
According to the needs of range, Single-chip Controlling signal tr1, tr2, switch TR9 or TR10 conducting, and TR9, TR10 switching accesses respectively capacitor C 4, C5, and little shelves tr1, tr2 turn-off, middle-grade access tr1, and large shelves access tr2, thus there is large, medium and small third gear in forward position.
Between the input of the porch of this circuit and the data of IC4, be nonlinear relationship, need to be in programming by self-study pattern, find out accurate corresponding relation and storage, correction, specifically the reference software part of programming.
forward recovery voltage test circuit
As Fig. 5, IC9 obtains the signal of measured diode (DUT) forward recovery voltage from detecting resistance R c, and this signal waveform also can be delivered to CRO coupling CH2.IC9 is 140MHz broadband subtracter, and 4 resistance R 25-R28 of its input end form electric bridge sampling input end.The positive test pulse current that flows through diode forms voltage signal by resistance R c, the difference channel that this signal consists of electric bridge R25-R28, amplifier IC9, and according to " empty short " principle, the homophase of amplifier IC9, the voltage of inverting input equates, i.e. V
+/ 2=(V
-+ V
rC)/2.So V
rC=V
+-V
-, the voltage of Rc resistance is forward recovery voltage signal, and input IC9's is difference mode signal, can suppress common-mode signal.Here IC10, R30, R31 form amplifier, gain is 4, be because little shelves electric current 500mA detects resistance R c=4 Ω, obtain pulse height 2V signal, and large shelves electric current 10A, detect resistance 0.2 Ω, amplify 10 times, obtain pulse height 2V signal, adapt to like this level requirement of IC11 chip MC10H131 type rest-set flip-flop in Fig. 8, could be as the use of current impulse forward position, amplitude test.The IC9 amplifier is here selected very crucial, at this, selects AD811 amplifier to have the good characteristics such as high speed, high frequency, broadband, low noise, is operating amplifier with current feedback.The high speed of AD811 seems extremely important in this design, and gain G=+ 1 ,-3dB Time Bandwidth reach 140MHz, and gain G=+ 2 ,-3dB Time Bandwidth are 120MHz.And general voltage-type amplifier is limited by gain-bandwidth product, be difficult to reach bandwidth requirement.
forward recovery voltage peak-detector circuit
As Fig. 6, forward recovery waveform signal test V
fmpeak detection is extremely important, the maximal value of observable diode recovery waveform.By simple RC charging circuit, then the D6 germanium diode 1N60 that connects (pressure drop 0.3V left and right), be typical amplitude maximum value detecting circuit.But because D6 conducting needs pressure drop, actual amplitude maximal value need to add the pressure drop of diode D6.In order to compensate this pressure drop, at output terminal, increase again a silicon diode 1N4148, pressure drop can reach about 0.7V, can first regulate the potentiometer of W1, allows the output calibration of IC2B be zero.So just can reduce more exactly V
fmamplitude.
pulse rise time t
r
signal processing circuit
As Fig. 7 the first half, the pulse of fixed cycle represents 4 times or 10 times of test pulse electric current, 10% and 90% voltage comparators that DC voltage (1-8V) obtains 10% and 90% voltage dispensing TR13,14,15,16 compositions through R42-R44 dividing potential drop are made benchmark, and the pulse of sending comparer is the current signal after broad band amplifier IC10 amplification in Fig. 5.When current impulse forward position reach amplitude peak 10% time, TR13 exports the Q1 set that positive jump signal makes rest-set flip-flop IC11, when pulse front edge reaches maximum 90%, TR15 exports positive jump signal resets the Q1 of rest-set flip-flop IC11, so as to obtaining test pulse rise time t
r.
forward recovery time t
fr
signal processing circuit
Herein with aforesaid test pulse rise time t
rtreatment circuit is irrelevant, belongs to another circuit, certainly t
rless, t
framplitude can be larger.
As Fig. 7 the latter half, forward recovery waveform signal and forward voltage V
f(V
ffor forward voltage stationary value) 1.1 and 0.1 times compare respectively.Work as V
framplitude surpass 0.1V
ftime, TR21 exports positive jump signal and makes rest-set flip-flop Q2 set; Work as V
framplitude through maximal value, fall to being back to 1.1V
fduring value, TR17 exports positive jump signal resets trigger Q2.
pulse rise time signal pulsewidth---voltage conversion circuit
As Fig. 8, TR23 and TR24 in the Q1 of the IC11 in Fig. 7 end control chart 9, distribute to R63 by the electric current coming by W3 and R61 by rising edge ascending time/period ratio, send A/D conversion after IC14 amplifies also paraphase.Then become t
rdata send CPU to process and display shows.
forward recovery time signal pulsewidth---the circuit of voltage conversion circuit
As Fig. 9, the Q2 of the IC11 in Fig. 7 controls TR25 and TR26, and the electric current coming by W2 and R62 is distributed to R66 by rising edge ascending time/period ratio, send A/D conversion after IC15 amplifies also paraphase.Then become t
frdata send CPU to process and display shows.
The bandwidth of IC14, IC15 is limited, and it can bring the loss at the edge of processed ripple, but can in software, compensate by using formula bandwidth/edge conversion formula and forward position Superposition Formula, t
r=0.35/BW, t
rthe ns of unit, the MHz of BW unit.And the rising edge of each several part (or negative edge) time summed square again evolution can obtain actual rising time.If there is numerical value, show and that oscillograph records is different, so need to for bandwidth in circuit little carry out statistics, by oscillograph registration and the correction of liquid crystal indicating value once, dispose the value that bandwidth is little.
Available expression is described, t
r1oscillographic reading, t
r2the reading of liquid crystal, t
r3, t
r4rising edge (or negative edge) time of middle amplifier, oscilloprobe, require oscillographic precision as far as possible high.T
r1reading as standard value, t
r1 2=t
r2 2+ t
r3 2+ t
r4 2+ ...So, t
r2 2+ t
r3 2+ t
r4 2+ ... value just can calculate.After this this worthwhile one-tenth systematic error, conversion, in formula, is processed and is improved display precision with software.
conversion, LCD show and CPU management circuit
As shown in figure 10, flow through the forward current I of measured diode
f, forward recovery crest voltage V
fm, forward voltage V
f, rising time t
r, forward recovery time t
frtotally five parameters enter the A/D chip TLC2543CN of 12.Each equipment has three control input ends, CS, IOCK, DATA INPUT, be used for specially carrying out communication with master controller or peripheral hardware.A/D chip 14 road multiplex channel You11 road analog input ports and 3 internal reference level voltages.EOC port uprises level and means that A/D has transformed.
Liquid crystal display adopts the SSD1325 type OLED module of Revision 2.1 editions, wherein RES represent resetting pin, CS represent that sheet selects pin, D/C represents data and command port, RD represent read signal, R/W represents write signal, D0-7 represents eight bit data port.
CPU has selected general 51 single-chip microcomputers of W78E54B type, and this is because its port output current can be up to 60mA.The pins such as RXD (serial input mouth), TXD (serial delivery outlet) by CPU control single chip computer of keyboard input, INT0 (external interrupt 0), INT1 (external interrupt 1) carry out.CPU also has computing function.
The technical key point of the present embodiment:
(1) use and select higher cutoff frequency
f t, junction capacity is low, leakage current is little discrete component.Because
t r,
t frreached ns level, so in porch accelerating circuit, pulse rise time
t rtreatment circuit, forward recovery time
t frtreatment circuit,
t rsignal pulsewidth-voltage conversion circuit,
t frelectric current, the power amplifying part of the circuit such as signal pulsewidth-voltage conversion circuit are selected higher cutoff frequency as far as possible
f t, low junction capacity, discrete component that leakage current is little.Few with or without the reason of integrated circuit, be integrated amplifier distributed inductance, stray capacitance are difficult to meet the requirements.
(2) arrange and regulate transistor used to carry out work in unsaturated state, effectively avoiding the storage effect of electric charge, the time constant of its output terminal is smaller, is conducive to improve conducting speed.
(3) signal processing circuit is as far as possible symmetrical, and the accuracy that guarantee information is processed and the reliability of transmission suppress common-mode signal.As pulse rise time
t rtreatment circuit, forward recovery time
t frtreatment circuit,
t rsignal pulsewidth-voltage conversion circuit,
t frthe device of the circuit such as signal pulsewidth-voltage conversion circuit and parameter, duty symmetry.
Claims (5)
1. diode forward is recovered a parametric synthesis test platform, it is characterized in that including unit:
Pulse producer, for exporting pulse test electric current;
Pulse current amplitude regulating circuit, is connected in the output terminal of pulse producer and for the amplitude of measuring current pulse is regulated, divides 2 grades: low-grade 50mA-1A, high-grade 1-10A;
Porch accelerating circuit, is connected in the output terminal of pulse current amplitude regulating circuit, and more than the time rate of change of measuring current porch is accelerated to 1000A/ μ s;
Pulse rise time, treatment circuit, was connected in the output terminal of porch accelerating circuit, and for detection of corresponding pulse width signal pulse rise time, this, bandwidth for the treatment of circuit was not less than 700MHz pulse rise time;
Pulse rise time signal pulsewidth-voltage conversion circuit, be connected in the output terminal for the treatment of circuit pulse rise time, for by the pulse rise time detecting corresponding pulse width signal convert the output of corresponding magnitude of voltage to, this, pulsewidth-voltage conversion circuit of signal was not less than 700MHz pulse rise time;
Measured diode, forward bias is connected on the output terminal of porch accelerating circuit;
Forward recovery voltage is tested and peak-detector circuit, is connected in the two-stage of measured diode, and for obtaining forward recovery voltage and the forward recovery voltage peak value of measured diode, the bandwidth of this forward recovery voltage test and peak-detector circuit is not less than 150MHz;
Forward recovery time, treatment circuit, was connected in the output terminal of forward recovery voltage test and peak-detector circuit, and for detection of corresponding pulse width signal forward recovery time of measured diode, this, bandwidth for the treatment of circuit was not less than 700MHz forward recovery time;
Forward recovery time signal pulsewidth-voltage conversion circuit, be connected in the output terminal for the treatment of circuit forward recovery time, for by the forward recovery time of the measured diode detecting corresponding pulse width signal convert the output of corresponding magnitude of voltage to, this, bandwidth of signal pulsewidth-voltage conversion circuit was not less than 700MHz forward recovery time;
A/D change-over circuit, its input end with forward recovery time signal pulsewidth-voltage conversion circuit and pulse rise time signal the input of pulsewidth-voltage conversion circuit be connected, and convert simulating signal to digital signal output;
Central processing unit, is connected in the output terminal of A/D change-over circuit, for calculating and obtain the numerical value of forward recovery time and pulse rise time;
Display, is connected on central processing unit, for forward recovery time and isoparametric numerical value demonstration pulse rise time.
2. a kind of diode forward according to claim 1 is recovered parametric synthesis test platform, it is characterized in that: on described forward recovery voltage test and the output terminal of peak-detector circuit, be also connected with oscillograph, for directly showing forward recovery voltage curve and measuring forward recovery time.
3. a kind of diode forward according to claim 1 is recovered parametric synthesis test platform, it is characterized in that: the output terminal of described porch accelerating circuit is processed exported pulse current amplitude be transported to by A/D change-over circuit and in central processing unit, carries out computing and demonstration.
4. a kind of diode forward according to claim 1 is recovered parametric synthesis test platform, it is characterized in that: described forward recovery voltage test and the output terminal of peak-detector circuit are processed measured diode forward recovery voltage value and forward recovery voltage peak value be transported to by A/D change-over circuit and in central processing unit, carry out computing and demonstration.
5. a kind of diode forward according to claim 1 is recovered parametric synthesis test platform, it is characterized in that: on described central processing unit, be also connected with serial communication interface and USB interface.
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| CN106771582A (en) * | 2016-11-21 | 2017-05-31 | 东南大学 | The method of testing and tester of high-frequency pulse signal |
| CN110554296A (en) * | 2019-08-28 | 2019-12-10 | 全球能源互联网研究院有限公司 | IGBT (insulated Gate Bipolar transistor) forward recovery characteristic equivalent test circuit |
| CN110763971A (en) * | 2019-10-12 | 2020-02-07 | 温州大学 | Terahertz transit time device switch transient current waveform and parameter measuring device |
| CN111781485A (en) * | 2020-06-24 | 2020-10-16 | 珠海格力电器股份有限公司 | Diode detection method and device |
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| US10283958B2 (en) * | 2016-11-08 | 2019-05-07 | Teradyne, Inc. | Protection circuit |
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| CN110763971B (en) * | 2019-10-12 | 2020-09-29 | 温州大学 | Terahertz transit time device switch transient current waveform and parameter measuring device |
| CN111781485A (en) * | 2020-06-24 | 2020-10-16 | 珠海格力电器股份有限公司 | Diode detection method and device |
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