CN202661592U - Automatic pulse real-time field effect transistor threshold-voltage parameter measuring device - Google Patents
Automatic pulse real-time field effect transistor threshold-voltage parameter measuring device Download PDFInfo
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- CN202661592U CN202661592U CN2011205360471U CN201120536047U CN202661592U CN 202661592 U CN202661592 U CN 202661592U CN 2011205360471 U CN2011205360471 U CN 2011205360471U CN 201120536047 U CN201120536047 U CN 201120536047U CN 202661592 U CN202661592 U CN 202661592U
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Abstract
The utility model provides an automatic pulse real-time field effect transistor threshold-voltage parameter measuring device. A programmable multi-functional signal generation module is employed at a source signal generation end to replace a direct current voltage power supply in a previous measuring process, pulse voltage is provided by the programmable multi-functional signal generation module for a grid electrode and a drain electrode of a field effect transistor to be measured to make the pulse voltage of the grid electrode have a faster peak value change speed, while a high speed voltage data acquisition module and a variable resistor structure are employed at a measuring end to replace an ammeter in the previous measuring process to make measuring can be carried out under conditions of faster voltage change, so a measured result can be more accurate, moreover, a computer control module receives and stores data of the high speed voltage data acquisition module in the whole measuring process, and automatic drafting is accomplished, and a test speed is improved.
Description
Technical field
The utility model relates to a kind of performance of semiconductor device field tests, is specifically related to a kind of pulse real-time field effect transistor threshold voltage parameter auto-testing device and method thereof.
Background technology
Along with the extensive utilization of MOS device, observe and monitor the instable demand of MOSFET bias temperature and also once adding gradually.The threshold voltage that the bias temperature instability refers to MOSFET can present unsettled characteristic under certain biasing and temperature.As a rule, 10% threshold voltage variation will cause that logic and memory circuit can't normally start.Therefore, the variation of measurement threshold voltage has great importance.
Have at present two companies to have quite advanced technology in this field, they are respectively Keithley and Agilent.The core measuring method of the type product that they make all is the indirect method of measurement of a kind of on-the-fly of being called.Provide specific DC voltage with direct voltage source to grid and the drain electrode of MOSFET, then read drain current by the DC ammeter that is placed in drain electrode, extrapolate the size of threshold voltage by drain current at last and change.
Yet present measuring method greatest drawback is exactly:
1) can't dwindle again to duration of direct grid current voltage peak.Such as, Keithley 2600 can only be supported the minimum duration of 200 microseconds, Agilent B1500 also can only support 100 microseconds.And the price of these two instruments is all expensive, needs 45000 dollars such as Agilent B1500;
2) duration of DC voltage peak value (cycle) is fixed value.If the bias temperature stress time of MOSFET is 24 hours, short duration of peak value (such as 200 microseconds) will produce too many test point (such as 4.32 * 108 test points); And long duration of peak value (such as 1 second) can't test 1 second with size and the variation of interior threshold voltage.
Summary of the invention
The utility model purpose is to provide the real-time field effect transistor threshold voltage of a kind of pulse parameter auto-testing device, can cross in change pulse faster and carry out long-time bias temperature stress measurement work under the cycle, to improve scope and the precision of experiment measuring.
In order to solve these problems of the prior art, the technical scheme that the utility model provides is:
The real-time field effect transistor threshold voltage of a kind of pulse parameter auto-testing device, it comprises computer control module, program-controlled multifunctional pulse signal generating module and high speed voltage data acquisition module, and computer control module is connected with program-controlled multifunctional pulse signal generating module, high speed voltage data acquisition module respectively by the RS232 interface; Program-controlled multifunctional pulse signal generating module comprises grid impulse voltage generation module, drain electrode pulse voltage generation module and a numeral/analog conversion module, and numeral/analog conversion module can be controlled grid impulse voltage generation module and drain electrode pulse voltage generation module according to the instruction of computer control module; The signal input part of described high speed voltage data acquisition module connects the drain electrode of field effect transistor to be measured, and the output terminal of data acquisition module is connected to computer control module; Described computer control module sends the instruction of determining the pulse signal feature, receives also save data, demonstration data.
For technique scheme, we also have further prioritization scheme, as a supplement, further, described computer control module is provided with the button of relation, voltage peak and the pulsewidth of waveform, cycle and the test duration that can change the pulse signal that described program-controlled multifunctional signal generation module sends.
Further, the relation linear relationship of the cycle of the pulse signal of program-controlled multifunctional signal generation module transmission and test duration and logarithmic relationship are two kinds.
Further, described computer control module is provided with to preserve the button of high speed voltage data acquisition module signal, also is provided with automatically to show at computer screen the button of pulse voltage, drain current and threshold voltage characteristic curve.
Further, program-controlled multifunctional signal generation module sends different pulse signals under the axle at one time; Grid impulse voltage generation signaling module can pulse signals waveform, cycle, peak value and pulsewidth change, and drain electrode pulse voltage generation module can produce the cycle pulse signal identical with grid.
Further, the drain electrode of access field effect transistor to be measured after drain electrode pulse voltage generation module links to each other with a variable resistor, the receiving end of high speed voltage data acquisition module links to each other with the drain electrode of field effect transistor to be measured.
With respect to scheme of the prior art, the utility model has the advantages that:
1. the dc voltage power supply that adopts in the in the past measurement of program-controlled multifunctional signal generation module replacement occurs to hold at source signal in the present invention, pulse voltage is provided for grid and the drain electrode of field effect transistor to be measured by program-controlled multifunctional signal generation module, so that the pulse voltage of grid has faster peak change speed, and utilize high speed voltage data acquisition module and variable-resistance structure to replace the in the past reometer of measuring process at measuring junction, can carry out under the voltage changing faster so that measure, thereby make measurement result more accurate, whole measuring process receives and preserves the data of high speed voltage data acquisition module by computer control module in addition, automatically finish drafting, accelerated the speed of test;
2. measurement mechanism cost of manufacture provided by the present invention is low, far below existing equipment, can greatly save the measurement cost;
3. the present invention has the load button of setting pulse signal periodic function (linearity of bias temperature stress time or logarithmic function), peak value and three variable/functions of pulsewidth, has the button that sends the transmission button of data and stop transmitting to program-controlled multifunctional signal generation module, the button that has in addition the data that the button that receives high speed voltage data acquisition module data and preservation and drafting receive, complete function and various selection is provided, the interface is reasonable and humanized.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further described:
Fig. 1 is general structure block diagram of the present utility model;
Fig. 2 is circuit theory diagrams of the present utility model;
Fig. 3 is the circuit theory diagrams of existing threshold voltage parameter measurement instrument;
Fig. 4 is workflow diagram of the present utility model.
Embodiment
Below in conjunction with specific embodiment such scheme is described further.Should be understood that these embodiment are not limited to limit the scope of the invention for explanation the present invention.The implementation condition that adopts among the embodiment can be done further adjustment according to the condition of concrete producer, and not marked implementation condition is generally the condition in the normal experiment.
Embodiment:
The invention provides the real-time field effect transistor threshold voltage of a kind of pulse parameter auto-testing device, such as Fig. 1, it comprises computer control module, program-controlled multifunctional pulse signal generating module and high speed voltage data acquisition module, and computer control module is connected with program-controlled multifunctional pulse signal generating module, high speed voltage data acquisition module respectively by the RS232 interface; Program-controlled multifunctional pulse signal generating module comprises grid impulse voltage generation module, drain electrode pulse voltage generation module and a numeral/analog conversion module, and numeral/analog conversion module can be controlled grid impulse voltage generation module and drain electrode pulse voltage generation module according to the instruction of computer control module; The signal input part of high speed voltage data acquisition module connects the drain electrode of field effect transistor to be measured, and the output terminal of data acquisition module is connected to computer control module; Computer control module sends the instruction of determining the pulse signal feature, receives also save data, demonstration data.The button of relation, voltage peak and the pulsewidth of waveform, cycle and the test duration of the pulse signal that program-controlled multifunctional signal generation module sent under computer control module was provided with and can changes.Described computer control module is provided with to preserve the button of high speed voltage data acquisition module signal, also is provided with automatically to show at computer screen the button of pulse voltage, drain current and threshold voltage characteristic curve.
Program-controlled multifunctional signal generation module sends different pulse signals under the axle at one time in addition; Grid impulse voltage generation signaling module can pulse signals waveform, cycle, peak value and pulsewidth change, and drain electrode pulse voltage generation module can produce the cycle pulse signal identical with grid.The drain electrode of access field effect transistor to be measured after drain electrode pulse voltage generation module links to each other with a variable resistor, the receiving end of high speed voltage data acquisition module links to each other with the drain electrode of field effect transistor to be measured.
The circuit theory diagrams of shown in Figure 3 is present real-time threshold voltage parameter measuring apparatus, reometer is requisite original paper during present real-time threshold voltage is measured.When the grid of MOSFET gives input voltage, the electric current of current monitoring drain electrode, the curent change speed that reometer can detect can not be delicate less than 100.Be directly proportional because the pace of change of drain voltage is the pace of change with grid voltage, that is to say that the pace of change of grid voltage can not be too fast, according to the explanation of document, will cause like this that data are not very accurate in the short stress time.
The circuit diagram of the real-time threshold voltage measurement mechanism of pulse that the present invention that shown in Figure 2 is researches and develops.Seal in a resistance-changing resistor in drain electrode, and carried out the collection of voltage data in drain electrode.VDD is external pulse voltage signal (its cycle T is linearity or the logarithmic function of stress time t), and VDS is the voltage signal data of data acquisition module monitoring and preservation, and R is a resistance-changing resistor, and Id is drain current.By clicking the reception button of computer control module, data acquisition module can send the voltage signal data of VDS to computer control module, and computer control module is by formula＜1〉calculate and draw Id with the curve of stress time t variation.
I
d=(V
DD-V
DS)/R <1>
The process of deriving threshold voltage from above-mentioned drain current is as follows: add as shown in the figure voltage for the drain electrode of MOSFET, source ground, and provide the cycle of this pulse of pulse voltage VG(as shown in the figure identical with VDD to grid, voltage signal VG has peak value Vg+DV, intermediate value stress voltage Vg and valley Vg-DV).At the drain electrode monitoring current signal VDS of MOSFET, every like this set of pulses signal just can obtain the value [peak point current Id (Vg+DV), intermediate current Id (Vg) and valley point current Id (Vg-DV)] of three drain currents like this.After the n group, obtain the value of n group Id, can draw out the graph of relation of Id and stress time t, calculate again the curve map of threshold voltage vt and stress time t by formula.
Need following step from the drain current threshold voltage of deriving.A kind of grid voltage as shown in the figure, ± DV are a kind of voltage perturbations, can disturb gate stress voltage Vg.Behind the grid voltage and drain voltage that provide such as figure, MOSFET can produce n group mutual conductance gm (n):
g
m(n)=[I
d(V
g+DV)-I
d(V
g-DV)]/2DV<2>
The drain current data of then, getting correspondence position in per three groups of drain currents are got difference:
△I
d(n)=I
d(n)-I
d(n-1) <3>
According to＜2〉＜3, can obtain
△V
t(n)=-△I
d(n)/g
m(n) <3>
The specific works flow process as shown in Figure 4, steps flow chart comprises:
Step 1: computer control module is connected with high speed voltage data acquisition module with program-controlled multifunctional signal generation module by the RS232 interface, and the output terminal of program-controlled multifunctional signal generation module and the input end of high speed voltage data acquisition module are connected with MOSFET by figure one respectively;
Step 2: by the user interface in the computer control module, the initialization modules, and send one group of self-test signal to pulse signal generation module, in the situation that determine that Everything is fine, proceed experiment;
Step 3: test factually parameters value and the periodic function of required condition setting pulse signal, click and send button.Program-controlled multifunctional signal generation module receives the order from computer control module, and produces the grid that required pulse voltage signal is exported to MOSFET by it.Computer display VDD-t relation curve and VG-t relation curve;
Step 4: high speed voltage data acquisition module passes to computer controlled molding module, Computer display VDS-t relation curve in the drain electrode end monitoring of MOSFET and with the data that monitor;
Step 5: click the computed push-buttom of computer control module, computer control module can calculate by built-in formula the change curve (I of drain current
d-t relation curve), further release the change curve (Vt-t relation curve) of threshold voltage from the data of drain current.
Above-mentioned example only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the people who is familiar with technique can understand content of the present invention and according to this enforcement, can not limit protection scope of the present invention with this.All equivalent transformations that Spirit Essence is done according to the present invention or modification all should be encompassed within protection scope of the present invention.
Claims (6)
1. the real-time field effect transistor threshold voltage of pulse parameter auto-testing device, it is characterized in that, it comprises computer control module, program-controlled multifunctional pulse signal generating module and high speed voltage data acquisition module, and computer control module is connected with program-controlled multifunctional pulse signal generating module, high speed voltage data acquisition module respectively by the RS232 interface;
Program-controlled multifunctional pulse signal generating module comprises grid impulse voltage generation module, drain electrode pulse voltage generation module and a numeral/analog conversion module, and numeral/analog conversion module can be controlled grid impulse voltage generation module and drain electrode pulse voltage generation module according to the instruction of computer control module;
The signal input part of described high speed voltage data acquisition module connects the drain electrode of field effect transistor to be measured, and the output terminal of data acquisition module is connected to computer control module;
Described computer control module sends the instruction of determining the pulse signal feature, receives also save data, demonstration data.
2. the real-time field effect transistor threshold voltage of pulse according to claim 1 parameter auto-testing device, it is characterized in that, described computer control module is provided with the button of relation, voltage peak and the pulsewidth of waveform, cycle and the test duration that can change the pulse signal that described program-controlled multifunctional signal generation module sends.
3. the real-time field effect transistor threshold voltage of pulse according to claim 2 parameter auto-testing device is characterized in that, two kinds of the cycle of the pulse signal that program-controlled multifunctional signal generation module sends and the relation linear relationship of test duration and logarithmic relationships.
4. the real-time field effect transistor threshold voltage of pulse according to claim 1 parameter auto-testing device, it is characterized in that, described computer control module is provided with to preserve the button of high speed voltage data acquisition module signal, also is provided with automatically to show at computer screen the button of pulse voltage, drain current and threshold voltage characteristic curve.
5. according to claim 1 and 2 or the real-time field effect transistor threshold voltage of 3 described pulses parameter auto-testing device, it is characterized in that, program-controlled multifunctional signal generation module sends different pulse signals under the axle at one time; Grid impulse voltage generation signaling module can pulse signals waveform, cycle, peak value and pulsewidth change, and drain electrode pulse voltage generation module can produce the cycle pulse signal identical with grid.
6. the real-time field effect transistor threshold voltage of pulse according to claim 1 parameter auto-testing device, it is characterized in that, the drain electrode of access field effect transistor to be measured after drain electrode pulse voltage generation module links to each other with a variable resistor, the receiving end of high speed voltage data acquisition module links to each other with the drain electrode of field effect transistor to be measured.
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| CN2011205360471U CN202661592U (en) | 2011-12-20 | 2011-12-20 | Automatic pulse real-time field effect transistor threshold-voltage parameter measuring device |
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| CN2011205360471U CN202661592U (en) | 2011-12-20 | 2011-12-20 | Automatic pulse real-time field effect transistor threshold-voltage parameter measuring device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608508A (en) * | 2011-12-20 | 2012-07-25 | 西交利物浦大学 | Automatic real-time pulse measuring device and method for threshold voltage parameter of field-effect transistor |
| CN104090223B (en) * | 2014-07-16 | 2017-07-18 | 西安芯派电子科技有限公司 | The verification platform and method of testing of field-effect transistor SOA curves |
| CN109507560A (en) * | 2018-11-08 | 2019-03-22 | 上海华力集成电路制造有限公司 | The WAT test method of metal-oxide-semiconductor threshold voltage |
-
2011
- 2011-12-20 CN CN2011205360471U patent/CN202661592U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608508A (en) * | 2011-12-20 | 2012-07-25 | 西交利物浦大学 | Automatic real-time pulse measuring device and method for threshold voltage parameter of field-effect transistor |
| CN102608508B (en) * | 2011-12-20 | 2014-11-12 | 西交利物浦大学 | Automatic real-time pulse measuring device and method for threshold voltage parameter of field-effect transistor |
| CN104090223B (en) * | 2014-07-16 | 2017-07-18 | 西安芯派电子科技有限公司 | The verification platform and method of testing of field-effect transistor SOA curves |
| CN109507560A (en) * | 2018-11-08 | 2019-03-22 | 上海华力集成电路制造有限公司 | The WAT test method of metal-oxide-semiconductor threshold voltage |
| CN109507560B (en) * | 2018-11-08 | 2021-02-02 | 上海华力集成电路制造有限公司 | WAT test method for threshold voltage of MOS (Metal oxide semiconductor) tube |
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