CN102116827B - Device and method for automatically measuring pulse current-voltage (I-V) and pulse capacitance-voltage (C-V) semiconductor parameters - Google Patents
Device and method for automatically measuring pulse current-voltage (I-V) and pulse capacitance-voltage (C-V) semiconductor parameters Download PDFInfo
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Abstract
The invention discloses a device for automatically measuring pulse current-voltage (I-V) and pulse capacitance-voltage (C-V) semiconductor parameters. The device comprises a pulse signal generation module, a current conversion module, a data acquisition module and a computer control module. The invention also discloses a method for automatically measuring the pulse I-V and pulse C-V semiconductor parameters. The method comprises the following steps of: setting a parameter of each module on the computer control module and initializing; transmitting a test instruction to the pulse signal generation module by the computer control module to output a pulse signal to a device to be tested through the pulse signal generation module; the current conversion module is used for amplifying micro current of the device to be tested, converting the micro current into a voltage signal and outputting the voltage signal; the data acquisition module is used for converting the received signal into a digital signal and then transmitting the digital signal to the computer control module; the computer control module is used for storing and calculating data; and displaying a wavelike curve on a screen. The invention has the advantages that: the device is low in manufacturing cost and can conveniently and quickly perform measurement; an entire experimental process is automatically performed; the data is automatically processed and the characteristic curve is directly displayed; and the testing efficiency is improved.
Description
Technical field
The present invention relates to semiconductor material device performance field tests, relate to a kind of pulse I-V and pulse C-V semiconductor parameter measuring system and method.
Background technology
Nowadays our MOS (Metal-oxide-semicondutor) device of using is because the imperfection of structure can be gate medium (SiO at its oxide
2Or HfO
2Deng) introduce electric charge or energy state in the layer, thus the stability of device is impacted, and these electric charges and energy state are referred to as defective.Along with constantly reducing of dimensions of semiconductor devices, the leakage current of semiconductor devices (mainly being the MOS device) is more and more obvious on the impact of its performance, and the defective that the defective that produces in the device production process or external stress bring out can produce certain leakage current, will make component failure when leakage current acquires a certain degree.
In order to study defective to the impact of device parameters drift and performance degradation, generally measure the charge and discharge process of detecting defects by I-V (current-voltage) and C-V (capacitance-voltage), thus the defect concentration of gate dielectric material in the assessment device.Its measuring speed of common measuring method is generally a second level, but near the defective semiconductor devices gate medium-interface discharges and recharges the time and is far smaller than 1 second, because measuring speed is crossed the charge and discharge process that can detect slowly part gate medium-interface defective, thereby the defect concentration of substantially understate gate medium near interface.In order to overcome this problem, the researcher has invented pulse I-V and pulse C-V measuring technique, by changing common measuring voltage into pulse voltage, make test speed bring up to Microsecond grade, thereby can better survey the charge and discharge process of defective in the whole gate dielectric layer.
But pulse I-V and pulse C-V measure and generally adopt from taking circuit at present, carry out manual measurement by the devices such as pulse producer and oscillograph are coupled together.Because the instability from taking circuit causes experimental result unreliable.And surveying instrument all is the setting of manually carrying out parameter, causes testing efficiency lowly and may introduce the manual operation error, so that the measurement result out of true.Also relatively more difficult for the preservation of experimental data from taking circuit simultaneously.In addition, existing various detecting instruments are expensive, and the whole system that is used in pulse I-V and pulse C-V measurement is expensive.
And more existing pulse I-V and pulse C-V testing tool only have the part measurement function usually.Single pass surveying instrument needs a plurality of instrument combination to finish the one-shot measurement process usually.The surveying instrument that also has only has measurement function, needs to rely on external oscillograph to finish the Presentation Function of waveform.These have all caused measuring the increase of cost.The measuring system that also has is because it produces the restriction in pulse voltage cycle, thereby affected measurement range and the usable range of system.
Summary of the invention
The present invention seeks to: in order to overcome above problem, provide a kind of pulse I-V and pulse C-V semiconductor parameter self-operated measuring unit and method, low cost is measured fast and easy, and can the rapid saving measurement data.Whole experimentation carries out automatically, and data are automatically processed and directly realized the characteristic drafting of I-V, C-V at screen, improves testing efficiency.
Technical scheme of the present invention is: a kind of pulse I-V and pulse C-V semiconductor parameter self-operated measuring unit, comprise pulse signal generation module, current conversion module, data acquisition module, also comprise the computer control module that is connected with pulse signal generation module, current conversion module, data acquisition module respectively with gpib interface; Described pulse signal generation module produces the pulse signal that recurrence interval, voltage peak, edge rise time and number of pulses are set by computer control module; Described current conversion module comprises pulse I-V measuring current modular converter and pulse C-V measuring current modular converter, with the micro-current magnification of device under test generation, and is converted to voltage signal; Described data acquisition module comprises the analog/digital conversion device, the signal input part of data acquisition module connects respectively the signal output part of pulse signal generation module and current conversion module, its signal output part connects computer control module, and signal is sent back computer control module; Described computer control module comprises the memory storage of reception, save data and is used for showing I-V or the characteristic screen of C-V.
Further, be provided with the button of preserving from the data acquisition module block signal on the computer control module of described pulse I-V and pulse C-V semiconductor parameter self-operated measuring unit.
Further, be provided with on the computer control module of described pulse I-V and pulse C-V semiconductor parameter self-operated measuring unit automatically at computer screen drafting I-V or the characteristic button of C-V.
Further, be provided with the button of cycle, voltage peak, edge rise time and the number of pulses of the pulse signal that changes described pulse signal generation module transmission on the computer control module of described pulse I-V and pulse C-V semiconductor parameter self-operated measuring unit.
Further, in described pulse I-V and the pulse C-V semiconductor parameter self-operated measuring unit, described pulse I-V measuring current modular converter comprises a direct current voltage source and a variable resistor, is provided with the button that changes direct voltage source voltage on the described computer control module; Described pulse C-V measuring current modular converter comprises a current/voltage multiplying arrangement; Be provided with the button that changes the gain of current/voltage multiplying arrangement on the described computer control module.
The invention also discloses a kind of pulse I-V and pulse C-V semiconductor parameter method for automatic measurement, be applied on the semiconductor parameter self-operated measuring unit that comprises computer control module, pulse signal generation module, current conversion module, data acquisition module, comprise the steps:
Step 1: pulse signal generation module, current conversion module, data acquisition module are linked to each other with computer control module respectively by gpib interface;
Step 2: the parameter of pulse signal generation module, current conversion module and data acquisition module and each module of initialization are set in computer control module;
Step 3: computer control module sends test instruction to pulse signal generation module, and pulse signal generation module output pulse signal is to device under test;
Step 4: current conversion module is with the micro-current magnification of device under test and be converted to voltage signal, then exports to data acquisition module;
Step 5: the signal of data acquisition module return pulse signal generation module and current conversion module, and convert it into digital signal, then send computer control module to;
Step 6: computer control module is preserved the data that receive, and calculates, and shows semi-conductive I-V or C-V squiggle at screen.
Further, in described pulse I-V and the pulse C-V semiconductor parameter method for automatic measurement, step 2 comprises following substep:
Step 21: the GPIB address that each module is set in computer control module is the address of distributing in the control program;
Step 22: the cycle of the pulse signal of signalization generation module, voltage peak and edge rise time;
Step 23: carrying out pulse I-V when test and arrange the voltage parameter of direct voltage source of the pulse I-V measuring current modular converter of current conversion module, when carrying out pulse C-V test, the gain of the pulse C-V measuring current modular converter of current conversion module is set.
Advantage of the present invention is:
1. compare with the test circuit of being built by instruments such as pulse producer and oscillographs, measurement mechanism of the present invention replaces oscillograph to come the display waveform to save the measurement cost with computer screen;
2. the present invention is sent to computer control module by data acquisition module with measurement data, can pass through the real-time display measurement result of screen and signal waveform, makes things convenient for the user to observe;
3. be the step of building two cover test macros by pulse I-V and pulse C-V test set being incorporated in the device, can having simplified the people, save the test duration, improve testing efficiency;
4. the measurement parameter of all modules in the package unit can be set simultaneously by computer control module, save a large amount of manual operation times, improve testing efficiency and measuring accuracy;
5. can automatically process experimental data and saving result by computer control module, accelerate test speed.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples:
Fig. 1 is the structural representation of self-operated measuring unit of the present invention;
Fig. 2 is pulse signal generation module principle figure of the present invention;
Fig. 3 is the schematic diagram that pulse I-V of the present invention measures;
Fig. 4 is the schematic diagram that pulse C-V of the present invention measures;
Fig. 5 is the process flow diagram of method for automatic measurement of the present invention.
Wherein: 1 pulse signal generation module; 2 current conversion module; 3 data acquisition modules; 31 pulse I-V measuring current modular converters; 32 pulse C-V measuring current modular converters; 4 computer control module.
Embodiment
Embodiment: as shown in Figure 1, a kind of pulse I-V and pulse C-V semiconductor parameter self-operated measuring unit, comprise pulse signal generation module 2, current conversion module 3, data acquisition module 4, and the computer control module 1 that is connected with gpib interface with above device respectively.The output terminal of pulse signal generation module 2 connects device under test, and a utmost point of device under test connects current conversion module 3.
Described pulse signal generation module 2 is for generation of the variable pulse signal.Be provided with the button of the cycle, voltage peak, edge rise time and the number of pulses that change the pulse signal that pulse signal generation module 2 sends on the computer control module 1, parameter that can pulse signals arranges.The test instruction that pulse signal generation module 2 receives from computer control module, carry out autompulse transmission work, can send different cycles, peak value, rise/fall along the pulse signal of time and different numbers according to test instruction, finish different test experiments.
Fig. 2 is pulse signal generation module principle figure, and the master-oscillator circuit is made of free-running multivibrator, crystal oscillator or phase-locked oscilaltor, can produce the adjustable synchronizing pulse of frequency.Delay-level is comprised of monostable circuit and differentiating circuit, can produce the main pulse that certain retardation is arranged with synchronizing pulse.Pulse-shaping stage produces width accurate, waveform good rect.p. by adjusting pulsewidth and rise and fall along the time by the electric circuit constitutes such as monostalbe triggers.The basic function of this module comprises: can send the variable edge rise/fall time and be the pulse signal of 10 microseconds to 1 millisecond, precision 1 microsecond; Can produce the pulse signal that ceiling voltage is 5V; Recurrence interval in the variable minimum pulse cycle is 100 microseconds and can sends a plurality of continuous pulse signals.These module all functions all can be set by the control of computer control module 4.
The micro-current magnification that described current conversion module 3 produces device under test also is converted to voltage signal, comprises pulse I-V measuring current modular converter 31 and pulse C-V measuring current modular converter 32.1 pair of current conversion module 3 of computer control module is controlled, the mode of operation of control current conversion module 3, be specially: before the test beginning, experiment parameter is set and selects corresponding module access test circuit, when selecting the I-V test, 31 work of pulse I-V measuring current modular converter, pulse C-V measuring current modular converter is not worked; When selecting the C-V test, 32 work of pulse C-V measuring current modular converter, pulse I-V measuring current modular converter is not worked.
As shown in Figure 3, pulse I-V measuring current modular converter 31 comprises a direct current voltage source and a variable resistor.Be provided with the button that changes direct voltage source voltage on the computer control module.Add a pulse voltage at device under test, this device will produce the small electric current that is difficult for being detected, pulse I-V measuring current modular converter 31 is responsible for the Weak current amplification that device in the pulse I-V test process is produced and is converted into voltage signal, make things convenient for acquisition and display, can change the enlargement factor of electric current by regulating the variable resistor resistance.The function of direct voltage source is to make device under test conducting under the effect of grid voltage, and variable resistor is responsible for the electric current amplification and is converted into voltage signal.According to the experiment needs corresponding magnitude of voltage and resistance value are set, then the voltage source and the variable resistor place in circuit that set are measured, will be exaggerated and be converted into voltage signal, wherein V by this blocks current
DSBe direct voltage source, V
GFor being added in the pulse voltage signal on the device under test grid.The device under test drain electrode is at V
DSThe lower Weak current I that produces of effect
DBe converted into voltage signal V through variable resistor R
D, this signal is obtained and sends to computing machine and preserves with waveform and show by data acquisition module.According to the voltage data that computing machine is preserved, through type (1) converts current value to:
Pulse C-V measuring current modular converter 32 comprises one programmable current/voltage amplification device, can amplify and is converted into voltage nA level pulse current.Because the leakage current of pulse C-V test generation is very small, is about 10
-9～10
-6Ampere, can produce delay when coming amplified current with traditional resistance, calculate discovery according to time delay formula t=RC, because the impact of resistance, will be so that almost equate along the time with the pulse rise/fall signal delay time, thus can't judge that discharging and recharging the time in the C-V curve of acquisition is to be discharged and recharged or by causing signal delay time by the defective in the gate medium.For fear of signal delay test result is impacted, therefore use the current/voltage amplifying device with the small leakage current amplification of device generation in the pulse C-V test process and be converted into voltage signal, be provided with the button that changes the gain of current/voltage multiplying arrangement on the computer control module, the gain that the current/voltage multiplying arrangement can be set obtains required current amplification factor.
As shown in Figure 4, device under test is connected with pulse C-V modular converter by the coaxial cable with shielding action in the measuring process, and the Weak current that device under test produces amplifies and output by pulse C-V modular converter.The cardinal principle of pulse C-V modular converter is to utilize negative-feedback circuit that electric current is amplified.Although adopt negative-feedback technology to weaken the enlargement factor of signal, make the duty of system become more stable.
Current signal sends back computer control module by data acquisition module and preserves by after the amplification of current/voltage amplification module and being converted into voltage.According to the voltage data of preserving, can be obtained the capacitance of device by formula (2).
V wherein
OUTThe voltage data that obtains through current conversion module, V
OFFSETBe the offset voltage of current/voltage amplification module, A is the gain of current/voltage amplifier, and dV/dt is that pulse producer sends the rise/fall of pulse along slope.
Described data acquisition module 4 comprises the analog/digital conversion device, be specially the integrated circuit modules with high-speed a/d translation function, can collect minimum rise/fall is the pulse voltage signal of 10 microseconds along the time, be used for gathering the signal data of ranging pulse signal generating module 2 and current conversion module 3 generations, and data are sent back computer control module 1.
Computer control module 1 is equipped with control program, comprise instruction sending unit, memory storage and screen, whole system is carried out robotization control, send test instruction to pulse signal generation module 2, the data that receive data acquisition module 4 transmits, be specially by data acquisition module and obtain two voltage signals that experiment measuring arrives, respectively that pulse voltage and break-over of device electric current are through the voltage after changing, and be kept in the memory storage, the data that record are processed, I-V or the C-V squiggle of drawing is presented on the screen.Control program in the computer control module is converted into I-V or C-V family curve with formula with two voltage waveforms and is presented on the computer screen.
The measuring method of measuring system of the present invention comprises the steps:
Step 1: pulse signal generation module 2, current conversion module 3, data acquisition module 4 are linked to each other respectively with computer control module 1 by gpib interface; Modules in computer control module 1 control and management interface and the measurement mechanism.
Step 2: the parameter of pulse signal generation module 2, current conversion module 3, data acquisition module 4 and each module of initialization are set in computer control module 1.Be specially: open all modules, preheating, open the control program in the computing machine, the address that the GPIB address of the pulse I-V measuring current modular converter 31 of pulse signal generation module 2, current conversion module 3 and pulse C-V measuring current modular converter 32, data acquisition module 4 is set to distribute in the software in control program.This control program is a MFC who writes with C++ (the basic class libraries of Microsoft) visual interface, and each module in the system all is assigned fixing GPIB address for it in the control software of writing.Then cycle of the pulse signal of signalization generation module 2, voltage peak and edge rise time; The parameter of current conversion module 3 is set: the voltage parameter of the direct voltage source of pulse I-V measuring current modular converter 31 is set, the gain of pulse C-V measuring current modular converter 32 is set when carrying out pulse C-V test when carrying out pulse I-V test.Computing machine sends 8 local blockade of ASCII character (wherein most significant digit is arbitrarily) requirement by gpib interface to each module, after each module receives this instruction, becomes the Long-distance Control state from idle condition.After initialization finishes, each module will be arranged in the parameter of setting in the computer control module 1.
Step 3: computer control module 1 sends test instruction to pulse signal generation module 2, and pulse signal generation module 2 output pulse signals are to device under test; Along with the carrying out of test, the pulse signal that pulse signal generation module produces is controlled by computer control module, changes according to the setting of computer control module, thereby realizes automatically carrying out of test, does not need manually constantly to change parameter.
Step 4: current conversion module 3 is with the micro-current magnification of device under test and be converted to voltage signal, then exports to data acquisition module 4.
Step 5: owing to the signal in measuring is all simulated, so, the signal of data acquisition module 4 return pulse signal generation modules 2 and current conversion module 3, and convert it into digital signal, through sending back again computer control module 1 behind the coding.
Step 6: computer control module 1 is preserved the data that receive, and calculates, and shows semi-conductive I-V or C-V squiggle at screen.
The above only is the preferred embodiments of the present invention, can not limit scope of the invention process with this, and all simple conversion of doing according to claim of the present invention and description all should still belong to the protection domain that the present invention covers.
Claims (7)
1. a pulse I-V and pulse C-V semiconductor parameter self-operated measuring unit, comprise pulse signal generation module (2), current conversion module (3), data acquisition module (4), it is characterized in that: also comprise the computer control module (1) that is connected with pulse signal generation module (2), current conversion module (3), data acquisition module (4) respectively with gpib interface;
Described pulse signal generation module (2) produces the pulse signal that recurrence interval, voltage peak, edge rise time and number of pulses are set by computer control module (1);
Described current conversion module (3) comprises pulse I-V measuring current modular converter (31) and pulse C-V measuring current modular converter (32), with the micro-current magnification of device under test generation, and is converted to voltage signal;
Described data acquisition module (4) comprises the analog/digital conversion device, the signal input part of data acquisition module (4) connects respectively the signal output part of pulse signal generation module (2) and current conversion module (3), its signal output part connects computer control module (1), and signal is sent back computer control module (1);
Described computer control module (1) comprises the memory storage of reception, save data and is used for showing I-V or the characteristic screen of C-V.
2. pulse I-V and the pulse C-V semiconductor parameter self-operated measuring unit described in according to claim 1 is characterized in that: be provided with the button of preserving from data acquisition module (4) signal on the described computer control module (1).
3. pulse I-V and the pulse C-V semiconductor parameter self-operated measuring unit described in according to claim 1 is characterized in that: be provided with on the described computer control module (1) automatically and draw I-V or the characteristic button of C-V at computer screen.
4. pulse I-V and the pulse C-V semiconductor parameter self-operated measuring unit described in according to claim 1 is characterized in that: the button that is provided with the cycle, voltage peak, edge rise time and the number of pulses that change the pulse signal that described pulse signal generation module (2) sends on the described computer control module (1).
5. pulse I-V and the pulse C-V semiconductor parameter self-operated measuring unit described in according to claim 1, it is characterized in that: described pulse I-V measuring current modular converter (31) comprises a direct current voltage source and a variable resistor, is provided with the button that changes direct voltage source voltage on the described computer control module (1); Described pulse C-V measuring current modular converter (32) comprises a curtage multiplying arrangement; Be provided with the button that changes the gain of curtage multiplying arrangement on the described computer control module (1).
6. a pulse I-V and pulse C-V semiconductor parameter method for automatic measurement, be applied on the semiconductor parameter self-operated measuring unit that comprises computer control module (1), pulse signal generation module (2), current conversion module (3), data acquisition module (4), it is characterized in that comprising the steps:
Step 1: pulse signal generation module (2), current conversion module (3), data acquisition module (4) are linked to each other with computer control module (1) respectively by gpib interface;
Step 2: the parameter of pulse signal generation module (2), current conversion module (3) and data acquisition module (4) and each module of initialization are set in computer control module (1);
Step 3: computer control module (1) sends test instruction to pulse signal generation module (2), and pulse signal generation module (2) output pulse signal is to device under test;
Step 4: current conversion module (3) is with the micro-current magnification of device under test and be converted to voltage signal, then exports to data acquisition module (4);
Step 5: the signal of data acquisition module (4) return pulse signal generation module (2) and current conversion module (3), and convert it into digital signal, then send computer control module (1) to;
Step 6: computer control module (1) is preserved the data that receive, and calculates, and shows semi-conductive I-V or C-V squiggle at screen.
7. a kind of pulse I-V and the pulse C-V semiconductor parameter method for automatic measurement described in according to claim 6 is characterized in that step 2 comprises following substep:
Step 21: the GPIB address that each module is set in computer control module (1) is the address of distributing in the control program;
Step 22: the cycle of the pulse signal of signalization generation module (2), voltage peak and edge rise time;
Step 23: carrying out pulse I-V when test and arrange the voltage parameter of direct voltage source of the pulse I-V measuring current modular converter (31) of current conversion module (3), when carrying out pulse C-V test, the gain of the pulse C-V measuring current modular converter (32) of current conversion module (3) is set.
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| CN102520238A (en) * | 2011-12-23 | 2012-06-27 | 西交利物浦大学 | Intelligent programmable-control microcurrent measurement display system |
| CN103675646A (en) * | 2013-08-20 | 2014-03-26 | 西交利物浦大学 | A real time on-line test system for MOS chip gamma ray radiation responses |
| CN104020405A (en) * | 2014-06-26 | 2014-09-03 | 厦门大学 | Pulse type power mode LED voltage-current-junction temperature characteristic testing device |
| CN104681093B (en) * | 2014-12-26 | 2017-10-27 | 复旦大学 | A kind of semiconductor storage unit electrical parameter test system |
| WO2016147361A1 (en) * | 2015-03-18 | 2016-09-22 | 三菱電機株式会社 | Photocoupler diagnostic device |
| CN104730344A (en) * | 2015-03-27 | 2015-06-24 | 西交利物浦大学 | Semiconductor device transient-state capacitance testing method and system |
| CN104766809B (en) * | 2015-03-27 | 2017-11-21 | 西交利物浦大学 | A kind of PN junction temporary charge reservoir spectral measurement method and system |
| CN106771954A (en) * | 2017-03-09 | 2017-05-31 | 广州市昆德科技有限公司 | The capacitor voltage characteristic tester and its method of testing of automatic measurement are carried out to PN junction |
| CN114076885B (en) * | 2020-08-11 | 2023-12-12 | 本源量子计算科技（合肥）股份有限公司 | Quantum chip testing method and device |
| CN112834892B (en) * | 2020-12-31 | 2024-04-09 | 杭州长川科技股份有限公司 | Test circuit, test method and test system for transconductance parameters |
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