CN104143562B - 有机发光二极管显示器 - Google Patents
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Abstract
提供了一种有机发光二极管(OLED)显示器。OLED显示器包括设置在衬底上的电容电极。绝缘层被设置在电容电极上。第一有源层被设置在绝缘层上。第一有源层包括第一掺杂区域、第二掺杂区域和设置在第一掺杂区域与第二掺杂区域之间的第一沟道区域。第一栅电极被设置在第一有源层的第一沟道区域上。有机发光二极管被设置在衬底上。有机发光二极管与第一有源层的第二掺杂区域电耦合。驱动电源线被设置在衬底上,并且与第一有源层的第一掺杂区域以及电容器电耦合。
Description
技术领域
本发明涉及有机发光二极管(OLED)显示器,尤其涉及包括电容器的OLED显示器。
背景技术
在诸如移动电话或者数字电视的电子装置中,有机发光二极管显示器被用于生产数字显示器。有机发光二极管显示器包括响应于电流而发光的、具有有机化合物的层的发光二极管。在无需附加光源的情况下,有机发光二极管显示器可以显示图像,并由此可以被制造为很薄且很轻。此外,有机发光二极管显示器具有高品质特性,诸如低功耗、高亮度和快速的响应速度。
发明内容
根据本发明的示例性实施方式,有机发光二极管(OLED)显示器包括:电容电极、第一薄膜晶体管和有机发光二极管。第一薄膜晶体管被设置在电容电极上。第一薄膜晶体管包括:第一栅电极和第一有源层,第一有源层包括第一掺杂区域、第二掺杂区域和设置在第一掺杂区域与第二掺杂区域之间的第一沟道区域。第一栅电极被设置在第一沟道区域上。第一掺杂区域与电容电极电耦合。第一沟道区域被设置在电容电极上。第一沟道区域与电容电极的重叠区域形成电容器。有机发光二极管连接至第一薄膜晶体管的第二掺杂区域。
根据本发明的示例性实施方式,有机发光二极管(OLED)显示器包括:设置在衬底上的电容电极。绝缘层被设置在电容电极上。第一有源层被设置在绝缘层上。第一有源层包括:第一掺杂区域、第二掺杂区域和设置在第一掺杂区域与第二掺杂区域之间的第一沟道区域。第一栅电极被设置在第一有源层的第一沟道区域上。有机发光二极管被设置在衬底上。有机发光二极管与第一有源层的第二掺杂区域电耦合。驱动电源线被设置在衬底上,并且与第一有源层的第一掺杂区域以及电容器电耦合。
附图说明
通过参照附图详细描述本发明概念的示例性实施方式,本发明的这些特征和其他特征将变得更加明确,在附图中:
图1是示出根据本发明的示例性实施方式的OLED显示器的框图;
图2是示出图1的“A”部分的布局图;
图3是沿着III-III线截取的、图2的剖视图;以及
图4是图3的“B”部分的放大剖视图。
具体实施方式
下面,将参照附图对本发明的示例性实施方式进行详细描述。然而,本发明概念可以以不同形式实现,并且不应解释成受限于本文中记载的实施方式。在附图中,为了清楚起见,层和区域的厚度可以被放大。还应理解的是,当层被称为在另一个层或衬底“上”时,该层可以直接在其他层或衬底上,或者还可以存在有中间层。贯穿全文,类似的附图标记可以表示类似的元件。
下文中,将参照图1至图4对根据本发明的示例性实施方式的有机发光二极管(OLED)显示器进行描述。
图1是示出根据本发明的示例性实施方式的OLED显示器的框图。
如图1所示,OLED显示器1000包括:衬底SUB、栅极驱动器GD、栅极布线GW、数据驱动器DD、数据布线DW和像素PE。这里,像素PE是显示图像的最小单位,并且OLED显示器1000通过多个像素PE显示图像。
衬底SUB由透明的绝缘衬底形成,透明的绝缘沉底包括玻璃、石英、陶瓷或塑料。然而,本发明并不限于此,衬底SUB可以由金属衬底形成,金属衬底包括但不限于不锈钢。此外,当衬底SUB由塑料制成时,OLED显示器1000可以是柔性的、可拉伸的、或者可卷曲的。
对应于从诸如时序控制器等的外部控制电路(未示出)供给的控制信号,栅极驱动器GD将扫描信号依次供给到栅极布线GW。然后,通过扫描信号选择像素PE,并且所述像素PE依次接收数据信号。
栅极布线GW被设置在衬底SUB上并沿着第一方向延伸。栅极布线GW包括连接至栅极驱动器GD的扫描线S1至扫描线Sn,并从栅极驱动器GD接收扫描信号。
栅极布线GW可以包括附加的扫描线、初始化电源线、或者发光控制线。在这种情况下,显示装置可以是具有6晶体管-2电容器结构的有源矩阵(AM)型OLED显示器。
数据驱动器DD将数据信号供给到数据布线DW之中的数据线Dm。数据信号对应于从外侧(如时序控制器)供给的控制信号。供给到数据线Dm的数据信号被供给到通过从扫描线S1供给的扫描信号选择的像素PE。然后,像素PE利用与数据信号对应的电压进行充电,并且发出具有与充电电压对应亮度的光。
数据布线DW可被设置在栅极布线GW上或者设置在栅极布线GW与衬底SUB之间,并且沿着与第一方向交叉的第二方向延伸。数据布线DW包括数据线D1至数据线Dm和驱动电源线ELVDDL。数据线D1至数据线Dm连接至数据驱动器DD并从数据驱动器DD接收数据信号。驱动电源线ELVDDL与数据线D1至数据线Dm相隔并在第二方向上延伸,并且连接至外部第一电源ELVDD并从该外部第一电源ELVDD接收驱动电力。
像素PE被设置在栅极布线GW与数据布线DW彼此交叉的区域处。像素PE连接至栅极布线GW和数据布线DW。各个像素PE包括:两个薄膜晶体管、电容器和有机发光元件;两个薄膜晶体管连接至栅极布线GW和数据布线DW,有机发光元件连接至第二电源ELVSS。当通过扫描线S1供给扫描信号时选择像素PE,并由此利用与流经数据线Dm的数据信号对应的电压对像素PE进行充电,并且发出具有与充电电压对应的预定亮度的光。将在稍后对像素PE的布置进行详细描述。
下文中,将参照图2和图3对像素PE的结构进行描述。
图2是示出图1的“A”部分的布局图。图3是沿着III-III线截取的、图2的剖视图。
如图2和图3所示,各个像素PE具有2晶体管-1电容器结构,该结构中布置有有机发光二极管(OLED)、第一薄膜晶体管T1、第二薄膜晶体管T2和电容器C。然而,本发明的像素结构并不限于此,并且像素结构可以包括三个或更多薄膜晶体管和两个或更多电容器。
有机发光二极管OLED连接至第一薄膜晶体管T1,并且包括第一电极E1、第二电极E2和有机发光层OL;第一电极E1为充当空穴注入电极的阳极,第二电极E2为充当电子注入电极的阴极,有机发光层OL被设置在第一电极E1与第二电极E2之间。
第一电极E1为光透射电极,第二电极E2为光反射电极。例如,从有机发光层OL发出的光被第二电极E2反射并且通过第一电极E1,然后从OLED显示器1000的底部被观察到。
与此同时,在根据本发明的另一示例性实施方式的OLED显示器中,第一电极和第二电极中一个或多个可以由光透射电极形成。例如,第一电极由光反射电极形成而第二电极可以由光透射电极形成,或者第一电极和第二电极分别可以由光透射电极形成。
第二薄膜晶体管T2包括:第二栅电极G2、第二有源层A2、第二源极S2和第二漏极D2。
第二栅电极G2连接至扫描线Sn。对应于第二栅电极G2,第二有源层A2被设置成与第二栅电极G2重叠。第二有源层A2的两个侧端分别连接至第二源极S2和第二漏极D2。第二源极S2连接至数据线Dm。第二漏极D2与第二源极S2相隔,第二栅电极G2置于二者之间。第二漏极D2连接至第一薄膜晶体管T1的第一栅电极G1。例如,第二有源层A2连接在数据线Dm与第一栅电极G1之间。
第一薄膜晶体管T1包括:第一栅电极G1、第一有源层A1、第一源极S1和第一漏极D1。
第一栅电极G1连接至第二薄膜晶体管T2的第二漏极D2。第一栅电极G1被设置在第一有源层A1上,并且对应于第一有源层A1的沟道区域CA。
第一有源层A1与第一栅电极G1和电容器C的电容电极CE重叠,并且被设置在第一栅电极G1与电容电极CE之间。第一有源层A1连接在驱动电源线ELVDDL与有机发光二极管OLED之间,并且包括源区域SA、漏区域DA和沟道区域CA;源区域SA连接至第一源极S1,漏区域DA连接至第一漏极D1,沟道区域CA设置在源区域SA与漏区域DA之间。
第一有源层A1的沟道区域CA包括P-型掺杂半导体或N-型掺杂半导体,源区域SA和漏区域DA分别包括掺杂杂质的导体。第一有源层A1可以包括多晶硅或氧化物。
第一有源层A1被设置在电容电极CE上。绝缘层IL被设置在第一有源层A1与电容电极CE之间。当电力被供给到第一栅电极G1时,第一有源层A1的沟道区域CA和电容电极CE形成电容器C。
第一源极S1与第一漏极D1彼此相隔。第一栅电极G1被设置在连接至源区域SA的第一源极S1与连接至漏区域DA的第一漏极D1之间。第一源极S1连接至驱动电源线ELVDDL,第一漏极D1连接至作为有机发光二极管OLED的阳极的第一电极E1。第一源极S1与驱动电源线ELVDDL整体地形成,并且通过第一接触孔CH1连接至第一有源层A1。例如,驱动电源线ELVDDL通过第一接触孔CH1连接至第一有源层A1。
电容器C包括:电容电极CE和第一有源层A1的沟道区域CA,设置在二者之间的绝缘层IL。
电容电极CE通过驱动电源线ELVDDL连接至第一有源层A1,并且与第一栅电极G1重叠,电容电极CE与第一栅电极G1之间隔着第一有源层A1。当电力被供给到第一栅电极G1时,电容电极CE与第一有源层A1的沟道区域CA形成电容器C。电容电极CE为包括掺杂有杂质的非晶硅或掺杂有杂质的多晶硅的导体。电容电极CE通过第二接触孔CH2连接至驱动电源线ELVDDL。例如,电容电极CE通过第二接触孔CH2连接至驱动电源线ELVDDL,并且驱动电源线ELVDDL与电容电极CE可以通过填充到第二接触孔CH2中的附加的导电材料(例如,铝(Al)和银(Ag))彼此连接。电容电极CE具有比第一有源层A1更大的面积,但是这不是限制性的。电容电极CE可以具有与第一有源层A1的面积基本相等的面积,或者可以具有比第一有源层A1更小的面积。
下文中,将参照图2至图4对像素PE的操作进行描述。
图4是图3的“B”部分的放大剖视图。
如图2至图4所示,首先,当电力通过扫描线Sn被供给到第二栅电极G2并由此使得第二薄膜晶体管T2被导通时,通过数据线Dm供给的电压被施加到第一栅电极G1中每个。第一外部电源ELVDD通过驱动电源线ELVDDL被施加到第一漏极D1。第一栅电极G1与第一漏极D1之间的电压差生成强电场,从而在沟道区域CA中生成多个电子-空穴对。在这种情况下,因为沟道区域CA为P-型掺杂半导体(或者N-型掺杂半导体),未与空穴(或者电子e-)复合的电子e-(或者空穴h+)被积累在沟道区域CA的底部中。例如,发生浮体效应。积累在沟道区域CA的底部中的电子e-层(或者空穴h+层)充当电容器C的另一电极,从而电容电极CE与电子e-层(或者空穴h+层)形成电容器C,并且电容器C被充电。
例如,电容电极CE与驱动电源线ELVDDL耦合,第一栅电极G1通过第二薄膜晶体管T2与数据线Dm耦合,由此通过浮体效应在第一有源层A1的沟道区域CA底部处积累电子e-层(或者空穴h+层),并因此,电子e-层(或者空穴h+层)充当电容器C的另一电极,从而对电容器C充电。
例如,在该点处被充电的电荷量与从数据线Dm施加的电压成正比。此外,当第二薄膜晶体管T2处于截止状态时,第一薄膜晶体管T1使用充电在电容器C中的电势将驱动电源线ELVDDL的电压传递至有机发光二极管OLED。例如,当电容器C的充电电势超出薄膜晶体管T1的阈值电压时,第一晶体管导通。然后,施加到驱动电源线ELVDDL的电压通过第一薄膜晶体管T1被施加到有机发光二极管OLED,并因此,有机发光二极管OLED发光。
如上所述,在根据本发明的示例性实施方式的OLED显示器中,电容电极CE与第一有源层A1的P-型或N型掺杂沟道区域CA重叠,以便沟道区域CA与电容电极CE形成电容器C,从而用于电容器C的空间可被最小化。
例如,因为电容器C可以与第一有源层A1重叠,所以可以在有限的区域中设置更多的像素。因此,OLED显示器1000可以在有限的区域中具有高分辨率。
此外,可以增加第一电极E1的尺寸,从而最大限度地增加有机发光二极管OLED的整体孔径比。此外,各个像素的电容器C可以与第一有源层A1重叠,并由此增加了第一电极E1的尺寸。因此,通过最大限度地增加像素的孔径比,能够提升显示品质。
虽然已参照本发明的示例性实施方式示出和描述了本发明概念,但是本领域的普通技术人员应明确,在不背离由所附权利要求书所限定的本发明概念的精神和范围的情况下可以在形式和细节上对本发明进行多种修改。
Claims (8)
1.一种有机发光二极管显示器,包括:
电容电极;
第一薄膜晶体管,设置在所述电容电极上,
其中,所述第一薄膜晶体管包括第一栅电极和第一有源层,所述第一有源层包括第一掺杂区域、第二掺杂区域和设置在所述第一掺杂区域与所述第二掺杂区域之间的第一沟道区域,
其中,所述第一栅电极被设置在所述第一沟道区域上,
其中,所述第一掺杂区域与所述电容电极电耦合,
其中,所述第一沟道区域被设置在所述电容电极上,以及
其中,所述第一沟道区域与所述电容电极的重叠区域形成电容器;
有机发光二极管,连接至所述第一薄膜晶体管的所述第二掺杂区域;以及
驱动电源线,传输第一外部电源的恒定电压,并连接至所述第一有源层的所述第一掺杂区域以及所述电容电极,
其中所述电容电极充当所述电容器的一个电极,并且通过电子或空穴积累在所述第一沟道区域的底部中的浮体效应,所述第一沟道区域的所述底部充当所述电容器的另一电极。
2.如权利要求1所述的有机发光二极管显示器,其中,所述第一有源层的所述第一沟道区域包括:P-型掺杂半导体或者N-型掺杂半导体。
3.如权利要求2所述的有机发光二极管显示器,还包括:绝缘层,设置在所述第一有源层与所述电容电极之间。
4.如权利要求3所述的有机发光二极管显示器,其中,所述电容电极包括:掺杂有杂质的非晶硅或者掺杂有杂质的多晶硅。
5.如权利要求1所述的有机发光二极管显示器,还包括:
扫描线,沿着第一方向延伸;
数据线,沿着与所述第一方向交叉的第二方向延伸;以及
第二薄膜晶体管,包括第二栅电极、第一电极和第二电极,其中,所述第二栅电极连接至所述扫描线,所述第一电极连接至所述数据线,所述第二电极连接至所述第一薄膜晶体管的所述第一栅电极;
其中,所述驱动电源线在远离所述数据线处沿着所述第二方向延伸。
6.如权利要求5所述的有机发光二极管显示器,其中,所述驱动电源线通过第一接触孔连接至所述第一掺杂区域,并且通过第二接触孔连接至所述电容电极。
7.如权利要求1所述的有机发光二极管显示器,其中,所述有机发光二极管包括:
第一电极,与所述第一有源层的所述第二掺杂区域电耦合;
有机发光层,设置在所述第一电极上;以及
第二电极,设置在所述有机发光层上。
8.如权利要求7所述的有机发光二极管显示器,其中,所述第一电极为光透射电极,所述第二电极为光反射电极。
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