CN104134637A - Radiating structure for high-power logic chip PoP - Google Patents

Radiating structure for high-power logic chip PoP Download PDF

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Publication number
CN104134637A
CN104134637A CN201410380771.8A CN201410380771A CN104134637A CN 104134637 A CN104134637 A CN 104134637A CN 201410380771 A CN201410380771 A CN 201410380771A CN 104134637 A CN104134637 A CN 104134637A
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CN
China
Prior art keywords
micro
encapsulation
coolant
spray chamber
lower floor
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Application number
CN201410380771.8A
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Chinese (zh)
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CN104134637B (en
Inventor
侯峰泽
林挺宇
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National Center for Advanced Packaging Co Ltd
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National Center for Advanced Packaging Co Ltd
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Priority to CN201410380771.8A priority Critical patent/CN104134637B/en
Publication of CN104134637A publication Critical patent/CN104134637A/en
Priority to US14/703,476 priority patent/US9653378B2/en
Application granted granted Critical
Publication of CN104134637B publication Critical patent/CN104134637B/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

The invention relates to a radiating structure for high-power logic chip PoP. Bottom supporting balls are welded to the upper surface of a printed circuit board. An organic substrate is arranged on the bottom supporting balls. A lower-layer package body is fixedly arranged on the upper surface of the organic substrate. A communication hole is formed in the lower-layer package body. A micro jet cavity body is arranged inside the lower-layer packaging body. A heat conducting thin film is arranged on an upper cavity plate of the micro jet cavity body. A cooling medium inlet is formed in the middle of a lower cavity plate of the micro jet cavity body. The left end and the right end of the lower cavity plate of the micro jet cavity body are provided with cooling medium outlets. The upper surface of the lower-layer packaging body is provided with double-layer packaging supporting balls. An upper-layer package substrate is arranged on the double-layer package supporting balls. An upper-layer package body is fixedly arranged on the upper surface of the upper-layer package substrate. A cooling pump and a heat exchanger are fixedly arranged on the upper surface of the printed circuit board. According to the radiating structure for the high-power logic chip PoP, heat generated by chips can be transmitted out of the PoP as soon as possible, and therefore the radiating capacity of the high-power chip PoP is improved.

Description

For the radiator structure of high-power logic chip PoP encapsulation
Technical field
The present invention relates to a kind of chip-packaging structure, the present invention especially relates to a kind of radiator structure for high-power logic chip PoP encapsulation.
Background technology
PoP(Package on Package) encapsulation is the three-dimension packaging structure of a kind of simultaneously integrated logic chip and storage chip, obtained increasing application, such as i Phone, BlackBerry and panel computer etc.But stacking due to levels encapsulation, makes the air flow property between encapsulation poor, causes the heat dispersion of encapsulation poor, especially, for the ever-increasing logic chip of lower floor's encapsulation power consumption, heat dissipation problem is more serious.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of and can strengthen the air flow property between encapsulation, the radiator structure for high-power logic chip PoP encapsulation of raising heat dispersion.
According to technical scheme provided by the invention, the described radiator structure for high-power logic chip PoP encapsulation, be welded with bottom support ball at the upper surface of printed substrate, on bottom support ball, be provided with organic substrate, be fixed with lower floor's packaging body at the upper surface of organic substrate, on lower floor's packaging body, offer linked hole, linked hole runs through the upper and lower surface of lower floor's packaging body, in lower floor's packaging body, be provided with micro-spray chamber body, in the cavity plate of micro-spray chamber body, be provided with heat conduction film, cavity of resorption plate middle part at micro-spray chamber body offers coolant entrance, offer coolant outlet at the both ends, cavity of resorption plate left and right of micro-spray chamber body, be provided with double-deck encapsulation fulcrum ball at the upper surface of lower floor's packaging body, on bilayer encapsulation fulcrum ball, be provided with layer package substrate, be fixed with upper strata packaging body at the upper surface of upper layer package substrate, upper surface at the printed substrate on described bottom support ball right side is fixed with coolant pump, upper surface at the printed substrate on coolant pump right side is fixed with heat exchanger, between cooling delivery side of pump and coolant entrance, be connected by the first connecting tube, the outlet of heat exchanger is connected by the second connecting tube with the entrance of coolant pump, and coolant outlet is connected by the 3rd connecting tube with the entrance of heat exchanger.
Set up dividing plate at the left plate of micro-spray chamber body and the middle part of right plate, on dividing plate, offered dividing plate via hole.
Described the first connecting tube and the 3rd connecting tube get around bottom support ball.
Described linked hole is conical, and large mouthful of linked hole be upper, the osculum of linked hole under.
The present invention adopts active heat removal mode, and micro jet flow heat dissipation technology is applied in PoP packaged high-power processor chips, contributes to the heat as early as possible chip being produced to conduct to outside encapsulation, thereby improves the heat-sinking capability of high-power chip PoP encapsulation.
Brief description of the drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation of micro-spray chamber body in the present invention.
Fig. 3 is A-A cutaway view of Fig. 2.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
This is used for the radiator structure of high-power logic chip PoP encapsulation, be welded with bottom support ball 102 at the upper surface of printed substrate 600, on bottom support ball 102, be provided with organic substrate 101, be fixed with lower floor's packaging body 107 at the upper surface of organic substrate 101, on lower floor's packaging body 107, offer linked hole 108, linked hole 108 runs through the upper and lower surface of lower floor's packaging body 107, in lower floor's packaging body 107, be provided with micro-spray chamber body 103, in the cavity plate of micro-spray chamber body 103, be provided with heat conduction film 104, cavity of resorption plate middle part at micro-spray chamber body 103 offers coolant entrance 111, offer coolant outlet 112 at the both ends, cavity of resorption plate left and right of micro-spray chamber body 103, be provided with double-deck encapsulation fulcrum ball 200 at the upper surface of lower floor's packaging body 107, on bilayer encapsulation fulcrum ball 200, be provided with layer package substrate 301, be fixed with upper strata packaging body 305 at the upper surface of upper layer package substrate 301, upper surface at the printed substrate 600 on described bottom support ball 102 right sides is fixed with coolant pump 400, upper surface at the printed substrate 600 on coolant pump 400 right sides is fixed with heat exchanger 500, between the outlet of coolant pump 400 and coolant entrance 111, be connected by the first connecting tube 700, the outlet of heat exchanger 500 is connected by the second connecting tube 800 with the entrance of coolant pump 400, and coolant outlet 112 is connected by the 3rd connecting tube 900 with the entrance of heat exchanger 500.
Set up dividing plate 109 at the left plate of micro-spray chamber body 103 and the middle part of right plate, on dividing plate 109, offered dividing plate via hole 110.
Described the first connecting tube 700 and the 3rd connecting tube 900 get around bottom support ball 102.
Described linked hole 108 is conical, and large mouthful of linked hole 108 be upper, the osculum of linked hole 108 under.
Organic substrate 101, bottom support ball 102, micro-spray chamber body 103, heat conduction film 104, high-power chip 105, lead-in wire 106, lower floor's packaging body 107, linked hole 108, dividing plate 109, dividing plate via hole 110, coolant entrance 111 are collectively referred to as lower floor's encapsulation 100 with coolant outlet 112.
Upper layer package substrate 301, the first upper strata sealed storage chip 302, the second upper strata sealed storage chip 303, upper strata package lead 304 are collectively referred to as upper strata encapsulation 300 with upper strata packaging body 305.
The present invention is assembled into micro-spray chamber body 103 lower surface of high-power logic chip 105, and coolant entrance 111 and coolant outlet 112 extract.High-power chip 105 106 is bonded on organic substrate 101 by going between, the upper surface of the upper layer package substrate 301 in upper strata packaging body 305 is fixed with the second upper strata sealed storage chip 303, be provided with the first upper strata sealed storage chip 302 at the second upper strata sealed storage chip 303 upper surfaces, the second upper strata sealed storage chip 303 and the first upper strata sealed storage chip 302 are bonded on upper layer package substrate 301 by upper strata package lead 304, the heat conduction film 104 of high heat-conductive diamond material is at high-power chip 105 lower surfaces, micro-spray coolant adopts deionized water or liquid metal, by coolant pump 400 pressurised driving, deionized water or the liquid metal coolant entrance 111 of flowing through is entered in micro-spray chamber body 103, when high-power chip 105 is worked, uniformity of temperature profile, avoid part to occur focus, micro-spray chamber body 103 includes a dividing plate 109, on dividing plate, there are several dividing plate via holes 110, deionized water or liquid metal are through via hole, evenly be sprayed onto the cavity plate of micro-spray chamber body 103, absorb the heat that high-power chip 105 produces, ionized water or liquid metal be heated cooling after, be back to heat exchanger 500 from both sides coolant outlet 112, carry out heat convection by heat exchanger 500 and surrounding air, complete a circulation, so iterative cycles, the heat constantly high-power chip 105 being produced is transmitted in heat exchanger 500, be delivered in surrounding environment finally by cross-ventilation.
Radiator structure of the present invention adopts following steps in the time making:
Make organic substrate 101, and on organic substrate 101, make three via holes;
Make micro-spray chamber body 103, micro-spray chamber body 103 includes a dividing plate 109, has several dividing plate via holes 110 on dividing plate 109, and micro-spray chamber body 103 comprises two coolant outlets 112 and a coolant entrance 111;
Micro-spray chamber body 103 is assembled in to the upper surface of organic substrate 101;
Paste at micro-spray chamber body 103 upper surfaces the heat conduction film 104 that one deck Diamond Films With High Thermal Conductivity is made;
High-power chip 105 Surface Mounts are on heat conduction film 104, and lead-in wire 106 is bonded on organic substrate 101;
Embedding lower floor packaging body 107, heat-pressure curing, lower floor's packaging body 107 plays the effect of protection upper strata package lead 304;
Complete the interconnection of the encapsulation 300 of PoP upper strata and lower floor's encapsulation 100;
On the pad at lower floor's encapsulation organic substrate 101 back sides, brush scaling powder, steel mesh is planted BGA bottom support ball 102, refluxes, and forms PoP encapsulation;
PoP encapsulation, coolant pump 400 and heat exchanger 500 are assembled on same pcb board;
Adopt the first connecting tube 700 that the coolant entrance 111 in PoP lower floor encapsulation 100 and the outlet of coolant pump 400 are coupled together; Adopt the 3rd connecting tube 900 that the coolant outlet 112 in the encapsulation of PoP lower floor and the entrance of heat exchanger 500 are coupled together; Adopt the second connecting tube 800 that the entrance of the outlet of heat exchanger 500 and coolant pump 400 is coupled together.

Claims (4)

1. the radiator structure for high-power logic chip PoP encapsulation, it is characterized in that: be welded with bottom support ball (102) at the upper surface of printed substrate (600), on bottom support ball (102), be provided with organic substrate (101), be fixed with lower floor's packaging body (107) at the upper surface of organic substrate (101), on lower floor's packaging body (107), offer linked hole (108), linked hole (108) runs through the upper and lower surface of lower floor's packaging body (107), in lower floor's packaging body (107), be provided with micro-spray chamber body (103), in the cavity plate of micro-spray chamber body (103), be provided with heat conduction film (104), cavity of resorption plate middle part at micro-spray chamber body (103) offers coolant entrance (111), offer coolant outlet (112) at the both ends, cavity of resorption plate left and right of micro-spray chamber body (103), be provided with double-deck encapsulation fulcrum ball (200) at the upper surface of lower floor's packaging body (107), on bilayer encapsulation fulcrum ball (200), be provided with upper layer package substrate (301), be fixed with upper strata packaging body (305) at the upper surface of upper layer package substrate (301), upper surface at the printed substrate (600) on described bottom support ball (102) right side is fixed with coolant pump (400), upper surface at the printed substrate (600) on coolant pump (400) right side is fixed with heat exchanger (500), between the outlet of coolant pump (400) and coolant entrance (111), be connected by the first connecting tube (700), the outlet of heat exchanger (500) is connected by the second connecting tube (800) with the entrance of coolant pump (400), and coolant outlet (112) is connected by the 3rd connecting tube (900) with the entrance of heat exchanger (500).
2. the radiator structure for high-power logic chip PoP encapsulation as claimed in claim 1, it is characterized in that: set up dividing plate (109) at the left plate of micro-spray chamber body (103) and the middle part of right plate, on dividing plate (109), offered dividing plate via hole (110).
3. the radiator structure for high-power logic chip PoP encapsulation as claimed in claim 1, is characterized in that: described the first connecting tube (700) gets around bottom support ball (102) with the 3rd connecting tube (900).
4. the radiator structure for high-power logic chip PoP encapsulation as claimed in claim 1, is characterized in that: described linked hole (108) is for conical, and large mouthful of linked hole (108) be upper, the osculum of linked hole (108) under.
CN201410380771.8A 2014-08-04 2014-08-04 Radiating structure for high-power logic chip PoP Active CN104134637B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201410380771.8A CN104134637B (en) 2014-08-04 2014-08-04 Radiating structure for high-power logic chip PoP
US14/703,476 US9653378B2 (en) 2014-08-04 2015-05-04 Heat dissipation solution for advanced chip packages

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410380771.8A CN104134637B (en) 2014-08-04 2014-08-04 Radiating structure for high-power logic chip PoP

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CN104134637B CN104134637B (en) 2017-04-12

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105552046A (en) * 2015-12-04 2016-05-04 成都锐华光电技术有限责任公司 Novel packaging inner chip heat radiation assembly and heat radiation system
CN106449569A (en) * 2016-10-24 2017-02-22 华进半导体封装先导技术研发中心有限公司 Stacked-chip micro-channel heat dissipation structure and preparation method
CN110707055A (en) * 2019-09-11 2020-01-17 长江存储科技有限责任公司 Chip and electronic device
CN111128917A (en) * 2019-12-30 2020-05-08 上海先方半导体有限公司 Chip packaging structure and manufacturing method thereof
CN111755211A (en) * 2020-05-26 2020-10-09 甬矽电子(宁波)股份有限公司 Power module and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050068725A1 (en) * 2003-09-30 2005-03-31 Sabina Houle Thermal management systems for micro-components
US20070103868A1 (en) * 2004-02-16 2007-05-10 Sony Computer Entertainment Inc. Electronic device cooling device and electronic device cooling method
US20120048515A1 (en) * 2010-08-31 2012-03-01 Teledyne Scientific & Imaging, Llc High Power Module Cooling System
US20140097513A1 (en) * 2012-10-08 2014-04-10 Jong-Joo Lee Package-on-Package Type Package Including Integrated Circuit Devices and Associated Passive Components on Different Levels

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050068725A1 (en) * 2003-09-30 2005-03-31 Sabina Houle Thermal management systems for micro-components
US20070103868A1 (en) * 2004-02-16 2007-05-10 Sony Computer Entertainment Inc. Electronic device cooling device and electronic device cooling method
US20120048515A1 (en) * 2010-08-31 2012-03-01 Teledyne Scientific & Imaging, Llc High Power Module Cooling System
US20140097513A1 (en) * 2012-10-08 2014-04-10 Jong-Joo Lee Package-on-Package Type Package Including Integrated Circuit Devices and Associated Passive Components on Different Levels

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105552046A (en) * 2015-12-04 2016-05-04 成都锐华光电技术有限责任公司 Novel packaging inner chip heat radiation assembly and heat radiation system
CN106449569A (en) * 2016-10-24 2017-02-22 华进半导体封装先导技术研发中心有限公司 Stacked-chip micro-channel heat dissipation structure and preparation method
CN106449569B (en) * 2016-10-24 2018-11-23 华进半导体封装先导技术研发中心有限公司 Laminated chips fluid channel radiator structure and preparation method
CN110707055A (en) * 2019-09-11 2020-01-17 长江存储科技有限责任公司 Chip and electronic device
CN111128917A (en) * 2019-12-30 2020-05-08 上海先方半导体有限公司 Chip packaging structure and manufacturing method thereof
CN111755211A (en) * 2020-05-26 2020-10-09 甬矽电子(宁波)股份有限公司 Power module and manufacturing method thereof
CN111755211B (en) * 2020-05-26 2021-04-23 甬矽电子(宁波)股份有限公司 Power module and manufacturing method thereof

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