CN104124218A - Heat dissipation structure for 2.5D/3DTSV high-power chip package - Google Patents
Heat dissipation structure for 2.5D/3DTSV high-power chip package Download PDFInfo
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- CN104124218A CN104124218A CN201410380524.8A CN201410380524A CN104124218A CN 104124218 A CN104124218 A CN 104124218A CN 201410380524 A CN201410380524 A CN 201410380524A CN 104124218 A CN104124218 A CN 104124218A
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- spray chamber
- chamber body
- underfill material
- coolant
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Abstract
The invention relates to a heat dissipation structure for a 2.5D/3DTSV high-power chip package. According to the heat dissipation structure, a support ball is welded on the upper surface of a printed circuit board; an organic substrate is arranged on the support ball; a moulded body is fixed on the upper surface of the organic substrate; a micro-jet cavity is formed in the moulded body; a first bottom filler is arranged below the micro-jet cavity; a chip installation convex point is arranged in the first bottom filler; an adapting plate is arranged below the first bottom filler; an insulation layer is arranged on the upper surface of the adapting plate; a front surface re-wiring layer for the adapting plate is arranged in the insulation layer; a back surface re-wiring layer is arranged on the lower surface of the adapting plate; a second bottom filler is arranged below the first bottom filler; a cylindrical convex point is arranged in the second bottom filler; a heat exchanger and a cooling pump are fixed on the upper surface of the printed circuit board at the right side of the support ball. The heat dissipation structure disclosed by the invention contributes to conduct the heat generated by the high-power chip to the outside of the package, thus improving the heat dissipation capacity of the 2.5D/3DTSV high-power chip.
Description
Technical field
The present invention relates to a kind of chip-packaging structure, the present invention especially relates to a kind of radiator structure for the encapsulation of 2.5D/3D TSV high-power chip.
Background technology
High-power chip, especially power density reaches 350W/cm
2above chip, and Hotspot(focus) reach 10KW/cm
2above chip, the heat that chip produces is difficult to conduct in encapsulating.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of heat as early as possible high-power chip being produced that contributes to conduct to the radiator structure for the encapsulation of 2.5D/3D TSV high-power chip that encapsulates outward and improve the heat-sinking capability of chip package.
According to technical scheme provided by the invention, the described radiator structure for the encapsulation of 2.5D/3D TSV high-power chip, upper surface at printed substrate is welded with fulcrum ball, on fulcrum ball, be provided with organic substrate, upper surface at organic substrate is fixed with mould plastic-sealed body, in mould plastic-sealed body, be provided with micro-spray chamber body, in the cavity plate of micro-spray chamber body, offer coolant entrance, right plate at micro-spray chamber body offers coolant outlet, below micro-spray chamber body, be provided with the first underfill material, between the upper surface of the first underfill material and the cavity of resorption plate of micro-spray chamber body, be provided with chip assemblage gap, in the first underfill material, be provided with chip salient point is installed, below the first underfill material, be provided with keyset, the upper surface of keyset is provided with insulating barrier, the front that is provided with keyset in insulating barrier is wiring layer again, the lower surface of keyset is provided with back side wiring layer again, below the first underfill material, be provided with the second underfill material, in the second underfill material, be provided with columnar bump, the upper end of columnar bump and the back side again wiring layer contact, the bottom of columnar bump contacts with the upper surface of organic substrate, upper surface at the printed substrate on fulcrum ball right side is fixed with heat exchanger, upper surface at heat exchanger right side printed substrate is fixed with coolant pump, between the outlet of described heat exchanger and the entrance of coolant pump, by the first connecting tube, be connected, between cooling delivery side of pump and coolant entrance, by the second connecting tube, be connected, between the entrance of coolant outlet and heat exchanger, by the 3rd connecting tube, be connected.
At the left plate of micro-spray chamber body and the medium position of right plate, be fixed with dividing plate, on dividing plate, offer dividing plate via hole, and the outlet of described coolant is opened in the right plate of micro-spray chamber body of dividing plate below.
The present invention adopts active heat removal mode, be that micro jet flow heat dissipation technology is applied to the encapsulation of 2.5D/3D TSV high-power chip, contribute to the heat as early as possible high-power chip being produced to conduct to outside encapsulation, thereby improve the heat-sinking capability of 2.5D/3D TSV high-power chip encapsulation.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation of micro-spray chamber body in the present invention.
Fig. 3 is A-A cutaway view of Fig. 2.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Should be for the radiator structure of 2.5D/3D TSV high-power chip encapsulation, upper surface at printed substrate 700 is welded with fulcrum ball 101, on fulcrum ball 101, be provided with organic substrate 102, upper surface at organic substrate 102 is fixed with mould plastic-sealed body 113, in mould plastic-sealed body 113, be provided with micro-spray chamber body 112, in the cavity plate of micro-spray chamber body 112, offer coolant entrance 116, right plate at micro-spray chamber body 112 offers coolant outlet 117, below micro-spray chamber body 112, be provided with the first underfill material 110, between the upper surface of the first underfill material 110 and the cavity of resorption plate of micro-spray chamber body 112, be provided with chip assemblage gap, in the first underfill material 110, be provided with chip salient point 109 is installed, below the first underfill material 110, be provided with keyset 106, the upper surface of keyset 106 is provided with insulating barrier 107, the front that is provided with keyset 106 in insulating barrier 107 is wiring layer 108 again, the lower surface of keyset 106 is provided with back side wiring layer 105 again, below the first underfill material 110, be provided with the second underfill material 104, in the second underfill material 104, be provided with columnar bump 103, the upper end of columnar bump 103 and the back side again wiring layer 105 contact, the bottom of columnar bump 103 contacts with the upper surface of organic substrate 102, upper surface at the printed substrate 700 on fulcrum ball 101 right sides is fixed with heat exchanger 300, upper surface at heat exchanger 300 right side printed substrates 700 is fixed with coolant pump 200, between the entrance of the outlet of described heat exchanger 300 and coolant pump 200, by the first connecting tube 600, be connected, between the outlet of coolant pump 200 and coolant entrance 116, by the second connecting tube 400, be connected, between the entrance of coolant outlet 117 and heat exchanger 300, by the 3rd connecting tube 500, be connected.
At the left plate of micro-spray chamber body 112 and the medium position of right plate, be fixed with dividing plate 114, on dividing plate 114, offer dividing plate via hole 115, and described coolant outlet 117 is opened in the right plate of micro-spray chamber body 112 of dividing plate 114 belows.
The present invention is assembled into 2.5D/3D TSV high-power chip upper surface by micro-spray chamber body 112, and coolant entrance 116 and coolant outlet 117 extract, and after embedding mould plastic-sealed body 113 solidifies, forms.2.5D/3D TSV high-power chip encapsulation 100, coolant pump 200 and heat exchanger 300 are assembled on printed substrate 700.Micro-spray coolant adopts deionized water or liquid metal, by coolant pump 200 pressurised driving, deionized water or the liquid metal coolant entrance 116 of flowing through is entered in micro-spray chamber body 112, when making high-power chip 111 work, uniformity of temperature profile, avoid part to occur focus, micro-spray chamber body 112 includes a dividing plate 114, on dividing plate, there are several via holes 115, deionized water or liquid metal are through via hole, evenly be sprayed onto cavity upper surface, absorb the heat that high-power chip 111 produces, ionized water or liquid metal be heated cooling after, from coolant outlet 117, be back to heat exchanger 300, by heat exchanger 300 and surrounding air, carry out heat convection, complete a circulation, iterative cycles like this, the heat constantly high-power chip 111 being produced is transmitted to heat exchanger 300, finally by cross-ventilation, be delivered in surrounding environment.
Manufacturing process of the present invention is as follows:
Make micro-spray chamber body 112, micro-spray chamber body 112 includes a dividing plate 114, has several dividing plate via holes 115 on dividing plate 114, and micro-spray chamber body 112 comprises 117 and coolant entrances 116 of a coolant outlet;
Micro-spray chamber body 112 is assembled in to the upper surface of high-power chip 111, and draws two the second connecting tube 400 and the 3rd connecting tubes 500 that connect respectively micro-spray chamber body entrance and exit;
Embedding mould plastic-sealed body 113, exposes two the second connecting tube 400 and the 3rd connecting tubes 500 that connect respectively micro-spray chamber body entrance and exit, heat-pressure curing;
On the pad at organic substrate 101 back sides, brush scaling powder, steel mesh is planted BGA fulcrum ball 101, refluxes, and forms 2.5D/3D TSV high-power chip encapsulation 100;
2.5D/3D TSV high-power chip encapsulation 100, coolant pump 200 and heat exchanger 300 are assembled on same printed substrate 700;
Adopt the second connecting tube 400 that the coolant entrance 116 in 2.5D/3D TSV high-power chip encapsulation 100 and the outlet of coolant pump 200 are coupled together; Adopt the 3rd connecting tube 500 that the coolant outlet 117 in 2.5D/3D TSV high-power chip encapsulation 100 and the entrance of heat exchanger 300 are coupled together; Adopt the first connecting tube 600 that the entrance of the outlet of heat exchanger 300 and coolant pump 200 is coupled together.
Claims (2)
1. the radiator structure for 2.5D/3D TSV high-power chip encapsulation, it is characterized in that: the upper surface at printed substrate (700) is welded with fulcrum ball (101), on fulcrum ball (101), be provided with organic substrate (102), upper surface at organic substrate (102) is fixed with mould plastic-sealed body (113), in mould plastic-sealed body (113), be provided with micro-spray chamber body (112), in the cavity plate of micro-spray chamber body (112), offer coolant entrance (116), right plate at micro-spray chamber body (112) offers coolant outlet (117), in the below of micro-spray chamber body (112), be provided with the first underfill material (110), between the upper surface of the first underfill material (110) and the cavity of resorption plate of micro-spray chamber body (112), be provided with chip assemblage gap, in the first underfill material (110), be provided with chip salient point (109) is installed, in the below of the first underfill material (110), be provided with keyset (106), the upper surface of keyset (106) is provided with insulating barrier (107), the front that is provided with keyset (106) in insulating barrier (107) is wiring layer (108) again, the lower surface of keyset (106) is provided with back side wiring layer (105) again, in the below of the first underfill material (110), be provided with the second underfill material (104), in the second underfill material (104), be provided with columnar bump (103), the upper end of columnar bump (103) and the back side again wiring layer (105) contact, the bottom of columnar bump (103) contacts with the upper surface of organic substrate (102), upper surface at the printed substrate (700) on fulcrum ball (101) right side is fixed with heat exchanger (300), upper surface at heat exchanger (300) right side printed substrate (700) is fixed with coolant pump (200), between the outlet of described heat exchanger (300) and the entrance of coolant pump (200), by the first connecting tube (600), be connected, between the outlet of coolant pump (200) and coolant entrance (116), by the second connecting tube (400), be connected, between the entrance of coolant outlet (117) and heat exchanger (300), by the 3rd connecting tube (500), be connected.
2. the radiator structure for 2.5D/3D TSV high-power chip encapsulation as claimed in claim 1, it is characterized in that: at the left plate of micro-spray chamber body (112) and the medium position of right plate, be fixed with dividing plate (114), on dividing plate (114), offer dividing plate via hole (115), and described coolant outlet (117) is opened in the right plate of micro-spray chamber body (112) of dividing plate (114) below.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410380524.8A CN104124218A (en) | 2014-08-04 | 2014-08-04 | Heat dissipation structure for 2.5D/3DTSV high-power chip package |
| US14/703,476 US9653378B2 (en) | 2014-08-04 | 2015-05-04 | Heat dissipation solution for advanced chip packages |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410380524.8A CN104124218A (en) | 2014-08-04 | 2014-08-04 | Heat dissipation structure for 2.5D/3DTSV high-power chip package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104124218A true CN104124218A (en) | 2014-10-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410380524.8A Pending CN104124218A (en) | 2014-08-04 | 2014-08-04 | Heat dissipation structure for 2.5D/3DTSV high-power chip package |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110100308A (en) * | 2016-12-20 | 2019-08-06 | 西门子股份公司 | Bottom side has the semiconductor module of support construction |
| CN111128917A (en) * | 2019-12-30 | 2020-05-08 | 上海先方半导体有限公司 | Chip packaging structure and manufacturing method thereof |
| CN112071818A (en) * | 2020-09-02 | 2020-12-11 | 中国电子科技集团公司第十四研究所 | Phase-change micro-cooling method and device for micro-system |
| WO2024053699A1 (en) * | 2022-09-09 | 2024-03-14 | Ｎｅｃプラットフォームズ株式会社 | Electronic device and manufacturing method for electronic device |
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| CN103378026A (en) * | 2012-04-16 | 2013-10-30 | 北京大学 | Three-dimensional packaging method having heat radiation function |
| CN103681565A (en) * | 2012-09-21 | 2014-03-26 | 日月光半导体制造股份有限公司 | Semiconductor package substrates having pillars and related methods |
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2014
- 2014-08-04 CN CN201410380524.8A patent/CN104124218A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20060096743A1 (en) * | 2004-06-11 | 2006-05-11 | Foxconn Technology Co., Ltd. | Liquid cooling device |
| CN1979825A (en) * | 2005-12-02 | 2007-06-13 | 刘胜 | Micro-jet-flow water-cooling system for luminuous diode LED |
| CN2919801Y (en) * | 2006-01-20 | 2007-07-04 | 刘胜 | Micro-spraying jet cooling device for electronic device |
| CN101936495A (en) * | 2009-07-01 | 2011-01-05 | 厦门兴恒隆照明科技有限公司 | Device for actively cooling LED (light emitting diode) and recycling waste heat |
| CN103378026A (en) * | 2012-04-16 | 2013-10-30 | 北京大学 | Three-dimensional packaging method having heat radiation function |
| CN103681565A (en) * | 2012-09-21 | 2014-03-26 | 日月光半导体制造股份有限公司 | Semiconductor package substrates having pillars and related methods |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110100308A (en) * | 2016-12-20 | 2019-08-06 | 西门子股份公司 | Bottom side has the semiconductor module of support construction |
| CN110100308B (en) * | 2016-12-20 | 2020-09-22 | 西门子股份公司 | Semiconductor module with support structure on bottom side |
| CN111128917A (en) * | 2019-12-30 | 2020-05-08 | 上海先方半导体有限公司 | Chip packaging structure and manufacturing method thereof |
| CN112071818A (en) * | 2020-09-02 | 2020-12-11 | 中国电子科技集团公司第十四研究所 | Phase-change micro-cooling method and device for micro-system |
| CN112071818B (en) * | 2020-09-02 | 2022-06-10 | 中国电子科技集团公司第十四研究所 | Phase-change micro-cooling method and device for micro-system |
| WO2024053699A1 (en) * | 2022-09-09 | 2024-03-14 | Ｎｅｃプラットフォームズ株式会社 | Electronic device and manufacturing method for electronic device |
| JP7469410B2 (en) | 2022-09-09 | 2024-04-16 | Ｎｅｃプラットフォームズ株式会社 | Electronic device and method for manufacturing electronic device |
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Application publication date: 20141029 |