CN104112736A - 3D-IC with inter-layer complex microchannel fluid cooling function - Google Patents
3D-IC with inter-layer complex microchannel fluid cooling function Download PDFInfo
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Abstract
The invention discloses a 3D-IC with an inter-layer complex microchannel fluid cooling function and belongs to the technical field of 3D-IC micro-electronic heat radiation. The 3D-IC includes a sealing plate, chip layers with complex microchannels and connection layers, which are sequentially laminated and packaged together. The sealing plate is provided with a fluid entrance and a fluid exit, which are connected with external pipes. The chip layers include through holes TSFVs which connect fluids at upper and lower layers, back etching complex microchannels and front-face arrangement circuit layers or microelectronic components, and the upper layer does not need any TSEV, but other layers need TSEVs. The 3D-IC with the inter-layer complex microchannel fluid cooling function adopts the complex microchannels, compared with a micro pin fin structure, the inter-layer connection strength of a chip is strengthened and at the same time, the chip strength is also increased; the TSEVs adopt a tungsten or a tungsten copper material so that the thermal compatibility of heterogeneous materials is strengthened; and a filling material of the connection layers adopts a polyimide composite thin film doped with inorganic nano particles so that the thermal compatibility is strengthened and the thermal conductivity is increased. Therefore, defects of application restriction of heat sink of microchannels and nonuniform temperature distribution of a chip are compensated for.
Description
Technical field
The invention belongs to 3D-IC microelectronics heat dissipation technology field, relate to a kind of micro-cooling structure, the complicated microchannel that especially misplaces can be taken away the heat of chip effectively, and realizes more uniform Temperature Distribution.Adopt tungsten or tungsten copper to there is the doping inorganic nanoparticles (as: SiO of thermal conductive resin as TSEV material, use simultaneously
2, TiO
2, Al
2o
3, AlN, C etc.) polyimide composite film strengthened the matching of dissimilar materials and strengthened heat exchange as the packing material of articulamentum.
Background technology
In recent years, there is more research the aspect such as the integrated technology to 3D-IC (integrated circuit), frame design, cost analysis, temperature control, layout of roads, fail-safe analysis both at home and abroad.Along with improving constantly of the development and application demand of very lagre scale integrated circuit (VLSIC), two dimension chip can not meet its demand, have low in energy consumption, transmission range is short, transfer rate is fast, low delay, low noise, the 3D-IC of high frequency becomes the focus receiving much concern.TVS (silicon through hole) and CMOS (complementary metal oxide semiconductors (CMOS)) have realized the electrical connection of 3D-IC vertical direction, have realized 3D-IC truly.But, because increasing exponentially the power dissipation density of chip on identical area, integrated circuit stacking cause chip caloric value to increase exponentially, and the insulation dielectric layer of the interlayer low heat conductivity of connecting circuit, traditional type of cooling and micro-channel heat sink of being applied to two-dimentional chip etc. can not have been taken away the caloric value of chip effectively.Heat will cause the temperature distributing disproportionation of temperature rise, chip of chip even in the accumulative total at chip place, the serious operating state that affects chip and stability, the even defective chip due to thermal stress.Therefore, the 3D-IC heat dissipation technology of efficient stable is most important.
At present both at home and abroad to the analysis of 3D-IC thermal diffusivity mainly from two aspect researchs: (1) reasonably place function module, between balance layer, the power dissipation density of module prevents heat spot and makes circuit malfunction; (2), to chip enhanced heat exchange, the heat in chip is passed in external environment.But along with the power dissipation density of the integrated 3D-IC of height of chip sharply increases, even by rational deployment functional module, the maximum temperature of chip also can reach 150 DEG C according to mole theorem.The enhanced heat exchange of 3D-IC is mainly contained to two kinds of forms: (1) external strengthening heat-exchanger rig, as: with pasting heat sink (micro-channel heat sink) enhanced heat exchange in forced-convection heat transfer, plug-in type radiator, the back of fan; (2) 3D chip interlayer cooling, as: form heat through-hole by TVS and transmit heat between chip layer, between circuit layer, form Micro Channel Architecture by lithographic technique and carry out forced convertion the heat of taking away chip.Although there is good heat-exchange performance through the external strengthening heat-exchanger rig of optimizing, but to multiple-level stack 3D-IC, the heat that the circuit layer directly not contacting with heat-exchanger rig produces is difficult to leave, produce a lot of hot hidden danger, more seriously constantly the heat of accumulation, by the performance of grievous injury chip, even may cause chip failure.Heat through-hole has than the higher pyroconductivity of insulating dielectric layer between device layer and chip, inserts such heat through-hole and be conducive to the heat that in the chip of upper strata, device distributes and conduct downwards between chip layer.If will cause chip reliability to reduce but insert too much heat through-hole between chip; Insert in addition too much heat through-hole and must cause the minimizing of interconnection resource.Have the cooling 3D-IC of being considered to of inter-layer fluid of good heat transfer effect cooling have prospect, effective method most.
The present invention adopt complicated microchannel, tungsten or tungsten copper and doping inorganic nanoparticles polyimide composite film material, meet dissimilar materials thermal matching, strengthened 3D-IC intensity, strengthened its thermal conductivity and heat-exchange performance.The heat radiation that it is applied to high-power 3D-IC, have good thermal matching, heat radiation quickly, the advantage such as uniformity of temperature profile.
Summary of the invention
The object of the invention is to is effectively 3D-IC heat radiation, for solving the problem of thermal matching of efficiently radiates heat, chip layer temperature distribution evenness and dissimilar materials of high heat flux 3D-IC, for the operation of 3D-IC provides reliable temperature environment.
The present invention has designed a kind of cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer that has, it is characterized in that, as shown in Figure 1, comprise diaphragm seal (1) together of stacked package successively, chip layer (2.1,2.2,2.3), articulamentum (3) with complicated microchannel, on diaphragm seal (1), have the fluid intake (4), the fluid issuing (5) that are connected with exterior line, be divided into the upper strata chip layer (2.1) of complicated microchannel, bottom chip layer (2.3) with the intermediate core lamella (2.2) of complicated microchannel, band with complicated microchannel with the chip layer of complicated microchannel, the back side that definition is chip layer near the one side of diaphragm seal (1), away from one side be front, with the complicated microchannel of upper strata chip layer (2.1) back-etching (8) of complicated microchannel, positive circuit layer or the microelectronic component (6) arranged, the left and right sides, complicated microchannel (8) is provided with through hole TSFV (7), through hole TSFV (7) is connected with the complicated microchannel of upper strata chip layer (2.1), and upper strata chip layer (2.1) does not need TSEV (9), with the complicated microchannel of intermediate core lamella (2.2) back-etching (8) of complicated microchannel, positive circuit layer or the microelectronic component (6) arranged, the left and right sides, complicated microchannel (8) is provided with through hole TSFV (7), through hole TSFV (7) is connected with the complicated microchannel of intermediate core lamella (2.2), and complicated microchannel (8) rib is provided with the silicon perforation electrical connection TSEV (9) that connects levels electricity, band is with the complicated microchannel of bottom chip layer (2.3) back-etching (8) of complicated microchannel, positive circuit layer or the microelectronic component (6) arranged, the left and right sides, complicated microchannel (8) is provided with TSFV (7), TSFV (7) is connected with the complicated microchannel of bottom chip layer (2.3), complicated microchannel (8) rib is provided with the silicon perforation electrical connection TSEV (9) that connects upper strata electricity, because this chip layer is positioned at the bottom of whole 3D chip, in order to form the mobile enclosed cavity of fluid, the etching depth of the TSFV (7) of this layer of chip is identical with the degree of depth of microchannel (8), thereby form the TSFV (7) of bottom sealing.
Its right and left of articulamentum (3) is also provided with through hole TSFV (7); Articulamentum is mainly metal material, and the gap between chip and metal material above articulamentum or below adopts the polyimides of doping inorganic nanoparticles to carry out sealed insulation.Metal material articulamentum is connected the TSEV on the chip of its top and bottom with circuit or microelectronic component on chip
Above-mentioned diaphragm seal (1), with the chip layer of complicated microchannel, the position relationship of articulamentum (3) is up-down structure, be followed successively by: diaphragm seal (1), upper strata chip layer (2.1), articulamentum (3), intermediate core lamella (2.2), articulamentum (3), bottom chip layer (2.3), between bottom chip layer (2.3) and upper strata chip layer (2.1), can design as required multilayer intermediate core lamella (2.2), centre all adopts articulamentum (3) to connect, above-mentioned upper strata chip layer (2.1), intermediate core lamella (2.2), articulamentum (3), the TSFV (7) of the both sides of bottom chip layer (2.3) is corresponding superimposed respectively, form two cavitys in left and right, the complicated microchannel of upper strata chip layer (2.1), intermediate core lamella (2.2) and bottom chip layer (2.3) form in parallel and respectively with two of left and right cavity vertical connection, fluid intake (4), the fluid issuing (5) of diaphragm seal (1) are communicated with two cavitys respectively.
The machining area of complicated microchannel (7) that the present invention proposes and the density degree of TSEV can be determined according to the circuit design of chip and size.For the structure of clearer and more definite chip layer 2, Fig. 1 (c), Fig. 1 (d), Fig. 1 (e) have provided respectively front view, A-A profile, the B-B profile of chip layer (2.1); Fig. 1 (g), Fig. 1 (h), Fig. 1 (i) have provided respectively front view, C-C profile, the D-D profile of chip layer (2.2); Fig. 1 (j), Fig. 1 (k), Fig. 1 (l) have provided respectively front view, E-E profile, the F-F profile of chip layer (2.3); Fig. 1 (m) has provided the cutaway view G-G of whole chip.
As shown in Figure 2, after encapsulation, form envelope microchannel fluid-cooled 3D-IC successively by each layer of 3D-IC.In with the complicated microchannel fluid-cooled 3D-IC of interlayer, can form the fluid flow circuit of sealing, the fluid route of flowing through is: fluid intake (4), TSFV (7), complicated microchannel (8), TSFV (7), fluid issuing (5).Cooling fluid, after TSFV (7), by the labyrinth microchannel (8) that evenly spreads to each layer, will, from complicated microchannel surface and articulamentum Surface absorption heat, finally flow out from fluid issuing (5).
Complicated microchannel is by the rectangular micro-structural that contains scalloped recess or by the rectangular micro-structural that the contains triangle groove passage forming that misplaces.
The described rectangular micro-structural that contains scalloped recess refers to taking multiple parallel straight rectangular micro-structurals as basis, any is straight, and scalloped recess is all carved with in rectangular with adjacent straight rectangular parallel relative two sides, scalloped recess is recessed to straight rectangular central shaft, the height of scalloped recess flushes with straight rectangular height, the covering of the fan at scalloped recess arbitrary height place all with straight rectangular central axes, the scalloped recess dispersed layout that misplaces in straight two rectangular sides, in same side be scalloped recess and not the straight plane of etching be alternately distributed, the scalloped recess of same straight rectangular two sides is interspersed, the i.e. straight plane of the not etching of the corresponding another side of the scalloped recess of a side, form in general wave-like, the relative two sides that form microchannel between the rectangular micro-structural that two of arbitrary neighborhoods contain scalloped recess are the relative scalloped recess of scalloped recess, the relatively straight plane of etching not of straight plane of etching not.The angle of the fan-shaped correspondence of fan-shaped depression is 120 °.
The described rectangular micro-structural that contains triangle groove is identical with the rectangular micro-structural that contains scalloped recess, just scalloped recess is replaced with to triangular groove.The recessed angle to straight rectangular central shaft is isosceles right angle.
Chip layer (2) adopts silicon, TSEV (9) to adopt tungsten or the good polyimide material that mixes inorganic nanoparticles of tungsten copper, the packing material employing of articulamentum employing and the thermal conductivity of chip matched coefficients of thermal expansion; Corresponding diaphragm seal (1) is selected silicon or glass, with the material of the bonding encapsulation of chip and matched coefficients of thermal expansion.The height of passage is greater than 50 microns, and channel height is greater than the thickness of chip circuit layer.
The present invention adopts following technical scheme:
Based on the thermal convection principle that increases heat exchange area and flow disturbance, and consider to obtain interlayer structure requirement of strength and heat exchange requirement, propose to adopt labyrinth microchannel (8) (two kinds of structures that contain fan-shaped depression or triangle depression) at the main position with the cooling 3D-IC of labyrinth microchannel inter-layer fluid.The physical dimension of complicated microchannel, density degree, how many chip layer lower set of channels numbers can be according to actual conditions optimal design such as the sizes of the power of actual chips and chip.Complicated microchannel has effectively been expanded heat exchange area on the one hand and has been strengthened the disturbance of fluid in increasing interlayer structure intensity, has improved heat exchange efficiency; Under pressure drop certain condition, can greatly improve on the other hand the uniformity of the surface temperature distribution that is cooled.
Consider the requirement of intensity and the circuit design of 3D-IC, TSEV is positioned at the centre of microchannel two side ribs, and its density degree is determined according to the requirement of circuit design.Owing to adopting flip-chip packaged technology, upper strata chip does not need TSEV, and other is two-layer all TSEV.In order to form the 3D-IC of sealing, the etching depth of the TSFV of bottom chip is identical with the degree of depth of microchannel, and the TSFV of other layer of chip all forms through hole (being that etching depth is identical with the thickness of chip layer).The end face in region, complicated microchannel of misplacing flush with chip back surrounding be complicated microchannel in chip back etching, the region of etching (chip back surrounding and rib) highly do not remain unchanged and identically do not change.
Consider with the cooling 3D-IC encapsulation and integration of the complicated microchannel fluid of interlayer, with the import and export design of the complicated microchannel fluid-cooled 3D-IC of interlayer, at diaphragm seal (1), upper flow direction in passage is vertical with fluid.With respect to the import and export of fluid levels direction, the 3D-IC that fluid vertical direction is imported and exported is simple and convenient with being connected of circuit board, can, according to the each flow with the cooling 3D-IC of the complicated microchannel fluid of interlayer of the heat dissipation capacity control of different 3D-IC, each 3D chip temperature on 3D-IC circuit board be evenly distributed.Be conducive to the uniform distribution of fluid at 3D-IC interlayer simultaneously.The employing flip chip technology of chip package.
Heat-exchange working medium can be selected respectively water, cold-producing medium etc.According to working medium used and device optimum working temperature scope, on heating surface, realize cooling technology requirement by forming fluid by single-phase convection heat exchange or the phase-change heat-exchange of the complicated microchannel that misplaces.
Can select tungsten or tungsten copper, packing material to adopt the polyimides of filling doping inorganic nanoparticles with the TSEV of the cooling 3D-IC of the complicated microchannel fluid of interlayer, strengthen thermal matching and the thermal conductivity of heterogeneous 3D-IC.Global geometric shape size can be according to being required to determine by the size of chip layer and overall encapsulation.
The present invention has following advantages and effect:
1, vertical fluid entrance, convenient installation, integrated, fluid well-distributing distribution;
2, complicated microchannel effectively increases heat exchange area and has strengthened the disturbance of fluid, effectively heat exchange greatly improve the uniformity of the surface temperature distribution that is cooled;
3,, than rectangular channel structure, under same pressure drop, heat transfer effect increases greatly;
4, than micropin rib structure, increased intensity that 3D-IC interlayer connects and also increased the intensity of passage simultaneously, the vortex of having eliminated pin rib afterbody, improved chip layer temperature uniformity, reduced pressure drop.
Brief description of the drawings
Fig. 1: the structural representation of the cooling 3D-IC of the complicated microchannel fluid of interlayer of the present invention;
In figure: 1, diaphragm seal, 2.1, chip layer, 2.2, intermediate core lamella, 2.3 bottom chip layer, 3, articulamentum, 4, fluid intake, 5, fluid issuing, 6, circuit layer (microelectronic component), 7, TSFV (silicon perforation fluid connects), 8, complicated microchannel, 9, TSEV (silicon perforation electrical connection).
Fig. 1 (a): the present invention is with the vertical view of fluid inlet and outlet diaphragm seal;
Fig. 1 (b): chip layer vertical view of the present invention;
Fig. 1 (c): the present invention has the upper strata chip front view of dislocation triangle depression microchannel;
Fig. 1 (d): the present invention has the upper strata chip A-A profile of dislocation triangle depression microchannel;
Fig. 1 (e): the present invention has the upper strata chip B-B profile of dislocation triangle depression microchannel;
Fig. 1 (f): the vertical view of articulamentum of the present invention;
Fig. 1 (g): the present invention has the intermediate layer chip front view of dislocation triangle depression microchannel;
Fig. 1 (h): the present invention has the intermediate layer chip C-C profile of dislocation triangle depression microchannel;
Fig. 1 (i): the present invention has the intermediate layer chip D-D profile of dislocation triangle depression microchannel;
Fig. 1 (j): the present invention has the bottom chip front view of dislocation triangle depression microchannel;
Fig. 1 (k): the present invention has the bottom chip E-E profile of dislocation triangle depression microchannel;
Fig. 1 (l): the present invention has the bottom chip F-F profile of dislocation triangle depression microchannel;
Fig. 2: there is the present invention of structure shown in Fig. 1 with the cooling 3D-IC overall structure of the complicated microchannel fluid of interlayer schematic diagram;
In figure: 1, diaphragm seal, 2, chip, 3, articulamentum;
Fig. 3: the present invention is with the misplace overall structure schematic diagram of the cooling 3D-IC of fan-shaped depression microchannel fluid of interlayer;
In figure: 1, diaphragm seal, 2.1, chip layer, 2.2, intermediate core lamella, 2.3 bottom chip layer, 3, articulamentum;
Fig. 4: the structural representation of the fan-shaped depression of dislocation of the present invention microchannel
Fig. 5: the overall structure schematic diagram with the cooling 3D-IC of interlayer dislocation triangle depression microchannel fluid of the present invention;
In figure: 1, diaphragm seal, 2, chip, 3, articulamentum;
Fig. 6: the structural representation of dislocation triangle depression of the present invention microchannel;
Fig. 7: the present invention has dislocation triangle depression microchannel fluid-cooled 3D-ICM-M profile.
Embodiment
Below in conjunction with embodiment the present invention will be further described book, but the present invention is not limited to following examples.
Embodiment 1
The application that has dislocation the cooling 3D-IC of fan-shaped depression microchannel inter-layer fluid below in conjunction with accompanying drawing and band is described further the present invention:
Have low in energy consumption, transmission range is short, transfer rate is fast, low delay, low noise, the 3D-IC of high frequency becomes the focus receiving much concern.But, because increasing exponentially the power dissipation density of chip on identical area, integrated circuit stacking cause chip caloric value to increase exponentially, and the insulation dielectric layer of the interlayer low heat conductivity of connecting circuit, the heat radiation of 3D-IC becomes the key issue that limits its development.With complicated microchannel, the cooling 3D-IC of inter-layer fluid becomes its effective heat dissipation technology.Band has dislocation the cooling 3D-IC of fan-shaped depression microchannel inter-layer fluid and is made up of with TSEV (silicon perforation electrical connection) and chip layer (2), the articulamentum (3) of complicated microchannel diaphragm seal (1), multilayer.Chip and diaphragm seal all adopt silicon, and articulamentum adopts the polyimides of scolder and packing material doping inorganic nanoparticles, and working medium is deionized water.
Processing and size with TSEV with the high-power sandwich layer of dislocation fan-shaped depression microchannel: first, at the silica-based upper surface center processing 8mm*8mm IC (integrated circuit) of 13mm*11mm*0.25mm, reserve machining area to TSEV simultaneously.Then after adopting, through hole technology (BEOL makes through hole after all circuit, device technology again) etching through hole on silica-based forms TSV, TSFV, forms overleaf dislocation fan-shaped depression microchannel.Then form insulating barrier, transition zone and tungsten wire at through hole (TSV) in the upper and lower both sides of chip successively by chemical vapour deposition (CVD) (CVD), finally form the TSEV that diameter is 5 μ m.TSFV is the rectangular area of 1.5mm*8mm, and it is positioned at both sides and the chip IC joint area of chip.
The height of fan-shaped depression microchannel of misplacing is 200 μ m, and spacing is 200 μ m.As shown in Figure 4, the unit that the length that the circular arc that the fan-shaped depression microchannel rib structure that misplaces is is 0.1mm by sidewall by 120 degree radiuses and straight line form is 0.25mm forms the enlarged drawing of single passage successively, and two sidewalls of adjacent microchannel rib structure misplace successively.It is 200 μ m (spacing of the position that two fan-shaped depression end faces are relative) that its passage locating in the middle of two fan-shaped depressions form maximum spacing, is 100 μ m (two not the spacing of the relative position of the straight plane of etching) two straight line middles formation minimum spacings.
Chip layer is connected with articulamentum: layers of chips is connected by articulamentum successively, articulamentum be made up of the polyimides that welds brazing metal that the TSEV of lower floor's chip is connected with upper strata chip (IC) circuit and packing material doping inorganic nanoparticles that (be that articulamentum is mainly metal material, the gap between chip and metal material above articulamentum or below adopts the polyimides of the inorganic nanoparticles that adulterates to carry out sealed insulation.Metal material articulamentum is connected the TSEV on the chip of its top and bottom with circuit or microelectronic component on chip).
Diaphragm seal processing and structure: on silica-based, form fluid intake 4, fluid issuing 5 by lithographic technique.The manhole that fluid intake 4, fluid issuing 5 are 1.5mm for diameter is corresponding with the TSFV center of chip respectively, all.
Finally the cavity band of the chip layer having connected and diaphragm seal bonding formation sealing is had dislocation to the cooling 3D-IC of fan-shaped depression microchannel inter-layer fluid.Deionized water flow through successively fluid intake 4, TSFV7, complicated microchannel 8, TSFV7, fluid issuing 5.Cooling fluid, after TSFV7, by fan-shaped the dislocation that evenly spreads to each layer of chip layer depression microchannel 8, will, from fan-shaped depression microchannel surface and the articulamentum Surface absorption heat of misplacing, finally flow out from fluid issuing 5.Realize the heat radiation of high heat flux 3D-IC, ensure the life-span that the temperature of electronic device operation and the uniformity of temperature strengthen radiating element.
Be 600w/cm in the density of heat flow rate of 3D-IC
2when the mass flow of the porch of (density of heat flow rate that is every layer of chip is 200w/cm2), fluid is identical, compared with conventional microchannel, the maximum temperature difference of its radiating surface can reduce 7 ° to reduce 9.5 °, radiating surface mean temperature.
Be 600w/cm in the density of heat flow rate of 3D-IC
2when the pressure drop of the import and export of (density of heat flow rate that is every layer of chip is 200w/cm2), fluid identical (be consumed energy identical), compared with conventional microchannel, the maximum temperature difference of its radiating surface can reduce 6.1 ° to reduce 7.3 °, radiating surface mean temperature.
If adopting micro-channel heat sink is the heat radiation that cannot meet the 3D-IC of so large density of heat flow rate, the temperature of its circuit layer can reach 160 DEG C.Chip temperature rises 1 °, and the life-span of chip will reduce 5%, and therefore the present invention has had good thermal diffusivity with the complicated microchannel fluid-cooled 3D-IC of interlayer, and 3D-IC is significant.So the present invention realizes the heat radiation of high heat flux 3D-IC, ensure the life-span that the temperature of chip operation and the uniformity of temperature strengthen radiating element.
Embodiment 2
The application that has dislocation liquid layer mesosome cooling 3D-IC in microchannel, triangular fovea cave below in conjunction with accompanying drawing and band is described further the present invention:
Have low in energy consumption, transmission range is short, transfer rate is fast, low delay, low noise, the 3D-IC of high frequency becomes the focus receiving much concern.But, because increasing exponentially the power dissipation density of chip on identical area, integrated circuit stacking cause chip caloric value to increase exponentially, and the insulation dielectric layer of the interlayer low heat conductivity of connecting circuit, the heat radiation of 3D-IC becomes the key issue that limits its development.With complicated microchannel, the cooling 3D-IC of inter-layer fluid becomes its effective heat dissipation technology.Band has dislocation the cooling 3D-IC of microchannel, triangular fovea cave inter-layer fluid and is made up of with TSEV (silicon perforation electrical connection) and chip layer (2.1-2.3), the articulamentum (3) of dislocation triangle depression microchannel diaphragm seal (1), multilayer.Chip and diaphragm seal all adopt silicon, and articulamentum adopts the polyimides of scolder and packing material doping inorganic nanoparticles, and working medium is deionized water.
Processing and size with TSEV with the high-power sandwich layer of dislocation triangle depression microchannel: first, at the silica-based upper surface center processing 8mm*8mm IC (integrated circuit) of 13mm*11mm*0.25mm, reserve machining area to TSEV simultaneously.Then after adopting, through hole technology (BEOL makes through hole after all circuit, device technology again) etching through hole on silica-based forms TSV, TSFV, forms overleaf dislocation triangle depression microchannel.Then form insulating barrier, transition zone and tungsten wire at through hole (TSV) in the upper and lower both sides of chip successively by chemical vapour deposition (CVD) (CVD), finally forming diameter is 5 μ mTSEV.TSFV is the rectangular area of 1.5mm*8mm, and it is positioned at both sides and the chip IC joint area of chip.
The height of dislocation triangle depression microchannel is 200 μ m, and spacing is 200 μ m.The enlarged drawing of single passage as shown in Figure 6, dislocation triangle depression microchannel rib structure be two right-angle sides of the sidewall isosceles right triangle that is 0.1mm by right-angle side become length with linear be that the unit of 0.2mm forms successively, two sidewalls misconstruction successively of rib structure.The minimum widith of dislocation triangle depression microchannel rib is 50 μ m.It is 200 μ m that dislocation triangle depression microchannel forms maximum spacing two triangle depression middles, and forming minimum spacing two straight line middles is 100 μ m.
Chip layer is connected with articulamentum: layers of chips is connected by articulamentum successively, and articulamentum is made up of the polyimides that welds scolder that the TSEV of lower floor's chip is connected with upper strata chip (IC) circuit and packing material doping inorganic nanoparticles.
Diaphragm seal processing and structure: on silica-based, form fluid intake 4, fluid issuing 5 by lithographic technique.The manhole that fluid intake 4, fluid issuing 5 are 1.5mm for diameter is corresponding with the TSFV center of chip respectively.
Finally the cavity band of the chip layer having connected and diaphragm seal bonding formation sealing is had dislocation to the cooling 3D-IC of microchannel, triangular fovea cave inter-layer fluid.Deionized water flow through successively fluid intake 4, TSFV7, complicated microchannel 8, TSFV7, fluid issuing 5.Cooling fluid, after TSFV7, by fan-shaped the dislocation that evenly spreads to each layer of chip layer depression microchannel 8, will, from dislocation triangle depression microchannel surface and articulamentum Surface absorption heat, finally flow out from fluid issuing 5.Realize the heat radiation of high heat flux 3D-IC, ensure the life-span that the temperature of electronic device operation and the uniformity of temperature strengthen radiating element.
Be 630w/cm in the density of heat flow rate of 3D-IC
2(density of heat flow rate that is every layer of chip is 210w/cm
2), the mass flow of the porch of fluid is when identical, compared with conventional microchannel, the maximum temperature difference of its radiating surface can reduce 8 ° to reduce 10 °, radiating surface mean temperature.
Be 630w/cm in the density of heat flow rate of 3D-IC
2(density of heat flow rate that is every layer of chip is 210w/cm
2), when the pressure drop of the import and export of fluid identical (be consumed energy identical), compared with conventional microchannel, the maximum temperature difference of its radiating surface can reduce 6.6 ° to reduce 7.9 °, radiating surface mean temperature.
If adopting micro-channel heat sink is the heat radiation that cannot meet the 3D-IC of so large density of heat flow rate, the temperature of its circuit layer can reach 160 DEG C.Chip temperature rises 1 °, and the life-span of chip will reduce 5%, and therefore the present invention has had good thermal diffusivity with the complicated microchannel of interlayer fluid-cooled, and the heat radiation of 3D-IC is significant.So the present invention realizes the heat radiation of high heat flux 3D-IC, ensure the life-span that the temperature of chip operation and the uniformity of temperature strengthen radiating element.
Claims (9)
1. there is the cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer, it is characterized in that, comprise stacked package diaphragm seal (1), the chip layer with complicated microchannel, articulamentum (3) together successively; On diaphragm seal (1), have the fluid intake (4), the fluid issuing (5) that are connected with exterior line; Be divided into the upper strata chip layer (2.1) of complicated microchannel, bottom chip layer (2.3) with the intermediate core lamella (2.2) of complicated microchannel, band with complicated microchannel with the chip layer of complicated microchannel; The back side that definition is chip layer near the one side of diaphragm seal (1), away from one side be front; With the complicated microchannel of upper strata chip layer (2.1) back-etching (8) of complicated microchannel, positive circuit layer or the microelectronic component (6) arranged, the left and right sides, complicated microchannel (8) is provided with through hole TSFV (7), through hole TSFV (7) is connected with the complicated microchannel of upper strata chip layer (2.1), and upper strata chip layer (2.1) does not need TSEV (9); With the complicated microchannel of intermediate core lamella (2.2) back-etching (8) of complicated microchannel, positive circuit layer or the microelectronic component (6) arranged, the left and right sides, complicated microchannel (8) is provided with through hole TSFV (7), through hole TSFV (7) is connected with the complicated microchannel of intermediate core lamella (2.2), and complicated microchannel (8) rib is provided with the silicon perforation electrical connection TSEV (9) that connects levels electricity; With the complicated microchannel of bottom chip layer (2.3) back-etching (8) of complicated microchannel, positive circuit layer or the microelectronic component (6) arranged, the left and right sides, complicated microchannel (8) is provided with TSFV (7), TSFV (7) is connected with the complicated microchannel of bottom chip layer (2.3), complicated microchannel (8) rib is provided with the silicon perforation electrical connection TSEV (9) that connects upper strata electricity, the etching depth of the TSFV (7) of this layer of chip is identical with the degree of depth of microchannel (8), thereby forms the TSFV (7) of bottom sealing; Articulamentum (3);
Above-mentioned diaphragm seal (1), with the chip layer of complicated microchannel, the position relationship of articulamentum (3) is up-down structure, be followed successively by: diaphragm seal (1), upper strata chip layer (2.1), articulamentum (3), intermediate core lamella (2.2), articulamentum (3), bottom chip layer (2.3), between bottom chip layer (2.3) and upper strata chip layer (2.1), can design as required multilayer intermediate core lamella (2.2), centre all adopts articulamentum (3) to connect, above-mentioned upper strata chip layer (2.1), intermediate core lamella (2.2), articulamentum (3), the TSFV (7) of the both sides of bottom chip layer (2.3) is corresponding superimposed respectively, form two cavitys in left and right, the complicated microchannel of upper strata chip layer (2.1), intermediate core lamella (2.2) and bottom chip layer (2.3) form in parallel and respectively with two of left and right cavity vertical connection, fluid intake (4), the fluid issuing (5) of diaphragm seal (1) are communicated with two cavitys respectively.
2. there is the cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer according to claim 1 a kind of, it is characterized in that, in with the complicated microchannel fluid-cooled 3D-IC of interlayer, form the fluid flow circuit of sealing, the fluid route of flowing through is: fluid intake (4), TSFV (7), complicated microchannel (8), TSFV (7), fluid issuing (5); Cooling fluid, after TSFV (7), by the labyrinth microchannel (8) that evenly spreads to each layer, will, from complicated microchannel surface and articulamentum Surface absorption heat, finally flow out from fluid issuing (5).
3. have the cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer according to claim 1 a kind of, it is characterized in that, complicated microchannel is by the rectangular micro-structural that contains scalloped recess or by the rectangular micro-structural that the contains triangle groove passage forming that misplaces;
The described rectangular micro-structural that contains scalloped recess refers to taking multiple parallel straight rectangular micro-structurals as basis, any is straight, and scalloped recess is all carved with in rectangular with adjacent straight rectangular parallel relative two sides, scalloped recess is recessed to straight rectangular central shaft, the height of scalloped recess flushes with straight rectangular height, the covering of the fan at scalloped recess arbitrary height place all with straight rectangular central axes, the scalloped recess dispersed layout that misplaces in straight two rectangular sides, in same side be scalloped recess and not the straight plane of etching be alternately distributed, the scalloped recess of same straight rectangular two sides is interspersed, the i.e. straight plane of the not etching of the corresponding another side of the scalloped recess of a side, form in general wave-like, the relative two sides that form microchannel between the rectangular micro-structural that two of arbitrary neighborhoods contain scalloped recess are the relative scalloped recess of scalloped recess, the relatively straight plane of etching not of straight plane of etching not,
The described rectangular micro-structural that contains triangle groove is identical with the rectangular micro-structural that contains scalloped recess, just scalloped recess is replaced with to triangular groove.
4. have the cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer according to claim 3 a kind of, it is characterized in that, the angle of the fan-shaped correspondence of fan-shaped depression is 120 °; The recessed angle to straight rectangular central shaft of triangular groove is isosceles right angle.
5. there is the cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer according to claim 1 a kind of, it is characterized in that, the packing material that chip layer (2) adopts silicon, TSEV (9) employing tungsten or tungsten copper, articulamentum to adopt adopts the polyimide material of the doping inorganic nanoparticles good with the thermal conductivity of chip matched coefficients of thermal expansion; Corresponding diaphragm seal (1) is selected silicon or glass.
6. have the cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer according to claim 1 a kind of, it is characterized in that, the height of passage is greater than 50 microns, and channel height is greater than the thickness of chip circuit layer.
7. have the cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer according to claim 1 a kind of, it is characterized in that, heat-exchange working medium is selected water or cold-producing medium.
8. have the cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer according to claim 1 a kind of, it is characterized in that, fluid can form single-phase heat exchange or boiling phase-change heat-exchange in complicated microchannel.
9. there is the cooling 3D-IC of the complicated microchannel fluid forced convertion of interlayer according to claim 1 a kind of, it is characterized in that, articulamentum is mainly metal material, and the gap between chip and metal material above articulamentum or below adopts the polyimides of doping inorganic nanoparticles to carry out sealed insulation; Metal material articulamentum is connected the TSEV on the chip below it with circuit or microelectronic component on chip above.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105865089A (en) * | 2016-04-19 | 2016-08-17 | 华北电力大学 | Pin-fin wall surface micro-channel heat exchanger |
| CN107285268A (en) * | 2016-04-13 | 2017-10-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Fluid channel heat radiation chip and preparation method thereof |
| CN109560050A (en) * | 2018-10-31 | 2019-04-02 | 西安理工大学 | A kind of three dimensional integrated circuits cooling system |
| CN110736823A (en) * | 2019-10-24 | 2020-01-31 | 常州大学 | micro-nano micro-fluidic preconcentrator device for oil gas leakage detection |
| CN114047673A (en) * | 2021-12-02 | 2022-02-15 | 浙江大学 | Temperature control device for isolating internal fluctuation and decoupling control method thereof |
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2014
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| THOMAS BRUNSCHWILER, ET. AL: "Forced convective interlayer cooling in vertically integrated packages", 《INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107285268A (en) * | 2016-04-13 | 2017-10-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Fluid channel heat radiation chip and preparation method thereof |
| CN107285268B (en) * | 2016-04-13 | 2019-08-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Fluid channel heat radiation chip and preparation method thereof |
| CN105865089A (en) * | 2016-04-19 | 2016-08-17 | 华北电力大学 | Pin-fin wall surface micro-channel heat exchanger |
| CN105865089B (en) * | 2016-04-19 | 2018-05-25 | 华北电力大学 | A kind of pin rib wall surface micro-channel heat exchanger |
| CN109560050A (en) * | 2018-10-31 | 2019-04-02 | 西安理工大学 | A kind of three dimensional integrated circuits cooling system |
| CN110736823A (en) * | 2019-10-24 | 2020-01-31 | 常州大学 | micro-nano micro-fluidic preconcentrator device for oil gas leakage detection |
| CN114047673A (en) * | 2021-12-02 | 2022-02-15 | 浙江大学 | Temperature control device for isolating internal fluctuation and decoupling control method thereof |
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| CN104112736B (en) | 2017-09-08 |
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