CN104112725B - Radiator structure for high-power chip BGA package - Google Patents

Radiator structure for high-power chip BGA package Download PDF

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Publication number
CN104112725B
CN104112725B CN201410380772.2A CN201410380772A CN104112725B CN 104112725 B CN104112725 B CN 104112725B CN 201410380772 A CN201410380772 A CN 201410380772A CN 104112725 B CN104112725 B CN 104112725B
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China
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micro
spray chamber
chamber body
cooling medium
power chip
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CN201410380772.2A
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CN104112725A (en
Inventor
侯峰泽
林挺宇
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National Center for Advanced Packaging Co Ltd
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National Center for Advanced Packaging Co Ltd
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Application filed by National Center for Advanced Packaging Co Ltd filed Critical National Center for Advanced Packaging Co Ltd
Priority to CN201410380772.2A priority Critical patent/CN104112725B/en
Publication of CN104112725A publication Critical patent/CN104112725A/en
Priority to US14/703,476 priority patent/US9653378B2/en
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Publication of CN104112725B publication Critical patent/CN104112725B/en
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Abstract

The present invention relates to a kind of radiator structure for high-power chip BGA package, upper surface at printed substrate is welded with support ball, it is provided with organic substrate on ball supporting, upper surface at machine substrate is provided with mould plastic-sealed body and micro-spray chamber body, cooling medium entrance is offered in the middle part of the lower surface of micro-spray chamber body, cooling medium outlet is offered in the lower surface both sides of micro-spray chamber body, upper surface at micro-spray chamber body is provided with heat conduction thin film, upper surface at the printed substrate supporting ball side is provided with cooling pump and heat exchanger, it is connected pipeline by first between entrance and the outlet of heat exchanger of cooling pump to be connected, cooling delivery side of pump is connected pipeline with cooling medium entrance by second and is connected, it is connected pipeline by the 3rd between cooling medium outlet and the entrance of heat exchanger to be connected.The present invention contributes to outside the heat conduction extremely encapsulation produced by chip as early as possible, thus improves the heat-sinking capability of high-power chip BGA package.

Description

Radiator structure for high-power chip BGA package
Technical field
The present invention relates to a kind of chip-packaging structure, present invention relates especially to a kind of for high-power chip BGA(Ball Grid Array, BGA) radiator structure that encapsulates.
Background technology
High-power chip, especially power density reach 350W/cm2Above chip, and Hotspot(focus) reach 10KW/cm2Above chip, if using BGA package, the heat that chip produces is difficult to conduct in encapsulation.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of heat conduction contributing to being produced by chip as early as possible to encapsulation is outer thus improves the radiator structure being used for high-power chip BGA package of the heat-sinking capability of high-power chip BGA package.
nullThe technical scheme provided according to the present invention,The described radiator structure for high-power chip BGA package,Upper surface at printed substrate is welded with support ball,It is provided with organic substrate on ball supporting,Upper surface at machine substrate is provided with mould plastic-sealed body and micro-spray chamber body,Micro-spray chamber body is positioned at inside the lower end of mould plastic-sealed body,Lower cavity plate medium position at micro-spray chamber body offers cooling medium entrance,Cooling medium outlet is offered at the both ends, lower cavity plate left and right of micro-spray chamber body,Cavity plate upper surface at micro-spray chamber body is provided with heat conduction thin film,Upper surface at the printed substrate supporting ball side is provided with cooling pump and heat exchanger,It is connected pipeline by first between entrance and the outlet of heat exchanger of cooling pump to be connected,Cooling delivery side of pump is connected pipeline with cooling medium entrance by second and is connected,It is connected pipeline by the 3rd between cooling medium outlet and the entrance of heat exchanger to be connected,3rd stage casing connecting pipeline is erected at the top of mould plastic-sealed body.
Described heat conduction thin film is Diamond Films With High Thermal Conductivity.
In micro-spray chamber body, it is provided with horizontal micro-spray chamber body dividing plate, micro-spray chamber body dividing plate offers dividing plate via.
Described second connection pipeline and the 3rd connects pipeline and gets around support ball.
The present invention uses active heat removal mode, i.e. micro jet flow heat dissipation technology is applied to BGA package level, there is one layer of Diamond Films With High Thermal Conductivity below high-power chip, contribute to outside the heat conduction extremely encapsulation as early as possible chip produced, thus improve the heat-sinking capability of high-power chip BGA package.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the enlarged drawing of the present invention micro-spray chamber body.
Fig. 3 is the A A sectional view of Fig. 2.
Detailed description of the invention
Below in conjunction with specific embodiment, the invention will be further described.
nullThis is used for the radiator structure of high-power chip BGA package,Upper surface at printed substrate 400 is welded with support ball 102,It is provided with organic substrate 101 on ball 102 supporting,Upper surface at machine substrate 101 is provided with mould plastic-sealed body 107 and micro-spray chamber body 106,Micro-spray chamber body 106 is positioned at inside the lower end of mould plastic-sealed body 107,Lower cavity plate medium position at micro-spray chamber body 106 offers cooling medium entrance 110,Cooling medium outlet 111 is offered at the both ends, lower cavity plate left and right of micro-spray chamber body 106,Cavity plate upper surface at micro-spray chamber body 106 is provided with heat conduction thin film 105,Upper surface at the printed substrate 400 supporting ball 102 side is provided with cooling pump 200 and heat exchanger 300,It is connected pipeline 600 by first between the entrance of cooling pump 200 and the outlet of heat exchanger 300 to be connected,The outlet of cooling pump 200 is connected pipeline 500 with cooling medium entrance 110 by second and is connected,It is connected pipeline 700 by the 3rd between cooling medium outlet 111 and the entrance of heat exchanger 300 to be connected,3rd stage casing connecting pipeline 700 is erected at the top of mould plastic-sealed body 107.
Described heat conduction thin film 105 is Diamond Films With High Thermal Conductivity.
In micro-spray chamber body 106, it is provided with horizontal micro-spray chamber body dividing plate 108, micro-spray chamber body dividing plate 108 offers dividing plate via 109.
Described second connection pipeline 500 is connected pipeline 700 and gets around support ball 102 with the 3rd.
During use, the upper surface at heat conduction thin film 105 is provided with high-power chip 104, and the lead-in wire 103 of high-power chip 104 is bonded on organic substrate 101,
In the present invention, organic substrate 101, support ball 102, lead-in wire 103, high-power chip 104, heat conduction thin film 105, micro-spray chamber body 106, mould plastic-sealed body 107, micro-spray chamber body dividing plate 108, dividing plate via 109, cooling medium entrance 110 are referred to as BGA package 100 with cooling medium outlet 111.
nullHigh-power chip 104 is bonded on organic substrate 101 by lead-in wire 103,Heat conduction thin film 105 is at high-power chip 104 lower surface,Micro-spray cooling medium uses deionized water or liquid metal,By cooling pump 200 pressurised driving,Make deionized water or liquid metal flow through cooling medium entrance 110 to enter in micro-spray chamber body 106,During in order to make high-power chip 104 work,Uniformity of temperature profile,Avoid local that focus occurs,Micro-spray chamber body 106 includes a micro-spray chamber body dividing plate 108,Several dividing plate vias 109 are had on dividing plate,Deionized water or liquid metal are through via,Uniformly it is sprayed onto cavity upper surface,Absorb the heat that high-power chip 104 produces,Ionized water or liquid metal are heated after cooling,It is back to heat exchanger 300 from both sides cooling medium outlet 111,Heat convection is carried out by heat exchanger 300 and surrounding air,Complete a circulation.
The present invention is a kind of to be made by heat conduction thin film 105(employing Diamond Films With High Thermal Conductivity) and micro jet flow heat dissipation technology be applied to the active heat removal technology of BGA package.
The manufacturing process of the present invention is as follows:
Make organic substrate 101, and on organic substrate 101, make three vias;
Making micro-spray chamber body 106, the partial enlarged drawing of micro-spray chamber body 106, as in figure 2 it is shown, micro-spray chamber body 106 includes a micro-spray chamber body dividing plate 108, micro-spray chamber body dividing plate 108 has several dividing plate vias 109;
One layer of heat conduction thin film 105 being made up of the diamond thin of high heat conduction is pasted at micro-spray chamber body 106 upper surface;
High-power chip 104 Surface Mount is on heat conduction thin film 105, and lead-in wire 103 is bonded on organic substrate 101;
Embedding packaging EMC material forms mould plastic-sealed body 107, heat-pressure curing, and mould plastic-sealed body 107 plays the effect of protection bonding wire 103;
Brush scaling powder on the pad at organic substrate 101 back side, steel mesh is planted support ball 102, backflow, is formed BGA package;
BGA package, cooling pump 200 and heat exchanger 300 are assembled on same pcb board;
The second connection pipeline 500 is used the cooling medium entrance 110 of micro-spray chamber body 106 in BGA package 100 and the outlet of cooling pump 200 to be coupled together;The 3rd connection pipeline 700 is used two cooling medium outlets 111 of the micro-spray chamber body 106 in BGA package 100 and the entrance of heat exchanger 300 to be coupled together;The first connection pipeline 600 is used the outlet of heat exchanger 300 and the entrance of cooling pump 200 to be coupled together.
Wherein the second connection pipeline 500 and the 3rd connection pipeline 700 get around support ball 102.
Second connection pipeline 500 of described connection cooling medium entrance 110 and cooling pump 200 outlet is through a via of organic substrate 101;
3rd connection pipeline 700 of described connection cooling medium outlet 111 and heat exchanger 300 outlet is through a via of organic substrate 101.

Claims (4)

  1. null1. the radiator structure for high-power chip BGA package,Upper surface at printed substrate (400) is welded with support ball (102),It is provided with organic substrate (101) on ball (102) supporting,Upper surface at organic substrate (101) is provided with mould plastic-sealed body (107) and micro-spray chamber body (106),Micro-spray chamber body (106) is positioned at inside the lower end of mould plastic-sealed body (107),Lower cavity plate medium position micro-spray chamber body (106) offers cooling medium entrance (110),Cooling medium outlet (111) is offered at the both ends, lower cavity plate left and right of micro-spray chamber body (106),Cavity plate upper surface micro-spray chamber body (106) is provided with heat conduction thin film (105),It is characterized in that: the upper surface at the printed substrate (400) supporting ball (102) side is provided with cooling pump (200) and heat exchanger (300),It is connected pipeline (600) by first between entrance and the outlet of heat exchanger (300) of cooling pump (200) to be connected,The outlet of cooling pump (200) is connected pipeline (500) with cooling medium entrance (110) by second and is connected,It is connected pipeline (700) by the 3rd between cooling medium outlet (111) and the entrance of heat exchanger (300) to be connected,3rd stage casing connecting pipeline (700) is erected at the top of mould plastic-sealed body (107).
  2. 2. the radiator structure for high-power chip BGA package as claimed in claim 1, is characterized in that: described heat conduction thin film (105) is Diamond Films With High Thermal Conductivity.
  3. 3. the radiator structure for high-power chip BGA package as claimed in claim 1, is characterized in that: be provided with horizontal micro-spray chamber body dividing plate (108) in micro-spray chamber body (106), offer dividing plate via (109) on micro-spray chamber body dividing plate (108).
  4. 4. the radiator structure for high-power chip BGA package as claimed in claim 1, is characterized in that: described second connection pipeline (500) is connected pipeline (700) and gets around support ball (102) with the 3rd.
CN201410380772.2A 2014-08-04 2014-08-04 Radiator structure for high-power chip BGA package Active CN104112725B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201410380772.2A CN104112725B (en) 2014-08-04 Radiator structure for high-power chip BGA package
US14/703,476 US9653378B2 (en) 2014-08-04 2015-05-04 Heat dissipation solution for advanced chip packages

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410380772.2A CN104112725B (en) 2014-08-04 Radiator structure for high-power chip BGA package

Publications (2)

Publication Number Publication Date
CN104112725A CN104112725A (en) 2014-10-22
CN104112725B true CN104112725B (en) 2017-01-04

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1337741A (en) * 2000-08-09 2002-02-27 株式会社Kostat半导体 Semiconductor with injectable conductive area and mfg. method thereof
CN1471159A (en) * 2003-07-11 2004-01-28 北京工业大学 Microjet array cooling heat sink
CN1979825A (en) * 2005-12-02 2007-06-13 刘胜 Micro-jet-flow water-cooling system for luminuous diode LED
CN101005745A (en) * 2006-01-20 2007-07-25 刘胜 Micro jet flow cooling system for electronic device
DE102009010257A1 (en) * 2009-02-24 2010-08-26 Jungheinrich Aktiengesellschaft Power splitter for a motor control in an industrial truck, comprises a printed circuit board, whose substrate consists of metal or other good heat conducting material or good heat conducting lower layer, and a cooling body
CN101936495A (en) * 2009-07-01 2011-01-05 厦门兴恒隆照明科技有限公司 Device for actively cooling LED (light emitting diode) and recycling waste heat
TW201128154A (en) * 2010-02-12 2011-08-16 Micro Base Technology Corp Cooling and heat-dissipation system, and cooling device thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1337741A (en) * 2000-08-09 2002-02-27 株式会社Kostat半导体 Semiconductor with injectable conductive area and mfg. method thereof
CN1471159A (en) * 2003-07-11 2004-01-28 北京工业大学 Microjet array cooling heat sink
CN1979825A (en) * 2005-12-02 2007-06-13 刘胜 Micro-jet-flow water-cooling system for luminuous diode LED
CN101005745A (en) * 2006-01-20 2007-07-25 刘胜 Micro jet flow cooling system for electronic device
DE102009010257A1 (en) * 2009-02-24 2010-08-26 Jungheinrich Aktiengesellschaft Power splitter for a motor control in an industrial truck, comprises a printed circuit board, whose substrate consists of metal or other good heat conducting material or good heat conducting lower layer, and a cooling body
CN101936495A (en) * 2009-07-01 2011-01-05 厦门兴恒隆照明科技有限公司 Device for actively cooling LED (light emitting diode) and recycling waste heat
TW201128154A (en) * 2010-02-12 2011-08-16 Micro Base Technology Corp Cooling and heat-dissipation system, and cooling device thereof

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