CN104078374B - The wire pad intensifying method of semiconductor device - Google Patents

The wire pad intensifying method of semiconductor device Download PDF

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Publication number
CN104078374B
CN104078374B CN201410308014.XA CN201410308014A CN104078374B CN 104078374 B CN104078374 B CN 104078374B CN 201410308014 A CN201410308014 A CN 201410308014A CN 104078374 B CN104078374 B CN 104078374B
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China
Prior art keywords
wire
fastener
pad
lead
framework lead
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CN104078374A (en
Inventor
缪小勇
石海忠
陆蓉
郇林香
张希娟
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Tongfu Microelectronics Co Ltd
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Nantong Fujitsu Microelectronics Co Ltd
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Publication of CN104078374A publication Critical patent/CN104078374A/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/4917—Crossed wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Abstract

The present invention provides the wire pad intensifying method of a kind of semiconductor device, at the weld zone welding lead on the surface of framework lead；At the described framework lead pad with described wire, bridge fastener, make the middle part side compacted conductor to framework lead of fastener, and the part that fastener is positioned at wire both sides is welded and fixed with framework lead.By arranging fastener at the pad of wire, by wire to a side compression of framework lead.This structure is used to improve the interface cohesion that the framework lead front attendant of a stage actor seals between plastic packaging material, during layering guiding line pad extends, the only solder joint of fastener just may proceed to the pad extension of guiding line because layering extends after thoroughly peeling off, therefore use this structure can prevent and improve wire pad and peel off.

Description

The wire pad intensifying method of semiconductor device
Technical field
The present invention relates to semiconductor device packaging technique field, particularly relate to leading of a kind of semiconductor device Wire bonding contact intensifying method.
Background technology
In semiconductor power device encapsulation process, mainly use the wire such as aluminum steel, aluminium strip by chip and Effectively welding is realized, to meet big electricity during power device work between the framework lead of lead frame Pressure, the contour requirement on electric performance of big electric current.After aluminum wire bonding as shown in Figure 1 and Figure 2, including: in order to Heat radiation and the framework slide holder 1 of carrying chip 2；Framework lead 3 in order to electrical ties；In order to even Knot chip 2 and the aluminum steel 4 of framework lead 3；In order to chip 2 is bonded in framework slide holder 1 Load glue 6.
Owing to power product operationally device inside temperature is higher, sometimes external operating environment also compare Badly, it is desirable to aluminum steel 4 is higher with the soldering reliability between framework lead 3, but at power In product reliability, reality still can be because of thermal stress, dampness, the ripple of process quality control when applying Dynamic etc. make aluminum steel 4 be peeling between framework lead 3, cause the electrical quantity of product, function to be lost Effect.Lost efficacy for this, although in the industry by bonding parameter, steel mouth structure, material, process layering control The aspects such as system improve soldering reliability, but sometimes there is also aluminum steel 4 with framework lead between Inefficacy, the follow-up process conditions ratio improved again is relatively limited.
Summary of the invention
Brief overview about the present invention given below, in order to some side about the present invention is provided The basic comprehension in face.Should be appreciated that this general introduction is not that the exhaustive about the present invention is summarized.It It is not intended to determine the key of the present invention or pith, is not the model of the intended limitation present invention Enclose.Its purpose is only to provide some concept in simplified form, more detailed in this, as discuss after a while The thin preamble described.
The present invention provides the wire pad intensifying method of a kind of semiconductor device,
Weld zone welding lead on the surface of framework lead；
At the described framework lead pad with described wire, bridge fastener, make described fastener Middle part press described wire to the side of described framework lead, and described fastener is positioned at described The part of wire both sides is welded and fixed with described framework lead.
The such scheme that the present invention provides, by arranging fastener at the pad of wire, will lead One side compression of alignment framework lead.Use this structure to improve framework lead front attendant of a stage actor envelope to mould Interface cohesion between envelope material, this interface cohesion is flexible because of the preferable ductility deflection of fastener, Can alleviate and stop the pad direction of framework lead edge delamination guiding line and framework lead Extension, during the pad of layering guiding line with framework lead extends, in fastener and framework First the solder joint of lead-in wire stops that the solder joint of extending internally further of layering, only fastener prolongs because being layered Stretch and just may proceed to the pad of guiding line after thoroughly peeling off and extend, thus use this structure to prevent and Improve wire pad to peel off.
Accompanying drawing explanation
Below with reference to the accompanying drawings illustrate embodiments of the invention, the present invention can be more readily understood that Above and other objects, features and advantages.Parts in accompanying drawing are intended merely to illustrate that the present invention's is former Reason.In the accompanying drawings, same or similar technical characteristic or parts will use same or similar accompanying drawing Labelling represents.
Fig. 1 is the structural representation of prior art；
Fig. 2 is the A-A profile of Fig. 1；
Fig. 3 is for implementing the wire pad intensifying method of the semiconductor device that the embodiment of the present invention provides Course of processing schematic diagram；
Fig. 4 is for implementing the wire pad intensifying method of the semiconductor device that the embodiment of the present invention provides The schematic diagram of the semiconductor device obtained；
Fig. 5 is the B-B profile of Fig. 4；
The structural representation of weld zone one wire two fastener side by side that Fig. 6 provides for the embodiment of the present invention Figure；
Fig. 7 intersects the structural representation of fastener for weld zone one wire two that the embodiment of the present invention provides Figure；
The structure of weld zone two wire two fastener side by side side by side that Fig. 8 provides for the embodiment of the present invention Schematic diagram；
Fig. 9 intersects the structure of fastener for weld zone two wire two side by side that the embodiment of the present invention provides Schematic diagram；
The structure of the weld zone two wire one aluminium strip fastener side by side that Figure 10 provides for the embodiment of the present invention Schematic diagram；
The weld zone two aluminium strip fastener side by side of wire two side by side that Figure 11 provides for the embodiment of the present invention Structural representation.
Detailed description of the invention
Embodiments of the invention are described with reference to the accompanying drawings.An accompanying drawing or a kind of real in the present invention Execute the element described in mode and feature can with in one or more other accompanying drawing or embodiment The element and the feature that illustrate combine.It should be noted that, for purposes of clarity, accompanying drawing and explanation save Omit unrelated to the invention, parts known to persons of ordinary skill in the art and the expression of process and retouched State.
As it is shown on figure 3, the wire pad strengthening side of the semiconductor device of embodiment of the present invention offer Method, at the weld zone welding lead 4 on the surface of framework lead 3；At framework lead 3 and wire Bridging fastener 5 at the pad of 4, the middle part making fastener 5 is tight to the side of framework lead 3 Press wire 4, and the part that fastener 5 is positioned at wire both sides carries out with framework lead 5 welding admittedly Fixed.
In technical solution of the present invention, as required, fastener 5 can arrange one or more, leads Line 4 can be one or more, and when wire is many, each wire is preferably arranged side by side.
The such scheme that the present invention provides, by arranging fastener 5 at the pad of wire 4, comes By wire 4 to a side compression of framework lead 3.This structure is used to improve framework lead 3 The front attendant of a stage actor seals the interface cohesion between plastic packaging material, and this interface cohesion preferably prolongs because of fastener 5 Malleability deflection flexibility, in can alleviating and stop framework lead 3 edge delamination guiding line 4 and framework The pad Directional Extension of lead-in wire 3, the pad at layering guiding line 4 with framework lead 3 extends During, first fastener 5 stops extending internally further of layering with the solder joint of framework lead 3, The only solder joint of fastener 5 just may proceed to the pad of guiding line 4 because layering extends after thoroughly peeling off Extend, therefore use this structure can prevent and improve wire pad and peel off.
As shown in Figure 4, Figure 5, the wire welding of the semiconductor device of embodiment of the present invention offer is provided The semiconductor device that some intensifying method obtains, including framework lead 3, the surface of framework lead 3 Having weld zone, weld zone is welded with wire 4, and wire 4 is between framework lead 3 and chip 2 Being welded and fixed at least through two solder joints, solder joint sets along the bearing of trend of wire 4 from the end of wire 4 Put；Having fastener 5 at wire 4 pad, the middle part of fastener 5 is to framework lead 3 Side compacted conductor 4, fastener 5 is positioned at the part of wire 4 both sides and welds with framework lead 3 solid Fixed.
In actually used, this semiconductor device includes frame such as but not limited to power device, power device Frame slide holder 1, framework slide holder 1 is fixedly connected with chip 2, and load glue 6 can be used core Sheet 2 is bonded on framework slide holder 1, and wire 4 welds with chip 2 away from one end of framework lead 3 Connect.Wire 4 other end is connected to weld zone by said structure.
In addition, it is necessary to it is noted that at pad as referred to herein, may refer to a solder joint, also Can be the region of multiple solder joint composition, pad be to pass through by soldering appliance from what wire termination was counted The modes such as ultrasonic, extruding produce deformation and are bonded in the part on framework lead 3 surface.
In actually used, fastener is positioned at the part of wire both sides all at least through a solder joint, with frame Frame lead is welded and fixed.The quantity of this solder joint can be according to the space size of framework lead Fixed.
It addition, the solder joint shape of fastener is the trapezoidal of extruding formation.The solder joint of fastener uses extruding The trapezoidal shape formed, compared with the line footpath of fastener, trapezoidal can increase contact area, and then make Weld more firm.
Further, at pad, have two fasteners 5, two fasteners 5 be arranged side by side or Arranged in a crossed manner.
At least two fastener is had at pad.As one of which implementation, such as Fig. 6 Shown in, across having set two fasteners being arranged side by side 5 at pad on framework lead 3.As separately Outer a kind of implementation, as it is shown in fig. 7, across having set two intersections at pad on framework lead 3 The fastener 5 arranged.Furthermore, it is necessary to explanation, in addition to the above-mentioned two kinds of implementations enumerated, Can also take other form between the wire and the fastener that are pressed solidly.For example, it may be single merchandiser group Close (wire and the combination of a fastener), how with many combinations, (multiple conducting wires presses solidly with multiple The combination of part), list is (many with many combinations (wire and the combination of multiple fasteners), the combination of many merchandisers Root wire and the combination of a fastener), compound mode is according to framework inter-lead space size, wire Size, fastener size etc. determine the coupling of number of combinations.
By pressing under arranging two fasteners 5 and implementing wire 4, the reliability of connection is high, favorably In promoting antistripping ability.
Further, the same weld zone of framework lead 3 is welded with two wires 4, two wires 4 are arranged side by side, and same fastener 5 is crossed on two wires.
As described in Figure 8, the same weld zone of framework lead 3 is welded with two wires 4, leads for two Line 4 is arranged side by side, and across setting two fasteners 5 side by side at pad, and same fastener 5 is across setting On two wires 4.
As it is shown in figure 9, the same weld zone of framework lead 3 is welded with two wires 4, lead for two Line 4 is arranged side by side, and across setting two fasteners 5 intersected at pad, and same fastener 5 is across setting On two wires 4.Certainly, the same weld zone at framework lead 3 is welded with a plurality of wire Time, same fastener 5 can be crossed on a plurality of wire 4 simultaneously.
Further, fastener 5 is aluminum steel or aluminium strip.As Figure 4-Figure 7, fastener 5 is all adopted Be aluminum steel.
It addition, fastener 5 can also use aluminium strip.
As shown in Figure 10, the same weld zone of framework lead 3 is welded with two wires 4, two Wire 4 is arranged side by side, across setting a fastener (this fastener as aluminium strip) 7, this pressure at pad Firmware 7 is crossed on two wires 4.
As shown in figure 11, the same weld zone of framework lead 3 is welded with two wires 4, two Wire 4 is arranged side by side, across setting two fasteners side by side (this fastener as aluminium strip) 7 at pad, And same fastener 7 is crossed on two wires 4.Certainly, the same welding of framework lead 3 District can also be welded with a plurality of wire 4, and a plurality of wire 4 is arranged side by side, at pad across set three with On the fastener 7 that is arranged side by side, and same fastener 7 is crossed on a plurality of wire 4 simultaneously.? When the quantity of the fastener 7 arranged is more than three, fastener 7 is preferably arranged side by side, naturally it is also possible to The mode intersected is used to arrange.
Last it is noted that above example is only in order to illustrate technical scheme, rather than right It limits；Although the present invention being described in detail with reference to previous embodiment, this area common Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be repaiied by it Change, or wherein portion of techniques feature is carried out equivalent；And these amendments or replacement, not The essence making appropriate technical solution departs from the spirit and scope of various embodiments of the present invention technical scheme.

Claims (5)

1. the wire pad intensifying method of a semiconductor device, it is characterised in that
Weld zone welding lead on the surface of framework lead；
At the described framework lead pad with described wire, bridge fastener, make described pressure Described wire is pressed to the side of described framework lead in the middle part of firmware, and by described fastener The part being positioned at described wire both sides is welded and fixed with described framework lead；
Having at least two fastener at described pad, two described fasteners are arranged side by side Or it is arranged in a crossed manner.
The wire pad intensifying method of semiconductor device the most according to claim 1, It is characterized in that,
The same described weld zone of described framework lead is welded with at least two described wires, and two Described in bar, wire is arranged side by side, same described fastener be crossed on two or the above wire it On.
The wire pad intensifying method of semiconductor device the most according to claim 1, It is characterized in that, described fastener is aluminum steel or aluminium strip.
The wire pad intensifying method of semiconductor device the most according to claim 1, its Being characterised by, described fastener is positioned at the part of described wire both sides all at least through a solder joint, It is welded and fixed with described framework lead.
The wire pad intensifying method of semiconductor device the most according to claim 4, its Being characterised by, the described solder joint shape of described fastener is the trapezoidal of extruding formation.
CN201410308014.XA 2014-06-30 2014-06-30 The wire pad intensifying method of semiconductor device Active CN104078374B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04192588A (en) * 1990-11-27 1992-07-10 Sony Corp Connecting structure of circuit pattern on one face to circuit pattern on another face of printed-circuit board
WO2004077901A2 (en) * 2003-02-27 2004-09-10 Endress+Hauser Gmbh+Co. Kg Printed circuit board and method for fixing wired parts thereto
JP2005252006A (en) * 2004-03-04 2005-09-15 Sumitomo Electric Ind Ltd Integrated circuit module
JP2013058553A (en) * 2011-09-07 2013-03-28 Nikon Corp Shielded signal line and single-sided flexible substrate therefor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04192588A (en) * 1990-11-27 1992-07-10 Sony Corp Connecting structure of circuit pattern on one face to circuit pattern on another face of printed-circuit board
WO2004077901A2 (en) * 2003-02-27 2004-09-10 Endress+Hauser Gmbh+Co. Kg Printed circuit board and method for fixing wired parts thereto
JP2005252006A (en) * 2004-03-04 2005-09-15 Sumitomo Electric Ind Ltd Integrated circuit module
JP2013058553A (en) * 2011-09-07 2013-03-28 Nikon Corp Shielded signal line and single-sided flexible substrate therefor

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