CN104064484B - The method of the strengthening wire pad of semiconductor power device - Google Patents
The method of the strengthening wire pad of semiconductor power device Download PDFInfo
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- CN104064484B CN104064484B CN201410307596.XA CN201410307596A CN104064484B CN 104064484 B CN104064484 B CN 104064484B CN 201410307596 A CN201410307596 A CN 201410307596A CN 104064484 B CN104064484 B CN 104064484B
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- wire
- flange
- framework
- lead
- power device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000005728 strengthening Methods 0.000 title claims abstract description 29
- 239000005022 packaging material Substances 0.000 claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 48
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 48
- 239000004411 aluminium Substances 0.000 claims description 21
- 229910000831 Steel Inorganic materials 0.000 claims description 18
- 239000010959 steel Substances 0.000 claims description 18
- 230000001141 propulsive Effects 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 238000003466 welding Methods 0.000 description 6
- 238000005476 soldering Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000875 corresponding Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Abstract
The method that the invention discloses the strengthening wire pad of a kind of semiconductor power device, comprises the following steps: the limit of at least side of framework lead is upwards holded up by (1), forms flange；(2) wire is welded on the weld zone on the framework lead surface beyond flange；(3) the periphery plastic packaging material of one end framework lead, flange and wire being connected with weld zone carries out plastic packaging.The present invention is by arranging flange and plastic packaging layer, framework lead is made to form latch-up structure, forming process is simple, the latch-up structure of framework lead after plastic packaging by the counteracting force of plastic packaging material, wire can be effectively improved with the adhesion between framework lead, thus improve the peel strength of wire, improve the reliability of power product.
Description
Technical field
The present invention relates to field of semiconductor package, be specifically related to the strengthening wire of a kind of semiconductor power device
The method of pad.
Background technology
In semiconductor power device encapsulation process, mainly use the metal wire such as aluminum steel, aluminium strip by chip and
Effectively welding is realized between the lead of lead frame, big voltage during to meet power device work, big
The contour requirement on electric performance of electric current.Encapsulating structure schematic diagram as shown in Fig. 1-a and Fig. 1-b, including: in order to
Heat radiation and the framework slide holder 1 of carrying chip 2；Framework lead 3 in order to electrical ties；In order to link
The aluminum steel 4 of chip 2 and framework lead 3 or aluminium strip 5；In order to chip 2 is bonded in framework slide holder
The load glue 6 of 1.
Owing to power product operationally device inside temperature is higher, sometimes external operating environment also compare evil
Bad, it is desirable to aluminum steel 4 or aluminium strip 5 are higher with the soldering reliability between framework lead 3, but
In power product reliability, during actual application, also it is because the ripple of thermal stress, dampness, process quality control
Dynamic etc. make aluminum steel 4, aluminium strip 5 be peeling between framework lead 3, cause product electrical quantity,
Disabler.Lost efficacy for this, although being divided by bonding parameter, steel mouth structure, material, process in the industry
The aspects such as layer control improve soldering reliability, but can't effectively avoid aluminum steel 4, aluminium strip 5
With the stripping between framework lead 3.
Summary of the invention
Brief overview about the present invention given below, in order to provide about certain aspects of the invention
Basic comprehension.Should be appreciated that this general introduction is not that the exhaustive about the present invention is summarized.It is not
Being intended to determine the key of the present invention or pith, nor is it intended to limit the scope of the present invention.Its mesh
Be only provide some concept in simplified form, in this, as discuss after a while in greater detail before
Sequence.
The purpose of the embodiment of the present invention is the defect for above-mentioned prior art, it is provided that a kind of it can be avoided that lead
Stripping between line and framework lead, improves the semiconductor power device of semiconductor power device reliability
Strengthening wire pad method.
To achieve these goals, the present invention adopts the technical scheme that:
The method of the strengthening wire pad of a kind of semiconductor power device, comprises the following steps:
(1) limit of at least side of framework lead is upwards holded up, form flange；
(2) wire is welded on the weld zone on the framework lead surface beyond flange；
(3) the periphery plastic packaging material of one end that framework lead, flange and wire are connected with weld zone
Carry out plastic packaging.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention, by arranging flange and plastic packaging layer, makes framework lead form latch-up structure, forming process
Simply, the latch-up structure of framework lead by the counteracting force of plastic packaging material, can effectively carry after plastic packaging
High wire is with the adhesion between framework lead, thus improves the peel strength of wire, improves power and produces
The reliability of product.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality
Execute the required accompanying drawing used in example or description of the prior art to be briefly described, it should be apparent that below,
Accompanying drawing in description is only some embodiments of the present invention, for those of ordinary skill in the art,
On the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 a is structural representation after the semiconductor power device aluminum wire bonding that the embodiment of the present invention provides；
Fig. 1 b is structural representation after the semiconductor power device aluminium strip bonding that the embodiment of the present invention provides；
Fig. 2 a be the embodiment of the present invention provide aluminum wire bonding after semiconductor power device wire strengthening weldering
Structural representation under the first making state of access node structure；
Fig. 2 b is the wire strengthening of the semiconductor power device after the aluminum wire bonding that the embodiment of the present invention provides
Structural representation under welding knot the second making state；
Fig. 2 c be the embodiment of the present invention provide aluminum wire bonding after semiconductor power device wire strengthening weldering
Structural representation under the third making state of access node structure；
Fig. 2 d is the wire strengthening of the semiconductor power device after the aluminum wire bonding that the embodiment of the present invention provides
Structural representation under welding the 4th kind of making state of knot；
Fig. 2 e be the embodiment of the present invention provide aluminum wire bonding after semiconductor power device wire strengthening weldering
Structural representation under access node structure finally making state；
Fig. 3 a is the wire strengthening weldering of semiconductor power device after the aluminium strip that the embodiment of the present invention provides is bonded
Structural representation under the first making state of access node structure；
Fig. 3 b is the wire strengthening of the semiconductor power device after the aluminium strip bonding that the embodiment of the present invention provides
Structural representation under welding knot the second making state；
Fig. 3 c is the wire strengthening weldering of semiconductor power device after the aluminium strip that the embodiment of the present invention provides is bonded
Structural representation under the third making state of access node structure；
Fig. 3 d is the wire strengthening of the semiconductor power device after the aluminium strip bonding that the embodiment of the present invention provides
Structural representation under welding the 4th kind of making state of knot；
Fig. 3 e is the wire strengthening weldering of semiconductor power device after the aluminium strip that the embodiment of the present invention provides is bonded
Structural representation under access node structure finally making state.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with this
Accompanying drawing in bright embodiment, is clearly and completely described the technical scheme in the embodiment of the present invention,
Obviously, described embodiment is a part of embodiment of the present invention rather than whole embodiments.At this
Element and feature described in one accompanying drawing of invention or a kind of embodiment can be with one or more
Element shown in other accompanying drawing or embodiment and feature combine.It should be noted that, for clearly mesh
, accompanying drawing and explanation eliminate unrelated to the invention, parts known to persons of ordinary skill in the art
With the expression processed and description.Based on the embodiment in the present invention, those of ordinary skill in the art are not having
Pay the every other embodiment obtained under creative work premise, broadly fall into the model of present invention protection
Enclose.
The method of the strengthening wire pad of a kind of semiconductor power device, comprises the following steps:
(1) limit of at least side of framework lead is upwards holded up, form flange；
(2) wire is welded on the weld zone on the framework lead surface beyond flange；
(3) the periphery plastic packaging material of one end that framework lead, flange and wire are connected with weld zone
Carry out plastic packaging.
The present invention, by arranging flange and plastic packaging layer, makes framework lead form latch-up structure, draws in framework
The latch-up structure of line by the counteracting force of plastic packaging material, can be effectively improved wire with in framework after plastic packaging
Adhesion between lead-in wire, thus improve the peel strength of wire, improve the reliability of power product.
In the present embodiment, in described step (1), the limit of the both sides of framework lead is upwards holded up,
Flange is formed in both sides；In described step (2), wire is welded on the weld zone between the flange of both sides.
Both sides are respectively provided with flange, further increase the latch-up structure counteracting force to plastic packaging material, and raising is led
Line, with the adhesion between framework lead, prevents the stripping of wire.
In the present embodiment, also include between described step (2) and step (3):
Placing a ramp structure to the top of each flange, propulsive mechanism drives a ramp structure downward respectively
Mobile, make the flange of extruded frame lead both sides, inclined-plane in ramp structure, when ramp structure goes downwards to
Back up again in situ after lowest order, final flange is parallel with inclined-plane.
The present invention drives ramp structure to realize the extruding to flange by propulsive mechanism, and technique is the most easily grasped
Make, vertically holding up flange and can being pre-formed in framework factory of framework lead both sides, turned over by extruding
Limit, makes flange and plastic packaging material have higher adhesion, passes through the locking of plastic packaging material thus improve after plastic packaging
Aluminum steel or aluminium strip pad peel strength, thus improve its soldering reliability.
See Fig. 2 b, Fig. 2 c, Fig. 2 d, Fig. 3 b, Fig. 3 c and Fig. 3 d, in the present embodiment, in order to enter
One step strengthens latching force to plastic packaging material, by counteracting force thus improve wire and weld on framework lead
The peel strength of contact, inclined-plane is 5～85 ° with the angle theta 1 of horizontal plane, i.e. final flange 30 and frame
The angle theta 2 on frame lead 3 surface is 5～85 °.
In the present embodiment, flange 30 is at the 2.5-3.5 of the thickness that height is framework lead 3 of vertical direction
Times.It is preferably 3.0 times.
In order to have stronger latching force to plastic packaging material, the present invention is firstly the need of in semiconductor power product institute
Form the little limit vertically holded up, i.e. flange with metal framework lead both sides, little limit height draws in framework
The line back side starts to calculate, and at least 2.5 times of framework lead thickness, aluminum steel or aluminium strip are welded on framework
Between the flange of lead.
The preferred embodiment of the present invention is as follows:
See Fig. 2 a, Fig. 2 b, Fig. 2 c, Fig. 2 d and Fig. 2 e, for quasiconductor after aluminum wire bonding of the present invention
The schematic flow sheet of the wire strengthening pad of power device, the strengthening wire of a kind of semiconductor power device
The method of pad, comprises the following steps:
(1) framework lead 3 includes the first framework lead 31, second that spacing distance sets gradually
Framework lead 32 and the 3rd framework lead 33, wire includes the first wire and two the second wires,
The limit of the 3rd framework lead 33 both sides is upwards holded up, forms flange 30；
(2) weld zone at the first framework lead 31 welds the first wire, at the 3rd framework lead
The weld zone of 33 is respectively welded two the second wires, and two the second wires are welded between two flange 30；
(3) Fig. 2 b, Fig. 2 c, Fig. 2 d, Fig. 3 b, Fig. 3 c and Fig. 3 d are seen, at aluminum steel 4 or aluminum
The top of framework lead 3 both sides with 5 is driven 5～85 ° of ramp structures 7 respectively by propulsive mechanism
Move down, when ramp structure encounters the flange that framework lead 3 both sides are vertically holded up, by under flange
Compressive strain, making flange 30 is 5～85 ° with the angle theta 2 on framework lead 3 surface；Finally work as inclined-plane
Structure 7 is multiple in situ back up after going downwards to lowest order.
(4) by first framework lead the 31, second framework lead the 32, the 3rd framework lead 33,
One end that flange the 30, first wire and the first framework lead 31 weld zone connect, two the second wires
The periphery plastic packaging material 8 of the one end being connected with the 3rd framework lead 33 weld zone carries out plastic packaging, is formed
The product of latch-up structure carries out the internal structure after plastic packaging as shown in Fig. 2 e and Fig. 3 e.
Seeing Fig. 2 e and Fig. 3 e, the flange of vertically holding up of framework lead both sides of the present invention can be at framework
Factory is pre-formed, and so can form required latch-up structure after aluminum steel 4 or aluminium strip 5 weld, mould
Be honored as a queen and plastic packaging material 8 had stronger latching force, by counteracting force thus improve aluminum steel 4 or aluminium strip 5
And the peel strength of pad between framework lead.Two the second wires of the present invention are welded on two flange
Between 30, plastic packaging material draws in first framework lead the 31, second framework lead the 32, the 3rd framework
One end that line 33, flange the 30, first wire and the first framework lead 31 weld zone connect, two the
One end plastic packaging material 8 that two wires and the 3rd framework lead 33 weld zone connect carries out plastic packaging, is formed
Plastic packaging layer, it is achieved the latch-up structure to framework lead 3, by the counteracting force of plastic packaging material 8 after plastic packaging,
Wire can be effectively improved with the adhesion between framework lead 3, thus improve the peel strength of wire,
Improve the reliability of power product.
See Fig. 2 a, Fig. 2 b, Fig. 2 c, Fig. 2 d and Fig. 2 e, the first wire and two the second wires equal
For aluminum steel 4.
See Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 3 d and Fig. 3 e, quasiconductor after being bonded for aluminium strip of the present invention
The schematic flow sheet of the wire strengthening pad of power device, the first wire is aluminum steel 4, leads for two second
Line is aluminium strip 5.
See Fig. 2 e and Fig. 3 e, actually used in, wire can be aluminum steel 4, aluminium strip 5 or aluminum steel 4
Combination with aluminium strip 5.
See Fig. 1 a and Fig. 1 b, actually used in, the strengthening wire of the semiconductor power device of the present invention
The method of pad is additionally included on framework slide holder 1 fixing 2, core of connection, by wire away from framework
One end of lead-in wire 3 is welded with chip 2.
Present invention aluminum matter bonding wire used in semiconductor power device encapsulation process, in welding process, improves
The firm intensity that aluminum matter bonding wire is connected with framework lead solder joint, present invention is particularly suitable for power relatively big or
/ and high MOSFET (the Metal-Oxide-Semiconductor Field-Effect of Reliability comparotive
Transistor, metal-oxide half field effect transistor), IGBT (Insulated Gate Bipolar Transistor),
Insulated gate bipolar transistor), the chip such as SiC use aluminum steel or aluminium strip to be welded on framework lead.
Last it is noted that above example is only in order to illustrate technical scheme, rather than to it
Limit；Although the present invention being described in detail with reference to previous embodiment, the ordinary skill of this area
Personnel it is understood that the technical scheme described in foregoing embodiments still can be modified by it, or
Person carries out equivalent to wherein portion of techniques feature；And these amendments or replacement, do not make corresponding skill
The essence of art scheme departs from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (8)
1. a semiconductor power device strengthening wire pad method, it is characterised in that include with
Lower step:
(1) limit of the both sides of framework lead is upwards holded up, form flange in both sides；Draw in framework
The limit of at least side of line is upwards holded up, and forms flange；
(2) wire is welded on the weld zone between the flange of both sides；
(3) the periphery plastic packaging material of one end framework lead, flange and wire being connected with weld zone enters
Row plastic packaging；
Also include between described step (2) and step (3):
Placing a ramp structure to the top of each flange, propulsive mechanism drives a ramp structure to moving down respectively
Dynamic, make the flange of extruded frame lead both sides, inclined-plane in ramp structure, when ramp structure goes downwards to minimum
Back up again in situ after Wei, final flange is parallel with inclined-plane.
The method of the strengthening wire pad of semiconductor power device the most according to claim 1, its
Being characterised by, described inclined-plane is 5～85 ° with the angle of horizontal plane.
The method of the strengthening wire pad of semiconductor power device the most according to claim 1, its
Being characterised by, described flange is at 2.5-3.5 times of the thickness that height is described framework lead of vertical direction.
The method of the strengthening wire pad of semiconductor power device the most according to claim 3, its
Being characterised by, described flange is at 3.0 times of the thickness that height is described framework lead of vertical direction.
5. according to the side strengthening wire pad of the semiconductor power device described in any one of claim 1-4
Method, it is characterised in that described framework lead include the first framework lead that spacing distance sets gradually,
Second framework lead and the 3rd framework lead, described wire includes the first wire and two the second wires；
Described step (1) including: is upwards holded up on the limit of the 3rd framework lead both sides, forms flange；
Described step (2) including: welds the first wire in the weld zone of the first framework lead, the 3rd
The weld zone of framework lead is respectively welded two the second wires.
The method of the strengthening wire pad of semiconductor power device the most according to claim 5, its
Being characterised by, described first wire and two the second wires are aluminum steel.
The method of the strengthening wire pad of semiconductor power device the most according to claim 5, its
Being characterised by, described first wire is aluminum steel, and two described second wires are aluminium strip.
The method of the strengthening wire pad of semiconductor power device the most according to claim 5, its
It is characterised by, is additionally included on framework slide holder fixing connection chip, by wire away from the one of framework lead
End welds with chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410307596.XA CN104064484B (en) | 2014-06-30 | The method of the strengthening wire pad of semiconductor power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410307596.XA CN104064484B (en) | 2014-06-30 | The method of the strengthening wire pad of semiconductor power device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104064484A CN104064484A (en) | 2014-09-24 |
| CN104064484B true CN104064484B (en) | 2016-11-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1291789A (en) * | 1999-09-01 | 2001-04-18 | 松下电子工业株式会社 | Manufacturing method of lead-wire frame and resin sealing type semiconductor device |
| JP2002237559A (en) * | 2001-02-09 | 2002-08-23 | Sanyo Electric Co Ltd | Method of manufacturing semiconductor device, and method of manufacturing hybrid integrated circuit device using the same |
| CN101794758A (en) * | 2009-01-22 | 2010-08-04 | 株式会社瑞萨科技 | Semiconductor device |
| CN102222657A (en) * | 2011-06-30 | 2011-10-19 | 天水华天科技股份有限公司 | Multi-ring-arranged double-integrated circuit (IC) chip packaging piece and production method thereof |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1291789A (en) * | 1999-09-01 | 2001-04-18 | 松下电子工业株式会社 | Manufacturing method of lead-wire frame and resin sealing type semiconductor device |
| JP2002237559A (en) * | 2001-02-09 | 2002-08-23 | Sanyo Electric Co Ltd | Method of manufacturing semiconductor device, and method of manufacturing hybrid integrated circuit device using the same |
| CN101794758A (en) * | 2009-01-22 | 2010-08-04 | 株式会社瑞萨科技 | Semiconductor device |
| CN102222657A (en) * | 2011-06-30 | 2011-10-19 | 天水华天科技股份有限公司 | Multi-ring-arranged double-integrated circuit (IC) chip packaging piece and production method thereof |
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Address after: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee after: Tongfu Microelectronics Co., Ltd. Address before: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee before: Fujitsu Microelectronics Co., Ltd., Nantong |