CN104051592A - 一种高可靠性的led支架 - Google Patents
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 8
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- 239000012535 impurity Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
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- 238000004806 packaging method and process Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
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- 229910000967 As alloy Inorganic materials 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
一种高可靠性的LED支架，它涉及半导体照明技术领域，它的封装基座(10)设置于引线框架(20)上，封装基座(10)和引线框架(20)成型为一体，且成型为一种半包封结构，引线框架(20)为平板状，封装基座(10)上设置有反射凹部(10a)，引线框架(20)位于反射凹部(10a)底部的上表面(20a)和露于封装基座(10)外的底表面(20b)被施以电镀处理，与封装基座(10)结合的引线框架(20)的上表面(20a)至少有部分未被施以电镀处理；它能极大的降低外部水分、氧气、杂质等进入LED器件内部的速率，从而降低器件内部芯片、金线、齐纳管等部件受到水分、氧气、杂质等侵蚀的概率，使器件的可靠性更高，寿命更长。
Description
技术领域：
本发明涉及半导体照明技术领域，具体涉及一种高可靠性的LED支架。
背景技术：
发光二极管器件属于半导体发光技术，其关键特征是驱动电压低、发光效率高、环保、抗震性强，被大量的应用在户内外图文显示屏、广告模组、液晶屏显示背光、商业照明领域。发光二极管器件的一般做法是将发光芯片放置在一个有容纳腔的半包封的LED支架结构内，并用导线将芯片和支架上的电极连接，最后采用密封剂将半包封结构密封。芯片可以是发射紫光、蓝光、红光、黄光、绿光中的任一种颜色的芯片，也可以是发射几种不同颜色的多个芯片的组合，并且人们往往采用在密封剂中添加荧光物质的方式来满足更多的不同发光颜色的需求。
现有技术的LED支架一般是采用绝缘本体和金属板材密合制成，为了提高金属板材对水汽、氧气的耐蚀性以及增加金属板材表面的反光率，在密合之前，一般先要对金属板材施以电镀处理，电镀处理后，再采用射出成形或者注塑成型的方式使绝缘本体和金属板材结合，由于经过电镀处理的金属板材表面粗糙度降低，支架上的绝缘本体和金属板材之间的结合力低，结合面缝隙较大，采用此支架封装的器件在应用过程中，外界的水分、氧气、杂质等沿绝缘本体和金属板材的结合面渗入支架单体内部的速率快，封装器件内部的芯片、金线、齐纳管等部件失效的概率高，从而导致器件可靠性降低，寿命缩短等产品质量问题，在使用过程中，形成了LED器件本身较严重的隐患。
发明内容：
本发明的目的是提供一种高可靠性的LED支架，它能极大的降低外部水分、氧气、杂质等进入LED器件内部的速率，从而降低器件内部芯片、金线、齐纳管等部件受到水分、氧气、杂质等侵蚀的概率，使器件的可靠性更高，寿命更长。
为了解决背景技术所存在的问题，本发明是采用如下技术方案：它包含封装基座10、引线框架20，封装基座10设置于引线框架20上，封装基座10和引线框架20成型为一体，且成型为一种半包封结构，引线框架20为平板状，并使用铜、铁、铝、合金等电性优良的导体形成，且以成正负一对的方式以特定的间隔隔开设置，封装基座10上设置有反射凹部10a，引线框架20位于反射凹部10a底部的上表面20a和露于封装基座10外的底表面20b被施以电镀处理，与封装基座10结合的引线框架20的上表面20a至少有部分未被施以电镀处理。
所述的封装基座10为热硬化性树脂材料制成的封装基座，因为热硬化性树脂优异的耐热、耐光性，在器件使用过程中的芯片发光、发热的环境下，其劣化缓慢。
本发明由于与封装基座10结合的引线框架20的上表面20a至少有部分未被施以电镀处理，未被施以电镀处理的上表面20a和封装基座10之间的结合更紧密，使得外界水分、氧气、杂质进入支架内部困难，支架内部的芯片、金线、齐纳管等部件受侵蚀的几率小，从而提高了LED封装器件的可靠性和使用寿命。
本发明结构简单，设计合理，它能有效克服现有技术的弊端，保护支架内部的芯片、金线、齐纳管等部件，使封装器件的可靠性更高，寿命更长。
附图说明：
图1为本发明的结构示意图，
图2为图1的底视图，
图3为图1的A-A向剖视图，
图4为本发明中引线框架20的结构示意图，
图5为具体实施方式三的结构示意图。
具体实施方式：
具体实施方式一：参看图1-图4，本具体实施方式采用如下技术方案：它包含封装基座10、引线框架20，封装基座10设置于引线框架20之上，封装基座10和引线框架20成型为一体，且成型为一种半包封结构，引线框架20为平板状，并使用铜、铁、铝、合金等电性优良的导体形成，且以成正负一对的方式以特定的间隔隔开设置，封装基座10上设置有反射凹部10a，引线框架20位于反射凹部10a底部的上表面20a和露于封装基座10外的底表面20b被施以电镀处理，与封装基座10结合的引线框架20的上表面20a至少有部分未被施以电镀处理。
所述的封装基座10为热硬化性树脂材料制成的封装基座，因为热硬化性树脂优异的耐热、耐光性，在器件使用过程中的芯片发光、发热的环境下，其劣化缓慢。
本具体实施方式由于与封装基座10结合的引线框架20的上表面20a至少有部分未被施以电镀处理，未被施以电镀处理的上表面20a和封装基座10之间的结合更紧密，使得外界水分、氧气、杂质进入支架内部困难，支架内部的芯片、金线、齐纳管等部件受侵蚀的几率小，从而提高了LED封装器件的可靠性和使用寿命。
具体实施方式二：本具体实施方式采用如下技术方案：所述的与封装基座10结合的引线框架20的上表面20a替换为全部未被施以电镀处理，从而使封装基座10和引线框架20的结合面拥有更佳的结合力。
具体实施方式三：参看图5，本具体实施方式采用如下技术方案：所述的与封装基座10结合的引线框架20的上表面20a替换被施以蚀刻处理，被蚀刻处理后，引线框架的上表面20a粗糙度增加，粗糙表面与封装基座10之间会有更加优异的结合性能。
本具体实施方式结构简单，设计合理，它能有效克服现有技术的弊端，保护支架内部的芯片、金线、齐纳管等部件，使封装器件的可靠性更高，寿命更长。
Claims (4)
1.一种高可靠性的LED支架，它包含封装基座(10)、引线框架(20)，封装基座(10)设置于引线框架(20)上，封装基座(10)和引线框架(20)成型为一体，且成型为一种半包封结构，引线框架(20)为平板状，封装基座(10)上设置有反射凹部(10a)，引线框架(20)位于反射凹部(10a)底部的上表面(20a)和露于封装基座(10)外的底表面(20b)被施以电镀处理，其特征在于与封装基座(10)结合的引线框架(20)的上表面(20a)至少有部分未被施以电镀处理。
2.根据权利要求1所述的一种高可靠性的LED支架，其特征在于所述的封装基座(10)为热硬化性树脂材料制成的封装基座。
3.根据权利要求1所述的一种高可靠性的LED支架，其特征在于所述的与封装基座(10)结合的引线框架(20)的上表面(20a)替换为全部未被施以电镀处理。
4.根据权利要求1所述的一种高可靠性的LED支架，其特征在于所述的与封装基座(10)结合的引线框架(20)的上表面(20a)替换被施以蚀刻处理。
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2556791Y (zh) * | 2002-04-30 | 2003-06-18 | 诠兴开发科技股份有限公司 | 连结式表面粘着型发光二极管 |
| CN202231055U (zh) * | 2011-09-02 | 2012-05-23 | 深圳市瑞丰光电子股份有限公司 | 发光二极管支架和发光二极管 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2556791Y (zh) * | 2002-04-30 | 2003-06-18 | 诠兴开发科技股份有限公司 | 连结式表面粘着型发光二极管 |
| CN202231055U (zh) * | 2011-09-02 | 2012-05-23 | 深圳市瑞丰光电子股份有限公司 | 发光二极管支架和发光二极管 |
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