CN104037213A - 用于常开iii族氮化物晶体管以获得常关断功能的驱动器 - Google Patents

用于常开iii族氮化物晶体管以获得常关断功能的驱动器 Download PDF

Info

Publication number
CN104037213A
CN104037213A CN201410085283.4A CN201410085283A CN104037213A CN 104037213 A CN104037213 A CN 104037213A CN 201410085283 A CN201410085283 A CN 201410085283A CN 104037213 A CN104037213 A CN 104037213A
Authority
CN
China
Prior art keywords
drive circuit
pass transistor
nmos pass
enhancement mode
cascade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410085283.4A
Other languages
English (en)
Other versions
CN104037213B (zh
Inventor
S·彭德哈尔卡
N·特珀尔内尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN104037213A publication Critical patent/CN104037213A/zh
Application granted granted Critical
Publication of CN104037213B publication Critical patent/CN104037213B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8236—Combination of enhancement and depletion transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
    • H02M5/04—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
    • H02M5/22—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M5/25—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M5/257—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M5/2573—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

本发明涉及一种用于常开III族氮化物晶体管以获得常关断功能的驱动器。一种半导体器件包括耗尽型GaN FET和集成驱动器/共源共栅IC。集成驱动器/共源共栅IC包括增强型共源共栅NMOS晶体管，其串联连接到GaN FET的源极节点。集成驱动器/共源共栅IC进一步包括驱动器电路，其调节选通输入信号并向共源共栅NMOS晶体管的栅极节点提供适当的数字波形。共源共栅NMOS晶体管和驱动器电路形成在同一硅衬底上。

Description

用于常开III族氮化物晶体管以获得常关断功能的驱动器
技术领域
本发明涉及半导体器件领域。更具体地，本发明涉及半导体器件中的氮化镓FET。
背景技术
与硅FET相比，由诸如氮化镓（GaN）这样的III-N材料制成的场效应晶体管（FET）表现出电源开关所期望的特性，诸如高带隙和高热导率。耗尽型GaN FET比增强型GaN FET制造起来简单、便宜，因此可以是电源开关半导体器件所期望的。然而，还可以期望电源开关在非加电状态下具有高阻抗，这在耗尽型GaN FET中没有实现。
发明内容
以下提供的概要旨在提供本发明的一个或更多个方面的基本理解。该概要并不是本发明的详尽概括，并且也不旨在确定本发明的关键或者决定性要素，也不描述其范围。相反，本概要的主要目的在于以简化形式呈现本发明的一些概念，作为对随后提供的更详细描述的序言。
一种半导体器件包括耗尽型GaN FET和集成驱动器/共源共栅集成电路（IC）。集成驱动器/共源共栅IC包括增强型共源共栅n沟道金属氧化物半导体（NMOS）晶体管，其串联连接到GaN FET的源极节点。集成驱动器/共源共栅IC进一步包括驱动器电路，其调节选通输入信号并向共源共栅NMOS晶体管的栅极节点提供适当的数字波形。共源共栅NMOS晶体管和驱动器电路形成在同一硅衬底上。
附图说明
图1是包含耗尽型GaN FET和集成驱动器/共源共栅IC的半导体器件的示意图。
图2A到图2C是示例性集成驱动器/共源共栅IC的截面图，以制造的连续阶段示出。
图3A到图3D是另一个示例性集成驱动器/共源共栅IC的截面图，以制造的连续阶段示出。
图4A到图4C是耗尽型GaN FET的截面图，以制造的连续阶段示出。
具体实施方式
参照附图描述本发明。附图并不按比例绘出，提供这些附图仅在于例示本发明。以下参照图示的示例应用描述本发明的若干方面。应理解阐述的若干具体细节、关系、方法旨在提供对本发明的理解。然而，本领域技术人员将容易理解本发明能够在没有一个或者更多个具体细节的情况下或者利用其它方法被实现。在其它示例中，没有详细示出已知结构或操作以避免混淆本发明。本发明不限于所例示的动作或事件的顺序，因为一些动作可以按照不同顺序和/或与其它动作或者事件同时进行。此外，实现根据本发明的方法不要求所有示出的动作或者事件。
一种半导体器件包括耗尽型GaN FET和集成驱动器/共源共栅IC。集成驱动器/共源共栅IC包括增强型共源共栅NMOS晶体管，其串联连接到GaN FET的源极节点。集成驱动器/共源共栅IC进一步包括驱动器电路，其调节选通输入信号并向共源共栅NMOS晶体管的栅极节点提供适当的数字波形。共源共栅NMOS晶体管和驱动器电路形成在同一硅衬底上。
出于本描述的目的，术语“III-N”被理解为表示一种半导体材料，其中，第三族元素也就是铝、镓和铟，以及可能硼，提供所述半导体材料中的原子的一部分，而氮原子提供所述半导体材料中的原子的剩余部分。III-N半导体材料的示例是氮化镓、氮化硼镓、氮化铝镓、氮化铟和氮化铟铝镓。描述材料的元素成分的术语并不暗示元素的具体化学计量。出于本描述的目的，术语GaN FET理解为表示包括III-N半导体材料的场效应晶体管。
图1是包含耗尽型GaN FET102和集成驱动器/共源共栅IC104的半导体器件100的示意图。GaN FET102的漏极节点106连接到半导体器件100的漏极输入端子108。GaN FET102的源极节点110连接到集成驱动器/共源共栅IC104的上共源共栅输入/输出（I/O）端口112。GaN FET102的栅极节点114可以连接到集成驱动器/共源共栅IC104的下共源共栅I/O端口116，或者，另选地，可以连接到半导体器件100的Vss端子118。
集成驱动器/共源共栅IC104包括增强型共源共栅NMOS晶体管120。共源共栅NMOS晶体管120的漏极节点122连接到上共源共栅I/O端口112。共源共栅NMOS晶体管120的源极节点124连接到集成驱动器/共源共栅IC104的内部Vss节点126。内部Vss节点126通过集成驱动器/共源共栅IC104的Vss端口128连接到半导体器件100的Vss端子118。如果GaN FET102的栅极节点114连接到下共源共栅I/O端口116，则内部Vss节点126连接到下共源共栅I/O端口116。
选通输入信号130提供到半导体器件100的栅端子132，其连接到集成驱动器/共源共栅IC104的栅极I/O端口134。选通输入信号130可以具有小于100纳秒的周期，其频率高于10兆赫兹（MHz）。集成驱动器/共源共栅IC104通过驱动器电路136调节选通输入信号130，并向共源共栅NMOS晶体管120的栅极节点138提供适当的数字波形。驱动器电路130可以包括，例如，边缘检测器电路140，诸如图1描绘的施密特触发器电路，以提供与选通输入信号130的上升部分和下降部分对应的适当的尖锐信号。通过集成驱动器/共源共栅IC104的Vcc端口144连接的半导体器件100的Vcc端子142可以向边缘检测器电路140提供电力。
驱动器电路136还可以包括，例如，电平转换器电路146，其从边缘检测器电路140接收信号并提供适用于驱动共源共栅NMOS晶体管120的更高或更低电压信号。可以通过经集成驱动器/共源共栅IC104的Vdd端口150连接的半导体器件100的Vcc端子142和Vdd端子148提供电平转换器电路146的电力。
驱动器电路136可以进一步包括，例如，驱动器缓冲器152，其从电平转换器电路146接受电压信号并向共源共栅NMOS晶体管120的栅极节点138提供具有适当电流的驱动信号。驱动器缓冲器152可以连接到Vdd端口150，以使电力可以通过半导体器件100的Vdd端子142提供给驱动器缓冲器152。在本示例的范围内，驱动器电路136中可以包括其它电路和部件。
图2A到图2C是示例性集成驱动器/共源共栅IC的截面图，其以制造的连续阶段示出。参照图2A，集成驱动器/共源共栅IC204形成在硅衬底252中。硅衬底252可以是，例如，单晶硅晶片、绝缘体上硅（SOI）晶片、具有不同晶体取向区域的混合取向技术（HOT）晶片、或者适用于制造集成驱动器/共源共栅IC204的其它硅衬底。集成驱动器/共源共栅IC204包括增强型共源共栅NMOS晶体管220的区域、驱动器电路p沟道金属氧化物半导体（PMOS）晶体管254的区域和驱动器电路NMOS晶体管256的区域。驱动器电路PMO晶体管254和驱动器电路NMOS晶体管256是集成驱动器/共源共栅IC204的一个或更多个电路，例如，如参照图1所描述的驱动器缓冲器、电平转换器电路或者边缘检测器电路中的部件。
场氧化物元件258可以形成在硅衬底252的顶表面以横向隔离共源共栅NMOS晶体管220的区域、驱动器电路PMOS晶体管254的区域和驱动器电路NMOS晶体管256的区域。场氧化物258可以通过，例如，浅槽沟道隔离（STI）工艺或硅的局部氧化（LOCOS）工艺形成。
栅介电层260形成在硅衬底252的顶表面，同时形成在共源共栅NMOS晶体管220的区域、驱动器电路PMOS晶体管254的区域和驱动器电路NMOS晶体管256的区域中。栅介电层260可以包括，例如，二氧化硅、氮氧化硅、氧化铝、氮氧化铝、氧化铪、硅酸铪、氧氮化硅铪、氧化锆、硅酸锆、氮氧化硅锆以及上述材料的组合或者其它绝缘材料的一层或更多层。由于在50℃到800℃暴露于含氮等离子体或含氮环境气体，栅介电层260可以包括氮。对于5伏栅-源工作电压，栅介电层260可以有10-14纳米厚，或者对于12伏工作电压，可以有30-36纳米厚。栅介电层260可以由各种栅电介质形成工艺中的任一种形成，例如，热氧化、氧化物层的等离子体氮化、和/或通过原子层沉积（ALD）的电介质材料沉积。
栅材料层262形成在栅介电层260上，同时形成在共源共栅NMOS晶体管220的区域、驱动器电路PMOS晶体管254的区域和驱动器电路NMOS晶体管256的区域中。栅材料层262可以包括，例如，50-500纳米的多晶硅。其它栅材料如氮化钛在本示例的范围内。栅介电层260和栅材料层262随后被图案化，以在共源共栅NMOS晶体管220的区域、驱动器电路PMOS晶体管254的区域和驱动器电路NMOS晶体管256的区域中形成栅结构。同时在共源共栅NMOS晶体管220的区域、驱动器电路PMOS晶体管254的区域和驱动器电路NMOS晶体管256的区域中形成栅材料层262和栅介电层260可以有利地减少集成驱动器/共源共栅IC204的制造复杂度和制造成本。
参照图2B，共源共栅NMOS晶体管220的区域包含包括位于栅介电层260上的共源共栅NMOS栅264的栅结构；驱动器电路PMOS晶体管254的区域包含包括位于栅介电层260上的驱动器电路PMOS栅266的栅结构；并且驱动器电路NMOS晶体管256的区域包含包括位于栅介电层260上的驱动器电路NMOS栅268的栅结构。由于同时在共源共栅NMOS晶体管220的区域中和驱动器电路NMOS晶体管256的区域中形成栅介电层260，所以共源共栅NMOS晶体管220的区域中的栅介电层260与驱动器电路NMOS晶体管256的区域中的栅介电层260具有大致相同的厚度。
在驱动器电路PMOS晶体管254的区域上形成n沟道轻掺杂漏（NLDD）注入掩膜270。NLDD注入工艺272将诸如磷和砷以及可能锑这样的n型掺杂物注入硅衬底252，以形成与共源共栅NMOS栅264相邻的共源共栅NMOS NLDD区域274，并同时形成与驱动器电路NMOS栅268相邻的驱动器电路NMOS NLDD区域276。同时形成共源共栅NMOS NLDD区域274和驱动器电路NMOS NLDD区域276可以有利地减少集成驱动器/共源共栅IC204的制造复杂度和制造成本。
参照图2C，在共源共栅NMOS栅264、驱动器电路PMOS栅266和驱动器电路NMOS栅268的侧面上形成栅侧壁间隔体278。在驱动器电路PMOS晶体管254的区域上方形成n沟道源/漏（NSD）注入掩模280。NSD注入工艺282将诸如磷和砷这样的n型掺杂物注入硅衬底252，以形成与共源共栅NMOS栅264上的栅侧壁间隔体278相邻的共源共栅NMOS NSD区域284，并且同时形成与驱动器电路NMOS栅268上的栅侧壁间隔体278相邻的驱动器电路NMOS NSD区域286。同时形成共源共栅NMOS NSD区域284和驱动器电路NMOS NSD区域286可以有利地减少集成驱动器/共源共栅IC204的制造复杂度和制造成本。
图3A到图3D是另一个示例性集成驱动器/共源共栅IC的截面图，其以制造的连续阶段示出。参照图3A，集成驱动器/共源共栅IC304形成在如参照图2A所述的硅衬底352中。集成驱动器/共源共栅IC304包括增强型共源共栅漏极延伸NMOS晶体管320的区域、驱动器电路PMOS晶体管354的区域和驱动器电路NMOS晶体管356的区域。驱动器电路PMOS晶体管354和驱动器电路NMOS晶体管356是集成驱动器/共源共栅IC304的一个或者更多个电路，例如，如参照图1所描述的驱动器缓冲器、电平转换器电路或者边缘检测器电路中的部件。场氧化物元件358可以形成在硅衬底352的顶表面，以横向地隔离共源共栅漏极延伸NMOS晶体管320的区域、驱动器电路PMOS晶体管354的区域和驱动器电路NMOS晶体管356的区域。场氧化物元件358也形成在共源共栅漏极延伸NMOS晶体管320的区域中，以成为延伸的漏极结构的部分。
在驱动器电路NMOS晶体管356的区域上方和共源共栅漏极延伸NMOS晶体管320的区域的源极部分上方形成阱注入掩模388。执行的n阱注入工艺390将诸如磷这样的n型掺杂物注入共源共栅漏极延伸NMOS晶体管320的区域的漏极部分中的硅衬底352中，以形成n型漏极延伸阱392，并同时在驱动器电路PMOS晶体管354的区域中注入n型掺杂物以形成n型PMOS阱394。同时形成漏极延伸阱392和PMOS阱394可以有利地减少集成驱动器/共源共栅IC304的制造复杂度和制造成本。
参照图3B，栅介电层360形成在硅衬底352的顶表面上，同时形成在共源共栅漏极延伸NMOS晶体管320的区域、驱动器电路PMOS晶体管354的区域和驱动器电路NMOS晶体管356的区域中，如参照图2A描述的。栅材料层362形成在栅介电层360上方，同时形成在共源共栅漏极延伸NMOS晶体管320的区域、驱动器电路PMOS晶体管354的区域和驱动器电路NMOS晶体管356的区域中，如参照图2A描述的。同时在共源共栅漏极延伸NMOS晶体管320的区域、驱动器电路PMOS晶体管354的区域和驱动器电路NMOS晶体管356的区域中形成栅材料层362以及栅介电层360可以有利地减少集成驱动器/共源共栅IC304的制造复杂度以及制造成本。
参照图3C，共源共栅漏极延伸NMOS晶体管320的区域包含包括位于栅介电层360上的共源共栅漏极延伸NMOS栅364的栅结构；驱动器电路PMOS晶体管354的区域包含包括位于栅介电层360上的驱动器电路PMOS栅366的栅结构；并且驱动器电路NMOS晶体管356的区域包含包括位于栅介电层360上的驱动器电路NMOS栅368的栅结构。由于同时在共源共栅漏极延伸NMOS晶体管320的区域中和驱动器电路NMOS晶体管356的区域中形成栅介电层360，因此共源共栅漏极延伸NMOS晶体管320的区域中的栅介电层360与驱动器电路NMOS晶体管356的区域中的栅介电层360具有大致相同的厚度。共源共栅漏极延伸NMOS栅364交叠漏极延伸阱392并且可以与漏极区中的场氧化物元件358交叠。
在驱动器电路PMOS晶体管354的区域上方形成NLDD注入掩膜370。NLDD注入工艺372将诸如磷和砷以及可能锑这样的n型掺杂物注入硅衬底352中，以形成与共源共栅漏极延伸NMOS栅364相邻的共源共栅NMOS NLDD源极侧区域374和接近但是不相邻于共源共栅漏极延伸NMOS栅364的共源共栅NMOS NLDD漏极侧区域396，并同时形成与驱动器电路NMOS栅368相邻的驱动器电路NMOS NLDD区域376。同时形成驱动器电路NMOS NLDD区域376、共源共栅NMOS NLDD源极侧区域374和共源共栅NMOS NLDD漏极侧区域396可以有利地减少集成驱动器/共源共栅IC304的制造复杂度和制造成本。
参照图3D，在共源共栅漏极延伸NMOS栅364、驱动器PMOS栅366和驱动器电路NMOS栅368的侧面上形成栅侧壁间隔体378。在驱动器电路PMOS晶体管354的区域上方形成n沟道源/漏（NSD）注入掩模380。NSD注入工艺382将诸如磷和砷这样的n型掺杂物注入硅衬底352中，以形成与共源共栅漏极延伸NMOS栅364上的栅侧壁间隔体378相邻的共源共栅NMOS源极区384和接近但是不相邻于共源共栅漏极延伸NMOS栅364上的栅侧壁间隔体378的共源共栅NMOS漏极接触区398，以及同时形成与驱动器电路NMOS栅368上的栅侧壁间隔体378相邻的驱动器电路NMOS NSD区386。同时形成驱动器电路NMOS NSD区386和共源共栅NMOS源极区384和共源共栅NMOS漏极接触区398可以有利地减少集成驱动器/共源共栅IC304的制造复杂度和制造成本。
图4A-图4C是耗尽型GaN FET的截面图，其以制造的连续阶段示出。参照图4A，GaN FET402具有III-N半导体材料的低缺陷层404和在低缺陷层404的上表面上形成的阻挡层406。在低缺陷层404上形成阻挡层406产生正好在阻挡层406下方的低缺陷层404中的二维电子气体，具有如1×1012到2×1013cm-2的电子密度。低缺陷层404可以包括，例如，主要为氮化镓，并具有低掺杂浓度，从而在二维电子气体中提供所需的电子迁移率。阻挡层406可以是，例如，2-30纳米的AlxGa1-xN或InxAlyGa1-x-yN。阻挡层406的示例性组分可以是24%-28%的氮化铝、62%-66%的氮化镓和8%-12%的氮化铟。可以在阻挡层406上形成可选的保护层/覆盖层408。保护层408可以是，例如2-5纳米的氮化镓。在保护层408上可以形成可选的栅介电层，图4A中未示出，以形成具有绝缘栅的GaN FET402的版本。
在阻挡层406和保护层408（如果存在）上可形成栅材料层410。在示例的一个版本中，栅材料层410可以包括金属，诸如钛、钨。在一个另选版本中，栅材料层410可以包括III-N半导体材料，诸如氮化镓或者氮化铝镓。
在栅材料层410上形成的栅蚀刻掩模412，覆盖为GaN FET402的栅极限定的区域。栅蚀刻掩模412可以包括由光刻工艺形成的50-500纳米的光刻胶。
参照图4B，由栅蚀刻掩模412暴露的图4A的栅材料层410中的栅材料在栅蚀刻工艺中被去除，以留下设置在阻挡层406上和保护层408（如果存在）上的栅极414。在栅蚀刻工艺完成之后，栅蚀刻掩模412被去除。另选地，可以使用剥离工艺（liftoff process）形成栅极414。
参照图4C，在阻挡层406中形成源极接触件416和漏极接触件418。可以形成接近低缺陷层404的源极接触件416和漏极接触件418的底表面，以形成到所述二维电子气体的隧道连接。
尽管上文已经描述了本发明的各种实施例，应理解它们仅仅是以示例描述的方式呈现而不进行限制。在不背离本发明的精神或者范围的情况下，能够对所公开的实施方式进行若干修改。因而，本发明的宽度和范围不应限制于以上描述的任何实施方式。相反，应根据以下权利要求及其等同体来限定本发明的范围。

Claims (20)

1.一种半导体器件，其包括：
耗尽型氮化镓场效应晶体管，即GaN FET；和
集成驱动器/共源共栅集成电路即共源共栅IC，其包括：
增强型共源共栅n沟道金属氧化物半导体晶体管，即增强型共源共栅NMOS晶体管；和
驱动器电路，所述驱动器电路和所述增强型共源共栅NMOS晶体管设置在同一硅衬底中；
其中：
所述GaN FET的漏极节点连接到所述半导体器件的漏端子；
所述GaN FET的源极节点连接到所述增强型共源共栅NMOS晶体管的漏极节点；
所述增强型共源共栅NMOS晶体管的栅极节点连接到所述驱动器电路；并且
所述半导体器件的栅端子连接到所述驱动器电路。
2.根据权利要求1所述的半导体器件，其中所述增强型共源共栅NMOS晶体管具有5伏的栅-源工作电压。
3.根据权利要求1所述的半导体器件，其中所述增强型共源共栅NMOS晶体管是漏极延伸NMOS晶体管。
4.根据权利要求1所述的半导体器件，其中所述驱动器电路包括驱动器缓冲器，所述驱动器缓冲器连接到所述增强型共源共栅NMOS晶体管的所述栅极节点。
5.根据权利要求1所述的半导体器件，其中所述驱动器电路包括电平转换器电路。
6.根据权利要求1所述的半导体器件，其中所述驱动器电路包括边缘检测器电路。
7.根据权利要求1所述的半导体器件，其中所述驱动器电路可操作以处理所述栅端子处具有高于10MHz频率的选通输入信号。
8.根据权利要求1所述的半导体器件，其中所述增强型共源共栅NMOS晶体管具有栅介电层，其厚度与所述驱动器电路的驱动器电路NMOS晶体管的栅介电层大致相同。
9.根据权利要求1所述的半导体器件，其中所述GaN FET的栅极包括金属。
10.根据权利要求1所述的半导体器件，其中所述GaN FET的栅极包括III-N半导体材料。
11.一种形成半导体器件的工艺，所述工艺包括以下步骤：
形成耗尽型GaN FET；
通过包括以下步骤的工艺形成集成驱动器/共源共栅IC：
提供硅衬底；
在所述硅衬底中形成增强型共源共栅NMOS晶体管；以及
在所述硅衬底中形成驱动器电路，以使所述增强型共源共栅NMOS晶体管的栅极节点连接到所述驱动器电路；
在所述GaN FET的漏极节点和所述半导体器件的漏端子之间形成电连接；
在所述GaN FET的源极节点和所述增强型共源共栅NMOS晶体管的漏极节点之间形成电连接；以及
在所述半导体器件的栅端子和所述驱动器电路之间形成电连接。
12.根据权利要求11所述的工艺，其中形成所述增强型共源共栅NMOS晶体管的所述步骤包括形成10-14纳米厚度的栅介电层。
13.根据权利要求11所述的工艺，其中形成所述增强型共源共栅NMOS晶体管的所述步骤包括在所述硅衬底中形成n型漏极延伸阱，以使所述增强型共源共栅NMOS晶体管的栅极与所述漏极延伸阱交叠。
14.根据权利要求11所述的工艺，其中形成所述驱动器电路的所述步骤包括形成驱动器缓冲器和在所述驱动器缓冲器和所述增强型共源共栅NMOS晶体管的所述栅极节点之间形成电连接。
15.根据权利要求11所述的工艺，其中形成所述驱动器电路的步骤包括形成电平转换器电路。
16.根据权利要求11所述的工艺，其中形成所述驱动器电路的所述步骤包括形成边缘检测器电路。
17.根据权利要求11所述的工艺，其中形成所述驱动器电路的所述步骤包括同时在所述增强型共源共栅NMOS晶体管中和在所述驱动器电路的驱动器电路NMOS晶体管中形成栅介电层，以使所述增强型共源共栅NMOS晶体管中的所述栅介电层与所述驱动器电路NMOS晶体管中的所述栅介电层具有大致相同的厚度。
18.根据权利要求11所述的工艺，其中形成所述驱动器电路的所述步骤包括同时在所述增强型共源共栅NMOS晶体管中形成第一n型轻掺杂漏极区域，即NLDD区域，以及在所述驱动器电路的驱动器电路NMOS晶体管中形成第二NLDD区域。
19.根据权利要求11所述的工艺，其中形成所述耗尽型GaN FET的所述步骤包括形成包括金属的栅极。
20.根据权利要求11所述的工艺，其中形成所述耗尽型GaN FET的所述步骤包括形成包括III-N半导体材料的栅极。
CN201410085283.4A 2013-03-08 2014-03-10 用于常开iii族氮化物晶体管以获得常关断功能的驱动器 Active CN104037213B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/789,949 US9093301B2 (en) 2013-03-08 2013-03-08 Driver for normally on III-nitride transistors to get normally-off functionality
US13/789,949 2013-03-08

Publications (2)

Publication Number Publication Date
CN104037213A true CN104037213A (zh) 2014-09-10
CN104037213B CN104037213B (zh) 2019-01-18

Family

ID=51467917

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410085283.4A Active CN104037213B (zh) 2013-03-08 2014-03-10 用于常开iii族氮化物晶体管以获得常关断功能的驱动器

Country Status (2)

Country Link
US (3) US9093301B2 (zh)
CN (1) CN104037213B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155903A (zh) * 2017-11-22 2018-06-12 中山大学 应用于GaN栅极驱动的高速高压电平转换电路
CN108696268A (zh) * 2018-05-24 2018-10-23 南京工程学院 一种常开型GaN FET的直接驱动电路

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160293596A1 (en) * 2015-03-30 2016-10-06 Texas Instruments Incorporated Normally off iii-nitride transistor
US10840798B1 (en) 2018-09-28 2020-11-17 Dialog Semiconductor (Uk) Limited Bidirectional signaling method for high-voltage floating circuits
US11158750B2 (en) 2019-07-03 2021-10-26 Texas Instruments Incorporated Superlattice photo detector

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080258184A1 (en) * 2004-07-08 2008-10-23 Igor Sankin Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
CN102035511A (zh) * 2010-11-02 2011-04-27 杭州士兰微电子股份有限公司 一种用于高压集成电路的延时电路
CN102769451A (zh) * 2011-05-06 2012-11-07 夏普株式会社 半导体装置及电子设备
US20120319758A1 (en) * 2011-06-17 2012-12-20 Rf Micro Devices, Inc. Bi-fet cascode power switch

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
US6960807B2 (en) * 2003-11-25 2005-11-01 Texas Instruments Incorporated Drain extend MOS transistor with improved breakdown robustness
US8084783B2 (en) * 2008-11-10 2011-12-27 International Rectifier Corporation GaN-based device cascoded with an integrated FET/Schottky diode device
US8054110B2 (en) * 2009-01-20 2011-11-08 University Of South Carolina Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs)
JP5476028B2 (ja) * 2009-04-17 2014-04-23 株式会社日立製作所 パワー半導体スイッチング素子のゲート駆動回路及びインバータ回路
US7855575B1 (en) * 2009-09-25 2010-12-21 Intel Corporation Wide voltage range level shifter with symmetrical switching
JP2012004253A (ja) * 2010-06-15 2012-01-05 Panasonic Corp 双方向スイッチ、２線式交流スイッチ、スイッチング電源回路および双方向スイッチの駆動方法
EP2693639B1 (en) * 2012-07-30 2015-09-09 Nxp B.V. Cascoded semiconductor devices
US20140070627A1 (en) * 2012-09-07 2014-03-13 International Rectifier Corporation Integrated Group III-V Power Stage
EP2736170B1 (en) * 2012-11-23 2015-06-17 Nxp B.V. Cascoded semiconductor devices
US9171837B2 (en) * 2012-12-17 2015-10-27 Nxp B.V. Cascode circuit
US9202811B2 (en) * 2012-12-18 2015-12-01 Infineon Technologies Americas Corp. Cascode circuit integration of group III-N and group IV devices
US9692408B2 (en) * 2012-12-21 2017-06-27 Gan Systems Inc. Devices and systems comprising drivers for power conversion circuits
EP2787641B1 (en) * 2013-04-05 2018-08-29 Nexperia B.V. Cascoded semiconductor devices
US9799643B2 (en) * 2013-05-23 2017-10-24 Infineon Technologies Austria Ag Gate voltage control for III-nitride transistors
US8947154B1 (en) * 2013-10-03 2015-02-03 Avogy, Inc. Method and system for operating gallium nitride electronics
KR102112299B1 (ko) * 2014-01-10 2020-05-18 삼성전자주식회사 파워 스위치 소자의 구동 방법 및 구동 회로

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080258184A1 (en) * 2004-07-08 2008-10-23 Igor Sankin Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
CN102035511A (zh) * 2010-11-02 2011-04-27 杭州士兰微电子股份有限公司 一种用于高压集成电路的延时电路
CN102769451A (zh) * 2011-05-06 2012-11-07 夏普株式会社 半导体装置及电子设备
US20120319758A1 (en) * 2011-06-17 2012-12-20 Rf Micro Devices, Inc. Bi-fet cascode power switch

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155903A (zh) * 2017-11-22 2018-06-12 中山大学 应用于GaN栅极驱动的高速高压电平转换电路
CN108155903B (zh) * 2017-11-22 2020-10-09 中山大学 应用于GaN栅极驱动的高速高压电平转换电路
CN108696268A (zh) * 2018-05-24 2018-10-23 南京工程学院 一种常开型GaN FET的直接驱动电路
CN108696268B (zh) * 2018-05-24 2021-09-24 南京工程学院 一种常开型GaN FET的直接驱动电路

Also Published As

Publication number Publication date
US20150287641A1 (en) 2015-10-08
US20140252367A1 (en) 2014-09-11
US9379022B2 (en) 2016-06-28
US20160277021A1 (en) 2016-09-22
CN104037213B (zh) 2019-01-18
US9543944B2 (en) 2017-01-10
US9093301B2 (en) 2015-07-28

Similar Documents

Publication Publication Date Title
US9633994B2 (en) BICMOS device having commonly defined gate shield in an ED-CMOS transistor and base in a bipolar transistor
US8686498B2 (en) Lateral double diffused MOS device and method for manufacturing the same
TWI572037B (zh) 電晶體裝置及其形成方法
TWI413253B (zh) 短通道低電壓、中電壓及高電壓互補金氧半導體裝置
US7709313B2 (en) High performance capacitors in planar back gates CMOS
US20110260247A1 (en) Ldmos transistors with a split gate
US10396166B2 (en) Semiconductor device capable of high-voltage operation
US8994113B2 (en) Semiconductor device and method of manufacturing a semiconductor device
US8431990B2 (en) Semiconductor device
US8674442B2 (en) Semiconductor device and manufacturing method thereof
US9508845B1 (en) LDMOS device with high-potential-biased isolation ring
US20170263761A1 (en) Semiconductor device capable of high-voltage operation
US8912569B2 (en) Hybrid transistor
US20160351699A1 (en) Field-effect transistors with body dropdowns
CN104037213A (zh) 用于常开iii族氮化物晶体管以获得常关断功能的驱动器
US20090159968A1 (en) BVDII Enhancement with a Cascode DMOS
US7573098B2 (en) Transistors fabricated using a reduced cost CMOS process
US20220367682A1 (en) Semiconductor device and manufacturing method therefor
US8610183B2 (en) Field controlled diode with positively biased gate
KR20090070513A (ko) 반도체 소자 및 그 제조방법
US9583564B2 (en) Isolation structure
US8476705B2 (en) High voltage semiconductor device
CN107180856B (zh) 一种pmos器件结构
TW515048B (en) Asymmetric high voltage metal-oxide-semiconductor device
US9647060B2 (en) Isolation structure and method for fabricating the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant