CN104008991A - 转移半导体元件的方法和制造柔性半导体器件的方法 - Google Patents

转移半导体元件的方法和制造柔性半导体器件的方法 Download PDF

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CN104008991A
CN104008991A CN201310415442.8A CN201310415442A CN104008991A CN 104008991 A CN104008991 A CN 104008991A CN 201310415442 A CN201310415442 A CN 201310415442A CN 104008991 A CN104008991 A CN 104008991A
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semiconductor element
resin bed
vertical semiconductor
layer
substrate
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CN104008991B (zh
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赵恩亨
崔濬熙
孙镇升
文彰烈
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Samsung Electronics Co Ltd
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Abstract

本发明提供了一种转移半导体元件的方法，其用于将形成在非柔性衬底上的半导体元件转移到柔性衬底。此外，本发明还提供了基于转移半导体元件的方法来制造柔性半导体器件的方法。生长或形成在衬底上的半导体元件可以在保持布置的同时有效地转移到树脂层。树脂层用作支撑竖直半导体元件的柔性衬底。

Description

转移半导体元件的方法和制造柔性半导体器件的方法
技术领域
本公开涉及半导体器件和制造半导体器件的方法，更具体地，涉及转移半导体元件的方法。
背景技术
利用半导体材料的光电特性的光电子器件是各种半导体器件的一个示例。光电子器件包括将电能转变成光能的器件和将光能转变成电能的器件。将电能转变成光能的器件的示例包括发光器件或光发射器件，诸如发光二极管（LED）和激光二极管（LD）。将光能转变成电能的器件的示例包括光电器件，诸如太阳能电池和光电二极管。
基于无机半导体的光电子器件，更具体地，氮化物半导体基发光器件，具有诸如高效率、高亮度和长寿命的各种优点。然而，为了制造氮化物半导体基发光器件，单晶氮化物层需要外延生长在诸如蓝宝石衬底或硅衬底的非柔性衬底上。
然而，非柔性衬底制造非柔性半导体器件，其难以在形态上转变，并且不利于成本降低和制造具有大表面积的半导体器件。因此，需要在柔性衬底上具有无机半导体元件的柔性半导体器件以及制造该柔性半导体器件的方法。
发明内容
本发明提供了将形成在非柔性衬底上的半导体元件转移到柔性衬底的方法，
本发明提供了基于转移半导体元件的方法来制造柔性半导体器件的方法。
额外方面将在随后的描述中部分地阐述，并且从该描述而部分地变明显，或者可以通过实践给出的实施方式而习之。
根据本发明的方面，提供了一种转移半导体元件的方法，其包括：
在衬底上形成竖直半导体元件；在竖直半导体元件的表面上形成无机绝缘层，以及将OH基引入到无机绝缘层的表面；
在无机绝缘层的该表面上形成两亲性层；
在涂有两亲性层的竖直半导体元件上涂覆可聚合混合物；
固化可聚合混合物并且将可聚合混合物转变为第一树脂层，由此将竖直半导体元件嵌入第一树脂层中；以及
将第一树脂层和竖直半导体元件一起从衬底分离。
根据本发明的另一方面，提供了一种制造柔性半导体器件的方法，其包括：
制备柔性叠层，该柔性叠层包括：第一树脂层；嵌入第一树脂层中的竖直半导体元件，其中竖直半导体元件的顶部在第一树脂层上方被暴露，竖直半导体元件的底部在第一树脂层下面被暴露；以及，可选地，设置在竖直半导体元件下面的掩模层、缓冲层和下层中的至少一个；
在柔性叠层的顶部上形成顶电极，该顶电极电连接到竖直半导体元件；以及
在柔性叠层的底部上形成底电极，该底电极电连接到竖直半导体元件。
根据本发明的另一方面，提供了一种制造柔性半导体器件的方法，其包括：
制备柔性叠层，该柔性叠层包括：第一树脂层；嵌入第一树脂层中的竖直半导体元件，其中竖直半导体元件的顶部在第一树脂层的上方被暴露，竖直半导体元件的底部在第一树脂层下面被暴露；形成在竖直半导体元件上的顶电极层；形成在顶电极层上的第二树脂层；以及，可选地，形成在竖直半导体元件下面的掩模层、缓冲层和下层中的至少一个；以及
在柔性叠层的底部上形成底电极，该底电极电连接到竖直半导体元件。
附图说明
通过以下结合附图对实施方式的描述，这些和/或其他方面将变得明显并且更易于理解，在附图中：
图1A至图1F为截面图，示出根据本公开第一实施方式的转移半导体元件的方法；
图2示出半导体元件，该半导体元件的顶部由于第一树脂层的蚀刻而被暴露；
图3示出形成在竖直半导体元件上的顶电极层，该竖直半导体元件的顶部被暴露；
图4示出形成在顶电极层上的第二树脂层；
图5示出形成在第二树脂层上的支撑层；
图6示出在去除衬底和支撑层之后的第二树脂层和第一树脂层；以及
图7为示出不同类型的键（bond）和用于打破该键的相应波长之间的关系的图形。
具体实施方式
现将详细参考实施方式，附图中示出了实施方式的实例，其中通篇相同的附图标记指示相同的元件。在这方面，本实施方式可以具有不同的形式并且不应被解释为限于在此阐述的描述。因此，下文仅通过参考附图描述了实施方式，以解释本说明书的方面。如在此使用，术语"和/或"包括相关列举项目的一个或更多的任何和所有组合。诸如“…中的至少一个”的表述，当在一列元件之前时，其修饰整个列的元件而不修饰该列中的单个元件。
在下文，将参考图1A至图1F详细描述根据本公开第一实施方式的转移半导体元件的方法。图1A至图1F为截面图，示出根据本公开第一实施方式的转移半导体元件的方法。
图1A示出形成在衬底100上的竖直半导体元件200。衬底100可以是晶体或非晶衬底。例如，衬底100可以是晶体衬底，诸如蓝宝石衬底和硅衬底。另外，衬底100可以是非晶衬底，诸如玻璃。由于竖直半导体元件200的生长通常在大约560℃至大约1040℃的温度范围内执行，所以期望的是衬底100在上述温度范围内是稳定的。
衬底100的表面可被从下层110、缓冲层120和掩模层130中选出的至少一个涂覆。这些层可控制或促进竖直半导体元件200的生长。此外，竖直半导体元件200可直接生长在衬底100的表面上。
下层110可以是例如金属层。更具体地，下层110可包括例如钛（Ti）、铪（Hf）、锆（Zr）和铝（Al）中的至少一个。与未涂有下层110的衬底100相比，涂有下层110的衬底100上可更容易地形成缓冲层120。
缓冲层120可以是例如III-V族化合物半导体。更具体地，缓冲层120可以是例如GaN基半导体、AIN基半导体或其混合物。更具体地，缓冲层120可包括例如GaN、AlN、InGaN、AlGaN和AlInGaN中的至少一个。缓冲层120可以是单层。备选地，缓冲层120可以是例如多层，诸如双层和三层。缓冲层120可在大约450℃至大约650℃之间的低温下形成。例如，当在上述范围内的低温下用GaN形成缓冲层120时，缓冲层120可称为低温（LT）-GaN层。此外，当在上述范围内的低温下用AlN形成缓冲层120时，缓冲层120可称为低温（LT）-AlN层。当缓冲层120形成在下层110的表面上时，由于下层110的优选取向，因此缓冲层120可以在关于下层110的表面的竖直方向上具有优选取向。缓冲层120可以被图案化或未图案化。竖直半导体元件200的布置图案可以根据缓冲层120的图案来确定。当缓冲层120已经被图案化时，可以不需要掩模层130。
掩模层130可以是例如硅氧化物、硅氮化物或其混合物。掩模层130具有暴露出缓冲层120的至少一个开口。开口可以具有例如孔的形状。开口的直径可以是例如大约几nm至大约几μm。掩模层130可以具有单层或多层结构。掩模层130的厚度可以为例如大约10nm至大约500nm，更具体地，大约10nm至大约200nm。掩模层130的厚度与衬底和生长在其上的半导体元件之间的接合强度有关。当掩模层130的厚度太薄时，接合强度会过度减小，当厚度太厚时，接合强度会过度增大。因此，为了将半导体元件容易地转移到另一个衬底，掩模层130可优选地选择容易转移的适当厚度。竖直半导体元件200的布置图案可以根据掩模层130的开口的布置而确定。
竖直半导体元件200可以例如生长在缓冲层120的通过掩模层130的开口被暴露的区域上。如在此使用的术语“竖直半导体元件”是指在关于衬底的表面的竖直方向上具有厚度的半导体元件。纵截面或横截面的形状可以是任何形状。例如，竖直半导体元件200可以具有例如棱锥形状、杆形状或其类似形状。竖直半导体元件200可以是在竖直方向上的单层结构或在竖直方向上的多层结构。竖直半导体元件200可以具有例如III-V族化合物半导体。更具体地，竖直半导体元件200可以是例如GaN基半导体。GaN基半导体可包括例如GaN、InGaN、AlGaN和AlInGaN中的至少一个。至少一些竖直半导体元件200可以例如在大约900℃至大约1100℃的范围内的高温下形成。例如，当一些竖直半导体元件200在这样的高温下用GaN形成时，GaN可以被称为高温（HT）-GaN。至少一些竖直半导体元件200可包括HT-GaN或基于HT-GaN的材料。因为竖直半导体元件200从缓冲层120的表面生长，所以竖直半导体元件200也可以在竖直方向上具有优选取向。竖直半导体元件200可以具有优良的结晶性。
通过例如原子层沉积、化学气相沉积、溅射等，可以执行在衬底100上形成下层110、缓冲层120、掩模层130或竖直半导体元件200。
图1B示出形成在竖直半导体元件200的表面上的无机绝缘层210。无机绝缘层210可以是例如SiO2、Si3N4或者其组合。通过例如原子层沉积、化学气相沉积、溅射等，可以执行形成无机绝缘层210。在形成无机绝缘层210之后，通过用等离子体或强酸处理无机绝缘层210可将足够量的-OH基引入到无机绝缘层210的表面。通过使用例如典型的O2等离子体工艺可以执行等离子体处理。通过使用例如以下的方法可以执行强酸处理，该方法包括：在70℃的温度下将衬底浸入硫酸和过氧化氢以7:3的比率混合的溶液中30分钟；用去离子水清洗衬底；以及在100℃的温度下在烘箱中干燥衬底。
图1C示出形成在无机绝缘层210的表面上的两亲性层（amphipathiclayer）300，该无机绝缘层210形成在竖直半导体元件200的表面上。两亲性层300由两亲性材料形成或包括两亲性材料。两亲性材料是指具有易水解基团和有机官能团两者的材料。易水解基团可以是例如甲氧基甲硅烷基团、烷氧基团、酰氧基团、卤素原子、胺基团或者其组合。有机官能团可以是例如环氧基团。具有易水解基团和有机官能团的两亲性材料可以是例如硅烷偶联剂。硅烷偶联剂可以是例如3-缩水甘油醚基丙基三甲氧基硅烷（3-GPTS）。3-GPTS具有作为易水解基团的甲氧基甲硅烷基团和作为有机官能团的环氧基团。两亲性层300可通过例如在竖直半导体元件200的表面上涂覆包括两亲性材料的溶液并且去除溶剂而形成。当3-GPTS被用作两亲性材料时，异丙醇可被用作溶剂，3-GPTS的含量可以为大约5wt%。通过例如旋涂或喷涂可以执行涂覆包括两亲性材料的溶液。两亲性层300的易水解基团可通过水解缩合反应键合到无机绝缘层210的表面上的OH基。因此，两亲性层300和无机绝缘层210可以牢固地彼此接合。
图1D示出涂覆在竖直半导体元件200上的可聚合混合物层400，该竖直半导体元件200涂有无机绝缘层210和两亲性层300。可聚合混合物可以是例如包括可聚合单体、活性稀释剂以及引发剂的混合物。这里，可聚合单体包括可聚合的单体、可聚合的低聚体、可聚合的大分子单体等。可聚合单体可以是例如聚氨酯丙烯酸酯、环氧丙烯酸酯或者其组合。活性稀释剂可以是例如2-羟丙基-丙烯酸酯（2-HPA）、三羟甲基丙烷三丙烯酸酯、聚酯基丙烯酸单体或者其组合。引发剂可以是例如热引发剂、光引发剂或者其组合。光引发剂可以是1-羟基环己基苯基甲酮、氧基-苯基-乙酸1-甲基-2-[2-(2-氧基-2-苯基-乙酰氧基)-丙氧基]-乙酯（oxo-phenyl-acetic acid1-methyl-2-[2-(2-oxo-2-phenyl-acetoxy)-propoxy]-ethyl ester）或者其组合。可聚合混合物的可聚合单体的含量可以是例如大约50wt%至大约80wt%。可聚合混合物的活性稀释剂的含量可以是例如大约20wt%至大约40wt%。可聚合混合物的光引发剂的含量可以是例如大约3wt%至大约5wt%。可聚合混合物可以在市场上获得。市场上可获得的可聚合混合物的示例是TSV（包括聚氨酯丙烯酸酯、2-HPA和1-羟基环己基苯基甲酮的UV可固化的可聚合混合物，从韩国Minuta Tech可获得）等。通过例如旋涂、喷涂等可以执行涂覆可聚合混合物。
图1E示出通过固化可聚合混合物层400将涂覆的可聚合混合物层400转变成第一树脂层450而嵌入到第一树脂层450中的竖直半导体元件200。通过例如施加热或光到可聚合混合物层400可以执行固化可聚合混合物层400。当可聚合混合物层400包括热引发剂时，通过施加热到可聚合混合物层400可以固化可聚合混合物层400。当可聚合混合物层400包括光引发剂时，通过施加光（例如，UV射线，更具体地，具有大约365nm的波长的UV射线）到可聚合混合物层400可以固化可聚合混合物层400。热固化的温度或光固化的波长可根据使用的热引发剂或使用的光引发剂而改变。在固化工艺期间，发生了可聚合混合物的可聚合单体的聚合反应，并且发生可聚合混合物的可聚合单体与两亲性层300的有机官能团之间的键合。因此，固化的第一树脂层450和竖直半导体元件200通过将无机绝缘层210和两亲性层300作为媒介而牢固地彼此接合。固化的第一树脂层450与竖直半导体元件200之间的接合强度比衬底100与竖直半导体元件200之间的接合强度更强。固化的第一树脂层450与竖直半导体元件200之间的接合强度比衬底100与下层110之间的接合强度更强。固化的第一树脂层450与竖直半导体元件200之间的接合强度比衬底100与缓冲层120之间的接合强度更强。
图1F示出将第一树脂层450和竖直半导体元件200一起从衬底100分离。当第一树脂层450从衬底100剥离时，由于固化的第一树脂层450与竖直半导体元件200之间的强接合强度，所以半导体元件200因为嵌入到第一树脂层450中而从衬底100分离。当下层110、缓冲层120和/或掩模层130形成在竖直半导体元件200和衬底100之间时，下层110、缓冲层120和/或掩模层130由于耦接到竖直半导体元件200而可以从衬底100分离。
通过在图1A至图1F中示出的一系列工艺，生长或形成在衬底上的竖直半导体元件200可以非常有效地转移到第一树脂层450，同时保持它们的布置。此外，第一树脂层450用作支撑竖直半导体元件200的柔性衬底。
根据本公开第二实施方式的转移半导体元件的方法还包括通过蚀刻第一树脂层450的顶部暴露出竖直半导体元件200的顶部。图2示出竖直半导体元件200，该竖直半导体元件200的顶部由于第一树脂层450的蚀刻而被暴露。通过利用例如包括CF4和O2的蚀刻气体可以执行第一树脂层450的蚀刻。通过蚀刻第一树脂层450，竖直半导体元件200的顶部可以暴露于外部。例如，暴露于第一树脂层450的外部的顶部可以具有每个竖直半导体元件200的整个竖直长度的大约1/5至大约1/2的长度。在另一实施方式中，在将第一树脂层450和竖直半导体元件200一起从衬底100分离之前，可以执行通过蚀刻第一树脂层450而暴露出竖直半导体元件200的顶部。此外，在另一实施方式中，在将竖直半导体元件200和第一树脂层450一起从衬底100分离之后，可以执行通过蚀刻第一树脂层450而暴露出竖直半导体元件200的顶部。
根据本公开第三实施方式的转移半导体元件的方法还包括在其顶部被暴露的竖直半导体元件上形成顶电极层。图3示出形成在竖直半导体元件200上的顶电极层600，竖直半导体元件200的顶部被暴露。顶电极层600可以是透明电极或不透明电极。透明电极可以由例如石墨烯或透明导电氧化物（TCO）诸如铟锡氧化物（ITO）形成。不透明电极可以由例如金（Au）、钯（Pd）、铝（Al）、铂（Pt）、银（Ag）、钛（Ti）或其混合物形成。
根据本公开第四实施方式的转移半导体元件的方法还包括在顶电极层上形成第二树脂层。图4示出形成在顶电极层600上的第二树脂层700。第二树脂层700可以通过例如在顶电极层600上涂覆可聚合混合物以及固化该可聚合混合物而形成。可聚合混合物与上文关于第一树脂层450的形成所述的相同。第二树脂层700可以与第一树脂层450相同或不同。根据另一实施方式，在顶电极层上涂覆可聚合混合物之前，无机绝缘层和/或两亲性层可以形成在顶电极层上。此外，OH基可以被引入到无机绝缘层的表面。无机绝缘层和两亲性层与上文关于第一树脂层450的形成所述的相同。
根据本公开第五实施方式的转移半导体元件的方法还包括在第二树脂层上形成支撑层。图5示出形成在第二树脂层700上的支撑层500。例如，支撑层500可以附接于固化的第二树脂层700。根据另一实施方式，支撑层500可以通过在顶电极层600上涂覆可聚合混合物、将支撑层500挤压在涂覆的可聚合混合物上、以及固化该涂覆的可聚合混合物而形成。支撑层500可以是例如聚对苯二甲酸乙二醇酯膜、聚碳酸酯膜等。
根据另一实施方式，支撑层500的接触用于第二树脂层700的可聚合混合物的一个表面可以涂有增粘剂。增粘剂可增大第二树脂层700与支撑层500之间的接合强度。增粘剂可以根据用于支撑层和第二树脂层的材料而适当地选择。根据另一实施方式，支撑层的接触用于第二树脂层700的可聚合混合物的一个表面可以涂有防粘剂。防粘剂防止第二树脂层700和支撑层500之间的过度粘着，以促进后续的第二树脂层700和支撑层500的分离。防粘剂可以根据用于支撑层500和树脂层700的材料而适当地选择。防粘剂可以是例如聚氨酯丙烯酸树脂等。
第二树脂层700与支撑层500之间的接合强度比衬底100与半导体元件200之间的接合强度更强。第二树脂层700与支撑层500之间的接合强度比衬底100与下层110之间的接合强度更强。树脂层700与支撑层500之间的接合强度比衬底100与缓冲层120之间的接合强度更强。
支撑层500与第二树脂层700之间的接合强度、第二树脂层700与第一树脂层450之间的接合强度、第一树脂层450与竖直半导体元件200之间的接合强度等比竖直半导体元件200与衬底100之间的接合强度更强；因此，当支撑层500从衬底剥离时，竖直半导体元件200、第一树脂层450和第二树脂层700也从衬底100分离，同时被支撑层500支撑。当下层110、缓冲层120和/或掩模层130形成在半导体元件200和衬底100之间时，下层110、缓冲层120和/或掩模层130也可以在与竖直半导体元件200接合的同时从衬底100分离。由于第二树脂层700和第一树脂层450的机械强度通过支撑层500的支撑而被加强，因此第二树脂层700和第一树脂层450可以在这些层从衬底100分离时防止被损坏。因此，使用支撑层500在制造大面积的半导体器件时尤其有利。
根据本公开第六实施方式的转移半导体元件的方法还包括在将第一树脂层和竖直半导体元件一起从衬底分离之后去除支撑层。图6示出在去除衬底100和支撑层500之后的第二树脂层700和第一树脂层450。
通过例如蚀刻可以执行去除支撑层500。通过例如利用包括CF4和O2的蚀刻气体可以执行蚀刻支撑层500。通过例如光分解工艺打破支撑层500与第二树脂层700之间的键可以执行去除支撑层500。更具体而言，例如，从衬底100分离的包括支撑层500、第二树脂层700、第一树脂层450和竖直半导体元件200的叠层被放置在虚设衬底上，然后，通过施加具有用于打破分子键的波长的光到支撑层500，打破支撑层500与第二树脂层700之间的键。因而，支撑层500和第二树脂层700之间的粘着力变得比虚设衬底与竖直半导体元件200之间的粘着力更弱。因此，通过剥离支撑层500而可以容易地去除支撑层500。用于打破分子键的波长可以是与各种类型的键的键能相应的波长。各种类型的键和用于打破与该键相应的分子键的波长在图7中示出。例如，通过使用大约172nm的波长，可以打破具有不大于C=C键的键能的大部分化学键。
根据本公开的另一方面的制造柔性半导体器件的方法包括：
制备柔性叠层，该柔性叠层包括：第一树脂层；嵌入第一树脂层中的竖直半导体元件，其中竖直半导体元件的顶部在第一树脂层上方被暴露，竖直半导体元件的底部在第一树脂层下面被暴露；以及，可选地，设置在竖直半导体元件下面的掩模层、缓冲层和下层中的至少一个；
在柔性叠层的顶部上形成顶电极，该顶电极电连接到竖直半导体元件；以及
在柔性叠层的底部上形成底电极，该底电极电连接到竖直半导体元件。
根据上文所述的转移半导体元件的方法的实施方式可以制备柔性叠层，该柔性叠层包括：第一树脂层；嵌入第一树脂层中的竖直半导体元件，其中竖直半导体元件的顶部在第一树脂层上方被暴露，竖直半导体元件的底部在第一树脂层下面被暴露；以及，可选地，设置在竖直半导体元件下面的掩模层、缓冲层和下层中的至少一个。
顶电极以及底电极中的至少一个可以是透明电极。顶电极和底电极两个可以是透明电极。透明电极可以由例如石墨烯或透明导电氧化物（TCO）诸如铟锡氧化物（ITO）形成。顶电极和底电极中的一个可以是透明电极，另一个可以是不透明电极。不透明电极可以由例如金（Au）、钯（Pd）、铝（Al）、铂（Pt）、银（Ag）、钛（Ti）或者其组合形成。然而，这里详细描述的用于顶电极和底电极的材料仅为说明性的目的，各种其他的材料可以被用作用于顶电极和底电极的材料。
根据本公开的另一方面的制造柔性半导体器件的方法包括：
制备柔性叠层，该柔性叠层包括：第一树脂层；嵌入第一树脂层中的竖直半导体元件，其中竖直半导体元件的顶部在第一树脂层的上方被暴露，竖直半导体元件的底部在第一树脂层下面被暴露；形成在竖直半导体元件上的顶电极；形成在顶电极上的第二树脂层；以及可选地，设置在竖直半导体元件下面的掩模层、缓冲层和下层中的至少一个；以及
在柔性叠层的底部上形成底电极，该底电极电连接到竖直半导体元件。
根据上文所述的转移半导体元件的方法的实施方式可以制备柔性叠层，该柔性叠层包括：第一树脂层；嵌入第一树脂层中的竖直半导体元件，其中竖直半导体元件的顶部在第一树脂层上方被暴露，竖直半导体元件的底部在第一树脂层下面被暴露；形成在竖直半导体元件上的顶电极层；形成在顶电极层上的第二树脂层；以及可选地，设置在竖直半导体元件下面的掩模层、缓冲层和下层中的至少一个。
顶电极和底电极中的至少一个可以是透明电极。顶电极和底电极两个可以是透明电极。透明电极可以由例如石墨烯或透明导电氧化物（TCO）诸如铟锡氧化物（ITO）形成。顶电极和底电极中的一个可以是透明电极，另一个可以是不透明电极。不透明电极可以由例如金（Au）、钯（Pd）、铝（Al）、铂（Pt）、银（Ag）、钛（Ti）或者其组合形成。然而，这里详细描述的用于顶电极和底电极的材料仅为说明性的目的，各种其他的材料可以被用作用于顶电极和底电极的材料。
本公开提供将形成在非柔性衬底上的半导体元件转移到柔性衬底的方法。本公开提供基于转移半导体元件的方法来制造半导体器件的方法。
应当理解，此处描述的示范性实施方式应该仅以描述性涵义理解，而不为了限制的目的。对于每个实施方式中的特征或方面的描述应该典型地被认为可适用于其他实施方式中的其他相似特征或方面。
本申请要求于2013年2月27日向韩国知识产权局提交的韩国专利申请No.10-2013-0021383的优先权，其公开通过参考整体合并于此。

Claims (20)

1.一种转移半导体元件的方法，包括：
在衬底上形成竖直半导体元件；
在所述竖直半导体元件的表面上形成无机绝缘层，并且将OH基引入到所述无机绝缘层的表面；
在所述无机绝缘层的所述表面上形成两亲性层；
在涂有所述两亲性层的所述竖直半导体元件上涂覆可聚合混合物；
固化所述可聚合混合物并且将所述可聚合混合物转变为第一树脂层，由此将所述竖直半导体元件嵌入所述第一树脂层中；以及
将所述第一树脂层和所述竖直半导体元件一起从所述衬底分离。
2.如权利要求1所述的方法，其中所述衬底的表面被下层、缓冲层和掩模层中的至少一个涂覆。
3.如权利要求2所述的方法，其中，所述缓冲层被图案化。
4.如权利要求2所述的方法，其中所述掩模层的厚度为大约10nm至大约500nm。
5.如权利要求1所述的方法，其中所述竖直半导体元件为GaN基半导体。
6.如权利要求1所述的方法，其中所述无机绝缘层为SiO2。
7.如权利要求1所述的方法，其中所述无机绝缘层被用等离子体或强酸处理。
8.如权利要求1所述的方法，其中所述两亲性层包括甲氧基甲硅烷基团、烷氧基团、酰氧基团、卤素原子、胺基团或者其组合作为易水解基团。
9.如权利要求1所述的方法，其中所述两亲性层具有环氧基团作为有机官能团。
10.如权利要求1所述的方法，其中所述可聚合混合物包括可聚合单体、活性稀释剂以及引发剂。
11.如权利要求1所述的方法，其中在将所述第一树脂层和所述竖直半导体元件一起从所述衬底分离之前，执行通过蚀刻所述第一树脂层而暴露出所述竖直半导体元件的顶部。
12.如权利要求11所述的方法，还包括在其顶部被暴露的所述竖直半导体元件上形成顶电极层。
13.如权利要求12所述的方法，还包括在所述顶电极层上形成第二树脂层。
14.如权利要求13所述的方法，还包括在所述第二树脂层上形成支撑层。
15.如权利要求14所述的方法，其中所述支撑层的接触所述第二树脂层的一个表面涂覆有增粘剂。
16.如权利要求14所述的方法，其中所述支撑层的接触所述第二树脂层的一个表面涂覆有防粘剂。
17.如权利要求14所述的方法，还包括在将所述第一树脂层和所述竖直半导体元件一起从所述衬底分离之后，去除所述支撑层。
18.如权利要求17所述的方法，其中去除所述支撑层包括通过光分解工艺打破所述支撑层与所述第二树脂层之间的键。
19.一种制造柔性半导体器件的方法，包括：
制备柔性叠层，该柔性叠层包括：第一树脂层；嵌入所述第一树脂层中的竖直半导体元件，其中所述竖直半导体元件的顶部在所述第一树脂层上方被暴露，所述竖直半导体元件的底部在所述第一树脂层下面被暴露；以及设置在所述竖直半导体元件下面的掩模层、缓冲层和下层中的至少一个；
在所述柔性叠层的顶部上形成顶电极，该顶电极电连接到所述竖直半导体元件；以及
在所述柔性叠层的底部上形成底电极，该底电极电连接到所述竖直半导体元件。
20.一种制造柔性半导体器件的方法，包括：
制备柔性叠层，该柔性叠层包括：第一树脂层；嵌入所述第一树脂层中的竖直半导体元件，其中所述竖直半导体元件的顶部在所述第一树脂层的上方被暴露，所述竖直半导体元件的底部在所述第一树脂层下面被暴露；形成在所述竖直半导体元件上的顶电极层；形成在所述顶电极层上的第二树脂层；以及形成在所述竖直半导体元件下面的掩模层、缓冲层和下层中的至少一个；以及
在所述柔性叠层的底部上形成底电极，该底电极电连接到所述竖直半导体元件。
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