CN103999218B - 非易失性存储元件、非易失性存储装置、非易失性存储元件的制造方法及非易失性存储装置的制造方法 - Google Patents
非易失性存储元件、非易失性存储装置、非易失性存储元件的制造方法及非易失性存储装置的制造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 239000010410 layer Substances 0.000 claims abstract description 271
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 248
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 244
- 239000001301 oxygen Substances 0.000 claims abstract description 94
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical group O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 94
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 94
- 239000011241 protective layer Substances 0.000 claims abstract description 75
- 230000015654 memory Effects 0.000 claims description 68
- 239000011229 interlayer Substances 0.000 claims description 61
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 238000007254 oxidation reaction Methods 0.000 claims description 45
- 230000003647 oxidation Effects 0.000 claims description 44
- 239000000203 mixture Substances 0.000 claims description 26
- PBCFLUZVCVVTBY-UHFFFAOYSA-N Tantalum pentoxide Chemical compound O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 19
- 238000005755 formation reaction Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 230000005611 electricity Effects 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 150000001875 compounds Chemical group 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N Hafnium Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 239000002365 multiple layer Substances 0.000 claims description 3
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims description 2
- CNRZQDQNVUKEJG-UHFFFAOYSA-N oxo-bis(oxoalumanyloxy)titanium Chemical compound O=[Al]O[Ti](=O)O[Al]=O CNRZQDQNVUKEJG-UHFFFAOYSA-N 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 76
- 210000004027 cells Anatomy 0.000 description 39
- 238000000034 method Methods 0.000 description 27
- 230000015556 catabolic process Effects 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 23
- 238000007792 addition Methods 0.000 description 20
- 230000000875 corresponding Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- 229910052715 tantalum Inorganic materials 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 12
- MZLGASXMSKOWSE-UHFFFAOYSA-N Tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 210000002381 Plasma Anatomy 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000006479 redox reaction Methods 0.000 description 8
- 230000001629 suppression Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- GEIAQOFPUVMAGM-UHFFFAOYSA-N oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 230000001603 reducing Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 229910004158 TaO Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000006399 behavior Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- -1 metal-oxide Compound Chemical class 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910000314 transition metal oxide Inorganic materials 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 230000003019 stabilising Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N Hafnium(IV) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 229910004140 HfO Inorganic materials 0.000 description 2
- 101700000942 M231 Proteins 0.000 description 2
- 101700001005 M232 Proteins 0.000 description 2
- 101700003801 M233 Proteins 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atoms Chemical group 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000881 depressing Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 230000001965 increased Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000002372 labelling Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000001590 oxidative Effects 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000003334 potential Effects 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 210000001367 Arteries Anatomy 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 210000003462 Veins Anatomy 0.000 description 1
- UOTBHSCPQOFPDJ-UHFFFAOYSA-N [Hf]=O Chemical compound [Hf]=O UOTBHSCPQOFPDJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003071 parasitic Effects 0.000 description 1
- 230000002093 peripheral Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 201000010874 syndrome Diseases 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011203804 | 2011-09-16 | ||
JP2011-203804 | 2011-09-16 | ||
PCT/JP2012/005727 WO2013038647A1 (ja) | 2011-09-16 | 2012-09-10 | 不揮発性記憶素子、不揮発性記憶装置、不揮発性記憶素子の製造方法、及び不揮発性記憶装置の製造方法 |
Publications (2)
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CN103999218A CN103999218A (zh) | 2014-08-20 |
CN103999218B true CN103999218B (zh) | 2016-11-30 |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102047423A (zh) * | 2009-04-30 | 2011-05-04 | 松下电器产业株式会社 | 非易失性存储元件及非易失性存储装置 |
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102047423A (zh) * | 2009-04-30 | 2011-05-04 | 松下电器产业株式会社 | 非易失性存储元件及非易失性存储装置 |
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Effective date of registration: 20160219 Address after: Osaka Japan Applicant after: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co.,Ltd. Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. |
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Effective date of registration: 20200601 Address after: Kyoto Japan Patentee after: Panasonic semiconductor solutions Co.,Ltd. Address before: Osaka Japan Patentee before: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co.,Ltd. |