CN103999215B - 用于微电子管芯、含有微电子管芯的微电子组件、微电子系统的封装，以及降低微电子封装中的管芯应力的方法 - Google Patents

用于微电子管芯、含有微电子管芯的微电子组件、微电子系统的封装，以及降低微电子封装中的管芯应力的方法 Download PDF

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CN103999215B
CN103999215B CN201180075511.4A CN201180075511A CN103999215B CN 103999215 B CN103999215 B CN 103999215B CN 201180075511 A CN201180075511 A CN 201180075511A CN 103999215 B CN103999215 B CN 103999215B
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substrate
contact
heat sink
die
contact area
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Chinese (zh)
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CN103999215A (zh
Inventor
D·马利克
S·纳拉辛汉
M·J·曼努沙洛
T·A·博伊德
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Intel Corp
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Intel Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Combinations Of Printed Boards (AREA)
CN201180075511.4A 2011-12-16 2011-12-16 用于微电子管芯、含有微电子管芯的微电子组件、微电子系统的封装，以及降低微电子封装中的管芯应力的方法 Active CN103999215B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2011/065512 WO2013089780A1 (en) 2011-12-16 2011-12-16 Package for a microelectronic die, microelectronic assembly containing same, microelectronic system, and method of reducing die stress in a microelectronic package

Publications (2)

Publication Number Publication Date
CN103999215A CN103999215A (zh) 2014-08-20
CN103999215B true CN103999215B (zh) 2017-06-13

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CN201180075511.4A Active CN103999215B (zh) 2011-12-16 2011-12-16 用于微电子管芯、含有微电子管芯的微电子组件、微电子系统的封装，以及降低微电子封装中的管芯应力的方法

Country Status (5)

Country Link
US (1) US9478476B2 (enExample)
KR (1) KR101584471B1 (enExample)
CN (1) CN103999215B (enExample)
IN (1) IN2014CN03370A (enExample)
WO (1) WO2013089780A1 (enExample)

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CN103999215B (zh) 2011-12-16 2017-06-13 英特尔公司 用于微电子管芯、含有微电子管芯的微电子组件、微电子系统的封装，以及降低微电子封装中的管芯应力的方法
KR101983142B1 (ko) * 2013-06-28 2019-08-28 삼성전기주식회사 반도체 패키지
FR3012670A1 (fr) * 2013-10-30 2015-05-01 St Microelectronics Grenoble 2 Systeme electronique comprenant des dispositifs electroniques empiles munis de puces de circuits integres
KR20150072846A (ko) * 2013-12-20 2015-06-30 삼성전기주식회사 반도체 패키지 모듈
US9892990B1 (en) * 2014-07-24 2018-02-13 Amkor Technology, Inc. Semiconductor package lid thermal interface material standoffs
KR101753181B1 (ko) 2014-12-20 2017-07-03 인텔 코포레이션 소켓 어셈블리용 땜납 콘택트
JP2016225413A (ja) * 2015-05-28 2016-12-28 株式会社ジェイテクト 半導体モジュール
WO2018125254A1 (en) * 2016-12-31 2018-07-05 Intel Corporation Electronic device package
US9899305B1 (en) * 2017-04-28 2018-02-20 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package structure
US10424527B2 (en) * 2017-11-14 2019-09-24 International Business Machines Corporation Electronic package with tapered pedestal
EP3693991B1 (en) * 2019-02-08 2024-04-03 Marvell Asia Pte, Ltd. Heat sink design for flip chip ball grid array
US11195779B2 (en) * 2019-08-09 2021-12-07 Raytheon Company Electronic module for motherboard
US11948855B1 (en) 2019-09-27 2024-04-02 Rockwell Collins, Inc. Integrated circuit (IC) package with cantilever multi-chip module (MCM) heat spreader
US11158596B2 (en) 2020-03-20 2021-10-26 Advanced Semiconductor Engineering, Inc. Semiconductor device package comprising power module and passive elements
JP7528557B2 (ja) * 2020-06-19 2024-08-06 日本電気株式会社 量子デバイス及びその製造方法
US12183650B2 (en) 2020-12-22 2024-12-31 Intel Corporation Heat extraction path from a laser die using a highly conductive thermal interface material in an optical transceiver
US12061371B2 (en) * 2020-12-22 2024-08-13 Intel Corporation Patch on interposer architecture for low cost optical co-packaging
US20220291462A1 (en) * 2021-03-11 2022-09-15 Intel Corporation Method to couple light using integrated heat spreader
US12362245B2 (en) * 2021-07-15 2025-07-15 Taiwan Semiconductor Manufacturing Company Limited Package assembly including a package lid having an inner foot and methods of making the same
CN114823549B (zh) * 2022-06-27 2022-11-11 北京升宇科技有限公司 一种纵向场效应晶体管vdmos芯片的封装结构及封装方法
CN118335763B (zh) * 2024-06-12 2024-10-25 甬矽电子(宁波)股份有限公司 传感器封装结构和传感器封装制作方法

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Also Published As

Publication number Publication date
WO2013089780A1 (en) 2013-06-20
IN2014CN03370A (enExample) 2015-07-03
US9478476B2 (en) 2016-10-25
KR101584471B1 (ko) 2016-01-22
CN103999215A (zh) 2014-08-20
US20130270691A1 (en) 2013-10-17
KR20140094612A (ko) 2014-07-30

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