CN103998985B - The manufacture method of large-scale phase-shift mask and large-scale phase-shift mask - Google Patents

The manufacture method of large-scale phase-shift mask and large-scale phase-shift mask Download PDF

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Publication number
CN103998985B
CN103998985B CN201280062178.8A CN201280062178A CN103998985B CN 103998985 B CN103998985 B CN 103998985B CN 201280062178 A CN201280062178 A CN 201280062178A CN 103998985 B CN103998985 B CN 103998985B
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mentioned
phase
light
translucent
exposure
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CN103998985A (en
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木下树
木下一树
飞田敦
二岛悟
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Abstract

The present invention is provided in a kind of large-scale photomask for the manufacture of liquid crystal panel or EL panels, suitably forms the structure and its manufacture method of the translucent phase-shift mask of fine pattern.And then, there is provided a kind of caused structure at the side peak for suppressing to occur when being exposed pattern using translucent phase-shift mask.Adjacently it is configured with the both sides for forming translucent phase shifting region on the transparent substrate in the pattern of penetrating region, by the scope that the light light transmittance of translucent phase shifting region is set to 4% to 30%, width is set to 1 μm to 5 μm of scope, and realizes the contrast for improving exposure intensity distribution while suppresses structure caused by the peak of side.

Description

The manufacture method of large-scale phase-shift mask and large-scale phase-shift mask
Technical field
The present invention relates to a kind of photomask, more particularly to it is a kind of liquid crystal display, electroluminescent (EL, ElectroLuminescence) used in the manufacture of the active matrix such as display device (active matrix) formula display device The manufacture method of large-scale photomask and large-scale photomask.
Background technology
The specification of the photomask used in the manufacture of flat-panel monitor (being abbreviated as FPD (Flat Panel Display)) Change be with using in having a slim TV of liquid crystal display (LCD (being abbreviated as Liquid Crystal Display)) It was observed that large screen and High precision be representative.On large screen, start in the volume production of the slim TV of liquid crystal The size for the glass substrate for being referred to as 1st generation that or so nineteen ninety is used in manufacturing is 300mm × 400mm, is opened at 2002 or so It is 1100mm × 1300mm to begin for the size of the 5th generation glass substrate in manufacture, is started in manufacture within 2006 or so The size of 8th generation glass substrate reaches 2140mm × 2460mm.
The High precision of liquid crystal display is initially that high pixelation has developed in personal computer display.Depending on Frequency graphic array (VGA, Video Graphics Array) display is 640 × 480 pixels, XGA (XGA, Extended Graphics Array) display is 1024 × 768 pixels, in ultra extended graphics array (sXGA, Super Extended Graphics Array) it is 1280 × 1024 pixels in display, ultra extended graphics array (UXGA, Ultra Extended Graphics Array) display is 1600 × 1200 pixels.With the contour pixelation, pel spacing also from 0.33mm develops into 0.24mm, 0.20mm and continuous miniaturization.And then in intelligent mobile phone (smart phone) etc., It is 1280 × 720 pixels in 4.5 types, pel spacing reaches 0.077mm (329ppi).Also, hd-tv (HDTV, High Definition Television) it is 1920 × 1080 pixels, further interpolated pixel also be present and make pixel count be HDTV's The display of 4 times of 3840 × 2160 pixels (being referred to as 4K liquid crystal panels).
The exposure device, the photomask used in exposure device that manufacture liquid crystal display as described above are entered below Row explanation.Colorful film transistor (TFT, Thin Film Transistor) as representative liquid crystal display The unit of liquid crystal display is to enclose liquid crystal between the colored filter and tft array substrate manufactured respectively to form. And then in liquid crystal display, load the peripheral drive that signal of video signal is converted to TFT drive signal and is supplied is electric Road and backlight, and LCD MODULE is made.
The pattern used in each step of tft array substrate manufacturing step is to utilize the large-scale of the equimultiple that multiplying power is 1 to 1 Mask exposes and formed in the projection type exposure device (being also known as projection aligner) of equimultiple.At present, large-scale covered using this The projection exposure mode of the equimultiple of film turns into productivity well and the standard of pattern formation is accurately carried out to tft array substrate Manufacture method.Furthermore in the pattern of colored filter is formed, favourable proximity printing mode is standard in terms of cost Manufacture method.Proximity printing is to configure mask and exposure object so that tens of μm~100 μm or so of gap is close, and from The Exposure mode of the rear irradiation directional light of mask.
The large-scale mask of tft array substrate is initially started with 350mm × 350mm size, with tft array substrate Manufacture in the maximization of the projection type exposure device of equimultiple that uses and it is constantly in large size.For tft array substrate In the projection type exposure device of the equimultiple of manufacture, have in order to which the pattern projection exposure of mask is used into mirror system to workpiece Mirror projection exposure mode and 2 kinds of lens projects Exposure mode using lens combination.According to the rule of each exposure device Lattice, the size of the large-scale mask used is different, for the 5th generation glass substrate, in mirror projection exposure mode using 520mm × The large-scale mask of 610mm size, the large-scale mask of 800mm × 920mm size is used in lens projects Exposure mode.Enter And for the 8th generation glass substrate, in mirror projection exposure mode using 850mm × 1400mm size large-scale mask, The large-scale mask of 1220mmx1400mm size is used in lens projects Exposure mode.It by one side is more than 350mm to be in this case Photomask be set to large-scale mask.
Cornerwise length of the mask (6 inches of photomasks) of common semiconductor is about 215mm, on the other hand, on The cornerwise length for stating large-scale mask is 495mm in 1st generation mask, is about in the mirror projection exposure mode in the 5th generation 801mm, in lens projects Exposure mode large-scale mask medium-and-large-sizedization to 1856mm in the 8th generation.
As described above, the large-scale mask that the pattern for tft array substrate is formed is covering relative to semiconductor crystal wafer Film is expressed as 2.3 times to 8.6 times of size with the ratio of cornerwise length.And then time, review time etc. are drawn with being manufactured into This directly related area ratio is 4.4 times to 72 times.The requirement in terms of caused cost according to therefore kind large scale, it is large-scale to cover Film had been previously binary mask (binary mask), and Rotating fields include the shading using chromium as principal component being layered on quartz glass Film and 2 layers using chromium oxide or nitrogen oxidation chromium as the anti-reflective film of principal component being layered on photomask.It is furthermore, it is necessary to large-scale Light transmittance under the exposure wavelength of the photomask of binary mask is less than 0.1% and the reflectivity of anti-reflective film is less than 30% Performance.
As described above, tft array substrate maximizes, on the other hand, the miniaturization of pattern is required in recent years.I.e., it is desirable to connect The fine pattern of the resolution limit of nearly exposure device is equably imaged in the entirety of exposure area.Especially tft array substrate Gate electrode and source drain electrode, contact hole photomask requirement pattern miniaturization.However, in the system of liquid crystal panel Make the lens combination of the middle large-scale projection aligner used numerical aperture it is smaller be 0.1 or so, the limit of resolution ratio is also 3.0 μm, so as to have the limit in the formation of fine pattern.
If use the fine line below the resolution limit formed with exposure device and gap (L/S, line and Space) part of the photomask of the binary form of pattern to anti-aging drug, the then line on imaging surface, with photomask (shading) And the amplitude of exposure intensity corresponding to the part of gap (transmission) is smaller, the light exposure of part corresponding with gap (transmission) portion is not Reach the threshold value of the sensitivity of resist, as a result, even if making resist development, can not also form pattern.
One of solution method as the prior art for above-mentioned problem the, in (Japanese Patent Laid-Open of patent document 1 2009-4242753 publications) in propose there is method using gray tone mask.Utilize Fig. 1 described in referenced patents document 1 Fig. 7 and in order to illustrate Fig. 7 and Fig. 8 for schematically showing exposure light amount distribution of addition is illustrated.
As illustrated in Fig. 7 (a), the photomask 70 illustrated in the prior art is formed with using not on transparency carrier 71 The light shielding part 74 of photomask 72 with fine pattern, using the semi-transparent film 73 without fine pattern semi light transmitting part 75, Utilize fine pattern portion 76 (including transmittance section and semi light transmitting part using semi-transparent film 73), the transmittance section 77 of semi-transparent film 73 4 regions of (transparency carrier 71 exposes).
If being exposed using the above-mentioned photomask 70 illustrated in the prior art and exposure light 5, pattern is transferred to and turned The photoresistance film 83 of the eurymeric on body 80 is printed, then as shown in Fig. 7 (b), being formed on transfer printing body 80 includes the thick film after developing Residual film region 83a, the residual film region 83b of film, fine pattern area corresponding with the fine pattern portion 76 on above-mentioned photomask 70 Domain 83c and region 83d substantially without residual film transfer pattern (photoresistance pattern).Furthermore symbol 82a, 82b in Fig. 7 are represented The film being layered on substrate 81 in transfer printing body 80.
In fig. 8, it is illustrated that and illustrate the effect of the fine pattern 76 of semi-permeable film.That is, such as common binary mask, close The distribution shape 84c of exposure light amount when the situation of fine pattern is formed using photomask, because pattern is not in micro situation Lower solution picture, even if so light exposure corresponding with transmittance section peak fractions, the exposure that also not up to eurymeric resist comes off Amount 85, and it is unpatterned (Fig. 8 (b)).On the other hand, enter in the photomask 70 using the fine pattern 76 with semi-permeable film During the situation of row exposure and transfer, the light transmission capacity for exposing light is more than the fine pattern portion of the photomask using common binary mask Exposure light amount light transmission capacity.Therefore, the distribution shape of the exposure light amount during situation of semi-permeable film formation fine pattern is utilized 83c is to reach the light exposure 85 that eurymeric resist comes off in the part of the peak value of light exposure corresponding with transmittance section, even if being micro- Thin pattern, it can also obtain sufficient light exposure and form pattern 83c on resist (Fig. 8 (a)).
On the other hand, in the photomask 70 using such a prior art and by the fine figure of the semi-transparent film 73 of exposure transfer During case 76, the light transmission capacity for exposing light is saturating more than the exposure light amount in the light-shielding pattern portion of the photomask using common binary mask Light quantity, the contrast of exposure light amount distribution reduce.Therefore, the quilt during situation using the fine pattern portion 76 of semi-permeable film is transferred The photoresistance residual film value of fine pattern region 83c on transfer article is less than corresponding during the situation with transferring common shading film figure Thick film residual film region 83a photoresistance residual film value.Therefore, it is the etch process of the transfer printing body after suitably progress, and it is required The condition in the developing manufacture process of the resist after light exposure while subtly adjustment exposure is adjusted, and preferably adjusts fine pattern Region 83c photoresistance residual film value, and as cause expose transfer step difficulty the main reason for.More than, using eurymeric resist as Example is illustrated, and the fine adjustment of exposure imaging condition is also needed also exist in the situation of negative resist.
Prior art literature
Patent document
Patent document 1：Japanese Patent Laid-Open 2009-42753 publications
The content of the invention
Problems to be solved by the invention
As described above, the photomask used in the manufacture using liquid crystal display as the flat-panel monitor of representative is large-scale Change and continue to develop, on the other hand, the miniaturization of the display pixel spacing of flat-panel monitor continues to develop, the transfer figure to photomask The requirement of the miniaturization of case also smartens.
The problem of the present invention is in a kind of large-scale projection exposure in by the manufacture for liquid crystal display panel of offer When pattern is transferred to transfer printing body by device, the contrast for improving the exposure light amount distribution of the fine pattern on imaging surface is turned The phase-shift mask of the structure of the suitable large-scale photomask of print, while its manufacture method is provided.
The means used to solve the problem
(the 1st means)
The 1st means of the present invention are that a kind of large-scale phase-shift mask (below, has the feelings that referred to as phase-shift mask illustrates Shape), its translucent translucent phase shift film for including transparency carrier and being formed on above-mentioned transparency carrier (below, has referred to as The situation that phase shift film illustrates), and including expose the penetrating region of above-mentioned transparency carrier and on above-mentioned transparency carrier only It is provided with the translucent phase shifting region (following, there is the situation that referred to as phase shifting region illustrates) of above-mentioned phase shift film, and including The mask pattern of above-mentioned penetrating region and above-mentioned translucent phase shifting region is adjacently configured with, and passes through above-mentioned translucent phase-shifted region The phase of the exposure light in domain relative to the exposure light through above-mentioned penetrating region phasing back, by the exposure of above-mentioned penetrating region When the light transmittance of light light is set to 100%, the light transmittance of the exposure light of above-mentioned translucent phase shifting region is 4% to 30% scope Value.
By the phase-shift mask of the structure using above-mentioned 1st means, it can easily make and exposure diagram is improved to fine pattern The large-scale mask of the contrast of case.And then if the light transmittance of the exposure light of above-mentioned translucent phase shifting region is less than 4%, utilize The effect that phase shift improves contrast is smaller, if the light transmittance of the exposure light of above-mentioned translucent phase shifting region is more than 30%, shading Function deficiency, and produce the photosensitive possibility of the overall resist in translucent phase shifting region.
(the 2nd means)
The 2nd means of the present invention be such as the large-scale phase-shift mask of the 1st means, wherein, be included in above-mentioned translucent phase-shifted region The both sides in domain are adjacently configured with the pattern of above-mentioned penetrating region, and the width of above-mentioned translucent phase shifting region is 1 μm to 5 μm of model The width enclosed.
According to the 2nd means, in large-scale phase-shift mask, obvious side peak (side peak) can be prevented, and can prevent The minus that produces recess on eurymeric resist surface when by mask pattern exposure imaging to photonasty resist or should remove resists Erosion agent remains in the surface of substrate processing compared with unfertile land.
(the 3rd means)
The 3rd means of the present invention be such as the large-scale phase-shift mask of any one of the 1st or 2 means, wherein, above-mentioned translucent phase It is the individual layer containing chromium and chromium compound or 2 layers of structure to move film.
According to the 3rd means, it is made up of, is carried out using Wet-type etching semi-transparent chromium and chromium compound by translucent phase shift film The pattern of bright phase shift film is formed, and therefore, the effect for suppressing the manufacturing cost of large-scale phase-shift mask is larger.
(the 4th means)
The 4th means of the present invention are the large-scale phase-shift masks such as any one of the 1st to 3 means, wherein, above-mentioned translucent phase The thickness for the scope that the thickness for moving film is 0.1 μm to 0.14 μm.
According to the 4th means, by making to be exposed in the exposure device of liquid crystal display as using large-scale mask G rays, h rays, the phase shift film of the above-mentioned thickness of i Radiolucents of the extra-high-pressure mercury vapour lamp of the light source of light time, and make phase relative In the light reversion through penetrating region, so as to obtain the phase shift for improving the contrast of exposing patterns in imaging surface well Effect.
(the 5th means)
The 5th means of the present invention are the large-scale phase-shift masks such as any one of the 1st to 4 means, wherein, including formed upper The translucent 2nd translucent phase shift film stated the photomask on transparency carrier and formed in a manner of covering above-mentioned photomask, and Mask pattern including being configured with lightproof area and the 2nd translucent phase shifting region, the lightproof area are to be stacked above-mentioned screening Light film and above-mentioned 2nd translucent phase shift film, the 2nd translucent phase shifting region is arranged on above-mentioned lightproof area and above-mentioned penetrating region Between and be provided only with above-mentioned 2nd translucent phase shift film, and the phase phase of the exposure light through above-mentioned 2nd translucent phase shifting region Phasing back for the exposure light through above-mentioned penetrating region.
According to the 5th means, by addition to including penetrating region, translucent phase shifting region, also including being configured with shading region Domain and the mask pattern of the 2nd translucent phase shifting region, the resist with various width can be exposed well and is patterned.
(the 6th means)
The 6th means of the present invention are a kind of manufacture methods of large-scale phase-shift mask, and it comprises the following steps：Prepare with photosensitive Property resist blank (blanks), the blank with photonasty resist be transparency carrier one side be laminated with chromium and chromaking Photonasty resist is coated with the blank that compound forms for the translucent phase shift film of material；And
Required pattern exposure after being developed, is entered to the above-mentioned blank with photonasty resist using describing device Row Wet-type etching, photonasty resist is removed, and above-mentioned translucent phase shift film is formed pattern.
According to the 6th means of the present invention, because the pattern that translucent phase shift film can be carried out with 1 Wet-type etching is formed, therefore And the effect for suppressing the manufacturing cost of large-scale phase-shift mask is larger.
Invention effect
By the large-scale phase-shift mask using the present invention, fine pattern can be improved translucent in the region of large area Contrast on the imaging surface of phase shifting region and penetrating region.And then due to making phase shift film form pattern using Wet-type etching, therefore And the manufacturing cost of large-scale phase-shift mask can be reduced.
Brief description of the drawings
Fig. 1 (a) is the profile of the construction for the large-scale phase-shift mask for illustrating embodiments of the present invention.(b) and (c) is Represent the amplitude of the exposure light of the large-scale phase-shift mask of the present invention and the figure of the distribution of intensity.
Fig. 2 (a) is the figure of the comparative example for the effect for illustrating phase-shift mask to (d).
Fig. 3 is the profile for the manufacturing step for illustrating the large-scale phase-shift mask of the present invention.
Fig. 4 (a) is that exposure intensity when obtaining the situation for changing the width W of phase shifting region using exposure emulation is distributed Change and the curve that is represented.(b) be enlarged representation (a) exposure intensity distribution central portion curve.(c) it is to represent (a) curve of the central luminous intensity of each exposure intensity distribution and the height at side peak.
Fig. 5 is that the exposure intensity of the large-scale phase-shift mask using the present invention is distributed, with being covered using the binary of identical patterns The exposure intensity distribution of film is compared the curve of the exposure simulation result of gained.
Fig. 6 (a) is the plan for representing embodiments of the present invention.(b) be represent comparative example binary mask it is flat Face figure.(c) it is overlappingly to represent the exposure intensity distribution of embodiments of the present invention and the song that the exposure intensity of comparative example is distributed Line.
Fig. 7 is the section for schematically showing the situation by the use of the intermediate tone mask replicated fine pattern as prior art Figure.
Fig. 8 (a) is that exposure when schematically illustrating the situation using Fig. 7 intermediate tone mask exposure fine pattern is strong Spend distribution figure, (b) be schematically show using binary mask exposure fine pattern situation when exposure intensity be distributed with The explanation figure being compared.
Fig. 9 is the explanation that the example of the pattern of the translucent phase shifting region in the large-scale phase-shift mask to the present invention illustrates Figure.
Figure 10 is the skeleton diagram of another for representing the large-scale phase-shift mask of the present invention.
Figure 11 is the explanation figure that the edge phase shifting region in the large-scale phase-shift mask to the present invention illustrates.
Figure 12 is that the contrast that the exposure intensity of the edge phase shifting region in the large-scale phase-shift mask to the present invention is distributed carries Explanation figure of the effect risen compared with previous binary mask.
Figure 13 is the general view of the example of the large-scale phase-shift mask in the reference example for represent the present invention.
Figure 14 is the figure that the exposure intensity distribution of the large-scale phase-shift mask in the reference example to the present invention illustrates.
Figure 15 is the enlarged drawing of Figure 14 C portion.
Figure 16 is the enlarged drawing of Figure 14 D parts.
Embodiment
Hereinafter, referring to the drawings, the structure of large-scale phase-shift mask and its embodiment of manufacture method of the present invention are carried out Explanation.
Fig. 1 (a) is the profile of the construction for the embodiment for schematically showing the large-scale phase-shift mask of the present invention.Figure 1 (b) and Fig. 1 (c) be represent embodiments of the present invention large-scale phase-shift mask exposure light amplitude and intensity under effect Figure.Fig. 2 (a)~(d) is the width and the ratio of the relation of exposure intensity distribution shape for the pattern for illustrating translucent phase shifting region Compared with the figure of example.
(structure of large-scale phase-shift mask)
As shown in Fig. 1 (a), the structure of large-scale phase-shift mask 10 of the invention is to include transparency carrier 1 and formed above-mentioned Translucent phase shift film 2 on transparency carrier 1, including expose the penetrating region 3 of above-mentioned transparency carrier 1 and in above-mentioned transparent base Be provided only with the translucent phase shifting region 4 of above-mentioned translucent phase shift film 2 on plate 1, and including above-mentioned penetrating region 3 with it is above-mentioned semi-transparent The pattern that bright phase shifting region 4 abuts, and it is above-mentioned relative to passing through through the phase of the exposure light of above-mentioned translucent phase shifting region 4 Cross the phasing back of the exposure light in region 3.Herein, so-called large-scale phase-shift mask refer to the length at least its one side for 350mm with On mask.
(the exposure intensity distributed model of phase-shift mask)
Next, explanation through large-scale phase-shift mask exposure light on imaging surface light intensity distributions (be also referred to simply as " Exposure intensity be distributed ") model.Fig. 1 (b) represents the imaging surface (specifically photonasty resist face) of large-scale phase-shift mask On optical ampeitude, Fig. 1 (c) represents the exposure intensity distribution on the imaging surface of large-scale phase-shift mask.The intensity of light is to light Amplitude carry out square and obtain, the amplitude of light turns into positive and negative value with its phase, and on the other hand, the intensity of light is (with energy Measure identical) only show on the occasion of.Also, the direction of the lateral translucent phase shift film 2 of exposure light 5 self-induced transparency substrate 1 as shown in Fig. 1 (a) Irradiation.As exposure light 5, can be penetrated from the g rays (wavelength 436nm), h rays (wavelength 405nm), i of extra-high-pressure mercury vapour lamp Selection uses in line (wavelength 365nm), KrF PRKs (wavelength 248nm), ArF PRKs (193nm).Just For practical aspect, because the pattern of tft array substrate is formed as large area, and the big light quantity of light needs is exposed, so using only Ray containing i, comprising h rays, i rays 2 wavelength or comprising g rays, h rays, i rays 3 wavelength exposure light.
By exposure light 5 through large-scale phase-shift mask 10, by the imaging optical system (non-icon) of exposure device and anti- Optical ampeitude when imaging surface in erosion agent is imaged is shown in Fig. 1 (b) solid line 15, and light intensity distributions are shown in Fig. 1 (c) reality Line 16.As comparative example, the light intensity distributions on the imaging surface during situation of translucent phase shift film 2 will be replaced to show using photomask In Fig. 1 (c) dotted line 17.
Exposure light 5 can be divided into the penetrating region 3a on the right side through large-scale phase-shift mask 10 light 11a, through translucent phase Move region 4 light 11c, through left side penetrating region 3b light 11b.With following optical ampeitude shape, i.e. through large-scale The exposure light 11a of phase-shift mask 10 is the transmission light that light transmittance is 100% in the 3a of penetrating region, in the region in addition to 3a (shading side), is zero through light, and exposure light 11b is the transmission light that light transmittance is 100% in the 3b of penetrating region, in addition to 3b Region, be zero through light, exposure light 11c be in translucent phase shifting region 4 light transmittance be T% pass through light, translucent It is zero through light beyond phase shifting region.This is divided into exposure light 11a, 11b, 11c of 3 beams respectively by the imaging of exposure device Lens (not shown), and 3 optical ampeitude shape 12a, 12b, 14 (in Fig. 1 (b) be represented by dotted lines) are formed in imaging surface, 3 optical ampeitude shapes is added the value of gained turns into the light amplitude being imaged using large-scale phase-shift mask 10 in exposure device Distribution shape 15 (principle being referred to as superimposed).
On the other hand, except the optical ampeitude 14 being imaged if will transmit through translucent phase shifting region 4, light amplitude is only obtained Be distributed 12a and 12b's and, then turn into through by translucent phase shift film 4 be replaced into photomask binary mask expose light existing Optical ampeitude on imaging surface.
Make the optical ampeitude 12a's for the imaging surface that the exposure light 11a through penetrating region 3a is imaged in exposure device Shape is because exposing the aberration of the wavelength X of light, the numerical aperture NA of imaging len and imaging len (i.e. from preferable imaging performance Deviation) and formed.The optical ampeitude 12a of imaging surface shape be using project to imaging surface penetrating region 3a border as Reference position, in the both sides on said reference position (border), from penetrating region 3a, laterally the translucent side of phase shifting region 4 (quite exists Shading side) slowly reduce, once as negative light amplitude (i.e. phasing back) and as after negative peak 13a, light amplitude is gradual Close to zero.Just it is referred to as secondary lobe in the extension of shading side more than the border of light transmissive region as described above, in secondary lobe In distribution shape, the part 13a that amplitude is turned into the extreme value of maximum is referred to as the peak value of secondary lobe.The peak value 13a of secondary lobe position with The optical property of exposure device is relevant, and formed to the border of light transmissive region at a distance of with exposure wavelength lambda proportional and numerical value Distance (distance i.e. proportional to λ/NA) place inversely proportional aperture NA.That is, the peak value of secondary lobe is formed in by exposure ripple The position of the boundary position for light transmissive region of the distance away from photomask pattern that the characteristic of long λ and exposure device lens determines Put.
Make the optical ampeitude 12b's for the imaging surface that the exposure light 11b through penetrating region 3b is imaged in exposure device Shape is that shape for making above-mentioned optical ampeitude 12a or so inverts and with penetrating region 3b and the border of translucent phase shifting region 4 On the basis of the optical ampeitude shape that is configured of position, and accordingly there is with the peak value 13a of secondary lobe the peak value 13b of secondary lobe. Negative value of the peak value 13b of the secondary lobe light amplitude in the same manner as the peak value 13a of secondary lobe obtained by phasing back.
Make the imaging surface that the exposure light 11c through translucent phase shifting region 4 and phasing back is imaged in exposure device The shape of optical ampeitude 14 be on the basis of the border of translucent phase shifting region and light amplitude is slowly reduced in its both sides, and On the whole as the optical ampeitude shape with the extension for hanging mitriform of phasing back.
Through the overall exposure light of large-scale phase-shift mask by the imaging len of exposure device and the light that is imaged in imaging surface Distribution of amplitudes shape 15 be using superposition law will optical ampeitude 12a, 12b corresponding with 3 regions, 14 with translucent phase shift The width W in region 4 is accordingly configured and is added and obtains.Specifically, because the width W of translucent phase shifting region 4 is also the right side The penetrating region 3a of side border, the distance with the penetrating region 3b in left side border, so make the penetrating region 3a with right side The optical ampeitude on optical ampeitude 12a, imaging surface corresponding with the penetrating region 3b in same left side on corresponding imaging surface 12b 2 optical ampeitudes are separated by the distance W of reference position and are added (superposition), and then plus right with translucent phase shifting region 4 Optical ampeitude 14 on the imaging surface answered, and obtain the light on imaging surface and divide amplitude cloth 15.
(contrast lifting)
Light intensity distributions 16 on imaging surface shown in Fig. 1 (c) are that the progress square of light amplitude 15 is obtained.Therefore, i.e., Just negative part in light amplitude be present, luminous intensity is also always just.Light intensity distributions 17 are represented translucent phase shifting region 4 The light intensity distributions on imaging surface when being replaced into the situation of lightproof area.Due to the phase of the light amplitude of translucent phase shifting region 4 Bit reversal and turn into negative value, so the secondary lobe near the boundary portion of the light transmissive region in the light intensity distributions 16 on imaging surface obtains It is stronger to dim portion compared with the light intensity distributions 17 when the situation without translucent phase shifting region 4 to eliminate, and make pair of pattern Lifted than degree.Because if the width W of pattern is narrow, the light amplitude enhancing of secondary lobe, so the phasing back eliminated must be made Light amplitude become strong, and the light transmittance T in translucent phase shift portion 4 must be set to higher.According to above-mentioned translucent phase shifting region 4 Effect, the effect for the dark portion for emphasizing light intensity distributions is shown in Fig. 1 (c) oblique line portion 18.
(mitigation at side peak)
Next, optical ampeitude 15 and light of the peak value of the width W and secondary lobe to translucent phase shifting region 4 to imaging surface The influence of intensity distribution 16 illustrates.Secondary lobe is produced because of the exposure wavelength of exposure device and imaging len, the peak of secondary lobe It is worth (13a, 13b) to produce in the position of the boundary portion fixed distance with light transmissive region (3a, 3b).The peak value of the secondary lobe The phasing back of light amplitude, through translucent phase shifting region 4, mutually strengthen light in imaging surface with the exposure light 11c of phasing back Amplitude, and the region of the stronger point-like of exposure intensity or wire is produced and (is referred to as side peak).Such a side peak is not in imaging surface pair Resist forms the luminous intensity of the degree of pattern, but makes it photosensitive in certain degree, in the situation of eurymeric resist, is developing When, the part on resist surface melts and forms recess, or in the situation of negative resist, the resist that should be removed is in point Shape or the surface that substrate processing is linearly remained in compared with unfertile land.The recess or resist on such a resist surface remain in semiconductor Defect is judged as in the photoresistance pattern inspection of production stage, and as the obstacle of semiconductor production step.
The caused means A at the mitigation side peak of the present invention is set to the mask of following structure, i.e. by semi-permeable phase shifting region Width W be limited to below Wp, and the peak value 13a of the penetrating region 3a on right side secondary lobe, the side with the penetrating region 3b in left side The peak value 13b of valve will not be overlapped and change is strong.Specifically, the width W of translucent phase shifting region is set to the peak compared with secondary lobe It is worth the small width of the width Wp of overlapping semi-permeable phase shifting region.The mask of such a structure is illustrated using Fig. 2 afterwards.
Caused another means B at the above-mentioned side peak of mitigation of the present invention is set to the mask of following structure, i.e. makes translucent The width W of phase shifting region is narrow, in above-mentioned translucent phase shifting region central portion, increases the overlapping of positive amplitude components of secondary lobe, and Eliminate the phasing back from translucent phase shifting region 4 optical ampeitude 14, so as to do not make exposure light on imaging surface Light amplitude is negative.Situation using the optical ampeitude on imaging surface of the exposure light of the mask of such a structure is shown in Fig. 1 (b).That is, make the more set width Wq of the width W of translucent phase shifting region 4 narrow, utilize optical ampeitude 12a secondary lobe and light The optical ampeitude 14 that distribution of amplitudes 12b secondary lobe counteracting passes through translucent phase shifting region 4 and phase inverts in imaging surface, and prevent Only exposing the light amplitude 15 of light turns into negative (phasing back).If the light amplitude 15 of exposure light is always just, in exposure intensity point In cloth 16, side peak will not be produced as light amplitude turns into zero.That is, following situation can be prevented, i.e. if light amplitude turns into zero, Luminous intensity is also zero, and forms minimum, attaches and nearby forms the peak value of luminous intensity in minimum.
On the other hand, width W lower limit be in the translucent phase shifting region as the region for being intended for use in shading originally, with The increase of luminous intensity turns into the width Ws that the mode below set value is limited caused by the overlapping increase of secondary lobe, In pattern narrow wider width degree Ws, the exposure light increase of dark portion is entered to, the pattern of resist forms insufficient, and can not use Make photomask.
On the means A for the influence for mitigating side peak, by the use of Fig. 2 (a)~(d) as comparative example to base in translucent phase shift The change of the light intensity distributions of the width W in region and the peak of secondary lobe specifically illustrates.Fig. 2 (a)~(b) is secondary lobe The comparative example that is separated by of peak value, Fig. 2 (c)~(d) is the overlapping comparative example of the peak value of secondary lobe.Fig. 2 (a) schematically shows semi-transparent The peak value 13a of wider, right side the penetrating region 3a of width W2 of bright phase shifting region secondary lobe, the side with the penetrating region 3b in left side The peak value 13b of valve is separated by the optical ampeitude without interactional state.The peak value 13a and 13b of secondary lobe phasing back And with negative light amplitude, the exposure light 24 with passing through translucent phase shifting region 4 mutually strengthens in imaging surface, and in imaging surface Expose peak value 21a, 21b that obvious 2 phasing back is formed in the optical ampeitude 25 of light.
The exposure intensity distribution of mask including translucent phase shifting region is that the progress square of optical ampeitude 25 is obtained, Its shape is illustrated schematically in Fig. 2 (b) curve 26.The optical ampeitude 25 of light is exposed with to translucent phase shifting region 4 It is close and reduce, after as zero, turn into negative peak 21a corresponding to the peak value 13a of secondary lobe.Change with the value accordingly, Exposure intensity distribution 26 turns into zero position with leaning on and then reducing from penetrating region to translucent phase shifting region 4, in light amplitude, Luminous intensity also turns into zero, next, on the occasion of increase, to turn into negative peak 21a accordingly with light amplitude, luminous intensity turns into positive peak 29a (is referred to as side peak), hereafter, close to luminous intensity corresponding with the light transmittance T of translucent phase shifting region 4.
Herein, due to offside peak 29a add phase shifting region 4 the light amplitude through light, so easily because of binary mask and Cause and recess is formed on resist surface or produces the problem of resist remains in substrate surface.
On the other hand, by translucent phase shifting region 4, and the exposure intensity distribution to pattern boundaries portion improves steepness (contrast).The distribution of the exposure intensity of binary mask is shown in Fig. 2 (b) dotted line 27, by its with including translucent phase shifting region Mask exposure intensity distribution 26 difference represented with oblique line portion 28.
Schematically illustrated according to figure 2 above (a), (b), judge that the width W2 in translucent phase shifting region 4 is fully big Situation when, compared with binary mask, contrast is improved, but side peak is also higher.
Next, Fig. 2 (c), (d) are represented with the light amplitude 12a of the imaging surface based on penetrating region 11a and 11b secondary lobe Peak value, the mode overlapping with the peak value of light amplitude 12b secondary lobe select translucent phase shifting region 4 width W comparative example.Figure The light amplitude on imaging surface of the exposure light using the mask for including the translucent phase shifting region 4 that width is Wp is represented in 2 (c) Distribution 35.The peak value 31 of optical ampeitude 35 be not only right side penetrating region 3a secondary lobe peak value, with left side pass through area The peak value of domain 3b secondary lobe is overlapping, and further adds the amplitude 34 of the light through translucent phase shifting region 4, and is formed larger Negative peak 31.
Fig. 2 (d) represent by the peak value of light amplitude 12a secondary lobe, it is overlapping with the peak value of light amplitude 12b secondary lobe in a manner of select Exposure intensity when selecting the width Wp of translucent phase shifting region situation is distributed 36 (for comparative example).Expose the optical ampeitude of light 35 correspond to translucent phase shifting region 4 and reduce, and after as zero, turn into negative pole value in the peak value of secondary lobe.Shaken corresponding to the light The change of width distribution 35, exposure intensity distribution 36 turn into before from penetrating region to lightproof area and then reducing in light amplitude Zero position, exposure intensity are also zero, next, on the occasion of increase, to turn into negative peak accordingly with light amplitude, exposure intensity is also It is afterwards the light intensity distributions of symmetric figure as positive peak 39.Herein, the peak value 39 of exposure intensity distribution 36 is that have 1 in center It is individual, and make the peak value of 2 secondary lobes, be added with the light transmission capacity of phase shifting region 4 and turn into larger peak value, therefore, easily cause Resist surface forms recess or produces the problem of resist remains in substrate surface.
On the other hand, the exposure intensity distribution in pattern boundaries portion is to improve light intensity distributions by translucent phase shifting region Steepness (contrast).The distribution of the exposure intensity of binary mask is shown in Fig. 2 (d) dotted line 37, and by its with including semi-transparent The difference of the light intensity distributions 36 of the imaging surface of the mask of bright phase shifting region is represented with oblique line portion 38.
According to figure 2 above (c), the explanation of (d), the width W in translucent phase shifting region is the overlapping width of the peak value of secondary lobe When spending Wp situation, compared with binary mask, contrast is improved, but side peak highest.In the present invention, by making phase-shifted region The width Wp that the width W in domain is overlapping compared with the peak value of secondary lobe is narrow, and reduces the influence at side peak.
The explanation of comparative example according to the explanation of Fig. 1 utilized above effect of the invention and Fig. 2, the present invention are Pattern is formed by using translucent phase shift film, and the contrast lifting for being distributed the exposure intensity in pattern boundaries portion, while by It is narrow by the width Wp for making the width W of translucent phase shifting region overlapping compared with the peak value of the secondary lobe of penetrating region, and mitigate the production at side peak It is raw.And then by being set to the mask of following structure, and prevent the generation at side peak, i.e. make the width W of translucent phase shifting region narrow, Increase the overlapping of positive amplitude components of secondary lobe, and eliminate the light amplitude of the phasing back from translucent phase shifting region 4, so as to The light amplitude on imaging surface for making exposure light is not negative.
(structural material of large-scale phase-shift mask)
Simultaneously the profile one of reference picture 1 (a) is in face of the specific of each structural element of the large-scale phase-shift mask 10 of the present invention Material illustrates.The structure of large-scale phase-shift mask 10 shown in Fig. 1 (a) is to include transparency carrier 1 and formed above-mentioned transparent The photomask of the construction of translucent phase shift film 2 on substrate 1.
The size of the transparency carrier 2 used in the large-scale phase-shift mask 1 of the present invention is 350mm × 350mm to 1220mm × 1400mm, thickness are 8mm~13mm.Low-expansion glass (aluminium borosilicate glass, borosilicate through optical grinding can be used in material Sour glass), synthetic quartz glass, the higher synthetic quartz glass of light transmittance preferably smaller using coefficient of thermal expansion and ultraviolet Glass.
(structure of translucent phase shift film)
The structure of translucent phase shift film 2 has following 2 kinds of forms, i.e. selection can make the thickness of the phasing back of exposure light Obtain the material of required light light transmittance and formed with monofilm；And it is set to containing mainly making the light transmittance of phasing back higher Material phase adjustment layer and 2 layers of light transmittance adjustment layer containing the relatively low material of the main light transmittance for determining light transmittance Structure.
When being formed the situation of translucent phase shift film 2 with individual layer, selective refraction rate n higher (be usually more than 1.5) and can So that needed for the thickness d (d=λ/2 (n-1)) of the phasing back for the exposure light that wavelength is λ obtained in the range of 4% to 30% Light transmittance material.As the material of such a translucent phase shift film formed with individual layer, nitrogen oxidation chromium (CrON), nitrogen can be illustrated Molybdenum silicide (MoSiN), silicon oxynitride molybdenum (MoSiON), silicon oxynitride (SiON), titanium oxynitrides (TiON), and change oxygen or nitrogen Containing ratio and adjust light transmittance.
When being formed the situation of translucent phase shift film 2 with 2 layers, first, as the material of phase adjustment layer, select exposing Refractive index is higher under wavelength and light light transmittance also higher material, and is set to the layer for making phasing back, and then, as light transmittance The material of adjustment layer, the relatively low material of light transmittance at the exposure wavelength is selected, it is overall as 2 layers of films, so that the phase of exposure light The mode that bit reversal and light transmittance turn into required value adjusts each thickness.As the material of phase adjustment layer, nitrogen oxidation chromium is used (CrON), fluorine chromium oxide (CrFO), silicon oxynitride (SiON), silicon oxynitride molybdenum (MoSiON), titanium oxynitrides (TiON), as saturating Light rate adjustment layer, use chromium (Cr), chromium nitride (CrN), tantalum (Ta), titanium (Ti).As the tool that translucent phase shift film is formed with 2 layers The combination of materials of body, it can illustrate and phase adjustment layer is set to nitrogen oxidation chromium (CrON) and light transmittance adjustment layer is set to chromium nitride (CrN) combination, phase adjustment layer is set to fluorine chromium oxide (CrFO) and light transmittance adjustment layer is set to chromium nitride (CrN) group Close and phase adjustment layer is set to silicon oxynitride molybdenum (MoSiON) and light transmittance adjustment layer is set to the oxygen compared with phase adjustment layer The combination of the less silicon oxynitride molybdenum (MoSiON) of ratio.
If translucent phase shift film 2 is especially set to the nitrogen oxides of the oxide containing chromium and chromium, the nitride of chromium, chromium Individual layer or 2 layers of structure, then when pattern is formed, using have good pattern processability cerous nitrate system Wet-type etching Agent carries out Wet-type etching, larger the advantages of in manufacturing cost.Especially for the phase shift film of 2 Rotating fields, using cerous nitrate system Wet etchant carries out Wet-type etching in a step to 2 kinds of layers, and can shorten step.Specifically, as the semi-transparent of individual layer Bright phase shift film, nitrogen oxidation chromium (CrON) film of individual layer can be illustrated.Also, as 2 layers of translucent phase shift film, it can illustrate and adjust phase Flood is set to nitrogen oxidation chromium (CrON) and light transmittance adjustment layer is set to the translucent phase shift film of the combination of chromium nitride (CrN).
Furthermore translucent phase shift film also can set low reflection layer if necessary in surface, and reduce the reflected light on surface.Make For the material of low reflection layer, chromium oxide (CrO) can be used.
Illustrate the optical characteristics needed for the translucent phase shift film 2 that is used in the present invention.That obtains translucent phase shift film 2 makes exposure The thickness of the phasing back of light light 5, the refractive index n of thickness d, phase shift film in phase shift film, expose the wavelength X of light, with exposing light π (n-1) the d/ λ of φ=2 relation between caused phase difference by phase shift film be present, because phase contrast reversal is φ=π, So the thickness d of phase contrast reversal turns into λ/2 (n-1).Specifically, if exposure light wavelength lambda is the 365nm of i rays, phase shift film Refractive index n be 2.55, then the thickness that can calculate phase shift film is 118nm.The permissible range of the variation of the thickness of phase shift film is Thickness relative to the phase shift film calculated is 10 or so scope of positive and negative percentage, and if in the permissible range, then phase shift is covered Film can obtain the effect of sufficient phase shift.
When exposing situation of the light including a plurality of peak wavelengths (there are 3 bright-line spectrums) such as extra-high-pressure mercury vapour lamp, The thickness of the phase shift film to each peak wavelength is calculated, is utilized to divide into the ratio of the energy intensity of the exposure light of each peak wavelength Weighting gained and (being referred to as weighted average) decision phase shift film thickness.Such as using g rays with Pg, h ray with Ph, When i rays have situation of the light source of Pi energy intensity as exposure light source, if the thickness of phase shift film corresponding with g rays respectively Spend for Dg, the thickness of phase shift film corresponding with h rays is Dh, and the thickness of phase shift film corresponding with i rays is Di, then utilizes weighting The thickness D for the phase shift film averagely obtained is D=(Pg × Dg+Ph × Dh+Pi × Di) ÷ (Pg+Ph+Pi).Specifically, if Pg =2, Dg=141nm, Ph=1, Dh=130, Pi=3, Di=118nm, then the thickness D for the phase shift film obtained using weighted average For 128nm.By the thickness D using such a phase shift film obtained using weighted average, even if being to include a plurality of peak wavelengths Exposure light, can also obtain the effect of phase-shift mask well.
As the method for the thickness D that phase shift film is obtained using weighted average, can also apply the exposure to each peak wavelength The value that the energy intensity of light is multiplied by obtained by the sensitivity of the resist of corresponding wavelength is used as the method for average weighted weight, can Obtain better result.
The light light transmittance of translucent phase shift film 2 is set to the value as the contrast of exposed pattern uprises.Specifically For, the light light transmittance under the exposure light of phase shift film 2 is preferably more than 4% and less than 30%.If the printing opacity of translucent phase shift film Rate is less than 4%, then the effect that contrast is improved using phase shift is smaller.If the width W of translucent phase shift film is narrow, because of secondary lobe light And cause the contrast of pattern to reduce, therefore, the light transmittance of translucent phase shifting region is set to it is higher, but if 30% with On, then light shielding ability reduces, so it is impracticable.
When the large-scale phase-shift mask of the present invention includes the situation of following 2nd translucent phase shift films, more preferably translucent phase The light light transmittance for moving film is more than 4% and less than 15%.Its reason is：Due to the 2nd translucent phase shift film light light transmittance compared with It is good to be set to above range, so translucent phase shift film and the 2nd translucent phase shift film can be formed simultaneously, and can be set to productivity compared with High large-scale phase shift film.
As the pattern form of translucent phase shifting region, can suitably be selected according to purposes of large-scale phase-shift mask etc..As The pattern form of such a translucent phase shifting region, such as example in the L＆S pattern forms illustrated in following Fig. 6 (a), Fig. 9 can be enumerated The translucent phase shifting region 4 shown is configured to dot pattern shape of island etc. in transparent region 3.
L＆S pattern forms signal electrode such as preferably can be used as to form gate electrode, source drain electrode, match somebody with somebody The pattern form of the transparency electrode of fine rule of line electrode or formation on opposed base material etc..
Dot pattern shape such as can in the contact hole in forming tft array substrate when be preferably used as hole pattern shape Shape.
In the present invention, the pattern form as translucent phase shifting region, wherein preferably hole pattern form, fine rule Transparency electrode pattern form.
Furthermore Fig. 9 is that the example of the pattern of the translucent phase shifting region in the large-scale phase-shift mask to the present invention illustrates Explanation figure.
As the width of translucent phase shifting region, can suitably be selected according to purposes of large-scale phase-shift mask etc., preferably 1 μm In the range of~5 μm, wherein in the range of preferably 1.0 μm~3.0 μm, it is further preferred that in the range of being 1.5 μm~2.5 μm.
By above-mentioned width be above range in, and the present invention large-scale phase-shift mask in can prevent obvious side peak Produce.
The width of translucent phase shifting region in the so-called present invention refers in Fig. 1 (a), Fig. 5 (a), Fig. 6 (a), Fig. 9 with W The distance of expression.
Herein, the influence to resist caused by the peak of side is illustrated by taking eurymeric resist as an example.As described above, Side peak be because the peak value of secondary lobe and the exposure light through translucent phase shifting region imaging surface mutually strengthen light amplitude and caused by Region.Also, side peak is generally generated in the region in translucent phase shifting region, and it is and the exposure through translucent phase shifting region The luminous intensity of light is compared, and its luminous intensity becomes strong region.
Therefore, when using situation as resist of such as eurymeric resist, producing in translucent phase shifting region Side peak, because the exposure of resist is carried out, so there is the problem of resist surface after exposure produces recess.With above-mentioned Though the resist of recess can play the function of protection lower floor, in the inspection carried out after the development step of resist, have tested Survey the situation for defect.Thus, because the resist of inherently defencive function is also identified as defective because of inspection, cause It can not use, so the problem of productivity for having tft array substrate etc. reduces.
In contrast, because in the situation being set to the width of translucent phase shifting region in above range, side peak can be suppressed Generation, so can suppress resist surface after exposure produces recess.Thus, covered by the large-scale phase shift using the present invention Film, it is productivity the higher person that can make TFT substrate etc..
Also, on the influence caused by the peak of side to resist, when using the situation of negative resist, such as half Side peak in transparent phase shifting region, the exposure of resist are carried out, and resist can be remaining after exposure, therefore, in resist In the inspection carried out after development step, there is the situation for being detected as defect.Also, under having and being difficult to carry out after above-mentioned exposure well The situation of the etching of layer etc..
In contrast, because in the situation being set to the width of translucent phase shifting region in above range, side peak can be prevented Generation, so can suppress exposure after resist remaining.
According to the above, large-scale phase-shift mask of the invention can be above-mentioned in formation in TFT substrate of display device etc. As during structure as the width of translucent phase shifting region preferably with.
As long as the large-scale phase-shift mask of the present invention includes above-mentioned penetrating region and translucent phase shifting region, special limit is had no It is fixed, also can be optionally and with structure than that described above.
As such a structure, for example, such as Figure 10 (a), shown in (b), including formed on transparency carrier 1 photomask 101, And the translucent 2nd translucent phase shift film 102 formed in a manner of covering photomask 101, it can enumerate and be configured with lightproof area 103 and the 2nd translucent phase shifting region 104 mask pattern (it is following, have and the mask pattern is referred to as edge phase shifting region said Bright situation), the lightproof area 103 has been stacked 101 and the 2nd translucent phase shift film 102 of photomask, the 2nd translucent phase Move region 104 to be arranged between lightproof area 103 and penetrating region 3, and be provided only with the 2nd translucent phase shift film 102.At edge The 2nd phase shifting region 104 in phase shifting region, through the 2nd translucent phase shifting region 104 exposure light phase relative to through saturating Cross the phasing back of the exposure light in region 3.
Figure 10 (a) is the general view of another for representing the large-scale phase-shift mask of the present invention, and Figure 10 (b) is Figure 10 (a) AA line profiles.It is ease of explanation also, in Figure 10 (a), and with by the region representation lightproof area of dotted line.
As described above, the phase-shift mask of the present invention is in the range of the width of translucent phase shifting region is above-mentioned 1 μm~5 μm Situation when, influenceed caused by the peak of side it is smaller, can be well by anti-aging drug.Thus, preferably above-mentioned translucent phase Region is moved to by the one photoresist patterning with the width in the range of above-mentioned 1 μm~5 μm.
On the other hand, generally, TFT substrate etc. includes the structure with various width, during fabrication, preferably simultaneously by light Film exposure is hindered, and by the one photoresist patterning with various width.Therefore, penetrating region is only included and with each in phase-shift mask When planting situation of 2 regions of the translucent phase shifting region of width as mask pattern, worry conditions of exposure or use against corrosion Species of agent etc. is more confined from.
For above-mentioned worry, it is contemplated that in the phase-shift mask of the present invention, further setting only includes being formed in transparent base The lightproof area of photomask on plate.
However, the requirement of the High precision of pattern in recent years uprises, and have and resisted caused by exposing the diffraction of light The situation that the influence of erosion agent can not be ignored.As the influence to above-mentioned resist, specifically, can enumerate due to because of exposure light Diffraction and secondary lobe is produced on penetrating region and the border of lightproof area, so the end face of resist does not have required steepness, And it is difficult to make the contrast of mask pattern abundant.
On the other hand, when the phase-shift mask of the present invention includes the situation of above-mentioned edge phase shifting region, due to the fact that, And the end face of resist can be made for more precipitous shape, i.e., lift the contrast of pattern of resist.
Figure 11 is the explanation figure illustrated to the edge phase shifting region in the present invention, and exposure light 5 is passed through into large-scale phase shift The penetrating region 3 of mask 1 and the optical ampeitude in the imaging surface imaging on resist is shown in Figure 11 (b) dotted line 110, will Light intensity distributions are shown in Figure 11 (c) dotted line 113.If the diffraction without exposure light, optical ampeitude should turn into square in imaging surface Shape, but diffraction because of exposure device (non-icon) etc. and turn into hang mitriform extension optical ampeitude.On the other hand, Through the phasing back of the exposure light 5 of Figure 11 (a) the 2nd translucent phase shifting region 104, and as shown in Figure 11 (b) dotted line 111 As turn into negative optical ampeitude.By such as by such a negative optical ampeitude 111, the optical ampeitude 110 with penetrating region 3 Expansion light amplitude offset as position configure the 2nd translucent phase shifting region 104 and addition phase shift light and prevent from exposing The distribution of amplitudes of the light of the distribution of amplitudes extension of light is shown in Figure 11 (b) solid line 112.Also, by including with added with phase shift light The intensity distribution of the light of phase shift light is shown in Figure 11 (c) solid line 114 corresponding to the distribution of amplitudes 112 of light.If only compare through area The light intensity distributions 113 in domain, with including phase shift light light intensity distribution 114, then with the position of the 2nd translucent phase shifting region 104 Put accordingly, luminous intensity reduces, and suppresses the extension of luminous intensity.The part that the luminous intensity is reduced is represented with oblique line portion 115.Separately On the one hand, in the outside that luminous intensity reduces, it was observed that referred to as (below, there are the feelings at the side peak in referred to as edge phase shifting region at side peak Shape) luminous intensity become strong part (Figure 11 (c) 116) again.Above-mentioned side peak is carried making the light transmittance of the 2nd translucent phase shifting region High time-varying is strong, but must be suppressed to the photostable level of resist.
Hereinafter, the details of the edge phase shifting region in the present invention is illustrated.
The pattern form of above-mentioned edge phase shifting region is suitably selected according to purposes of large-scale phase-shift mask etc..In the present invention In, the big width of pattern form preferably with more above-mentioned translucent phase shifting region, be more than 5 μm width pattern shape Shape.On the pattern form of above-mentioned edge phase shifting region, specifically, line pattern shape, L＆S pattern forms, point shape can be enumerated Shape etc..
The width of lightproof area in above-mentioned edge phase shifting region can be appropriate according to purposes of phase-shift mask of the present invention etc. Selection.
As the width of the 2nd translucent phase shifting region in the present invention, as long as the expansion of the luminous intensity of penetrating region can be suppressed Exhibition, and can be required pattern form by anti-aging drug, just it is not particularly limited.
As the width of such a 2nd translucent phase shifting region, preferably less than 3.5 μm, wherein, preferably less than 2.5 μm, It is further preferred that for less than 2.0 μm.Its reason is：When the width of above-mentioned 2nd translucent phase shifting region exceedes the situation of above-mentioned value, partially The scope being related to from the effect of phase shift, and the possibility that the effect for having the contrast for making exposing patterns and strengthening reaches capacity.Also, its Reason is：In the 2nd translucent phase shifting region between penetrating region and lightproof area, not with the light amplitude of penetrating region Having a great influence for peak value (the side peak in edge phase shifting region) of the light intensity distributions for the optical ampeitude for offseting and remaining, it is against corrosion Agent produces recess etc. to producing reaction through light through the 2nd translucent phase shifting region in the pattern form of resist, and It is in distress so that the pattern form of resist is the possibility of required shape.
Also, in the present invention, due to can be by including the 2nd translucent phase shifting region, and suppress the light intensity in penetrating region The extension of degree, so the lower limit of the width on the 2nd translucent phase shifting region, as long as the journey of translucent phase shift film can be formed Degree, is just not particularly limited, preferably more than 0.25 μm, wherein, preferably more than 0.5 μm, it is further preferred that for more than 0.8 μm.Its reason It is that alignment precision that can be good sets the 2nd translucent phase shifting region.Also, its reason is：In the situation less than above-mentioned value When, the light quantity of phasing back is reduced, and effective less possibility.
Also, when the width b of above-mentioned 2nd translucent phase shifting region is more than 0.5 μm and less than 2 μm of scope, the effect of phase shift Fruit is most obvious.
Herein, the width b of the 2nd translucent phase shifting region is abreast measured from penetrating region and the with transparency carrier surface The border of 2 translucent phase shifting regions is to the beeline obtained by the distance on the 2nd translucent phase shifting region and the border of lightproof area. Also, in Figure 11 (a), it is the distance represented with b.
Also, as shown in Figure 12 (a), in the 2nd translucent phase of phase-shift mask of the invention in adjacent edge phase shifting region Move between region 104 when including the situation of penetrating region 3, as the width a of above-mentioned penetrating region 3, preferably more than 1 μm and 6 μ Below m.Herein, the resolution pole of large-scale projection type exposure device is limited to 3 μm or so, the problem of large-scale phase-shift mask of the invention It is to improve the contrast of exposing patterns to the pattern of drawing under above-mentioned resolution limit (3 μm).
Because when the width a of above-mentioned penetrating region 3 is more than 6 μm of situation, produced because of the resolution limit of exposure device Influence it is smaller, so the present invention large-scale phase-shift mask DeGrain.Also, the width a in above-mentioned penetrating region 3 is less than During 1 μm of situation, even if exposing patterns can not also be carried out solution picture by the effect of the phase shift of the addition present invention.Herein, penetrating region 3 width a is the diameter of the maximum inscribed circle of the penetrating region shape as the object in transparency carrier plane, if object penetration Region is shaped as rectangle, then the length of short side is the width of penetrating region.
Herein, the resolution limit of above-mentioned large-scale projection type exposure device is in above-mentioned large-scale projection type exposure device During the situation being exposed using binary mask, it can comparably regard the binary mask with can stably solve picture in exposure area as Penetrating region width minimum value (following, to there is the situation of the referred to as width of resolution limit).
The phase-shift mask of the present invention can be covered in the situation used in the lump with large-scale projection type exposure device to above-mentioned binary Pattern of drawing below the width of the resolution limit of film carries out solution picture.
As the width for drawing pattern of the phase-shift mask of the present invention, preferably relative in large-scale projection type exposure device The width of resolution limit of binary mask be less than 100%, wherein preferably less than 85%, and preferably more than 30%, Wherein it is preferably more than 40%.Its reason is：In situation of the above-mentioned width for drawing pattern less than above range, have and be difficult to Carry out solving the possibility of picture in itself to drawing pattern.Also, its reason is：Exceed above range in the above-mentioned width for drawing pattern Situation when, have the possibility for being difficult to give full play to the effect using phase shift.The width for drawing pattern in above-mentioned phase-shift mask When spending the situation equal with the width of resolution limit, compared with the situation being exposed using binary mask, resist can be made Shape it is good.
The above-mentioned width for drawing pattern width that can be based on the intrinsic resolution limit of large-scale projection type exposure device and anti- The sensitivity of agent is lost, is adjusted by the width of penetrating region and the width of the 2nd translucent phase shifting region of the phase-shift mask of the present invention Degree, translucent phase shift film light transmittance etc. and determine.
Herein, as shown in Figure 12 (b), the width of the penetrating region of binary mask is abreast measured with transparency carrier surface From the beeline obtained by a border to the distance on another border for the lightproof area abutted with a penetrating region, and it is with d tables The distance shown.
Also, the width for drawing pattern of so-called phase-shift mask refer to using penetrating region and the 2nd translucent phase shifting region and Draw the width of the pattern to resist.
Next, the photomask for edge phase shifting region and the 2nd translucent phase shift film are illustrated.
As the photomask for lightproof area, it is necessary to which light transmittance is less than 0.1% and easily carried out at the exposure wavelength The material of pattern processing.As the material of such a photomask, chromium, chromium compound, molybdenum silicides, tantalum compound can be used, compared with It is good that good pattern formation can be carried out using Wet-type etching for use and uses actual achievement also more based on chromium or chromium compound The photomask of composition.Chromium compound is used as using the chromium nitride that optical activity is higher and the thickness of photomask is relatively thin is hidden.If than Compared with the photomask of chromium and the photomask of chromium nitride, then using the mask blank for having easy film forming and the higher chromium photomask of versatility It is readily available, so preferably.Specifically, when the film of crome metal to be set to the situation of photomask, to make the saturating of exposure light Light rate is less than 0.1%, and it is more than 70nm persons to use thickness.On the other hand, if making thickness thicker, etching period increase, Processability reduces, and therefore, is generally used under below 150nm thickness.
The width of lightproof area can be according to the appropriate selection such as purposes of phase-shift mask of the present invention.
Next, the 2nd translucent phase shift film for edge phase shifting region is illustrated.
2nd translucent phase shift film is to be formed in a manner of the side and upper surface that cover above-mentioned photomask in transparency carrier On.
The light transmittance of 2nd translucent phase shift film is without producing side peak in edge phase shifting region in the effect using phase shift In the range of be set as value as the contrast of exposed pattern uprises.Specifically, the exposure of the 2nd translucent phase shift film Light light transmittance under light is preferably more than 4% and less than 15%.If the light transmittance of the 2nd translucent phase shift film is less than 4%, profit It is smaller that the effect of contrast is improved with phase shift, if the light transmittance of phase shift film is more than 15%, the effect of phase shift is too strong and causes Submaximum (the side peak in edge phase shifting region) uprises in lightproof area, so as to produce the possibility as defect.
Because the thickness of the 2nd translucent phase shift film, material can be identical with thickness, the material of above-mentioned translucent phase shift film, therefore And omit explanation herein.In the present invention, thickness, the material of preferably above-mentioned translucent phase shift film and the 2nd translucent phase shift film Expect identical.Its reason is that translucent phase shift film and the 2nd translucent phase shift film can be formed simultaneously.
In the present invention, by selection chromium or chromium nitride as photomask, selective oxidation chromium (CrO) or nitrogen oxidation chromium (CrON) the 2nd translucent phase shift film is used as, photomask and the 2nd translucent phase shift film can be processed with same etching machines, And using the cerous nitrate system wet etchant with good pattern processability to photomask and the 2nd translucent phase shift film Both carry out Wet-type etchings, larger the advantages of in cost.Also, in the present invention, on by the 2nd translucent phase shift film to cover The mode of the side and upper surface of stating photomask is formed on the transparent substrate, so when carrying out Wet-type etching, can suppress to etch The photomask of lower floor.
Also, as long as the edge phase shifting region in the present invention includes above-mentioned photomask and the 2nd translucent phase shift film, just without especially Limit, in addition, also can suitably select and add required structure.As such a structure, anti-reflective film can be enumerated.
Herein, in common large-scale projection type exposure device, it is difficult to only irradiate directional light as exposure light, mostly exposing A part for light light includes the situation of the light with first retainer.And then in pattern edge diffraction and the light or film that fold into The reflected light on border etc. projects as veiling glare.Also, such a veiling glare is due to the irradiation in large-scale projection type exposure device It is position, different from actually arriving in the position of resist, so have the screening for also exposing the phase-shift mask with that need not expose originally The worry of resist corresponding to light region.
Also, in the present invention, lightproof area has to be laminated with photomask and is laminated with photomask on the transparent substrate The structure of 2nd translucent phase shift film.Also, the 2nd translucent phase shift film has the thickness D that phase difference is π.Thus, for example using When the phase-shift mask of the present invention is by make the situation of the one photoresist patterning of tft array substrate etc., it is believed that above-mentioned veiling glare The following behavior of performance.First, the transparency carrier of phase-shift mask, warp are passed through from the veiling glare of large-scale projection type exposure device irradiation Metal electrode of tft array substrate etc. reflects and turns into reflected light.Next, the reflected light of above-mentioned veiling glare is incident to shading region The 2nd translucent phase shift film in domain, reflected through photomask and turn into the 2nd reflected light, and again from the 2nd translucent phase shift film outgoing. Thus, it is incident to the reflected light of the veiling glare of the 2nd translucent phase shift film of above-mentioned lightproof area, with being reflected through photomask and from the The phase difference of 2nd reflected light of the veiling glare of 2 translucent phase shift film outgoing is 2 π.Therefore, because in the 2nd translucent phase shift film Surface, above-mentioned reflected light mutually strengthen with above-mentioned 2nd reflected light, so have influence caused by veiling glare to resist more Obvious worry.
Above mentioned problem is the problem of generation because of the Rotating fields of the lightproof area in the present invention.
In the present invention, for the viewpoint of veiling glare countermeasure when exposure, it may be desirable to which lightproof area has anti- Reflection function.The lightproof area 103 that uses has as shown in Figure 11 (a), in the present invention is laminated with photomask on transparency carrier 1 101 and the structure of the 2nd translucent phase shift film 102 is laminated with photomask 101, but because the 2nd translucent phase shift film 102 has There is the thickness D that phase difference is π, so the exposure light (the 2nd reflected light of veiling glare) and the 2nd reflected by the surface of photomask 101 The phase difference of the reflected light (reflected light of veiling glare) on the surface of translucent phase shift film 102 mutually strengthens for 2 π.Should to mitigate Influence, the anti-reflective film 105 for including semi-transparent film can be also set between photomask and the 2nd translucent phase shift film.By including Anti-reflective film 105, can (light that photomask is reflected be (miscellaneous by the light reflected with the light that photomask is reflected with anti-reflective film 2nd reflected light of astigmatism) reflected light with the veiling glare on anti-reflective film surface) mode that mutually weakens sets optical path length, prevents Only phase difference turns into 2 π and mutually strengthened.
As the anti-reflective film in the present invention, as long as there is anti-reflection function, and the photomask of lightproof area may be formed at Between the 2nd translucent phase shift film, just it is not particularly limited, can be preferably with metal film, metallic compound film etc..
As the material of above-mentioned anti-reflective film, can enumerate chromium oxide (CrO), nitrogen oxidation chromium (CrON), chromium nitride (CrN), Titanium oxide (TiO), tantalum oxide (TaO), nickel oxide aluminium (NiAlO) etc., wherein can be preferably with chromium oxide (CrO), nitrogen oxidation Chromium (CrON).
The thickness of above-mentioned anti-reflective film is with as making the light that the light that photomask is reflected is reflected with anti-reflective film mutual The mode of the optical path length of decrease designs.
As the thickness of such a anti-reflective film, the light preferably reflected by photomask passes through anti-reflective film, and makes screening The phase difference for the light that the light that light film is reflected is reflected with anti-reflective film turns into the thickness in the range of π ± 10, wherein, preferably As the thickness in the range of π ± 5, it is further preferred that being the thickness as π.
The light that the light that its reason is to be reflected photomask is reflected with anti-reflective film preferably weakens, and can be preferable Ground prevent because of veiling glare and caused by it is abnormal.
The specific thickness of above-mentioned anti-reflective film is suitably selected according to material of anti-reflective film etc., is not particularly limited, compared with It is good be 0.01 μm~0.1 μm in the range of, wherein, in the range of preferably 0.02 μm~0.05 μm.Its reason is：Less than During the situation of above range, there is a possibility that to be not easy to form anti-reflective film with uniform thickness, and its reason is：More than During the situation of above range, it is more to there is a possibility that the film formation time of anti-reflective film, cost expenses obtain.
Also, as anti-reflective film, in addition to the phase person of the light passed through using adjustment, such as also can be used metal film etc. Surface it is roughened and assign make light spread function person.
As the anti-reflective shooting method on the surface of the 2nd translucent phase shift film, can also be set on the surface of the 2nd translucent phase shift film Translucent low-reflection film.Especially when the 2nd translucent phase shift film is the situation of nitrogen oxidation chromium, having has metal light on surface The situation in pool, in the situation, the low reflection layer containing chromium oxide is more effective.
In the large-scale phase-shift mask of the present invention, in the situation including above-mentioned edge phase shifting region, the resist that uses Side peak preferably in by above-mentioned edge phase shifting region is influenceed less person.As described above, in the present invention, translucent phase-shifted region Domain is not likely to produce side peak due to can be by the width being set in the range of 1 μm~5 μm, so by use with above-mentioned side The resist of formula selection, shape that can be better is by one photoresist patterning.
As the purposes of the large-scale phase-shift mask in the present invention for only including above-mentioned penetrating region and phase shifting region, can enumerate To the large-scale phase-shift mask for the fabrication patterning that will illustrate in the item of the pattern form of above-mentioned phase shifting region.
Also, the purposes of large-scale phase-shift mask during situation including above-mentioned edge phase shifting region is not particularly limited, preferably For to using translucent phase shifting region by the less one photoresist patterning of width, using edge phase shifting region by the larger light of width Resistance patterning.For example, as shown in above-mentioned Figure 10 (a), (b), can enumerate：To utilize translucent phase shifting region 4 by the saturating of fine rule The one photoresist patterning of prescribed electrode, using edge phase shifting region by the one photoresist patterning of gate electrode or source drain electrode Large-scale phase-shift mask；Or although not shown, but to using translucent phase shifting region by the one photoresist patterning of contact hole, utilize side Edge phase shifting region is but and unlimited by large-scale phase-shift mask of the one photoresist patterning of above-mentioned gate electrode or source drain electrode etc. Due to such.
(manufacture method)
Fig. 3 is the profile for the manufacturing step for representing the large-scale phase-shift mask of the present invention.
To make the large-scale phase-shift mask 1 of present embodiment, first, prepare to be laminated with translucent phase on transparency carrier 1 Move the photomask blank 41 (Fig. 3 (a)) of film 2.Transparency carrier 1 is usually using the conjunction through optical grinding that thickness is 8mm~12mm Into quartz.The translucent phase shift film 2 of photomask blank 41 is if the individual layer of nitrogen oxidation layers of chrome or the light transmittance adjustment layer of chromium nitride And two layers of the phase shift film of nitrogen oxidation chromium, then utilize sputtering method film forming.
Next, the translucent phase shift film 2 of above-mentioned photomask blank 41 is patterned according to usual way.That is, half Photonasty resist corresponding with the exposure wavelength of laser beam describing device is coated with transparent phase shift film 2, is toasted after coating both Fix time, form photoresistance film in uniform thickness.Next, required pattern is drawn photoresistance film using laser describing device, and Developed, and form resist 42 (Fig. 3 (b)).Generally, translucent phase shifting region 4 is the TFT transistors of liquid crystal display panel Wiring pattern or contact hole pattern, gate pattern etc., optionally forming position is used mutatis mutandis mark.
Next, etching and removing the translucent phase shift film exposed from resist 42, the resist of remaining is peeled off and removed, And obtain the transparency carrier 1 (Fig. 3 (c)) of the translucent phase shift film for the shape for being formed as translucent phase shifting region 4 with pattern.It is semi-transparent The etching of bright phase shift film 2 can apply wet etching or dry etching method, but due to as described above with flat-panel monitor The maximization of the middle photomask used, and in dry-etching, the costly cost that maximizes of Etaching device, at the same it is also difficult To control the uniformity of the etching in large area, so in terms of the cost, preferably Wet-type etching.If translucent phase shift film 2 be the film for including chromium based material, then can be used in ammonium ceric nitrate and be added with the wet etchant of chloric acid and carry out figure well Case is formed.
Manufacturing method according to the invention, due to carrying out the pattern of translucent phase shift film using the Wet-type etching of 1 step Formed, so the effect for suppressing the manufacturing cost of large-scale phase-shift mask is larger.
, can be by being used in base on transparent base in the situation for the phase-shift mask that manufacture includes above-mentioned edge phase range Layer has photomask and is optionally laminated with the 2nd photomask blank of anti-reflective film, and photomask etc. is etched into predetermined pattern Afterwards, translucent phase shift film is formed into the surface entire surface in sides such as the photomasks of transparency carrier, and prepares photomask blank.
Also, when etching translucent phase shift film, the figure of translucent phase shifting region and the 2nd translucent phase shifting region is etched into Case.
Because the forming method and engraving method that can make photomask and anti-reflective film are identical with translucent phase shift film, so Omit explanation herein.
(other)
The phase-shift mask of the present invention is the one photoresist patterning will be formed for the pattern of above-mentioned tft array substrate etc..
The resist used in the lump with the phase-shift mask of the present invention can be according to the electrode material, developer solution, projection of TFT substrate Type exposure machine etc. suitably selects, and is not particularly limited.
Such as the exposure machine of Nikon (Nikon) company system is being used, using AZ1500 as resist, to make as exposure machine During by the use of AZ300MIF as developer solution, due to the influence for exposing light for the part that the light transmittance that can make phase-shift mask is less than 5% It is smaller, be difficult by exposure intensity be less than 5% light draw resist, so be not easy to exposure intensity be distributed in side peak Reaction is produced, and the patterning of resist can be carried out well.
As long as also, the thickness of resist for using the present invention the patterned required shape of phase-shift mask degree, Just it is not particularly limited, in the range of preferably 1.0 μm~10.0 μm, wherein in the range of preferably 1.2 μm~5.0 μm, it is further preferred that In the range of 1.5 μm~4.0 μm.By the thickness of resist is made in above range, using the phase-shift mask of the present invention Form the photoresistance pattern with required shape.
Furthermore the resist used in the lump with the phase-shift mask of the present invention is not limited to the above situation.
[embodiment]
＜ is on translucent phase shifting region ＞
(embodiment 1)
Fig. 4 (a) is that exposure intensity when obtaining the situation for changing the width W of phase shifting region using exposure emulation is distributed Change the curve of the result of gained.Fig. 4 (b) is the curve of the central portion of enlarged representation Fig. 4 (a) light intensity distributions.Fig. 4 (c) It is the luminous intensity in each exposure intensity distribution central portion and the height at side peak for the change for representing the width W for Fig. 4 (a) phase shifting regions The curve of degree.
Fig. 5 utilizes exposure intensity distribution of the exposure simulation to the large-scale phase-shift mask using the present invention, figure identical with utilization The curve that the exposure intensity distribution of the binary mask of case is compared.
Fig. 4 (a) will be utilized as shown in Fig. 5 (a) using the width W of translucent phase shifting region as parameter and using exposure simulation The large-scale phase-shift mask 50 for including the square translucent phase shifting region 4 that the one side that is surrounded of penetrating region 3 is W exposed Light intensity distributions (being referred to as exposure intensity distribution) on the imaging surface of light time are obtained, and draw exposure intensity distribution institute along CC sections The curve obtained.Width W as the parameter of exposure simulation is 10 μm, 8 μm, 6 μm, 5 μm, 4 μm, 3 μm, 2 μm, 1 μm of selection.Exposure Exposure wavelength in simulation is 365nm, and the optical condition of exposure device is that the more of promising lens projects Exposure mode are carried in setting The condition of the liquid crystal exposure apparatus (Nikon (Nikon) system) of lens projects optical system, the light transmittance of translucent phase shift film are set to 5.2%.The outermost for the curve that Fig. 4 (a), the expression exposure intensity of (b) are distributed is 10 for the width W with translucent phase shifting region Curve corresponding to μm, below, represent to be distributed to 1 μm of corresponding exposure intensity of width with 8 μm of corresponding exposure intensities of width and divide The concave curve of cloth arranged side by side successively to inner side nesting shape.
Exposure intensity 51 on imaging surface corresponding with the central portion of translucent phase shifting region 4 is in translucent phase shifting region In the range of 4 width W is 10 μm to 3 μm, 4% to 10% is showed when the exposure intensity that will transmit through region is set to 100% Exposure intensity, there is approximately fixed light shielding ability.If width W turns into 2 μm, the exposure intensity of central portion turns into 23%, if Width W turns into 1 μm, then the exposure intensity of central portion turns into 71%, and light shielding ability reduces.The situation is shown in Fig. 4 (c) broken line Curve 52.
Reference picture 4 (b), translucent phase-shift mask exposure intensity distribution side peak height be from penetrating region 3 to When exposure intensity distribution is observed in translucent phase shifting region 4 successively, the light transmittance of initial minimum 53 and next maximum are utilized The poor absolute value 55 of 54 light transmittance is obtained.The width W for making translucent phase shifting region 4 is changed to 1 μm from 10 μm and obtained Result obtained by the height at side peak is shown in Fig. 4 (c) broken line curve 56.Width W of the height at side peak in translucent phase shifting region To show 3 or so fixed value of about percentage in the range of 10 μm to 5 μm, when width is less than 5 μm, the reduction of side peak heights, if Width W is 4 μm to 1 μm, then does not observe side peak, the height at side peak is zero.
Above exposure simulation result is summarized, if due to the width W of translucent phase shifting region is set into less than 5 μm, side peak Height reduce, so following problem can be mitigated, i.e. the recess or resist on resist surface caused by the influence at side peak Residual etc. is judged as defect in photoresistance pattern inspection, and as the obstacle of semiconductor production step.And then by will be semi-transparent The width W of bright phase shifting region is set to less than 4 μm, without producing side peak (height at side peak is zero), is led so as to eliminate because of side peak The problem of the above-mentioned semiconductor production step caused.On the other hand, if the width of translucent phase shifting region is set into 2 μm, no side Peak, but the central luminous intensity of exposure intensity distribution is 23%, and exposure imaging condition must be above adjusted using.And then When the width of phase shifting region is 1 μm of situation, the central luminous intensity of exposure intensity distribution reaches 71%, and it is larger to hide rotary light performance Ground reduces, so be not suitable for practicality.Wherein, result above is the situation on translucent phase-shift pattern to be set to square, When phase-shift pattern to be set to the situation in line and gap, even if the width of translucent phase shifting region is set into 1 μm, region central portion Luminous intensity is also 30%, be can be used under exposure, the adjustment of development conditions.The situation is represented with embodiment 2.
(exposure simulation result and exposure intensity distributed model)
Illustrate Fig. 4 (a), shown in (b) using exposure simulation exposure intensity distribution, with Fig. 1, exposure illustrated in fig. 2 The relation of light intensity distributions model.What the exposure intensity during situation that the peak value of Fig. 2 (b) explanation secondary lobe is fully separated by was distributed shows The shape of meaning linearity curve 26 is that exposure intensity is reduced with close to translucent phase shifting region from penetrating region, in exposure intensity After zero, side peak 29a, 29b as maximum are formed.On the other hand, in Fig. 4 (b), the width of translucent phase shifting region W is exposure intensity with being reduced from penetrating region to translucent phase shifting region is close for 10 μm of exposure intensity distribution, is being exposed After luminous intensity obtains minimum, there is side peak 54a, 54b, feature and explanation exposure intensity distribution using the curve of exposure emulation Schematic graph 26 it is fully consistent, noncontradictory in the explanation model of the exposure intensity distribution in Fig. 1, Fig. 2, so it may be said that It is more good.Furthermore the minimum of the exposure intensity in exposure simulation be not zero such as the schematic diagram that exposure intensity is distributed be by In the deviation (i.e. aberration) of the ideal performance from imaging len.
Next, according to exposure simulation result obtain exposure intensity distribution from the border of translucent phase shifting region to side peak Distance, obtain side peak height switch to reduce translucent phase shifting region width Wp.Due to the side of translucent phase shifting region Boundary is located at 8.5 μm and 16.5 μm of position in imaging surface, and the position of maximum 54a, 54b of the exposure intensity distribution in emulation is 11.1 μm and 13.8 μm, so the distance from the border of translucent phase shifting region to side peak is 2.8 μm.In translucent phase shifting region Width W be the height at side peak maximum (Fig. 2 (b) institutes under the configuration as the peak value (phasing back) of the secondary lobe of exposure light is overlapping The state shown), if width W is small compared with its, overlapping more, the height reduction at side peak of the positive part of secondary lobe.That is, translucent The width W of phase shifting region is interior compared with 2 times of narrow scopes (W ＜ Wp) of the distance from border to side peak, the height reduction at side peak.Because The distance from border to side peak obtained in exposure simulation is 2.8 μm, so the overlapping width W of the peak value of secondary lobe is 5.6 μm.Root According to Fig. 4 (c) exposure simulation result, the width Wp that the height at side peak starts the translucent phase shifting region reduced is 5 μm, with basis 5.6 μm of the value that distance from border to side peak calculates is consistent.
(the contrast improvement of embodiment 1)
Fig. 5 is to utilize exposure simulation to semi-transparent when the width W being distributed as the good exposure intensity without side peak is 4 μm Result of the improvement of the contrast of bright phase-shift mask compared with binary mask.Including one side will be 4 μ along shown in Fig. 5 (a) Exposure intensity distribution on the imaging surface of the CC sections of the phase-shift mask of m square translucent phase shifting region is shown in Fig. 5 (b) Solid line.Exposure intensity distribution on the imaging surface of the binary mask of square lightproof area including identical size is shown in Fig. 5 (b) dotted line.Judged according to curve, it is known that the width of the exposure intensity distribution of binary mask is narrower than phase-shift mask Exposure intensity is distributed, and pattern is thinner.Specifically, if it is 30% that photosensitive level is set into exposure intensity, large-scale phase-shift mask The width of exposing patterns be 4.1 μm, on the other hand, the width of the exposing patterns under the phase photosensitive of binary mask is horizontal is 3.7μm.That is, the decline that translucent phase-shift mask of the invention is distributed the exposure intensity of pattern boundaries is precipitous (even if contrast Improve), and have the effect for preventing that the pattern width transferred using exposure from being changed.
(embodiment 2)
Fig. 6 is the effect and previous two that the contrast being distributed to the exposure intensity of the large-scale phase-shift mask of the present invention is lifted The explanation figure that first mask is compared.Fig. 6 (a) is the line and gap (L/S) pattern for representing the large-scale phase-shift mask of the present invention Plan, (b) are the line for the binary mask for being denoted as prior art and the plan of space pattern, (c) be compare (a) with (b) figure of the exposure intensity distribution on the imaging surface of the mask shown in.
Also, table 1 be to the present invention large-scale phase-shift mask exposure intensity be distributed contrast lifted effect with previously The table that is compared of binary mask.
The pattern of Fig. 6 (a) large-scale phase-shift mask of the invention is the line and space pattern of 4 μm of spacing, translucent phase shift The width W in region 3 is 1 μm, and the width a in the penetrating region 4 that the both sides of translucent phase shifting region 3 are adjacently set is 3 μm.Half The light transmittance of transparent phase shift film is 5.2%, and phase inverts π (180 degree) with respect to the light of penetrating region.Furthermore light transmittance It is that the light transmittance that will transmit through region 6 is set to 100% and calculated.
The pattern of Fig. 6 (b) binary mask as comparative example 1 is the line and space pattern of 4 μm of spacing, lightproof area 63 The width of width and translucent phase shifting region 3 be all 1 μm, the width of penetrating region 64 is 3 μm.
Fig. 6 (c) be by simulation obtain and overlapping earth's surface show using the present invention phase-shift mask 60 and comparative example 1 two The curve of exposure intensity distribution on first mask 61 and the imaging surface for the result being exposed by light exposure device, exposure device Light source be with the calculating of 3 wavelength mixing light sources of g rays, h rays, i rays.The longitudinal axis of curve is that the exposure on imaging surface is strong The maximum of degree is normalized to 1 and is indicated, and the transverse axis of curve represents the position on imaging surface.Will with it is large-scale shown in Fig. 6 (a) The exposure intensity distribution of position corresponding to the AA sections of phase-shift mask is shown in exposure intensity distribution curve 65.Also, by Fig. 6 (b) institutes It is bent that the exposure intensity distribution of position corresponding with the binary mask as comparative example 1 BB sections that is showing is shown in exposure intensity distribution Line 66.
The maximum of the light intensity distributions of the exposure intensity distribution curve 65 of large-scale phase-shift mask shown in Fig. 6 (c) is 0.740, minimum value 0.306, the poor contrast as maxima and minima is 0.434.On the other hand, as existing skill The maximum of the light intensity distributions of the exposing light intensity distribution curve 66 of the binary mask of art is 0.782, minimum value 0.399, Poor contrast as maxima and minima is 0.383.That is, the contrast of the exposure light on the imaging surface of previous binary mask Spend for 0.383, on the other hand, the contrast of the exposure light of large-scale phase-shift mask of the invention is 0.434, and contrast is higher by 0.051, for the ratio of contrast, about 13% improvement can be observed.By the result it is blanket be recorded in the large-scale phase of table 1 Move in the effect of mask.
[table 1]
The effect of large-scale phase-shift mask
According to above exposure simulation result, the present invention can be limited and properly configured translucent by large-scale mask The width of phase shifting region, and improve the contrast of the distribution of the exposure intensity on imaging surface, so as to be stably formed finer figure Case.
＜ is on edge phase shifting region ＞
(contrast on exposure intensity distribution)
Figure 12 is that the exposure intensity of the edge phase shifting region (reference example 1) in the large-scale phase-shift mask to the present invention is distributed Explanation figure of the effect of contrast lifting compared with previous binary mask (comparative example 2).Figure 12 (a) is to represent to include side The line of mask (reference example 1) and the plan of space pattern of edge phase shifting region, Figure 12 (b) is be denoted as prior art two The line of first mask (comparative example 2) and the plan of space pattern, Figure 12 (c) are to the mask shown in Figure 12 (a) and Figure 12 (b) The figure that exposure intensity distribution on imaging surface is compared.
Also, the contrast that table 1 is the exposure intensity distribution to the mask (reference example 1) including edge phase shifting region is lifted Table of the effect compared with previous binary mask (comparative example 2).
The pattern of Figure 12 (a) 1 edge phase shifting region as a reference example is the line and space pattern of 4 μm of spacing, is passed through The width a in region 3 is 3 μm.The width b of the 2nd translucent phase shifting region 104 adjacently set in the both sides of penetrating region 3 is 0.4 μm, light transmittance 5.2%, phase is inverted with π (180 degree).Also, the width of lightproof area 103 is 0.2 μm, light transmittance is 0%.Furthermore the light transmittance in each region is that the light transmittance that will transmit through region 3 is set to 100% and calculated.
The pattern of Figure 12 (b) binary mask as comparative example 2 is the line and space pattern of 4 μm of spacing, penetrating region 64 width d is 3 μm, and the width e of lightproof area 63 is 1 μm.
Figure 12 (c) is to represent the curve by the result for obtaining the exposure results using exposure device is emulated, exposure device Light source be with the calculating of 3 wavelength mixing light sources of g rays, h rays, i rays.The longitudinal axis of curve is will to pass through area on imaging surface The maximum of the exposing light intensity in domain is normalized to 1 and is indicated, and the transverse axis of curve represents the position on imaging surface.Will be with Figure 12 (a) the exposing light intensity distribution of the large-scale phase-shift mask of position corresponding to AA sections is shown in exposing light intensity distribution curve 131. Also, the exposing light intensity distribution of the binary mask of position corresponding with Figure 12 (b) BB sections is shown in exposing light intensity distribution Curve 132.
The maximum of the light intensity distributions of large-scale phase-shift mask exposing light intensity distribution curve 131 shown in Figure 12 (c) is 0.747, minimum value 0.324, the poor contrast as maxima and minima is 0.423.On the other hand, as existing skill The maximum of the light intensity distributions of the exposing light intensity distribution curve 132 of the binary mask of art is 0.782, minimum value 0.399, Poor contrast as maxima and minima is 0.383.That is, the contrast of the exposure light on the imaging surface of previous binary mask Spend for 0.383, on the other hand, the contrast of the exposure light of large-scale phase-shift mask of the invention is 0.423, and contrast is higher by 0.04, for the ratio of contrast, about 10% improvement can be observed.By the result it is blanket be documented in the large-scale phase of table 2 Move in the effect of mask.
[table 2]
The effect of large-scale phase-shift mask
According to above exposure simulation result, the present invention can properly configure the 2nd translucent phase shifting region in large-scale mask, Improve the contrast of the exposure intensity distribution on imaging surface, so as to be stably formed finer pattern.
(on the resolution limit of exposure machine and the relation for drawing pattern of phase-shift mask)
The making ＞ of ＜ phase-shift masks
Preparation is sequentially laminated with the synthetic quartz (transparency carrier) that thickness is 10mm, the chromium film (shading that thickness is 100nm Film) and thickness be 25nm chromium oxide film (anti-reflective film) commercially available photomask blank, on anti-reflective film be coated be adapted to Photonasty resist, given time is toasted after coating, and form photomask photoresistance film in uniform thickness.Next, by Laser describing device, draws above-mentioned photomask the pattern of lightproof area with photoresistance film, and is developed, and forms photomask use Resist.
Next, being used in the wet etchant that chloric acid was added with ammonium ceric nitrate, etch and remove and used from photomask The anti-reflective film and photomask that resist exposes, the resist of remaining is peeled off and removed, and obtained band pattern and be formed as shading region The photomask of the shape in domain and the substrate of anti-reflective film.
Next, make the photomask that nitrogen oxidation chromium film (the 2nd translucent phase shift film) formed in band through pattern using sputtering method And the entire surface film forming of the substrate of anti-reflective film.
Next, by the 2nd pattern forming step, using its lightproof area position with the shading film figure as lower floor Alignment, using with photomask resist identical forming method, formed the 2nd translucent phase shift film photoresistance film.Next, by By laser beam describing device, the 2nd translucent phase shift film is drawn with photoresistance film makes the 2nd translucent phase shifting region and lightproof area pair After the pattern in accurate region, developed, and obtain the 2nd translucent phase shift film resist formed through pattern.
Next, etch and removed from the 2nd translucent phase shift film with against corrosion in the same manner as above-mentioned photomask and anti-reflective film The 2nd translucent phase shift film that agent is exposed, and obtain pattern and be processed as making what shading film figure was aligned with the 2nd translucent phase shifting region 2nd translucent phase shift film of shape.Next, the photoresistance film of the 2nd translucent phase shift film of remaining is peeled off, removed.By Above step, and obtain be configured with penetrating region (line width is 1.9 μm), the 2nd translucent phase shifting region (line width is 2.0 μm) and Lightproof area and the large-scale phase for being sequentially laminated with anti-reflective film and the 2nd translucent phase shift film on photomask in lightproof area Move mask.
The making ＞ of ＜ photoresistance patterns
Using above-mentioned phase-shift mask, and using resolution pole be limited to 3 μm Nikon manufacture exposure machine, to formed in glass The resist (AZ1500) that thickness on glass base material is 1.6 μm carries out pattern exposure, and carries out development treatment, as a result can be formed 1.9 μm of photoresistance pattern.
(width on the 2nd translucent phase shifting region in phase-shift mask)
Figure 13 is the plan of the pattern for the large-scale phase-shift mask for representing to include edge phase shifting region, and Figure 14 is to represent Figure 13 The figure of exposure intensity distribution on the imaging surface of shown large-scale phase-shift mask, Figure 15 is the enlarged drawing of Figure 14 C portion, Figure 16 It is the enlarged drawing of Figure 14 D parts.
The exposure intensity distribution (luminous intensity) of the exposure machine using the manufacture of Nikon companies during to following situation carries out mould Intend, i.e. as large-scale phase-shift mask, and the width that will transmit through region is set to 5 μm, and the width b of the 2nd translucent phase shifting region is set For 0.25 μm (reference example 3), 0.5 μm (reference example 4), 0.75 μm (reference example 5), 1.0 μm (reference examples 6), 1.5 μm of (reference examples 7), 2.0 μm (reference examples 8), 2.5 μm (reference examples 9), 3.0 μm (reference examples 10), 3.5 μm (reference examples 11) and 4.0 μm of (references Example 12).Furthermore make the simulated conditions in addition to the pattern of above-mentioned large-scale phase-shift mask identical with reference example 1.Show the result in figure 14~Figure 16.
Exposure intensity shown in Figure 15 is smaller, represents that the waveform shown in Figure 14 is more precipitous, the figure on large-scale phase-shift mask The phase shift effect of the position at case edge, if the width of the 2nd translucent phase shifting region more than 2.0 μm, is not observed more obvious Effect (phase shift effect reaches capacity).
Also, as shown in figure 16, as the width of the 2nd translucent phase shifting region becomes big, the value at side peak becomes big.
In the present invention, can be according to the sensitivity of resist, by side peak, non-confrontational erosion agent sets the 2nd in a manner of impacting The width of translucent phase shifting region.
On the width of such a phase shift, for the actual achievement of the resist used when forming tft array substrate, preferably set In the range of width, i.e. 0.25 μm~3.5 μm that exposure intensity for side peak is less than 5%.
Symbol description
1 transparency carrier
2 translucent phase shift films
3rd, 3a, 3b penetrating region
4 translucent phase shifting regions
5 exposure light
10th, 40,50,60 large-scale phase-shift mask
The optical ampeitude of 11a, 11b through the light of penetrating region
Optical ampeitudes of the 11c through the light of translucent phase shifting region
The optical ampeitude on imaging surface of 12a, 12b through the light of penetrating region
The peak value of the secondary lobe of 13a, 13b optical ampeitude
14th, the optical ampeitude on imaging surface of the light of 24, the 34 translucent phase shifting regions of transmission
15th, the optical ampeitude on imaging surface of the light of 25, the 35 large-scale phase-shift masks of transmission
16th, the light intensity distributions on imaging surface of the light of 26,36,56, the 66 large-scale phase-shift masks of transmission
17th, the light intensity distributions on imaging surface of the light of 27,37,57,67 transmission binary masks
18th, the contrast lifting effect of 28,38 large-scale phase-shift masks
21a, 21b, optical ampeitude on 31 imaging surfaces peak value
29a, 29b, light intensity distributions on 39 imaging surfaces peak value (side peak)
41 photomask blanks
42 resists

Claims (5)

1. a kind of large-scale phase-shift mask, it includes transparency carrier and formed translucent translucent on above-mentioned transparency carrier Phase shift film, including expose the penetrating region of above-mentioned transparency carrier and above-mentioned phase shift film is provided only with above-mentioned transparency carrier Translucent phase shifting region, and including being adjacently configured with the mask figure of above-mentioned penetrating region and above-mentioned translucent phase shifting region Case, and the phase of the exposure light of above-mentioned translucent phase shifting region is passed through relative to the phase of the exposure light through above-mentioned penetrating region Reversion, when the light transmittance of the exposure light of above-mentioned penetrating region is set into 100%, the exposure light of above-mentioned translucent phase shifting region Light transmittance is the value of 4% to 30% scope,
Above-mentioned large-scale phase-shift mask includes the photomask formed on above-mentioned transparency carrier and in a manner of covering above-mentioned photomask The translucent 2nd translucent phase shift film formed, and including being configured with the mask figure of lightproof area and the 2nd translucent phase shifting region Case, the lightproof area have been stacked above-mentioned photomask and above-mentioned 2nd translucent phase shift film, and the 2nd translucent phase shifting region is set Put between above-mentioned lightproof area and above-mentioned penetrating region and be provided only with above-mentioned 2nd translucent phase shift film, and pass through the above-mentioned 2nd Translucent phase shifting region exposure light phase relative to through above-mentioned penetrating region exposure light phasing back,
The width of above-mentioned 2nd translucent phase shifting region is in more than 0.25 μm and less than 3.5 μm of scope.
2. large-scale phase-shift mask as claimed in claim 1, wherein,
The both sides for being included in above-mentioned translucent phase shifting region are adjacently configured with the pattern of above-mentioned penetrating region, above-mentioned translucent phase The width for the scope that the width for moving region is 1 μm to 5 μm.
3. large-scale phase-shift mask as claimed in claim 1 or 2, wherein,
Above-mentioned translucent phase shift film is the individual layer containing chromium and chromium compound or 2 layers of structure.
4. large-scale phase-shift mask as claimed in claim 1 or 2, wherein,
The thickness of above-mentioned translucent phase shift film is the thickness of 0.1 μm to 0.14 μm of scope.
5. a kind of manufacture method of large-scale phase-shift mask, it is the manufacturer of the large-scale phase-shift mask described in claim 1 or 2 Method, comprise the following steps：
Using the 2nd blank for being laminated photomask on the transparent substrate, after above-mentioned photomask is etched into predetermined pattern, above-mentioned The surface entire surface of the above-mentioned photomask side of transparency carrier forms the translucent phase shift film using chromium and chromium compound as material, from And the step of preparing blank；
Prepare the blank with photonasty resist obtained from photonasty resist is coated with above-mentioned blank the step of；And
Using describing device by required pattern exposure to the above-mentioned blank with photonasty resist, after being developed, carry out wet Formula etches, the step of removing photonasty resist, and above-mentioned translucent phase shift film is formed pattern.
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