CN115202146A - Phase-shifting mask and manufacturing method thereof - Google Patents
Phase-shifting mask and manufacturing method thereof Download PDFInfo
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- CN115202146A CN115202146A CN202110402081.8A CN202110402081A CN115202146A CN 115202146 A CN115202146 A CN 115202146A CN 202110402081 A CN202110402081 A CN 202110402081A CN 115202146 A CN115202146 A CN 115202146A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
Abstract
The invention provides a phase-shifting mask and a manufacturing method thereof, wherein the phase-shifting mask comprises the following components: the transparent substrate is defined with a light-transmitting area and at least one light-shielding area adjacent to the light-transmitting area; a shading layer covering the shading area on the transparent substrate; and the phase shifting side wall sheet is positioned on the side wall of the light shielding layer between the light transmitting area and the light shielding area, and enables exposure light penetrating through the phase shifting side wall sheet to generate phase conversion or/and light attenuation. The invention can control the phase and contrast of the exposure light at the light transmitting area and the light shading area by adjusting the thickness and the width of the phase shifting side wall plate, and avoid the generation of ghost lines, thereby greatly improving the contrast and the resolution of the photoresist pattern obtained by adopting the phase shifting mask plate for exposure.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuit manufacturing, and particularly relates to a phase-shifting mask and a manufacturing method thereof.
Background
The photolithography technology has been continuously developed along with the manufacturing method of the integrated circuit, the line width has been continuously reduced, the area of the semiconductor device has become smaller and smaller, and the layout of the semiconductor has evolved from the common single function separation device to the integration of the high-density multifunctional integrated circuit; from the first IC (integrated circuit) to the next LSI (large scale integrated circuit), VLSI (very large scale integrated circuit), to today's ULSI (ultra large scale integrated circuit), the area of the device is further reduced. Considering the restrictions of adverse factors such as complexity of process development, long-term performance, high cost and the like, how to further improve the integration density of devices on the basis of the prior art level to obtain as many effective chips as possible on the same silicon chip, thereby improving the overall benefits will be more and more emphasized by chip manufacturers. The photolithography process plays a key role, and the photolithography apparatus, the photolithography process, and the mask technology are important in photolithography.
For a mask plate, a phase shift mask technology is one of the most practical technologies for improving the photoetching resolution, the principle of the technology is that the phase of adjacent areas is inverted by 180 degrees, so that interference effects are counteracted, and further the negative influence of the photoetching quality of the adjacent characteristic areas on a layout, which is more and more influenced by the optical proximity effect, caused by the continuous reduction of the line width is counteracted, and the key point of the technology is that a phase shift layer can accurately control the phase of a mask plate pattern.
As shown in FIG. 1, a conventional phase shift mask includes a quartz substrate 11 and a chromium layer 12, and the chromium layer 12 on the phase shift mask is patterned to provide a phase shift according to a trench depth d on the quartz substrate 11.
As shown in FIG. 2, another phase shift mask comprises a quartz substrate 21, a phase shift layer 23 and a chromium layer 22, and after the chromium layer 22 and the phase shift layer 23 on the phase shift mask are patterned, the amount of phase shift and the attenuation are determined by the thickness d of the phase shift layer 23.
With both of the above phase shift mask schemes, the position having zero intensity due to diffraction of the transmitted light and the 180 ° phase shift light may enhance the contrast of the image pattern, but may also cause "ghost-lines" on the positive photoresist pattern on the wafer, which is not favorable for the exposure accuracy of the positive photoresist.
Phase shift masks may also comprise multiple layers of materials for better mask fabrication performance. By means of the thickness relation among the multiple layers of materials, areas with different phase shift angles are formed on the mask, so that ghost lines can be avoided appearing on exposed positive photoresist patterns on the wafer.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a phase-shifting mask and a method for manufacturing the same, which are used to solve the problem that the phase-shifting mask in the prior art is prone to causing ghost lines or greatly increasing the process difficulty and cost for eliminating the ghost lines.
To achieve the above and other related objects, the present invention provides a phase shift mask, comprising: the light shielding device comprises a transparent substrate, a light shielding layer and a light source, wherein the transparent substrate is defined with a light transmitting area and at least one light shielding area adjacent to the light transmitting area; a light shielding layer covering the light shielding region on the transparent substrate; and the phase shift side wall sheet is positioned on the side wall of the light shielding layer between the light transmitting area and the light shielding area, and enables exposure light penetrating through the phase shift side wall sheet to generate phase conversion or/and light attenuation.
Optionally, the phase shift sidewall sheet is controlled in thickness, width and material composition to control the phase shift and/or attenuation ratio of the exposure light transmitted through the phase shift sidewall sheet.
Optionally, the material of the transparent substrate includes quartz glass, and the material of the light shielding layer includes chromium or chromium oxide or chromium nitride.
Optionally, the phase shift sidewall sheet is made of a material selected from the group consisting of molybdenum silicon oxide, molybdenum silicon oxynitride, molybdenum silicon carbide oxynitride, chromium silicon oxide, chromium silicon oxynitride, and chromium silicon carbide oxynitride, wherein the composition is variable and determines the degree of phase transition and/or light attenuation.
Optionally, the ratio of the thickness of the phase shift sidewall sheet to the thickness of the light shielding layer is between 0.5 and 1 to 1, and the ratio of the width of the phase shift sidewall sheet to the thickness of the light shielding layer is between 0.2 and 0.5.
Optionally, the phase shift side wall plate makes the variation of the phase conversion of the exposure light passing through the phase shift side wall plate between 0 and 180 degrees.
Optionally, the phase shift side wall sheet has a light attenuation ratio of 0 to 80% by exposure light passing through the phase shift side wall sheet.
Optionally, the light-transmissive region has a groove such that the exposure light transmitted by the light-transmissive region includes phase transition and/or light attenuation.
The invention also provides a manufacturing method of the phase-shifting mask, which comprises the following steps: providing a transparent substrate, wherein the transparent substrate is defined with a light-transmitting area and at least one light-shading area adjacent to the light-transmitting area; depositing a light shielding layer on the transparent substrate, and etching the light shielding layer to expose the light-transmitting area; and depositing a phase shift material layer on the transparent substrate, carrying out a back-etching process on the phase shift material layer, removing the phase shift material layer in the light transmitting area and the light shielding area, and reserving part of the phase shift material layer on the side wall of the light shielding layer to form a phase shift side wall sheet, wherein the phase shift side wall sheet enables exposure light penetrating through the phase shift side wall sheet to generate phase conversion or/and light attenuation.
Optionally, the manufacturing method further includes: and etching the light transmission area to form a groove with a certain depth so as to form the light transmission area with phase conversion or/and light attenuation.
The invention also provides a phase-shifting mask, which comprises: the light source comprises a transparent substrate, a first light-transmitting area and at least one second light-transmitting area, wherein the transparent substrate is defined with the first light-transmitting area and the at least one second light-transmitting area adjacent to the first light-transmitting area; the phase shifting layer covers the first light transmission area on the transparent substrate and enables exposure light penetrating through the phase shifting layer to generate phase conversion or/and light attenuation; and the shading side wall sheet is positioned on the side wall of the phase shift layer between the first light transmission area and the second light transmission area.
Optionally, the material of the transparent substrate includes quartz glass, the material of the light-shielding sidewall includes chromium or chromium oxide or chromium nitride, and the material of the phase shift layer includes one of molybdenum silicon oxide, molybdenum silicon oxynitride, molybdenum silicon oxycarbide, chromium silicon oxide, chromium silicon oxynitride, and chromium silicon oxycarbide, where each component can determine the degree of phase transition or/and light attenuation.
Optionally, the ratio of the thickness of the light-shielding side wall sheet to the thickness of the phase shift layer is between 0.5.
Optionally, the phase shift layer changes the phase of the exposure light transmitted through the phase shift layer by 0 to 180 degrees.
Optionally, the phase shifting layer attenuates the light by exposure light transmitted through the phase shifting layer by a proportion of 0 to 80%.
The invention also provides a manufacturing method of the phase-shifting mask, which comprises the following steps: providing a transparent substrate, wherein the transparent substrate is defined with a first light-transmitting area and at least one second light-transmitting area adjacent to the first light-transmitting area; depositing a phase shift layer on the transparent substrate, etching the phase shift layer to reserve the phase shift layer of the first light transmission area and expose the second light transmission area, wherein the phase shift layer enables exposure light penetrating through the phase shift layer to generate phase conversion or/and light attenuation; and depositing a shading material layer on the transparent substrate, carrying out back-etching process on the shading material layer, removing part of the shading material layer in the second light transmission area, and reserving part of the shading material layer positioned on the side wall of the phase shift layer to form a shading side wall sheet.
The invention also provides a phase-shifting mask, which comprises: the light-shielding device comprises a transparent substrate, a light-shielding layer and a light-transmitting layer, wherein the transparent substrate is defined with a first light-transmitting area, at least one second light-transmitting area adjacent to the first light-transmitting area and a light-shielding area; the phase shift layer covers the first light transmission area and the shading area on the transparent substrate, and enables exposure light penetrating through the phase shift layer to generate phase conversion or/and light attenuation; the shading layer is positioned on the phase shifting layer and covers the shading area; and the phase shifting side wall sheet is positioned on the side wall of the light shielding layer between the first light transmitting area and the light shielding area, and enables the exposure light penetrating through the phase shifting side wall sheet to generate phase conversion or/and light attenuation.
Optionally, the material of the transparent substrate includes quartz glass, the material of the phase shift layer includes one of molybdenum silicon oxide, molybdenum silicon oxynitride, chromium silicon oxynitride, and the material of the phase shift sidewall piece includes one of molybdenum silicon oxide, molybdenum silicon oxynitride, chromium silicon oxynitride, and chromium silicon oxynitride, where each component can determine the degree of phase transition or/and light attenuation.
Optionally, the ratio of the thickness of the phase shift sidewall sheet to the thickness of the light shielding layer is between 0.5 and 1 to 1, and the ratio of the width of the phase shift sidewall sheet to the thickness of the light shielding layer is between 0.2 and 0.5.
Optionally, the phase shift layer varies the phase shift of the exposure light passing through the phase shift layer by 0 to 180 degrees, and the phase shift sidewall sheet varies the phase shift of the exposure light passing through the phase shift sidewall sheet by 0 to 180 degrees.
Optionally, the phase shift layer has a light attenuation ratio of 0 to 80% by exposure light passing through the phase shift layer, and the phase shift sidewall sheet has a light attenuation ratio of 0 to 80% by exposure light passing through the phase shift sidewall sheet.
As mentioned above, the phase-shifting mask and the manufacturing method thereof have the following beneficial effects:
on one hand, the transparent substrate is provided with a light-transmitting area and at least one shading area adjacent to the light-transmitting area, the shading layer covers the shading area on the transparent substrate, the phase-shifting side wall sheet is arranged on the side wall of the shading layer between the light-transmitting area and the shading area and used for enabling the exposure light penetrating through the phase-shifting side wall sheet to generate phase conversion or/and light attenuation, the phase of the exposure light at the light-transmitting area and the shading area can be controlled by adjusting the thickness of the phase-shifting side wall sheet, ghost lines are avoided, and therefore the contrast and the resolution of a photoresist pattern obtained by exposure of the phase-shifting mask are greatly improved.
On the other hand, the first light-transmitting area and at least one second light-transmitting area adjacent to the first light-transmitting area are defined on the transparent substrate, the phase-shifting layer covers the first light-transmitting area on the transparent substrate, so that exposure light penetrating through the phase-shifting layer generates phase conversion or/and light attenuation, the shading side wall sheet is positioned on the side wall of the phase-shifting layer between the first light-transmitting area and the second light-transmitting area, and ghost lines are avoided by the blocking effect of the shading side wall sheet on the exposure light, so that the contrast and the resolution of a photoresist pattern obtained by exposure of the phase-shifting mask are greatly improved.
In another aspect of the present invention, a first light-transmitting area, at least one second light-transmitting area adjacent to the first light-transmitting area, and a light-shielding area are defined on a transparent substrate, a phase shift layer covers the first light-transmitting area and the light-shielding area on the transparent substrate, and is configured to generate phase conversion or/and light attenuation for exposure light passing through the phase shift layer, a light-shielding layer is located on the phase shift layer and covers the light-shielding area, and a phase shift sidewall sheet is located on a sidewall of the light-shielding layer between the first light-transmitting area and the light-shielding area, and is configured to generate phase conversion or/and light attenuation for exposure light passing through the phase shift sidewall sheet. According to the invention, the phase and the contrast of the exposure light at the first light-transmitting area and the light-shielding area and/or the first light-shielding area of the second light-transmitting area can be adjusted by adjusting the thickness and the width of the phase-shifting layer and/or the phase-shifting side wall plate, so that ghost lines are avoided, and the contrast and the resolution of the photoresist pattern obtained by adopting the phase-shifting mask plate for exposure are greatly improved.
Drawings
FIG. 1 is a schematic diagram of a phase shift mask.
FIG. 2 is a schematic view of another phase shift mask and mechanism.
Fig. 3 to 6 are schematic structural diagrams of steps of a method for manufacturing a phase-shift mask according to embodiment 1 of the present invention, wherein fig. 6 is a schematic structural diagram of a phase-shift mask according to embodiment 1 of the present invention.
FIG. 7 is a schematic view showing a photoresist pattern obtained by exposure using the phase-shifting mask of example 1 of the present invention.
Fig. 8 to 11 are schematic structural views of steps of a method for manufacturing a phase-shift mask according to embodiment 2 of the present invention, wherein fig. 11 is a schematic structural view of the phase-shift mask according to embodiment 2 of the present invention.
FIG. 12 is a schematic view showing a photoresist pattern exposed by using the phase-shifting mask of example 2 of the present invention.
FIG. 13 is a schematic view of the phase shift mask according to embodiment 3 of the present invention.
Description of the element reference
101. Transparent substrate
102. Light shielding layer
103. Light-blocking area
104. Light-transmitting region
105. Phase shift material layer
106. Phase shift side wall sheet
107. Photoresist pattern
201. Transparent substrate
202. Phase shifting layer
203. A first light transmission region
204. Second light-transmitting region
205. Light-shielding material layer
206. Shading side wall piece
207. Photoresist pattern
301. Transparent substrate
302. Phase shifting layer
303. Light shielding layer
304. Phase shift side wall sheet
305. Light-shielding area
306. First light-transmitting region
307. Second light-transmitting region
308. Photoresist pattern
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example 1
The embodiment provides a manufacturing method of a phase-shifting mask, which comprises the following steps:
as shown in fig. 3, step 1) is performed to provide a transparent substrate 101, where the transparent substrate 101 defines a transparent region 104 and at least one light-shielding region 103 adjacent to the transparent region 104.
The light transmittance of the transparent substrate 101 is preferably 80% or more, and in this embodiment, the material of the transparent substrate 101 may be quartz glass, which has a high light transmittance and can ensure the intensity of the exposure light passing through the transparent substrate 101. Of course, in other embodiments, other materials with good light transmittance can be used for the transparent substrate 101, and the examples are not limited thereto.
As shown in fig. 3 to 4, step 2) is then performed to deposit a light-shielding layer 102 on the transparent substrate 101, and the light-shielding layer 102 is etched to expose the light-transmitting region 104.
For example, a method such as magnetron sputtering may be used to deposit the light shielding layer 102 on the transparent substrate 101, and the material of the light shielding layer 102 may be chromium or chromium oxide or chromium nitride. Then, the light-shielding layer 102 may be etched by using, for example, a photolithography process and an etching process to a depth reaching the transparent substrate 101 to expose the light-transmitting region 104.
Further, in this embodiment, a trench with a certain depth may be formed in the light-transmitting region 104 by etching, so that the exposure light transmitted by the light-transmitting region 104 includes phase conversion and/or light attenuation.
As shown in fig. 5 to 6, step 3) is finally performed to deposit a phase shift material layer 105 on the transparent substrate 101, and perform a back etching process on the phase shift material layer 105, remove a portion of the phase shift material layer 105 in the light-transmitting region 104, and leave a portion of the phase shift material layer 105 on the sidewall of the light-shielding layer 102 to form a phase shift sidewall sheet 106, where the phase shift sidewall sheet 106 causes phase conversion or/and light attenuation of the exposure light passing through the phase shift sidewall sheet 106.
For example, a phase shift material layer 105 may be deposited on the transparent substrate 101 by using a method such as magnetron sputtering, the phase shift material layer 105 fills the light-transmitting region 104 and covers the light-shielding layer 102, and a material of the phase shift material layer 105 includes one of molybdenum silicon oxide, molybdenum silicon oxynitride, molybdenum silicon carbide oxynitride, chromium silicon oxide, chromium silicon oxynitride, and chromium silicon carbide oxynitride. Then, without using a photolithography process to form a photoresist pattern, the phase shift material layer 105 is etched back from above the transparent substrate 101 to below by directly using a plasma etching process, so as to remove the phase shift material layer 105 above the light-shielding layer 102, and at the same time, to remove a portion of the phase shift material layer 105 in the light-transmitting region 104, since the etching rate of the phase shift material layer 105 located on the sidewall of the light-shielding layer 102 is lower than that at other positions, after the phase shift material layer 105 located in the middle region of the light-transmitting region 104 is etched back to remove the phase shift material layer 105 located on the sidewall of the light-shielding layer 102, a portion of the phase shift material layer 105 located on the sidewall of the light-shielding layer 102 is retained to form a phase shift sidewall 106, and the phase shift sidewall 106 allows exposure light passing through the phase shift sidewall 106 to generate phase shift or/or optical attenuation, wherein the material of the phase shift sidewall 106 includes one of molybdenum silicon oxide, molybdenum silicon oxynitride, molybdenum silicon, chromium silicon oxynitride, chromium silicon, and chromium silicon oxynitride, and chromium silicon, wherein each component can determine the degree of phase shift or/or optical attenuation.
The thickness of the phase shift sidewall 106 can be controlled by controlling the thickness, width and material composition of the phase shift sidewall 106 to control the phase conversion and/or light attenuation ratio of the exposure light passing through the phase shift sidewall 106, specifically, by controlling the etching time of the etching-back process or adjusting the etching conditions of the etching-back process, and by controlling the thickness of the phase shift sidewall 106, the conversion of the exposure light to different phases can be achieved. Preferably, the ratio of the thickness of the phase shift sidewall piece 106 to the thickness of the light shielding layer 102 is between 0.5. For example, the phase shift sidewall plate 106 may have a thickness equal to that of the light-shielding layer 102 and a width 1/3 of the thickness of the light-shielding layer 102.
Depending on the composition or structure of the phase shift sidewall 106, the phase shift sidewall 106 may change the phase of the exposure light passing through the phase shift sidewall 106 by 0-180 degrees, such as 90 degrees or 180 degrees, for example. The phase shift side wall sheet 106 may have a rate of attenuation of the exposure light transmitted through the phase shift side wall sheet 106 of 0 to 80%, for example, 20%, 30%, 50%, 60%.
As shown in fig. 6, the present embodiment further provides a phase-shifting mask, which includes: a transparent substrate 101, wherein the transparent substrate 101 defines a light-transmitting area 104 and at least one light-shielding area 103 adjacent to the light-transmitting area 104; a light-shielding layer 102 covering the light-shielding region 103 on the transparent substrate 101; and a phase shift sidewall plate 106 disposed on a sidewall of the light shielding layer 102 between the light transmitting region 104 and the light shielding region 103, wherein the phase shift sidewall plate 106 performs phase conversion and/or light attenuation on the exposure light passing through the phase shift sidewall plate 106.
The light transmittance of the transparent substrate 101 is preferably 80% or more, and in this embodiment, the material of the transparent substrate 101 may be quartz glass, which has a high light transmittance and can ensure the intensity of the exposure light passing through the transparent substrate 101. Of course, in other embodiments, other materials with good light transmittance may be used for the transparent substrate 101, and are not limited to the examples listed herein.
The material of the light shielding layer 102 includes chromium or chromium oxide or chromium nitride.
The ratio of phase transformation and/or light attenuation of the exposure light transmitted through the phase shift sidewall sheet 106 is controlled by controlling the thickness, width, and material composition of the phase shift sidewall sheet 106. Preferably, the ratio of the thickness of the phase shift sidewall piece 106 to the thickness of the light shielding layer 102 is between 0.5. For example, the phase shift sidewall pieces 106 may have a thickness equal to the light-shielding layer 102 and a width 1/3 of the thickness of the light-shielding layer 102.
Depending on the composition or structure of the phase shift sidewall 106, the phase shift sidewall 106 may change the phase of the exposure light passing through the phase shift sidewall 106 by 0-180 degrees, such as 90 degrees or 180 degrees, for example. The phase shift side wall sheet 106 may have a light attenuation ratio of 0 to 80%, for example, 20%, 30%, 50%, 60% or the like, with respect to the exposure light transmitted through the phase shift side wall sheet 106.
By way of example, the phase shifting sidewall piece 106 may comprise one of molybdenum silicon oxide, molybdenum silicon oxynitride, molybdenum silicon oxycarbide, chromium silicon oxide, chromium silicon oxynitride, and chromium silicon oxycarbide, wherein the composition may vary and may determine the degree of phase transition or/and optical attenuation.
As an example, the light-transmissive region 104 has a groove such that the exposure light transmitted by the light-transmissive region 104 includes phase transition and/or light attenuation.
The invention defines a light-transmitting area 104 and at least one light-shielding area 103 adjacent to the light-transmitting area 104 on a transparent substrate 101, a light-shielding layer 102 covers the light-shielding area 103 on the transparent substrate 101, and a phase shift side wall plate 106 is positioned on the side wall of the light-shielding layer 102 between the light-transmitting area 104 and the light-shielding area 103 for generating phase conversion or/and light attenuation of the exposure light penetrating through the phase shift side wall plate 106, and the phase of the exposure light at the light-transmitting area 104 and the light-shielding area 103 can be controlled by adjusting the thickness, the width and the material composition of the phase shift side wall plate 106, so as to avoid the generation of 'ghost lines', thereby greatly improving the contrast and the resolution of a photoresist pattern 107 obtained by the phase shift mask plate exposure, as shown in fig. 7.
Example 2
As shown in fig. 8 to fig. 12, the present embodiment provides a method for manufacturing a phase shift mask, including:
as shown in fig. 8, step 1) is performed to provide a transparent substrate 201, wherein the transparent substrate 201 defines a first transparent region 203 and at least one second transparent region 204 adjacent to the first transparent region 203.
For example, the light transmittance of the transparent substrate 201 is preferably 80% or more, and in this embodiment, the material of the transparent substrate 201 may be quartz glass, which has a high light transmittance and can ensure the intensity of the exposure light transmitted through the transparent substrate 201. Of course, in other embodiments, other materials with good light transmittance can be used for the transparent substrate 201, and the invention is not limited to the examples listed herein.
As shown in fig. 8 to 9, step 2) is then performed to deposit a phase shift layer 202 on the transparent substrate 201, and the phase shift layer 202 is etched to leave the phase shift layer 202 of the first light-transmitting region 203 and expose the second light-transmitting region 204, wherein the phase shift layer 202 causes phase conversion or/and light attenuation of the exposure light passing through the phase shift layer 202.
For example, a phase shift material layer may be deposited on the transparent substrate 201 by a method such as magnetron sputtering, the phase shift layer 202 may generate phase transition and/or light attenuation for the exposure light passing through the phase shift layer 202, and the material of the phase shift material layer may include one of molybdenum silicon oxide, molybdenum silicon oxynitride, chromium silicon carbide oxynitride, chromium silicon oxynitride, and chromium silicon carbide oxynitride, wherein each component may vary and may determine the degree of phase transition and/or light attenuation. By controlling the thickness of the phase shifting layer 202, it is possible to achieve its conversion to different phases of the exposure light.
Then, the phase shift material layer may be etched by, for example, a photolithography process and an etching process, to a depth reaching the transparent substrate 201, so as to expose the second light-transmitting region 204.
As shown in fig. 10 to 11, step 3) is finally performed to deposit a light-shielding material layer 205 on the transparent substrate 201, and perform a back etching process on the light-shielding material layer 205 to remove a portion of the light-shielding material layer 205 in the second light-transmitting region 204 and leave a portion of the light-shielding material layer 205 on the sidewall of the phase-shift layer 202, so as to form a light-shielding sidewall sheet 206.
For example, a light-shielding material layer 205 may be deposited on the transparent substrate 201 by a method such as magnetron sputtering, the light-shielding material layer 205 fills the light-transmitting region and covers the phase-shifting layer 202, and the material of the light-shielding material layer 205 includes chromium or chromium oxide or chromium nitride. Then, without using a photolithography process to make a photoresist pattern, a plasma etching process is directly used to perform a back etching process on the light-shielding material layer 205 from the top of the transparent substrate 201 to the bottom, so as to remove the light-shielding material layer 205 on the top of the light-shielding layer and simultaneously remove a portion of the light-shielding material layer 205 in the light-transmitting region, and since the etching rate of the light-shielding material layer 205 on the sidewall of the light-shielding layer is lower than that of the light-shielding material layer 205 at other positions, after the light-shielding material layer 205 in the middle region of the light-transmitting region is removed by back etching, a portion of the light-shielding material layer 205 on the sidewall of the phase-shift material layer is retained, thereby forming a light-shielding sidewall sheet 206.
As shown in fig. 11, the present embodiment further provides a phase-shifting mask, which includes: a transparent substrate 201, wherein the transparent substrate 201 defines a first light-transmitting area 203 and at least one second light-transmitting area 204 adjacent to the first light-transmitting area 203; a phase shift layer 202 covering the first light-transmitting region 203 on the transparent substrate 201, wherein the phase shift layer 202 causes phase conversion and/or light attenuation of exposure light passing through the phase shift layer 202; and a light shielding sidewall 206 disposed on a sidewall of the phase shift layer 202 between the first light transmission region 203 and the second light transmission region 204.
For example, the material of the transparent substrate 201 includes quartz glass, the material of the light-shielding sidewall piece 206 includes chromium or chromium oxide or chromium nitride, and the material of the phase-shifting layer 202 includes one of molybdenum silicon oxide, molybdenum silicon oxynitride, molybdenum silicon oxycarbide, chromium silicon oxide, chromium silicon oxynitride, and chromium silicon oxycarbide, wherein the composition can vary and can determine the degree of phase transition or/and light attenuation.
For example, the ratio of the thickness of the light-shielding side wall sheet 206 to the thickness of the phase shift layer 202 is between 0.5.
For example, the phase shift layer 202 causes the exposure light transmitted through the phase shift layer 202 to change its phase transition by 0 to 180 degrees. The phase shift layer 202 has a light attenuation ratio of 0 to 80% by exposure light transmitted through the phase shift layer 202.
In the present invention, a first light-transmitting area 203 and at least one second light-transmitting area 204 adjacent to the first light-transmitting area 203 are defined on a transparent substrate 201, a phase shift layer 202 covers the first light-transmitting area 203 on the transparent substrate 201, so that exposure light passing through the phase shift layer 202 generates phase conversion or/and light attenuation, and a light-shielding sidewall 206 is located on a sidewall of the phase shift layer 202 between the first light-transmitting area 203 and the second light-transmitting area 204, and the generation of "ghost lines" is avoided by the blocking effect of the light-shielding sidewall 206 on the exposure light, so that the contrast and resolution of a photoresist pattern 207 exposed by using the phase shift mask are greatly improved, as shown in fig. 12.
Example 3
As shown in fig. 13, the present embodiment provides a phase shift mask, which includes: a transparent substrate 301, wherein the transparent substrate 301 defines a first transparent region 306, at least one second transparent region 307 adjacent to the first transparent region 306, and a light-shielding region 305; a phase shift layer 302 covering the first light-transmitting area 306 and the light-shielding area 305 on the transparent substrate 301, wherein the phase shift layer 302 causes phase conversion and/or light attenuation of exposure light passing through the phase shift layer 302; a light-shielding layer 303 disposed on the phase shift layer 302 and covering the light-shielding region 305; a phase shift sidewall 304 on a sidewall of the light shielding layer 303 between the first light transmitting region 306 and the light shielding region 305, wherein the phase shift sidewall 304 causes phase conversion and/or light attenuation of the exposure light passing through the phase shift sidewall 304.
The material of the transparent substrate 301 comprises quartz glass, the material of the phase shift layer 302 comprises one of molybdenum silicon oxide, molybdenum silicon oxynitride, chromium silicon oxide, chromium silicon oxynitride and chromium silicon oxynitride, and the material of the phase shift sidewall piece 304 comprises one of molybdenum silicon oxide, molybdenum silicon oxynitride, chromium silicon oxynitride and chromium silicon oxynitride.
The ratio of the thickness of the phase shift sidewall piece 304 to the thickness of the light shielding layer 303 is from 0.5 to 1, and the ratio of the width of the phase shift sidewall piece 304 to the thickness of the light shielding layer 303 is from 0.2 to 1 to 0.5.
The phase shift layer 302 varies the amount of phase shift of the exposure light passing through the phase shift layer 302 between 0 and 180 degrees, and the phase shift spacer 304 varies the amount of phase shift of the exposure light passing through the phase shift spacer 304 between 0 and 180 degrees. The phase shift layer 302 has a light attenuation ratio of 0 to 80% with respect to the exposure light transmitted through the phase shift layer 302, and the phase shift sidewall sheet 304 has a light attenuation ratio of 0 to 80% with respect to the exposure light transmitted through the phase shift sidewall sheet 304.
The invention defines a first light transmission area 306, at least one second light transmission area 307 and a light shielding area 305 adjacent to the first light transmission area 306 on a transparent substrate 301, a phase shift layer 302 covers the first light transmission area 306 and the light shielding area 305 on the transparent substrate 301 for generating phase conversion or/and light attenuation for exposure light penetrating through the phase shift layer 302, a light shielding layer 303 is positioned on the phase shift layer 302 and covers the light shielding area 305, and a phase shift side wall plate 304 is positioned on the side wall of the light shielding layer 303 between the first light transmission area 306 and the light shielding area 305 for generating phase conversion or/and light attenuation for exposure light penetrating through the phase shift side wall plate 304. The invention can adjust the phase of the exposure light at the first light-transmitting area 306 and the light-shielding area 305 and/or the first light-shielding area 305 of the second light-transmitting area 307 by adjusting the thickness of the phase-shifting layer 302 and/or the phase-shifting side wall sheet 304, thereby avoiding the generation of ghost lines, and greatly improving the contrast and the resolution of the photoresist pattern obtained by the exposure of the phase-shifting mask.
As mentioned above, the phase-shifting mask and the manufacturing method thereof of the invention have the following beneficial effects:
on one hand, the transparent substrate is provided with a light-transmitting area and at least one shading area adjacent to the light-transmitting area, the shading layer covers the shading area on the transparent substrate, the phase-shifting side wall sheet is arranged on the side wall of the shading layer between the light-transmitting area and the shading area and used for enabling the exposure light penetrating through the phase-shifting side wall sheet to generate phase conversion or/and light attenuation, the phase of the exposure light at the light-transmitting area and the shading area can be controlled by adjusting the thickness of the phase-shifting side wall sheet, ghost lines are avoided, and therefore the contrast and the resolution of a photoresist pattern obtained by exposure of the phase-shifting mask are greatly improved.
On the other hand, the invention defines a first light-transmitting area and at least one second light-transmitting area adjacent to the first light-transmitting area on the transparent substrate, the phase shift layer covers the first light-transmitting area on the transparent substrate, so that the exposure light penetrating through the phase shift layer generates phase conversion or/and light attenuation, the shading side wall sheet is positioned on the side wall of the phase shift layer between the first light-transmitting area and the second light-transmitting area, and ghost lines are avoided by the blocking effect of the shading side wall sheet on the exposure light, thereby greatly improving the contrast and resolution of the photoresist pattern obtained by the exposure of the phase shift mask.
In another aspect of the present invention, a first light transmission region, at least one second light transmission region adjacent to the first light transmission region, and a light shielding region are defined on a transparent substrate, a phase shift layer covers the first light transmission region and the light shielding region on the transparent substrate, and is configured to generate phase conversion or/and light attenuation for exposure light passing through the phase shift layer, a light shielding layer is located on the phase shift layer and covers the light shielding region, and a phase shift sidewall sheet is located on a sidewall of the light shielding layer between the first light transmission region and the light shielding region, and is configured to generate phase conversion or/and light attenuation for exposure light passing through the phase shift sidewall sheet. According to the invention, the phase and the contrast of the exposure light at the first light-transmitting area and the light-shielding area and/or the first light-shielding area of the second light-transmitting area can be adjusted by adjusting the thickness and the width of the phase-shifting layer and/or the phase-shifting side wall plate, so that ghost lines are avoided, and the contrast and the resolution of the photoresist pattern obtained by adopting the phase-shifting mask plate for exposure are greatly improved.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and scope of the present invention as defined in the appended claims.
Claims (21)
1. A phase-shifting mask, comprising:
the light shielding device comprises a transparent substrate, a light shielding layer and a light source, wherein the transparent substrate is defined with a light transmitting area and at least one light shielding area adjacent to the light transmitting area;
a shading layer covering the shading area on the transparent substrate;
and the phase shift side wall sheet is positioned on the side wall of the light shielding layer between the light transmitting area and the light shielding area, and enables exposure light penetrating through the phase shift side wall sheet to generate phase conversion or/and light attenuation.
2. The phase-shifting mask according to claim 1, wherein: the material of the transparent substrate comprises quartz glass, and the material of the light shielding layer comprises chromium or chromium oxide or chromium nitride.
3. The phase-shifting mask according to claim 1, wherein: the phase shift side wall sheet is made of one of molybdenum silicon oxide, molybdenum silicon oxynitride, molybdenum silicon carbide oxynitride, chromium silicon oxide, chromium silicon oxynitride and chromium silicon carbide oxynitride.
4. The phase-shifting mask according to claim 1, wherein: the phase conversion and/or light attenuation ratio of the exposure light passing through the phase shift side wall sheet is controlled by controlling the thickness and width of the phase shift side wall sheet and the material composition thereof.
5. The phase-shifting mask according to claim 1, wherein: the ratio of the thickness of the phase shift sidewall sheet to the thickness of the light-shielding layer is from 0.5 to 1.
6. The phase-shifting mask according to claim 1, wherein: the phase shift side wall plate makes the variation of the phase conversion generated by the exposure light penetrating through the phase shift side wall plate between 0 and 180 degrees.
7. The phase-shifting mask according to claim 1, wherein: the phase shift side wall sheet enables the proportion of light attenuation generated by exposure light penetrating through the phase shift side wall sheet to be between 0 and 80 percent.
8. The phase-shifting mask according to claim 1, wherein: the light-transmitting area is provided with a groove so that the exposure light transmitted by the light-transmitting area comprises phase conversion or/and light attenuation.
9. A method for manufacturing a phase shifting mask according to any one of claims 1 to 8, comprising the steps of:
providing a transparent substrate, wherein the transparent substrate is defined with a light-transmitting area and at least one light-shielding area adjacent to the light-transmitting area;
depositing a light shielding layer on the transparent substrate, and etching the light shielding layer to expose the light-transmitting area;
and depositing a phase shift material layer on the transparent substrate, carrying out back-etching process on the phase shift material layer, removing the phase shift material layer in the light transmitting area and the light shielding area, and reserving part of the phase shift material layer on the side wall of the light shielding layer to form a phase shift side wall sheet, wherein the phase shift side wall sheet enables exposure light penetrating through the phase shift side wall sheet to generate phase conversion or/and light attenuation.
10. The method for manufacturing a phase-shifting mask according to claim 9, further comprising: and etching the light transmission area to form a groove with a certain depth so as to form the light transmission area with phase conversion or/and light attenuation.
11. A phase-shifting mask, comprising:
the light source comprises a transparent substrate, a first light-transmitting area and at least one second light-transmitting area, wherein the transparent substrate is defined with the first light-transmitting area and the at least one second light-transmitting area adjacent to the first light-transmitting area;
the phase shift layer covers the first light transmission area on the transparent substrate and enables exposure light penetrating through the phase shift layer to generate phase conversion or/and light attenuation;
and the shading side wall sheet is positioned on the side wall of the phase shift layer between the first light transmission area and the second light transmission area.
12. The phase-shifting mask according to claim 11, wherein: the material of the transparent substrate comprises quartz glass, the material of the shading side wall piece comprises chromium or chromium oxide or chromium nitride, and the material of the phase shift layer comprises one of molybdenum silicon oxide, molybdenum silicon oxynitride, molybdenum silicon oxycarbide, chromium silicon oxide, chromium silicon oxynitride and chromium silicon oxycarbide.
13. The phase-shifting mask according to claim 11, wherein: the ratio of the thickness of the light-shielding side wall sheet to the thickness of the phase shift layer is 0.5 to 1.
14. The phase-shifting mask according to claim 11, wherein: the phase shift layer enables the variation of phase conversion of the exposure light penetrating through the phase shift layer to be between 0 and 180 degrees.
15. The phase-shifting mask according to claim 11, wherein: the phase shift layer allows the proportion of light attenuation generated by exposure light penetrating through the phase shift layer to be between 0 and 80 percent.
16. The method for manufacturing a phase shift mask according to any one of claims 11 to 15, comprising the steps of:
providing a transparent substrate, wherein the transparent substrate is defined with a first light-transmitting area and at least one second light-transmitting area adjacent to the first light-transmitting area;
depositing a phase shift layer on the transparent substrate, etching the phase shift layer to reserve the phase shift layer of the first light transmission area and expose the second light transmission area, wherein the phase shift layer enables exposure light penetrating through the phase shift layer to generate phase conversion or/and light attenuation;
and depositing a shading material layer on the transparent substrate, carrying out back-etching process on the shading material layer, removing part of the shading material layer in the second light transmission area, and reserving part of the shading material layer positioned on the side wall of the phase shift layer to form a shading side wall sheet.
17. A phase-shifting mask, comprising:
the light-shielding device comprises a transparent substrate, a light-shielding layer and a light-transmitting layer, wherein the transparent substrate is defined with a first light-transmitting area, at least one second light-transmitting area adjacent to the first light-transmitting area and a light-shielding area;
the phase shift layer covers the first light transmission area and the shading area on the transparent substrate, and enables exposure light penetrating through the phase shift layer to generate phase conversion or/and light attenuation;
the shading layer is positioned on the phase shifting layer and covers the shading area;
and the phase shifting side wall sheet is positioned on the side wall of the light shielding layer between the first light transmitting area and the light shielding area, and enables the exposure light penetrating through the phase shifting side wall sheet to generate phase conversion or/and light attenuation.
18. The phase-shifting mask according to claim 17, wherein: the material of transparent substrate includes quartz glass, the material on phase shift layer includes one among molybdenum oxide silicon, molybdenum silicon oxynitride, nitrogen oxygen molybdenum silicon carbide, chromium silicon oxide, chromium silicon oxynitride and nitrogen oxygen chromium silicon carbide, the material of phase shift lateral wall piece includes one among molybdenum silicon oxide silicon, molybdenum silicon oxynitride, nitrogen oxygen molybdenum silicon carbide, chromium silicon oxide, chromium silicon oxynitride and nitrogen oxygen chromium silicon carbide.
19. The phase-shifting mask according to claim 17, wherein: the ratio of the thickness of the phase shift sidewall sheet to the thickness of the light shielding layer is from 0.5 to 1.
20. The phase-shifting mask according to claim 17, wherein: the phase shift layer enables the variation of phase conversion of the exposure light penetrating through the phase shift layer to be between 0 and 180 degrees, and the phase shift side wall piece enables the variation of phase conversion of the exposure light penetrating through the phase shift side wall piece to be between 0 and 180 degrees.
21. The phase-shifting mask according to claim 17, wherein: the phase shift layer enables the proportion of light attenuation generated by exposure light penetrating through the phase shift layer to be between 0 and 80 percent, and the phase shift side wall sheet enables the proportion of light attenuation generated by exposure light penetrating through the phase shift side wall sheet to be between 0 and 80 percent.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110402081.8A CN115202146A (en) | 2021-04-14 | 2021-04-14 | Phase-shifting mask and manufacturing method thereof |
| PCT/CN2022/080333 WO2022218073A1 (en) | 2021-04-14 | 2022-03-11 | Phase-shift mask and manufacturing method therefor |
| JP2023600137U JP3246095U (en) | 2021-04-14 | 2022-03-11 | phase shift mask |
| TW111114326A TWI819571B (en) | 2021-04-14 | 2022-04-14 | Phase-shifting mask and the manufacturing method thereof |
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| CN202110402081.8A CN115202146A (en) | 2021-04-14 | 2021-04-14 | Phase-shifting mask and manufacturing method thereof |
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| CN115202146A true CN115202146A (en) | 2022-10-18 |
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| JP (1) | JP3246095U (en) |
| CN (1) | CN115202146A (en) |
| TW (1) | TWI819571B (en) |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637448A (en) * | 2024-01-26 | 2024-03-01 | 粤芯半导体技术股份有限公司 | Side wall manufacturing method and device, chip and electronic equipment |
| CN117637448B (en) * | 2024-01-26 | 2024-05-03 | 粤芯半导体技术股份有限公司 | Side wall manufacturing method and device, chip and electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR930011099A (en) * | 1991-11-15 | 1993-06-23 | 문정환 | Phase reversal mask manufacturing method |
| JP2000227651A (en) * | 1999-02-05 | 2000-08-15 | Nec Corp | Phase shift mask and its production |
| SG99416A1 (en) * | 2002-03-05 | 2003-10-27 | Asml Netherlands Bv | Apparatus and system for improving phase shift mask imaging performance and associated methods |
| JP2004226893A (en) * | 2003-01-27 | 2004-08-12 | Semiconductor Leading Edge Technologies Inc | Halftone phase shift mask, and exposure method of resist and exposure apparatus of resist using the same |
| WO2013094756A1 (en) * | 2011-12-21 | 2013-06-27 | 大日本印刷株式会社 | Large phase shift mask and method for manufacturing phase shift mask |
| CN104834178A (en) * | 2014-02-12 | 2015-08-12 | 中芯国际集成电路制造(上海)有限公司 | Apparatus and method for preparing photomask |
| CN108345171B (en) * | 2018-02-11 | 2020-01-21 | 京东方科技集团股份有限公司 | Phase shift mask manufacturing method and phase shift mask |
| CN108363270B (en) * | 2018-02-11 | 2023-05-26 | 京东方科技集团股份有限公司 | Phase shift mask plate, array substrate, preparation method of phase shift mask plate and display device |
| US20210026235A1 (en) * | 2018-03-26 | 2021-01-28 | Hoya Corporation | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
| CN112099308A (en) * | 2020-10-22 | 2020-12-18 | 泉芯集成电路制造(济南)有限公司 | Attenuated phase shift mask and manufacturing method thereof |
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2021
- 2021-04-14 CN CN202110402081.8A patent/CN115202146A/en active Pending
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2022
- 2022-03-11 WO PCT/CN2022/080333 patent/WO2022218073A1/en active Application Filing
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117637448A (en) * | 2024-01-26 | 2024-03-01 | 粤芯半导体技术股份有限公司 | Side wall manufacturing method and device, chip and electronic equipment |
| CN117637448B (en) * | 2024-01-26 | 2024-05-03 | 粤芯半导体技术股份有限公司 | Side wall manufacturing method and device, chip and electronic equipment |
Also Published As
| Publication number | Publication date |
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| JP3246095U (en) | 2024-03-21 |
| TWI819571B (en) | 2023-10-21 |
| WO2022218073A1 (en) | 2022-10-20 |
| TW202248744A (en) | 2022-12-16 |
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