CN103988307B - 掩模数目减少的自对准金属氧化物tft - Google Patents
掩模数目减少的自对准金属氧化物tft Download PDFInfo
- Publication number
- CN103988307B CN103988307B CN201280045617.4A CN201280045617A CN103988307B CN 103988307 B CN103988307 B CN 103988307B CN 201280045617 A CN201280045617 A CN 201280045617A CN 103988307 B CN103988307 B CN 103988307B
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- etch
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 74
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 133
- 239000002184 metal Substances 0.000 claims abstract description 103
- 229910052751 metal Inorganic materials 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 72
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000005530 etching Methods 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 30
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- 238000000151 deposition Methods 0.000 claims abstract description 26
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- 239000003989 dielectric material Substances 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 16
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
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- 230000015572 biosynthetic process Effects 0.000 claims description 2
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- 230000003628 erosive effect Effects 0.000 claims description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/195,882 US8273600B2 (en) | 2009-04-21 | 2011-08-02 | Self-aligned metal oxide TFT with reduced number of masks |
US13/195,882 | 2011-08-02 | ||
PCT/US2012/049238 WO2013019910A1 (en) | 2011-08-02 | 2012-08-02 | Self-aligned metal oxide tft with reduced number of masks |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103988307A CN103988307A (zh) | 2014-08-13 |
CN103988307B true CN103988307B (zh) | 2017-03-08 |
Family
ID=47629673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280045617.4A Expired - Fee Related CN103988307B (zh) | 2011-08-02 | 2012-08-02 | 掩模数目减少的自对准金属氧化物tft |
Country Status (4)
Country | Link |
---|---|
US (1) | US8273600B2 (zh) |
KR (1) | KR20140052005A (zh) |
CN (1) | CN103988307B (zh) |
WO (1) | WO2013019910A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9318614B2 (en) * | 2012-08-02 | 2016-04-19 | Cbrite Inc. | Self-aligned metal oxide TFT with reduced number of masks and with reduced power consumption |
US9412623B2 (en) * | 2011-06-08 | 2016-08-09 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts and reliability |
TWI483344B (zh) | 2011-11-28 | 2015-05-01 | Au Optronics Corp | 陣列基板及其製作方法 |
KR20130136063A (ko) | 2012-06-04 | 2013-12-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법 |
US9379247B2 (en) * | 2012-06-28 | 2016-06-28 | Cbrite Inc. | High mobility stabile metal oxide TFT |
US8936973B1 (en) * | 2013-11-14 | 2015-01-20 | Cbrite Inc. | Anodization of gate with laser vias and cuts |
CN104037129A (zh) * | 2014-06-20 | 2014-09-10 | 深圳市华星光电技术有限公司 | Tft背板的制造方法及tft背板结构 |
CN105720105A (zh) * | 2014-12-02 | 2016-06-29 | 昆山国显光电有限公司 | 一种底栅型薄膜晶体管及其制备方法 |
CN105895534B (zh) | 2016-06-15 | 2018-10-19 | 武汉华星光电技术有限公司 | 薄膜晶体管的制备方法 |
CN114744024B (zh) * | 2022-06-13 | 2022-08-26 | 深圳市时代速信科技有限公司 | 一种半导体器件及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6043113A (en) * | 1995-07-31 | 2000-03-28 | 1294339 Ontario, Inc. | Method of forming self-aligned thin film transistor |
CN102130009A (zh) * | 2010-12-01 | 2011-07-20 | 北京大学深圳研究生院 | 一种晶体管的制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9919913D0 (en) * | 1999-08-24 | 1999-10-27 | Koninkl Philips Electronics Nv | Thin-film transistors and method for producing the same |
TWI294689B (en) * | 2005-09-14 | 2008-03-11 | Ind Tech Res Inst | Method of tft manufacturing and a base-board substrate structure |
US7605026B1 (en) * | 2007-12-03 | 2009-10-20 | Cbrite, Inc. | Self-aligned transparent metal oxide TFT on flexible substrate |
WO2009117438A2 (en) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
US7977151B2 (en) * | 2009-04-21 | 2011-07-12 | Cbrite Inc. | Double self-aligned metal oxide TFT |
-
2011
- 2011-08-02 US US13/195,882 patent/US8273600B2/en active Active
-
2012
- 2012-08-02 KR KR1020147005766A patent/KR20140052005A/ko not_active Application Discontinuation
- 2012-08-02 WO PCT/US2012/049238 patent/WO2013019910A1/en active Application Filing
- 2012-08-02 CN CN201280045617.4A patent/CN103988307B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6043113A (en) * | 1995-07-31 | 2000-03-28 | 1294339 Ontario, Inc. | Method of forming self-aligned thin film transistor |
CN102130009A (zh) * | 2010-12-01 | 2011-07-20 | 北京大学深圳研究生院 | 一种晶体管的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20120168744A1 (en) | 2012-07-05 |
US8273600B2 (en) | 2012-09-25 |
CN103988307A (zh) | 2014-08-13 |
WO2013019910A1 (en) | 2013-02-07 |
KR20140052005A (ko) | 2014-05-02 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: California, USA Patentee after: ABC Services Group Co. Address before: California, USA Patentee before: ABC Service Co. |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190625 Address after: The British Virgin Islands of Tortola Patentee after: Fantasy Shine Co.,Ltd. Address before: California, USA Patentee before: ABC Services Group Co. Effective date of registration: 20190625 Address after: California, USA Patentee after: ABC Service Co. Address before: California, USA Patentee before: Cbrite Inc. |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170308 Termination date: 20210802 |
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CF01 | Termination of patent right due to non-payment of annual fee |