CN103985771A - Two-sided electrode type solar cell and solar cell array - Google Patents

Two-sided electrode type solar cell and solar cell array Download PDF

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Publication number
CN103985771A
CN103985771A CN201410127670.XA CN201410127670A CN103985771A CN 103985771 A CN103985771 A CN 103985771A CN 201410127670 A CN201410127670 A CN 201410127670A CN 103985771 A CN103985771 A CN 103985771A
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electrode
solar cell
double
silicon substrate
type silicon
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花国然
王强
朱海峰
程实
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Nantong University
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Nantong University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention provides a two-sided electrode type solar cell and a solar cell array. The two-sided electrode type solar cell comprises a P-type silicon substrate. The front surface and the back surface of the P-type silicon substrate are coated with an N-type conductor. Diffusion is performed on the interface between the P-type silicon substrate and the N-type conductor to form a PN junction. Partial regions of the upper layer of the P-type silicon substrate are provided with an electrode channel. A positive electrode is formed in the electrode channel. The region which is not provided with the positive electrode is provided with a top electrode. The lower layer of the P-type silicon substrate is provided with a bottom electrode. The positive electrode is connected with the bottom electrode or the top electrode through an external circuit. Compared with the existing double PN junction type solar cell, the positive electrode is added, the current loss is reduced, and the two-sided electrode type solar cell is surrounded by an annular PN junction, so the light absorptivity can be improved, and at the same time, two steps including plasma edge etching and back junction removing are removed in the manufacture process, so the process is simplified.

Description

Double-face electrode solar cell and solar battery array
Technical field
The present invention relates to area of solar cell, relate in particular to a kind of double-face electrode solar cell and solar battery array.
Background technology
Along with expanding economy, people's living standard is more and more higher, more and more to the demand of the energy, simultaneously due to the lasting shortage of global energy and in recent years environmental consciousness come back gradually, therefore how to provide at present environmental protection, totally do not lose efficacy again can the energy be the subject under discussion that people are concerned about most.In various alternative energies, utilize sunlight to produce the solar cell of electric energy via the conversion of photoelectric energy, be the technology of the extensive use of current institute and positive research and development.
Along with related industry continues to drop into research and development solar cell, develop double-sided solar battery, by the two-sided design that is subject to light, made two surfaces of solar cell all can receive light, and solar energy is converted to electric energy, and then energy that can more efficient lifting solar cell.But traditional double-sided solar battery need to form positive and negative electrode by the process such as etching, punching, complex process, front electrode is connected by PN junction with backplate, and current loss is larger, and cannot on large-area battery, prepare.
A kind of double-face electrode solar battery process provided by the invention is simple, and on original basis, increase a positive electrode, convenient and saving material in the process using, the loss of electric current is also less, all more convenient in large area preparation and use procedure.
Summary of the invention
Provide hereinafter about brief overview of the present invention, to the basic comprehension about some aspect of the present invention is provided.Should be appreciated that this general introduction is not about exhaustive general introduction of the present invention.It is not that intention is determined key of the present invention or pith, and nor is it intended to limit the scope of the present invention.Its object is only that the form of simplifying provides some concept, using this as the preorder in greater detail of discussing after a while.
The invention provides a kind of double-face electrode solar cell, this battery reduces with respect to existing pair of PN junction solar cell fabrication process step, and has increased a positive electrode, is convenient to large area preparation when can reducing the loss of electric current.
The invention provides a kind of double-face electrode solar cell, comprising: P type silicon substrate, described P type silicon substrate front and rear surfaces is coated with N-type conductor, and has diffuseed to form PN junction at P type silicon substrate and N-type conductor boundary place; The subregion on described P type silicon substrate upper strata is formed with electrode channel, in described electrode channel, is formed with positive electrode, is not formed with on the region of positive electrode and is formed with top electrode; Described P type silicon substrate lower floor is formed with hearth electrode, and described positive electrode is connected with described hearth electrode or described top electrode by external circuit.
In addition, the present invention also provides a kind of solar battery array, comprise the described double-face electrode solar cell of multiple array distribution, the positive electrode of at least one double-face electrode solar cell and adjacent another double-face electrode solar cell, the positive electrode of at least one double-face electrode solar cell is connected by external circuit with the hearth electrode of adjacent another double-face electrode solar cell.
Double-face electrode solar cell provided by the invention, comparing existing pair of PN junction solar cell has increased positive electrode, and described positive electrode is connected by external circuit with original two electrodes, and circuit connects convenient, simultaneously also corresponding the reducing of loss of electric current; And described solar cell from which angle is seen all and surrounded by an annular PN junction, and the absorptivity of light has been increased, and reduced manufacture process ionic medium and carved limit and remove these two steps of back of the body knot, technique has been simplified.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 to Fig. 5 is double-face electrode solar cell preparation process structure chart of the present invention
Reference numeral:
1-P type silicon substrate; 2-N type conductor; 3-oxide layer; 4-antireflective coating;
5-positive electrode; 6-hearth electrode; 7-top electrode;
Embodiment
For making object, technical scheme and the advantage of the embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiment.The element of describing in an accompanying drawing of the present invention or a kind of execution mode and feature can combine with element and feature shown in one or more other accompanying drawing or execution mode.It should be noted that for purposes of clarity, in accompanying drawing and explanation, omitted expression and the description of unrelated to the invention, parts known to persons of ordinary skill in the art and processing.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite of not paying creative work, belongs to the scope of protection of the invention.
Embodiment mono-:
The structural representation that is illustrated in figure 5 double-face electrode solar cell provided by the invention, comprising: P type silicon substrate 1, and described P type silicon substrate front and rear surfaces is coated with N-type conductor 2, and has diffuseed to form PN junction at P type silicon substrate 1 and N-type conductor 2 interfaces; The subregion on described P type silicon substrate upper strata is formed with electrode channel, is formed with positive electrode 5 in described electrode channel, is not formed with on the region of positive electrode and is formed with top electrode 7; Described P type silicon substrate lower floor is formed with hearth electrode 6, and described positive electrode is connected with described hearth electrode or described top electrode by external circuit.
As shown in Figure 1, first provide P type silicon substrate.
Positive electrode 5 and the top electrode 7 increasing with respect to prior art is all arranged on the first surface of described N-type conductor 2, so the first surface of the solar cell that this programme provides has two electrodes, existing positive electrode has again negative electrode, in use two of a upper surface electrode can be connected or other methods of attachment with other elements; Described hearth electrode 6 is connected by PN junction with positive electrode 5, top electrode 7 is connected with positive electrode 5 by PN junction, when use, reduced the loss of electric current by the connection of upper surface top electrode, compare the electrode connecting by two PN junctions, it is higher that such connected mode solar energy converts service efficiency after electric energy to.
Above-mentioned PN junction between described P type silicon substrate 1 and N-type conductor 2 obtains by twice diffusion, described PN junction is through forming P type silicon substrate successively forward and backward two sides diffusion N-type conductor, first the one side in described P type conductor positive and negative is spread, then P type conductor is turned over to turnback, another side to P type conductor spreads, obtain described PN junction, its junction depth of described PN junction is between 200～500 microns.
The disposable diffusion of the existing technique of comparing, double-face electrode solar cell provided by the invention has adopted twice diffusion in diffusion obtains the process of PN junction, and twice diffusion all realizes based on same oxide layer.First the first surface of described P type silicon substrate is faced toward to air port, the first surface of silicon substrate is spread, more described silicon substrate is turned over to turnback, the second surface of described P type silicon substrate, facing to air port, is spread the second surface of P type conductor; Above-mentioned twice diffusion is in order to make carrier diffusion even, also can see that uncompleted battery is surrounded by an annular PN junction simultaneously, there is PN junction upper and lower surfaces, realize the absorption of the light to different wave length, the shorter light of wavelength is absorbed by the PN junction of upper surface, and the light that wavelength is grown is absorbed by the PN junction of lower surface.
Being diffused as described in above-mentioned steps all has the silicon substrate of suede structure to be placed in diffusion furnace tow sides to spread, and diffuse source adopts liquid POCl 3, forming the diffusion layer that is coated described silicon substrate, its junction depth of the PN junction diffusing out is between 200～500 microns.
As shown in Figure 2, the subregion on described P type silicon substrate upper strata is formed with the P type oxide layer 3 as electrode channel.
Described oxide layer 3 is formed at described P type conductor 1 upper strata, retain P type conductor 1 top section oxide layer, and the oxide layer at other positions of etching, the oxide layer 3 retaining is as the positive electrode passage on P type conductor upper strata, remove below in the step of surperficial phosphorosilicate glass and also the oxide layer retaining is removed, generate a passage, this passage is used for type metal electrode, as shown in Figure 3.
Positive electrode 5 is formed at described P type conductor upper strata and remains with oxide layer, and removes the place of leaving passage after described oxide layer; As shown in Figure 5, top electrode 7 is formed at described P type conductor upper strata and forms other positions outside described positive electrode.
The oxide layer of described reservation is for reserve channel forms described positive electrode, and this programme does not need, by silicon substrate punching is added to electrode, only the oxide layer of needs to be stayed etched time just passable.
Optionally, described positive electrode 5 and top electrode 7 metals are silver, and hearth electrode 7 metals are aluminium; Top electrode and positive electrode are printed on silver metal by the method for silk screen printing the upper surface of described silicon substrate, positive electrode is printed in the passage of oxide layer removal, top electrode is printed on other positions except passage place, and positive electrode can not be connected or contact with top electrode.Conventionally be printed as grid line shape, when realizing good contact, make light have higher transmitance; The full whole lower surface of metallic aluminium printing, object is in order to overcome due to the battery resistance causing of connect, and minimizing lower surface is compound.Form ohmic contact to silicon substrate surface printing metal electrode, electric current can effectively be exported.
Optionally, described N-type conductive surface is also coated with antireflective coating 4;
Optionally, described antireflective coating is Si 3n 4film.
In the process of described formation oxide layer 3 and diffusion, can generate phosphorosilicate glass at conductive surface before, be mixed with P 2o 5siO 2layer, need be removed, and then at surface passivation coated with antireflection film, in order to reduce charge carrier the compound of conductive surface and to reduce incident reflection of light, increases the absorption to incident light, has increased to luminous energy utilance; Described antireflective coating adopts chemical vapor deposition techniques.
And as shown in Figure 4, described antireflective coating surrounds whole N-type conductor, forms positive electrode in passage, ensure that positive electrode is only connected with P type conductor, can not be connected and cause short circuit with N-type conductor.
Optionally, the whole face of described N-type conductor lower floor is printed with aluminium electrode.
Conventional top electrode adopts the method for silk screen printing, silver metal is printed on to the upper strata of described N-type conductor, is conventionally printed as grid line shape, makes light have higher transmitance when realizing good contact, is more easily absorbed by PN junction; Described hearth electrode adopts the full whole lower floor of metallic aluminium printing, and object is in order to overcome due to the connect resistance that causes and effectively reduce the compound of lower surface of battery.
Optionally, described P type silicon substrate upper and lower surface is formed with matte; Make matte on described P type silicon substrate surface, described matte is coated whole silicon substrate, forms anti-reflection structure, and object is to reduce the reflection of incident light at silicon face, increases the absorption of silicon substrate to incident light.Make matte and utilized this characteristic of the anisotropic etch of silicon in dilute NaOH solution.
Optionally, the doping content of described oxide layer materials is higher than the doping content of described P type silicon substrate.
Double-face electrode solar cell fabrication process of the present invention reduces relatively, the top electrode 7 increasing at upper surface, so described solar cell upper surface has two electrodes, existing positive electrode has again negative electrode, lower surface has a negative electrode, in the process using, can directly connect positive and negative two electrodes of described upper surface, or the positive and negative electrode of upper surface can be connected with other electrodes respectively when large area is used.The electrode of more existing double-sided PN junction solar battery need to be connected by one or more PN junction, and the loss of electric current is larger, and this programme is by increasing a positive electrode, and in the use procedure of battery, the loss of electric current reduces; And in the time that multiple solar cells are connected use, the mode that electrode is connected can be varied, and upper surface exists positive and negative electrode line also saving resource easy to connect simultaneously.
Embodiment bis-:
The present invention has also announced a kind of solar battery array, comprise the double-face electrode solar cell of multiple array distribution, the positive electrode of at least one double-face electrode solar cell and adjacent another double-face electrode solar cell, the positive electrode of at least one double-face electrode solar cell is connected by external circuit with the hearth electrode of adjacent another double-face electrode solar cell.
On double-face electrode described in this programme is solar cell integrated, see three electrodes, positive electrode, top electrode and hearth electrode, in use, positive electrode can be connected with other electrodes by external circuit.In the time that large area is prepared solar panel, need to use multiple above-mentioned solar cells and be arranged on solar panel, may present the arrangement mode of N*M.Optionally, described external circuit is wire.
For example 3*3 arranges the solar panel of above-mentioned solar cell.In the time of the described solar panel of preparation, do not need by interior circuit, the electrode of single solar cell to be coupled together completely, the positive electrode that the first surface of described battery increases can be used as connection, connects adjacent battery, without passing through interior circuit, and connected mode can variation.
Like this, can select in use the easiest, save the method for attachment of material, and in the time of the more large-area solar panel of preparation same processing, can be because of the size of plate area inconvenience.
In the various embodiments described above of the present invention, the sequence number of embodiment and/or sequencing are only convenient to describe, and do not represent the quality of embodiment.Description to each embodiment all emphasizes particularly on different fields, and there is no the part of detailed description in certain embodiment, can be referring to the associated description of other embodiment.
Should emphasize, term " comprises/comprises " existence that refers to feature, key element, step or assembly while use herein, but does not get rid of the existence of one or more further feature, key element, step or assembly or add.
Finally it should be noted that: although described above the present invention and advantage thereof in detail, be to be understood that in the case of not exceeding the spirit and scope of the present invention that limited by appended claim and can carry out various changes, alternative and conversion.And scope of the present invention is not limited only to the specific embodiment of the described process of specification, equipment, means, method and step.One of ordinary skilled in the art will readily appreciate that from disclosure of the present invention, can use carry out with the essentially identical function of corresponding embodiment described herein or obtain process, equipment, means, method or step result essentially identical with it, that existing and will be developed future according to the present invention.Therefore, appended claim is intended to comprise such process, equipment, means, method or step in their scope.

Claims (10)

1. a double-face electrode solar cell, is characterized in that, comprising:
P type silicon substrate, described P type silicon substrate front and rear surfaces is coated with N-type conductor, and has diffuseed to form PN junction at P type silicon substrate and N-type conductor boundary place;
The subregion on described P type silicon substrate upper strata is formed with electrode channel, in described electrode channel, is formed with positive electrode, is not formed with on the region of positive electrode and is formed with top electrode;
Described P type silicon substrate lower floor is formed with hearth electrode, and described positive electrode is connected with described hearth electrode or described top electrode by external circuit.
2. double-face electrode solar cell according to claim 1, is characterized in that, described PN junction is through forming P type silicon substrate successively forward and backward two sides diffusion N-type conductor, and the junction depth of the PN junction diffuseing to form is between 200～500 microns.
3. double-face electrode solar cell according to claim 1, is characterized in that, described N-type conductive surface is also coated with antireflective coating.
4. double-face electrode solar cell according to claim 3, is characterized in that, described antireflective coating is Si 3n 4film.
5. double-face electrode solar cell according to claim 1, is characterized in that, described positive electrode and top electrode are silver electrode, and described hearth electrode is aluminium electrode.
6. double-face electrode solar cell according to claim 5, is characterized in that, the whole face of described N-type conductor lower floor is printed with aluminium electrode.
7. double-face electrode solar cell according to claim 1, is characterized in that, described P type silicon substrate upper and lower surface is formed with matte.
8. double-face electrode solar cell according to claim 1, is characterized in that, the doping content of described oxide layer materials is higher than the doping content of described P type silicon substrate.
9. a solar battery array, it is characterized in that, comprise the double-face electrode solar cell as described in multiple array distribution as arbitrary in claim 1-8, the positive electrode of at least one double-face electrode solar cell and adjacent another double-face electrode solar cell, the positive electrode of at least one double-face electrode solar cell is connected by external circuit with the hearth electrode of adjacent another double-face electrode solar cell.
10. solar battery array according to claim 9, is characterized in that, described external circuit is wire.
CN201410127670.XA 2014-03-31 2014-03-31 Two-sided electrode type solar cell and solar cell array Pending CN103985771A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300440A (en) * 2007-05-29 2008-12-11 Sanyo Electric Co Ltd Solar cell, and solar cell module
KR20110029827A (en) * 2009-09-16 2011-03-23 주식회사 효성 Method for manufacturing of back contact solar cells using plating
CN102171838A (en) * 2009-03-02 2011-08-31 Lg电子株式会社 Solar cell and method of manufacturing the same
CN102484146A (en) * 2009-09-10 2012-05-30 Q-电池公司 Solar cell
CN203232880U (en) * 2013-05-13 2013-10-09 南通大学 Silicon-based buried-gate three-electrode thin-film solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300440A (en) * 2007-05-29 2008-12-11 Sanyo Electric Co Ltd Solar cell, and solar cell module
CN102171838A (en) * 2009-03-02 2011-08-31 Lg电子株式会社 Solar cell and method of manufacturing the same
CN102484146A (en) * 2009-09-10 2012-05-30 Q-电池公司 Solar cell
KR20110029827A (en) * 2009-09-16 2011-03-23 주식회사 효성 Method for manufacturing of back contact solar cells using plating
CN203232880U (en) * 2013-05-13 2013-10-09 南通大学 Silicon-based buried-gate three-electrode thin-film solar cell

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Application publication date: 20140813