CN103971736B - 编程分栅位单元 - Google Patents

编程分栅位单元 Download PDF

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Publication number
CN103971736B
CN103971736B CN201410033765.5A CN201410033765A CN103971736B CN 103971736 B CN103971736 B CN 103971736B CN 201410033765 A CN201410033765 A CN 201410033765A CN 103971736 B CN103971736 B CN 103971736B
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China
Prior art keywords
coupled
voltage
selection
storage unit
grid
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CN201410033765.5A
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English (en)
Chinese (zh)
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CN103971736A (zh
Inventor
C·M·洪
R·J·西兹代克
B·A·温斯蒂亚德
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NXP USA Inc
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NXP USA Inc
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Publication of CN103971736A publication Critical patent/CN103971736A/zh
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
CN201410033765.5A 2013-01-28 2014-01-24 编程分栅位单元 Active CN103971736B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/751,548 US8885403B2 (en) 2013-01-28 2013-01-28 Programming a split gate bit cell
US13/751,548 2013-01-28

Publications (2)

Publication Number Publication Date
CN103971736A CN103971736A (zh) 2014-08-06
CN103971736B true CN103971736B (zh) 2019-10-18

Family

ID=51222804

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410033765.5A Active CN103971736B (zh) 2013-01-28 2014-01-24 编程分栅位单元

Country Status (3)

Country Link
US (1) US8885403B2 (enExample)
JP (1) JP6233971B2 (enExample)
CN (1) CN103971736B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018049674A (ja) * 2016-09-21 2018-03-29 ルネサスエレクトロニクス株式会社 半導体装置
US10147734B1 (en) * 2017-08-30 2018-12-04 Cypress Semiconductor Corporation Memory gate driver technology for flash memory cells

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6091634A (en) * 1997-04-11 2000-07-18 Programmable Silicon Solutions Compact nonvolatile memory using substrate hot carrier injection
CN1542853A (zh) * 2003-04-18 2004-11-03 ��ʽ���������Ƽ� 数据处理器
US7236398B1 (en) * 2005-08-31 2007-06-26 Altera Corporation Structure of a split-gate memory cell

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003046002A (ja) * 2001-07-26 2003-02-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
JP4647175B2 (ja) * 2002-04-18 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP5300773B2 (ja) * 2010-03-29 2013-09-25 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US8643123B2 (en) 2011-04-13 2014-02-04 Freescale Semiconductor, Inc. Method of making a semiconductor structure useful in making a split gate non-volatile memory cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6091634A (en) * 1997-04-11 2000-07-18 Programmable Silicon Solutions Compact nonvolatile memory using substrate hot carrier injection
CN1542853A (zh) * 2003-04-18 2004-11-03 ��ʽ���������Ƽ� 数据处理器
US7236398B1 (en) * 2005-08-31 2007-06-26 Altera Corporation Structure of a split-gate memory cell

Also Published As

Publication number Publication date
CN103971736A (zh) 2014-08-06
US8885403B2 (en) 2014-11-11
US20140211559A1 (en) 2014-07-31
JP6233971B2 (ja) 2017-11-22
JP2014146407A (ja) 2014-08-14

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Applicant before: Fisical Semiconductor Inc.

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