CN103964365B - 用于密封环结构的方法和装置 - Google Patents
用于密封环结构的方法和装置 Download PDFInfo
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- CN103964365B CN103964365B CN201310162964.1A CN201310162964A CN103964365B CN 103964365 B CN103964365 B CN 103964365B CN 201310162964 A CN201310162964 A CN 201310162964A CN 103964365 B CN103964365 B CN 103964365B
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Classifications
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Abstract
公开了用于密封环结构的方法和装置。可以在第一晶圆和/或第二晶圆上形成晶圆密封环。在第一晶圆和/或第二晶圆中的一个或两个上可以形成有一个或多个管芯。晶圆密封环可以围绕对应的晶圆的管芯形成。一个或多个管芯密封环可以围绕一个或多个管芯形成。晶圆密封环可以形成为高度可以约等于在第一晶圆和/或第二晶圆上形成的一个或多个管芯密封环的高度。可以形成晶圆密封环以实现共晶或者熔融接合工艺。可以将第一晶圆和第二晶圆接合在一起以在第一晶圆和第二晶圆之间形成密封环结构。密封环结构可以在第一晶圆和第二晶圆之间提供密封。
Description
相关申请的交叉参考
本申请涉及于2013年2月5日提交的专利申请序列号为“13/759,201”、名称为“Method and Apparatus for a Wafer Seal Ring(用于晶圆密封环的方法和装置)”共同待决的美国专利申请,该申请被普通转让给本申请的受让人,在此结合该申请作为参考。
技术领域
本发明涉及半导体制造工艺,具体而言,涉及用于密封环结构的方法和装置。
背景技术
在半导体制造工艺中,在半导体晶圆上的管芯区域中制造集成电路(也被称为“管芯”)。在通过切割半导体晶圆来分离管芯之前半导体晶圆经历了许多加工步骤。这些加工步骤可以包括光刻、蚀刻、掺杂、研磨、片式切割、管芯-切割和/或沉积不同的材料。这些工艺步骤可以包括湿法和干法加工步骤。半导体晶圆和/或分离的管芯可以在彼此的顶部上相互堆叠或者接合以形成三维(“3D”)IC。例如,其内形成有微电子器件的半导体晶圆可以接合至其内形成有微电子机械系统(“MEMS”)器件的另一半导体晶圆。在接合之后,晶圆被切割或分成接合管芯,其是由来自这两个晶圆的器件组成的。在另一个实例中,其内形成有MEMS器件的半导体晶圆还可以与其内形成有腔或凹槽的另一覆盖晶圆(capping wafer)接合。在接合之后,晶圆被切割或分成接合管芯,其是由MEMS器件和相应的覆盖件(cap)组成的。在加工和接合步骤期间,污染物、化学物质或者残留物可能渗入管芯区域并且可能对其中形成的管芯的产品收率造成不利影响。
发明内容
为了解决现有技术中存在的问题,根据本发明的一方面,提供了一种装置,包括:一对接合晶圆,在所述晶圆中的至少一个晶圆上形成有多个管芯;多个管芯密封环,其中每一个所述管芯密封环都围绕所述多个管芯中的每一个管芯形成;以及晶圆密封环,位于所述接合晶圆之间,所述晶圆密封环具有均匀的宽度,所述晶圆密封环形成为围绕所述多个管芯密封环。
在所述的装置中,所述晶圆密封环是由半导体材料、共晶材料、介电材料或者它们的组合形成。
在所述的装置中,在所述一对接合晶圆中的至少一个晶圆中形成有MEMS电子器件。
在所述的装置中,所述晶圆密封环的高度约等于所述多个管芯密封环的高度。
在所述的装置中,所述晶圆密封环包括多个晶圆密封环。所述的装置进一步包括位于所述接合晶圆之间的一个或多个对准柱,其中每一个所述对准柱都位于一对晶圆密封环之间。
在所述的装置中,所述晶圆密封环具有围绕所述多个管芯的圆形形状。
在所述的装置中,所述晶圆密封环包括围绕所述多个管芯的多个邻接的直线部分。
根据本发明的另一方面,提供了一种装置,包括:晶圆,在所述晶圆上形成有多个管芯;多个管芯密封环,每一个管芯密封环都围绕所述多个管芯中的每一个管芯形成;以及晶圆密封环,所述晶圆密封环具有均匀的宽度,其中,所述晶圆密封环形成为围绕所述多个管芯。
在所述的装置中,所述晶圆密封环的高度约等于所述多个管芯密封环的高度。
在所述的装置中,所述晶圆密封环包括多个晶圆密封环。
在所述的装置中,所述晶圆密封环具有圆形形状。
在所述的装置中,所述晶圆密封环包括围绕所述多个管芯的多个邻接的直线部分。
在所述的装置中,所述多个管芯包括在其中形成的MEMS电子器件。
在所述的装置中,所述晶圆密封环包括:第一晶圆密封环结构部分;以及第二晶圆密封环结构部分,形成在所述第一晶圆密封环结构部分上,其中所述晶圆密封环的总高度约等于多个管芯密封环的高度。在所述的装置中,所述晶圆密封环的第二结构部分由共晶合金材料或者低熔点金属材料形成。
根据本发明的又一方面,提供了一种方法,包括:在晶圆上形成多个管芯;在所述晶圆上形成多个管芯密封环,每一个管芯密封环都围绕对应的管芯形成;以及在所述晶圆上形成晶圆密封环,其中所述晶圆密封环围绕所述多个管芯并且形成为高度约等于所述多个管芯密封环的高度。
在所述的方法中,所述晶圆密封环包括围绕所述多个管芯的多个晶圆密封环。
在所述的方法中,所述多个管芯包括在其中形成的MEMS电子器件。
在所述的方法中,形成所述晶圆密封环包括:在所述晶圆上形成第一晶圆密封环结构部分;以及在所述第一晶圆密封环结构部分上形成第二晶圆密封环结构部分。
附图说明
为了更充分地理解本发明实施例及其优点,现将结合附图所作的以下描述作为参考,其中:
图1示出根据一个实施例的晶圆密封环的主视图;
图2示出根据另一实施例的另一晶圆密封环的主视图;
图3A-图3C示出根据一个实施例形成晶圆密封环的中间阶段的截面图;
图4A-图4D示出根据各种实施例用于形成晶圆密封环的中间阶段的截面图;以及
图5A-图5D示出根据各种实施例用于形成晶圆密封环的中间阶段的截面图。
具体实施方式
以下详细论述了本发明的实施例的制造和使用。然而,应该理解,本发明提供了许多可以在各种具体环境中实现的可应用的发明构思。所论述的具体实施例仅仅是制造和使用本发明的主题的示例性具体方式,而不用于限制不同实施例的范围。
在详细描述本发明的示例性实施例之前,在大体上论述各种实施例及其有利特征。例如,在一些实施例中,可以实施晶圆级接合,其中一个或多个晶圆可以是其上形成有管芯的加工晶圆,其中每一管芯都可以包括电子器件和/或电路。应该注意,虽然本文所论述的实施例是在接合加工晶圆的情况下描述,但是其他实施例可以接合加工或未加工的晶圆、载具晶圆、中介层、其他类型的衬底等。
在一个实施例中,可以围绕晶圆上的一个或多个管芯形成管芯密封环,从而为接合晶圆的每一管芯密封环内的管芯提供了管芯级保护。其上形成有管芯的晶圆还可以包括用于连接至可以形成在管芯内的电子器件和/或测试可以形成在管芯内的电子器件的功能的测试焊盘。测试焊盘可以位于环绕(一个或多个)管芯的管芯接合焊盘或环的外部,诸如晶圆的划线内。
在接合一对晶圆之后,可以进一步加工接合结构,例如以使晶圆变薄、形成电连接、接合额外的晶圆和/或衬底等。过去用于在晶圆之间形成密封的技术利用了沿着一对接合晶圆的边缘夹紧来密封晶圆。过去的这种技术产生了围绕管芯的形状不规则的单一密封环。接合后加工可能使测试焊盘和管芯接合焊盘暴露于可能腐蚀或损伤焊盘的化学物质或者加工残留物。本文所描述的实施例的优点包括利用了管芯密封环和晶圆密封环的双环管芯保护,以及使用晶圆密封环和/或密封环结构为管芯接合焊盘、管芯密封环、测试焊盘等提供保护。
现参考图1,示出根据一个实施例具有晶圆密封环110的晶圆100。如图1所示,可以在晶圆100上形成晶圆密封环110从而使得晶圆密封环110围绕一个或多个管芯120。可以在管芯120和晶圆100的外侧边缘之间形成晶圆密封环110。图1进一步示出环绕一个或多个管芯120中的每一个管芯的管芯密封环122。每一个管芯120都可以电连接至一个或多个导电测试焊盘124,其可以提供电连接以测试和/或验证可以形成在管芯120中的电子器件(未示出)的功能。图1示出测试焊盘124设置在管芯密封环122的外部是用于说明的目的,而在其他实施例中,测试焊盘124可以设置在管芯密封环122的内部和/或外部。
晶圆密封环110(如图1所示)可以形成为具有描绘围绕管芯120的周界轮廓的圆形形状。晶圆密封环110可以具有大致均匀的宽度W。可以根据未被管芯120占据的晶圆100的区域、用于形成晶圆密封环110的设计规则和/或设备限制来设置晶圆密封环110的宽度W。在一个不打算限制本文所描述的实施例的示例性实例中,宽度W可以在约30μm至约80μm的范围内。
图1示出的用于晶圆密封环110的单一的圆形形状仅用于说明的目的。在其他实施例中,晶圆密封环110可以包括多个圆形形状,诸如依次围绕管芯120且在管芯120和晶圆100的外侧边缘之间形成的多个同心圆形环。
晶圆密封环110可以具有任何合适的形状。例如,图2示出根据另一实施例具有晶圆密封环210的晶圆200的主视图。如图2所示,晶圆200可以包括一个或多个管芯220,其中管芯密封环222围绕一个或多个管芯220中的每一个管芯。每一个管芯220都可以电连接至一个或多个导电测试焊盘224,其可以提供电连接以测试和/或验证可以在管芯220中形成的电子器件(未示出)的功能。
在如图2所示的实施例中,可以以可以使用多个邻接部分(举例来说,诸如直线部分)描绘围绕多个管芯220的周界的轮廓的方式来形成晶圆密封环210。可以在多个管芯220和晶圆200的外侧边缘之间形成晶圆密封环210。晶圆密封环210可以具有大致均匀的宽度W。可以根据未被管芯220占据的晶圆200的区域、用于形成晶圆密封环210的设计规则和/或设备限制来设置晶圆密封环210的宽度W。在不意为限制本文所描述的实施例的示例性的实例中,宽度W可以处在约30μm至约80μm的范围内。
图2示出的单个晶圆密封环210仅用于说明的目的。在其他实施例中,晶圆密封环210可以包括多个环(未示出),其可以是围绕多个管芯220的多边形或圆形。应该注意,多个环可以使用各种形状。例如,晶圆可以在圆形环内部具有多边形环等等。图1和图2示出的晶圆密封环的形状仅用于说明的目的,而不意为对本文的限制。其他实施例可以使用其他形状。
在各种实施例中,晶圆100(图1)和/或晶圆200(图2)可以是中介层、器件晶圆、其中形成有MEMS器件的晶圆、操作晶圆(handle wafer)等。在各种实施例中,形成晶圆密封环110、210的材料可以实现使用共晶或熔融接合工艺接合至另一晶圆(未示出)。在各种实施例中,晶圆密封环110、210可以包括围绕多个管芯120、220在多个管芯120、220和相应的晶圆100、200的边缘之间形成的多个同心形状的结构(未示出)。
图3A-图3C示出根据一个实施例形成晶圆密封环的中间阶段的截面图。首先参考图3A,第一晶圆310可以包括具有第一电子器件层313的第一衬底311、和/或一个或多个第一互连件312。如对第一晶圆310所描述的组成、连接和层仅用于说明的目的而不意为对第一晶圆310的具体限制。图3A和图3C仅示出第一晶圆310的一部分。
可以在第一晶圆310上形成第一管芯密封环315。可以在第一晶圆310上形成第一晶圆密封环317。第一晶圆密封环317(如图3A所示)示出两个密封环仅用于说明的目的。在各种实施例中,可以在第一晶圆310上形成更多或更少的晶圆密封环。可以在第一晶圆上形成一个或多个测试焊盘316,其可以连接至在第一晶圆310内形成的电子器件(未示出)。
可以以可以实现使用共晶接合工艺进行晶圆接合的方式来形成(一个或多个)第一晶圆密封环317(如图3A所示)。在这样的实施例中,第一晶圆密封环317和/或第一管芯密封环315可以由一个或多个金属层形成,包括但不限于诸如AlCu、AlGe的共晶合金或者诸如In、Au、Sn、Cu或者其他类似材料的低熔点金属层。(一个或多个)第一晶圆密封环317可以形成为具有高度H1SR和大致均匀的宽度W1SR。第一管芯密封环315可以形成为具有高度H1DS和宽度W1DS。
(一个或多个)第一晶圆密封环317的高度H1SR可以形成为约等于第一管芯密封环315的高度H1DS。第一晶圆密封环317的宽度W1SR可以形成为根据形成第一晶圆密封环317的设计者、设计准则和/或设备限制确定的宽度。例如,宽度W1SR可以与其中可以形成(一个或多个)第一晶圆密封环317的第一晶圆310的有效面积相关。虽然对于每一个第一晶圆密封环317宽度W1SR可以是大致均匀的,但是在各种实施例中,每一个环的个体均匀宽度可以不同于或者约等于第一晶圆310上的另一晶圆密封环的宽度。在不意为限制本文所描述的实施例的示例性实例中,(一个或多个)第一晶圆密封环317的宽度W1SR可以在约30μm至约80μm的范围内。
在各种实施例中,第一电子器件层313可以包括金属层、介电层或半导体材料层。对于金属层来说,铜、铝、金或者其他类似的材料可以用在第一电子器件层313中。对于介电层来说,诸如氧化物、氮化物、氧化硅、氮化硅的一种或多种介电材料、诸如碳掺杂的氧化物的低k电介质、诸如多孔碳掺杂的二氧化硅的极低k电介质、诸如聚酰亚胺的聚合物或者它们的组合可以用在第一电子器件层313中。对于半导体材料层来说,硅、石英、陶瓷、绝缘体上硅(“SOI”)、梯度材料、混合取向材料或者其他材料可以用在第一电子器件层313中。
在各种实施例中,第一电子器件层313还可以包括其中形成的有源和/或无源电子器件(未示出),诸如晶体管、电容器、电阻器、它们的组合等。在各种实施例中,第一电子器件层313还可以包括腔313a,其中MEMS电子器件(未示出)可以形成在第一管芯密封环315之间的区域中。例如,MEMS电子器件可以是用于在传感器、陀螺仪、加速计、RF晶圆或者光学晶圆中执行功能的振动体、弹性绳或者线圈。在示例性实例中,如图3A和图3C所示,第一晶圆310可以包括其中可以形成MEMS电子器件(未示出)的开口腔313a。MEMS电子器件可以包括位于腔内的活动元件(未示出)。
在一个实施例中,第一互连件312可以相互独立地由铜、铝、金或者其他类似的材料形成,以便在第一电子器件层313中形成的电子器件之间提供导电通路。举例来说,可以通过诸如CVD、PVD、电化学镀、一个或多个金属蚀刻(subtractive etch)工艺、单镶嵌技术和/或双镶嵌技术等或者其他可接受的方法来形成第一互连件312。在各种实施例中,第一电子器件层313和/或第一互连件312可以用于在第一晶圆310内形成再分配层(“RDL”)(未示出)。可以使用合适的工艺(诸如以上所述的那些工艺)来形成RDL。
在各种实施例中,测试焊盘316可以由一个或多个金属层形成,包括但不限于诸如AlCu、AlGe等的共晶合金或者诸如In、Au、Sn、Cu或者其他类似的材料的低熔点金属层。在一个实施例中,第一衬底311可以包括块状硅。在其他实施例中,第一衬底311可以包括任何半导体衬底、陶瓷衬底、石英衬底等。可以使用的其他衬底包括多层衬底、梯度衬底或者混合取向衬底。
如图3B所示,可以提供第二晶圆320。图3B中仅示出第二晶圆320的一部分。第二晶圆320可以包括第二衬底321。第二晶圆320还可以包括第二电子器件层和第二互连件(全都未示出)。
第二晶圆320可以具有在其上形成的第二管芯密封环325。第二晶圆320还可以具有在其上形成的第二晶圆密封环327。第二晶圆密封环327(如图3B所示)示出位于第二晶圆320上的两个密封环,仅用于说明目的。在各种实施例中,可以在第二晶圆320上形成更多或更少的晶圆密封环。图3B和图3C中仅示出第二晶圆320的一部分。
可以以可以实现使用共晶接合工艺进行晶圆接合工艺的方式来形成(一个或多个)第二晶圆密封环327(如图3B所示)。在这样的实施例中,第二晶圆密封环327和/或第二管芯密封环可以由一个或多个金属层形成,包括但不限于诸如AlCu、AlGe的共晶合金或者诸如In、Au、Sn、Cu或其他类似的材料的低熔点金属层。(一个或多个)第二晶圆密封环327可以形成为具有高度H2SR和大致均匀的宽度W2SR。第二管芯密封环325可以形成为具有高度H2DS和宽度W2DS。
(一个或多个)第二晶圆密封环327的高度H2SR可以形成为约等于第二管芯密封环325的高度H2DS。第二晶圆密封环327可以形成为与对应的第一晶圆密封环317对准并且具有大致相同的宽度W2SR,这可以促进第一晶圆密封环317和第二晶圆密封环327的接合和密封。在各种实施例中,第一晶圆密封环317的高度H1SR、第一管芯密封环315的高度H1DS、第二晶圆密封环327的高度H2SR和/或第二管芯密封环325的高度H2DS可以形成为高度在约至约的范围内。
在一个实施例中,第二晶圆320可以形成为其中没有形成电子器件的操作晶圆。在一个实施例中,第二晶圆320可以形成为其中具有无源、有源和/或MEMS电子器件。电子器件、连接和/或层的包括或排除预期并不意为对第二晶圆320的具体限制。
考虑到如图3A-图3B中示出的第一晶圆310和第二晶圆320的局部截面图,没有完全示出第一晶圆密封环317和第二晶圆密封环327的整体形状。然而,应该理解,可以以一定的方式形成第一晶圆密封环317和第二晶圆密封环327以在管芯密封环315、325和相应的第一晶圆310、第二晶圆320的外侧边缘之间围绕对应的第一管芯密封环315和第二管芯密封环325。如同本文所论述的各种实施例所描述的,第一晶圆密封环317和第二晶圆密封环327的形状可以变化。
如图3C所示,可以将第一晶圆310和第二晶圆320对准并接合在一起以形成接合结构330。对于接合结构330,第一晶圆310的第一晶圆密封环317可以接合至第二晶圆320的对应的第二晶圆密封环327以形成密封环结构340。第一晶圆310的第一管芯密封环315可以接合至第二晶圆320的对应的第二管芯密封环325以形成管芯密封环结构350。
举例来说,可以将如图3C所示的第一晶圆310和第二晶圆320对准并使用共晶接合工艺接合。在各种实施例中,可以对第一晶圆310和/或第二晶圆320施加压力和/或热量以形成接合结构330。在一个实施例中,例如,可以施加热量至温度在约100℃至约500℃的范围内。在一个实施例中,例如,压力可以在约10KN至约100KN的范围内。例如,对于Al-Ge接合工艺,温度可以在约420℃至约450℃的范围内并且压力可以在约30KN至约55KN的范围内。
在共晶接合工艺之后,密封环结构340可以在第一晶圆310和第二晶圆320之间提供气密式密封,这可以在对接合结构330实施的后续接合后加工期间保护测试焊盘316、第一管芯密封环315和/或第二管芯密封环325。例如,密封环结构340可以防止湿气、化学物质和/或残留物在后续的制造工艺期间渗入接合结构330。例如,这样的工艺可以包括但不限于化学机械抛光(“CMP”)、研磨、蚀刻、沉积或者其他的制造工艺。
图4A至图4B示出根据一个实施例用于形成晶圆密封环的中间阶段的截面图。如图4A-图4B所示的实施例可以实现使用共晶接合工艺进行晶圆接合。图4A至图4B示出第一晶圆410和第二晶圆420。图4A至图4B中仅示出第一晶圆410和第二晶圆420的一部分。
第一晶圆410可以具有在其上形成的晶圆密封环414,其包括第一结构部分414a和第二结构部分414b。第一晶圆410可以包括第一衬底411。在第一衬底411上可以形成晶圆密封环414的第一结构部分414a。在第一结构部分414a上可以形成第二结构部分414b,其可以例如是用于晶圆密封环414的接合层。
可以在第一晶圆410上形成管芯密封环(未示出)。晶圆密封环414可以形成为总高度HSR约等于管芯密封环(未示出)的高度。晶圆密封环414可以形成为具有大致均匀的宽度WSR。在一个实施例中,可以在第一晶圆410上形成额外的晶圆密封环(未示出)。
第二晶圆420可以包括第二衬底421。在第二晶圆420(如图4A所示)上可以不具有形成的晶圆密封环。可以如图4B所示将第一晶圆410和第二晶圆420对准并接合在一起以形成接合结构440。可以使用各种共晶接合工艺来实施接合。将第一晶圆410和第二晶圆420接合在一起形成接合结构440可以在晶圆之间形成密封环结构430。
在各种实施例中,晶圆密封环414的第一结构部分414a可以由介电材料、金属材料或者半导体材料形成。在各种实施例中,晶圆密封环414的第二结构部分414b可以由包括诸如AlCu、AlGe等的共晶晶合金或者诸如In、Au、Sn、Cu等的低熔点金属层的材料形成。在一个实施例中,第二结构部分414b可以包括多层。
在各种实施例中,第一衬底411和/或第二衬底421可以包括块状硅。在其他实施例中,第一衬底411和/或第二衬底421可以包括任何半导体衬底、陶瓷衬底、石英衬底等。可以使用的其他衬底包括多层衬底、梯度衬底或者混合取向衬底。
图4C至图4D示出根据另一实施例形成晶圆密封环的中间阶段的截面图。如图4C至图4D示出的实施例可以实现使用共晶接合工艺进行晶圆接合。图4C-图4D示出第一晶圆450和第二晶圆460。图4C-图4D中仅示出第一晶圆450和第二晶圆460的一部分。
第一晶圆450可以具有在其上形成的第一晶圆密封环454,其具有第一结构部分454a和第二结构部分454b。第一晶圆450可以包括第一衬底451。在第一衬底451上可以形成第一晶圆密封环454的第一结构部分454a。在第一结构部分454a上可以形成第二结构部分454b,其可以例如是用于第一晶圆密封环454的接合层。
可以在第一晶圆450上形成一个或多个第一管芯密封环(未示出)。第一晶圆密封环454可以形成为总高度H1SR可以约等于一个或多个第一管芯密封环(未示出)的高度。第一晶圆密封环454可以形成为具有大致均匀的宽度W1SR。在一个实施例中,可以在第一晶圆450上形成额外的第一晶圆密封环(未示出)。
第二晶圆460可以具有在其上形成的第二晶圆密封环464,其具有第一结构部分464a和第二结构部分464b。第二晶圆460可以包括第二衬底461。在第二衬底461上可以形成第二晶圆密封环464的第一结构部分464a。在第一结构部分464a上可以形成第二结构部分464b,其可以例如是用于第二晶圆密封环464的接合层。
可以在第二晶圆460上形成一个或多个第二管芯密封环(未示出)。第二晶圆密封环464可以形成为总高度H2SR约等于一个或多个第二管芯密封环(未示出)的高度。第二晶圆密封环464可以形成为具有大致均匀的宽度W2SR。第二晶圆密封环464可以形成为与第一晶圆密封环317对准并且具有大致均匀的宽度W2SR,这可以促进对第一晶圆密封环317和第二晶圆密封环327的接合和密封。在一个实施例中,可以在第二晶圆460上形成额外的第二晶圆密封环(未示出)。
可以如图4D所示将第一晶圆450和第二晶圆460对准并接合在一起以形成接合结构480。可以使用各种共晶接合工艺来实施接合。将第一晶圆450和第二晶圆460接合在一起可以包括将第一晶圆密封环454和第二晶圆密封环464接合在一起,这可以在第一晶圆450和第二晶圆460之间形成密封环结构470。
在各种实施例中,第一晶圆密封环454的第一结构部分454a可以由介电材料、金属材料或者半导体材料形成。在各种实施例中,第一晶圆密封环454的第二结构部分454b可以由包括但不限于诸如AlCu、AlGe等的共晶合金或者诸如In、Au、Sn、Cu等的低熔点金属层形成。在一个实施例中,第二结构部分454b可以包括多层。
在各种实施例中,第二晶圆密封环464的第一结构部分464a可以由介电材料、金属材料或者半导体材料形成。在各种实施例中,第二晶圆密封环464的第二结构部分464b可以由包括但不限于诸如AlCu、AlGe等的共晶合金或者诸如In、Au、Sn、Cu等的低熔点金属层形成。在一个实施例中,第二晶圆密封环464的第二结构部分464b可以包括多层。
在各种实施例中,第一衬底451和/或第二衬底461可以包括块状硅。在其他实施例中,第一衬底451和/或第二衬底461可以包括任何半导体衬底、陶瓷衬底、石英衬底等。可以使用的其他衬底包括多层衬底、梯度衬底或者混合取向衬底。
图5A-图5B示出根据一个实施例形成晶圆密封环的中间阶段的截面图。如图5A-图5B示出的实施例可以实现使用熔融接合工艺进行晶圆接合。图5A-图5B示出第一晶圆510和第二晶圆520。图5A-图5B中仅示出第一晶圆510和第二晶圆520的一部分。可以在第一晶圆510上形成有晶圆密封环514。如图5A-5B所示的晶圆密封环514示出两个密封环。在各种实施例中,可以在第一晶圆510上形成更多或更少的晶圆密封环。
第一晶圆510可以包括第一衬底511。可以在第一晶圆510上形成一个或多个管芯密封环(未示出)。(一个或多个)晶圆密封环514可以形成为高度HSR可以约等于一个或多个管芯密封环(未示出)的高度。晶圆密封环514可以形成为具有大致均匀的宽度WSR。虽然对于每一晶圆密封环514,宽度WSR可以是大致均匀的,但在各种实施例中,每一个环的个体均匀宽度可以不同于或者约等于第一晶圆510上的另一环的宽度。
第二晶圆520可以包括第二衬底521。在第二晶圆520上可以不具有形成的晶圆密封环。可以如图5B所示将第一晶圆510和第二晶圆520对准并接合在一起以形成接合结构540。可以使用各种熔融接合工艺来实施接合。在各种实施例中,可以在约300℃至约1000℃范围内的温度下实施接合后退火,这可以增强接合强度。将第一晶圆510和第二晶圆520接合在一起形成接合结构540可以在第一晶圆510和第二晶圆520之间形成密封环结构530。
在各种实施例中,第一衬底511和/或第二衬底521可以包括块状硅。在其他的实施例中,第一衬底511和/或第二衬底521可以包括任何半导体衬底、陶瓷衬底、石英衬底等。可以使用的其他衬底包括多层衬底、梯度衬底或者混合取向衬底。
在各种实施例中,晶圆密封环514可以由与第一衬底511和/或第二衬底521的材料相同或不同的半导体材料或者衬底材料形成。在各种实施例中,根据设计者的决定,可以在第二晶圆520上而不是在第一晶圆510上形成晶圆密封环514。
图5C-图5D示出根据另一实施例形成晶圆密封环的中间阶段的截面图。如图5C-图5D示出的实施例可以实现使用熔融接合工艺进行晶圆接合。图5C-图5D示出第一晶圆550和第二晶圆560。图5C-图5D中仅示出第一晶圆550和第二晶圆560的一部分。
第一晶圆550可以包括第一衬底551。第一晶圆550可以具有在其上形成的晶圆密封环554。如图5A-5B所示的晶圆密封环554示出两个密封环。在各种实施例中,可以在第一晶圆550上形成更多或更少的晶圆密封环。可以在第一晶圆550上形成一个或多个管芯密封环(未示出)。晶圆密封环554可以形成为高度HSR约等于一个或多个管芯密封环的高度(未示出)。
(一个或多个)晶圆密封环554可以形成为具有大致均匀的宽度WSR。虽然对于每一个晶圆密封环514,宽度WSR可以是大致均匀的,但是在各种实施例中,每一个环的个体均匀宽度可以不同于或者约等于第一晶圆510上的另一环的宽度。
第二晶圆560可以包括第二衬底561和对准柱562。对准柱562可以在晶圆接合期间帮助对准第一晶圆550和第二晶圆560。对准柱562可以形成为具有高度HP,其可以约等于或者小于(一个或多个)晶圆密封环554的高度HSR。可以在第二晶圆560上可以促进与第一晶圆550对准的位置形成对准柱562。例如,可以在第二晶圆560上形成对准柱562(如图5C所示)以在(一个或多个)晶圆密封环554之间对准用于接合第一晶圆550和第二晶圆560。
在各种实施例中,可以形成多个对准柱(未示出)以在晶圆密封环554的相对侧上对准。应该理解,对准柱的使用不限于结合熔融接合工艺的实施例,而且还可以用在结合如上所述的共晶接合工艺的实施例中。
可以如图5D所示将第一晶圆550和第二晶圆560对准并接合在一起以形成接合结构580。可以使用各种熔融接合工艺来实施接合。将第一晶圆550和第二晶圆560接合在一起形成接合结构580可以在第一晶圆550和第二晶圆560之间形成密封环结构570。
在各种实施例中,第一衬底551和/或第二衬底561可以包括块状硅。在其他实施例中,第一衬底551和/或第二衬底561可以包括任何半导体衬底、陶瓷衬底、石英衬底等。可以使用的其他衬底包括多层衬底、梯度衬底或者混合取向衬底。在各种实施例中,晶圆密封环554可以由可以与第一衬底551和/或第二衬底561的材料相同或不同的半导体材料或者衬底材料形成。
在一个实施例中,提供了一种装置。该装置可以包括一对接合晶圆,在至少一个晶圆上形成有多个管芯;多个管芯密封环,其中每一个管芯密封环都围绕多个管芯中的每一个管芯形成;以及位于接合晶圆之间的晶圆密封环,晶圆密封环具有均匀的宽度,其中晶圆密封环形成为围绕多个管芯密封环。晶圆密封环可以形成为高度约等于管芯密封环的高度。
在另一实施例中,提供了另一种装置。该装置可以包括其上形成有多个管芯的晶圆;多个管芯密封环,每一个管芯密封环都围绕多个管芯中的每一个管芯形成;以及晶圆密封环,晶圆密封环具有均匀的宽度,其中晶圆密封环形成为围绕多个管芯。晶圆密封环可以形成为高度约等于管芯密封环的高度。
在又一实施例中,提供了一种方法。该方法可以包括:在晶圆上形成多个管芯;在晶圆上形成多个管芯密封环,每一个管芯密封环都围绕对应的管芯形成;以及在晶圆上形成晶圆密封环,其中晶圆密封环围绕多个管芯并且形成为高度约等于多个管芯密封环的高度。
尽管已经详细地描述了本发明实施例及其优势,但应该理解,可以在不背离所附权利要求限定的本发明的构思和范围的情况下,进行各种改变、替换和更改。例如,本领域技术人员容易理解以上所述的结构和步骤的顺序可以变化而仍保持在本发明的范围内。例如,在任何一个晶圆上形成晶圆密封环都包括在本发明的范围内。
而且,本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员根据本发明应很容易理解,根据本发明可以利用现有的或今后开发的用于执行与本文所述相应实施例基本上相同的功能或者获得基本上相同的结果的工艺、机器、制造、材料组分、装置、方法或步骤。因此,所附权利要求预期在其范围内包括这样的工艺、机器、制造、材料组分、装置、方法或步骤。
Claims (17)
1.一种使用密封环结构的装置,包括:
一对接合晶圆,在所述晶圆中的至少一个晶圆上形成有多个管芯;
多个管芯密封环,其中每一个所述管芯密封环都围绕所述多个管芯中的一个管芯形成;
一对晶圆密封环,位于所述接合晶圆之间,所述晶圆密封环具有均匀的宽度,所述晶圆密封环形成为围绕所述多个管芯密封环;以及
对准柱,位于所述接合晶圆之间,其中所述对准柱都位于所述一对晶圆密封环之间,
其中,所述一对晶圆密封环横向间隔开第一距离,并且所述对准柱的宽度等于所述第一距离。
2.根据权利要求1所述的使用密封环结构的装置,其中,所述晶圆密封环是由半导体材料、共晶材料、介电材料或者它们的组合形成。
3.根据权利要求1所述的使用密封环结构的装置,其中,在所述一对接合晶圆中的至少一个晶圆中形成有MEMS电子器件。
4.根据权利要求1所述的使用密封环结构的装置,其中,所述一对晶圆密封环中的至少一个的高度等于所述多个管芯密封环的高度。
5.根据权利要求1所述的使用密封环结构的装置,其中,所述对准柱的第一高度小于所述一对晶圆密封环中的至少一个的第二高度。
6.根据权利要求1所述的使用密封环结构的装置,其中,所述晶圆密封环具有围绕所述多个管芯的圆形形状。
7.根据权利要求1所述的使用密封环结构的装置,其中,所述晶圆密封环包括围绕所述多个管芯的多个邻接的直线部分。
8.一种使用密封环结构的装置,包括:
晶圆,在所述晶圆上形成有多个管芯;
多个管芯密封环,每一个管芯密封环都围绕所述多个管芯中的一个管芯形成;以及
多个晶圆密封环,被配置为彼此同心,所述晶圆密封环具有均匀的宽度,其中,所述多个晶圆密封环中的每一个形成为围绕所述多个管芯,
对准柱,所述对准柱配置在所述多个晶圆密封环中的两个晶圆密封环之间,
其中,所述两个晶圆密封环横向间隔开第一距离,并且所述对准柱的宽度等于所述第一距离。
9.根据权利要求8所述的使用密封环结构的装置,其中,所述多个晶圆密封环中的至少一个晶圆密封环的高度等于所述多个管芯密封环的高度。
10.根据权利要求8所述的使用密封环结构的装置,其中,所述晶圆密封环具有圆形形状。
11.根据权利要求8所述的使用密封环结构的装置,其中,每一个晶圆密封环包括围绕所述多个管芯的多个邻接的直线部分。
12.根据权利要求8所述的使用密封环结构的装置,其中,所述多个管芯包括在其中形成的MEMS电子器件。
13.根据权利要求8所述的使用密封环结构的装置,其中,至少一个晶圆密封环包括:
第一晶圆密封环结构部分;以及
第二晶圆密封环结构部分,形成在所述第一晶圆密封环结构部分上,其中所述晶圆密封环的总高度等于所述多个管芯密封环的高度。
14.根据权利要求13所述的使用密封环结构的装置,其中,所述晶圆密封环的第二结构部分由共晶合金材料或者低熔点金属材料形成。
15.一种用于密封环结构的方法,包括:
在晶圆上形成多个管芯;
在所述晶圆上形成多个管芯密封环,每一个管芯密封环都围绕对应的管芯形成;以及
在所述晶圆上形成多个晶圆密封环,所述多个晶圆密封环被配置为彼此同心,所述晶圆密封环具有均匀的宽度,其中所述多个晶圆密封环围绕所述多个管芯并且形成为高度等于所述多个管芯密封环的高度,在所述多个晶圆密封环中的两个晶圆密封环之间配置对准柱,其中,所述两个晶圆密封环横向间隔开第一距离,并且所述对准柱的宽度等于所述第一距离。
16.根据权利要求15所述的用于密封环结构的方法,其中,所述多个管芯包括在其中形成的MEMS电子器件。
17.根据权利要求15所述的用于密封环结构的方法,其中,形成所述晶圆密封环包括:
在所述晶圆上形成第一晶圆密封环结构部分;以及
在所述第一晶圆密封环结构部分上形成第二晶圆密封环结构部分。
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