CN103926769A - 一种阵列基板、显示面板及显示器 - Google Patents
一种阵列基板、显示面板及显示器 Download PDFInfo
- Publication number
- CN103926769A CN103926769A CN201310732436.5A CN201310732436A CN103926769A CN 103926769 A CN103926769 A CN 103926769A CN 201310732436 A CN201310732436 A CN 201310732436A CN 103926769 A CN103926769 A CN 103926769A
- Authority
- CN
- China
- Prior art keywords
- auxiliary electrode
- electrode line
- array base
- base palte
- line segment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 title abstract description 15
- 239000012212 insulator Substances 0.000 claims description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 8
- 230000003068 static effect Effects 0.000 abstract description 43
- 230000005611 electricity Effects 0.000 abstract description 24
- 238000000034 method Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 47
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- LGQLWSVDRFRGCP-UHFFFAOYSA-N [Mo].[Nd] Chemical compound [Mo].[Nd] LGQLWSVDRFRGCP-UHFFFAOYSA-N 0.000 description 1
- ZXTFQUMXDQLMBY-UHFFFAOYSA-N alumane;molybdenum Chemical compound [AlH3].[Mo] ZXTFQUMXDQLMBY-UHFFFAOYSA-N 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310732436.5A CN103926769B (zh) | 2013-12-26 | 2013-12-26 | 一种阵列基板、显示面板及显示器 |
US14/285,538 US9281323B2 (en) | 2013-12-26 | 2014-05-22 | Array substrate, display panel and display device |
DE102014108184.6A DE102014108184B4 (de) | 2013-12-26 | 2014-06-11 | Array-Substrat, Anzeigefeld und Display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310732436.5A CN103926769B (zh) | 2013-12-26 | 2013-12-26 | 一种阵列基板、显示面板及显示器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103926769A true CN103926769A (zh) | 2014-07-16 |
CN103926769B CN103926769B (zh) | 2016-08-24 |
Family
ID=51145040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310732436.5A Active CN103926769B (zh) | 2013-12-26 | 2013-12-26 | 一种阵列基板、显示面板及显示器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9281323B2 (zh) |
CN (1) | CN103926769B (zh) |
DE (1) | DE102014108184B4 (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106653772A (zh) * | 2016-12-30 | 2017-05-10 | 惠科股份有限公司 | 一种显示面板及制程 |
CN107025893A (zh) * | 2017-06-02 | 2017-08-08 | 武汉华星光电技术有限公司 | 一种驱动电路及液晶显示装置 |
CN107065339A (zh) * | 2016-10-27 | 2017-08-18 | 厦门天马微电子有限公司 | 一种阵列基板、显示面板及显示装置 |
CN107367876A (zh) * | 2017-08-01 | 2017-11-21 | 深圳市华星光电技术有限公司 | 防静电电路及液晶显示面板 |
CN107527935A (zh) * | 2016-06-16 | 2017-12-29 | 三星显示有限公司 | 显示设备 |
CN110767738A (zh) * | 2019-11-22 | 2020-02-07 | 京东方科技集团股份有限公司 | 显示装置、显示面板及其制造方法 |
CN113284442A (zh) * | 2021-05-26 | 2021-08-20 | 惠科股份有限公司 | 显示面板的测试模组和测试方法 |
CN114446260A (zh) * | 2022-03-24 | 2022-05-06 | 北京京东方显示技术有限公司 | 一种阵列基板及显示装置 |
CN115050754A (zh) * | 2022-06-08 | 2022-09-13 | 湖北长江新型显示产业创新中心有限公司 | 一种显示面板、显示面板的制备方法和显示装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113325642B (zh) * | 2018-06-29 | 2022-12-30 | 上海中航光电子有限公司 | 一种阵列基板、显示面板及显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63265223A (ja) * | 1987-04-23 | 1988-11-01 | Alps Electric Co Ltd | 薄膜トランジスタアレイおよびその製法 |
KR20000045291A (ko) * | 1998-12-30 | 2000-07-15 | 김영환 | 액정 표시 소자 |
US20070272983A1 (en) * | 2006-05-26 | 2007-11-29 | Quanta Display Inc. | Active device array substrate |
CN102543009A (zh) * | 2010-12-27 | 2012-07-04 | 上海天马微电子有限公司 | 一种液晶显示器及其终端设备 |
US20120169986A1 (en) * | 2010-12-30 | 2012-07-05 | Kwon Hokyoon | Liquid crystal display panel |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010058156A (ko) | 1999-12-24 | 2001-07-05 | 박종섭 | 더미 배선을 이용한 정전기 방지 구조를 갖는 액정디스플레이 및 제조방법 |
TWI229440B (en) * | 2003-10-09 | 2005-03-11 | Au Optronics Corp | Electrostatic discharge protection structure |
-
2013
- 2013-12-26 CN CN201310732436.5A patent/CN103926769B/zh active Active
-
2014
- 2014-05-22 US US14/285,538 patent/US9281323B2/en active Active
- 2014-06-11 DE DE102014108184.6A patent/DE102014108184B4/de active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63265223A (ja) * | 1987-04-23 | 1988-11-01 | Alps Electric Co Ltd | 薄膜トランジスタアレイおよびその製法 |
KR20000045291A (ko) * | 1998-12-30 | 2000-07-15 | 김영환 | 액정 표시 소자 |
US20070272983A1 (en) * | 2006-05-26 | 2007-11-29 | Quanta Display Inc. | Active device array substrate |
CN102543009A (zh) * | 2010-12-27 | 2012-07-04 | 上海天马微电子有限公司 | 一种液晶显示器及其终端设备 |
US20120169986A1 (en) * | 2010-12-30 | 2012-07-05 | Kwon Hokyoon | Liquid crystal display panel |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107527935A (zh) * | 2016-06-16 | 2017-12-29 | 三星显示有限公司 | 显示设备 |
CN107065339A (zh) * | 2016-10-27 | 2017-08-18 | 厦门天马微电子有限公司 | 一种阵列基板、显示面板及显示装置 |
CN106653772A (zh) * | 2016-12-30 | 2017-05-10 | 惠科股份有限公司 | 一种显示面板及制程 |
CN106653772B (zh) * | 2016-12-30 | 2019-10-01 | 惠科股份有限公司 | 一种显示面板及制程 |
CN107025893A (zh) * | 2017-06-02 | 2017-08-08 | 武汉华星光电技术有限公司 | 一种驱动电路及液晶显示装置 |
CN107367876A (zh) * | 2017-08-01 | 2017-11-21 | 深圳市华星光电技术有限公司 | 防静电电路及液晶显示面板 |
CN110767738A (zh) * | 2019-11-22 | 2020-02-07 | 京东方科技集团股份有限公司 | 显示装置、显示面板及其制造方法 |
CN110767738B (zh) * | 2019-11-22 | 2021-12-03 | 京东方科技集团股份有限公司 | 显示装置、显示面板及其制造方法 |
CN113284442A (zh) * | 2021-05-26 | 2021-08-20 | 惠科股份有限公司 | 显示面板的测试模组和测试方法 |
CN114446260A (zh) * | 2022-03-24 | 2022-05-06 | 北京京东方显示技术有限公司 | 一种阵列基板及显示装置 |
CN114446260B (zh) * | 2022-03-24 | 2023-08-22 | 北京京东方显示技术有限公司 | 一种阵列基板及显示装置 |
CN115050754A (zh) * | 2022-06-08 | 2022-09-13 | 湖北长江新型显示产业创新中心有限公司 | 一种显示面板、显示面板的制备方法和显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20150187820A1 (en) | 2015-07-02 |
US9281323B2 (en) | 2016-03-08 |
DE102014108184A1 (de) | 2015-07-02 |
CN103926769B (zh) | 2016-08-24 |
DE102014108184B4 (de) | 2020-04-02 |
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Effective date of registration: 20190703 Address after: 518057 Room B01, 4th Floor, Mingrui R&D Building, 009 Nanshi Road, Yuehai Street High-tech Zone, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Feng Cheng Powerise Technology Co. Ltd. Address before: 201201 888 and 889 Huiqing Road, Pudong New Area, Shanghai Co-patentee before: Tianma Microelectronics Co., Ltd. Patentee before: Shanghai Tianma Microelectronics Co., Ltd. |
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Effective date of registration: 20190809 Address after: Room A-430, 4th Floor, Block A, Phase II, Guangxi Huike Science and Technology Co., Ltd., 336 East Extension Line of Beihai Avenue, Beihai Industrial Park, Guangxi Zhuang Autonomous Region Patentee after: Beihai Hui Ke Photoelectric Technology Co., Ltd. Address before: 518057 Room B01, 4th Floor, Mingrui R&D Building, 009 Nanshi Road, Yuehai Street High-tech Zone, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Feng Cheng Powerise Technology Co. Ltd. |
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TR01 | Transfer of patent right |