CN103913961A - Coaxial focus-detecting device based on light beam wavefront modulation - Google Patents
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Abstract
The invention discloses a coaxial focus-detecting device based on light beam wavefront modulation. The device comprises a focus-detecting light source, a focusing lens, a pinhole filter, a light beam collimating lens, a beam splitter prism, a reflecting mirror, a projection objective lens and an imaging CCD (Charge Coupled Device), wherein a focus-detecting light beam is expanded and collimated and then divided into two beams; reference light passes the reflecting mirror and turns back to the surface of the CCD; measurement light penetrates through the projection objective lens and then is reflected to the target surface of the CCD through a silicon wafer. When the silicon wafer is located in a defocusing position, the reference light and the measurement light are interfered to form interference strips; by analyzing phases of the strips, a defocusing amount of the silicon wafer can be obtained. The coaxial focus-detecting device has the advantages of high accuracy, real-time measurement and capability of directly judging whether the silicon wafer defocuses according the shapes of the strips.
Description
Technical field
The present invention relates to a kind of coaxial focusing test device based on Beam Wave-Front modulation, for detection of silicon chip defocusing amount in vertical direction.Belong to high-precision optical fields of measurement.
Background technology
From the commitment of microelectronics industry development, optical lithography is just always as the mainstream technology of making submicron-scale figure and device.Wherein the most popular photoetching method is the optical projection printing photoetching technique based on projection objective.The numerical aperture of at present non-immersion lithographic objective has increased to 0.85, approaches physics limit.Exposure wavelength has shortened to 193nm, if adopt shorter exposure wavelength, needs very complicated short-wavelength light origin system, and corresponding lithographic objective needs the expensive material such as pure quartz and calcium fluoride, and cost is very huge.Therefore in order to improve resolving power under the prerequisite not changing Optical Coatings for Photolithography structure, scientific research personnel has adopted a series of new technology to improve photolithography resolution, and these technology are referred to as wavefront engineering or resolving power enhancing technology.Resolving power enhancing technology mainly contains off-aixs illumination, phase shifting mask technology, optical approach effect alignment technique, pupil filtering technology and polarization imaging control technology.After lithographic line width further shortens, it is that cost increases severely that these resolving power enhancing technology will become the very complicated thing followed.Even if utilize theoretically state-of-the-art resolving power enhancing technology to be also difficult to make lithographic line width to reach 1/4 below illumination wavelengths.Based on this, various countries scientific worker starts sight to be transferred to liquid immersion lithography, between projection objective and the silicon chip that is exposed, fills the liquid of high index of refraction, and the effective wavelength that makes to expose becomes shorter, improves whereby photolithography resolution.Its immersion liquid relates to from deionized water to various organic liquid multiple materials.At present semiconductor manufacturing factory business having started to apply commercial immersed photoetching machine aspect high-end element manufacturing, as (TWINSCAN NXT1950I, NSR-S621D).
Projection lithography is progressively developed into by dry lithography in the process of liquid immersion lithography, and intrinsic trend is that exposure wavelength progressively shortens and the steadily improving of numerical aperture, and realizes whereby the enhancing of photolithography resolution.But always improve when resolving power to sacrifice depth of focus (Depth of Focus) as cost, from depth of focus formula DOF=k by shortening exposure wavelength and increasing numerical aperture
2λ/(NA)
2can find out, along with the shortening of exposure wavelength and the raising of numerical aperture, the depth of focus of projection objective is little by little shortening.
The consistance of defocusing amount control major effect feature (CD Critical Dimension) size, and then directly have influence on the yield rate of alignment success ratio and electronic product.In the various contribution factors of CD error, defocusing amount control is wherein the most outstanding one.In multiple-exposure today prevailing, especially 32nm and the optical lithography with lower node, the high precision of defocusing amount control and defocusing amount, the detection of high real-time become the most important thing in lithography measurements undoubtedly.
Summary of the invention
The technology of the present invention is dealt with problems: overcome the deficiencies in the prior art, a kind of coaxial focusing test device based on Beam Wave-Front modulation is provided, have high precision and measure in real time, and can be directly judge the whether advantage of out of focus of silicon chip according to striped form.
The technology of the present invention solution: the coaxial focusing test device based on Beam Wave-Front modulation adopts measuring beam to carry out focusing test with the method for optical axis " coaxial ", the defocusing amount of silicon chip is modulated to the wavefront variation of measuring beam, finally forms interference fringe on imaging CCD surface.Interference fringe is carried out to Phase-Resolved Analysis and can obtain the defocusing amount of silicon chip at z axle.
Described focusing test device comprises focusing test light source, condenser lens, pinhole filter, light beam collimation lens, Amici prism, catoptron, projection objective and imaging CCD, focusing test light source adopts the HE-NE laser instrument of 632.8nm, through condenser lens, focusing test light beam is converged to its focal position, then condenser lens position of focal plane diameter is that 5 μ m pinhole filters carry out filtering to light beam, light beam is modulated to plane wave with point light source light-emitting form by light beam collimation lens, this plane wave is divided into two bundles by Amici prism, be reference beam and measuring beam, the catoptron reflection that wherein reference beam is tilted through Amici prism arrives imaging CCD target surface with the form of plane wave, the minute surface of catoptron is vertical with xoz face, with z axle angle theta=0.01-0.02rad, measuring beam is arrived silicon chip surface through projection objective after Amici prism reflection, then is seen through the through imaging CCD target surface of projection objective by silicon chip reflection, when silicon chip is during in out of focus position, the measuring beam being reflected by silicon chip is modulated to the spherical wave of dispersing or converging, finally on imaging CCD surface, reference beam and measuring beam interfere and form the interference fringe that comprises defocusing amount α information, obtain silicon chip in the axial defocusing amount of z by interference fringe being carried out to Phase-Resolved Analysis.
Described silicon chip is modulated onto in interference fringe in the axial defocusing amount of z, defocusing amount size directly translates into the phase tranformation of interference fringe, wherein in desirable position of focal plane, striped presents one dimension sine streak, in the time of both forward and reverse directions out of focus, striped bends, and degree of crook is relevant to the defocusing amount of silicon chip with form.
Described by interference fringe being carried out to Phase-Resolved Analysis, to obtain silicon chip be whether to come to determine by the bending of direct observation interference fringe in the axial defocusing amount of z, and the height of having avoided needing in traditional triangle focusing test method measuring silicon chip judges whether out of focus of silicon chip indirectly.
By Fourier transform or wavelet transformation, interference fringe is carried out to Phase-Resolved Analysis, obtain the phase diagram of striped, thereby obtain silicon chip in the axial defocusing amount of z.
The principle of the invention: this device is made up of focusing test light source, condenser lens, pinhole filter, light beam collimation lens, Amici prism, catoptron, projection objective and imaging CCD.Focusing test light source is the laser of 632.8nm, after focusing on beam-expanding collimation, is radiated on Amici prism with the form of plane wave.This plane wave is divided into two bundle plane waves, i.e. reference beam and measuring beam by Amici prism.The plane mirror reflection that reference beam is tilted through Amici prism is gone back to and is reached picture CCD surface, and its transmission direction is tilted, but wavefront is still plane wave.Measuring beam reflects through projection objective through Amici prism and arrives silicon chip surface reflection, and when silicon chip is during in out of focus, measuring beam is modulated to the spherical wave of dispersing or converging.Plane wave and spherical wave meet, and interfere formation interference fringe on CCD surface.The degree of modulation difference of different defocusing amounts to measuring beam wavefront, has therefore also caused the different shape of interference fringe in different out of focus position.A but total corresponding unique fringe distribution of specific defocusing amount.By Fourier transform or wavelet transformation, interference fringe is carried out to Phase-Resolved Analysis, can obtain the phase diagram of striped.Can calculate the defocusing amount of silicon chip in conjunction with interference imaging principle.
The present invention's beneficial effect is compared with prior art: traditional focusing test method adopts trigonometric expression reflection measurement method more, measures the height of silicon chip, indirectly judge silicon chip in z direction whether in out of focus.The present invention adopts a kind of measuring beam and the mode of optical axis " coaxial " to carry out focusing test.The phase place of utilizing out of focus silicon chip, to the modulating action of measuring beam wavefront, defocusing amount is converted into interference fringe changes, and its advantage is high precision and measures in real time, and can be directly judges whether out of focus of silicon chip according to striped form.In addition, the measurement of traditional triangle method is compared, coaxial focusing test method is not subject to the narrow and small working distance impact between projection objective (107) and silicon chip (108), and can be applicable to exist between silicon chip (108) and projection objective (107) focusing test of the immersion lithographic apparatus of immersion liquid, not affected by immersion liquid, avoided in trigonometry focusing test light beam cannot be according to set light path the defect through immersion liquid.
Brief description of the drawings
Fig. 1 is the coaxial focusing test device schematic diagram of Beam Wave-Front modulation of the present invention;
Fig. 2 is the mathematic sign mark figure of focusing test device of the present invention;
Fig. 3 is the aspect graph of interference fringe of the present invention in the time of different defocusing amount; (a) for defocusing amount be the interferogram of-40 μ m; (b) for defocusing amount be the interferogram of-5 μ m; (c) for defocusing amount be the interferogram of 0 μ m; (d) for defocusing amount be the interferogram of 40 μ m.
Fig. 4 is the PHASE DISTRIBUTION figure of interference fringe of the present invention in the time of different defocusing amount; (a) for defocusing amount be the PHASE DISTRIBUTION figure of-40 μ m; (b) for defocusing amount be the PHASE DISTRIBUTION figure of-5 μ m; (c) for defocusing amount be the PHASE DISTRIBUTION figure of 0 μ m; (d) for defocusing amount be the PHASE DISTRIBUTION figure of 40 μ m.
Embodiment
For making object of the present invention, organization plan and beneficial effect more clear, below in conjunction with accompanying drawing, the present invention is described in further details.
As shown in Figure 1, based on the coaxial focusing test device of Beam Wave-Front modulation, this device is made up of focusing test light source 101, condenser lens 102, pinhole filter 103, light beam collimation lens 104, Amici prism 105, catoptron 106, projection objective 107 and imaging CCD109.Wherein condenser lens 102, pinhole filter 103 and light beam collimation lens 104 are combined into a beam-expanding collimation system, and the beam shaping of focusing test light source is become to a branch of plane wave.This plane wave is then divided into two bundles by Amici prism 105, i.e. reference beam 201 and measuring beam 202.Reference beam 201 is reflected by plane mirror 106, incides imaging CCD109 target surface with plane wave form; Measuring beam 202 sees through projection objective 107 and reflects through the silicon chip 108 of out of focus, incides imaging CCD109 target surface with the form of spherical wave.Final two-beam interferes, and forms interference fringe as shown in Figure 3.
As shown in Figure 2: Fig. 2 has carried out mathematics mark to the device schematic diagram of Fig. 1.
The slant plane wave complex amplitude that reference beam 201 forms at imaging CCD109 target surface can represent with following formula.
E
1(x,y)＝Cexp(jkKx)exp(jkZ) (1)
C represents the amplitude of reference beam 201, and k represents wave vector, and K represents the inclination factor of plane mirror 106, and Z represents the coordinate figure of imaging CCD109 at Z axis.
For measuring beam 202, it arrives silicon chip 108 surfaces through projection objective 107, and when the defocusing amount that departs from desirable focal plane when silicon chip 108 is α, measuring beam 202 will meet and A point, as shown in Figure 2.Measuring beam 202 can be regarded as by A point and sends the spherical wave that projects at A '.Its complex amplitude can be expressed as:
B represents the amplitude of measuring beam 202, and l represents the distance of projection objective 107 to CCD109 target surface, and f represents the image space focal length of projection objective 107, and f ' represents the object space focal length of projection objective 107.
Final measuring beam 202 and reference beam 201 meet and interfere on CCD surface, form the interference fringe that has comprised defocusing amount α information.The energy distribution of interference field can be expressed as:
C ', B ' represents respectively the constant part in reference beam 201 and measuring beam 202.
Can show that from formula (3) the coaxial focusing test device based on Beam Wave-Front modulation is modulated to defocusing amount α the PHASE DISTRIBUTION of interference fringe.The size variation of defocusing amount α can cause the phase place of interference fringe to change accordingly, and in α=0, desirable position of focal plane, striped shows as one dimension sine streak; In the time that defocusing amount α is not equal to 0, interference fringe is bending by sending according to the size of defocusing amount.
Fig. 3 is described is according to (3) one groups of emulation interference images of formula.From Fig. 3 (a)-(d) silicon chip 108 defocusing amounts are respectively-40 μ m ,-5 μ m, 0 μ m, 40 μ m.When silicon chip 108 defocusing amounts are when larger, (a) from Fig. 3 and (d) in can find out that aggressive bend has occurred interference fringe, be rendered as the closed striped of ring by ring.And silicon chip 108 defocusing amounts are while reducing, (b) from Fig. 3 can find out that interference fringe degree of crook reduces, and closed striped disappears.When silicon chip 108 is during in desirable position of focal plane, interference fringe is rendered as one group of sinusoidal vertical bar line.In a word, a specific defocusing amount is corresponding to a unique striped form.
As can be drawn from Figure 3, when silicon chip during in out-of-focus appearance ((a) in Fig. 3, (b) and (d)) striped is bending, striped in the time of position of focal plane (in Fig. 3 (c)) is straight.Therefore whether whether silicon chip can come to determine by the bending of direct observation interference fringe in out of focus.
Described in Fig. 4 is the phase diagram of the interference fringe of one group of different defocusing amounts position, wherein (a) for defocusing amount be the PHASE DISTRIBUTION figure of-40 μ m; (b) for defocusing amount be the PHASE DISTRIBUTION figure of-5 μ m; (c) for defocusing amount be the PHASE DISTRIBUTION figure of 0 μ m; (d) for defocusing amount be the PHASE DISTRIBUTION figure of 40 μ m.Its silicon chip 108 defocusing amounts corresponding with Fig. 3 are respectively-40 μ m ,-5 μ m, 0 μ m, 40 μ m.These phase diagrams can carry out wavelet transformation and Fourier transform obtains by the interference fringe in Fig. 3.By pointing out and obtain a defocusing amount in each pixel in phase value substitution formula (3) in Fig. 4, finally average and can obtain the defocusing amount of silicon chip.
Claims (4)
1. the coaxial focusing test device based on Beam Wave-Front modulation, is characterized in that: described focusing test device comprises focusing test light source (101), condenser lens (102), pinhole filter (103), light beam collimation lens (104), Amici prism (105), catoptron (106), projection objective (107) and imaging CCD (109), focusing test light source (101) adopts the HE-NE laser instrument of 632.8nm, through condenser lens (102), focusing test light beam is converged to its focal position, then condenser lens (102) position of focal plane employing diameter is that 5 μ m pinhole filters (103) carry out filtering to light beam, light beam is modulated to plane wave with point light source light-emitting form by light beam collimation lens (104), this plane wave is divided into two bundles by Amici prism (105), be reference beam (201) and measuring beam (202), catoptron (106) reflection that wherein reference beam (201) is tilted through Amici prism (105) arrives imaging CCD (109) target surface with the form of plane wave, the minute surface of catoptron (106) is vertical with xoz face, with z axle angle theta=0.01-0.02rad, measuring beam (202) is arrived silicon chip (108) surface through projection objective (107) after Amici prism (105) reflection, then is seen through through imaging CCD (109) target surface of projection objective (107) by silicon chip (108) reflection, when silicon chip is during in out of focus position (108 '), measuring beam (202) by silicon chip (108) reflection is modulated to the spherical wave of dispersing or converging, finally on imaging CCD (109) surface, reference beam (201) and measuring beam (202) interfere and form the interference fringe that comprises defocusing amount α information, obtain silicon chip (108) in the axial defocusing amount of z by interference fringe being carried out to Phase-Resolved Analysis.
2. a kind of coaxial focusing test device based on Beam Wave-Front modulation according to claim 1, it is characterized in that: described silicon chip (108) is modulated onto in interference fringe in the axial defocusing amount of z, defocusing amount size directly translates into the phase tranformation of interference fringe, wherein in desirable position of focal plane, striped presents one dimension sine streak, in the time of both forward and reverse directions out of focus, striped bends, and degree of crook is relevant to the defocusing amount of silicon chip (108) with form.
3. a kind of coaxial focusing test device based on Beam Wave-Front modulation according to claim 1, it is characterized in that: described by interference fringe being carried out to Phase-Resolved Analysis, to obtain silicon chip (108) be whether to come to determine by the bending of direct observation interference fringe in the axial defocusing amount of z, the height of having avoided needing in traditional triangle focusing test method measuring silicon chip judges whether out of focus of silicon chip indirectly.
4. a kind of coaxial focusing test device based on Beam Wave-Front modulation according to claim 1, it is characterized in that: describedly obtain silicon chip (108) and adopt Fourier transform or small wave converting method when the axial defocusing amount of z by interference fringe being carried out to Phase-Resolved Analysis, by this stripe pattern is carried out to Phase-Resolved Analysis, obtain PHASE DISTRIBUTION figure, then draw defocusing amount α according to formula (3):
C ', B ' represents respectively the constant part in reference beam (201) and measuring beam (202);
E
1(x,y)＝Cexp(jkKx)exp(jkZ) (1)
E
1represent the slant plane wave complex amplitude that reference beam (201) forms at imaging CCD (109) target surface;
C represents the amplitude of reference beam (201), and k represents wave vector, and K represents the inclination factor of plane mirror (106), and Z represents the coordinate figure of imaging CCD (109) at Z axis;
E
2expression measuring beam (202) is regarded the complex amplitude that is sent the spherical wave that projects at A ' by A point as:
B represents the amplitude of measuring beam (202), l represents the distance of projection objective (107) to CCD (109) target surface, f represents the image space focal length of projection objective (107), and f ' represents the object space focal length of projection objective (107)
Show that by formula (3) the coaxial focusing test device based on Beam Wave-Front modulation is modulated to defocusing amount α the PHASE DISTRIBUTION of interference fringe.
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| CN108801606A (en) * | 2018-08-03 | 2018-11-13 | 南京理工大学 | A kind of lens refractive power measuring device and method based on fiber optic interferometric projection |
| CN109975820A (en) * | 2019-02-25 | 2019-07-05 | 南京理工大学 | Synchronization polarization phase-shifting focus detection system based on Linnik type interference microscope |
| CN110262057A (en) * | 2019-06-14 | 2019-09-20 | 北京全欧光学检测仪器有限公司 | A kind of lens assembling device and method, electronic equipment, computer-readable medium |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292203A (en) * | 2015-05-24 | 2017-01-04 | 上海微电子装备有限公司 | A kind of automatic focusing to Barebone and alignment methods |
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| CN110262057A (en) * | 2019-06-14 | 2019-09-20 | 北京全欧光学检测仪器有限公司 | A kind of lens assembling device and method, electronic equipment, computer-readable medium |
| CN112629680A (en) * | 2020-12-07 | 2021-04-09 | 中国科学院长春光学精密机械与物理研究所 | Aviation camera focus detection device and method based on shack-Hartmann wavefront sensing |
| CN112629680B (en) * | 2020-12-07 | 2022-04-08 | 中国科学院长春光学精密机械与物理研究所 | Aviation camera focus detection device and method based on shack-Hartmann wavefront sensing |
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Application publication date: 20140709 |