CN103911665A - 采用镀碳石英坩埚制备碲锌镉晶体过程中的除杂方法 - Google Patents
采用镀碳石英坩埚制备碲锌镉晶体过程中的除杂方法 Download PDFInfo
- Publication number
- CN103911665A CN103911665A CN201310006633.9A CN201310006633A CN103911665A CN 103911665 A CN103911665 A CN 103911665A CN 201310006633 A CN201310006633 A CN 201310006633A CN 103911665 A CN103911665 A CN 103911665A
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- CN
- China
- Prior art keywords
- tellurium
- cadmium
- quartz crucible
- deionized water
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052793 cadmium Inorganic materials 0.000 title claims abstract description 72
- 239000010453 quartz Substances 0.000 title claims abstract description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 239000012535 impurity Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000013078 crystal Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 97
- 239000008367 deionised water Substances 0.000 claims abstract description 42
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 42
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 36
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 34
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 34
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 34
- 239000011701 zinc Substances 0.000 claims abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 238000002791 soaking Methods 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 57
- 229910052799 carbon Inorganic materials 0.000 claims description 57
- 238000007747 plating Methods 0.000 claims description 39
- 238000001291 vacuum drying Methods 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 5
- 238000006396 nitration reaction Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 abstract description 4
- 238000001035 drying Methods 0.000 abstract 3
- 238000005406 washing Methods 0.000 abstract 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000008187 granular material Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
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CN201310006633.9A CN103911665B (zh) | 2013-01-08 | 2013-01-08 | 采用镀碳石英坩埚制备碲锌镉晶体过程中的除杂方法 |
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CN201310006633.9A CN103911665B (zh) | 2013-01-08 | 2013-01-08 | 采用镀碳石英坩埚制备碲锌镉晶体过程中的除杂方法 |
Publications (2)
Publication Number | Publication Date |
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CN103911665A true CN103911665A (zh) | 2014-07-09 |
CN103911665B CN103911665B (zh) | 2016-03-09 |
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CN201310006633.9A Active CN103911665B (zh) | 2013-01-08 | 2013-01-08 | 采用镀碳石英坩埚制备碲锌镉晶体过程中的除杂方法 |
Country Status (1)
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CN (1) | CN103911665B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113957543A (zh) * | 2021-10-22 | 2022-01-21 | 广东先导微电子科技有限公司 | 一种去除超高纯碲表面杂质的方法 |
CN114775060A (zh) * | 2022-04-18 | 2022-07-22 | 安徽承禹半导体材料科技有限公司 | 一种碲锌镉晶片制备的除杂方法 |
CN115386963A (zh) * | 2022-08-04 | 2022-11-25 | 安徽承禹半导体材料科技有限公司 | 一种制备碲锌镉晶体过程中的除杂方法及除杂装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08109094A (ja) * | 1994-10-07 | 1996-04-30 | Japan Energy Corp | 化合物半導体単結晶の製造方法 |
CN2313933Y (zh) * | 1997-11-18 | 1999-04-14 | 中国科学院上海技术物理研究所 | 一种石英坩埚 |
CN1824850A (zh) * | 2005-02-25 | 2006-08-30 | 昆明物理研究所 | 一种新的生长碲锌镉晶体技术 |
CN1962933A (zh) * | 2006-10-23 | 2007-05-16 | 四川大学 | 晶体生长的石英坩埚镀碳膜方法与装置 |
WO2007064247A2 (fr) * | 2005-12-01 | 2007-06-07 | Spp 'thermo A' Ltd. | Procede de croissance de cd1-xznxte, ou 0$m(f)x$m(f)1 |
CN101092748A (zh) * | 2007-06-05 | 2007-12-26 | 西北工业大学 | 制备大体积碲锌镉单晶的方法 |
CN101397651A (zh) * | 2008-10-30 | 2009-04-01 | 上海大学 | 一种CdZnTe晶体生长用石英安瓿内壁镀覆碳膜的方法及其装置 |
-
2013
- 2013-01-08 CN CN201310006633.9A patent/CN103911665B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08109094A (ja) * | 1994-10-07 | 1996-04-30 | Japan Energy Corp | 化合物半導体単結晶の製造方法 |
CN2313933Y (zh) * | 1997-11-18 | 1999-04-14 | 中国科学院上海技术物理研究所 | 一种石英坩埚 |
CN1824850A (zh) * | 2005-02-25 | 2006-08-30 | 昆明物理研究所 | 一种新的生长碲锌镉晶体技术 |
WO2007064247A2 (fr) * | 2005-12-01 | 2007-06-07 | Spp 'thermo A' Ltd. | Procede de croissance de cd1-xznxte, ou 0$m(f)x$m(f)1 |
CN1962933A (zh) * | 2006-10-23 | 2007-05-16 | 四川大学 | 晶体生长的石英坩埚镀碳膜方法与装置 |
CN101092748A (zh) * | 2007-06-05 | 2007-12-26 | 西北工业大学 | 制备大体积碲锌镉单晶的方法 |
CN101397651A (zh) * | 2008-10-30 | 2009-04-01 | 上海大学 | 一种CdZnTe晶体生长用石英安瓿内壁镀覆碳膜的方法及其装置 |
Non-Patent Citations (1)
Title |
---|
方军等: "Cdo.80 Zn0.20 Te晶体的生长及性能研究", 《人工晶体学报》, vol. 36, no. 6, 15 December 2007 (2007-12-15), pages 1293 - 1296 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113957543A (zh) * | 2021-10-22 | 2022-01-21 | 广东先导微电子科技有限公司 | 一种去除超高纯碲表面杂质的方法 |
CN114775060A (zh) * | 2022-04-18 | 2022-07-22 | 安徽承禹半导体材料科技有限公司 | 一种碲锌镉晶片制备的除杂方法 |
CN115386963A (zh) * | 2022-08-04 | 2022-11-25 | 安徽承禹半导体材料科技有限公司 | 一种制备碲锌镉晶体过程中的除杂方法及除杂装置 |
CN115386963B (zh) * | 2022-08-04 | 2024-02-13 | 安徽承禹半导体材料科技有限公司 | 一种制备碲锌镉晶体过程中的除杂方法及除杂装置 |
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CN103911665B (zh) | 2016-03-09 |
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Effective date of registration: 20181116 Address after: 511500 Tellurium Chemical Workshop of Guangdong Pioneer Rare Materials Co., Ltd., Heyun Town, Qingxin District, Qingyuan City, Guangdong Province Patentee after: Guangdong Pioneer Precious Metals Material Co.,Ltd. Address before: 511500 Industrial Zone, wo Yun town, Qingxin County, Qingyuan, Guangdong (beside the fish dam road) Patentee before: FIRST RARE MATERIALS Co.,Ltd. |
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Effective date of registration: 20190528 Address after: 511517 Qingyuan 27-9 high tech Industrial Park, Guangdong Patentee after: FIRST RARE MATERIALS Co.,Ltd. Address before: 511500 Tellurium Chemical Workshop of Guangdong Pioneer Rare Materials Co., Ltd., Heyun Town, Qingxin District, Qingyuan City, Guangdong Province Patentee before: Guangdong Pioneer Precious Metals Material Co.,Ltd. |
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Effective date of registration: 20241009 Address after: Room 325, Block A, Building 1, No. 6 Kaixuan South Road, Quzhou City, Zhejiang Province, China 324002 Patentee after: Zhejiang Pioneer Medical Technology Co.,Ltd. Country or region after: China Address before: 511517 Qingyuan 27-9 high tech Industrial Park, Guangdong Patentee before: FIRST RARE MATERIALS Co.,Ltd. Country or region before: China |