CN103901698A - 一种在铁电晶体材料极化过程中压制反转畴域侧向生长的电极结构制作方法 - Google Patents
一种在铁电晶体材料极化过程中压制反转畴域侧向生长的电极结构制作方法 Download PDFInfo
- Publication number
- CN103901698A CN103901698A CN201410068517.4A CN201410068517A CN103901698A CN 103901698 A CN103901698 A CN 103901698A CN 201410068517 A CN201410068517 A CN 201410068517A CN 103901698 A CN103901698 A CN 103901698A
- Authority
- CN
- China
- Prior art keywords
- electrode
- ferroelectric crystal
- crystal material
- electrode structure
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 77
- 239000000463 material Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000010287 polarization Effects 0.000 title claims abstract description 25
- 230000008569 process Effects 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 12
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 12
- 230000001939 inductive effect Effects 0.000 claims description 11
- 230000000737 periodic effect Effects 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 8
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 5
- 229910001416 lithium ion Inorganic materials 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- DJHGAFSJWGLOIV-UHFFFAOYSA-N Arsenic acid Chemical compound O[As](O)(O)=O DJHGAFSJWGLOIV-UHFFFAOYSA-N 0.000 claims description 3
- 239000005711 Benzoic acid Substances 0.000 claims description 3
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 claims description 3
- 229940000488 arsenic acid Drugs 0.000 claims description 3
- 235000010233 benzoic acid Nutrition 0.000 claims description 3
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims description 3
- COQAIRYMVBNUKQ-UHFFFAOYSA-J magnesium;barium(2+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Mg+2].[Ba+2] COQAIRYMVBNUKQ-UHFFFAOYSA-J 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 235000010333 potassium nitrate Nutrition 0.000 claims description 3
- 239000004323 potassium nitrate Substances 0.000 claims description 3
- 229940005657 pyrophosphoric acid Drugs 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract 2
- 229910012463 LiTaO3 Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000009605 growth rhythm Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008771 sex reversal Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410068517.4A CN103901698B (zh) | 2014-02-27 | 2014-02-27 | 一种在铁电晶体材料极化过程中压制反转畴域侧向生长的电极结构制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410068517.4A CN103901698B (zh) | 2014-02-27 | 2014-02-27 | 一种在铁电晶体材料极化过程中压制反转畴域侧向生长的电极结构制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103901698A true CN103901698A (zh) | 2014-07-02 |
CN103901698B CN103901698B (zh) | 2017-03-08 |
Family
ID=50993113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410068517.4A Active CN103901698B (zh) | 2014-02-27 | 2014-02-27 | 一种在铁电晶体材料极化过程中压制反转畴域侧向生长的电极结构制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103901698B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106283194A (zh) * | 2016-08-29 | 2017-01-04 | 南开大学 | 一种铌酸锂晶体纳米畴结构的制备装置及方法 |
CN110318098A (zh) * | 2019-07-30 | 2019-10-11 | 江西匀晶光电技术有限公司 | 一种带有人工畴构造的声表面波器件用的基片及其制备方法 |
CN111025432A (zh) * | 2019-12-31 | 2020-04-17 | 南京南智先进光电集成技术研究院有限公司 | 一种制备周期性光学超晶格的方法 |
CN112195520A (zh) * | 2020-09-30 | 2021-01-08 | 南京南智先进光电集成技术研究院有限公司 | 铌酸锂薄膜超晶格的制备方法 |
CN112309946A (zh) * | 2019-07-29 | 2021-02-02 | 复旦大学 | 一种剥离铁电单晶薄膜的方法 |
CN113640915A (zh) * | 2021-08-20 | 2021-11-12 | 南京南智先进光电集成技术研究院有限公司 | 一种小周期z切压电晶片、薄膜、波导及其制备方法 |
CN115116829A (zh) * | 2022-08-29 | 2022-09-27 | 中北大学 | 一种铌酸锂单晶薄膜畴壁增强力电耦合响应器件制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0822042A (ja) * | 1994-07-08 | 1996-01-23 | Sony Corp | 光導波路装置、及び光導波路装置又は光導波路の製造方法 |
JPH08271941A (ja) * | 1995-03-30 | 1996-10-18 | Kyocera Corp | 光デバイスの製造方法 |
CN1434326A (zh) * | 2003-01-28 | 2003-08-06 | 南开大学 | 周期极化掺镁铌酸锂全光开关及其制备工艺 |
JP2010066649A (ja) * | 2008-09-12 | 2010-03-25 | Oki Electric Ind Co Ltd | 波長変換素子及びその製造方法 |
CN103487882A (zh) * | 2013-08-23 | 2014-01-01 | 南京信息工程大学 | 二维质子交换MgO:PPLN脊波导的制备方法 |
-
2014
- 2014-02-27 CN CN201410068517.4A patent/CN103901698B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0822042A (ja) * | 1994-07-08 | 1996-01-23 | Sony Corp | 光導波路装置、及び光導波路装置又は光導波路の製造方法 |
JPH08271941A (ja) * | 1995-03-30 | 1996-10-18 | Kyocera Corp | 光デバイスの製造方法 |
CN1434326A (zh) * | 2003-01-28 | 2003-08-06 | 南开大学 | 周期极化掺镁铌酸锂全光开关及其制备工艺 |
JP2010066649A (ja) * | 2008-09-12 | 2010-03-25 | Oki Electric Ind Co Ltd | 波長変換素子及びその製造方法 |
CN103487882A (zh) * | 2013-08-23 | 2014-01-01 | 南京信息工程大学 | 二维质子交换MgO:PPLN脊波导的制备方法 |
Non-Patent Citations (2)
Title |
---|
D. TULLI · D. JANNER · M. GARCIA-GRANDA · R. RICKEN ·: "Electrode-free optical sensor for high voltage using a domain-inverted LiNbO3 waveguide near cut-off", 《APPL PHYS B》, 26 February 2011 (2011-02-26) * |
S. GRILLI, C. CANALIAS, F. LAURELL, P. FERRARO, AND P. DE NATALE: "Control of lateral domain spreading in congruent lithium niobate by selective proton exchange", 《APPLIED PHYSICS LETTERS》, 18 July 2006 (2006-07-18) * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106283194A (zh) * | 2016-08-29 | 2017-01-04 | 南开大学 | 一种铌酸锂晶体纳米畴结构的制备装置及方法 |
CN106283194B (zh) * | 2016-08-29 | 2018-07-17 | 南开大学 | 一种铌酸锂晶体纳米畴结构的制备装置及方法 |
CN112309946A (zh) * | 2019-07-29 | 2021-02-02 | 复旦大学 | 一种剥离铁电单晶薄膜的方法 |
CN112309946B (zh) * | 2019-07-29 | 2023-07-04 | 复旦大学 | 一种剥离铁电单晶薄膜的方法 |
CN110318098A (zh) * | 2019-07-30 | 2019-10-11 | 江西匀晶光电技术有限公司 | 一种带有人工畴构造的声表面波器件用的基片及其制备方法 |
CN111025432A (zh) * | 2019-12-31 | 2020-04-17 | 南京南智先进光电集成技术研究院有限公司 | 一种制备周期性光学超晶格的方法 |
CN112195520A (zh) * | 2020-09-30 | 2021-01-08 | 南京南智先进光电集成技术研究院有限公司 | 铌酸锂薄膜超晶格的制备方法 |
CN112195520B (zh) * | 2020-09-30 | 2022-03-08 | 南京南智先进光电集成技术研究院有限公司 | 铌酸锂薄膜超晶格的制备方法 |
CN113640915A (zh) * | 2021-08-20 | 2021-11-12 | 南京南智先进光电集成技术研究院有限公司 | 一种小周期z切压电晶片、薄膜、波导及其制备方法 |
CN113640915B (zh) * | 2021-08-20 | 2023-11-14 | 南京南智先进光电集成技术研究院有限公司 | 一种小周期z切压电晶片、薄膜、波导及其制备方法 |
CN115116829A (zh) * | 2022-08-29 | 2022-09-27 | 中北大学 | 一种铌酸锂单晶薄膜畴壁增强力电耦合响应器件制备方法 |
CN115116829B (zh) * | 2022-08-29 | 2022-11-22 | 中北大学 | 一种铌酸锂单晶薄膜畴壁增强力电耦合响应器件制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103901698B (zh) | 2017-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103901698A (zh) | 一种在铁电晶体材料极化过程中压制反转畴域侧向生长的电极结构制作方法 | |
Burns et al. | Second harmonic generation in field poled, quasi-phase-matched, bulk LiNbO/sub 3 | |
US7170671B2 (en) | High efficiency wavelength converters | |
TW548454B (en) | Method of using low voltage to manufacture bulk ferroelectric material reverse region | |
US6654529B1 (en) | Ferroelectric domain inverted waveguide structure and a method for producing a ferroelectric domain inverted waveguide structure | |
US20040192040A1 (en) | Method of fabricating two-dimensional ferroelectric nonlinear crystals with periodically inverted domains | |
CN103901697A (zh) | 一种在铁电晶体材料中制作畴反转光栅的极化电极结构 | |
US20050084199A1 (en) | Ferroelectric substrate period polarization structure manufacturing method | |
Kim et al. | Domain switching characteristics and fabrication of periodically poled potassium niobate for second-harmonic generation | |
JP3213907B2 (ja) | ニオブ酸リチウム単結晶と光機能素子 | |
Choi et al. | Poling quality enhancement of PPLN devices using negative multiple pulse poling method | |
JP5754075B2 (ja) | 波長変換素子の製造方法 | |
Barrett et al. | Novel coercive field engineering technique for improved periodic poling of KTiOPO4 isomorphs | |
JP4764964B2 (ja) | 微小周期分極反転構造形成方法及び微小周期分極反転構造 | |
JP4514146B2 (ja) | 周期分極反転光導波路素子の製造方法 | |
JP2002174832A (ja) | 強誘電体のドメイン反転構造形成方法 | |
JP3683517B2 (ja) | 強誘電体のドメイン反転構造形成方法 | |
Shen et al. | Homogeneous poling of the large-diameter PPLN wafer by means of high-voltage electric pulse triggering | |
JP6019618B2 (ja) | 周期的分極反転構造の形成方法及び波長変換素子の形成方法 | |
Barrett et al. | Novel Coercive Field Engineering Method for Short Period KTiOPO4 | |
JP3398144B2 (ja) | 分極反転領域の製造方法 | |
Peng et al. | Two-dimensional polarization switching of lithium niobate | |
US20090080062A1 (en) | Method for preparing a poled structure by using double-sided electrodes | |
Lallier et al. | Nonlinear Crystals: Quasi-Phase Matched | |
Généreux et al. | Fabrication of periodically poled lithium niobate on x-cut substrates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240122 Address after: Room A713, Building 10, Phase 1, Innovation Park, No. 3 Keji East Road, Shangjie Town, Minhou County, Fuzhou City, Fujian Province, 350100 Patentee after: FUJIAN CAS-CTL PHOTONICS TECH CO.,LTD. Country or region after: China Address before: Fuzhou City, Fujian province 350002 Yangqiao Road No. 155 Patentee before: FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES Country or region before: China |
|
TR01 | Transfer of patent right |