CN103895279B - 镀膜件及其制备方法 - Google Patents

镀膜件及其制备方法 Download PDF

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CN103895279B
CN103895279B CN201210588537.5A CN201210588537A CN103895279B CN 103895279 B CN103895279 B CN 103895279B CN 201210588537 A CN201210588537 A CN 201210588537A CN 103895279 B CN103895279 B CN 103895279B
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film
chromium
color layer
coated part
target
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CN103895279A (zh
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张春杰
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Shenzhen Futaihong Precision Industry Co Ltd
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Priority to TW102102766A priority patent/TW201425625A/zh
Priority to US13/864,647 priority patent/US8697249B1/en
Priority to JP2013271355A priority patent/JP2014129600A/ja
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Abstract

一种镀膜件，其包括基材及色彩层，该镀膜件还包括形成于该基材表面的打底层及形成于该打底层表面的过渡层，该色彩层形成于该过渡层上，该色彩层为铬铝硅层，该色彩层中含有的铬、铝、硅的原子比为1‑3：0.5‑2：0.3‑1；该色彩层呈现的色度区域于CIE LAB表色系统的L*坐标介于25至28，a*坐标介于‑1至‑6，b*坐标介于‑5至‑9。所述镀膜件呈现具有吸引力的金属质感的蓝色外观，提高了镀膜件的外观竞争力。此外，本发明还提供一种所述镀膜件的制备方法。

Description

镀膜件及其制备方法
技术领域
本发明涉及一种镀膜件及其制备方法。
背景技术
随着科技的迅速演进，移动电话、个人计算机等各式电子装置发展迅速，其功能亦愈来愈丰富。为了使电子装置的外壳具有丰富色彩，传统上可利用彩色塑料形成彩色塑料外壳，或藉由喷漆方式在电子装置的壳体表面形成色料层。然而，塑料外壳与喷漆外壳不能呈现良好的金属质感。
发明内容
有鉴于此，有必要提供一种镀膜件，其表面形成有具有金属质感的蓝色的膜层。
另外，还有必要提供一种上述镀膜件的制备方法。
一种镀膜件，其包括基材及色彩层，该镀膜件还包括形成于该基材表面的打底层及形成于该打底层表面的过渡层，该色彩层形成于该过渡层上，该色彩层为铬铝硅层，该色彩层中含有的铬、铝、硅的原子比为1-3：0.5-2：0.3-1；该色彩层呈现的色度区域于CIE LAB表色系统的L*坐标介于25至28，a*坐标介于-1至-6，b*坐标介于-5至-9。
一种镀膜件的制备方法，其包括如下步骤：
提供基材；
在该基材表面形成打底层以及在该打底层表面形成过渡层；
在该基材的过渡层形成色彩层，采用磁控溅射法，使用铬靶、铝靶和硅靶，并通入工作气体氩气，该色彩层为铬铝硅层，该色彩层中含有的铬、铝、硅的原子比为1-3：0.5-2：0.3-1；该色彩层呈现的色度区域于CIE LAB表色系统的L*坐标介于25至28，a*坐标介于-1至-6，b*坐标介于-5至-9。
所述镀膜件呈现具有吸引力的金属质感的蓝色外观，提高了镀膜件的外观竞争力。
附图说明
图1为本发明一较佳实施例的镀膜件的剖视图。
图2为本发明一较佳实施例真空镀膜机的俯视示意图。
主要元件符号说明
镀膜件 10
基材 11
打底层 13
过渡层 15
色彩层 17
真空镀膜机 20
镀膜室 21
铬靶 23
铝靶 24
硅靶 26
轨迹 25
真空泵 30
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
请参阅图1，本发明一较佳实施方式的镀膜件10包括基材11、形成于基材11表面的打底层13、形成于打底层13表面的过渡层15及形成于过渡层表面的色彩层17。
该基材11的材质为不锈钢或铝合金。
该打底层13为金属铬层，其厚度为50-100nm。
该过渡层15为碳化铬或氮化铬层，其厚度为100-200nm。
该色彩层17为铬铝硅层，其厚度为0.3-0.5μm。该色彩层17中含有的铬、铝、硅的原子比为1-3：0.5-2：0.3-1。所述色彩层17呈现的色度区域于CIE LAB表色系统的L*坐标介于25至28，a*坐标介于-1至-6，b*坐标介于-5至-9。该色彩层17呈现蓝色且具有金属质感。
本发明一较佳实施方式镀膜件10的制备方法，其包括如下步骤：
请参阅图2，提供一真空镀膜机20，该真空镀膜机20包括一镀膜室21及连接于镀膜室21的一真空泵30，真空泵30用以对镀膜室21抽真空。该镀膜室21内设有转架(未图示)、铬靶23、铝靶24和硅靶26。转架带动基材11沿圆形的轨迹25公转，且基材11在沿轨迹25公转时亦自转。
提供基材11，该基材11的材质为不锈钢或铝合金。
对该基材11进行表面预处理。该表面预处理可包括常规的对基材11进行清洗及抛光等步骤。
采用磁控溅射法在经清洗后的基材11的表面溅镀打底层13。溅镀该打底层13在所述真空镀膜机20中进行。将基材11放入镀膜室21内，将该镀膜室21抽真空至1.0×10-3-1.0×10-2Pa。铬靶23使用射频电源，溅镀时，开启铬靶23并设置其功率为5-8kw，通入工作气体氩气，氩气流量为100-200标况毫升每分钟(sccm)，镀膜时镀膜室内的温度为90-110℃，施加于基材11的偏压为-200～-350V，镀膜时间为10-15min。
继续采用磁控溅射法在打底层13的表面溅镀过渡层15。溅镀该过渡层15在所述真空镀膜机20中进行。溅镀时，开启铬靶23并设置其功率为4-6kw，通入工作气体氩气和反应气体乙炔或氮气，氩气流量为120-150sccm，反应气体的流量为30-50sccm，镀膜时镀膜室内的温度为90-105℃，施加于基材11的偏压为-200～-300V，镀膜时间为30-50min。
继续采用磁控溅射法在过渡层15的表面溅镀色彩层17。溅镀该色彩层17在所述真空镀膜机20中进行。铝靶24和硅靶26使用射频电源，溅镀时，开启铬靶23、铝靶24和硅靶26并设置它们的功率分别为3-5kw、2-3kw和1-2kw，通入工作气体氩气，氩气流量为80-120sccm，镀膜时镀膜室21内的温度为80-100℃，施加于基材11的偏压为-150～-250V，镀膜时间为40-60min。
可以理解的，所述镀膜使用的铬靶23、铝靶24和硅靶26也可只使用两种靶材替代(铬、铝、硅三者中的两种所组成的复合靶和铬、铝、硅三者中的另外一种的单独靶)，或是用铬、铝及硅三者的复合靶替代。
下面通过实施例来对本发明进行具体说明。
实施例1
本实施例所使用的基材11的材质为不锈钢316。
溅镀打底层13：铬靶23的功率为5kw，氩气流量为150sccm，镀膜时镀膜室21内的温度为100℃，施加于基材11的偏压为-250V，镀膜时间为12min。
溅镀过渡层15：铬靶23的功率为5kw，氩气流量为125sccm，乙炔的流量为45sccm，镀膜时镀膜室21内的温度为100℃，施加于基材11的偏压为-250V，镀膜时间为40min。
溅镀色彩层17：铬靶23、铝靶24和硅靶26的功率分别为4kw、3kw和1.5kw，氩气流量为110sccm，镀膜时镀膜室21内的温度为85℃，施加于基材11的偏压为-200V，镀膜时间为50min。
所述色彩层17呈现的色度区域于CIE LAB表色系统的L*坐标为26，a*坐标为-4，b*坐标为-5。
实施例2
本实施例所使用的基材11的材质为铝合金6061。
溅镀打底层13：铬靶23的功率为5kw，氩气流量为120sccm，镀膜时镀膜室内的温度为90℃，施加于基材11的偏压为-300V，镀膜时间为12min。
溅镀过渡层15：铬靶23的功率为4kw，氩气流量为120sccm，乙炔的流量为40sccm，镀膜时镀膜室21内的温度为90℃，施加于基材11的偏压为-270V，镀膜时间为35min。
溅镀色彩层17：铬靶23、铝靶24和硅靶26的功率分别为3kw、2kw和1kw，氩气流量为105sccm，镀膜时镀膜室21内的温度为80℃，施加于基材11的偏压为-250V，镀膜时间为45min。
所述色彩层17呈现的色度区域于CIE LAB表色系统的L*坐标为26，a*坐标为-3，b*坐标为-6。
实施例3
本实施例所使用的基材11的材质为不锈钢314。
溅镀打底层13：铬靶23的功率为6kw，氩气流量为135sccm，镀膜时镀膜室内的温度为120℃，施加于基材11的偏压为-350V，镀膜时间为15min。
溅镀过渡层15：铬靶23的功率为6kw，氩气流量为130sccm，乙炔的流量为50sccm，镀膜时镀膜室21内的温度为105℃，施加于基材11的偏压为-250V，镀膜时间为35min。
溅镀色彩层17：铬靶23、铝靶24和硅靶26的功率分别为5kw、3kw和2kw，氩气流量为120sccm，镀膜时镀膜室21内的温度为100℃，施加于基材11的偏压为-230V，镀膜时间为55min。
所述色彩层17呈现的色度区域于CIE LAB表色系统的L*坐标为25，a*坐标为-2，b*坐标为-8。
本发明的镀膜件10通过在基材11的表面依次溅镀打底层13、过渡层15及色彩层17，膜层之间逐层过渡良好，且使所述镀膜件10呈现具有吸引力的金属质感的蓝色外观，提高了镀膜件10的外观竞争力。

Claims (9)

1.一种镀膜件，其包括基材及色彩层，其特征在于：该镀膜件还包括形成于该基材表面的打底层及形成于该打底层表面的过渡层，该色彩层形成于该过渡层上，该色彩层为铬铝硅层，该色彩层中含有的铬、铝、硅的原子比为1-3：0.5-2：0.3-1；该色彩层呈现的色度区域于CIE LAB表色系统的L*坐标介于25至28，a*坐标介于-1至-6，b*坐标介于-5至-9。
2.如权利要求1所述的镀膜件，其特征在于：该打底层为金属铬层，该过渡层为碳化铬或氮化铬层。
3.如权利要求1所述的镀膜件，其特征在于：该打底层的厚度为50-100nm，该过渡层的厚度为100-200nm。
4.如权利要求1所述的镀膜件，其特征在于：该基材的材质为不锈钢或铝合金。
5.如权利要求1所述的镀膜件，其特征在于：该色彩层的厚度为0.3-0.5μm。
6.一种镀膜件的制备方法，其包括如下步骤：
提供基材；
在该基材表面形成打底层以及在该打底层表面形成过渡层；
在该基材的过渡层形成色彩层，采用磁控溅射法，使用铬靶、铝靶和硅靶，并通入工作气体氩气，该色彩层为铬铝硅层，该色彩层中含有的铬、铝、硅的原子比为1-3：0.5-2：0.3-1；该色彩层呈现的色度区域于CIE LAB表色系统的L*坐标介于25至28，a*坐标介于-1至-6，b*坐标介于-5至-9。
7.如权利要求6所述镀膜件的制备方法，其特征在于：制备该色彩层的具体工艺参数为：靶材均使用射频电源，铬靶、铝靶和硅靶的功率分别为3-5kw、2-3kw和1-2kw，氩气流量为80-120sccm，镀膜时镀膜室内的温度为80-100℃，施加于基材的偏压为-150～-250V，镀膜时间为40-60min。
8.如权利要求6所述镀膜件的制备方法，其特征在于：制备该打底层的具体工艺参数为：使用铬靶，铬靶使用射频电源，铬靶的功率为5-8kw，通入工作气体氩气，氩气流量为100-200sccm，镀膜时镀膜室内的温度为90-110℃，施加于基材的偏压为-200～-350V，镀膜时间为10-15min。
9.如权利要求6所述镀膜件的制备方法，其特征在于：制备该过渡层的具体工艺参数为：使用铬靶，铬靶使用射频电源，铬靶的功率为4-6kw，通入工作气体氩气和反应气体乙炔或氮气，氩气流量为120-150sccm，反应气体的流量为30-50sccm，镀膜时镀膜室内的温度为90-105℃，施加于基材的偏压为-200～-300V，镀膜时间为30-50min。
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