TW201326447A - 真空鍍膜件及其製造方法 - Google Patents
真空鍍膜件及其製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 87
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 claims description 43
- 229910003470 tongbaite Inorganic materials 0.000 claims description 43
- 239000011248 coating agent Substances 0.000 claims description 40
- 238000000576 coating method Methods 0.000 claims description 40
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 36
- 238000001771 vacuum deposition Methods 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 28
- 230000007704 transition Effects 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 23
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 22
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- -1 titanium carbides Chemical class 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 2
- 238000003763 carbonization Methods 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 182
- 238000004140 cleaning Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
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Abstract
一種真空鍍膜件,包括基體及形成於基體上的顏色層,該顏色層包括複數第一碳化鉻層及複數第一碳化鈦層,所述複數第一碳化鉻層和複數第一碳化鈦層交替排布,該顏色層呈現的色度區域於CIE LAB表色系統的L*座標為29至35,a*座標為0至2,b*座標為0至2。所述真空鍍膜件呈現出純正的黑色。本發明還提供一種上述真空鍍膜件的製造方法。
Description
本發明涉及一種真空鍍膜件及其製造方法,尤其涉及一種呈現黑色的真空鍍膜件及其製造方法。
真空鍍膜技術係一個非常環保的成膜技術。以真空鍍膜的方式所形成的膜層具有高硬度、高耐磨性、良好的化學穩定性、與基體結合牢固以及亮麗的金屬外觀等優點,因此真空鍍膜在裝飾性表面處理領域的應用越來越廣。但真空鍍膜技術亦具有一定的局限性,在製造純黑色膜層過程中容易出現異色、黑中帶藍或黑中帶紅等現象,如此嚴重影響了黑色膜層的美觀。目前已見報道的黑色膜層L值(即明度值)最佳只能達到35,為了得到更純的黑色繼續降低膜層的L值存在較大難度。因此,開發一種明度值較低的黑色鍍膜件實為必要。
有鑒於此,提供一種明度值較低的黑色的真空鍍膜件。
另外,還提供一種上述真空鍍膜件的製造方法。
一種真空鍍膜件,包括基體及形成於基體上的顏色層,該顏色層包括複數第一碳化鉻層及複數第一碳化鈦層,所述複數第一碳化鉻層和複數第一碳化鈦層交替排布,該顏色層呈現的色度區域於CIE LAB表色系統的L*座標為29至35,a*座標為0至2,b*座標為0至2。
一種真空鍍膜件的製造方法,包括以下步驟:
提供基體;
在該基體上以磁控濺射的方式形成顏色層,該顏色層包括複數第一碳化鉻層及複數第一碳化鈦層,所述複數第一碳化鉻層和複數第一碳化鈦層交替排布;濺射時同時開啟鉻靶和鈦靶,並以乙炔為反應氣體,所述顏色層呈現的色度區域於CIE LAB表色系統的L*座標為29至35,a*座標為0至2,b*座標為0至2。
所述真空鍍膜件的製造方法,採用鉻靶與鈦靶為靶材、以乙炔氣體為反應氣體,在基體上交替沉積第一碳化鉻層和第一碳化鈦層,使所述真空鍍膜件呈現出純正的黑色。
請參閱圖1,本發明較佳實施例的真空鍍膜件10包括基體11及形成於基體11上的襯底層13、顏色層19。所述真空鍍膜件10可為電子裝置外殼,亦可為眼鏡邊框、鐘錶外殼、金屬衛浴件及建築用件。
基體11的材質可為金屬、玻璃、陶瓷或塑膠。
所述襯底層13用以增強顏色層19與基體11的附著力。襯底層13可為一鉻層或其他可提供附著效果的塗層。所述襯底層13的厚度為0.05~0.1μm。
所述顏色層19使所述真空鍍膜件10具有純正的黑色裝飾性外觀。所述顏色層19包括複數第一碳化鉻層191及複數第一碳化鈦層193。所述複數第一碳化鉻層191和複數第一碳化鈦層193交替排布。所述顏色層19的最外層為第一碳化鉻層191或第一碳化鈦層193。所述顏色層19的厚度為0.05~0.2μm。所述顏色層19與襯底層13直接結合的為第一碳化鉻層191或第一碳化鈦層193。
所述顏色層19一側呈現的色度區域於CIE LAB表色系統的L*座標為29至35,a*座標為0至2,b*座標為0至2,表現為黑色。
請參見圖2所示,在另一較佳實施例中,為了提高所述襯底層13與顏色層19之間的結合力、降低鍍覆在基體11上膜層之間的內應力,該真空鍍膜件10還可包括在形成顏色層19之前依次形成於該襯底層13上的過渡層15、梯度層17。
所述過渡層15包括複數第二碳化鉻層151及複數第二碳化鈦層153。所述複數第二碳化鉻層151和複數第二碳化鈦層153交替排布。所述過渡層15與襯底層13直接結合的為第二碳化鉻層151。所述過渡層15的最外層為第二碳化鉻層151或第二碳化鈦層153。所述過渡層15的厚度為0.08~0.2μm。
所述梯度層17包括複數第三碳化鉻層171及複數第三碳化鈦層173。所述複數第三碳化鉻層171和複數第三碳化鈦層173交替排布。所述每一第三碳化鉻層171中的C原子的含量不同,每一第三碳化鈦層173中的C原子的含量不同。所述梯度層17中C原子的含量由靠近過渡層15至遠離過渡層15的方向均呈梯度增加。該梯度層17的厚度為0.5~1.2μm。所述梯度層17與過渡層15直接結合的為第三碳化鉻層171或第三碳化鈦層173。所述過渡層15的最外層為第三碳化鉻層171或第三碳化鈦層173。
上述真空鍍膜件10的製造方法主要包括如下步驟:
提供一基體11,並將基體11放入盛裝有乙醇及/或丙酮溶液的超聲波清洗器中進行震動清洗,以除去基體11表面的雜質和油污。清洗完畢後烘乾備用。所述基體11的材質可為金屬、玻璃、陶瓷或塑膠。
對經上述處理後的基體11的表面進行電漿清洗,以進一步去除基體11表面的油污,以及改善基體11表面與後續鍍層的結合力。結合參閱圖2,提供一真空鍍膜機100,該真空鍍膜機100包括一鍍膜室20、連接於鍍膜室20的一真空泵30及一膜厚儀(未圖示)。真空泵30用以對鍍膜室20抽真空。該膜厚儀用以監測鍍鍍膜過程中形成的膜層的厚度。該鍍膜室20內設有轉架(未圖示)、相對設置的二第一靶材22及相對設置的二第二靶材23。轉架帶動基體11沿圓形的軌跡21公轉,且基體11在沿軌跡21公轉時亦自轉。二第一靶材22與二第二靶材23關於軌跡21的中心對稱設置。每一第一靶材22及每一第二靶材23的兩端均設有氣源通道24,氣體經該氣源通道24進入所述鍍膜室20中。其中,所述第一靶材22為鉻靶,所述第二靶材23為鈦靶。
該電漿清洗的具體操作及工藝參數可為:將基體11固定於真空鍍膜機100的鍍膜室20中的轉架上,將該鍍膜室20抽真空至4×10-3~7×10-3Pa,然後向鍍膜室20內通入流量約為250~350sccm(標準狀態毫升/分鐘)的氬氣(純度為99.999%),並施加-800~-1200V的偏壓於基體11,所述偏壓電源功率為6~12kW,對基體11的表面進行電漿清洗,清洗時間為10~30min。
採用磁控濺射鍍膜法,在經電漿清洗後的基體11上濺鍍一襯底層13。濺鍍該襯底層13在所述真空鍍膜機100中進行。開啟第一靶材22,並設定第一靶材22的功率為10~20kw,以氬氣為工作氣體,調節氬氣的流量為150~200sccm,並設置所述轉架的公轉轉速為1~4rpm(revolution per minute,轉/分鐘)。濺鍍時,對基體11施加-50~-200V的偏壓,並加熱所述鍍膜室20至溫度為100~150℃(即鍍膜溫度為100~150℃),鍍膜時間為5~10min。該襯底層13的厚度為0.05~0.1μm。
採用磁控濺射鍍膜法,在所述襯底層13上濺射一顏色層19。所述顏色層19包括複數第一碳化鉻層191及複數第一碳化鈦層193。形成所述顏色層19的方法為:設置乙炔氣體的流量為160~240sccm,同時開啟第一靶材22及第二靶材23,設置第一靶材22的功率為15~20kw、第二靶材23的功率為10~15kw,對基體11施加-100~-200V的偏壓,並加熱所述鍍膜室20至溫度為100~150℃(即鍍膜溫度為100~150℃),沉積該顏色層19時間為5~15min。在沉積所述顏色層19的過程中,當所述基體11在轉架的帶動下經過所述第一靶材22時,於基體11上沉積一第一碳化鉻層191;當所述基體11在轉架的帶動下經過所述第二靶材23時,於基體11上沉積一第一碳化鈦層193;如此在襯底層13上交替沉積複數第一碳化鉻層191和複數第一碳化鈦層193。
所述顏色層19一側呈現的色度區域於CIE LAB表色系統的L*座標為29至35,a*座標為0至2,b*座標為0至2,表現為黑色。
為了提高所述襯底層13與顏色層19之間的結合力、降低鍍覆在基體11上膜層之間的內應力,該真空鍍膜件10的製備方法還可包括在鍍覆該顏色層19之前在該襯底層13上依次真空鍍覆過渡層15、梯度層17的步驟。
所述過渡層15由複數第二碳化鉻層151和複數第二碳化鈦層153交替沉積形成。形成該過渡層15的具體操作方法及工藝參數為:調節氬氣的流量為150~200sccm,並對基體11施加-100~-200V的偏壓,並加熱所述鍍膜室20至溫度為100~150℃(即鍍膜溫度為100~150℃),同時開啟第一靶材22及第二靶材23,設置第一靶材22的功率為15~20kw、第二靶材23的功率為10~15kw,沉積該過渡層15時間為5~10min。在沉積所述過渡層15的過程中,當所述基體11在轉架的帶動下經過所述第一靶材22時,於基體11上沉積一第二碳化鉻層151;當所述基體11在轉架的帶動下經過所述第二靶材23時,於基體11上沉積一第二碳化鈦層153;如此在襯底層13上交替沉積複數第二碳化鉻層151和複數第二碳化鈦層153。
所述梯度層17由複數第三碳化鉻層171和複數第三碳化鈦層173交替沉積形成。形成所述梯度層17的方法為:保持施加於基體11的偏壓、鍍膜溫度不變,以乙炔為反應氣體,向鍍膜室20內通入初始流量為50~110sccm的乙炔氣體,同時開啟第一靶材22及第二靶材23,設置第一靶材22的功率為15~20kw、第二靶材23的功率為10~15kw;沉積所述梯度層17的時間為80~120min,且每沉積4min將乙炔氣體的流量增大0.5~2sccm,沉積該梯度層17的時間為80~120min。在沉積梯度層17的過程中,當所述基體11在轉架的帶動下經過所述第一靶材22時,於基體11上沉積一第三碳化鉻層171;當所述基體11在轉架的帶動下經過所述第二靶材23時,於基體11上沉積一第三碳化鈦層173;如此在過渡層15上交替沉積複數第三碳化鉻層171和複數第三碳化鈦層173。
所述真空鍍膜件10的製造方法,採用鉻靶與鈦靶為靶材、以乙炔氣體為反應氣體,在所述襯底層13上依次沉積過渡層15、梯度層17及顏色層19,最終使所述真空鍍膜件10呈現出純正的黑色。
由於所述梯度層17的硬度遠遠大於所述襯底層13的硬度,而過渡層15的硬度處於上述兩者之間,因此,所述過渡層15的形成可緩解襯底層13與梯度層17之間硬度的急劇增加,從而可減小形成於基體11上各膜層之間介面處的內應力。所述的梯度層17在其與過渡層15的結合處的碳元素濃度較低,具有與過渡層15較相近的熱膨脹係數;而在其與顏色層19的結合處的碳元素濃度較高,具有與顏色層19較相近的熱膨脹係數,因此該過渡層15、梯度層17與顏色層19之間的介面內應力較小。所述各膜層之間介面處內應力減小,使得各膜層之間、各膜層與基體11之間的結合力增強,進而增強所述真空鍍膜件10的耐磨性。
實施例1
濺射襯底層13:
設置第一靶材22的功率為14kw,調節氬氣的流量為150sccm,設置所述轉架的公轉轉速為4rpm。對基體11施加-100V的偏壓,鍍膜溫度為130℃,鍍膜時間為8min。
濺射顏色層19:
設置乙炔氣體的流量為180sccm,同時開啟第一靶材22及第二靶材23,並設置第一靶材22的功率為15kw、第二靶材23的功率為12kw,對基體11施加-100V的偏壓,並加熱所述鍍膜室20至溫度為135℃,沉積時間為10min。
實施例2
濺射襯底層13:
設置第一靶材22的功率為14kw,調節氬氣的流量為150sccm,設置所述轉架的公轉轉速為4rpm。對基體11施加-100V的偏壓,鍍膜溫度為130℃,鍍膜時間為8min。
濺射過渡層15:
調節氬氣的流量為150sccm,設置所述轉架的公轉轉速為4rpm。並對基體11施加-100V的偏壓,同時開啟第一靶材22及第二靶材23,設置第一靶材22的功率為15kw、第二靶材23的功率為12kw,鍍膜溫度為135℃,沉積時間為8min。
濺射梯度層17:
保持施加於基體11的偏壓、鍍膜溫度不變,以乙炔為反應氣體,向鍍膜室20內通入通入初始流量為50sccm的乙炔氣體,同時開啟所述第一靶材22與第二靶材23,並設置第一靶材22的功率為15kw、第二靶材23的功率為12kw,沉積梯度層17。在沉積梯度層17的過程中,每沉積4min將乙炔氣體的流量增大1sccm。沉積該梯度層17的時間為120min。
濺射顏色層19:
設置乙炔氣體的流量為180sccm,同時開啟第一靶材22及第二靶材23,並設置第一靶材22的功率為15kw、第二靶材23的功率為12kw,對基體11施加-100V的偏壓,並加熱所述鍍膜室20至溫度為135℃,沉積時間為10min。
實施例3
濺射襯底層13:
設置第一靶材22的功率為16kw,調節氬氣的流量為180sccm,設置所述轉架的公轉轉速為5rpm。對基體11施加-120V的偏壓,鍍膜溫度為120℃,鍍膜時間為5min。
濺射過渡層15:
調節氬氣的流量為180sccm,設置所述轉架的公轉轉速為5rpm。並對基體11施加-150V的偏壓,同時開啟第一靶材22及第二靶材23,設置第一靶材22的功率為17kw、第二靶材23的功率為13kw,鍍膜溫度為125℃,沉積時間為5min。
濺射梯度層17:
保持施加於基體11的偏壓、鍍膜溫度不變,以乙炔為反應氣體,以乙炔為反應氣體,向鍍膜室20內通入通入初始流量為70sccm的乙炔氣體,同時開啟所述第一靶材22與第二靶材23,並設置第一靶材22的功率為17kw、第二靶材23的功率為13kw,沉積梯度層17。在沉積梯度層17的過程中,每沉積4min將乙炔氣體的流量增大1sccm。沉積該梯度層17的時間為120min。
濺射顏色層19:
設置乙炔氣體的流量為200sccm,同時開啟所述第一靶材22與第二靶材23,設置第一靶材22的功率為17kw、第二靶材23的功率為13kw,對基體11施加-150V的偏壓,並加熱所述鍍膜室20至溫度為125℃,沉積時間為10min。
LAB值測試
實施例1中所述顏色層19一側呈現的色度區域於CIE LAB表色系統的L*座標為30,a*座標為1.5,b*座標為1.0,表現為黑色。
實施例2中所述顏色層19一側呈現的色度區域於CIE LAB表色系統的L*座標為30,a*座標為1.5,b*座標為1.0,表現為黑色。
實施例3中所述顏色層19一側呈現的色度區域於CIE LAB表色系統的L*座標為32,a*座標為1.0,b*座標為1.0,表現為黑色。
可見,經實施例1-3所製得的真空鍍膜層10具有純正的黑色裝飾性外觀。
10...真空鍍膜件
11...基體
13...襯底層
15...過渡層
17...梯度層
19...顏色層
151...第二碳化鉻層
153...第二碳化鈦層
171...第三碳化鉻層
173...第三碳化鈦層
191...第一碳化鉻層
193...第一碳化鈦層
100...鍍膜機
20...鍍膜室
圖1係本發明一較佳實施例真空鍍膜件的剖視圖;
圖2係本發明另一較佳實施例真空鍍膜件的剖視圖;
圖3係本發明一較佳實施例真空鍍膜機的示意圖。
10...真空鍍膜件
11...基體
13...襯底層
19...顏色層
191...第一碳化鉻層
193...第一碳化鈦層
Claims (11)
- 一種真空鍍膜件,包括基體及形成於基體上的顏色層,其改良在於:該顏色層包括複數第一碳化鉻層及複數第一碳化鈦層,所述複數第一碳化鉻層和複數第一碳化鈦層交替排布,該顏色層呈現的色度區域於CIE LAB表色系統的L*座標為29至35,a*座標為0至2,b*座標為0至2。
- 如申請專利範圍第1項所述之真空鍍膜件,其中所述顏色層的厚度為0.05~0.2μm。
- 如申請專利範圍第1項所述之真空鍍膜件,其中該真空鍍膜件還包括形成於基體與顏色層之間的過渡層,所述過渡層包括複數第二碳化鉻層及複數第二碳化鈦層,所述複數第二碳化鉻層和複數第二碳化鉻層交替排布。
- 如申請專利範圍第3項所述之真空鍍膜件,其中所述過渡層的厚度為0.08~0.2μm。
- 如申請專利範圍第1項所述之真空鍍膜件,其中所述真空鍍膜件還包括形成於基體與顏色層之間的梯度層;所述梯度層包括複數第三碳化鉻層及複數第三碳化鈦層,所述複數第三碳化鉻層和複數第三碳化鈦層交替排布,所述每一第三碳化鉻層中的C原子的含量不同,每一第三碳化鈦層中的C原子的含量不同;所述梯度層中C原子的含量由靠近基體至遠離基體的方向均呈梯度增加。
- 如申請專利範圍第5項所述之真空鍍膜件,其中該梯度層的厚度為0.5~1.2μm。
- 如申請專利範圍第1項所述之真空鍍膜件,其中該基體的材質為金屬、玻璃、陶瓷及塑膠中的一種。
- 一種真空鍍膜件的製造方法,包括以下步驟:
提供基體;
在該基體上以磁控濺射的方式形成顏色層,該顏色層包括複數第一碳化鉻層及複數第一碳化鈦層,所述複數第一碳化鉻層和複數第一碳化鈦層交替排布;濺射時同時開啟鉻靶和鈦靶,並以乙炔為反應氣體,所述顏色層呈現的色度區域於CIE LAB表色系統的L*座標為29至35,a*座標為0至2,b*座標為0至2。 - 如申請專利範圍第8項所述之真空鍍膜件的製造方法,其中在形成該顏色層的過程中,乙炔的流量為160~240sccm,設置鉻靶的功率為15~20kw,設置鈦靶的功率為10~15kw,對基體施加-100~-200V的偏壓,鍍膜溫度為100~150℃,鍍膜時間為5~15min。
- 如申請專利範圍第8項所述之真空鍍膜件的製造方法,其中該真空鍍膜件的製造方法還包括在基體與顏色層之間沉積梯度層的步驟,所述梯度層包括複數第三碳化鉻層及複數第三碳化鈦層,所述複數第三碳化鉻層和複數第三碳化鈦層交替排布,所述每一第三碳化鉻層中的C原子的含量不同,每一第三碳化鈦層中的C原子的含量不同;所述梯度層中C原子的含量由靠近基體至遠離基體的方向均呈梯度增加。
- 如申請專利範圍第10項所述之真空鍍膜件的製造方法,其中形成該梯度層的方法為:同時開啟鉻靶和鈦靶,設置鉻靶的功率為15~20kw、鈦靶的功率為10~15kw;設置氬氣的流量為150~200sccm,以乙炔為反應氣體,向鍍膜室內通入通入初始流量為50~110sccm的乙炔氣體,對基體施加-100~-200V的偏壓,並加熱所述鍍膜室至溫度為100~150℃;在沉積梯度層的過程中,每沉積4min將乙炔氣體的流量增大0.5~2sccm,沉積該梯度層的時間為80~120min。
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