TW201425625A - 鍍膜件及其製備方法 - Google Patents

鍍膜件及其製備方法 Download PDF

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TW201425625A
TW201425625A TW102102766A TW102102766A TW201425625A TW 201425625 A TW201425625 A TW 201425625A TW 102102766 A TW102102766 A TW 102102766A TW 102102766 A TW102102766 A TW 102102766A TW 201425625 A TW201425625 A TW 201425625A
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substrate
chromium
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chun-jie Zhang
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Fih Hong Kong Ltd
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Abstract

一種鍍膜件，其包括基材及形成於基材表面的色彩層，該色彩層為鉻鋁矽層，該色彩層中含有的鉻、鋁、矽的原子比為1～3：0.5～2：0.3～1；該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於25至28，a*座標介於-1至-6，b*座標介於-5至-9。所述鍍膜件呈現具有吸引力的金屬質感的藍色外觀，提高了鍍膜件的外觀競爭力。此外，本發明還提供一種所述鍍膜件的製備方法。

Description

鍍膜件及其製備方法
本發明涉及一種鍍膜件及其製備方法。
隨著科技的迅速演進，移動電話、個人電腦等各式電子裝置發展迅速，其功能亦愈來愈豐富。為了使電子裝置的外殼具有豐富色彩，傳統上可利用彩色塑膠形成彩色塑膠外殼，或藉由噴漆方式在電子裝置的殼體表面形成色料層。然而，塑膠外殼與噴漆外殼不能呈現良好的金屬質感。
有鑒於此，有必要提供一種鍍膜件，其表面形成有具有金屬質感的藍色的膜層。
另外，還有必要提供一種上述鍍膜件的製備方法。
一種鍍膜件，其包括基材及形成於基材表面的色彩層，該色彩層為鉻鋁矽層，該色彩層中含有的鉻、鋁、矽的原子比為1～3：0.5～2：0.3～1；該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於25至28，a*座標介於-1至-6，b*座標介於-5至-9。
一種鍍膜件的製備方法，其包括如下步驟：
提供基材；
在該基材的表面形成色彩層，採用磁控濺射法，使用鉻靶、鋁靶和矽鋁，並通入工作氣體氬氣，該色彩層為鉻鋁矽層，該色彩層中含有的鉻、鋁、矽的原子比為1～3：0.5～2：0.3～1；該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於25至28，a*座標介於-1至-6，b*座標介於-5至-9。
所述鍍膜件呈現具有吸引力的金屬質感的藍色外觀，提高了鍍膜件的外觀競爭力。
10．．．鍍膜件
11．．．基材
13．．．打底層
15．．．過渡層
17．．．色彩層
20．．．真空鍍膜機
21．．．鍍膜室
23．．．鉻靶
24．．．鋁靶
26．．．矽靶
25．．．軌跡
30．．．真空泵
圖1為本發明一較佳實施例的鍍膜件的剖視圖。
圖2為本發明一較佳實施例真空鍍膜機的俯視示意圖。
請參閱圖1，本發明一較佳實施方式的鍍膜件10包括基材11、形成於基材11表面的打底層13、形成於打底層13表面的過渡層15及形成於過渡層表面的色彩層17。
該基材11的材質為不銹鋼或鋁合金。
該打底層13為金屬鉻層，其厚度為50～100nm。
該過渡層15為碳化鉻或氮化鉻層，其厚度為100～200nm。
該色彩層17為鉻鋁矽層，其厚度為0.3～0.5μm。該色彩層17中含有的鉻、鋁、矽的原子比為1～3：0.5～2：0.3～1。所述色彩層17呈現的色度區域於CIE LAB表色系統的L*座標介於25至28，a*座標介於-1至-6，b*座標介於-5至-9。該色彩層17呈現藍色且具有金屬質感。
本發明一較佳實施方式鍍膜件10的製備方法，其包括如下步驟：
請參閱圖2，提供一真空鍍膜機20，該真空鍍膜機20包括一鍍膜室21及連接於鍍膜室21的一真空泵30，真空泵30用以對鍍膜室21抽真空。該鍍膜室21內設有轉架(未圖示)、鉻靶23、鋁靶24和矽靶26。轉架帶動基材11沿圓形的軌跡25公轉，且基材11在沿軌跡25公轉時亦自轉。
提供基材11，該基材11的材質為不銹鋼或鋁合金。
對該基材11進行表面預處理。該表面預處理可包括常規的對基材11進行清洗及拋光等步驟。
採用磁控濺射法在經清洗後的基材11的表面濺鍍打底層13。濺鍍該打底層13在所述真空鍍膜機20中進行。將基材11放入鍍膜室21內，將該鍍膜室21抽真空至1.0×10-3～1.0×10-2Pa。鉻靶23使用射頻電源，濺鍍時，開啟鉻靶23並設置其功率為5～8kw，通入工作氣體氬氣，氬氣流量為100～200標況毫升每分鐘（sccm），鍍膜時鍍膜室內的溫度為90～110℃，施加於基材11的偏壓為-200～-350V，鍍膜時間為10～15min。
繼續採用磁控濺射法在打底層13的表面濺鍍過渡層15。濺鍍該過渡層15在所述真空鍍膜機20中進行。濺鍍時，開啟鉻靶23並設置其功率為4～6kw，通入工作氣體氬氣和反應氣體乙炔或氮氣，氬氣流量為120～150sccm，反應氣體的流量為30～50sccm，鍍膜時鍍膜室內的溫度為90～105℃，施加於基材11的偏壓為-200～-300V，鍍膜時間為30～50min。
繼續採用磁控濺射法在過渡層15的表面濺鍍色彩層17。濺鍍該色彩層17在所述真空鍍膜機20中進行。鋁靶24和矽靶26使用射頻電源，濺鍍時，開啟鉻靶23、鋁靶24和矽靶26並設置它們的功率分別為3～5kw、2～3kw和1～2kw，通入工作氣體氬氣，氬氣流量為80～120sccm，鍍膜時鍍膜室21內的溫度為80～100℃，施加於基材11的偏壓為-150～-250V，鍍膜時間為40～60min。
可以理解的，所述鍍膜使用的鉻靶23、鋁靶24和矽靶26也可只使用兩種靶材替代（鉻、鋁、矽三者中的兩種所組成的複合靶和鉻、鋁、矽三者中的另外一種的單獨靶），或是用鉻、鋁及矽三者的複合靶替代。
下面藉由實施例來對本發明進行具體說明。
實施例1
本實施例所使用的基材11的材質為不銹鋼316。
濺鍍打底層13：鉻靶23的功率為5kw，氬氣流量為150sccm，鍍膜時鍍膜室21內的溫度為100℃，施加於基材11的偏壓為-250V，鍍膜時間為12min。
濺鍍過渡層15：鉻靶23的功率為5kw，氬氣流量為125sccm，乙炔的流量為45sccm，鍍膜時鍍膜室21內的溫度為100℃，施加於基材11的偏壓為-250V，鍍膜時間為40min。
濺鍍色彩層17：鉻靶23、鋁靶24和矽靶26的功率分別為4kw、3kw和1.5kw，氬氣流量為110sccm，鍍膜時鍍膜室21內的溫度為85℃，施加於基材11的偏壓為-200V，鍍膜時間為50min。
所述色彩層17呈現的色度區域於CIE LAB表色系統的L*座標為26，a*座標為-4，b*座標為-5。
實施例2
本實施例所使用的基材11的材質為鋁合金6061。
濺鍍打底層13：鉻靶23的功率為5kw，氬氣流量為120sccm，鍍膜時鍍膜室內的溫度為90℃，施加於基材11的偏壓為-300V，鍍膜時間為12min。
濺鍍過渡層15：鉻靶23的功率為4kw，氬氣流量為120sccm，乙炔的流量為40sccm，鍍膜時鍍膜室21內的溫度為90℃，施加於基材11的偏壓為-270V，鍍膜時間為35min。
濺鍍色彩層17：鉻靶23、鋁靶24和矽靶26的功率分別為3kw、2kw和1kw，氬氣流量為105sccm，鍍膜時鍍膜室21內的溫度為80℃，施加於基材11的偏壓為-250V，鍍膜時間為45min。
所述色彩層17呈現的色度區域於CIE LAB表色系統的L*座標為26，a*座標為-3，b*座標為-6。
實施例3
本實施例所使用的基材11的材質為不銹鋼314。
濺鍍打底層13：鉻靶23的功率為6kw，氬氣流量為135sccm，鍍膜時鍍膜室內的溫度為120℃，施加於基材11的偏壓為-350V，鍍膜時間為15min。
濺鍍過渡層15：鉻靶23的功率為6kw，氬氣流量為130sccm，乙炔的流量為50sccm，鍍膜時鍍膜室21內的溫度為105℃，施加於基材11的偏壓為-250V，鍍膜時間為35min。
濺鍍色彩層17：鉻靶23、鋁靶24和矽靶26的功率分別為5kw、3kw和2kw，氬氣流量為120sccm，鍍膜時鍍膜室21內的溫度為100℃，施加於基材11的偏壓為-230V，鍍膜時間為55min。
所述色彩層17呈現的色度區域於CIE LAB表色系統的L*座標為25，a*座標為-2， b*座標為-8。
本發明的鍍膜件10藉由在基材11的表面依次濺鍍打底層13、過渡層15及色彩層17，膜層之間逐層過渡良好，且使所述鍍膜件10呈現具有吸引力的金屬質感的藍色外觀，提高了鍍膜件10的外觀競爭力。
10．．．鍍膜件
11．．．基材
13．．．打底層
15．．．過渡層
17．．．色彩層

Claims (11)

  1. 一種鍍膜件，其包括基材及形成於基材表面的色彩層，其改良在於：該色彩層為鉻鋁矽層，該色彩層中含有的鉻、鋁、矽的原子比為1～3：0.5～2：0.3～1；該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於25至28，a*座標介於-1至-6，b*座標介於-5至-9。
  2. 如申請專利範圍第1項所述之鍍膜件，其中該鍍膜件還包括形成於基材表面的打底層及形成於打底層表面的過渡層，所述色彩層形成於過渡層上。
  3. 如申請專利範圍第1項所述之鍍膜件，其中該打底層為金屬鉻層，該過渡層為碳化鉻或氮化鉻層。
  4. 如申請專利範圍第2項所述之鍍膜件，其中該打底層的厚度為50～100nm，該過渡層的厚度為100～200nm。
  5. 如申請專利範圍第1項所述之鍍膜件，其中該基材的材質為不銹鋼或鋁合金。
  6. 如申請專利範圍第1項所述之鍍膜件，其中該色彩層的厚度為0.3～0.5μm。
  7. 一種鍍膜件的製備方法，其包括如下步驟：
    提供基材；
    在該基材的表面形成色彩層，採用磁控濺射法，使用鉻靶、鋁靶和矽鋁，並通入工作氣體氬氣，該色彩層為鉻鋁矽層，該色彩層中含有的鉻、鋁、矽的原子比為1～3：0.5～2：0.3～1；該色彩層呈現的色度區域於CIE LAB表色系統的L*座標介於25至28，a*座標介於-1至-6，b*座標介於-5至-9。
  8. 如申請專利範圍第7項所述之鍍膜件的製備方法，其中製備該色彩層的具體工藝參數為：靶材均使用射頻電源，鉻靶、鋁靶和矽靶的功率分別為3～5kw、2～3kw和1～2kw，氬氣流量為80～120sccm，鍍膜時鍍膜室內的溫度為80～100℃，施加於基材的偏壓為-150～-250V，鍍膜時間為40～60min。
  9. 如申請專利範圍第7項所述之鍍膜件的製備方法，其中該方法還包括在形成色彩層前，在基材表面形成打底層以及在打底層表面形成過渡層的步驟。
  10. 如申請專利範圍第9項所述之鍍膜件的製備方法，其中製備該打底層的具體工藝參數為：使用鉻靶，鉻靶使用射頻電源，鉻靶的功率為5～8kw，通入工作氣體氬氣，氬氣流量為100～200 sccm，鍍膜時鍍膜室內的溫度為90～110℃，施加於基材的偏壓為-200～-350V，鍍膜時間為10～15min。
  11. 如申請專利範圍第9項所述之鍍膜件的製備方法，其中製備該過渡層的具體工藝參數為：使用鉻靶，鉻靶使用射頻電源，鉻靶的功率為4～6kw，通入工作氣體氬氣和反應氣體乙炔或氮氣，氬氣流量為120～150sccm，反應氣體的流量為30～50sccm，鍍膜時鍍膜室內的溫度為90～105℃，施加於基材的偏壓為-200～-300V，鍍膜時間為30～50min。
TW102102766A 2012-12-29 2013-01-25 鍍膜件及其製備方法 TW201425625A (zh)

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