CN103890234B - 钼合金膜及铟氧化膜的蚀刻液组合物 - Google Patents
钼合金膜及铟氧化膜的蚀刻液组合物 Download PDFInfo
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- CN103890234B CN103890234B CN201280051864.5A CN201280051864A CN103890234B CN 103890234 B CN103890234 B CN 103890234B CN 201280051864 A CN201280051864 A CN 201280051864A CN 103890234 B CN103890234 B CN 103890234B
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- film
- indium oxide
- oxide film
- molybdenum alloy
- alloy film
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0120442 | 2011-11-17 | ||
KR1020110120442A KR101349975B1 (ko) | 2011-11-17 | 2011-11-17 | 몰리브덴 합금막 및 인듐 산화막 식각액 조성물 |
PCT/KR2012/009340 WO2013073793A1 (ko) | 2011-11-17 | 2012-11-07 | 몰리브덴 합금막 및 인듐 산화막 식각액 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103890234A CN103890234A (zh) | 2014-06-25 |
CN103890234B true CN103890234B (zh) | 2016-06-08 |
Family
ID=48429818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280051864.5A Active CN103890234B (zh) | 2011-11-17 | 2012-11-07 | 钼合金膜及铟氧化膜的蚀刻液组合物 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101349975B1 (ko) |
CN (1) | CN103890234B (ko) |
WO (1) | WO2013073793A1 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI640655B (zh) * | 2013-12-23 | 2018-11-11 | 韓商東友精細化工有限公司 | 製備薄膜電晶體陣列之方法及用於鉬基金屬膜/金屬氧化物膜之蝕刻劑組成物 |
CN105220154B (zh) * | 2014-06-27 | 2018-05-11 | 日照旭日电子有限公司 | 一种铜或镍基材上热浸锡或电镀锡的脱除工艺 |
KR102209423B1 (ko) * | 2014-06-27 | 2021-01-29 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법 |
KR102209680B1 (ko) * | 2014-06-27 | 2021-01-29 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
KR102209685B1 (ko) * | 2014-06-30 | 2021-01-29 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법 |
KR20160001985A (ko) * | 2014-06-30 | 2016-01-07 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
KR101609114B1 (ko) | 2014-10-08 | 2016-04-20 | 주식회사 이엔에프테크놀로지 | 금속 배선막용 조성물 |
KR102265897B1 (ko) * | 2015-03-20 | 2021-06-16 | 동우 화인켐 주식회사 | 몰리브덴 함유 금속막의 식각액 조성물 및 이를 이용한 액정표시 장치용 어레이 기판의 제조방법 |
KR102468320B1 (ko) * | 2015-08-04 | 2022-11-18 | 동우 화인켐 주식회사 | 금속막 식각액 조성물 |
CN108780747B (zh) * | 2016-03-24 | 2022-09-30 | 株式会社Adeka | 蚀刻液组合物和蚀刻方法 |
KR102367814B1 (ko) * | 2016-03-30 | 2022-02-25 | 동우 화인켐 주식회사 | 몰리브덴 함유 금속막의 식각액 조성물 및 이를 이용한 액정표시 장치용 어레이 기판의 제조방법 |
CN107587135A (zh) * | 2016-07-08 | 2018-01-16 | 深圳新宙邦科技股份有限公司 | 一种钼铝钼蚀刻液 |
CN106086891B (zh) * | 2016-08-11 | 2018-10-26 | 江阴江化微电子材料股份有限公司 | 一种高世代平板铜钛膜酸性蚀刻液 |
CN112663064A (zh) * | 2020-12-16 | 2021-04-16 | 江苏艾森半导体材料股份有限公司 | 一种铜钼金属蚀刻液及其制备方法和应用 |
CN114929836B (zh) * | 2021-12-07 | 2023-06-27 | 晶瑞电子材料股份有限公司 | 一种非金属氧化物膜用缓冲蚀刻液 |
CN116282091A (zh) * | 2023-03-27 | 2023-06-23 | 青海盐湖工业股份有限公司 | 溶镁剂及氧化镁产品的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102177219A (zh) * | 2008-11-12 | 2011-09-07 | 韩国泰科诺赛美材料株式会社 | 透明导电膜蚀刻剂 |
KR20110113902A (ko) * | 2010-04-12 | 2011-10-19 | 솔브레인 주식회사 | 박막 트랜지스터 액정표시장치용 식각조성물 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101681130A (zh) * | 2007-03-31 | 2010-03-24 | 高级技术材料公司 | 用于晶圆再生的材料剥除方法 |
KR20100040010A (ko) * | 2008-10-09 | 2010-04-19 | (주)이그잭스 | 저과산화수소형 구리 또는 구리 합금 막의 에칭제 |
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2011
- 2011-11-17 KR KR1020110120442A patent/KR101349975B1/ko active IP Right Grant
-
2012
- 2012-11-07 WO PCT/KR2012/009340 patent/WO2013073793A1/ko active Application Filing
- 2012-11-07 CN CN201280051864.5A patent/CN103890234B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102177219A (zh) * | 2008-11-12 | 2011-09-07 | 韩国泰科诺赛美材料株式会社 | 透明导电膜蚀刻剂 |
KR20110113902A (ko) * | 2010-04-12 | 2011-10-19 | 솔브레인 주식회사 | 박막 트랜지스터 액정표시장치용 식각조성물 |
Also Published As
Publication number | Publication date |
---|---|
WO2013073793A1 (ko) | 2013-05-23 |
CN103890234A (zh) | 2014-06-25 |
KR20130054826A (ko) | 2013-05-27 |
KR101349975B1 (ko) | 2014-01-15 |
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