CN103890234B - 钼合金膜及铟氧化膜的蚀刻液组合物 - Google Patents

钼合金膜及铟氧化膜的蚀刻液组合物 Download PDF

Info

Publication number
CN103890234B
CN103890234B CN201280051864.5A CN201280051864A CN103890234B CN 103890234 B CN103890234 B CN 103890234B CN 201280051864 A CN201280051864 A CN 201280051864A CN 103890234 B CN103890234 B CN 103890234B
Authority
CN
China
Prior art keywords
film
indium oxide
oxide film
molybdenum alloy
alloy film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280051864.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN103890234A (zh
Inventor
申孝燮
金世训
李恩庆
柳炫圭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ENF Technology CO Ltd
Original Assignee
ENF Technology CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ENF Technology CO Ltd filed Critical ENF Technology CO Ltd
Publication of CN103890234A publication Critical patent/CN103890234A/zh
Application granted granted Critical
Publication of CN103890234B publication Critical patent/CN103890234B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/26Acidic compositions for etching refractory metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/44Compositions for etching metallic material from a metallic material substrate of different composition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/30Acidic compositions for etching other metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201280051864.5A 2011-11-17 2012-11-07 钼合金膜及铟氧化膜的蚀刻液组合物 Active CN103890234B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2011-0120442 2011-11-17
KR1020110120442A KR101349975B1 (ko) 2011-11-17 2011-11-17 몰리브덴 합금막 및 인듐 산화막 식각액 조성물
PCT/KR2012/009340 WO2013073793A1 (ko) 2011-11-17 2012-11-07 몰리브덴 합금막 및 인듐 산화막 식각액 조성물

Publications (2)

Publication Number Publication Date
CN103890234A CN103890234A (zh) 2014-06-25
CN103890234B true CN103890234B (zh) 2016-06-08

Family

ID=48429818

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280051864.5A Active CN103890234B (zh) 2011-11-17 2012-11-07 钼合金膜及铟氧化膜的蚀刻液组合物

Country Status (3)

Country Link
KR (1) KR101349975B1 (ko)
CN (1) CN103890234B (ko)
WO (1) WO2013073793A1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI640655B (zh) * 2013-12-23 2018-11-11 韓商東友精細化工有限公司 製備薄膜電晶體陣列之方法及用於鉬基金屬膜/金屬氧化物膜之蝕刻劑組成物
CN105220154B (zh) * 2014-06-27 2018-05-11 日照旭日电子有限公司 一种铜或镍基材上热浸锡或电镀锡的脱除工艺
KR102209423B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR102209680B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
KR102209685B1 (ko) * 2014-06-30 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR20160001985A (ko) * 2014-06-30 2016-01-07 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
KR101609114B1 (ko) 2014-10-08 2016-04-20 주식회사 이엔에프테크놀로지 금속 배선막용 조성물
KR102265897B1 (ko) * 2015-03-20 2021-06-16 동우 화인켐 주식회사 몰리브덴 함유 금속막의 식각액 조성물 및 이를 이용한 액정표시 장치용 어레이 기판의 제조방법
KR102468320B1 (ko) * 2015-08-04 2022-11-18 동우 화인켐 주식회사 금속막 식각액 조성물
CN108780747B (zh) * 2016-03-24 2022-09-30 株式会社Adeka 蚀刻液组合物和蚀刻方法
KR102367814B1 (ko) * 2016-03-30 2022-02-25 동우 화인켐 주식회사 몰리브덴 함유 금속막의 식각액 조성물 및 이를 이용한 액정표시 장치용 어레이 기판의 제조방법
CN107587135A (zh) * 2016-07-08 2018-01-16 深圳新宙邦科技股份有限公司 一种钼铝钼蚀刻液
CN106086891B (zh) * 2016-08-11 2018-10-26 江阴江化微电子材料股份有限公司 一种高世代平板铜钛膜酸性蚀刻液
CN112663064A (zh) * 2020-12-16 2021-04-16 江苏艾森半导体材料股份有限公司 一种铜钼金属蚀刻液及其制备方法和应用
CN114929836B (zh) * 2021-12-07 2023-06-27 晶瑞电子材料股份有限公司 一种非金属氧化物膜用缓冲蚀刻液
CN116282091A (zh) * 2023-03-27 2023-06-23 青海盐湖工业股份有限公司 溶镁剂及氧化镁产品的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102177219A (zh) * 2008-11-12 2011-09-07 韩国泰科诺赛美材料株式会社 透明导电膜蚀刻剂
KR20110113902A (ko) * 2010-04-12 2011-10-19 솔브레인 주식회사 박막 트랜지스터 액정표시장치용 식각조성물

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101681130A (zh) * 2007-03-31 2010-03-24 高级技术材料公司 用于晶圆再生的材料剥除方法
KR20100040010A (ko) * 2008-10-09 2010-04-19 (주)이그잭스 저과산화수소형 구리 또는 구리 합금 막의 에칭제

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102177219A (zh) * 2008-11-12 2011-09-07 韩国泰科诺赛美材料株式会社 透明导电膜蚀刻剂
KR20110113902A (ko) * 2010-04-12 2011-10-19 솔브레인 주식회사 박막 트랜지스터 액정표시장치용 식각조성물

Also Published As

Publication number Publication date
WO2013073793A1 (ko) 2013-05-23
CN103890234A (zh) 2014-06-25
KR20130054826A (ko) 2013-05-27
KR101349975B1 (ko) 2014-01-15

Similar Documents

Publication Publication Date Title
CN103890234B (zh) 钼合金膜及铟氧化膜的蚀刻液组合物
CN103668208B (zh) 铜钼合金膜的蚀刻液组合物
KR102058679B1 (ko) 구리막, 몰리브덴막 및 구리-몰리브덴 합금막의 식각액 조성물
TWI503451B (zh) 用以蝕刻金屬層之組成物
KR101333551B1 (ko) 구리와 몰리브덴 합금막의 식각액 조성물
CN104513983A (zh) 铜及钼含有膜的蚀刻液组合物
CN104513981A (zh) 铜及钼含有膜的蚀刻液组合物
TW201518545A (zh) 液晶顯示器用陣列基板的製造方法
TW201445008A (zh) 銅質金屬層蝕刻組成物及製備金屬線方法
CN104419930A (zh) 蚀刻液组合物及液晶显示装置用阵列基板的制造方法
CN103924242B (zh) 铜/钼膜或铜/钼合金膜的蚀刻液组合物
CN103184453A (zh) 薄膜晶体管液晶显示装置的蚀刻组合物
CN103526206A (zh) 一种金属布线蚀刻液及利用其的金属布线形成方法
CN103814432A (zh) 增大蚀刻液蚀刻用量的铜/钼合金膜的蚀刻方法
CN107988598A (zh) 蚀刻液组合物和显示装置用阵列基板的制造方法
CN102576170A (zh) 制造用于液晶显示器的阵列基板的方法
TWI632670B (zh) 用於銅基金屬膜的蝕刻劑組合物及製造液晶顯示器用陣列基板的方法
TWI614550B (zh) 液晶顯示裝置用陣列基板的製備方法及其多層膜用蝕刻液組合物
KR102400343B1 (ko) 금속막 식각액 조성물 및 이를 사용한 표시장치용 어레이 기판의 제조방법
CN103107130B (zh) 用于液晶显示器的阵列基板及其制造方法,蚀刻液组合物和形成金属配线的方法
KR101539765B1 (ko) 액정표시장치용 어레이 기판의 제조 방법
CN111755461B (zh) 液晶显示装置用阵列基板的制造方法及用于其的铜系金属膜蚀刻液组合物
TW202126858A (zh) 蝕刻液組合物
TW201627473A (zh) 氧化銦層蝕刻液組合物和利用其製造液晶顯示裝置的陣列基板的方法
KR102459681B1 (ko) 구리계 금속막용 식각액 조성물, 이를 이용한 액정표시장치용 어레이 기판의 제조방법, 및 액정표시장치용 어레이 기판

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant