CN103882402A - Vacuum processing apparatus and substrate processing method - Google Patents

Vacuum processing apparatus and substrate processing method Download PDF

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Publication number
CN103882402A
CN103882402A CN201410146888.XA CN201410146888A CN103882402A CN 103882402 A CN103882402 A CN 103882402A CN 201410146888 A CN201410146888 A CN 201410146888A CN 103882402 A CN103882402 A CN 103882402A
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China
Prior art keywords
substrate
film
road
film forming
filming chamber
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CN103882402B (en
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高木善胜
佐藤重光
大空弘树
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Ulvac Inc
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Ulvac Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Disclosed is a vacuum processing apparatus (1) wherein a plurality of processing chambers for performing prescribed process to substrates (S) to be processed are connected in series. The vacuum processing apparatus (1) is provided with a first substrate transfer path (15) between the processing chambers of the vacuum processing apparatus, and a second substrate transfer path (16), which is arranged in parallel to the first substrate transfer path (15) for transferring the substrates and permits the prescribed process to be performed in each processing chamber. At least in two of the processing chambers, a transfer path changing means (17) is arranged for shifting the substrate between the first substrate transfer path and the second substrate transfer path.

Description

Vacuum treatment installation and substrate processing method using same
The application be international application no be PCT/JP2008/071472, international filing date be on November 26th, 2008, in the divisional application of the application for a patent for invention " vacuum treatment installation and substrate processing method using same " that on May 12nd, 2010 enters the China national stage, application number is 200880115649.0.
Technical field
The present invention relates to vacuum treatment installation and substrate processing method using same.
Background technology
At present, as the vacuum treatment installation of film forming on the large substrates such as plasma display use, there is so-called longitudinal type feeding type vacuum treatment installation (for example, with reference to patent documentation 1).This device is the longitudinal type vacuum treatment installation that possesses three filming chamber, substrate carrier, load locking room, it is configured to, in indoor and three filming chamber, outlet, these two transport paths of loop are set in load lock, and, in the end the filming chamber of portion to possess the substrate carrier of making traversing moving with respect to these transport paths, the transfer mechanism from the first transport path as outlet to the second transport path transfer as loop., in this device, each film forming processing is arranged to vacuum processing chamber, stacked trilamellar membrane on substrate.
Patent documentation 1:(Japan) JP 2005-340425 communique (with reference to its claim 1 and Fig. 1)
In above-mentioned one-tenth film structural component, if heating unit is installed between two transport paths, in the end the vacuum processing chamber of portion possesses transfer mechanism, can realize save space, cost degradation.
But, follow the further maximization of substrate, expect more save space and compact device.In addition, in above-mentioned film deposition system, be a route owing to processing route, therefore can not carry out route change in intermediate treatment chamber.Therefore, there are the following problems: in the case of the film formation time of each filming chamber is different, in the work of the long filming chamber of film formation time, waiting time occurs in other filming chamber, situation about reducing as device global existence work ratio.In addition, because the filming chamber of portion in the end possesses transfer mechanism, so when substrate is not delivered to this aftermost filming chamber, substrate carrier can not change transport path.Thus, can not make substrate carrier move to loop from outlet, even if other filming chamber is not abnormal, in the time that aftermost filming chamber is safeguarded, also can have the problem that can not make device work.
Summary of the invention
Therefore, problem of the present invention, in view of the problem points of above-mentioned prior art, provides a kind of compacter vacuum treatment installation.The vacuum treatment installation of the high and functional excellence of a kind of workability is provided in addition.In addition, other problem of the present invention is to provide and uses this vacuum treatment installation, does not extend the productive temp time and substrate processing method using same that can treatment substrate.
Vacuum treatment installation of the present invention, it is connected in series multiple treatment chambers that substrate carried out to predetermined processing, it is characterized in that, in described vacuum treatment installation, be provided with the first substrate arranging between the multiple treatment chambers that spread all over vacuum treatment installation and carry road, carry road to be arranged side by side and the second substrate that substrate carried out to the predetermined processing in chambers when conveying substrate is carried road with respect to first substrate, and, at least two treatment chambers in described multiple treatment chambers are provided with for carry road and second substrate to carry between road at first substrate and make the conveying road that substrate moves change member.
In vacuum treatment installation of the present invention, carry road to change member by arranging at least two treatment chambers, change in the treatment chamber of member being provided with this conveying road, even substrate is carried on road in first substrate in the time of conveying substrate, also can make it carry road to move at the second substrate that carries out predetermined processing, therefore, can carry out repeatedly identical processing.Therefore, owing to not needing that multiple treatment chambers that carry out same treatment are set, so device of the present invention is compact.In addition, for example form 3 layers in the order of pressing A film, B film, A film, in existing longitudinal type feeding type vacuum treatment installation, need to be by A treatment chamber for film, B film three filming chamber that are linked in sequence with treatment chamber and A film treatment chamber, as long as but have A film treatment chamber and B film treatment chamber Zhe Liangge membrane forming process room in the application.
At least one membrane forming process room beyond the aftermost treatment chamber being preferably connected in series in described treatment chamber and aftermost treatment chamber is provided with described conveying road and changes member.
Not only aftermost treatment chamber, and not that aftermost membrane forming process room also arranges described conveying road change member, thus, can form a membrane forming process room for same film, therefore, in the case of implementing to form the film of multiple same film, do not need a vacuum treatment installation that multiple membrane forming process room are set.In this situation, need large-scale power supply or become film structural component etc. owing to forming membrane forming process room, therefore, as long as can omit membrane forming process room, just can be compacter and utility routine is few, and then cost degradation.
Preferably, described vacuum treatment installation possesses load locking room, heating chamber, the first membrane forming process room, the second membrane forming process room, be provided with described conveying road change member in the first membrane forming process room and the second membrane forming process room, and the first membrane forming process room and the second membrane forming process room form the film differing from one another.According to such formation, can form by Liang Ge membrane forming process room the film of three layers.
Substrate processing method using same of the present invention, it uses vacuum treatment installation, manage throughout chamber substrate is carried out to predetermined processing, described vacuum treatment installation is connected in series multiple treatment chambers that substrate carried out to predetermined processing, and be provided with and spread all over the first substrate conveying road arranging between the plurality for the treatment of chamber, carry road with the second substrate of carrying road the substrate in chambers to be carried out to predetermined processing when being arranged side by side and carrying described substrate with respect to first substrate, and, in described multiple treatment chambers, at least two treatment chambers are provided with for making substrate carry road and second substrate to carry conveying road mobile between road to change member at first substrate, it is characterized in that, this substrate processing method using same has: the first substrate treatment process of at a treatment chamber, first substrate being carried out predetermined processing, at a treatment chamber, second substrate is carried out the second substrate treatment process of predetermined processing, carry out respectively other processing substrate operation of predetermined processing to carried out the first substrate of predetermined processing and the 3rd substrate in described first substrate treatment process at other treatment chamber, carry out the 3rd processing substrate operation of predetermined processing to carried out the 3rd substrate of predetermined processing in described other processing substrate operation at a treatment chamber, described other processing substrate operation is carried out in described second substrate treatment process, and, in described other processing substrate operation, by be located at the conveying road of described other treatment chamber change member make to be moved into first substrate in described other treatment chamber and the 3rd substrate one of at least carry road and described second substrate to carry between road at described first substrate to move.
According to substrate processing method using same of the present invention, during a substrate being carried out to predetermined processing in a treatment chamber, can carry out film forming to remaining two substrates at other treatment chamber, therefore, the productive temp time, without waste, can be carried out to high workload rate multilayer film forming.
In this situation, particularly, described other processing substrate operation possesses: described first substrate carries road to be moved into described other treatment chamber via first substrate, utilize afterwards described conveying road to change member from second substrate described in described first substrate conveying road direction carries road to move, carry out predetermined processing, after predetermined processing finishes, the operation of carrying road to take out of from described other treatment chamber via described second substrate; Described the 3rd substrate carries road to be moved in described other treatment chamber via described first substrate, utilize afterwards described conveying road to change member from second substrate described in described first substrate conveying road direction carries road to move, carry out predetermined processing, after predetermined processing finishes, carry road to move into the operation for the treatment of chamber described in via described second substrate.Or, described other processing substrate operation possesses: described first substrate carries road to be moved in described other treatment chamber via first substrate, utilize described conveying road to change member from second substrate described in described first substrate conveying road direction carries road to move, carry out predetermined processing, after predetermined processing finishes, utilize described conveying road to change member and carry described in road direction first to possess the operation of carrying road to move from described second substrate; Described the 3rd substrate carries road to be moved in described other treatment chamber via described second substrate, carries out predetermined processing, after predetermined processing finishes, carries road to move into the operation for the treatment of chamber described in via described second substrate.According to such method, can not extend the productive temp time and carry out film forming.
In addition, other substrate processing method using same of the present invention, it uses vacuum treatment installation, manage throughout chamber substrate is carried out to predetermined processing, described vacuum treatment installation is connected in series multiple treatment chambers that substrate carried out to predetermined processing, and be provided with and spread all over the first substrate conveying road arranging between the plurality for the treatment of chamber, carry road with the second substrate of carrying road the substrate in chambers to be carried out to predetermined processing when being arranged side by side and carrying described substrate with respect to first substrate, and, at least two treatment chambers in described multiple treatment chambers are provided with for making substrate carry road and second substrate to carry conveying road mobile between road to change member at first substrate, substrate is moved into the treatment chamber of forefront, carry road and second substrate to carry road that substrate is moved into chambers via first substrate, it is characterized in that, at the treatment chamber of regulation, utilize and carry change member in road to carry between road and second substrate conveying road mobile more than twice at first substrate, simultaneously, treatment chamber in this regulation carries out more than twice predetermined processing.According to substrate processing method using same of the present invention, use above-mentioned vacuum treatment installation, utilize and carry change member in road mobile more than twice between first substrate conveying road and second substrate conveying road, thus, can carry out predetermined processing twice at same treatment chamber.
Vacuum treatment installation of the present invention, because treatment chamber is few, so compacter.And carry road to change member owing to being provided with at plural treatment chamber, so can implement various films, therefore, realize the excellent excellent like this effect of mechanicalness excellence and workability.In addition, according to the substrate processing method using same that has used vacuum treatment installation of the present invention, use compacter device, realize do not extend the productive temp time and can film forming excellent like this effect.
Brief description of the drawings
Fig. 1 is the schematic diagram that represents the formation of vacuum treatment installation 1 of the present invention;
Fig. 2 is the diagrammatic cross-section that uses the substrate of film film forming of the present invention;
Fig. 3 represents (a) sequential chart for film of the present invention is described and (b) schematic diagram of substrate transport path;
Fig. 4 is the schematic diagram of the transport path of the substrate for film of the present invention is described;
Fig. 5 is the sequential chart for film of the present invention is described, (a) represents the situation of the first film, (b) represents the situation of the second film, (c) represents the situation of the 3rd film;
Fig. 6 represents (a) sequential chart for the second film is described and (b) schematic diagram of substrate transport path;
Fig. 7 is the schematic diagram of the transport path of the substrate for the present invention's the second film is described;
Fig. 8 represents (a) sequential chart for the 3rd film is described and (b) schematic diagram of substrate transport path.
Nomenclature
1 vacuum treatment installation
2 substrate carriers
11 load locking rooms
12 heating chambers
13 first filming chamber
14 second filming chamber
15 first carry road
16 second carry road
17 route diversion members
S substrate
Embodiment
Fig. 1 is the constructed profile that represents the formation of longitudinal type vacuum treatment installation of the present invention.Longitudinal type vacuum treatment installation 1 is generally perpendicularly to keep substrate S by the substrate carrier 2 of frame shape, the vacuum treatment installation of the longitudinal type feeding type of simultaneously substrate S being processed, possesses load locking room 11, heating chamber 12, the first filming chamber 13, the second filming chamber 14 in order.Between each chamber, be provided with the family of power and influence 10, each chamber can be processed respectively independently in a vacuum.
In longitudinal type vacuum treatment installation 1, carry road 16 from load locking room 11 until the second filming chamber 14 is provided with the first conveying road 15 and second parallel to each other of conveying substrate.Second carries road 16 to be arranged at one-tenth film structural component 131 and 141 sides that arrange in the first filming chamber 13 and the second filming chamber 14.First carries road 15 and second to carry on road 16 is equipped with respectively two tracks, and substrate carrier 2 moves on this track by the wheel arranging in substrate carrier bottom.In this situation, below substrate carrier 2, be provided with tooth bar, and, be provided with by the pinion(gear) of the revolving force rotation of electric motor in load locking room 11, heating chamber 12, the first filming chamber 13 and the second filming chamber 14, therefore, make this rack-and-pinion engagement, the motivating force of electric motor is passed to substrate carrier 2, conveying substrate carrier 2.
The formation of load locking room 11 is, is provided with not shown vacuum pump, can be by interior load locking room 11 vacuum exhaust the vacuum tightness to regulation, and can keep this vacuum tightness.
The formation of heating chamber 12 is, be provided with not shown vacuum pump, the vacuum tightness that interior heating chamber 12 vacuum exhaust extremely can be specified, and can keep this vacuum tightness, and, can carry substrate on road 15 be warming up to the temperature of regulation on the second conveying road 16 or first by heating unit 121.
Be provided with not shown vacuum pump in the first filming chamber 13 and the second filming chamber 14, the vacuum tightness that the interior vacuum exhaust of the first filming chamber 13 and the second filming chamber 14 extremely can be specified, and can keep this vacuum tightness.In addition, be provided with into film structural component 131 in the first filming chamber 13, be provided with into film structural component 141 in the second filming chamber 14.As becoming film structural component, can use known one-tenth film structural component, for example, by the sputtering film-forming in the situation that, target and sputter gas can be set and import member and carry out film forming.In addition, by CVD method film forming in the situation that, film forming gas importing member can be set and carry out film forming.That become film structural component 131 and 141 film forming by these is the substrate S of the one- tenth film location 132 and 142 on the second conveying road 16, and first carries the not film forming of substrate on road 15.
In addition, be provided with the route diversion member 17 that can make substrate carrier 2 movement between the first conveying road 15 and the second conveying road 16 in the first filming chamber 13 and the second filming chamber 14.Not diagram in detail of route diversion member 17, but is for example configured to, can be by the maintaining part supporting substrates carrier 2 of housing of being located at substrate carrier 2, and make substrate carrier 2 on the first conveying road 15 and second carry parallel between road 16, change and carry road.
In longitudinal type vacuum treatment installation of the present invention, utilize the substrate carrier 2 of above-mentioned formation to carry road 15 and second to carry conveying substrate S on road 16 each first, can be in each indoor processing that substrate S is specified.In addition, in the first filming chamber, even in the situation of substrate S on the first conveying road 15, also can make substrate S move on the second conveying road 16 by route diversion member 17, the processing that can specify, therefore, carrying out repeatedly, in the film of same film forming, can omitting the filming chamber that carries out same film forming.; in existing vacuum treatment installation; due to only in the end the treatment chamber of portion be provided with route diversion member; therefore; from load locking room to aftermost second filming chamber of forefront, substrate is passed through on the second conveying road; finish after a series for the treatment of process, change to the first conveying road by route diversion member, can on the first conveying road, move.Substrate does not return to the second conveying road moving to behind the first conveying road, therefore, for example, can not return to again halfway the second conveying road, repeats same film formation process.Therefore, need the treatment chamber of the quantity of the treatment process of film.But, in the application, because treatment chamber halfway is also provided with route diversion member 17, even so have substrate S on the first conveying road 15, in the time of the processing that will specify, also can substrate be moved on the second conveying road 16 by route diversion member 17, the processing that can specify.Therefore, can become same film with the treatment chamber number form fewer than film formation process number, therefore, vacuum treatment installation 1 of the present invention, compared with at present, is compacter apparatus structure.
Below, the film that has used longitudinal type vacuum treatment installation of the present invention is described.
If use longitudinal type vacuum treatment installation 1 of the present invention, on the second conveying road 16, carry, move into from load locking room 11, after the first filming chamber 13 and second filming chamber's 14 film forming, move to the first conveying road 15 by route diversion member 17 in the second filming chamber 14, make the second filming chamber 14, the first filming chamber 13, heating chamber 12 and load locking room 11 by and take out substrate, thus, can on substrate S, form two membranes.
In addition, if use longitudinal type vacuum treatment installation 1 of the present invention, also can form 3 tunics shown in Fig. 2.Fig. 2 is the diagrammatic cross-section of the substrate S after film forming, film forming the first film 31, the second film 32, tertiary membrane 33 in order on substrate S.The first film 31 and tertiary membrane 33 are same film, and only the second film 32 is different films.In addition, the second film 32 is compared with the first film 31 and tertiary membrane 33, and the film formation time needing is long.For example, in figure, the second film 32 is compared with the first film 31 and tertiary membrane 33, and thickness is thicker, and therefore, film formation time is long.Use Fig. 3 to be elaborated to the method that uses vacuum treatment installation 1 to form 3 such tunic structures.
Fig. 3 (a) is the sequential chart while using vacuum treatment installation 1 of the present invention to form 3 tunic, and Fig. 3 (b) is the schematic diagram that is illustrated in the transport path of the substrate S in vacuum treatment installation 1.In sequential chart, the longitudinal axis represents the position of substrate S1, and transverse axis represents the time.In addition, at this, omit for load locking room 11.
At t=0, substrate S1 is moved into heating chamber 12 from the first conveying road 15, in the time that t=t1 is heated to the temperature of regulation, moves into the first filming chamber 13 via the first conveying road 15.Secondly, between t=t2～t3, substrate S1 moves to the second conveying road 16 from the first conveying road 15 by route diversion member 17 in the first filming chamber 13, film forming the first film 31 between t=t3～t4.Afterwards, substrate S1 is moved into the second filming chamber 14 at t=t4～t5, starts the film forming of the second film 32 from t=t5.After t=t6 film forming finishes, substrate S1 t=t6～t7 by route diversion member 17 from the second conveying road 16 moves to the first conveying road 15, be transported to the first filming chamber 13 via the first conveying road 15 from the second filming chamber 14.In the first filming chamber 13, substrate S1 moves to the second conveying road 16 from the first conveying road 15 by route diversion member 17 at t=t8～t9, starts the film forming of tertiary membrane 33 from t=t9.When in the time that t=t10 finishes film forming, substrate S1 is taken out of to heating chamber 12 at t=t10～t11.By such film, on substrate, between t=t3～t4, form the first film 31, form than the first film 31 and the second thick film 32 of tertiary membrane 33 at t=t5～t6, form the tertiary membrane identical with the first film at t=t9～t10.
Like this, if use longitudinal type vacuum treatment installation 1 of the present invention, the tertiary membrane 33 identical with the first mould 31 in film forming, can not be provided for film forming tertiary membrane filming chamber and in same the first filming chamber 13 on substrate S film forming 3 tunics.Therefore, in this vacuum treatment installation 1, even the in the situation that of 3 layers of film forming, filming chamber does not need to possess three, as long as possess two, therefore, can be compact, and can make at low cost.
In above-mentioned, only pay close attention to a plate base S1 and be illustrated, but use Fig. 4 and Fig. 5 (a) also to comprise the action of other substrate, the first film of the present invention is elaborated.
Fig. 4 is the schematic diagram that shows the transport path of the substrate S1～S5 of heating chamber 12, the first filming chamber 13 for the film that has used longitudinal type vacuum treatment installation of the present invention is described, the second filming chamber 14 in per time (1)～(11).In addition, Fig. 4 (1) afterwards, omits and represents the reference marks of substrate and the reference marks of expression treatment chamber part in addition.In addition, Fig. 5 (a) is corresponding with Fig. 4, represents the sequential chart of the feed status of substrate S1～S5, position mark (1)～(11) corresponding with Fig. 4 (1)～(11).Below, centered by Fig. 4, describe.
In Fig. 4 (1), particularly, substrate S3, at film forming the first film 31 of the first filming chamber 13, becomes the one-tenth film location 142 of the second filming chamber 14 that is located at the second conveying road 16 state of film forming the second film 32.Substrate S2 is at film forming the first film 13 of the first filming chamber 13, and after second filming chamber's 14 film forming the second films 32, becomes the one-tenth film location 132 of the first filming chamber 13 that is located at the second conveying road 16 state of film forming tertiary membrane 33.Substrate S1 is transported to heating chamber 12 via the first conveying road from load locking room 11, is heated to the temperature of regulation and keeps at heating chamber 12.
If the film forming of the heating of substrate S1 and the tertiary membrane 33 to substrate S2 finishes, make the family of power and influence between heating chamber 12 and the first filming chamber 13 open, substrate S2 is moved into heating chamber 12, and substrate S1 is moved into the first 13(of filming chamber with reference to Fig. 4 (2)).
Secondly,, due to substrate S2 film forming first film 31～tertiary membrane 33, therefore, directly take out of to load locking room 11 from heating chamber 12.Substrate S1 moves to the second conveying road 16 from the first conveying road 15 by route diversion member 17, is arranged on into film location 132.The substrate S1 that is located at into film location 132 starts the film forming of the first film 31 (with reference to Fig. 4 (3)).
In the film forming of substrate S1, while end for the film forming of the substrate S3 the film forming of the second film 32 from the moment of Fig. 4 (1), substrate S3 moves (with reference to Fig. 4 (4)) by route diversion member 17 from the one-tenth film location 142 on the second conveying road 16 to the first conveying road 15.
When the film forming of substrate S1 finishes, make the family of power and influence between the second filming chamber 14 and the first filming chamber 13 open, substrate S3 is moved into the first filming chamber 13 via the first conveying road 15, and substrate S1 is moved into the second 14(of filming chamber with reference to Fig. 4 (5) via the second conveying road 16).
Afterwards, substrate S1 is located to the one-tenth film location 142 of the second filming chamber 14, starts film forming.Substrate S3 moves to the second conveying road 16 from the first conveying road 15 by route diversion member 17, is arranged on into film location 132, in the first filming chamber 13, starts the film forming of tertiary membrane 33 on substrate S3.In the film forming of the tertiary membrane 33 for this substrate S3, substrate S4 is transported to heating chamber 12(with reference to Fig. 4 (6) from load locking room 11 via the first conveying road 15).
The heating of substrate S4 and while finishing for the film forming of the tertiary membrane 33 of substrate S3, make the family of power and influence between heating chamber 12 and the first filming chamber 13 open, substrate S3 is taken out of to heating chamber 12 via the second conveying road 16, and substrate S4 is moved into the first 13(of filming chamber with reference to Fig. 4 (7) via the first conveying road).
Substrate S3 film forming to the first film 31～tertiary membrane 33, therefore, is directly taken out of to load locking room 13 from heating chamber 12.Substrate S4 moves to the second conveying road 16 from the first conveying road 15 by route diversion member 17, is located at into film location 132, starts the film forming for the first film 31 of substrate S4.In the time that the film forming of the second film 32 for substrate S1 finishes, by route diversion member 17, substrate S1 is moved to (with reference to Fig. 4 (8)) from the one-tenth film location 142 on the second conveying road 16 to the first conveying road 15.
Afterwards, while finishing for the film forming of substrate S4, make the family of power and influence between the second filming chamber 14 and the first filming chamber 13 open, substrate S4 is moved into the second filming chamber 14 via the second conveying road 16, and substrate S1 is moved into the first 13(of filming chamber with reference to Fig. 4 (9) via the first conveying road 15).
Substrate S1 moves to the second conveying road 16 from the first conveying road 15 in the first filming chamber 13 by route diversion member 17, is arranged on into film location 132, starts the film forming of tertiary membrane 33.Substrate S4 is arranged on the one-tenth film location 142 of the second filming chamber 14, starts film forming.In the film forming of the tertiary membrane 33 for this substrate S1, via the first conveying road 15, substrate S5 is transported to heating chamber 12(with reference to Fig. 4 (10) from load locking room 11).
Finally, while end when the heating of substrate S5 with for the film forming of the tertiary membrane 33 of substrate S1, make the family of power and influence between heating chamber 12 and the first filming chamber 13 open, substrate S1 is taken out of to heating chamber 12 via the second conveying road 16, and substrate S5 is moved into the first filming chamber 13 via the first conveying road 15.Substrate S5 moves (with reference to Fig. 4 (11)) from the first conveying road 15 to the second conveying road 16 by route diversion member 17.Afterwards, substrate S1 film forming first film 31～tertiary membrane 33, therefore, is directly taken out of to load locking room 11 from heating chamber 12.In addition, not only substrate S1～S3, and for substrate S4 and S5, also identical with substrate S1～S3, can film forming 3 layers.
Like this, longitudinal type vacuum treatment installation of the present invention is carried road owing to changing substrate by route diversion member 17, so be the device of longitudinal type mode of movement, and on substrate, the second long film 32 of film formation time is being carried out between film stage by the second filming chamber 14 for substrate S1～S5, can be in the first filming chamber on other substrate film forming the first film 31 and tertiary membrane 33.Therefore, can not extend the productive temp time and use the film of the 3 layers of structure for the treatment of unit film forming that formed by Liang Ge filming chamber.
Use Fig. 6 to describe the second film that has used longitudinal type vacuum treatment installation of the present invention below.
The second film is different from the transport path of the substrate S of above-mentioned the first film, but can form equally the film shown in Fig. 2.Fig. 6 (a) is that sequential chart and the Fig. 6 (b) while representing to use device of the present invention to form 3 tunic is the schematic diagram that represents substrate transport path.In sequential chart, the longitudinal axis represents the position of substrate S, and transverse axis represents the time.In addition, at this, omit for load locking room 11.
At t=0, substrate S1 is moved into heating chamber 12 from the second conveying road 16, and in the time being heated to the temperature of regulation, at t=t1～t2, substrate S1 is moved into the first filming chamber 13 via the second conveying road 16.Secondly,, from t=t2, substrate S1 is at first filming chamber's 13 film forming the first films 31.After t=t3 film forming finishes, substrate S1 carries to the second filming chamber 14 from the first filming chamber 13 at t=t3～t4, starts the film forming of the second film 32 from t=t4.Finish after film forming at t=t5, substrate S1 t=t5～t6 by route diversion member 17 from the second conveying road 16 moves to the first conveying road 15, be transported to the first filming chamber 13 from the second filming chamber 14.Secondly, substrate S1, at t=t7～t8, moves to the second conveying road 16 from the first conveying road 15 by route diversion member 17 in the first filming chamber 13, starts the film forming of tertiary membrane 33 from t=t8.In the time that t=t9 finishes film forming, moving from the second conveying road 16 to the first conveying road 15 by route diversion member 17 at t=t9～t10, at t=t10～t11 substrate, S1 is taken out of to heating chamber 12.
By such film, on substrate, form the first film 31 at t=t2～t3, form than the first film and the second thick film 32 of tertiary membrane at t=t4～t5, form the tertiary membrane 33 identical with the first film at t=t8～t9.
Use Fig. 7 and Fig. 5 (b), the action that also comprises other substrate is elaborated to the formation method of this film.
Fig. 7 is the schematic diagram that shows the transport path of the substrate S1～S5 of heating chamber 12, the first filming chamber 13 for the film that has used longitudinal type vacuum treatment installation of the present invention is described, the second filming chamber 14 in per time (1)～(11).In addition, Fig. 7 (1) afterwards, omits and represents the reference marks of substrate and the reference marks of expression treatment chamber part in addition.In addition, Fig. 5 (b) is corresponding with Fig. 7, is the sequential chart that represents the conveying of substrate S1～S5 and become membrane stage, position mark (1)～(11) corresponding with Fig. 7 (1)～(11).Below, centered by Fig. 7, describe.
In Fig. 7 (1), substrate S3 after film forming the first film 31, becomes the one-tenth film location 142 of the second filming chamber 14 that is located at the second conveying road 16 state of film forming the second film 32 in the first filming chamber 13.Substrate S2 is at film forming the first film 31 of the first filming chamber 13, and after second filming chamber's 14 film forming the second films 32, becomes at first filming chamber's 13 film forming tertiary membranes 33, the state moving to the first conveying road from the second conveying road 16 by route diversion member 17.Substrate S1 is transported to heating chamber 12 via the second conveying road 16 from load locking room 11, is heated to the temperature of regulation and keeps at heating chamber 12.
When the mobile end of the heating of substrate S1 and substrate S2, make the family of power and influence between heating chamber 12 and the first filming chamber 13 open, substrate S2 is taken out of to heating chamber 12 via the first conveying road 15, and substrate S1 is moved into (with reference to Fig. 7 (2)) via the second conveying road 16 to the first filming chamber 13.
Secondly, substrate S1 is arranged at into film location 132, starts the film forming of the first film 31.Substrate S2 film forming first film 31～tertiary membrane 33, therefore, is directly taken out of to load locking room 11 from heating chamber 12.In the film forming of substrate S1, while end for the film forming of the substrate S3 the film forming of the second film 32 from the moment of Fig. 7 (1), substrate S3 moves (with reference to Fig. 7 (3)) by route diversion member 17 from the one-tenth film location 142 on the second conveying road 16 to the first conveying road 15.
When the film forming of substrate S1 finishes, make the family of power and influence between the second filming chamber 14 and the first filming chamber 13 open, substrate S3 is moved into the first filming chamber 13 via the first conveying road 15, and substrate S1 is moved into the second 14(of filming chamber with reference to Fig. 7 (4) via the second conveying road 16).
Afterwards, substrate S1 is located to the one-tenth film location 142 of the second filming chamber 14, starts film forming.Substrate S3 moves to the second conveying road 16 from the first conveying road 15 by route diversion member 17, is arranged on into film location 132, starts the film forming of tertiary membrane 33.In the film forming of the second film 32 for this substrate S1, substrate S4 is transported to heating chamber 12(with reference to Fig. 7 (5) from load locking room 11 via the first conveying road 16).
While end for the film forming of the tertiary membrane 33 of substrate S3, substrate S3 moves (with reference to Fig. 7 (6)) from the second conveying road 16 to the first conveying road 15 by route diversion member 17.
When the heating of the route diversion of substrate S3 and substrate S4 finishes, make the family of power and influence between heating chamber 12 and the first filming chamber 13 open, substrate S3 is taken out of to heating chamber 12 via the first conveying road 15, and substrate S4 is moved into the first filming chamber 13 via the second conveying road, beginning film forming.In addition, while end for the film forming of the second film 32 of substrate S1, substrate S1 moves (with reference to Fig. 7 (7)) from the second conveying road 16 to the first conveying road 15 by route diversion member 17.
Substrate S3 film forming first film 31～tertiary membrane 33, therefore, is directly taken out of to load locking room 11 via the first conveying road 15 from heating chamber 12.While end for the film forming of the first film 31 of substrate S4, make the family of power and influence between the second filming chamber 14 and the first filming chamber 13 open, substrate S4 is moved into the second filming chamber 14 via the second conveying road 16, is becoming film location 142 to start film forming.And substrate S1 is moved into the first 13(of filming chamber with reference to Fig. 7 (8) via the first conveying road 15).
Substrate S1 moves to the second conveying road 16 from the first conveying road 15 in the first filming chamber 13 by route diversion member 17, is located at into film location 132, starts the film forming of tertiary membrane 33.In the film forming of the second film 32 for substrate S4, substrate S5 is transported to heating chamber 12 from load locking room 11 via the second conveying road 16, starts heating (with reference to Fig. 7 (9)).
While end for the film forming of the tertiary membrane 33 of substrate S1, by route diversion member 17, substrate S1 moves (with reference to Fig. 7 (10)) from the second conveying road 16 to the first conveying road 15 in the first filming chamber 13.
Finally, while finishing the heating of substrate S5 and substrate S1 mobile, make the family of power and influence between heating chamber 12 and the first filming chamber 13 open, substrate S1 is taken out of to heating chamber 12 via the first conveying road 15, and substrate S5 is moved into the first filming chamber 13 via the second conveying road 16.Substrate S4 moves (with reference to Fig. 7 (11)) from the second conveying road 16 to the first conveying road 15 by route diversion member 17.Afterwards, substrate S1 film forming first film 31～tertiary membrane 33, therefore, taken out of to load locking room 11 from heating chamber 12.In addition, not only substrate S1～S3, and for substrate S4 and S5, also identical with substrate S1～S3, can film forming 3 layers.
Like this, longitudinal type vacuum treatment installation of the present invention is carried road owing to changing substrate by route diversion member 17, so be the device of longitudinal type mode of movement, and the second long film 32 of film formation time is carried out between film stage on substrate in the second filming chamber 14, can be in the first filming chamber, film forming the first film 31 and tertiary membrane 33 on other substrate.Therefore, can not extend the productive temp time and use the film of the 3 layers of structure for the treatment of unit film forming that formed by Liang Ge filming chamber.
In addition, as the 3rd film, in the second film, move into substrate and carry out film forming from the second conveying road 16, even but move into substrate from the first conveying road 15, equally also can use the treatment unit shown in Fig. 1 to carry out 3 layers of film forming.Use Fig. 8 to describe this point.
Fig. 8 (a) is that sequential chart and the Fig. 8 (b) while representing to use device of the present invention to form 3 tunic is the schematic diagram that represents the transport path of substrate.In sequential chart, the longitudinal axis represents the position of substrate S, and transverse axis represents the time.In addition, also omit load locking room 11 at this.
At t=0, substrate S1 is moved into heating chamber 12 from the first conveying road 15, in the time being heated to the temperature of regulation, at t=t1～t2, is moved into the first filming chamber 13 via the first conveying road 15.Secondly, at t=t2～t3, substrate S1 is moved to the second conveying road 16 from the first conveying road 15 by route diversion member 17 in the first filming chamber 13, from t=t3, start the film forming of the first film 31.In the time that t=t4 film forming finishes, substrate S1 moves to the first conveying road 15 from the second conveying road 16 by route diversion member 17.After mobile end, at t=t5～t6, substrate S1 carries to the second filming chamber 14 from the first filming chamber 13, moves by route diversion member 17 at t=t6～t7 from the first conveying road 15 to the second conveying road 16, starts the film forming of the second film 32 from t=t7.Finish after film forming at t=t8, substrate S1 is transferred to the first filming chamber 13 from the second filming chamber 14 at t=t8～t9.Then,, at t=9, in the first filming chamber 13, substrate S1 is started the film forming of tertiary membrane 33.In the time that t=10 finishes film forming, substrate S1 is taken out of to heating chamber 12 via the second conveying road 16 at t=t10～t11.
By such film, on substrate, form the first film 31 at t=t3～t4, form than the first film and the second thick film 32 of tertiary membrane at t=t7～t8, form the tertiary membrane 33 identical with the first film at t=t9～t10.
In addition, in Fig. 8, represent that the figure of other substrate transport path omits, but as shown in Fig. 5 (c), even if in this case, also can carry out film forming with the productive temp time identical with the second film shown in the first film shown in Fig. 5 (a) and Fig. 5 (b).
That is, in each film of the present invention, carry the substrate S on road 15 also to move on the second conveying road 16 by route diversion member 17, the first is also set in the first filming chamber 13, therefore, can carry out film forming twice in the first filming chamber 13.In this situation, the film formation time of the second film 32 is long, therefore, in the second film 32 film forming, can film forming the first film 31 and tertiary membrane 33, therefore, the time of wasting in film formation process is few.
In addition, in vacuum treatment installation 1 of the present invention, heater is arranged at heating chamber 12, but also can not arrange route diversion member 17 chamber first carry road 15 and second to carry between road 16 heater is set.
In addition, in above-mentioned embodiment, the first filming chamber 13 and the second filming chamber 14 at vacuum treatment installation 1 are provided with route diversion member 17, but as long as in the end the treatment chamber of portion and the treatment chamber that carries out twice same treatment in film formation process arrange respectively route diversion member 17.Even if for example do not carry out film forming processing, the such film of twice plasma exposure process, as long as plasma generation chamber is set at vacuum treatment installation 1, in this plasma generation chamber, route diversion member 17 is set in the case of implementing.
In above-mentioned of the present invention each film, can form and change the opportunity that the moving into of substrate taken out of according to the kind of film, film etc., device.
In addition, the in the situation that of only wanting selectively 1 layer of film forming on substrate, substrate S is carried on the second conveying road 16 from load locking room 11, only carry out film forming in the first filming chamber 13, make substrate S carry road 15 to move from the second conveying road direction first by route diversion member 17, take out substrate S by the first filming chamber 13, heating chamber 12 and load locking room 11, thus, also can on substrate S, form a skim.Therefore,, according to longitudinal type vacuum treatment installation 1 of the present invention, can the action of device be changed according to film formation process.In addition, in the situation that two Room the second filming chamber is set, even if one second filming chamber is in maintenance, also can carry out film forming by the second filming chamber of first filming chamber's 13 sides, can make substrate S carry road 15 to move from the second conveying road direction first by the route diversion member 17 of this filming chamber, remain in operation thus.
Embodiment 1
In the present embodiment, in the longitudinal type vacuum treatment installation 1 shown in Fig. 1, utilize the film identical with Fig. 5 on substrate, to carry out film forming.As becoming film structural component 131, Mo target is arranged in the mode with the substrate subtend of being located at into film location 132, meanwhile, as sputter gas, in the first filming chamber, import Ar gas.As becoming film structural component 141, Al target is arranged in the mode with the substrate subtend of being located at into film location 142, meanwhile, as sputter gas, in the second filming chamber, import Ar gas.As substrate, use the glass substrate of 2200mm × 2400mm × t0.7mm.
First, substrate S1 is moved into heating chamber 12 from the first conveying road 15, be heated to, after the temperature (approximately 100 DEG C) of regulation, substrate S1 have been moved into the first filming chamber 13 via the first conveying road 15.Secondly, substrate S1 is moved from the first conveying road 15 to the second conveying road 16 by route diversion member 17 in the first filming chamber 13, import sputter gas, start the film forming of Mo film.Through after approximately 10 seconds, finish film forming, carry out the exhaust of the first filming chamber.Secondly, substrate S1 is moved into the second filming chamber 14, import sputter gas, start the film forming of Al film.After the film forming of approximately 50 seconds and the Al film that is through with, substrate S1 is moved from the second conveying road 16 to the first conveying road 15 by route diversion member 17, carry out the exhaust of the second filming chamber 14 inside.Secondly, substrate S1 is carried to the first filming chamber 13 from the second filming chamber 14.In the first filming chamber 13, substrate S1 is moved to the second conveying road 16 from the first conveying road 15 by route diversion member 17, import sputter gas, again start the film forming of Mo film.Through after approximately 10 seconds, finish film forming, carry out, after exhaust, substrate S1 being taken out of to heating chamber 12.By such film, on substrate, form as the Mo film of the first film 31, as the Al film of the second film 32, as the Mo film of tertiary membrane 33.The thickness of each film is respectively about 50nm, about 300nm, about 50nm.In addition, for other substrate, also can on substrate, distinguish the film of 3 layers of structure of film forming.
Embodiment 2
In the present embodiment, except sneaked in right amount N in the Ar gas as sputter gas in the first filming chamber 2beyond gas this point, carry out similarly to Example 1 film forming.On substrate, form as the nitrogenize Mo film of the first film 31, as the Al film of the second film 32, as the nitrogenize Mo film of tertiary membrane.The thickness of each film is respectively about 50nm, about 300nm, about 50nm.In this situation, the time regulating due to the sputtering pressure that carries out before film forming can make substrate move, thus in film forming the productive temp time identical.
Utilizability in industry
According to longitudinal type vacuum treatment installation of the present invention, even also can process for large-scale substrate, therefore, can be used in art of display device manufacture.

Claims (4)

1. a film, it uses vacuum film formation apparatus, in each filming chamber, substrate is carried out to film forming, described vacuum film formation apparatus is connected in series multiple filming chamber that substrate carried out to film forming, and be provided with and spread all over the first substrate conveying road arranging between multiple filming chamber, with the second substrate conveying road that is arranged side by side and in carrying described substrate, the substrate in each filming chamber is carried out film forming with respect to first substrate conveying road, and, in at least Liang Ge filming chamber in described multiple filming chamber, be provided with for making substrate carry road and second substrate to carry conveying road mobile between road to change member at first substrate,
This film is characterised in that, comprises following operation:
Substrate (S3), at film forming the first film of the first filming chamber, becomes the one-tenth film location of the second filming chamber the state of film forming the second film of being located at second substrate conveying road;
Substrate (S2) is at film forming the first film and after second filming chamber's film forming the second film of the first filming chamber, becomes to be located at second substrate and to carry the one-tenth film location of the first filming chamber the state of film forming tertiary membrane on road;
Substrate (S1) carries road to be transported to heating chamber from load locking room via first substrate, is heated and keeps in heating chamber;
While end when the heating of substrate (S1) with for the film forming of the tertiary membrane of substrate (S2), make the family of power and influence between heating chamber and the first filming chamber open, substrate (S2) is moved into heating chamber, and substrate (S1) is moved into the first filming chamber;
Secondly, substrate (S2), by film forming to the first film～tertiary membrane, therefore, is directly taken out of to load locking room from heating chamber;
Substrate (S1) carries road direction second substrate to carry road to move by route diversion member from first substrate, is arranged on into film location;
The substrate (S1) of being located at into film location starts the film forming of the first film;
When in the film forming of substrate (S1), while end for the film forming of the substrate in the film forming of the second film (S3), substrate (S3) carries the one-tenth film location on road to carry road to move to first substrate from second substrate by route diversion member;
In the time that the film forming of substrate (S1) finishes, make the family of power and influence between the second filming chamber and the first filming chamber open, substrate (S3) carries road to be moved into the first filming chamber via first substrate, and substrate (S1) carries road to be moved into the second filming chamber via second substrate;
Afterwards, substrate (S1) is located to the one-tenth film location of the second filming chamber, is started film forming;
Substrate (S3) carries road direction second substrate to carry road to move by route diversion member from first substrate, is arranged on into film location, starts the film forming of tertiary membrane in the first filming chamber on substrate (S3);
In the film forming of the tertiary membrane for this substrate (S3), substrate (S4) carries road to be transported to heating chamber from load locking room via first substrate;
While end when the heating of substrate (S4) with for the film forming of the tertiary membrane of substrate (S3), make the family of power and influence between heating chamber and the first filming chamber open, substrate (S3) carries road direction heating chamber to be taken out of via second substrate, and substrate (S4) carries road to be moved into the first filming chamber via first substrate;
Substrate (S3) film forming to the first film～tertiary membrane, therefore, is directly taken out of to load locking room from heating chamber;
Substrate (S4) carries road direction second substrate to carry road to move by route diversion member from first substrate, is located at into film location, starts the film forming for the first film of substrate (S4);
In the time that the film forming of the second film for substrate (S1) finishes, by route diversion member, substrate (S1) is carried the one-tenth film location on road to carry road to move to first substrate from second substrate;
Afterwards, in the time finishing for the film forming of substrate (S4), make the family of power and influence between the second filming chamber and the first filming chamber open, substrate (S4) carries road to be moved into the second filming chamber via second substrate, and substrate (S1) carries road to be moved into the first filming chamber via first substrate;
Substrate (S1) carries road direction second substrate to carry road move from first substrate by route diversion member in the first filming chamber, is arranged on into film location, starts the film forming of tertiary membrane;
Substrate (S4) is arranged on the one-tenth film location of the second filming chamber, starts film forming;
In the film forming of the tertiary membrane for substrate (S1), carry road that substrate (S5) is transported to heating chamber from load locking room via first substrate;
While end when the heating of substrate (S5) with for the film forming of the tertiary membrane of substrate (S1), make the family of power and influence between heating chamber and the first filming chamber open, substrate (S1) carries road direction heating chamber to be taken out of via second substrate, and substrate (S5) carries road to be moved into the first filming chamber via first substrate;
Substrate (S5) carries road direction second substrate to carry road to move by route diversion member from first substrate;
Afterwards, substrate (S1) film forming to the first film～tertiary membrane, therefore, is directly taken out of to load locking room from heating chamber.
2. a film, it uses vacuum film formation apparatus, in each filming chamber, substrate is carried out to film forming, described vacuum film formation apparatus is connected in series multiple filming chamber that substrate carried out to film forming, and be provided with and spread all over the first substrate conveying road arranging between multiple filming chamber, with the second substrate conveying road that is arranged side by side and in carrying described substrate, the substrate in each filming chamber is carried out film forming with respect to first substrate conveying road, and, in at least Liang Ge filming chamber in described multiple filming chamber, be provided with for making substrate carry road and second substrate to carry conveying road mobile between road to change member at first substrate,
This film is characterised in that, comprises following operation:
Substrate (S3) is in the first filming chamber after film forming the first film, becomes to be located at second substrate and to carry the one-tenth film location of the second filming chamber the state of film forming the second film on road;
Substrate (S2) is at film forming the first film of the first filming chamber, and after second filming chamber's film forming the second film, becomes at first filming chamber's film forming tertiary membrane, by carrying road to change the state that member carries road direction first substrate to carry road to move from second substrate substrate;
Substrate (S1) carries road to be transported to heating chamber from load locking room via second substrate, is heated and keeps in heating chamber;
In the time of the heating of substrate (S1) and the mobile end of substrate (S2), make the family of power and influence between heating chamber and the first filming chamber open, substrate (S2) carries road direction heating chamber to be taken out of via first substrate, and substrate (S1) carries road direction the first filming chamber to be moved into via second substrate;
Secondly, substrate (S1) is arranged on into film location, starts the film forming of the first film;
Substrate (S2), by film forming to the first film～tertiary membrane, therefore, is directly taken out of to load locking room from heating chamber;
In the film forming of substrate (S1), while end for the film forming of the substrate in the film forming of the second film (S3), substrate (S3) carries the one-tenth film location on road to carry road to move to first substrate from second substrate by route diversion member;
In the time that the film forming of substrate (S1) finishes, make the family of power and influence between the second filming chamber and the first filming chamber open, substrate (S3) carries road to be moved into the first filming chamber via first substrate, and substrate (S1) carries road to be moved into the second filming chamber via second substrate;
Afterwards, substrate (S1) is located to the one-tenth film location of the second filming chamber, is started film forming;
Substrate (S3) carries road direction second substrate to carry road to move by route diversion member from first substrate, is arranged on into film location, starts the film forming of tertiary membrane;
In the film forming of the second film for this substrate (S1), substrate (S4) carries road to be transported to heating chamber from load locking room via second substrate;
In the time that the film forming of the tertiary membrane for substrate (S3) finishes, substrate (S3) carries road direction first substrate to carry road to move via route diversion member from second substrate;
In the time that the route diversion of substrate (S3) and the heating of substrate (S4) finish, make the family of power and influence between heating chamber and the first filming chamber open, substrate (S3) carries road direction heating chamber to be taken out of via first substrate, and substrate (S4) carries road to be moved into the first filming chamber via second substrate, starts film forming;
In the time that the film forming of the second film for substrate (S1) finishes, substrate (S1) carries road direction first substrate to carry road to move via route diversion member from second substrate;
Substrate (S3) film forming to the first film～tertiary membrane, therefore, carries road to be taken out of from heating chamber to load locking room via first substrate;
In the time that the film forming of the first film for substrate (S4) finishes, make the family of power and influence between the second filming chamber and the first filming chamber open, substrate (S4) carries road to be moved into the second filming chamber via second substrate, is becoming film location to start film forming;
And substrate (S1) carries road to be moved into the first filming chamber via first substrate;
Substrate (S1) carries road direction second substrate to carry road move from first substrate by route diversion member in the first filming chamber, is arranged on into film location, starts the film forming of tertiary membrane;
In the film forming of the second film for substrate (S4), carry road that substrate (S5) is transported to heating chamber from load locking room via second substrate, start heating;
In the time that the film forming of the tertiary membrane for substrate (S1) finishes, by route diversion member, substrate (S1) carries road direction first substrate to carry road to move from second substrate in the first filming chamber;
In the time of the heating of substrate (S5) and the mobile end of substrate (S1), make the family of power and influence between heating chamber and the first filming chamber open, substrate (S1) carries road direction heating chamber to be taken out of via first substrate, and substrate (S5) carries road to be moved into the first filming chamber via second substrate;
Substrate (S4) carries road direction first substrate to carry road to move by route diversion member from second substrate;
Afterwards, substrate (S1) film forming to the first film～tertiary membrane, therefore, is taken out of from heating chamber to load locking room.
3. a film, it uses vacuum film formation apparatus, in each filming chamber, substrate is carried out to film forming, described vacuum film formation apparatus is connected in series multiple filming chamber that substrate carried out to film forming, and be provided with and spread all over the first substrate conveying road arranging between multiple filming chamber, with the second substrate conveying road that is arranged side by side and in carrying described substrate, the substrate in each filming chamber is carried out film forming with respect to first substrate conveying road, and, in at least Liang Ge filming chamber in described multiple filming chamber, be provided with for making substrate carry road and second substrate to carry conveying road mobile between road to change member at first substrate,
This film is characterised in that,
In the time that substrate (S1) carries road to be moved into heating chamber and heat from first substrate, carry road to be moved into the first filming chamber via first substrate;
Secondly, described substrate (S1) via carrying road to change member, carries road direction second substrate to carry road to move from first substrate, film forming the first film in described the first filming chamber;
After this, described substrate (S1) is moved into the second filming chamber, starts the film forming of the second film;
After film forming finishes, described substrate (S1), via carrying road to change member, carries road direction first substrate to carry road to move from second substrate, afterwards, carries road from described the second filming chamber to the conveyance of described the first filming chamber via first substrate;
In described the first filming chamber, described substrate (S1), via carrying road to change member, carries road to move from second substrate described in described first substrate conveying road direction, starts the film forming of tertiary membrane;
In the time that film forming finishes, described substrate (S1) is taken out of to heating chamber;
By above film, on substrate, form described the first film, than the first film and thick described the second film of tertiary membrane, with the tertiary membrane of the first film same thickness.
4. a film, it uses vacuum film formation apparatus, in each filming chamber, substrate is carried out to film forming, described vacuum film formation apparatus is connected in series multiple filming chamber that substrate carried out to film forming, and be provided with and spread all over the first substrate conveying road arranging between multiple filming chamber, with the second substrate conveying road that is arranged side by side and in carrying described substrate, the substrate in each filming chamber is carried out film forming with respect to first substrate conveying road, and, in at least Liang Ge filming chamber in described multiple filming chamber, be provided with for making substrate carry road and second substrate to carry conveying road mobile between road to change member at first substrate,
This film is characterised in that,
In the time that substrate (S1) carries road to be moved into heating chamber and heat from second substrate, substrate (S1) carries road to be moved into the first filming chamber via second substrate;
Secondly, at above film forming the first film in described the first filming chamber of described substrate (S1);
After film forming finishes, described substrate (S1), from described the first filming chamber to the conveyance of described the second filming chamber, starts the film forming of the second film;
After film forming finishes, described substrate (S1), via carrying road to change member, carries road to move from first substrate described in described second substrate conveying road direction, afterwards, and from described the second filming chamber to the conveyance of described the first filming chamber;
Described substrate (S1), in described the first filming chamber, carries road to move via carrying road to change member from second substrate described in described first substrate conveying road direction, starts the film forming of tertiary membrane;
After film forming finishes, carry road to move via carrying road to change member from first substrate described in described second substrate conveying road direction, afterwards, described substrate (S1) is taken out of to heating chamber;
By above film, on substrate, form described the first film, than the first film and thick described the second film of tertiary membrane, with the tertiary membrane of the first film same thickness.
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