CN103839892A - 一种半导体结构及其制造方法 - Google Patents
一种半导体结构及其制造方法 Download PDFInfo
- Publication number
- CN103839892A CN103839892A CN201210488790.3A CN201210488790A CN103839892A CN 103839892 A CN103839892 A CN 103839892A CN 201210488790 A CN201210488790 A CN 201210488790A CN 103839892 A CN103839892 A CN 103839892A
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- Prior art keywords
- floating boom
- semiconductor structure
- substrate
- insulating barrier
- floating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210488790.3A CN103839892B (zh) | 2012-11-26 | 2012-11-26 | 一种半导体结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210488790.3A CN103839892B (zh) | 2012-11-26 | 2012-11-26 | 一种半导体结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103839892A true CN103839892A (zh) | 2014-06-04 |
CN103839892B CN103839892B (zh) | 2016-08-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201210488790.3A Expired - Fee Related CN103839892B (zh) | 2012-11-26 | 2012-11-26 | 一种半导体结构及其制造方法 |
Country Status (1)
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CN (1) | CN103839892B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106972020A (zh) * | 2016-01-12 | 2017-07-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW525298B (en) * | 2001-11-05 | 2003-03-21 | Silicon Based Tech Corp | Manufacturing method of stacked-gate flash memory array |
US20050023599A1 (en) * | 2003-07-31 | 2005-02-03 | Song Jung Gyun | Methods for fabricating flash memory devices |
CN1870249A (zh) * | 2005-02-18 | 2006-11-29 | 英飞凌科技股份公司 | 电荷捕获存储器件及其制造方法 |
CN1988160A (zh) * | 2005-12-20 | 2007-06-27 | 三星电子株式会社 | 与非型多位非易失性存储器件及其制造方法 |
-
2012
- 2012-11-26 CN CN201210488790.3A patent/CN103839892B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW525298B (en) * | 2001-11-05 | 2003-03-21 | Silicon Based Tech Corp | Manufacturing method of stacked-gate flash memory array |
US20050023599A1 (en) * | 2003-07-31 | 2005-02-03 | Song Jung Gyun | Methods for fabricating flash memory devices |
CN1870249A (zh) * | 2005-02-18 | 2006-11-29 | 英飞凌科技股份公司 | 电荷捕获存储器件及其制造方法 |
CN1988160A (zh) * | 2005-12-20 | 2007-06-27 | 三星电子株式会社 | 与非型多位非易失性存储器件及其制造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106972020A (zh) * | 2016-01-12 | 2017-07-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
CN106972020B (zh) * | 2016-01-12 | 2020-11-27 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
Also Published As
Publication number | Publication date |
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CN103839892B (zh) | 2016-08-10 |
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Denomination of invention: Semiconductor structure and its making method Effective date of registration: 20190320 Granted publication date: 20160810 Pledgee: China Postal Savings Bank Co., Ltd. Zhuhai Branch Pledgor: Li Di|Zhuhai Boya Technology Co., Ltd. Registration number: 2019990000243 |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160810 Termination date: 20191126 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20210609 Granted publication date: 20160810 Pledgee: China Postal Savings Bank Co.,Ltd. Zhuhai Branch Pledgor: Li Di Registration number: 2019990000243 |