CN103814282A - 硅化物间隙薄膜晶体管 - Google Patents

硅化物间隙薄膜晶体管 Download PDF

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Publication number
CN103814282A
CN103814282A CN201280045503.XA CN201280045503A CN103814282A CN 103814282 A CN103814282 A CN 103814282A CN 201280045503 A CN201280045503 A CN 201280045503A CN 103814282 A CN103814282 A CN 103814282A
Authority
CN
China
Prior art keywords
layer
silicon
silicon area
dielectric layer
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280045503.XA
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English (en)
Chinese (zh)
Inventor
约翰·贤哲·洪
琼·厄克·李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm MEMS Technologies Inc
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Qualcomm MEMS Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm MEMS Technologies Inc filed Critical Qualcomm MEMS Technologies Inc
Publication of CN103814282A publication Critical patent/CN103814282A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Micromachines (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
CN201280045503.XA 2011-08-24 2012-08-14 硅化物间隙薄膜晶体管 Pending CN103814282A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/217,177 US20130050166A1 (en) 2011-08-24 2011-08-24 Silicide gap thin film transistor
US13/217,177 2011-08-24
PCT/US2012/050812 WO2013028412A1 (en) 2011-08-24 2012-08-14 Silicide gap thin film transistor

Publications (1)

Publication Number Publication Date
CN103814282A true CN103814282A (zh) 2014-05-21

Family

ID=46832602

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280045503.XA Pending CN103814282A (zh) 2011-08-24 2012-08-14 硅化物间隙薄膜晶体管

Country Status (8)

Country Link
US (1) US20130050166A1 (enExample)
EP (1) EP2748574A1 (enExample)
JP (1) JP2014531744A (enExample)
KR (1) KR20140052059A (enExample)
CN (1) CN103814282A (enExample)
IN (1) IN2014CN01099A (enExample)
TW (1) TW201314773A (enExample)
WO (1) WO2013028412A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107195636A (zh) * 2017-05-12 2017-09-22 惠科股份有限公司 显示面板、显示面板的制程和显示装置
CN107421681A (zh) * 2017-07-31 2017-12-01 京东方科技集团股份有限公司 一种压力传感器及其制作方法
CN111510105A (zh) * 2019-05-03 2020-08-07 美三科技有限公司 类压电d33振动式装置及整合其的显示器

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130102983A1 (en) * 2011-10-12 2013-04-25 Karen Wynne Gilmartin Systems and methods for a fluid-absorbing member
US9024925B2 (en) * 2013-03-13 2015-05-05 Qualcomm Mems Technologies, Inc. Color performance of IMODs
US9416003B2 (en) * 2014-02-24 2016-08-16 Freescale Semiconductor, Inc. Semiconductor die with high pressure cavity
US10032635B2 (en) * 2015-02-05 2018-07-24 The Trustees Of The University Of Pennsylvania Thin film metal silicides and methods for formation
DE102018115326B3 (de) * 2018-06-26 2020-01-02 Infineon Technologies Dresden GmbH & Co. KG Halbleiteranordnung und verfahren zu deren herstellung
US11545612B2 (en) * 2019-05-03 2023-01-03 May Sun Technology Co., Ltd. Pseudo-piezoelectric D33 device and electronic device using the same

Citations (5)

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Publication number Priority date Publication date Assignee Title
CN1185022A (zh) * 1996-12-10 1998-06-17 联华电子股份有限公司 改善自动对准硅化物性质的制造方法
CN1732559A (zh) * 2002-12-24 2006-02-08 皇家飞利浦电子股份有限公司 薄膜晶体管,用于制造薄膜晶体管的方法和具有该晶体管的电子设备
WO2006069855A1 (de) * 2004-12-28 2006-07-06 Siemens Aktiengesellschaft Anordnung eines elektrischen bauelements und einer zwei-phasen-kühlvorrichtung
CN1967793A (zh) * 2005-11-18 2007-05-23 国际商业机器公司 场效应晶体管及其制造方法
JP2010014798A (ja) * 2008-07-01 2010-01-21 Nsk Ltd マイクロミラーデバイス及び光照射装置

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JPH09321052A (ja) * 1996-05-30 1997-12-12 Fujitsu Ltd 半導体装置及びその製造方法
US7920135B2 (en) * 2004-09-27 2011-04-05 Qualcomm Mems Technologies, Inc. Method and system for driving a bi-stable display
JP5348916B2 (ja) * 2007-04-25 2013-11-20 株式会社半導体エネルギー研究所 半導体装置
WO2009128084A1 (en) * 2008-04-15 2009-10-22 Indian Institute Of Science A sub-threshold elastic deflection fet sensor for sensing pressure/force, a method and system thereof
JP2011181596A (ja) * 2010-02-26 2011-09-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
WO2012095117A1 (de) * 2011-01-12 2012-07-19 Technische Universität Dortmund Mikromechanischer drucksensor und verfahren zu dessen herstellung

Patent Citations (5)

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CN1185022A (zh) * 1996-12-10 1998-06-17 联华电子股份有限公司 改善自动对准硅化物性质的制造方法
CN1732559A (zh) * 2002-12-24 2006-02-08 皇家飞利浦电子股份有限公司 薄膜晶体管,用于制造薄膜晶体管的方法和具有该晶体管的电子设备
WO2006069855A1 (de) * 2004-12-28 2006-07-06 Siemens Aktiengesellschaft Anordnung eines elektrischen bauelements und einer zwei-phasen-kühlvorrichtung
CN1967793A (zh) * 2005-11-18 2007-05-23 国际商业机器公司 场效应晶体管及其制造方法
JP2010014798A (ja) * 2008-07-01 2010-01-21 Nsk Ltd マイクロミラーデバイス及び光照射装置

Non-Patent Citations (2)

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Title
CHEON-HONG KIM ET AL.: "A Poly-Si TFT Fabricated by Excimer Laser Recrystallization on Floating Active Structure", 《IEEE ELECTRON DEVICE LETTERS》, vol. 23, no. 6, 30 June 2002 (2002-06-30), pages 315 - 317, XP011424591, DOI: doi:10.1109/LED.2002.1004220 *
杜元成等: "用冷阴极电子束快速处理金属-硅薄膜生成硅化物", 《半导体学报》, vol. 6, no. 02, 8 February 1985 (1985-02-08), pages 159 - 165 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107195636A (zh) * 2017-05-12 2017-09-22 惠科股份有限公司 显示面板、显示面板的制程和显示装置
CN107421681A (zh) * 2017-07-31 2017-12-01 京东方科技集团股份有限公司 一种压力传感器及其制作方法
CN107421681B (zh) * 2017-07-31 2019-10-01 京东方科技集团股份有限公司 一种压力传感器及其制作方法
CN111510105A (zh) * 2019-05-03 2020-08-07 美三科技有限公司 类压电d33振动式装置及整合其的显示器
CN111510105B (zh) * 2019-05-03 2025-03-28 美三科技有限公司 类压电d33振动式装置及整合其的显示器

Also Published As

Publication number Publication date
JP2014531744A (ja) 2014-11-27
WO2013028412A1 (en) 2013-02-28
TW201314773A (zh) 2013-04-01
KR20140052059A (ko) 2014-05-02
IN2014CN01099A (enExample) 2015-04-10
EP2748574A1 (en) 2014-07-02
US20130050166A1 (en) 2013-02-28

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Application publication date: 20140521