TW201314773A - 矽化物間隙薄膜電晶體 - Google Patents

矽化物間隙薄膜電晶體 Download PDF

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Publication number
TW201314773A
TW201314773A TW101130703A TW101130703A TW201314773A TW 201314773 A TW201314773 A TW 201314773A TW 101130703 A TW101130703 A TW 101130703A TW 101130703 A TW101130703 A TW 101130703A TW 201314773 A TW201314773 A TW 201314773A
Authority
TW
Taiwan
Prior art keywords
layer
germanium
region
dielectric layer
substrate
Prior art date
Application number
TW101130703A
Other languages
English (en)
Chinese (zh)
Inventor
約翰 元丘 洪
瓊 厄克 李
Original Assignee
高通微機電系統科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 高通微機電系統科技公司 filed Critical 高通微機電系統科技公司
Publication of TW201314773A publication Critical patent/TW201314773A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Micromachines (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW101130703A 2011-08-24 2012-08-23 矽化物間隙薄膜電晶體 TW201314773A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/217,177 US20130050166A1 (en) 2011-08-24 2011-08-24 Silicide gap thin film transistor

Publications (1)

Publication Number Publication Date
TW201314773A true TW201314773A (zh) 2013-04-01

Family

ID=46832602

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101130703A TW201314773A (zh) 2011-08-24 2012-08-23 矽化物間隙薄膜電晶體

Country Status (8)

Country Link
US (1) US20130050166A1 (enExample)
EP (1) EP2748574A1 (enExample)
JP (1) JP2014531744A (enExample)
KR (1) KR20140052059A (enExample)
CN (1) CN103814282A (enExample)
IN (1) IN2014CN01099A (enExample)
TW (1) TW201314773A (enExample)
WO (1) WO2013028412A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130102983A1 (en) * 2011-10-12 2013-04-25 Karen Wynne Gilmartin Systems and methods for a fluid-absorbing member
US9024925B2 (en) * 2013-03-13 2015-05-05 Qualcomm Mems Technologies, Inc. Color performance of IMODs
US9416003B2 (en) * 2014-02-24 2016-08-16 Freescale Semiconductor, Inc. Semiconductor die with high pressure cavity
US10032635B2 (en) 2015-02-05 2018-07-24 The Trustees Of The University Of Pennsylvania Thin film metal silicides and methods for formation
CN107195636B (zh) * 2017-05-12 2020-08-18 惠科股份有限公司 显示面板、显示面板的制程和显示装置
CN107421681B (zh) * 2017-07-31 2019-10-01 京东方科技集团股份有限公司 一种压力传感器及其制作方法
DE102018115326B3 (de) 2018-06-26 2020-01-02 Infineon Technologies Dresden GmbH & Co. KG Halbleiteranordnung und verfahren zu deren herstellung
KR102472120B1 (ko) 2019-05-03 2022-11-28 메이 선 테크놀로지 씨오 엘티디 의사-압전 d33 진동 장치 및 이를 통합하는 디스플레이
US11545612B2 (en) * 2019-05-03 2023-01-03 May Sun Technology Co., Ltd. Pseudo-piezoelectric D33 device and electronic device using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321052A (ja) * 1996-05-30 1997-12-12 Fujitsu Ltd 半導体装置及びその製造方法
CN1055785C (zh) * 1996-12-10 2000-08-23 联华电子股份有限公司 自动对准硅化物的制造方法
GB0230140D0 (en) * 2002-12-24 2003-01-29 Koninkl Philips Electronics Nv Thin film transistor method for producing a thin film transistor and electronic device having such a transistor
US7920135B2 (en) * 2004-09-27 2011-04-05 Qualcomm Mems Technologies, Inc. Method and system for driving a bi-stable display
DE102004063039B4 (de) * 2004-12-28 2011-09-22 Siemens Ag Anordnung mit einem elektrischen Leistungshalbleiterbauelement und einer Zwei-Phasen-Kühlvorrichtung
US7659172B2 (en) * 2005-11-18 2010-02-09 International Business Machines Corporation Structure and method for reducing miller capacitance in field effect transistors
JP5348916B2 (ja) * 2007-04-25 2013-11-20 株式会社半導体エネルギー研究所 半導体装置
WO2009128084A1 (en) * 2008-04-15 2009-10-22 Indian Institute Of Science A sub-threshold elastic deflection fet sensor for sensing pressure/force, a method and system thereof
JP2010014798A (ja) * 2008-07-01 2010-01-21 Nsk Ltd マイクロミラーデバイス及び光照射装置
JP2011181596A (ja) * 2010-02-26 2011-09-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
EP2663849A1 (de) * 2011-01-12 2013-11-20 Technische Universität Dortmund Mikromechanischer drucksensor und verfahren zu dessen herstellung

Also Published As

Publication number Publication date
KR20140052059A (ko) 2014-05-02
WO2013028412A1 (en) 2013-02-28
JP2014531744A (ja) 2014-11-27
CN103814282A (zh) 2014-05-21
IN2014CN01099A (enExample) 2015-04-10
EP2748574A1 (en) 2014-07-02
US20130050166A1 (en) 2013-02-28

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